Статті в журналах: "Interface conductivity"

1

Liu, Ying-Guang, Xin-Qiang Xue, Jin-Wen Zhang, and Guo-Liang Ren. "Thermal conductivity of materials based on interfacial atomic mixing." Acta Physica Sinica 71, no. 9 (2022): 093102. http://dx.doi.org/10.7498/aps.71.20211451.

Повний текст джерела

Анотація:

The Si/Ge single interface and superlattice structure with atom mixing interfaces are constructed. The effects of interfacial atomic mixing on thermal conductivity of single interface and superlattice structures are studied by non-equilibrium molecular dynamics simulation. The effects of the number of atomic mixing layers, temperature, total length of the system and period length on the thermal conductivity for different lattice structures are studied. The results show that the mixing of two and four layers of atoms can improve the thermal conductivity of Si/Ge lattice with single interface and the few-period superlattice due to the “phonon bridging” mechanism. When the total length of the system is large, the thermal conductivity of the superlattice with atomic mixing interfaces decreases significantly compared with that of the perfect interface. The interfacial atom mixing will destroy the phonon coherent transport in the superlattice and reduce the thermal conductivity to some extent. The superlattce with perfect interface has obvious temperature effect, while the thermal conductivity of the superlattice with atomic mixing is less sensitive to temperature.

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Liang, J.-J., and P. W.-C. Kung. "Toward Rational Design of Fast Ion Conductors: Molecular Dynamics Modeling of Interfaces of Nanoscale Planar Heterostructures." Journal of Materials Research 17, no. 7 (July 2002): 1686–91. http://dx.doi.org/10.1557/jmr.2002.0248.

Повний текст джерела

Анотація:

Increased ionic conductivity at nanoscale planar interfaces of the CaF2|BaF2 system was successfully modeled using molecular dynamics simulations. A criterion was established to construct simulation cells containing any arbitrarily lattice-mismatched interfaces while permitting periodic boundary condition. The relative (to the bulk) ionic conductivity increase at the 111 (CaF2)|111 (BaF2) interface was qualitatively reproduced. Higher conductivity, by a factor of 7.6, was predicted for the 001 (CaF2)|001 (BaF2) interface. A crystalline nanocomposite of the CaF2|BaF2 system, in which the [001] morphology is encouraged and crystallite dimensions are approximately 4 nm, was proposed to give ionic conductivity approaching that predicted for the 001 (CaF2)|001 (BaF2) interface.

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Wang, Xiaoyu, Cynthia J. Jameson, and Sohail Murad. "Interfacial Thermal Conductivity and Its Anisotropy." Processes 8, no. 1 (December 24, 2019): 27. http://dx.doi.org/10.3390/pr8010027.

Повний текст джерела

Анотація:

There is a significant effort in miniaturizing nanodevices, such as semi-conductors, currently underway. However, a major challenge that is a significant bottleneck is dissipating heat generated in these energy-intensive nanodevices. In addition to being a serious operational concern (high temperatures can interfere with their efficient operation), it is a serious safety concern, as has been documented in recent reports of explosions resulting from many such overheated devices. A significant barrier to heat dissipation is the interfacial films present in these nanodevices. These interfacial films generally are not an issue in macro-devices. The research presented in this paper was an attempt to understand these interfacial resistances at the molecular level, and present possibilities for enhancing the heat dissipation rates in interfaces. We demonstrated that the thermal resistances of these interfaces were strongly anisotropic; i.e., the resistance parallel to the interface was significantly smaller than the resistance perpendicular to the interface. While the latter is well-known—usually referred to as Kapitza resistance—the anisotropy and the parallel component have previously been investigated only for solid-solid interfaces. We used molecular dynamics simulations to investigate the density profiles at the interface as a function of temperature and temperature gradient, to reveal the underlying physics of the anisotropy of thermal conductivity at solid-liquid, liquid-liquid, and solid-solid interfaces.

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Chen, T., C. H. Hsieh, and P. C. Chuang. "A Spherical Inclusion with Inhomogeneous Interface in Conduction." Journal of Mechanics 19, no. 1 (March 2003): 1–8. http://dx.doi.org/10.1017/s1727719100004135.

Повний текст джерела

Анотація:

ABSTRACTA series solution is presented for a spherical inclusion embedded in an infinite matrix under a remotely applied uniform intensity. Particularly, the interface between the inclusion and the matrix is considered to be inhomegeneously bonded. We examine the axisymmetric case in which the interface parameter varies with the cone angle θ. Two kinds of imperfect interfaces are considered: an imperfect interface which models a thin interphase of low conductivity and an imperfect interface which models a thin interphase of high conductivity. We show that, by expanding the solutions of terms of Legendre polynomials, the field solution is governed by a linear set of algebraic equations with an infinite number of unknowns. The key step of the formulation relies on algebraic identities between coefficients of products of Legendre series. Some numerical illustrations are presented to show the correctness of the presented procedures. Further, solutions of the boundary-value problem are employed to estimate the effective conductivity tensor of a composite consisting of dispersions of spherical inclusions with equal size. The effective conductivity solely depends on one particular constant among an infinite number of unknowns.

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Chen, G. "Size and Interface Effects on Thermal Conductivity of Superlattices and Periodic Thin-Film Structures." Journal of Heat Transfer 119, no. 2 (May 1, 1997): 220–29. http://dx.doi.org/10.1115/1.2824212.

Повний текст джерела

Анотація:

Superlattices consisting of alternating layers of extremely thin films often demonstrate strong quantum size effects that have been utilized to improve conventional devices and develop new ones. The interfaces in these structures also affect their thermophysical properties through reflection and transmission of heat carriers. This work develops models on the effective thermal conductivity of periodic thin-film structures in the parallel direction based on the Boltzmann transport equation. Different interface conditions including specular, diffuse, and partially specular and partially diffuse interfaces, are considered. Results obtained from the partially specular and partially diffuse interface scattering model are in good agreement with experimental data on GaAs/AlAs superlattices. The study shows that the atomic scale interface roughness is the major cause for the measured reduction in the superlattice thermal conductivity. This work also suggests that by controlling interface roughness, the effective thermal conductivity of superlattices made of bulk materials with high thermal conductivities can be reduced to a level comparable to those of amorphous materials, while maintaining high electrical conductivities. This suggestion opens new possibilities in the search of high efficiency thermoelectric materials.

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Zhang, Mei, and Peng Cheng Zhai. "Effective Thermal Conductivity of Composites with Different Particle Geometries and Interfacial Thermal Resistance." Advanced Materials Research 152-153 (October 2010): 269–73. http://dx.doi.org/10.4028/www.scientific.net/amr.152-153.269.

Повний текст джерела

Анотація:

A new micromechanical method, the weighted residual self-consistent method (WRSCM) is developed to study the effective thermal conductivity of two-phase composites with different particle geometries in the presence of a thermal barrier resistance at the interface between constituents. The imperfect interface involves the continuity of the normal flux but allow for a finite temperature differences across the interface. Within the framework of self-consistent scheme, the effective thermal conductivity of two-phase composite is obtained using numerical iterative method on the basis of a surface integral of temperature over the imperfect interfaces. Numerical results show that for the given composite system, due to the existence of an interfacial thermal resistance, the particle geometries have significant impact on the effective thermal conductivity of composites.

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Liu, Ji-Chuan. "Shape Reconstruction of Conductivity Interface Problems." International Journal of Computational Methods 16, no. 01 (November 21, 2018): 1850092. http://dx.doi.org/10.1142/s0219876218500925.

Повний текст джерела

Анотація:

In this paper, we consider a conductivity interface problem to recover the salient features of the inclusion within a body from noisy observation data on the boundary. Based on integral equations, we propose iterative algorithms to detect the location, the size and the shape of the conductivity inclusion. This problem is severely ill-posed and nonlinear, thus we should consider regularization techniques in order to improve the corresponding approximation. We give several examples to show the viability of our proposed reconstruction algorithms.

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Ammari, Habib, Hyeonbae Kang, Mikyoung Lim, and Habib Zribi. "Conductivity interface problems. Part I: Small perturbations of an interface." Transactions of the American Mathematical Society 362, no. 5 (December 16, 2009): 2435–49. http://dx.doi.org/10.1090/s0002-9947-09-04842-9.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Zhao, Xiang Fu, Ping Han, Shelley Scott, and Max G. Lagally. "Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes." Advanced Materials Research 383-390 (November 2011): 7220–23. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.7220.

Повний текст джерела

Анотація:

Electrical conductivity of silicon nanomembranes (SiNMs) was measured by van der Pauw method under two surface modifications: hydrofluoric acid (HF) treatment and vacuum-hydrogenated(VH) treatment, which create hydrogen-terminated surface; and one interface modification: forming gas (5% H2 in N2) anneal, which causes hydrogen passivated interfaces. The results show that thinner SiNMs are more sensitive to the surface modifications, and HF treatment can cause larger drop of sheet resistance than that caused by VH treatment probably because of Fluorine (F). Forming gas anneal can also improve the conductivity depending on the interface trap density.

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Mohamed, Mazlan, Mohd Nazri Omar, Mohamad Shaiful Ashrul Ishak, Rozyanty Rahman, Nor Zaiazmin Yahaya, Mohammad Khairul Azhar Abdul Razab, and Mohd Zharif Ahmad Thirmizir. "Comparison between CNT Thermal Interface Materials with Graphene Thermal Interface Material in Term of Thermal Conductivity." Materials Science Forum 1010 (September 2020): 160–65. http://dx.doi.org/10.4028/www.scientific.net/msf.1010.160.

Повний текст джерела

Анотація:

Thermal interface material (TIM) had been well conducted and developed by using several material as based material. A lot of combination and mixed material were used to increase thermal properties of TIM. Combination between materials for examples carbon nanotubes (CNT) and epoxy had had been used before but the significant of the studied are not exactly like predicted. In this studied, thermal interface material using graphene and CNT as main material were used to increase thermal conductivity and thermal contact resistance. These two types of TIM had been compare to each other in order to find wich material were able to increase the thermal conductivity better. The sample that contain 20 wt. %, 40 wt. % and 60 wt. % of graphene and CNT were used in this studied. The thermal conductivity of thermal interface material is both measured and it was found that TIM made of graphene had better thermal conductivity than CNT. The highest thermal conductivity is 23.2 W/ (mK) with 60 w. % graphene meanwhile at 60 w. % of CNT only produce 12.2 W/ (mK thermal conductivity).

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Mohamed, Mazlan, Mohd Nazri Omar, Mohamad Shaiful Ashrul Ishak, Rozyanty Rahman, Zaiazmin Y.N, and Zairi Ismael Rizman. "Thermal Properties of the Graphene Composites: Application of Thermal Interface Materials." International Journal of Engineering & Technology 7, no. 4.33 (December 9, 2018): 530. http://dx.doi.org/10.14419/ijet.v7i4.33.28169.

Повний текст джерела

Анотація:

Epoxy mixed with others filler for thermal interface material (TIM) had been well conducted and developed. There are problem occurs when previous material were used as matrix material likes epoxy that has non-uniform thickness of thermal interface material produce, time taken for solidification and others. Thermal pad or thermal interface material using graphene as main material to overcome the existing problem and at the same time to increase thermal conductivity and thermal contact resistance. Three types of composite graphene were used for thermal interface material in this research. The sample that contain 10 wt. %, 20 wt. % and 30 wt. % of graphene was used with different contain of graphene oxide (GO). The thermal conductivity of thermal interface material is both measured and it was found that the increase of amount of graphene used will increase the thermal conductivity of thermal interface material. The highest thermal conductivity is 12.8 W/ (mK) with 30 w. % graphene. The comparison between the present thermal interface material and other thermal interface material show that this present graphene-epoxy is an excellent thermal interface material in increasing thermal conductivity.

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Nenuwe, O. N., and O. E. Agbalagba. "Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics." Journal of Applied Sciences and Environmental Management 23, no. 10 (November 21, 2019): 1901–6. http://dx.doi.org/10.4314/jasem.v23i10.21.

Повний текст джерела

Анотація:

It is well known that the physics of thermal management is quite challenging as electronic device sizes are miniaturized and new materials are developed. This study calculates the thermal interface conductance (TIC), thermal interface resistance (TIR) and thermal grain conductivity across GaAs(110)/GaAs(100) and GaAs/InAs interfaces using the reverse non-equilibrium molecular dynamics (RNEMD) technique. Data obtained showed that, at GaAs(110)/GaAs(100) the TIC increased from 0.912 x 10-9 (W/K) to 1.433 x 10-9 (W/K), the TIR decreased from 1.096 x 109 (K/W) to 0.697 x 109 (K/W) between 300 K and 1000 K, and the thermal grain conductivity increased from 7.47 (W/mK) to 15.52 (W/mK) and 7.48 (W/mK) to 80.71 (W/mK) between 15 Å and 55 Å at 300 K. At GaAs/InAs interface the TIC increased from 7.228 x -10 (W/K) to 14.498 x 10-10 (W/K) and the TIR decreased from 0.138 x 1010 (K/W) to 0.068 x 1010 (K/W) between 300 K and 700 K, respectively. It was observed that, as temperature is increased the TIC and TIR for both materials change significantly. This trend is consistent with previous molecular dynamic studies of interface materials.Keywords: Interface conductance, thermal resistance, grain conductivity, temperature.

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Nakamura, Y., T. Ishibe, T. Taniguchi, T. Terada, R. Hosoda, and Sh Sakane. "Semiconductor Nanostructure Design for Thermoelectric Property Control." International Journal of Nanoscience 18, no. 03n04 (March 28, 2019): 1940036. http://dx.doi.org/10.1142/s0219581x19400362.

Повний текст джерела

Анотація:

We present the methodologies for developing high-performance thermoelectric materials using nanostructured interfaces by reviewing our three studies and giving the new aspect of nanostructuring results. (1) Connected Si nanocrystals exhibited ultrasmall thermal conductivity. The drastic thermal conductivity reduction was brought by phonon confinement and phonon scattering. Here, we present discussion about the new aspect for phonon transport: not only nanocrystal size but also shape can contribute to thermal conductivity reduction. (2) Si films including Ge nanocrystals demonstrated that phonon and carrier conductions were independently controlled in the films, where carriers were easily transported through the interfaces between Si and Ge, while phonons could be effectively scattered at the interfaces. (3) Embedded-ZnO nanowire structure demonstrated the simultaneous realization of power factor increase and thermal conductivity reduction. The [Formula: see text] increase was caused by the interface-dominated carrier transport. The nanowire interfaces also worked as phonon scatterers, resulting in the thermal conductivity reduction.

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Abramson, Alexis R., Chang-Lin Tien, and Arun Majumdar. "Interface and Strain Effects on the Thermal Conductivity of Heterostructures: A Molecular Dynamics Study." Journal of Heat Transfer 124, no. 5 (September 11, 2002): 963–70. http://dx.doi.org/10.1115/1.1495516.

Повний текст джерела

Анотація:

Molecular dynamics simulations are used to examine how thermal transport is affected by the presence of one or more interfaces. Parameters such as film thickness, the ratio of respective material composition, the number of interfaces per unit length, and lattice strain are considered. Results indicate that for simple nanoscale strained heterostructures containing a single interface, the effective thermal conductivity may be less than half the value of an average of the thermal conductivities of the respective unstrained thin films. Increasing the number of interfaces per unit length, however, does not necessarily result in a corresponding decrease in the effective thermal conductivity of the superlattice.

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Gilbert, Simeon J., Samantha G. Rosenberg, Paul G. Kotula, Thomas G. Kmieciak, Laura B. Biedermann, and Michael P. Siegal. "The effect of metal–insulator interface interactions on electrical transport in granular metals." Journal of Physics: Condensed Matter 34, no. 20 (March 14, 2022): 204007. http://dx.doi.org/10.1088/1361-648x/ac5706.

Повний текст джерела

Анотація:

Abstract We present an in-depth study of metal–insulator interfaces within granular metal (GM) films and correlate their interfacial interactions with structural and electrical transport properties. Nominally 100 nm thick GM films of Co and Mo dispersed within yttria-stabilized zirconia (YSZ), with volumetric metal fractions (φ) from 0.2–0.8, were grown by radio frequency co-sputtering from individual metal and YSZ targets. Scanning transmission electron microscopy and DC transport measurements find that the resulting metal islands are well-defined with 1.7–2.6 nm average diameters and percolation thresholds between φ = 0.4–0.5. The room temperature conductivities for the φ = 0.2 samples are several orders of magnitude larger than previously-reported for GMs. X-ray photoemission spectroscopy indicates both oxygen vacancy formation within the YSZ and band-bending at metal–insulator interfaces. The higher-than-predicted conductivity is largely attributed to these interface interactions. In agreement with recent theory, interactions that reduce the change in conductivity across the metal–insulator interface are seen to prevent sharp conductivity drops when the metal concentration decreases below the percolation threshold. These interface interactions help interpret the broad range of conductivities reported throughout the literature and can be used to tune the conductivities of future GMs.

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Do, Duc Phi, and Dashnor Hoxha. "Temperature and Pressure Dependence of the Effective Thermal Conductivity of Geomaterials: Numerical Investigation by the Immersed Interface Method." Journal of Applied Mathematics 2013 (2013): 1–13. http://dx.doi.org/10.1155/2013/456931.

Повний текст джерела

Анотація:

The present work aims to study the nonlinear effective thermal conductivity of heterogeneous composite-like geomaterials by using a numerical approach based on the immersed interface method (IIM). This method is particularly efficient at solving the diffusion problem in domains containing inner boundaries in the form of perfect or imperfect interfaces between constituents. In this paper, this numerical procedure is extended in the framework of non linear behavior of constituents and interfaces. The performance of the developed tool is then demonstrated through the studies of temperature- and pressure-dependent effective thermal conductivity of geomaterials with imperfect interfaces.

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Sharma, P., S. Ryu, J. D. Burton, T. R. Paudel, C. W. Bark, Z. Huang, Ariando, et al. "Mechanical Tuning of LaAlO3/SrTiO3 Interface Conductivity." Nano Letters 15, no. 5 (April 10, 2015): 3547–51. http://dx.doi.org/10.1021/acs.nanolett.5b01021.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

18

Oliver, D. J., J. Maassen, M. El Ouali, W. Paul, T. Hagedorn, Y. Miyahara, Y. Qi, H. Guo, and P. Grutter. "Conductivity of an atomically defined metallic interface." Proceedings of the National Academy of Sciences 109, no. 47 (November 5, 2012): 19097–102. http://dx.doi.org/10.1073/pnas.1208699109.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Toller, Erik A. L., and Otto D. L. Strack. "Interface Flow With Vertically Varying Hydraulic Conductivity." Water Resources Research 55, no. 11 (November 2019): 8514–25. http://dx.doi.org/10.1029/2019wr024927.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Shibuya, Keisuke, Tsuyoshi Ohnishi, Mikk Lippmaa, and Masaharu Oshima. "Metallic conductivity at the CaHfO3∕SrTiO3 interface." Applied Physics Letters 91, no. 23 (December 3, 2007): 232106. http://dx.doi.org/10.1063/1.2816907.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Nguyen, Van-Luat. "Estimating the effective conductivity for ellipse-inclusion model with Kapitza thermal resistance." EPJ Applied Metamaterials 8 (2021): 16. http://dx.doi.org/10.1051/epjam/2021010.

Повний текст джерела

Анотація:

The ellipse assemblage model with imperfect interface has quite complex microstructure, that can be considered an extension of the circle assemblage model with imperfect interfaces. The paper introduces an approximate method for computing the effective conductivity of isotropic composites with imperfect interfaces in two-dimensional space. Based on the coated-ellipse assemblage model and the equivalent inclusion approximation, one can determine the effective thermal conductivity of the composites. The polarization approximation is given in an explicit form (PEK) and this method will be applied to calculate the effective conductivity of the composite with Kapitza thermal resistance model. The PEK result will have compared with the Fast Fourier Transform (FFT) simulation and Hashin-strikman bounds (HS).

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Guo, Xiaojie, Weiwei Zhao, Yi Zeng, Chucheng Lin, and Jimei Zhang. "Effects of Splat Interfaces, Monoclinic Phase and Grain Boundaries on the Thermal Conductivity of Plasma Sprayed Yttria-Stabilized Zirconia Coatings." Coatings 9, no. 1 (January 3, 2019): 26. http://dx.doi.org/10.3390/coatings9010026.

Повний текст джерела

Анотація:

Microstructure has a significant influence on the thermal conductivity of thermal barrier coating (TBC) systems. In this work, the microstructures including splat interface, monoclinic phase and grain boundaries in the YSZ air plasma spraying (APS) TBC systems are investigated. A finite element simulation model based on electron backscatter diffraction (EBSD) images is established. It is found that the simulation results of thermal conductivity are in good agreement with the experimental results. Using this model, the effect coefficient of splat interface, monoclinic phase and grain boundaries on thermal conductivity are calculated. Results show that the splat interface influences the thermal conductivity of the TBCs. Those results provide important guidance for reducing the thermal conductivity of thermal barrier coatings.

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Yao, Chi, Chen He, Jianhua Yang, Qinghui Jiang, Jinsong Huang, and Chuangbing Zhou. "A Novel Numerical Model for Fluid Flow in 3D Fractured Porous Media Based on an Equivalent Matrix-Fracture Network." Geofluids 2019 (January 3, 2019): 1–13. http://dx.doi.org/10.1155/2019/9736729.

Повний текст джерела

Анотація:

An original 3D numerical approach for fluid flow in fractured porous media is proposed. The whole research domain is discretized by the Delaunay tetrahedron based on the concept of node saturation. Tetrahedral blocks are impermeable, and fluid only flows through the interconnected interfaces between blocks. Fractures and the porous matrix are replaced by the triangular interface network, which is the so-called equivalent matrix-fracture network (EMFN). In this way, the three-dimensional seepage problem becomes a two-dimensional problem. The finite element method is used to solve the steady-state flow problem. The big finding is that the ratio of the macroconductivity of the whole interface network to the local conductivity of an interface is linearly related to the cubic root of the number of nodes used for mesh generation. A formula is presented to describe this relationship. With this formula, we can make sure that the EMFN produces the same macroscopic hydraulic conductivity as the intact rock. The approach is applied in a series of numerical tests to demonstrate its efficiency. Effects of the hydraulic aperture of fracture and connectivity of the fracture network on the effective hydraulic conductivity of fractured rock masses are systematically investigated.

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Kalabukhov, A., T. Claeson, P. P. Aurino, R. Gunnarsson, D. Winkler, E. Olsson, N. Tuzla, et al. "Electrical and structural properties of ABO3/SrTiO3 interfaces." MRS Proceedings 1454 (2012): 167–72. http://dx.doi.org/10.1557/opl.2012.925.

Повний текст джерела

Анотація:

ABSTRACTElectrical transport and microstructure of interfaces between nm-thick films of various perovskite oxides grown by pulsed laser deposition (PLD) on TiO2- terminated SrTiO3 (STO) substrates are compared. LaAlO3/STO and KTaO3/STO interfaces become quasi-2DEG after a critical film thickness of 4 unit cell layers. The conductivity survives long anneals in oxygen atmosphere. LaMnO3/STO interfaces remain insulating for all film thicknesses and NdGaO3/STO interfaces are conducting but the conductivity is eliminated after oxygen annealing. Medium-energy ion spectroscopy and scanning transmission electron microscopy detect cationic intermixing within several atomic layers from the interface in all studied interfaces. Our results indicate that the electrical reconstruction in the polar oxide interfaces is a complex combination of different mechanisms, and oxygen vacancies play an important role.

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Zhang, Yong, Baohua Wen, Liang Ma, and Xiaolin Liu. "Determination of damage zone in fatigued lead zirconate titanate ceramics by complex impedance analysis." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, CICMT (September 1, 2012): 000592–96. http://dx.doi.org/10.4071/cicmt-2012-tha22.

Повний текст джерела

Анотація:

The electric properties of the modified lead zirconnate titanate ceramics with different fatigue cycles were studied over a temperature range of 300 to 550 °C. Combination of impedance and conductivity plots was utilized to understand the contributions arising from different regions in the PZT ceramics, i.e. the grain boundary and ceramic-electrode interface region. The results showed that both the dc conductivity of the ceramic-electrode interface and the dc conductivity of the grain boundary decrease with increasing cycle number. And the dc conductivity of the ceramic-electrode interface decreases larger during the fatigue process. Based on these results, we deduce that the damage zones underneath the electrodes are the main source of fatigue in ceramics.

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Dong, Z. C., L. Sheng, Weiyi Zhang, D. Y. Xing, and Jinming Dong. "Effects of Interface Scattering on the Electronic Conductivity of Bimetallic Films." International Journal of Modern Physics B 11, no. 20 (August 10, 1997): 2393–404. http://dx.doi.org/10.1142/s0217979297001210.

Повний текст джерела

Анотація:

We have extended our previous study on the electronic transport in metallic films to include the rough interface using the quantum statistical approach. The one-particle Green's function and the in-plane conductivity are calculated by taking into account both the quantum size effects and scattering processes resulting from bulk impurities, rough surfaces, and a rough interface. Our result shows that the conductivity is a sensitive function of interface roughness and decreases rapidly as the roughness increases. It is found that in the thin-film limit and in the lowest-order approximation of the surface and interface scatterings, the total conductivity is given by a sum of conductivities of all the subbands and the scattering rates for each subband due to the impurities, surfaces, and interface are additive.

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Alvarez-Zauco, E., H. Sobral, and E. Martínez-Loran. "Morphological, Optical and Electrical Characterization of the Interfaces in Fullerene-Porphyrin Thin Films." Journal of Nanoscience and Nanotechnology 20, no. 3 (March 1, 2020): 1732–39. http://dx.doi.org/10.1166/jnn.2020.17138.

Повний текст джерела

Анотація:

The role of the interfaces on the optoelectronical properties of porphyrin-fullerene composites has been studied by means of ultraviolet-visible (UV-Vis) and Raman spectroscopy, atomic force microscopy (AFM) and electric conductivity measurements. A simple method of synthesis of donor– acceptor complexes has been performed by subsequent deposition of C60 fullerene and tetraphenylporphyrin (H2TPP) thin films, using physical vapor deposition (PVD) on a (100) silicon substrate. UV-Vis spectra showed that the interaction of π-orbitals leads to a more ordering for the dipole moments arrangement and the π-orbitals overlapping between C60 and H2TPP molecules. Besides, Raman spectra presented intensity changes at 960 and 1000 cm-1, both related to the vibration of the pyrrole ring and the rocking of the H on the C atoms within the macrocycle. Therefore, it can be expected that the interface C60-H2TPP should have a main role in the electric response of the multilayer films. The measurements of surface conductivity indicated that interface has specific contribution, and the value of surface conductivity is enhanced by charge delocalization mechanisms occur by π–π stacking interactions. It was found that the transversal conductivity of 3-layer films was enhanced by a factor of 4 in comparison to 2-layer film, due to charge transfer mechanisms occur in the junctions that could extend the diffusion length of the charge carriers. Finally, the interface generated between C60 and H2TPP films, without any linking molecule, enhance charge transport mechanism through the films.

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Ding, Zijing, and Teck Neng Wong. "Electrohydrodynamic instability of miscible core–annular flows with electrical conductivity stratification." Journal of Fluid Mechanics 764 (January 8, 2015): 488–512. http://dx.doi.org/10.1017/jfm.2014.720.

Повний текст джерела

Анотація:

AbstractThis paper investigates the electrohydrodynamical instability of two miscible flows in a micro-pipe subject to an axial electric field. There is an electrical conductivity stratification between the two layers. A weak shear flow arises from a constant axial pressure gradient. The three-dimensional linear stability analysis is studied under the assumption of a quasi-steady state. The influences of the conductivity ratio ${\it\eta}$, the interface location $a$, the interface thickness ${\it\delta}$, the Reynolds number $\mathit{Re}$ and the Schmidt number $\mathit{Sc}$ on the linear stability of the flows are investigated. The flow becomes more unstable for a larger conductivity contrast. When the conductivity in the inner layer is larger, the critical unstable mode can be dominated by either the corkscrew mode (the azimuthal wavenumber $m=1$) or the axisymmetric mode ($m=0$), which is dependent on the interface location $a$. It is observed that, when the interface is proximal to pipe’s wall, the critical unstable mode shifts from the corkscrew mode to the axisymmetric mode. When the conductivity is larger in the outer layer, the instability is dominated by the axisymmetric mode. A detailed parametric study shows that the flow is least stable when the interface between the two liquids is located at approximately $a=0.3$ and $a=0.2$ for conductivity ratios of ${\it\eta}=0.5$ and ${\it\eta}=2$ respectively. The flow becomes more stable as the interface becomes thicker, and the shear flow and ionic diffusion are found to have a stabilizing effect due to the enhancement of dissipation mechanisms.

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Jia, S. Q., and F. Yang. "High thermal conductive copper/diamond composites: state of the art." Journal of Materials Science 56, no. 3 (October 20, 2020): 2241–74. http://dx.doi.org/10.1007/s10853-020-05443-3.

Повний текст джерела

Анотація:

Abstract Copper/diamond composites have drawn lots of attention in the last few decades, due to its potential high thermal conductivity and promising applications in high-power electronic devices. However, the bottlenecks for their practical application are high manufacturing/machining cost and uncontrollable thermal performance affected by the interface characteristics, and the interface thermal conductance mechanisms are still unclear. In this paper, we reviewed the recent research works carried out on this topic, and this primarily includes (1) evaluating the commonly acknowledged principles for acquiring high thermal conductivity of copper/diamond composites that are produced by different processing methods; (2) addressing the factors that influence the thermal conductivity of copper/diamond composites; and (3) elaborating the interface thermal conductance problem to increase the understanding of thermal transferring mechanisms in the boundary area and provide necessary guidance for future designing the composite interface structure. The links between the composite’s interface thermal conductance and thermal conductivity, which are built quantitatively via the developed models, were also reviewed in the last part.

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Li, Jia Nian, Yan Ma, Rui Feng, and Hui Na Ni. "Design of a Real-Time Detector for Solution Conductivity Based on Conductivity Electrode." Advanced Materials Research 986-987 (July 2014): 1477–80. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.1477.

Повний текст джерела

Анотація:

In order to realize real-time detecting for solution conductivity, an on-line detector powered with 9V battery was developed. The detector consists of conductivity electrode, excitation signal generating circuit, RMS detecting circuit, MSP430F2132 microcontroller, DS18B20 temperature sensor, HT1621 displayer and SPI interface. The solution conductivity was measured according to the principle that the electrode’s output resistance varying with conductive ions concentration of the solution, the measured results could be displayed on HT1621 and be sent to other controllers through SPI interface. An optimum excitation signal that a square wave signal (the amplitude was ±3.5V, and the frequency was 1.8 kHz) had been determined by experiments, to minimize polarization effect of the conductivity electrode. Verification test had been performed for the detector, the tested results showed that maximum relative error of the detector was 2.94%, could meet the requirement of practical application.

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Yakovkin, I. N. "Surface and Interface Bands of the CdTe–HgTe–CdTe Heterostructure: Evidence of Metallicity." Ukrainian Journal of Physics 66, no. 7 (August 4, 2021): 630. http://dx.doi.org/10.15407/ujpe66.7.630.

Повний текст джерела

Анотація:

Performed full-relativistic DFT calculations have demonstrated that thin HgTe layers are metallic and, with increasing thickness, do not become insulators – either ordinary band insulators or topological insulators. The variations of the potential at the CdTe–HgTe interfaces are found to be negligible in comparison with those at the terminating surfaces of the CdTe–HgTe–CdTe films, so that the interfaces in fact do not form any potential well. It is shown that the interface-related bands of the CdTe–HgTe–CdTe films are situated well below EF, so that a dominant input into the density of states at EF and, therefore, to the conductivity is provided not by the interface states, but by the surface bands of the net layered system. It is reasonable therefore to consider an alternative interpretation of the reported thickness dependence of the conductivity of the system, such as the possible surface segregation of components or unavoidable contaminations, which seems much more realistic than the interpretation based on involving topological insulators and topologically protected surface states.

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Li, Quan, Hongyi Pan, Wenjun Li, Yi Wang, Junyang Wang, Jieyun Zheng, Xiqian Yu, Hong Li, and Liquan Chen. "Homogeneous Interface Conductivity for Lithium Dendrite-Free Anode." ACS Energy Letters 3, no. 9 (August 28, 2018): 2259–66. http://dx.doi.org/10.1021/acsenergylett.8b01244.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Li, Xiujun, and Gerard C. M. Meijer. "A high-performance interface for grounded conductivity sensors." Measurement Science and Technology 19, no. 11 (September 17, 2008): 115202. http://dx.doi.org/10.1088/0957-0233/19/11/115202.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Desai, Anand, Sanket Mahajan, Ganesh Subbarayan, Wayne Jones, James Geer, and Bahgat Sammakia. "A Numerical Study of Transport in a Thermal Interface Material Enhanced With Carbon Nanotubes." Journal of Electronic Packaging 128, no. 1 (May 10, 2005): 92–97. http://dx.doi.org/10.1115/1.2161231.

Повний текст джерела

Анотація:

Power dissipation in electronic devices is projected to increase over the next 10years to the range of 150-250W per chip for high performance applications. One of the primary obstacles to the thermal management of devices operating at such high powers is the thermal resistance between the device and the heat spreader or heat sink that it is attached to. Typically the in situ thermal conductivity of interface materials is in the range of 1-4W∕mK, even though the bulk thermal conductivity of the material may be significantly higher. In an attempt to improve the effective in situ thermal conductivity of interface materials nanoparticles and nanotubes are being considered as a possible addition to such interfaces. This paper presents the results of a numerical study of transport in a thermal interface material that is enhanced with carbon nanotubes. The results from the numerical solution are in excellent agreement with an analytical model (Desai, A., Geer, J., and Sammakia, B., “Models of Steady Heat Conduction in Multiple Cylindrical Domains,” J. Electron. Packaging (to be published)) of the same geometry. Wide ranges of parametric studies were conducted to examine the effects of the thermal conductivity of the different materials, the geometry, and the size of the nanotubes. An estimate of the effective thermal conductivity of the carbon nanotubes was used, obtained from a molecular dynamics analysis (Mahajan, S., Subbarayan, G., Sammakia, B. G., and Jones, W., 2003, Proceedings of the 2003 ASME International Mechanical Engineering Congress and Exposition, Washington, D.C., Nov. 15–21). The numerical analysis was used to estimate the impact of imperfections in the nanotubes upon the overall system performance. Overall the nanotubes are found to significantly improve the thermal performance of the thermal interface material. The results show that varying the diameter of the nanotube and the percentage of area occupied by the nanotubes does not have any significant effect on the total temperature drop.

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Babenko, D. D., A. S. Dmitriev, and I. A. Mikhailova. "Active thermal interface graphene nanocomposites for thermal control of electronic and power devices." Journal of Physics: Conference Series 2150, no. 1 (January 1, 2022): 012008. http://dx.doi.org/10.1088/1742-6596/2150/1/012008.

Повний текст джерела

Анотація:

Abstract New experimental and calculated data are presented for active thermal interface materials, in which heat is removed not only due to high thermal conductivity, but also due to the evaporation of liquids, for example, water, inside a nanoporous graphene structure. It is shown that such active thermal interfaces may be new systems of active thermal control.

Стилі APA, Harvard, Vancouver, ISO та ін.

36

WANG, Y. R., J. A. KUBBY, and W. J. GREENE. "THIN FILM ELECTRON INTERFEROMETRY." Modern Physics Letters B 05, no. 21 (September 10, 1991): 1387–405. http://dx.doi.org/10.1142/s0217984991001696.

Повний текст джерела

Анотація:

Electron transport through thin overlayers of tin grown on a silicon substrate, and stacking-fault contrast in topographic and conductivity images of Si (111) – 7 × 7 are investigated. Resonances that depend on structural integrity of the overlayer are observed in the conductivity images, and are interpreted as consequences of electron standing-wave formation within the overlayer. The experimental spectra are analyzed using a one-dimensional model which has scattering potentials located at the sample surface and at the overlayer-substrate interface. The agreement between experiment and theory demonstrates that electron-standing wave spectra, in conjunction with bias-dependent topographic and conductivity images, are useful for probing details of buried interfaces formed by surface reconstruction and in heteroepitaxial growth.

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Banerjee, Soumik, and Aniruddha Mukund Dive. "(Invited) Ion Conduction and Interface Stability of Sulfide Based Solid State Electrolytes – an Atomistic Perspective." ECS Meeting Abstracts MA2022-01, no. 38 (July 7, 2022): 1662. http://dx.doi.org/10.1149/ma2022-01381662mtgabs.

Повний текст джерела

Анотація:

All-solid-state batteries are promising in terms of safety as well as high energy density compared to the conventional organic liquid-based lithium batteries. However, the characteristic low ionic conductivity of solid-state electrolytes is a major challenge towards commercialization of solid-state sodium ion batteries. Sulfide-based electrolytes especially in amorphous form have been reported as promising solid electrolytes owing to their relatively high ionic conductivity at room temperature. However, a fundamental understanding of the local structure of these amorphous electrolytes and its subsequent impact on the ion transport could be instrumental in establishing guidelines for designing novel solid electrolytes. In the present work, we utilize first principles and classical atomistic simulations to characterize the local structure and investigate the ion transport in amorphous sulfide electrolytes. We selected sodium thiosilicate [xNa2S – (1-x) SiS2] and sodium thiophosphate [xNa2S – (1-x) P2S5] based electrolytes as a model system wherein we characterized the local structure, ion conduction mechanism and ultimately calculated the ionic conductivity of these electrolytes. We utilized experimental X-ray and neutron scattering data for model validation. Our theoretical calculations provide fundamental insights into ion conduction mechanisms as well as correlate ionic conductivity with electrolyte structure and composition. Along with ionic conductivity, interfacial stability is extremely important factor influencing the overall performance of solid-state batteries. Interfacial instability with sulfide electrolytes is detrimental to Li-ion transport, leading to poor cycling performance. Inherent thermodynamic instability of sulfide-based solid electrolytes drives the chemical reaction across the interface leading to formation of undesired secondary phases. The secondary phases are formed dynamically during the cycling and therefore a careful investigation into the dynamics at the electrolyte-cathode interfaces is crucial. To generate fundamental understanding of the interface stability, we utilized ab initio molecular dynamics (AIMD) simulations to carefully investigate the dynamics of secondary phase formation across the Li3PS4 | LiCoO2 interfaces. High-resolution microscopy and spectroscopy studies were used to complement the the first principles simulations methods and unravel the interphases formed under different cycling conditions. These calculations provide crucial insights into formation of secondary phases across the interface, which could be leveraged to evaluate possible avenues to inhibit formation of such undesirable secondary phases.

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Patelka, Maciej, Sho Ikeda, Koji Sasaki, Hiroki Myodo, and Nortisuka Mizumura. "Development of High Thermally Conductive Die Attach for TIM Applications." International Symposium on Microelectronics 2019, no. 1 (October 1, 2019): 000312–15. http://dx.doi.org/10.4071/2380-4505-2019.1.000312.

Повний текст джерела

Анотація:

Abstract High power semiconductor applications require a Thermal Interface Die Attach Material with high thermal conductivity to efficiently release the heat generated from these devices. Current Thermal Interface Material solutions such as thermal grease, thermal pads and silicones have been industry standards, however may fall short in performance for high temperature or high-power applications. This presentation will focus on development of a cutting-edge Die Attach Solution for Thermal Interface Management, focusing on Fusion Type epoxy-based Ag adhesive with an extremally low Storage Modulus and the Thermal Conductivity reaching up to 30W/mK, and also Very Low Modulus, Low-Temperature Pressureless Sintered Silver Die Attach with the Thermal Conductivity of 70W/mK.

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Patelka, Maciej, Sho Ikeda, Koji Sasaki, Hiroki Myodo, and Nortisuka Mizumura. "Development of High Thermally Conductive Die Attach for TIM Applications." Journal of Microelectronics and Electronic Packaging 17, no. 3 (July 1, 2020): 106–9. http://dx.doi.org/10.4071/imaps.1125402.

Повний текст джерела

Анотація:

Abstract High-power semiconductor applications require a thermal interface die attach material with high thermal conductivity to efficiently release the heat generated from these devices. Current thermal interface material solutions such as thermal grease, thermal pads, and silicones have been industry standards, however may fall short in performance for high-temperature or high-power applications. This article focuses on development of a cutting-edge die attach solution for thermal interface management, focusing on fusion-type epoxy-based Ag adhesive with an extremely low storage modulus and the thermal conductivity reaching up to 30 W/mK, and also very low-modulus, low-temperature pressureless sintering silver die attach with a thermal conductivity of 70 W/mK.

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Li, Guo, Yanghui Wang, Huihao Zhu, Yulu Ma, Huajian Ji, Yu Wang, Tao Chen, and Linsheng Xie. "The Establishment of Thermal Conductivity Model for Linear Low-Density Polyethylene/Alumina Composites Considering the Interface Thermal Resistance." Polymers 14, no. 5 (March 5, 2022): 1040. http://dx.doi.org/10.3390/polym14051040.

Повний текст джерела

Анотація:

An optimized thermal conductivity model of spherical particle-filled polymer composites considering the influence of interface layer was established based on the classic series and parallel models. ANSYS software was used to simulate the thermal transfer process. Meanwhile, linear low-density polyethylene/alumina (LLDPE/Al2O3) composites with different volume fractions and Al2O3 particle sizes were prepared with the continuous mixer, and the effects of Al2O3 particle size and volume fraction on the thermal conductivity of the composites were discussed. Finally, the test result of the thermal conductivity was analyzed and compared with ANSYS simulations and the model prediction. The results proved that the thermal conductivity model considering the influence of the interface layer could predict the thermal conductivity of LLDPE/Al2O3 composites more precisely.

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Wu, Shuang, Jifen Wang, Huaqing Xie, and Zhixiong Guo. "Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures." Energies 13, no. 21 (November 9, 2020): 5851. http://dx.doi.org/10.3390/en13215851.

Повний текст джерела

Анотація:

The thermal conductivity and interface thermal conductance of graphene stacked MoS2 (graphene/MoS2) van der Waals heterostructure were studied by the first principles and molecular dynamics (MD) simulations. Firstly, two different heterostructures were established and optimized by VASP. Subsequently, we obtained the thermal conductivity (K) and interfacial thermal conductance (G) via MD simulations. The predicted Κ of monolayer graphene and monolayer MoS2 reached 1458.7 W/m K and 55.27 W/m K, respectively. The thermal conductance across the graphene/MoS2 interface was calculated to be 8.95 MW/m2 K at 300 K. The G increases with temperature and the interface coupling strength. Finally, the phonon spectra and phonon density of state were obtained to analyze the changing mechanism of thermal conductivity and thermal conductance.

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Che, Q. L., X. K. Chen, Y. Q. Ji, Y. W. Li, L. X. Wang, S. Z. Cao, Y. G. Jiang, and Z. Wang. "Effect of Coating on the Thermal Conductivities of Diamond/Cu Composites Prepared by Spark Plasma Sintering (SPS)." Applied Mechanics and Materials 722 (December 2014): 25–29. http://dx.doi.org/10.4028/www.scientific.net/amm.722.25.

Повний текст джерела

Анотація:

The carbide forming is proposed to improve interfacial bonding between diamond particles and copper-matrix for diamond/copper composites. The volume fraction of diamond and minor titanium are optimized. The microstructures, thermal properties, interface reaction production and its effect of minor titanium on the properties of the composites are investigated. The results show that the bonding force and thermal conductivity of the diamond/Cu-Ti alloys composites is much weaker and lower than that of the coated-diamond/Cu. the thermal conductivity of coated-60 vol. % diamond/Cu composites is 618 W/m K which is 80 % of the theoretical prediction value. The high thermal conductivity has been achieved by forming the titanium carbide at diamond/copper interface to gain a good interface.

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Ioannidis, Thanos, Tatjana Gric, and Edik Rafailov. "The Study of the Surface Plasmon Polaritons at the Interface Separating Nanocomposite and Hypercrystal." Applied Sciences 11, no. 11 (June 5, 2021): 5255. http://dx.doi.org/10.3390/app11115255.

Повний текст джерела

Анотація:

Surface plasmon polaritons (SPPs) propagating at the interfaces of composite media possess a number of fascinating properties not emerging in case of conventional SPPs, i.e., at metal-dielectric boundaries. We propose here a helpful algorithm giving rise for investigation of basic features of complex conductivity dependent SPPs at the interface separating nanocomposite and hypercrystal. The main goal of the work is to investigate dispersion of the SPPs propagating at the boundary separating two different media. Aiming to achieve the aforementioned goal that the effective Maxwell Garnett model is used. It is demonstrated that the SPPs dispersive properties are dramatically affected by the material conductivity. Correspondingly, the filling ratio of the nanoparticles in the composite and their dielectric properties also allow one to engineer characteristics of the SPPs. Having a deep insight into the conductivity dependent functions, we concluded, on their behavior for the case of hyperbolic regime and Dyakonov surface waves case. Our model gives rise for studying features of surface waves in the complex conductivity plane and provides more options to tune the fundamental features of SPPs at the boundaries correlated with composite media.

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Chen, Jingjing, Xiangnan Chen, Fanbin Meng, Dan Li, Xin Tian, Zeyong Wang, and Zuowan Zhou. "Super-high thermal conductivity of polyamide-6/graphene-graphene oxide composites through in situ polymerization." High Performance Polymers 29, no. 5 (June 22, 2016): 585–94. http://dx.doi.org/10.1177/0954008316655861.

Повний текст джерела

Анотація:

Graphene is often used to improve the thermal conductivity of polymers but usually with high amount. The key factor that limits the thermal conductivity is graphene agglomeration as well as the incompatible interface between graphene and polymer. Here, we report super-high thermal conductivity of polyamide-6 (PA6) composites achieved by adding small amounts of graphene oxide (GO)-stabilized graphene dispersions (graphene-GO). The introduction of GO not only acts as an effective dispersant for graphene due to the non-covalent π-stacking interactions but also participates in PA6 polymerization. Therefore, the issues associated with graphene dispersion in PA6 can be resolved and the interface adhesion enhanced by adding small amounts of graphene-GO. Furthermore, this approach reduces the tendency for decreased crystallinity. All these factors enhance the formation of heat conducting pathways among the graphene sheets. Thus, compared with graphene, graphene-GO enhances thermal conductivity at lower filler loading levels by enhancing graphene dispersion and interface adhesion.

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Tan, Feihu, Hua An, Ning Li, Jun Du, and Zhengchun Peng. "Stabilization of Li0.33La0.55TiO3 Solid Electrolyte Interphase Layer and Enhancement of Cycling Performance of LiNi0.5Co0.3Mn0.2O2 Battery Cathode with Buffer Layer." Nanomaterials 11, no. 4 (April 12, 2021): 989. http://dx.doi.org/10.3390/nano11040989.

Повний текст джерела

Анотація:

All-solid-state batteries (ASSBs) are attractive for energy storage, mainly because introducing solid-state electrolytes significantly improves the battery performance in terms of safety, energy density, process compatibility, etc., compared with liquid electrolytes. However, the ionic conductivity of the solid-state electrolyte and the interface between the electrolyte and the electrode are two key factors that limit the performance of ASSBs. In this work, we investigated the structure of a Li0.33La0.55TiO3 (LLTO) thin-film solid electrolyte and the influence of different interfaces between LLTO electrolytes and electrodes on battery performance. The maximum ionic conductivity of the LLTO was 7.78 × 10−5 S/cm. Introducing a buffer layer could drastically improve the battery charging and discharging performance and cycle stability. Amorphous SiO2 allowed good physical contact with the electrode and the electrolyte, reduced the interface resistance, and improved the rate characteristics of the battery. The battery with the optimized interface could achieve 30C current output, and its capacity was 27.7% of the initial state after 1000 cycles. We achieved excellent performance and high stability by applying the dense amorphous SiO2 buffer layer, which indicates a promising strategy for the development of ASSBs.

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Kim, Woochang, Chihyun Kim, Wonseok Lee, Jinsung Park, and Duckjong Kim. "Innocuous, Highly Conductive, and Affordable Thermal Interface Material with Copper-Based Multi-Dimensional Filler Design." Biomolecules 11, no. 2 (January 20, 2021): 132. http://dx.doi.org/10.3390/biom11020132.

Повний текст джерела

Анотація:

Thermal interface materials (TIMs), typically composed of a polymer matrix with good wetting properties and thermally conductive fillers, are applied to the interfaces of mating components to reduce the interfacial thermal resistance. As a filler material, silver has been extensively studied because of its high intrinsic thermal conductivity. However, the high cost of silver and its toxicity has hindered the wide application of silver-based TIMs. Copper is an earth-abundant element and essential micronutrient for humans. In this paper, we present a copper-based multi-dimensional filler composed of three-dimensional microscale copper flakes, one-dimensional multi-walled carbon nanotubes (MWCNTs), and zero-dimensional copper nanoparticles (Cu NPs) to create a safe and low-cost TIM with a high thermal conductivity. Cu NPs synthesized by microwave irradiation of a precursor solution were bound to MWCNTs and mixed with copper flakes and polyimide matrix to obtain a TIM paste, which was stable even in a high-temperature environment. The cross-plane thermal conductivity of the copper-based TIM was 36 W/m/K. Owing to its high thermal conductivity and low cost, the copper-based TIM could be an industrially useful heat-dissipating material in the future.

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Parfenov, Oleg E., Dmitry V. Averyanov, Andrey M. Tokmachev, Igor A. Karateev, Alexander N. Taldenkov, Oleg A. Kondratev, and Vyacheslav G. Storchak. "Interface-Induced Anomalous Hall Conductivity in a Confined Metal." ACS Applied Materials & Interfaces 10, no. 41 (September 24, 2018): 35589–98. http://dx.doi.org/10.1021/acsami.8b10962.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Moyer, Curt A. "Effective conductivity for interface scattering in metal-matrix composites." Physical Review B 47, no. 16 (April 15, 1993): 10079–82. http://dx.doi.org/10.1103/physrevb.47.10079.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Kosacki, Igor, Christopher M. Rouleau, Paul F. Becher, James Bentley, and Douglas H. Lowndes. "Surface/Interface-Related Conductivity in Nanometer Thick YSZ Films." Electrochemical and Solid-State Letters 7, no. 12 (2004): A459. http://dx.doi.org/10.1149/1.1809556.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Garrido, Jose A., Andreas Härtl, Markus Dankerl, Andreas Reitinger, Martin Eickhoff, Andreas Helwig, Gerhard Müller, and Martin Stutzmann. "The Surface Conductivity at the Diamond/Aqueous Electrolyte Interface." Journal of the American Chemical Society 130, no. 12 (March 2008): 4177–81. http://dx.doi.org/10.1021/ja078207g.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Статті в журналах з теми "Interface conductivity"

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями