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Статті в журналах з теми "Integrated pressure transducer"
Maralani, Ayden, Levent Beker, and Albert P. Pisano. "Toward Integrated Pressure Sensors for Temperatures up to 600°C." Journal of Microelectronics and Electronic Packaging 13, no. 4 (October 1, 2016): 163–68. http://dx.doi.org/10.4071/imaps.522.
Повний текст джерелаMaralani, Ayden, Levent Beker, and Albert P. Pisano. "Towards Integrated Sensors for Environments with Temperatures up to 600 °C." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (January 1, 2016): 000051–55. http://dx.doi.org/10.4071/2016-hitec-51.
Повний текст джерелаWang, Wenjie, Weihao Shi, Peter Thomas, and Mingsui Yang. "Design and Analysis of Two Piezoelectric Cymbal Transducers with Metal Ring and Add Mass." Sensors 19, no. 1 (January 2, 2019): 137. http://dx.doi.org/10.3390/s19010137.
Повний текст джерелаYalikun, Yaxiaer, and Yo Tanaka. "Ultra-thin glass sheet integrated transparent diaphragm pressure transducer." Sensors and Actuators A: Physical 263 (August 2017): 102–12. http://dx.doi.org/10.1016/j.sna.2017.05.047.
Повний текст джерелаTemirov, N. E., and N. N. Temirov. "Experience in clinical use of active ultrasonic handpiece with integrated pressure transducer." Modern technologies in ophtalmology, no. 5 (October 20, 2021): 99–101. http://dx.doi.org/10.25276/2312-4911-2021-5-99-101.
Повний текст джерелаKumar, Shashi, Gaddiella Diengdoh Ropmay, Pradeep Kumar Rathore, Peesapati Rangababu, and Jamil Akhtar. "Fabrication and testing of PMOS current mirror-integrated MEMS pressure transducer." Sensor Review 40, no. 2 (November 23, 2019): 141–51. http://dx.doi.org/10.1108/sr-07-2019-0182.
Повний текст джерелаMikhailenko, I. V., A. T. Orlov, and B. K. Serdega. "Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer." Semiconductors 51, no. 4 (April 2017): 498–502. http://dx.doi.org/10.1134/s1063782617040145.
Повний текст джерелаLedesma, Eyglis, Iván Zamora, Francesc Torres, Arantxa Uranga, Vassil Tzanov, Nuria Barniol, Eloi Marigó, and Mohan Soundara-Pandian. "Squared PMUT with Enhanced Pressure Sensitivities." Proceedings 2, no. 13 (November 27, 2018): 925. http://dx.doi.org/10.3390/proceedings2130925.
Повний текст джерелаHu, C. M., N. Guo, H. Du, and L. M. Xu. "Dynamic characteristics of stacked piezoelectric transducers of ultrasonic wire bonders used in integrated circuit packaging." Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science 217, no. 3 (March 1, 2003): 341–52. http://dx.doi.org/10.1243/095440603762870009.
Повний текст джерелаChen, Rui, Zhongkui Chen, Charles Wang Wai Ng, and Jian Liu. "Development of a pore gas pressure transducer used in unsaturated soils at high water content." E3S Web of Conferences 92 (2019): 02003. http://dx.doi.org/10.1051/e3sconf/20199202003.
Повний текст джерелаДисертації з теми "Integrated pressure transducer"
Vincent, David Robert. "Integrated design for an optically driven micromachined silicon pressure transducer." Thesis, University of Southampton, 1993. https://eprints.soton.ac.uk/394151/.
Повний текст джерелаМихайленко, Ігор Всеволодович. "Напівпровідникові перетворювачі механічних величин з використанням поперечних тензоефектів". Thesis, КПІ ім. Ігоря Сікорського, 2019. https://ela.kpi.ua/handle/123456789/30025.
Повний текст джерелаThe purpose of the work is to develop a physical basis for transducers of mechanical values design and technology using transverse tenso-effects. The object of the research - characteristics of transverse effects caused by induced anisotropy in Si and Ge. The subject of research are transducers of mechanical values based on the transverse tenso-effects in Si and Ge. The result of the research is the development of both MEMS integrated pressure transducers and the industrial device for measuring the pressure of liquid media. The introduction substantiates the relevance of the topic, shows the relationship with scientific programs and plans, formulates purpose and objectives of scientific research, outlines the novelty and practical significance of the results obtained, indicates the personal contribution of the applicant, provides data on the validation of the results The First chapter analyzes phenomena leading to transverse effects. Consideration given in terms of anisotropy of conductivity, which is interpreted as the non-collinearity of the vectors of electric field and current. It allows using similar formal apparatus in the analysis of various effects. In particular, the cases of anisotropy induced by deformation and magnetic field have been examined. The Second chapter is devoted to the study of discrete tenso-emf transducers. In the proposed tenso-emf transducers, problems of matching the temperature dependencies of the sensitivity and impedances of individual strain gages are virtually eliminated. The dynamic range of the non-fixed tenso-emf transducer was about 120 dB. The Third chapter contains the results of the design and study of transducers using concentration effects in Ge in combination with other physical effects. New types of mechanical transducers proposed, such as differential tenso-transistor, non-contact linear displacement sensor, threshold angle sensors, and oscillistor-effect based force sensor. The Fourth chapter is devoted to the development of an integrated pressure transducer using MEMS technology. Problems of the physical principle of sensing element operation, optimization of the elastic element topology and design of the converter as a whole, as well as a choice of optimal manufacturing technology processes, are solved here. The sensitivity of the integrated transducer with a membrane thickness of 100 μm was 0.02 1/MPa at a nominal conversion range of 1 MPa and a 100% strength margin. Tests of the manufactured series of MEMS integrated transducer showed that the additive component of the error and its change in the range 233-373 K are, respectively, 1% and 1% ... 2% of the nominal signal, which is at least an order of magnitude smaller than the corresponding parameters of a strain gauge Wheatstone bridge. The Fifth chapter describes the design and test results of devices developed on the basis of tenso-emf transducers research. Such devices, introduced for industrial use, are remote manometer transducers PDM-2 and PDMT-1. These devices are designed to measure oil and bitumen wells pressure in the range 0 ... 2.5 MPa, with a nominal output signal of 100 mV. In addition, PDMT-1 transmits information about temperature. The PDM-2 device has passed the State Testing and was recommended for serial production. The conducted studies confirm the high potential of the practical application of transverse effects in multi-valley semiconductors for the development of mechanical values sensors.
Диссертация посвящена разработке физико-технологических принципов создания и исследованию преобразователей механических величин на основе поперечных эффектов в анизотропних полупроводниках. Разработаны физические основы построения преобразователей механических величин с использованием поперечных эффектов и проведено их исследование на экспериментальных образцах. Продемонстрирована перспективность использования преобразователей на основе эффекта тензо-э.д.с. как в дискретном, так и в интегральном исполнении для создания датчиков силы и давления, работающих в диапазоне температур 233-373K. Обнаружен ряд концентрационных эффектов в германии и предложены преобразователи оригинальных конструкций, таких как дифференциальный тензотранзистор, бесконтактный линейный датчик перемещений на основе магнитоконцентрационного эффекта, пороговые датчики угла поворота и силы на основе осциллисторного эффекта с возможностью управления порогом переключения. Проведенные исследования подтверждают перспективность практического использования поперечных эффектов в многодолинных полупроводниках для создания преобразователей механических величин.
Михайленко, Ігор Всеволодович. "Напівпровідникові перетворювачі механічних величин з використанням поперечних тензоефектів". Doctoral thesis, Київ, 2019. https://ela.kpi.ua/handle/123456789/30024.
Повний текст джерелаCoraucci, Guilherme de Oliveira. "Sensor de pressão microeletronico baseado no efeito piezoresistivo transversal em silicio." [s.n.], 2008. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259037.
Повний текст джерелаDissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação
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Resumo: Apresentamos neste trabalho um sensor de pressão piezorresistivo de multiterminais totalmente compatível com o processo de fabricação CMOS, constituído de um piezoelemento sensível ao estresse mecânico disposto sobre uma membrana microfabricada. O layout deste piezoelemento permite maximizar o efeito do estresse mecânico sobre a deflexão das equipotenciais distribuídas sobre sua região ativa. Utilizamos a análise baseada no Método de Elementos Finitos no projeto da membrana, bem como na definição da disposição dos piezoelementos sobre a mesma. O sensor foi fabricado em duas tecnologias diferentes: CMOS 0,3 ?m MAS (Austria Mikro Systeme International) - disponibilizado pelo Projeto Multi-Usuário PMU-FAPESP - e CCS/Unicamp (Centro de Componentes Semicondutores da Unicamp). Realizamos a membrana, no sensor fabricado na tecnologia AMS, através de um processo de desbaste mecânico da pastilha de silício. Já para o sensor fabricado na tecnologia do CCS/Unicamp, utilizamos um aparato de corrosão química (solução de KOH) para corrosão anisotrópica do silício monocristalino e, desta forma, obtivemos uma membrana com maior qualidade. Realizamos o estudo, analítico e numérico, da dependência da tensão de saída do piezoelemento de multiterminais com relação ao estresse mecânico. Os sensores fabricados apresentaram sensibilidade proporcional ao número de contatoscorrente de entrada e pouca dependência desta sensibilidade com sua geometria para uma grande faixa de variação de suas dimensões. Na tecnologia AMS, o sensor apresentou uma sensibilidade de 0,24 mV/psi e na tecnologia CCS/Unicamp 4,8 mV/psi com linearidade máxima de aproximadamente 5,6% FSO
Abstract: This work describes a CMOS-Compatible multiterminal piezoresistive pressure sensor based on the transversal piezoresistive effect, which consists of a piezotransducer fabricated on a membrane. The layout of this piezoelement is designed in such a way that its sensitivity is improved by maximizing the effect of the mechanical stress over the equipotential lines distribution in its active region. We performed Element Finite analyses in both membrane and piezoelement designs. The sensor was fabricated using two different technologies: CMOS 0,35 ?m AMS process (Austria Mikro Systeme International) - supported by the Fapesp Multi-User Project - and CCS/Unicamp process (Center for Semiconductor Components). In the AMS process, we realized a diaphragm by reducing the thickness of the die through a mechanical polishing process. In the sensor fabricated at CCS/Unicamp process, a backside bulk micro-machining was performed by using an automated KOH chemical etching apparatus, which provides a well-controlled anisotropic etching process. The sensor sensitivity is proportional to the number of input current terminals. The sensor sensitivity dependence related to its geometry is minimized even for a wide range of the sensor layout's aspect-ratio. In the AMS process, sensor's sensitivity amounted to 0.24 mV/psi and in the CCS/Unicamp process the sensitivity amounted to 4,8 mV/psi with a maximum linearity of about 5,6% FSO
Mestrado
Eletrônica, Microeletrônica e Optoeletrônica
Mestre em Engenharia Elétrica
Camolesi, Alessandro. "Sensor de pressão microeletromecânico com fonte de referência em tensão." [s.n.], 2010. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259034.
Повний текст джерелаDissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação
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Resumo: Apresentamos neste trabalho a fabricação e a caracterização de um sensor de pressão totalmente compatível com a tecnologia CMOS. Este sensor é constituído por quatro piezoresistores, implantados e dispostos em ponte de Wheatstone. Os processos de fabricação do sensor foram todos realizados no Centro de Componentes e Semicondutores (CCS) - Unicamp. A membrana do sensor foi obtida através de um processo de desbaste mecânico do die que foi colado em uma placa de alumina. O alinhamento da colagem foi baseado em um orifício central. O sensor encapsulado apresentou sensibilidade de 0.32mV/psi. Além disso, projetamos uma fonte de referência em tensão do tipo Bandgap. Nesta fonte de referência usamos uma técnica para minimizar os gradientes de estresse mecânico, a maior fonte de não-idealidade desta fonte de referência e permitiu estudarmos a deriva térmica da sensibilidade da ponte
Abstract: We presented in this work the fabrication and the characterization of a pressure sensor totally CMOS compatible. This sensor is arranged by four p-type silicon piezoresistive implanted in a Wheatstone bridge. The fabrication processes were all performed at the Center for Components and Semiconductors (CCS) - Unicamp. The membrane was obtained by a mechanical polishing process of the die that was attached by RTV (Room Temperature Vulcanization) on an alumina substrate. The attach alignment was based on the center of the vent hole. The packaged sensor showed a sensitivity amounts to 0.32mV/psi. Also, a Bandgap voltage reference was designed. In such voltage reference uses a technical to minimize gradients such as mechanical stress, the main non-ideality source to such voltage reference and it allowed the drift thermal analysis of the bridge sensitivity
Mestrado
Eletrônica, Microeletrônica e Optoeletrônica
Mestre em Engenharia Elétrica
Частини книг з теми "Integrated pressure transducer"
Koshevoy, N. D., O. V. Zabolotnyi, I. I. Koshevaya, V. V. Muratov, and T. G. Rozhnova. "Fiber-Optic Pressure Instrument Transducers." In Integrated Computer Technologies in Mechanical Engineering, 11–23. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37618-5_2.
Повний текст джерелаChen, Xi, and Amit Lal. "Micromachined Ultrasonic Ophthalmic Microsurgical Tool with Integrated Pressure Sensor." In Transducers ’01 Eurosensors XV, 424–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_101.
Повний текст джерелаUllerich, S., W. Mokwa, G. vom Bögel, and U. Schnakenberg. "A Foldable Artificial Lens with an Integrated Transponder System for Measuring Intraocular Pressure." In Transducers ’01 Eurosensors XV, 1196–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_283.
Повний текст джерелаKasten, Klaus, Norbert Kordas, Holger Kappert, and Wilfried Mokwa. "High temperature pressure sensor with monolithically integrated CMOS readout circuit based on SIMOX technology." In Transducers ’01 Eurosensors XV, 510–13. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_121.
Повний текст джерелаТези доповідей конференцій з теми "Integrated pressure transducer"
Menini, P., G. Blasquez, P. Pons, C. Douziech, P. Favaro, and P. Dondon. "Optimization of a BiCMOS integrated transducer for self-compensated capacitive pressure sensor." In ICECS'99. Proceedings of ICECS'99. 6th IEEE International Conference on Electronics, Circuits and Systems. IEEE, 1999. http://dx.doi.org/10.1109/icecs.1999.813416.
Повний текст джерелаTutwiler, R. L., J. P. Stitt, K. K. Shung, Q. Wu, T. A. Ritter, X. Yang, and J. Sabarad. "Control Architecture for 30MHz Linear Imaging Array." In ASME 2003 Pressure Vessels and Piping Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/pvp2003-1864.
Повний текст джерелаSolar, H., A. Beriain, A. Jimenez-Irastorza, U. Alvarado, R. Berenguer, M. Ortiz de Landaluce, M. Cojocariu, and C. Martinez. "A CMOS sensor signal conditioner for an automotive pressure sensor based on a piezo-resistive bridge transducer." In 2016 Conference on Design of Circuits and Integrated Systems (DCIS). IEEE, 2016. http://dx.doi.org/10.1109/dcis.2016.7845357.
Повний текст джерелаMaas, Jürgen, Martin Griese, and Thorben Hoffstadt. "Integrated Sensor Concepts for Dielectric Elastomer Actuators." In ASME 2013 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/smasis2013-3243.
Повний текст джерелаWlodarczyk, Marek T., and David Toth. "Cylinder Head Gasket With Integrated Miniature Combustion Pressure Sensors." In ASME 2010 Internal Combustion Engine Division Fall Technical Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/icef2010-35076.
Повний текст джерелаHuang, Zhenjia (Jerry), Don Spencer, Robert Oberlies, Gracie Watts, and Wenting Xiao. "Wave Impact Experiment of a GBS Model in Large Waves." In ASME 2017 36th International Conference on Ocean, Offshore and Arctic Engineering. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/omae2017-61473.
Повний текст джерелаGallagher, Dennis G., and William D. Olstad. "Integrated Diver Display Mask (IDDM) System for Special Diving Applications." In ASME 2002 21st International Conference on Offshore Mechanics and Arctic Engineering. ASMEDC, 2002. http://dx.doi.org/10.1115/omae2002-28038.
Повний текст джерелаGentilman, Richard L., Leslie J. Bowen, Robert D. Corsaro, and Brian H. Houston. "Piezoelectric Composite Panels for Underwater Acoustic Control." In ASME 1995 Design Engineering Technical Conferences collocated with the ASME 1995 15th International Computers in Engineering Conference and the ASME 1995 9th Annual Engineering Database Symposium. American Society of Mechanical Engineers, 1995. http://dx.doi.org/10.1115/detc1995-0438.
Повний текст джерелаZhang, Yangxi, Fanrui Meng, Guandong Liu, Chengchen Gao, and Yilong Hao. "A Wafer-level pressure calibration method for integrated accelerometer and pressure sensor in TPMS application." In TRANSDUCERS 2015 - 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2015. http://dx.doi.org/10.1109/transducers.2015.7181388.
Повний текст джерелаWang, Jiachou, and Xinxin Li. "Monolithic-integrated silicon bulk-micromachined accelerometer and pressure-sensor for tire-pressure-monitoring-system (TPMS) application." In TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2011. http://dx.doi.org/10.1109/transducers.2011.5969145.
Повний текст джерела