Статті в журналах з теми "Interface charge mobility"
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Зайцева, Э. Г., О. В. Наумова та Б. И. Фомин. "Профилирование компонент подвижности вблизи гетерограниц тонких пленок кремния". Физика и техника полупроводников 54, № 2 (2020): 124. http://dx.doi.org/10.21883/ftp.2020.02.48891.9272.
Повний текст джерелаPérez-Tomás, Amador, Michael R. Jennings, Philip A. Mawby, James A. Covington, Phillippe Godignon, José Millan, and Narcis Mestres. "SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps." Materials Science Forum 556-557 (September 2007): 835–38. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.835.
Повний текст джерелаSchrimpf, R. D., K. F. Galloway, and P. J. Wahle. "Interface and oxide charge effects on DMOS channel mobility." Electronics Letters 25, no. 17 (1989): 1156. http://dx.doi.org/10.1049/el:19890776.
Повний текст джерелаNoll, Stefan, Martin Rambach, Michael Grieb, Dick Scholten, Anton J. Bauer, and Lothar Frey. "Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors." Materials Science Forum 778-780 (February 2014): 702–5. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.702.
Повний текст джерелаFang, Fang, Junsheng Wu, Yanwen Zhou, and Zhuo Zhao. "Interface construction for charge transportation of ZnO/graphene multilayer films." Functional Materials Letters 14, no. 06 (August 2021): 2150027. http://dx.doi.org/10.1142/s1793604721500272.
Повний текст джерелаRao, R. Ramakrishna, Kevin Matocha, and Vinayak Tilak. "Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs." Materials Science Forum 615-617 (March 2009): 797–800. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.797.
Повний текст джерелаButko A. V., Butko V. Y., and Kumzerov Y. A. "Dependence of charge carrier mobility in hybrid nanostructures at the interface of graphene and molecular ions on their charge density." Physics of the Solid State 63, no. 13 (2022): 1820. http://dx.doi.org/10.21883/pss.2022.13.52327.141.
Повний текст джерелаCao, Cheng, Shengru Chen, Jun Deng, Gang Li, Qinghua Zhang, Lin Gu, Tian-Ping Ying, Er-Jia Guo, Jian-Gang Guo, and Xiaolong Chen. "Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface." Chinese Physics Letters 39, no. 4 (April 1, 2022): 047301. http://dx.doi.org/10.1088/0256-307x/39/4/047301.
Повний текст джерелаRescher, Gerald, Gregor Pobegen, Thomas Aichinger, and Tibor Grasser. "Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique." Materials Science Forum 897 (May 2017): 143–46. http://dx.doi.org/10.4028/www.scientific.net/msf.897.143.
Повний текст джерелаJia, Beibei, Jun Zhou, Jiaxin Chen, Zixuan Zhang, Yang Wang, Zepeng Lv, and Kai Wu. "Interfacial Insight of Charge Transport in BaTiO3/Epoxy Composites." Nanomaterials 13, no. 3 (January 19, 2023): 406. http://dx.doi.org/10.3390/nano13030406.
Повний текст джерелаFuruhashi, Masayuki, Toshikazu Tanioka, Masayuki Imaizumi, Naruhisa Miura, and Satoshi Yamakawa. "Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET." Materials Science Forum 778-780 (February 2014): 985–88. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.985.
Повний текст джерелаBai, Ziheng, Ying Zhao, Jiawei Wang, Dongyang Liu, Yu Shan, Zean Guo, Yuan Kai, et al. "High mobility achieved in InGaZnO TFT with vacuum-gap as insulating layer." Applied Physics Letters 121, no. 26 (December 26, 2022): 263502. http://dx.doi.org/10.1063/5.0127613.
Повний текст джерелаPark, Youngseo, Jiyeon Ma, Geonwook Yoo та Junseok Heo. "Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors". Nanomaterials 11, № 2 (16 лютого 2021): 494. http://dx.doi.org/10.3390/nano11020494.
Повний текст джерелаHavare, Ali Kemal. "The Effect of Interface Modification by PEDOT: PSS on the Hole Mobility of the LEC Device." International Journal on Organic Electronics 11, no. 1 (February 28, 2022): 1–7. http://dx.doi.org/10.5121/ijoe.2022.11101.
Повний текст джерелаTilak, Vinayak, Kevin Matocha, Greg Dunne, Fredrik Allerstam, and Einar Ö. Sveinbjörnsson. "Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique." Materials Science Forum 600-603 (September 2008): 687–90. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.687.
Повний текст джерелаЕnisherlova, K. L., L. A. Seidman, and S. Yu Bogolyubova. "Effect of treatment in nitrogen plasma on the electrical parameters of AlGaN/GaN heterostructures." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 25, no. 3 (September 28, 2022): 227–37. http://dx.doi.org/10.17073/1609-3577-2022-3-227-237.
Повний текст джерелаStojadinovic, Ninoslav, Ivica Manic, Vojkan Davidovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Snezana Golubovic, and S. Dimitrijev. "Effects of gate bias stressing in power vdmosfets." Serbian Journal of Electrical Engineering 1, no. 1 (2003): 89–101. http://dx.doi.org/10.2298/sjee0301089s.
Повний текст джерелаLuczak, Adam, Angélina Torres Ruiz, Simon Pascal, Adrian Adamski, Jarosław Jung, Beata Luszczynska, and Olivier Siri. "The Quinonoid Zwitterion Interlayer for the Improvement of Charge Carrier Mobility in Organic Field-Effect Transistors." Polymers 13, no. 10 (May 13, 2021): 1567. http://dx.doi.org/10.3390/polym13101567.
Повний текст джерелаMatyushov, Dmitry V. "Electrophoretic mobility without charge driven by polarisation of the nanoparticle–water interface." Molecular Physics 112, no. 15 (February 5, 2014): 2029–39. http://dx.doi.org/10.1080/00268976.2014.882521.
Повний текст джерелаDiouf, Baye Boucar, Woo Sik Jeon, Jung Soo Park, Jin Woo Choi, Young Hoon Son, Dae Chul Lim, Yoo Jin Doh, and Jang Hyuk Kwon. "High hole mobility through charge recombination interface in organic light-emitting diodes." Synthetic Metals 161, no. 19-20 (October 2011): 2087–91. http://dx.doi.org/10.1016/j.synthmet.2011.07.025.
Повний текст джерелаFiorenza, Patrick, Corrado Bongiorno, A. Messina, Mario Saggio, Filippo Giannazzo, and Fabrizio Roccaforte. "Charge Trapping Mechanisms in Nitridated SiO<sub>2</sub>/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry." Materials Science Forum 1062 (May 31, 2022): 160–64. http://dx.doi.org/10.4028/p-u08hm8.
Повний текст джерелаHatakeyama, Tetsuo, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, and Shinsuke Harada. "Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs." Journal of Applied Physics 131, no. 14 (April 14, 2022): 145701. http://dx.doi.org/10.1063/5.0086172.
Повний текст джерелаZupac, D., K. F. Galloway, P. Khosropour, S. R. Anderson, R. D. Schrimpf, and P. Calvel. "Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs." IEEE Transactions on Nuclear Science 40, no. 6 (1993): 1307–15. http://dx.doi.org/10.1109/23.273537.
Повний текст джерелаGámiz, F., J. Banqueri, J. E. Carceller, and J. A. López-Villanueva. "Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs." Solid-State Electronics 38, no. 3 (March 1995): 611–14. http://dx.doi.org/10.1016/0038-1101(94)00129-4.
Повний текст джерелаStrenger, Christian, Viktoryia Uhnevionak, Vincent Mortet, Guillermo Ortiz, Tobias Erlbacher, Alexander Burenkov, A. J. Bauer, et al. "Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs." Materials Science Forum 778-780 (February 2014): 583–86. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.583.
Повний текст джерелаLeonov, Vladimir, and Chris Van Hoof. "Multilayer Inorganic Electrets with SiO2 and Si3N4 Layers for Applications on Heated Machinery." Smart Materials Research 2012 (May 20, 2012): 1–9. http://dx.doi.org/10.1155/2012/904168.
Повний текст джерелаPotbhare, Siddharth, Neil Goldsman, Gary Pennington, Aivars J. Lelis, and J. M. McGarrity. "Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs." Materials Science Forum 556-557 (September 2007): 847–50. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.847.
Повний текст джерелаBoulanger, Nicolas, Victor Yu, Michael Hilke, Michael F. Toney, and David R. Barbero. "Graphene induced electrical percolation enables more efficient charge transport at a hybrid organic semiconductor/graphene interface." Physical Chemistry Chemical Physics 20, no. 6 (2018): 4422–28. http://dx.doi.org/10.1039/c7cp07871d.
Повний текст джерелаGHIBAUDO, G., J. JOMAAH, and F. BALESTRA. "IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S." Fluctuation and Noise Letters 06, no. 04 (December 2006): L427—L432. http://dx.doi.org/10.1142/s0219477506003586.
Повний текст джерелаKabir, Muhammad Salahuddin, Eli Powell, Robert G. Manley, and Karl D. Hirschman. "Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs." ECS Transactions 109, no. 6 (September 30, 2022): 25–32. http://dx.doi.org/10.1149/10906.0025ecst.
Повний текст джерелаLiu, Chieh-I., Pengjie Wang, Jian Mi, Hsin-Yen Lee, Chi Zhang, Xi Lin, Chiashain Chuang, Nobuyuki Aoki, Randolph E. Elmquist, and Chi-Te Liang. "Charge Trapping in Monolayer and Multilayer Epitaxial Graphene." Journal of Nanomaterials 2016 (2016): 1–4. http://dx.doi.org/10.1155/2016/7372812.
Повний текст джерелаLee, Gyujeong, Hea-Lim Park, Sin-Hyung Lee, Min-Hoi Kim, and Sin-Doo Lee. "Enhancement of Charge Injection in Organic Field-Effect Transistors Through Semiconducting Organic Buffer Layer." Journal of Nanoscience and Nanotechnology 21, no. 7 (July 1, 2021): 3923–28. http://dx.doi.org/10.1166/jnn.2021.19242.
Повний текст джерелаJoshi, R. P. "Temperature‐dependent electron mobility in GaN: Effects of space charge and interface roughness scattering." Applied Physics Letters 64, no. 2 (January 10, 1994): 223–25. http://dx.doi.org/10.1063/1.111511.
Повний текст джерелаJi, Zhigang, Jian Fu Zhang, Wei Dong Zhang, Ben Kaczer, Stefan De Gendt, and Guido Groeseneken. "Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs." IEEE Transactions on Electron Devices 59, no. 3 (March 2012): 783–90. http://dx.doi.org/10.1109/ted.2011.2177839.
Повний текст джерелаSumets, M. "Charge transport in LiNbO3-based heterostructures." Journal of Nonlinear Optical Physics & Materials 26, no. 01 (March 2017): 1750011. http://dx.doi.org/10.1142/s0218863517500114.
Повний текст джерелаButko A.V., Butko V.Y., and Kumzerov Y.A. "Optimization of graphene transistor sensors based on quantum capacitance and charge carrier mobility analysis." Physics of the Solid State 64, no. 12 (2022): 2041. http://dx.doi.org/10.21883/pss.2022.12.54405.441.
Повний текст джерелаAhyi, Ayayi Claude, S. R. Wang, and John R. Williams. "Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs." Materials Science Forum 527-529 (October 2006): 1063–66. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1063.
Повний текст джерелаParfenov P. S., Bukhryakov N. V., Onishchuk D.A., Babaev A. A., Sokolova A. V., and Litvin A. P. "Study of charge carrier mobility in PBS nanocrystal layers using field-effect transistors." Semiconductors 56, no. 2 (2022): 175. http://dx.doi.org/10.21883/sc.2022.02.53049.9734.
Повний текст джерелаHabersat, Daniel B., Aivars J. Lelis, Siddharth Potbhare, and Neil Goldsman. "Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge." Materials Science Forum 615-617 (March 2009): 769–72. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.769.
Повний текст джерелаNeagu, Eugen R., C. J. Dias, M. C. Lança, Rui Igreja, and José N. Marat-Mendes. "Medium Electric Field Electron Injection/Extraction at Metal-Dielectric Interface." Materials Science Forum 636-637 (January 2010): 437–43. http://dx.doi.org/10.4028/www.scientific.net/msf.636-637.437.
Повний текст джерелаDhar, Sarit, Suman Das, Ayayi Ahyi, and Marcelo Kuroda. "(Invited, Digital Presentation) Interface Charge Trapping and Scattering in SiC MOSFET Channels." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1317. http://dx.doi.org/10.1149/ma2022-01311317mtgabs.
Повний текст джерелаLi, Zhonglei, Jingang Su, Boxue Du, Zhaohao Hou, and Chenlei Han. "Inhibition Effect of Graphene on Space Charge Injection and Accumulation in Low-Density Polyethylene." Nanomaterials 8, no. 11 (November 20, 2018): 956. http://dx.doi.org/10.3390/nano8110956.
Повний текст джерелаBae, Geun Yeol, Jinsung Kim, Junyoung Kim, Siyoung Lee, and Eunho Lee. "MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation." Nanomaterials 11, no. 11 (October 22, 2021): 2805. http://dx.doi.org/10.3390/nano11112805.
Повний текст джерелаChatterjee, Shouvik, Shoaib Khalid, Hadass S. Inbar, Aranya Goswami, Taozhi Guo, Yu-Hao Chang, Elliot Young, et al. "Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy." Science Advances 7, no. 16 (April 2021): eabe8971. http://dx.doi.org/10.1126/sciadv.abe8971.
Повний текст джерелаRASHKEEV, S. N., D. M. FLEETWOOD, R. D. SCHRIMPF, and S. T. PANTELIDES. "HYDROGEN AT THE Si/SiO2 INTERFACE: FROM ATOMIC-SCALE CALCULATIONS TO ENGINEERING MODELS." International Journal of High Speed Electronics and Systems 14, no. 02 (June 2004): 575–80. http://dx.doi.org/10.1142/s0129156404002521.
Повний текст джерелаChambers, S. A., D. Lee, Z. Yang, Y. Huang, W. Samarakoon, H. Zhou, P. V. Sushko, et al. "Probing electronic dead layers in homoepitaxial n-SrTiO3(001) films." APL Materials 10, no. 7 (July 1, 2022): 070903. http://dx.doi.org/10.1063/5.0098500.
Повний текст джерелаKemal Havare, Ali. "Electronic Parameters of Diode Based Organometallic Semiconductor Dyes Centered Ruthenium Complexes with Active COOH Terminals." Journal of Nanoscience and Nanotechnology 21, no. 12 (December 1, 2021): 5937–44. http://dx.doi.org/10.1166/jnn.2021.19508.
Повний текст джерелаHuang, Ting, Yan Zhang, Haonan Liu, Ruiqiang Tao, Chunlai Luo, Yushan Li, Cheng Chang, Xubing Lu, Takeo Minari, and Junming Liu. "Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition." Semiconductor Science and Technology 37, no. 2 (December 16, 2021): 025005. http://dx.doi.org/10.1088/1361-6641/ac3e05.
Повний текст джерелаROMANJEK, KRUNOSLAV, GÉRARD GHIBAUDO, THOMAS ERNST та JAN A. CHROBOCZEK. "LOW FREQUENCY NOISE IN SUB-0.1μmSiGepMOSFETs, CHARACTERISATION AND MODELING". Fluctuation and Noise Letters 04, № 02 (червень 2004): L309—L318. http://dx.doi.org/10.1142/s0219477504001914.
Повний текст джерелаБутко, А. В., В. Ю. Бутко та Ю. А. Кумзеров. "Зависимость подвижности носителей заряда в гибридных наноструктурах на интерфейсе графена с молекулярными ионами от их зарядовой плотности". Физика твердого тела 63, № 11 (2021): 1960. http://dx.doi.org/10.21883/ftt.2021.11.51603.141.
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