Статті в журналах: "Interface physics"

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Du, Wanyi, Yuanyuan Huang, Yixuan Zhou, and Xinlong Xu. "Terahertz interface physics: from terahertz wave propagation to terahertz wave generation." Journal of Physics D: Applied Physics 55, no. 22 (February 4, 2022): 223002. http://dx.doi.org/10.1088/1361-6463/ac3f58.

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Abstract Terahertz (THz) interface physics as a new interdiscipline between the THz technique and condensed matter physics has undergone rapid development in recent years. In particular, the development of advanced materials, such as graphene, transitional metal dichalcogenides, topological insulators, ferromagnetic metals, and metamaterials, has revolutionized the interface field and further promoted the development of THz functional devices based on interface physics. Moreover, playing at the interface of these advanced materials could unveil a wealth of fascinating physical effects such as charge transfer, proximity effect, inverse spin-Hall effect, and Rashba effect with THz technology by engineering the charge, spin, orbit, valley, and lattice degrees of freedom. In this review, we start with a discussion of the basic theory of THz interface physics, including interface formation with advanced materials, THz wave reflection and transmission at the interface, and band alignment and charge dynamics at the interface. Then we move to recent progress in advanced materials from THz wave propagation to THz wave generation at the interface. In THz wave propagation, we focus on THz wave impedance-matching, Goos–Hänchen and Imbert–Fedorov shifts in THz region, interfacial modulation and interfacial sensing based on THz waves. In THz wave generation, we summarize ongoing coherent THz wave generation from van der Waals interfaces, multiferroic interfaces, and magnetic interfaces. The fascinating THz interface physics of advanced materials is promising and promotes novel THz functional devices for manipulating propagation and generation of THz waves at interfaces.

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2

Nandan, Shambhavi, Christophe Fochesato, Mathieu Peybernes, Renaud Motte, and Florian De Vuyst. "Sharp Interface Capturing in Compressible Multi-Material Flows with a Diffuse Interface Method." Applied Sciences 11, no. 24 (December 19, 2021): 12107. http://dx.doi.org/10.3390/app112412107.

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Compressible multi-materialflows are encountered in a wide range of natural phenomena and industrial applications, such as supernova explosions in space, high speed flows in jet and rocket propulsion, underwater explosions, and vapor explosions in post accidental situations in nuclear reactors. In the numerical simulations of these flows, interfaces play a crucial role. A poor numerical resolution of the interfaces could make it difficult to account for the physics, such as material separation, location of the shocks and contact discontinuities, and transfer of the mass, momentum and heat between different materials/phases. Owing to such importance, sharp interface capturing remains an active area of research in the field of computational physics. To address this problem in this paper we focus on the Interface Capturing (IC) strategy, and thus we make use of a newly developed Diffuse Interface Method (DIM) called Multidimensional Limiting Process-Upper Bound (MLP-UB). Our analysis shows that this method is easy to implement, can deal with any number of material interfaces, and produces sharp, shape-preserving interfaces, along with their accurate interaction with the shocks. Numerical experiments show good results even with the use of coarse meshes.

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Sjögreen, Björn, and Jeffrey W. Banks. "Stability of Finite Difference Discretizations of Multi-Physics Interface Conditions." Communications in Computational Physics 13, no. 2 (February 2013): 386–410. http://dx.doi.org/10.4208/cicp.280711.070212a.

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AbstractWe consider multi-physics computations where the Navier-Stokes equations of compressible fluid flow on some parts of the computational domain are coupled to the equations of elasticity on other parts of the computational domain. The different subdomains are separated by well-defined interfaces. We consider time accurate computations resolving all time scales. For such computations, explicit time stepping is very efficient. We address the issue of discrete interface conditions between the two domains of different physics that do not lead to instability, or to a significant reduction of the stable time step size. Finding such interface conditions is non-trivial.We discretize the problem with high order centered difference approximations with summation by parts boundary closure. We derive L2 stable interface conditions for the linearized one dimensional discretized problem. Furthermore, we generalize the interface conditions to the full non-linear equations and numerically demonstrate their stable and accurate performance on a simple model problem. The energy stable interface conditions derived here through symmetrization of the equations contain the interface conditions derived through normal mode analysis by Banks and Sjögreen in [8] as a special case.

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4

Hwang, H. Y. "APPLIED PHYSICS: Tuning Interface States." Science 313, no. 5795 (September 29, 2006): 1895–96. http://dx.doi.org/10.1126/science.1133138.

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5

Wallace, G. G., S. E. Moulton, and G. M. Clark. "APPLIED PHYSICS: Electrode-Cellular Interface." Science 324, no. 5924 (April 10, 2009): 185–86. http://dx.doi.org/10.1126/science.1168346.

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Sochacki, J. S., J. H. George, R. E. Ewing, and S. B. Smithson. "Interface conditions for acoustic and elastic wave propagation." GEOPHYSICS 56, no. 2 (February 1991): 168–81. http://dx.doi.org/10.1190/1.1443029.

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The divergence theorem is used to handle the physics required at interfaces for acoustic and elastic wave propagation in heterogeneous media. The physics required at regular and irregular interfaces is incorporated into numerical schemes by integrating across the interface. The technique, which can be used with many numerical schemes, is applied to finite differences. A derivation of the acoustic wave equation, which is readily handled by this integration scheme, is outlined. Since this form of the equation is equivalent to the scalar SH wave equation, the scheme can be applied to this equation also. Each component of the elastic P‐SV equation is presented in divergence form to apply this integration scheme, naturally incorporating the continuity of the normal and tangential stresses required at regular and irregular interfaces.

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7

Lee, C. S., J. X. Tang, Y. C. Zhou, and S. T. Lee. "Interface dipole at metal-organic interfaces: Contribution of metal induced interface states." Applied Physics Letters 94, no. 11 (March 16, 2009): 113304. http://dx.doi.org/10.1063/1.3099836.

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8

Nakayama, T., S. Sasaki, and Y. Asayama. "Physics of Metal/Ge Interfaces; Interface Defects and Fermi-Level Depinning." ECS Transactions 75, no. 8 (September 23, 2016): 643–50. http://dx.doi.org/10.1149/07508.0643ecst.

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9

Hoekstra, Alfons G., Saad Alowayyed, Eric Lorenz, Natalia Melnikova, Lampros Mountrakis, Britt van Rooij, Andrew Svitenkov, Gábor Závodszky, and Pavel Zun. "Towards the virtual artery: a multiscale model for vascular physiology at the physics–chemistry–biology interface." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 374, no. 2080 (November 13, 2016): 20160146. http://dx.doi.org/10.1098/rsta.2016.0146.

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This discussion paper introduces the concept of the Virtual Artery as a multiscale model for arterial physiology and pathologies at the physics–chemistry–biology (PCB) interface. The cellular level is identified as the mesoscopic level, and we argue that by coupling cell-based models with other relevant models on the macro- and microscale, a versatile model of arterial health and disease can be composed. We review the necessary ingredients, both models of arteries at many different scales, as well as generic methods to compose multiscale models. Next, we discuss how this can be combined into the virtual artery. Finally, we argue that the concept of models at the PCB interface could or perhaps should become a powerful paradigm, not only as in our case for studying physiology, but also for many other systems that have such PCB interfaces. This article is part of the themed issue ‘Multiscale modelling at the physics–chemistry–biology interface’.

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10

Ren, Shang-Fen, and Jason Stanfield. "Interface Phonon Modes in Strained Semiconductor Superlattices." International Journal of Modern Physics B 12, no. 29n31 (December 20, 1998): 3137–40. http://dx.doi.org/10.1142/s0217979298002222.

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Phonon modes in strained ZnTe/CdSe superlattices are studied. The macroscopic interface modes and two different types of microscopic interface modes are identified. Interface phonon modes in (ZnTe)8(CdSe)8 superlattice with interchange of atomic layers across interfaces are calculated and compared with the results of superlattice with ideal interfaces.

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11

MUKHERJEE, SWARNAVA, SHANMUKH SARODE, CHINMAYEE MUJUMDAR, LIZHI SHANG, and ANDREA VACCA. "EFFECT OF DYNAMIC COUPLING ON THE PERFORMANCE OF PISTON PUMP LUBRICATING INTERFACES." MM Science Journal 2022, no. 3 (September 27, 2022): 5783–90. http://dx.doi.org/10.17973/mmsj.2022_10_2022075.

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The energy efficiency and durability performance of axial piston machines are strongly affected by the tribological behavior of their lubricating interfaces. State-of-the-art approaches typically study these interface in isolation, neglecting possible reciprocal interactions between such interfaces. This paper presents an investigation of the mutual interaction between the piston/cylinder interface and the slipper/swashplate interface of a commercial axial piston pump. The proposed model can predict distributive fluid behavior in the lubricating gaps considering the effects of dynamics of the solid bodies, compressibility, mixed lubrication, elastic deformation, and cavitation. The dynamic coupling between the piston and the slipper is achieved by modeling the friction between the piston ball and slipper socket based on the force balance and the relative motion between the two bodies. The efficiencies predicted by this coupled model are compared to the ones obtained through the more established approach of solving the lubricating interfaces independently. The simulation results demonstrate the influence of the coupled physics on the lubricating interface performance, confirming the necessity of considering couple dynamics in lubricating interface numerical modeling.

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12

Šatura, Lukáš, Mária Minichová, Michal Pavelka, Juraj Kosek, and Alexandr Zubov. "A Robust Physics-Based Calculation of Evolving Gas–Liquid Interfaces." Journal of Non-Equilibrium Thermodynamics 47, no. 2 (February 4, 2022): 143–54. http://dx.doi.org/10.1515/jnet-2021-0080.

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Abstract Density gradient theory describes the evolution of diffuse interfaces in both mixtures and pure substances by minimization of the total free energy, which consists of a non-convex bulk part and an interfacial part. Minimization of the bulk free energy causes phase separation while building up the interfacial free energy (proportional to the square of gradients of the species’ densities) and it results in the equilibrium shape of the interface. However, direct minimization of the free energy is numerically unstable and the coefficients in the interfacial part of the free energy are often estimated from experimental data (not determined from the underlying physics). In this paper we develop a robust physics-based numerical approach that leads to the interface density profiles for both pure substances and mixtures. The model is free of fitting parameters and validated by available experimental data.

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13

Appolaire, Benoît, Elisabeth Aeby-Gautier, Julien Da Costa Teixeira, Moukrane Dehmas, and Sabine Denis. "Non-coherent interfaces in diffuse interface models." Philosophical Magazine 90, no. 1-4 (January 7, 2010): 461–83. http://dx.doi.org/10.1080/14786430903334324.

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14

Polachan, Kurian, Baibhab Chatterjee, Scott Weigand, and Shreyas Sen. "Human Body–Electrode Interfaces for Wide-Frequency Sensing and Communication: A Review." Nanomaterials 11, no. 8 (August 23, 2021): 2152. http://dx.doi.org/10.3390/nano11082152.

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Several on-body sensing and communication applications use electrodes in contact with the human body. Body–electrode interfaces in these cases act as a transducer, converting ionic current in the body to electronic current in the sensing and communication circuits and vice versa. An ideal body–electrode interface should have the characteristics of an electrical short, i.e., the transfer of ionic currents and electronic currents across the interface should happen without any hindrance. However, practical body–electrode interfaces often have definite impedances and potentials that hinder the free flow of currents, affecting the application’s performance. Minimizing the impact of body–electrode interfaces on the application’s performance requires one to understand the physics of such interfaces, how it distorts the signals passing through it, and how the interface-induced signal degradations affect the applications. Our work deals with reviewing these elements in the context of biopotential sensing and human body communication.

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15

Modestov, Mikhail. "Stability Analysis for an Interface with a Continuous Internal Structure." Fluids 6, no. 1 (January 1, 2021): 18. http://dx.doi.org/10.3390/fluids6010018.

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A general method for solving a linear stability problem of an interface with a continuous internal structure is described. Such interfaces or fronts are commonly found in various branches of physics, such as combustion and plasma physics. It extends simplified analysis of an infinitely thin discontinuous front by means of numerical integration along the steady-state solution. Two examples are presented to demonstrate the application of the method for 1D pulsating instability in magnetic deflagration and 2D Darrieus–Landau instability in a laser ablation wave.

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16

Li, Botong, Chein-Shan Liu, and Liangliang Zhu. "A General Algorithm on the Natural Vibration Analysis of Composite Beams with Arbitrary Complex Interfaces." Zeitschrift für Naturforschung A 73, no. 11 (October 25, 2018): 995–1004. http://dx.doi.org/10.1515/zna-2018-0266.

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AbstractIn the present work, a novel mathematical scheme is developed to investigate the transverse natural vibration of composite materials with complex interfaces, which belong to the extreme mechanical category. Two kinds of interfaces, as examples, are used to demonstrate the mathematical scheme. One is the triangular wave interface that has non-differentiable points in its interface description function, and the other is the square wave interface that has discontinuity points in its interface description function. The non-differentiable points or the discontinuity points in the description interface functions can pose great challenge for traditional mathematical/mechanical treatments dealing with the vibration problem. Governing equations of the composites are derived according to the generalized Hamiltonian principle. For the piecewise interface function of the triangular/square wave interface, as it is not a continuous and derivative function, the Fourier expansion method with finite terms is adopted to approximate the piecewise function in the calculations. The proposed iterative scheme can quickly find the natural frequencies of the composites, with the help of the Rayleigh quotient and boundary functions. The obtained natural frequencies are compared with those obtained from the finite element method. The effects of interface geometrical properties (the amplitude and the number of waves of the interface) on the natural frequencies are investigated systematically, and we show a plausible way to tune the natural frequencies of the composites by changing the interface geometries.

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17

Atiyah, Michael, Michael Berry, Luke Drury, Arthur Jaffe, and Brendan Goldsmith. "The Interface between Mathematics and Physics." Irish Mathematical Society Bulletin 0058 (2006): 33–54. http://dx.doi.org/10.33232/bims.0058.33.54.

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18

Helander, Per. "Physics at the stellarator--tokamak interface." Plasma Physics and Controlled Fusion 53, no. 2 (January 20, 2011): 020201. http://dx.doi.org/10.1088/0741-3335/53/2/020201.

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19

Zubko, Pavlo, Stefano Gariglio, Marc Gabay, Philippe Ghosez, and Jean-Marc Triscone. "Interface Physics in Complex Oxide Heterostructures." Annual Review of Condensed Matter Physics 2, no. 1 (March 2011): 141–65. http://dx.doi.org/10.1146/annurev-conmatphys-062910-140445.

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20

Wan, Li-Kai, Yi-Xuan Xue, Jin-Wu Jiang, and Harold S. Park. "Machine learning accelerated search of the strongest graphene/h-BN interface with designed fracture properties." Journal of Applied Physics 133, no. 2 (January 14, 2023): 024302. http://dx.doi.org/10.1063/5.0131576.

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Two-dimensional lateral heterostructures exhibit novel electronic and optical properties that are induced by their in-plane interface for which the mechanical properties of the interface are important for the stability of the lateral heterostructure. Therefore, we performed molecular dynamics simulations and developed a convolutional neural network-based machine learning model to study the fracture properties of the interface in a graphene/hexagonal boron nitride lateral heterostructure. The molecular dynamics (MD) simulations show that the shape of the interface can cause an 80% difference in the fracture stress and the fracture strain for the interface. By using 11 500 training samples obtained with help of high-cost MD simulation, the machine learning model is able to search out the strongest interfaces with the largest fracture strain and fracture stress in a large sample space with over 150 000 structures. By analyzing the atomic configuration of these strongest interfaces, we disclose two major factors dominating the interface strength, including the interface roughness and the strength of the chemical bond across the interface. We also explore the correlation between the fracture properties and the thermal conductivity for these lateral heterostructures by examining the bond type and the shape of the graphene/hexagonal boron nitride interface. We find that interfaces comprised of stronger bonds and smoother zigzag interfaces can relieve the abrupt change of the acoustic velocity, leading to the enhancement of the interface thermal conductivity. These findings will be valuable for the application of the two-dimensional lateral heterostructure in electronic devices.

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21

Hattori, K., and Y. Torii. "Interface States in SiInxPyOz–InSb Interfaces." Physica Status Solidi (a) 125, no. 1 (May 16, 1991): 245–53. http://dx.doi.org/10.1002/pssa.2211250120.

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22

Nakanuma, Takato, Yu Iwakata, Arisa Watanabe, Takuji Hosoi, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, and Heiji Watanabe. "Comprehensive physical and electrical characterizations of NO nitrided SiO₂/4H-SiC(112̄0) interfaces." Japanese Journal of Applied Physics 61, SC (March 2, 2022): SC1065. http://dx.doi.org/10.35848/1347-4065/ac4685.

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Abstract Nitridation of SiO2/4H-SiC(112̄0) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning X-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO2/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance–voltage (C–V) measurements in the dark and under illumination with ultraviolet light to evaluate the interface defects near the conduction and valence band edges and those causing hysteresis and shifting of the C–V curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

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23

Sacilotti, M., P. Abraham, M. Pitaval, M. Ambri, T. Benyattou, A. Tabata, M. A. Garcia Perez, et al. "Structural and optical properties of AlInAs/InP and GaPSb/InP type II interfaces." Canadian Journal of Physics 74, no. 5-6 (May 1, 1996): 202–8. http://dx.doi.org/10.1139/p96-032.

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We present a study of type II interfaces between semiconducting materials. In this type of interface the lineup of the two semiconductor band gaps has a staggered shape. The band bending at the interface depends on the doping type and concentration of the two semiconductors involved. In most cases two triangular quantum wells appear at the interface, one for the electrons in the semiconductor having the lowest conduction band edge and one in the other material for holes. In such a case, when charges are injected, the electrons and holes are separated at the interface, so that the electron/hole recombination occurs through the interface. The main characteristic of type II interfaces is that their photoluminescent (PL) intensity is very high compared with each material forming the heterojunction. This high PL intensity can be used advantageously in optoelectronic device applications. We present semiconductor pairs for which it is possible to have type II interfaces and their optical properties. We will emphasize particularly the cases of AlInAs/InP and GaPSb/InP whose low-temperature interface recombination energies are 1.2 and 0.90 eV, respectively.

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24

Koruk, H. "Development of an improved mathematical model for the dynamic response of a sphere located at a viscoelastic medium interface." European Journal of Physics 43, no. 2 (January 11, 2022): 025002. http://dx.doi.org/10.1088/1361-6404/ac4647.

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Abstract A comprehensive investigation on the static and dynamic responses of a sphere located at elastic and viscoelastic medium interfaces is performed in this study. First, the mathematical models commonly used for predicting the static displacement of a sphere located at an elastic medium interface are presented and their performances are compared. After that, based on the finite element analyses, an accurate mathematical model to predict the static displacement of a sphere located at an elastic medium interface valid for different Poisson’s ratios of the medium and small and large sphere displacements is proposed. Then, an improved mathematical model for the dynamic response of a sphere located at a viscoelastic medium interface is developed. In addition to the Young’s modulus of the medium and the radius of the sphere, the model takes into account the density, Poisson’s ratio and viscosity of the medium, the mass of the sphere and the radiation damping. The effects of the radiation damping, the Young’s modulus, density and viscosity of the medium and the density of the sphere on the dynamic response of the sphere located at a viscoelastic medium interface are explored. The developed model can be used to understand the dynamic responses of spherical objects located at viscoelastic medium interfaces in practical applications. Furthermore, the proposed model is a significant tool for graduate students and researchers in the fields of engineering, materials science and physics to gain insight into the dynamic responses of spheres located at viscoelastic medium interfaces.

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25

Otani, Ryuken, Shin Kiyohara, Kiyou Shibata, and Teruyasu Mizoguchi. "Prediction of interface and vacancy segregation energies at silver interfaces without determining interface structures." Applied Physics Express 13, no. 6 (May 13, 2020): 065504. http://dx.doi.org/10.35848/1882-0786/ab8b6c.

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26

HO, PAUL S. "MACROSCOPIC PROPERTIES AND SCHOTTKY BARRIER FORMATION AT SILICIDE-SILICON INTERFACES." Modern Physics Letters B 01, no. 03 (June 1987): 119–27. http://dx.doi.org/10.1142/s021798498700017x.

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This paper reviews the current understanding of the microscopic properties of silicide-silicon interfaces pertaining to the formation of Schottky barrier. Significant progress has been accomplished, including the preparation of single-crystal silicide interfaces and the observation of interface states. Some important issues remain unresolved, such as the disagreement on the epitaxial nickel silicide barriers and the origin of interface states.

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27

de Souza, J. Pedro, Alexei A. Kornyshev, and Martin Z. Bazant. "Polar liquids at charged interfaces: A dipolar shell theory." Journal of Chemical Physics 156, no. 24 (June 28, 2022): 244705. http://dx.doi.org/10.1063/5.0096439.

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The structure of polar liquids and electrolytic solutions, such as water and aqueous electrolytes, at interfaces underlies numerous phenomena in physics, chemistry, biology, and engineering. In this work, we develop a continuum theory that captures the essential features of dielectric screening by polar liquids at charged interfaces, including decaying spatial oscillations in charge and mass, starting from the molecular properties of the solvent. The theory predicts an anisotropic dielectric tensor of interfacial polar liquids previously studied in molecular dynamics simulations. We explore the effect of the interfacial polar liquid properties on the capacitance of the electrode/electrolyte interface and on hydration forces between two plane-parallel polarized surfaces. In the linear response approximation, we obtain simple formulas for the characteristic decay lengths of molecular and ionic profiles at the interface.

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Xie, Rui, Janak Tiwari, and Tianli Feng. "Impacts of various interfacial nanostructures on spectral phonon thermal boundary conductance." Journal of Applied Physics 132, no. 11 (September 21, 2022): 115108. http://dx.doi.org/10.1063/5.0106685.

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Nanoengineering of interfaces has become an effective way to tune the thermal boundary conductance (TBC) of heterostructures. However, the same nanostructure design can have opposite impacts on TBCs for different systems. To provide a clue toward a unified explanation, in this work, we directly and explicitly reveal the impacts of nanostructures on mode-dependent phonon TBC contributions. We study four representative types of nanostructures, i.e., (1) an intermediate layer, (2) interfacial interlaced teeth, (3) interfacial atomic mixing, and (4) interfacial atomic defects on two example heterostructures: 28Si/Ge and 6Si/Ge, which have moderate and large phonon frequency mismatches, respectively. We find that most of these nanostructures reduce the TBC of 28Si/Ge while increasing the TBC of 6Si/Ge. Each nanostructure is found to have two competing impacts on an interface—one tends to increase TBC while the other tends to decrease TBC. For example, adding an intermediate layer provides a phonon bridging effect, which tends to increase both elastic and inelastic phonon transmission, but it adds one more interface and, thus, more phonon reflection. As a result, an interlayer decreases the TBC of the 28Si/Ge interface by decreasing the inelastic transmission while increasing both elastic and inelastic transmissions of the 6Si/Ge interface. Other nanostructures with atomic disorder can increase transmission by increasing the contact area but can also decrease transmission by phonon-disorder backscattering. This work unveils the fundamental thermal transport physics across interfaces with nanostructures and sheds light on future interface nanoengineering for electronic devices such as high-power transistors, photodiodes, and supercomputing architectures.

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Umrani, Shabana. "Games based learning: A case of learning Physics using Angry Birds." Indian Journal of Science and Technology 13, no. 36 (September 26, 2020): 3778–84. http://dx.doi.org/10.17485/ijst/v13i36.853.

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Background/Objectives: Game-Based Learning (GBL) is an emerging term that has attained focus and appreciation at a remarkable level these days, the GBL plays a significant role to learn through games. Angry Birds (AB) is one of the games which are very popular among kids that they mostly spend more than 8 hours of the whole day to play this game. AB’s popularity among the kids is due to its user-friendly easy interface and easy rules. Interface and rules of the game reveal primary physics theories and concepts. This study is conducted to modify the AB interface in such a way that basic physics concepts can be taught to secondary school students using this Game Based Tool (GBT). The objective is to provide GBL tool to teachers and students. That will be helpful for teachers to teach the physics concepts in an interesting way to students.Methods/Statistical analysis: The interface of the AB game is modified in such a way that while students perform various actions to kill the targeted pigs, to hit the objects for scoring, they will be able to learn physics, i.e., projectile motion and some basic concepts of physics involved in achieving the goals. This paper will present the modified interface of AB and how that is used for physics learning. This study is carried to attempt the mentioned objective. The experiment was conducted on 80 students of secondary school,i.e. group 1 played traditional AB game and learned physics in classroom without gaming aid and group 2 learned physics theories in class and used the modified AB game for playing game additionally learned physics from the actions they performed during play. Findings: This study shown that simple and interesting games can be used for learning scientific theories for secondary school students. The study achieved improved results after implementing the lectures using GBL tool to teach physics. 30% of 40 students got 80% of scores in class using GBLT while 25% of 40 students got 80% in class without supplementary GBT. Novelty/Applications: This GBT may be advantageous for teachers and students. Keywords: GameBased learning; angry birds; Physics learning; mobile games

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Roesel, D., M. Eremchev, T. Schönfeldová, S. Lee, and S. Roke. "Water as a contrast agent to quantify surface chemistry and physics using second harmonic scattering and imaging: A perspective." Applied Physics Letters 120, no. 16 (April 18, 2022): 160501. http://dx.doi.org/10.1063/5.0085807.

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Molecular level interactions that take place at the interface of different materials determine their local electrical, chemical, and mechanical properties. In the case of solid interfaces, this information has traditionally been obtained with experimental techniques that require ultra-high vacuum conditions. However, these methods are not suitable for studying surface chemistry of aqueous interfaces. Recently, an approach emerged for probing such interfaces using interfacial water as a contrast agent. This approach is based on second harmonic generation from water molecules next to a charged interface and can be utilized in both scattering and microscopy geometries. In this Perspective, we explain this approach in more detail and provide examples and comparisons for a diverse set of applications: colloid science and solid state physics, illustrated by silica–water surface chemistry, and biophysics, illustrated by membrane–water–ion channel interactions. Those two diverse applications show that by following the structure of interfacial water, it is possible to extract and quantify important chemical parameters such as surface potential values, structure of the electric double layer, and local dissociation constants that are useful in many different contexts.

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31

Spencer, C. D., P. Seligmann, and D. A. Briotta. "General-purpose measurement interface for physics experiments." Computers in Physics 1, no. 1 (1987): 59. http://dx.doi.org/10.1063/1.168294.

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32

Duchamp, Gérard H. E., Hoang Ngoc Minh, Allan I. Solomon, and Silvia Goodenough. "An interface between physics and number theory." Journal of Physics: Conference Series 284 (March 1, 2011): 012023. http://dx.doi.org/10.1088/1742-6596/284/1/012023.

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33

Uckan, N. A., S. Putvinski, J. Wesley, H.-W. Bartels, T. Honda, T. Amano, D. Boucher, N. Fujisawa, D. Post, and M. Rosenbluth. "ITER Physics-Safety Interface: Models and Assessments." Fusion Technology 30, no. 3P2A (December 1996): 551–57. http://dx.doi.org/10.13182/fst96-a11962996.

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34

Yeatts, F. Richard, and Joan R. Hundhausen. "Calculus and physics: Challenges at the interface." American Journal of Physics 60, no. 8 (August 1992): 716–21. http://dx.doi.org/10.1119/1.17077.

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35

FUKANO, Tohru. "Physics of Thermo : Fluid Phenomena at Interface." Transactions of the Japan Society of Mechanical Engineers Series B 68, no. 671 (2002): 1833. http://dx.doi.org/10.1299/kikaib.68.1833.

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36

Adenugba, D. A,, M. T, Babalola, and I. A, Fuwape. "Implementing Vb.Net Interface for Some Physics Models." International Journal of Computer Applications 37, no. 9 (January 28, 2012): 29–36. http://dx.doi.org/10.5120/4638-6690.

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37

CHU, A. KWANG-HUA. "STABILITY OF QUANTUM FLUIDS: WAVY INTERFACE EFFECT." International Journal of Modern Physics B 20, no. 17 (July 10, 2006): 2369–79. http://dx.doi.org/10.1142/s021797920603473x.

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A numerical investigation for the stability of the incompressible slip flow of normal quantum fluids (above the critical phase transition temperature) inside a microslab where surface acoustic waves propagate along the walls is presented. Governing equations and associated slip velocity and wavy interface boundary conditions for the flow of normal fluids confined between elastic wavy interfaces are obtained. The numerical approach is an extension (with a complex matrix pre-conditioning) of the spectral method. We found that the critical Reynolds number ( Re cr or the critical velocity) decreases significantly once the slip velocity and wavy interface effects are present and the latter is dominated ( Re cr mainly depends on the wavy interfaces).

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38

HECHT, I., A. BE'ER, and H. TAITELBAUM. "SINGLE INTERFACE GROWTH: FLUCTUATIONS AND THE CORRELATION LENGTH." Fluctuation and Noise Letters 05, no. 02 (June 2005): L319—L324. http://dx.doi.org/10.1142/s0219477505002719.

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Growth behavior of interfaces is usually described by a power-law of the growth in time of the interface width. This general scaling picture is an average behavior description, which may not be valid when only a finite number of interfaces is considered. In this work we study theoretically and experimentally the growth behavior of single interfaces and show that the growth of the interface width always exhibits a non-monotonic, fluctuating behavior. We study numerically the Quenched-noise Kardar-Parisi-Zhang (QKPZ) equation, using different noise distributions, and show that this behavior results from competing mechanisms of normal growth and surface tension forces in this equation. We define a new measure of the interface width fluctuations and present a way to extract the correlation length of the interface from these fluctuations.

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39

Sharan, Abhishek, Marco Nardone, Dmitry Krasikov, Nirpendra Singh, and Stephan Lany. "Atomically thin interlayer phase from first principles enables defect-free incommensurate SnO₂/CdTe interface." Applied Physics Reviews 9, no. 4 (December 2022): 041411. http://dx.doi.org/10.1063/5.0104008.

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Advancing optoelectronic and emerging technologies increasingly requires control and design of interfaces between dissimilar materials. However, incommensurate interfaces are notoriously defective and rarely benefit from first-principles predictions, because no explicit atomic-structure models exist. Here, we adopt a bulk crystal structure prediction method to the interface geometry and apply it to SnO2/CdTe heterojunctions without and with the addition of CdCl2, a ubiquitous and beneficial, but abstruse processing step in CdTe photovoltaics. Whereas the direct SnO2/CdTe interface is highly defective, we discover a unique two-dimensional CdCl2 interphase, unrelated to the respective bulk structure. It facilitates a seamless transition from the rutile to zincblende lattices and removes defect-states from the interface bandgap. Implementing the predicted interface electronic structure in device simulations, we demonstrate the theoretical feasibility of bufferless oxide-CdTe heterojunction solar cells approaching the Shockley–Queisser limit. Our results highlight the broader potential of designing atomically thin interlayers to enable defect-free incommensurate interfaces.

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40

Carcione, José M., and Hans B. Helle. "The physics and simulation of wave propagation at the ocean bottom." GEOPHYSICS 69, no. 3 (May 2004): 825–39. http://dx.doi.org/10.1190/1.1759469.

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We investigate some aspects of the physics of wave propagation at the ocean bottom (ranging from soft sediments to crustal rocks). Most of the phenomena are associated to the presence of attenuation. The analysis requires the use of an anelastic stress‐strain relation and a highly accurate modeling algorithm. Special attention is given to modeling the boundary conditions at the ocean‐bottom interface and the related physical phenomena. For this purpose, we further develop and test the pseudospectral modeling algorithm for wave propagation at fluid‐anelastic solid interfaces. The method is based on a domain‐decomposition technique (one grid for the fluid part and another grid for the solid part) and the Fourier and Chebyshev differential operators. We consider the reflection, transmission, and propagation of seismic waves at the ocean bottom, modeled as a plane boundary separating an acoustic medium (ocean) and a viscoelastic solid (sediment). The main physical phenomena associated with this interface are illustrated, namely, amplitude variations with offset, the Rayleigh window, and the propagation of Scholte and leaky Rayleigh waves. Modeling anelasticity is essential to describe these effects, in particular, amplitude variations near and beyond the critical angle, the Rayleigh window, and the dissipation of the fundamental interface mode. The physics of wave propagation is investigated by means of a plane‐wave analysis and the novel modeling algorithm. A wavenumber–frequency domain method is used to compute the reflection coefficient and phase angle from the synthetic seismograms. This method serves to verify the algorithm, which is shown to model with high accuracy the Rayleigh‐window phenomenon and the propagation of interface waves. The modeling is further verified by comparisons with the analytical solution for a fluid‐solid interface in lossless media, with source and receivers away from and at the ocean bottom. Using the pseudospectral modeling code, which allows general material variability, a complete and accurate characterization of the seismic response of the ocean bottom can be obtained. An example illustrates the effects of attenuation on the propagation of dispersive Scholte waves at the bottom of the North Sea.

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Weinert, Ulrich, and Ernst Rank. "A Simulation System for Diffusive Oxidation of Silicon:One-Dimensional Analysis." Zeitschrift für Naturforschung A 46, no. 11 (November 1, 1991): 955–66. http://dx.doi.org/10.1515/zna-1991-1106.

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AbstractThermal oxidation of silicon is described as a three-component thermodynamic local process involving silicon, silicon oxide, and oxygen molecules. A simplified system of model equations is used to demonstrate the evoluton of the Si-SiO2 interface. For the one-dimensional case the equivalence with the model of Deal and Grove could be shown analytically. For that purpose effective interface coordinates have been introduced which establish the connection between the conventional concept of sharp interfaces and our "diffusive" interface, i.e., a transition region between pure silicon and pure silicon oxide.

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42

Josell, D., J. E. Bonevich, I. Shao, and R. C. Cammarata. "Measuring the interface stress: Silver/nickel interfaces." Journal of Materials Research 14, no. 11 (November 1999): 4358–65. http://dx.doi.org/10.1557/jmr.1999.0590.

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Interface stress is a surface thermodynamics quantity associated with the reversible work of elastically straining an internal solid interface. In a multilayered thin film, the combined effect of the interface stress of each interface results in an in-plane biaxial volume stress acting within the layers of the film that is inversely proportional to the bilayer thickness. We calculated the interface stress of an interface between {111} textured Ag and Ni on the basis of direct measurements of the dependence of the in-plane elastic strains on the bilayer thickness. The strains were obtained using transmission x-ray diffraction. Unlike previous studies of this type, we used freestanding films so that there was no need to correct for intrinsic stresses resulting from forces applied by the substrate that can lead to large uncertainties of the calculated interface stress value. Based on the lattice parameters of the bulk, pure elements, an interface stress of −2.02 ± 0.26 N/m was calculated using the x-ray diffraction results from films with bilayer thicknesses greater than 5 nm. This value is somewhat smaller than previous measurements obtained from as-deposited films supported by substrates. For smaller bilayer thicknesses the apparent interface stress becomes smaller in magnitude, possibly due to a loss of layering in the specimens.

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43

Chen, Xiaobing, Jine Zhang, Banggui Liu, Fengxia Hu, Baogen Shen, and Jirong Sun. "Two-dimensional conducting states in infinite-layer oxide/perovskite oxide hetero-structures." Journal of Physics: Condensed Matter 34, no. 3 (November 3, 2021): 035003. http://dx.doi.org/10.1088/1361-648x/ac30b6.

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Abstract Heterointerfaces sandwiched by oxides of dissimilar crystal structures will show strong interface reconstruction, leading to distinct interfacial effect arising from unusual physics. Here, we present a theoretical investigation on the interfaces between infinite-layer oxide and perovskite oxide (SrCuO2/SrTiO3 and SrCuO2/KTaO3). Surprisingly, we found well-defined two-dimensional electron gas (2DEG), stemming from atomic reconstruction and polar discontinuity at interface. Moreover, the 2DEG resides in both the TiO2 and CuO2 interfacial layers, unlike LaAlO3/SrTiO3 for which 2DEG exists only in the TiO2 interfacial layer. More than that, no metal-to-insulator transition is observed as the SrCuO2 layer thickness decreases to one unit cell, i.e., the metallicity of the new interface is robust. Further investigations show more unique features of the 2DEG. Due to the absence of apical oxygen at the SrCuO2/SrTiO3 (KTaO3) interface, the conducting states in the interface TiO2 (TaO2) layer follows the d x y < d 3 z 2 − r 2 < d x z / y z orbital order rather than the d xy < d xz/yz orbital order of paradigm LaAlO3/SrTiO3 (KTaO3), exhibiting enhanced interfacial conduction. This work suggests the great potential of heterointerfaces composed of non-isostructural oxides for fundamental research.

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44

Backhaus-Ricoult, Monika. "Characteristic interface point defects at transition metal–oxide interfaces." Phys. Chem. Chem. Phys. 5, no. 11 (2003): 2174–82. http://dx.doi.org/10.1039/b300161j.

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45

HINDMARCH, AIDAN T. "INTERFACE MAGNETISM IN FERROMAGNETIC METAL–COMPOUND SEMICONDUCTOR HYBRID STRUCTURES." SPIN 01, no. 01 (June 2011): 45–69. http://dx.doi.org/10.1142/s2010324711000069.

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Interfaces between dissimilar materials present a wide range of fascinating physical phenomena. When a nanoscale thin-film of a ferromagnetic metal is deposited in intimate contact with a compound semiconductor, the properties of the interface exhibit a wealth of novel behavior, having immense potential for technological application, and being of great interest from the perspective of fundamental physics. This article presents a review of recent advances in the field of interface magnetism in (001)-oriented ferromagnetic metal/III–V compound semiconductor hybrid structures. Until relatively recently, the majority of research in this area continued to concentrate almost exclusively on the prototypical epitaxial Fe / GaAs (001) system: now, a significant proportion of work has branched out from this theme, including ferromagnetic metal alloys, and other III–V compound semiconductors. After a general overview of the topic, and a review of the more recent literature, we discuss recent results where advances have been made in our understanding of the physics underpinning magnetic anisotropy in these systems: tailoring the terms contributing to the angular-dependent free-energy density by employing novel fabrication methods and ferromagnetic metal electrodes.

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46

Dardzinski, Derek, Maituo Yu, Saeed Moayedpour, and Noa Marom. "Best practices for first-principles simulations of epitaxial inorganic interfaces." Journal of Physics: Condensed Matter 34, no. 23 (April 1, 2022): 233002. http://dx.doi.org/10.1088/1361-648x/ac577b.

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Abstract At an interface between two materials physical properties and functionalities may be achieved, which would not exist in either material alone. Epitaxial inorganic interfaces are at the heart of semiconductor, spintronic, and quantum devices. First principles simulations based on density functional theory (DFT) can help elucidate the electronic and magnetic properties of interfaces and relate them to the structure and composition at the atomistic scale. Furthermore, DFT simulations can predict the structure and properties of candidate interfaces and guide experimental efforts in promising directions. However, DFT simulations of interfaces can be technically elaborate and computationally expensive. To help researchers embarking on such simulations, this review covers best practices for first principles simulations of epitaxial inorganic interfaces, including DFT methods, interface model construction, interface structure prediction, and analysis and visualization tools.

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47

IKEGAMI, KOZO. "Fracture Mechanics with Bonding or Contacting Interfaces. I: Physics of Adhesive and Bonding Interface." Journal of the Society of Materials Science, Japan 48, no. 12 (1999): 1450–55. http://dx.doi.org/10.2472/jsms.48.1450.

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48

Son, G., and V. K. Dhir. "Numerical Simulation of Saturated Film Boiling on a Horizontal Surface." Journal of Heat Transfer 119, no. 3 (August 1, 1997): 525–33. http://dx.doi.org/10.1115/1.2824132.

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The past efforts in applying linear Taylor instability theory to the prediction of heat transfer during film boiling on a horizontal surface have suffered from the fact that empirical correlations must be used to define the shape of vapor-liquid interfaces and to determine the transport of mass and heat across these interfaces. The objective of this study is to clarify the physics of film boiling and to predict heat transfer coefficients through complete numerical simulation of the evolving interface between superposed layers of immiscible fluids. A coordinate transformation technique supplemented by a numerical grid generation method and a second-order projection method are combined to solve for the flow and temperature fields associated with an evolving interface. From the numerical simulation, the film thickness and, in turn, the heat transfer coefficient are found to vary both spatially and temporally. Increased wall superheat not only thickens the vapor film in the valley but also enlarges the vapor bulge. The effect of increased system pressure is to slow down the growth of the interface.

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49

Saghayezhian, M., Summayya Kouser, Zhen Wang, Hangwen Guo, Rongying Jin, Jiandi Zhang, Yimei Zhu, Sokrates T. Pantelides, and E. W. Plummer. "Atomic-scale determination of spontaneous magnetic reversal in oxide heterostructures." Proceedings of the National Academy of Sciences 116, no. 21 (May 8, 2019): 10309–16. http://dx.doi.org/10.1073/pnas.1819570116.

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Interfaces between transition metal oxides are known to exhibit emerging electronic and magnetic properties. Here we report intriguing magnetic phenomena for La2/3Sr1/3MnO3 films on an SrTiO3 (001) substrate (LSMO/STO), where the interface governs the macroscopic properties of the entire monolithic thin film. The interface is characterized on the atomic level utilizing scanning transmission electron microscopy and electron energy loss spectroscopy (STEM-EELS), and density functional theory (DFT) is employed to elucidate the physics. STEM-EELS reveals mixed interfacial stoichiometry, subtle lattice distortions, and oxidation-state changes. Magnetic measurements combined with DFT calculations demonstrate that a unique form of antiferromagnetic exchange coupling appears at the interface, generating a novel exchange spring-type interaction that results in a remarkable spontaneous magnetic reversal of the entire ferromagnetic film, and an inverted magnetic hysteresis, persisting above room temperature. Formal oxidation states derived from electron spectroscopy data expose the fact that interfacial oxidation states are not consistent with nominal charge counting. The present work demonstrates the necessity of atomically resolved electron microscopy and spectroscopy for interface studies. Theory demonstrates that interfacial nonstoichiometry is an essential ingredient, responsible for the observed physical properties. The DFT-calculated electrostatic potential is flat in both the LSMO and STO sides (no internal electric field) for both Sr-rich and stoichiometric interfaces, while the DFT-calculated charge density reveals no charge transfer/accumulation at the interface, indicating that oxidation-state changes do not necessarily reflect charge transfer and that the concept of polar mismatch is not applicable in metal−insulator polar−nonpolar interfaces.

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Liu, Ying-Guang, Xin-Qiang Xue, Jin-Wen Zhang, and Guo-Liang Ren. "Thermal conductivity of materials based on interfacial atomic mixing." Acta Physica Sinica 71, no. 9 (2022): 093102. http://dx.doi.org/10.7498/aps.71.20211451.

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The Si/Ge single interface and superlattice structure with atom mixing interfaces are constructed. The effects of interfacial atomic mixing on thermal conductivity of single interface and superlattice structures are studied by non-equilibrium molecular dynamics simulation. The effects of the number of atomic mixing layers, temperature, total length of the system and period length on the thermal conductivity for different lattice structures are studied. The results show that the mixing of two and four layers of atoms can improve the thermal conductivity of Si/Ge lattice with single interface and the few-period superlattice due to the “phonon bridging” mechanism. When the total length of the system is large, the thermal conductivity of the superlattice with atomic mixing interfaces decreases significantly compared with that of the perfect interface. The interfacial atom mixing will destroy the phonon coherent transport in the superlattice and reduce the thermal conductivity to some extent. The superlattce with perfect interface has obvious temperature effect, while the thermal conductivity of the superlattice with atomic mixing is less sensitive to temperature.

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