Увійти

Готові списки джерел за темами / Interface phenomenon / Статті в журналах

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Interface phenomenon.

Статті в журналах з теми "Interface phenomenon"

Автор: Grafiati

Опубліковано: 19 жовтня 2024

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Interface phenomenon".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Agrawal, S. "Bubble dynamics and interface phenomenon." Journal of Engineering and Technology Research 5, no. 3 (2013): 42–50. http://dx.doi.org/10.5897/jetr2013.0297.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Dai, Jinghang, and Zhiting Tian. "Nanoscale thermal interface rectification in the quantum regime." Applied Physics Letters 122, no. 12 (2023): 122204. http://dx.doi.org/10.1063/5.0143038.

Повний текст джерела

Анотація:

To enable the on-demand control of heat flow for sustainable energy solutions, we have been longing for functional thermal components at the nanoscale, in analogue to electronic diodes and transistors. Understanding and discovering fundamental mechanisms that drive thermal rectification are critical to advancing this field. Different mechanisms have been proposed for thermal rectification effects in the classical regime. Using anharmonic atomistic Green's function, we discovered a thermal rectification phenomenon in the quantum regime for nanometer-thick three-dimensional solid interfaces. We

Стилі APA, Harvard, Vancouver, ISO та ін.

3

ROJAS, RENÉ G., RICARDO G. ELÍAS, and MARCEL G. CLERC. "DYNAMICS OF AN INTERFACE CONNECTING A STRIPE PATTERN AND A UNIFORM STATE: AMENDED NEWELL–WHITEHEAD–SEGEL EQUATION." International Journal of Bifurcation and Chaos 19, no. 08 (2009): 2801–12. http://dx.doi.org/10.1142/s0218127409024499.

Повний текст джерела

Анотація:

The dynamics of an interface connecting a stationary stripe pattern with a homogeneous state is studied. The conventional approach which describes this interface, Newell–Whitehead–Segel amplitude equation, does not account for the rich dynamics exhibited by these interfaces. By amending this amplitude equation with a nonresonate term, we can describe this interface and its dynamics in a unified manner. This model exhibits a rich and complex transversal dynamics at the interface, including front propagations, transversal patterns, locking phenomenon, and transversal localized structures.

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Habert, J., T. Machej, and T. Czeppe. "The phenomenon of wetting at solid/solid interface." Surface Science Letters 151, no. 1 (1985): A80. http://dx.doi.org/10.1016/0167-2584(85)90633-4.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Haber, J., T. Machej, and T. Czeppe. "The phenomenon of wetting at solid/solid interface." Surface Science 151, no. 1 (1985): 301–10. http://dx.doi.org/10.1016/0039-6028(85)90468-6.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Rezaee, Nastaran, John Aunna, and Jamal Naser. "Marangoni Flow Investigation in Foam Fractionation Phenomenon." Fluids 8, no. 7 (2023): 209. http://dx.doi.org/10.3390/fluids8070209.

Повний текст джерела

Анотація:

In this study, a numerical investigation of the Marangoni flow in foam fractionation was conducted, with a specific focus on the film of micro-foams in both the interior and exterior regions. A three-dimensional node–film–plateau border system was employed to model the system, utilizing time-dependent mass conservation equations. The study emphasized the influence of the surfactant concentration in the foam fractionation column and the mobility of the air–liquid interface on the Marangoni velocity within the film. The results indicated that higher surfactant concentration in the reflux column

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Yin, Lan, S. Balaji, and S. Seetharaman. "Effects of Nickel on Interface Morphology during Oxidation of Fe-Cu-Ni Alloys." Defect and Diffusion Forum 297-301 (April 2010): 318–29. http://dx.doi.org/10.4028/www.scientific.net/ddf.297-301.318.

Повний текст джерела

Анотація:

Steel produced in Electric Arc Furnaces (EAF) contain a high amount of copper that causes a detrimental surface cracking phenomenon called hot shortness. Studies have found that nickel can alleviate hot shortness by increasing copper solubility in the Fe phase, decreasing oxidation rate and promoting occlusion [1-3]. Occlusion is a phenomenon whereby the copper-rich phase becomes incorporated into iron oxides. Nickel promotes occlusion by causing an uneven interface and increasing the number of internal oxides. The uneven interface is likely a result of the two concentration fields resulting

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Fujii, Nobutoshi, Shunsuke Furuse, Hirotaka Yoshioka, et al. "(Invited) Bonding Strength of Cu-Cu Hybrid Bonding for 3D Integration Process." ECS Transactions 112, no. 3 (2023): 3–14. http://dx.doi.org/10.1149/11203.0003ecst.

Повний текст джерела

Анотація:

Cu-Cu hybrid bonding is a significant technology for fabricating 3D stacked semiconductor devices. In hybrid bonding, the calculation of bonding strength is complex due to the various materials present in the bonding interface. This interface not only includes Cu/Cu and dielectric/dielectric interfaces, but also the Cu/dielectric interface because of the misalignment of Cu pads. In this study, we developed an integrated model regarding total bonding strength, considering the different interfaces. Additionally, considering the thermal expansion of Cu pads, we demonstrated the dependence of bond

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Korpan, Lidiya. "Cultural Phenomenon Attributes in the Graphic User Interface Design." Vestnik Volgogradskogo gosudarstvennogo universiteta. Serija 7. Filosofiya. Sociologiya i socialnye tehnologii, no. 1 (May 2016): 130–36. http://dx.doi.org/10.15688/jvolsu7.2016.1.17.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Kushwaha, R. L., and J. Shen. "Numeric Simulation of Friction Phenomenon at Soil-Tool Interface." Tribology Transactions 38, no. 2 (1995): 424–30. http://dx.doi.org/10.1080/10402009508983424.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Weygand, D., Y. Bréchet, and Z. Néda. "Capillarity-driven interface dynamics: Application to grain growth phenomenon." Philosophical Magazine B 75, no. 6 (1997): 937–49. http://dx.doi.org/10.1080/13642819708205718.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Yawar, Abbas, Mi Ra Park, Quanli Hu, et al. "Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface." Journal of Nanoscience and Nanotechnology 15, no. 10 (2015): 7564–68. http://dx.doi.org/10.1166/jnn.2015.11133.

Повний текст джерела

Анотація:

To investigate the nature of the switching phenomenon at the metal-tantalum oxide interface, we fabricated a memory device in which a tantalum oxide amorphous layer acted as a switching medium. Different metals were deposited on top of the tantalum oxide layer to ensure that they will react with some of the oxygen contents already present in the amorphous layer of the tantalum oxide. This will cause the formation of metal oxide (MOx) at the interface. Two devices with Ti and Cu as the top electrodes were fabricated for this purpose. Both devices showed bipolar switching characteristics. The SE

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Toko, Kiyoshi, Kenichi Yoshikawa, Masaru Tsukiji, Masaaki Nosaka, and Kaoru Yamafuji. "On the oscillatory phenomenon in an oil/water interface." Biophysical Chemistry 22, no. 3 (1985): 151–58. http://dx.doi.org/10.1016/0301-4622(85)80037-5.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

14

KAMESUI, Go, and Hisayoshi MATSUSHIMA. "Study of Electrode Interface Phenomenon by Laser Interference Microscope." Journal of The Surface Finishing Society of Japan 73, no. 7 (2022): 343–48. http://dx.doi.org/10.4139/sfj.73.343.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Bhargava, Rohit, Shi-Qing Wang, and Jack L. Koenig. "FT-IR Imaging of the Interface in Multicomponent Systems Using Optical Effects Induced by Differences in Refractive Index." Applied Spectroscopy 52, no. 3 (1998): 323–28. http://dx.doi.org/10.1366/0003702981943653.

Повний текст джерела

Анотація:

For phase-separated multicomponent polymeric systems, characterization of the interface between the components is particularly challenging. We have observed an optical effect in the infrared that can be used to image the interface specifically. This method yields images of the interfaces based on the interfaces showing apparent absorption arising from changes in refractive index at frequencies far from the specific frequencies associated with the components of the mixture. This method has been applied to multicomponent samples of polymer-dispersed liquid crystals where the nature of the interf

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Onofrei, Daniel, and Andrew E. Thaler. "Anomalous Localized Resonance Phenomena in the Nonmagnetic, Finite-Frequency Regime." Advances in Mathematical Physics 2016 (2016): 1–28. http://dx.doi.org/10.1155/2016/4156072.

Повний текст джерела

Анотація:

The phenomenon of anomalous localized resonance (ALR) is observed at the interface between materials with positive and negative material parameters and is characterized by the fact that when a given source is placed near the interface, the electric and magnetic fields start to have very fast and large oscillations around the interface as the absorption in the materials becomes very small while they remain smooth and regular away from the interface. In this paper, we discuss the phenomenon of anomalous localized resonance (ALR) in the context of an infinite slab of homogeneous, nonmagnetic mate

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Char, K. "Crystal Interface Engineering in High Tc Oxides." MRS Bulletin 19, no. 9 (1994): 51–55. http://dx.doi.org/10.1557/s0883769400047990.

Повний текст джерела

Анотація:

Interfaces between metal oxides have not been studied as extensively as metal or semiconductor interfaces. Even in magnetic metallic systems, new phenomena are still being discovered, such as giant magnetoresistance, which has been attributed to an interface phenomenon. As general interest in metal oxides increases, researchers are studying a large variety of heterostructures consisting of superconducting oxides, conducting oxides, ferroelectric oxides, magnetic oxides, and optical oxides. As the complexity and level of integration increase, scientists need a better understanding of the interf

Стилі APA, Harvard, Vancouver, ISO та ін.

18

MIHAILOVIĆ, DRAGUTIN T., and GORDAN MIMIĆ. "KOLMOGOROV COMPLEXITY AND CHAOTIC PHENOMENON IN COMPUTING THE ENVIRONMENTAL INTERFACE TEMPERATURE." Modern Physics Letters B 26, no. 27 (2012): 1250175. http://dx.doi.org/10.1142/s0217984912501758.

Повний текст джерела

Анотація:

In this paper, we consider the chaotic phenomenon and Kolomogorov complexity in computing the environmental interface temperature. First, the environmental interface is defined in the context of the complex system, in particular for autonomous dynamical systems. Then we consider the following issues in modeling procedure: (i) how to replace given differential equations by appropriate difference equations in modeling of phenomena in the environmental world? (ii) whether a mathematically correct solution to the corresponding differential equation or system of equations is always physically possi

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Kondoh, Katsuyoshi, Nozomi Nakanishi, Rei Takei, Hiroyuki Fukuda, and Junko Umeda. "Evaluation of Initial Corrosion Phenomenon of Magnesium Alloys by SKPFM." Materials Science Forum 690 (June 2011): 397–400. http://dx.doi.org/10.4028/www.scientific.net/msf.690.397.

Повний текст джерела

Анотація:

Magnesium (Mg) has the lowest standard electrode potential in structural materials, and then it easily corroded for that property contacting with other metals. The corrosion resistance of Mg alloys was generally investigated by conducting saltwater immersion test, salt spray test, and electrochemical corrosion test. However, these tests give only macroscopic information but don’t give microscopic (i.e. galvanic corrosion at the interface). So, the origin of galvanic corrosion at the interface between dispersoids and a-Mg in Mg alloys was investigated for fundamental clarification. In this pape

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Chien, F. R., S. R. Nutt, J. M. Carulli, N. Buchan, C. P. Beetz та W. S. Yoo. "Heteroepitaxial growth of β'-SiC films on TiC substrates: Interface structures and defects". Journal of Materials Research 9, № 8 (1994): 2086–95. http://dx.doi.org/10.1557/jmr.1994.2086.

Повний текст джерела

Анотація:

Thin epitaxial films of β-SiC were grown by CVD on (100), (111), and (112) TiC substrates. TEM observations of the resulting interfaces revealed that island nucleation prevailed in the early stages of deposition for all three substrate orientations. Films grown on (111) and (112) TiC were monocrystalline, while SiC films deposited on (100) substrates were polycrystalline and not epitaxial, a phenomenon attributed to the poor match of atomic positions in SiC and TiC on their respective (100) planes. The (111) interface was abrupt and atomically flat, while the (112) interface exhibited {111} fa

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Liu, Peng, Hong Gui Guo, Jian Ping Jiang, and Bai Lian Sun. "Research on Oxygen Embrittlement Phenomenon of Interface of Titanium/Steel Explosive Welding Laminates." Applied Mechanics and Materials 275-277 (January 2013): 2276–79. http://dx.doi.org/10.4028/www.scientific.net/amm.275-277.2276.

Повний текст джерела

Анотація:

Optical metallographic examination, scanning electron microscope as well as energy dispersive X-ray spectrometry was operated to the interface of titanium/steel laminates manufactured by explosive welding. Brittle Ti-Fe-O layer was found at the interface of titanium/steel laminates, and microcosmic crack was found perpendicular to the interface of titanium/steel laminates in the brittle Ti-Fe-O layer. The reason for the emergence of brittle Ti-Fe-O layer was analysed.

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Chanthaphan, Atthawut, Takuji Hosoi, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, and Heiji Watanabe. "Degradation of SiO₂/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing." Materials Science Forum 778-780 (February 2014): 541–44. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.541.

Повний текст джерела

Анотація:

The impact of mobile ions intrinsically generated in thermally grown SiO2by high-temperature forming gas annealing (FGA) on the SiO2/4H-SiC interface properties was studied by means of electrical characterization of SiC metal-oxide-semiconductor (MOS) capacitors. Unlike Si devices, mobile ions located at the interfaces were found to cause a remarkable stretch-out of capacitance-voltage (C-V) curve near the accumulation condition, and the degree of stretch-out was more pronounced with increasing probe frequency. This suggests that the interface states with a long emission time constant are form

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Shim, Jee-Soo, Dong-Hyun Go, and Hyeon-Gyu Beom. "Effects of Geometric and Crystallographic Factors on the Reliability of Al/Si Vertically Cracked Nanofilm/Substrate Systems." Materials 14, no. 13 (2021): 3570. http://dx.doi.org/10.3390/ma14133570.

Повний текст джерела

Анотація:

In this study, tensile tests on aluminum/silicon vertically cracked nanofilm/substrate systems were performed using atomistic simulations. Various crystallographic orientations and thicknesses of the aluminum nanofilms were considered to analyze the effects of these factors on the reliability of the nanofilm/substrate systems. The results show that systems with some specific crystallographic orientations have lower reliability compared to the other orientations because of the penetration of the vertical crack into the silicon substrate. This penetration phenomenon occurring in a specific model

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Li, Wen, Peiyan Huang, Zhanbiao Chen, Xinyan Guo, and Bo Wu. "The shear stress reverse phenomenon in FRP sheet–concrete interface." Construction and Building Materials 344 (August 2022): 128192. http://dx.doi.org/10.1016/j.conbuildmat.2022.128192.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Johnson, Dale. "The discovery–development interface has become the new interfacial phenomenon." Drug Discovery Today 4, no. 12 (1999): 535–36. http://dx.doi.org/10.1016/s1359-6446(99)01423-3.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Fedorchenko, Sergey. "Artificial Intelligence Phenomenon: Citizen Between Digital Avatar and Political Interface." Journal of Political Research 4, no. 2 (2020): 34–57. http://dx.doi.org/10.12737/2587-6295-2020-34-57.

Повний текст джерела

Анотація:

The aim of the article is to study the features and technologies of artificial intelligence related to the state field and the political sphere of activity of a modern citizen. The methodological basis of the work was the principles of Case Study, comparative analysis. The SWOT analysis was used as another method. The fundamental analytical tool was the principles of the functional approach of Frank Johnson Goodnow, who shared the «state» and «political». The author came to the conclusion that digital rituals are rather contradictory elements of communication - they have both a collective and

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Nakayama, Ken-ichi, Masahiro Hiramoto, and Masaaki Yokoyama. "Numerical Simulations of Photocurrent Multiplication Phenomenon at Organic/Metal Interface." NIP & Digital Fabrication Conference 15, no. 1 (1999): 743–46. http://dx.doi.org/10.2352/issn.2169-4451.1999.15.1.art00094_2.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Lu, Wei, Dong Zhao, Xiao-fei Mao, and Yu Ai. "Experimental Study on Bond-Slip Behavior of Bamboo Bolt-Modified Slurry Interface under Pull-Out Load." Advances in Civil Engineering 2018 (February 8, 2018): 1–23. http://dx.doi.org/10.1155/2018/6960285.

Повний текст джерела

Анотація:

This paper presents an analysis of bamboo bolt-modified slurry interfaces based on 26 in situ axial pull-out tests intended to highlight the mechanical behavior of interface under a fracture mode. Three impact factors are analyzed: anchorage length, bolt diameter, and bolt hole diameter, using the same materials of bamboo and modified slurry. The result shows that the interface between the bamboo bolt and anchoring agent is the control interface of an anchorage system, and the local behavior of the interface involves four stages: elastic, soften, friction, and decoupling. Distribution law and

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Kiryanov, Denis Aleksandrovich. "Features of the organization and classification of virtual reality interfaces." Программные системы и вычислительные методы, no. 2 (February 2022): 25–41. http://dx.doi.org/10.7256/2454-0714.2022.2.38214.

Повний текст джерела

Анотація:

The subject of the study is the features of the organization of virtual reality interfaces. The author examines in detail such aspects of the topic as user involvement in the virtual environment, various ways and scenarios of user interaction with virtual reality, user security in the virtual environment, as well as such a phenomenon as cyberbullying and ways to prevent it. The study also considers the use of voice control as an alternative to manual. Particular attention in this study is paid to the classification of virtual reality interfaces, among which sensory interfaces, interfaces based

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Cao, Jiang Li, Kai Zhang, Axel Solbach, et al. "In Situ X-Ray Reflectivity Study of Imprint in Ferroelectric Thin Films." Materials Science Forum 687 (June 2011): 292–96. http://dx.doi.org/10.4028/www.scientific.net/msf.687.292.

Повний текст джерела

Анотація:

The structural origin of imprint in Pb(Zr,Ti)O3 (PZT) ferroelectric thin films derived by chemical solution deposition with Pt top and bottom electrodes was studied by in-situ high-resolution X-ray specular reflectivity of synchrotron radiation. Global structural parameters of density, thickness, and surface or interface roughness of each component layer in the thin film sample were obtained. No generation of interfacial layers with a different electron density from PZT and no interface roughening were observed at the interfaces of PZT and Pt during imprint. Thus, the results suggest that the

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Webler, B. A., and S. Sridhar. "Influence of Diffusion in the Underlying Metal during Oxidation of Iron Containing Small Amounts of Copper and Nickel." Defect and Diffusion Forum 283-286 (March 2009): 471–76. http://dx.doi.org/10.4028/www.scientific.net/ddf.283-286.471.

Повний текст джерела

Анотація:

The residual element copper in recycled steels embrittles grain boundaries, causing a surface cracking phenomenon known as hot shortness. Embrittlement is caused by a copper-rich liquid phase that forms at the oxide/metal interface during steel oxidation. Another residual element, nickel, enriches along with copper and reduces hot shortness cracking. The mechanisms by which nickel affects copper enrichment behavior have not yet been adequately studied. This work examines the effects of nickel and copper on the oxidation behavior and oxide/metal interface microstructure of iron. Iron-0.3 wt% co

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Yang, Xiong, Li Jun Zhang, and Yong Du. "Phase Field Modeling of Solute Trapping in a Al-Sn Alloy during Rapid Solidification." Materials Science Forum 794-796 (June 2014): 740–45. http://dx.doi.org/10.4028/www.scientific.net/msf.794-796.740.

Повний текст джерела

Анотація:

During rapid solidification, interfaces are often driven far from equilibrium and the "solute trapping" phenomenon is usually observed. Very recently, a phase field model with finite interface dissipation, in which separate kinetic equations are assigned to each phase concentration instead of an equilibrium partitioning condition, has been newly developed. By introducing the so-called interface permeability, the phase field model with finite interface dissipation can nicely describe solute trapping during solidification in the length scale of micrometer. This model was then applied to perform

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Balogh, Zoltán, Mohammed Reda Chellali, Patrick Stender, and Guido Schmitz. "Concentration Dependence of the Diffusion in the Ni/Cu System." Defect and Diffusion Forum 353 (May 2014): 177–82. http://dx.doi.org/10.4028/www.scientific.net/ddf.353.177.

Повний текст джерела

Анотація:

Deviations from the Fickian-laws of diffusion in the case of concentration dependent diffusion coefficients and high composition gradients gain more and more acceptance nowadays. The cause of this phenomenon is the finite permeability of the atomic layers, or in other words “interface control”. The consequences are wide-spreading e.g. linear diffusion kinetics, deviations in the nucleation behavior of reaction products and kinetically determined interface shape in miscible alloys. Furthermore, if the original chemical interface is broader than the optimum width, even a sharpening of the interf

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Wang, W. H., and W. K. Wang. "Amorphization phenomenon in Ni/amorphous Si multilayers." Journal of Materials Research 9, no. 2 (1994): 401–5. http://dx.doi.org/10.1557/jmr.1994.0401.

Повний текст джерела

Анотація:

Interfacial reactions of Ni/amorphous Si(a-Si) multilayers are studied by means of transmission electron microscopy (TEM) and cross-sectional transmission electron microscopy (XTEM). Transformation from a crystalline to an amorphous structure has been observed in as-deposited Ni/a-Si multilayers with small modulation periods. This phenomenon is suggested to be due to interdiffusion-induced solid state amorphization which is facilitated by the high density of interface in the shorter modulation period multilayers. A thermodynamic and kinetic explanation is given for this phenomenon.

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Morizono, Yasuhiro, Minoru Nishida, Yoshikazu Kodama, Takateru Yamamuro, and Yasuhide Ohno. "Surface Modification Technique Using Interfacial Reaction between Ti-Al Alloy and Steel." Materials Science Forum 539-543 (March 2007): 1248–52. http://dx.doi.org/10.4028/www.scientific.net/msf.539-543.1248.

Повний текст джерела

Анотація:

Diffusion bonding of Ti and Ti-Al (Ti-10, 20 and 40 mol%Al) alloys to high carbon steel was carried out at 1073 and 1273 K for 3.6 ks in a vacuum. It has been found that the joint with Ti-20 mol%Al alloy is separated in the vicinity of the interface promptly after the bonding treatment at 1273 K. Such a phenomenon could not be observed in other Ti-Al alloy/steel joints, and the Ti-20 mol%Al alloy/steel joint bonded at 1073 K showed a high strength of about 170 MPa. Therefore, this phenomenon depends on the bonding temperature and the composition of the Ti-Al alloys. From the observation result

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Weng, Shayuan, Xiang Chen, Xing Yue, Tao Fu, and Xianghe Peng. "Inapparent Strengthening Effect of Twin Interface in Cu/Pd Multilayered Films with a Large Lattice Mismatch." Nanomaterials 9, no. 12 (2019): 1778. http://dx.doi.org/10.3390/nano9121778.

Повний текст джерела

Анотація:

It has been found that there are two kinds of interfaces in a Cu/Pd multilayered film, namely, cube-on-cube and twin. However, the effects of the interfacial structure and modulation period on the mechanical properties of a Cu/Pd multilayered film remain unclear. In this work, molecular dynamics simulations of Cu/Pd multilayered film with different interfaces and modulation periods under in-plane tension are performed to investigate the effects of the interfacial structure and modulation period. The interface misfit dislocation net exhibits a periodic triangular distribution, while the residua

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Li, Wen, Peiyan Huang, Zhanbiao Chen, Hangyue Cui, Xinyan Guo, and Bo Wu. "Bond–slip model considering the interface shear stress reversal phenomenon and data dispersion for FRP–concrete interface." Engineering Fracture Mechanics 268 (June 2022): 108492. http://dx.doi.org/10.1016/j.engfracmech.2022.108492.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Li, Wen, Peiyan Huang, Zhanbiao Chen, Hangyue Cui, Xinyan Guo, and Bo Wu. "Bond–slip model considering the interface shear stress reversal phenomenon and data dispersion for FRP–concrete interface." Engineering Fracture Mechanics 268 (June 2022): 108492. http://dx.doi.org/10.1016/j.engfracmech.2022.108492.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Fakhari, Ahmad, Željko Tukovic, Olga Sousa Carneiro, and Célio Fernandes. "An Effective Interface Tracking Method for Simulating the Extrudate Swell Phenomenon." Polymers 13, no. 8 (2021): 1305. http://dx.doi.org/10.3390/polym13081305.

Повний текст джерела

Анотація:

The extrudate swell, i.e., the geometrical modifications that take place when the flowing material leaves the confined flow inside a channel and moves freely without the restrictions that are promoted by the walls, is a relevant phenomenon in several polymer processing techniques. For instance, in profile extrusion, the extrudate cross-section is subjected to a number of distortions that are motivated by the swell, which are very difficult to anticipate, especially for complex geometries. As happens in many industrial processes, numerical modelling might provide useful information to support d

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Morizono, Yasuhiro, Yoshikazu Kodama, Takateru Yamamuro, and Minoru Nishida. "Interface Separation Phenomenon in Ti-20mol%Al Alloy/Iron Material Joints." Tetsu-to-Hagane 94, no. 7 (2008): 251–57. http://dx.doi.org/10.2355/tetsutohagane.94.251.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Hiramoto, Masahiro, Kouji Suemori, and Masaaki Yokoyama. "Influence of Oxygen on Photocurrent Multiplication Phenomenon at Organic/Metal Interface." Japanese Journal of Applied Physics 42, Part 1, No. 4B (2003): 2495–97. http://dx.doi.org/10.1143/jjap.42.2495.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Zhuang, Shengyi, and Yaodong Liu. "Interface-Controlled Thermal Rectification Phenomenon of Monolayer Graphene/Boron Nitride Heterosheet." Journal of Physical Chemistry Letters 11, no. 22 (2020): 9731–37. http://dx.doi.org/10.1021/acs.jpclett.0c02993.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Law, B. M. "Multilayer wetting phenomenon at a binary liquid-vapor interface. I. Theory." Physical Review B 32, no. 9 (1985): 5987–95. http://dx.doi.org/10.1103/physrevb.32.5987.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Mahcene, Hocine, Nedjma Meddour, Djamel Bechki, Hamza Bouguettaia, and Hocine Ben Moussa. "Radiation Phenomenon in Electrodes/Electrolyte Interface of Solid Oxide Fuel Cells." Energy Procedia 50 (2014): 229–36. http://dx.doi.org/10.1016/j.egypro.2014.06.028.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

45

You, Hoydoo, and Zoltán Nagy. "Applications of Synchrotron Surface X-Ray Scattering Studies of Electrochemical Interfaces." MRS Bulletin 24, no. 1 (1999): 36–40. http://dx.doi.org/10.1557/s088376940005171x.

Повний текст джерела

Анотація:

Aqueous-solution/solid interfaces are ubiquitous in modern manufacturing environments as well as in our living environment, and studies of such interfaces are an active area of science and engineering research. An important area is the study of liquid/solid interfaces under active electrochemical control, which has many immediate technological implications, for example, corrosion/passivation of metals and energy storage in batteries and ultracapacitors. The central phenomenon of electrochemistry is the charge transfer at the interface, and the region of interest is usually wider than a single

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Dong, Xiao Li, and Lei Wang. "The Research Methods of Mechanical Characteristics on the Soil-Structure Interface." Applied Mechanics and Materials 170-173 (May 2012): 1107–10. http://dx.doi.org/10.4028/www.scientific.net/amm.170-173.1107.

Повний текст джерела

Анотація:

There are general three kinds of means to research the mechanical properties of soil-structure interface, and they are soil-structure contact experimental studies, constitutive model and numerical calculation. Through the tests, the observation and measurement results in different experimental conditions can be obtained about soil-structure interface stress-strain characteristics, and then basing on the existing constitutive model theory researchers can put forward reasonable explanation to the phenomenon of the tests. Finally the constitutive model theory can be applied to the numerical calcu

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Jin, Fengjie, Liang Su, Zhimin Yan, Fuxing Jiao, Yuanming Zhang, and Xiang Liu. "P‐129: The Black Spot Phenomenon and Improvement in QLED Devices." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 1893–94. http://dx.doi.org/10.1002/sdtp.17955.

Повний текст джерела

Анотація:

In this paper, we studied the influence of ETL (electron transporting layer)and cathode material type as well as their interface on the performance of QLED (quantum dot light emitting devices). Through our research, we found that the black spot phenomenon of QLED device is strongly related to ETL material, and the number of black spots can be greatly reduced by improve ETL. In addition, the cathode material such as Ag and Al, also show their impact on black spots; Finally, one novel double‐layer ETL structure device was developed to avoid black spot, which manifest that the interaction between

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Tang, Liling, and Feng Jin. "Influence of viscoelastic interfaces on power transmission through an elastic plate by finite piezoelectric transducers." Journal of Vibration and Control 23, no. 7 (2016): 1193–205. http://dx.doi.org/10.1177/1077546315591335.

Повний текст джерела

Анотація:

A finite elastic plate, partially covered by piezoelectric patches on two sides to periodically charge or recharge electronic devices operating in a sealed armor, is considered to study the effects of a viscoelastic interface on the resonant frequency, transformation ratio, efficiency, displacement and stress distributions of the structure. Based on the shear-slip model, we apply the Fourier series method to analyze the symmetric thickness-twist modes of the system containing an imperfect viscoelastic interface. An examination of the numerical results confirms the good convergence and high pre

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Zhang, Si Feng, Xiu Guang Song, Yan Mei Li, and Kai Yao. "Study on the Interface Mechanical Characteristic of Geotechnical Prestressed Anchorage Bolt under Step Loading by Model Test." Applied Mechanics and Materials 90-93 (September 2011): 1859–64. http://dx.doi.org/10.4028/www.scientific.net/amm.90-93.1859.

Повний текст джерела

Анотація:

The development and evolution regularity of the interface shear stress for the inner bond section of geotechnical prestressed anchorage structure is directly related to the ultimate bearing capacity and its long-term durability. By adopting the similar model test and embedding the strain brick at each interfaces of inner bond section, the interface mechanical properties under step loading were systematically studied. Conclusions can be drawn as follows: the interface shear stress along the axial direction of rod is not evenly distributed, and the interface distribution shape at different radia

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Surjus, Luciana Togni de Lima e. Silva, and Rosana Teresa Onocko Campos. "Interface between Intellectual Disability and Mental Health: hermeneutic review." Revista de Saúde Pública 48, no. 3 (2014): 532–40. http://dx.doi.org/10.1590/s0034-8910.2014048004711.

Повний текст джерела

Анотація:

A literature review was conducted aiming to understand the interface between the Intellectual Disability and Mental Health fields and to contribute to mitigating the path of institutionalizing individuals with intellectual deficiencies. The so-called dual diagnosis phenomenon remains underestimated in Brazil but is the object of research and specific public policy internationally. This phenomenon alerts us to the prevalence of mental health problems in those with intellectual disabilities, limiting their social inclusion. The findings reinforce the importance of this theme and indicate possibl

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!