Статті в журналах: "Integrated nanophotonic circuit"

1

Goltsman, Gregory. "Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors." EPJ Web of Conferences 190 (2018): 02004. http://dx.doi.org/10.1051/epjconf/201819002004.

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We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.

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2

Pyatkov, Felix, Svetlana Khasminskaya, Vadim Kovalyuk, Frank Hennrich, Manfred M. Kappes, Gregory N. Goltsman, Wolfram H. P. Pernice, and Ralph Krupke. "Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers." Beilstein Journal of Nanotechnology 8 (January 5, 2017): 38–44. http://dx.doi.org/10.3762/bjnano.8.5.

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Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.

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3

Shiue, Ren-Jye, Dmitri K. Efetov, Gabriele Grosso, Cheng Peng, Kin Chung Fong, and Dirk Englund. "Active 2D materials for on-chip nanophotonics and quantum optics." Nanophotonics 6, no. 6 (March 15, 2017): 1329–42. http://dx.doi.org/10.1515/nanoph-2016-0172.

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AbstractTwo-dimensional materials have emerged as promising candidates to augment existing optical networks for metrology, sensing, and telecommunication, both in the classical and quantum mechanical regimes. Here, we review the development of several on-chip photonic components ranging from electro-optic modulators, photodetectors, bolometers, and light sources that are essential building blocks for a fully integrated nanophotonic and quantum photonic circuit.

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4

Matsuda, Nobuyuki, and Hiroki Takesue. "Generation and manipulation of entangled photons on silicon chips." Nanophotonics 5, no. 3 (August 1, 2016): 440–55. http://dx.doi.org/10.1515/nanoph-2015-0148.

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AbstractIntegrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

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5

Tassaert, M., S. Keyvaninia, D. Van Thourhout, W. M. J. Green, Y. Vlasov, and G. Roelkens. "An optically pumped nanophotonic InP/InGaAlAs optical amplifier integrated on a SOI waveguide circuit." Optical and Quantum Electronics 44, no. 12-13 (March 9, 2012): 513–19. http://dx.doi.org/10.1007/s11082-012-9568-x.

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6

Uppu, Ravitej, Freja T. Pedersen, Ying Wang, Cecilie T. Olesen, Camille Papon, Xiaoyan Zhou, Leonardo Midolo, et al. "Scalable integrated single-photon source." Science Advances 6, no. 50 (December 2020): eabc8268. http://dx.doi.org/10.1126/sciadv.abc8268.

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Photonic qubits are key enablers for quantum information processing deployable across a distributed quantum network. An on-demand and truly scalable source of indistinguishable single photons is the essential component enabling high-fidelity photonic quantum operations. A main challenge is to overcome noise and decoherence processes to reach the steep benchmarks on generation efficiency and photon indistinguishability required for scaling up the source. We report on the realization of a deterministic single-photon source featuring near-unity indistinguishability using a quantum dot in an “on-chip” planar nanophotonic waveguide circuit. The device produces long strings of >100 single photons without any observable decrease in the mutual indistinguishability between photons. A total generation rate of 122 million photons per second is achieved, corresponding to an on-chip source efficiency of 84%. These specifications of the single-photon source are benchmarked for boson sampling and found to enable scaling into the regime of quantum advantage.

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7

Van Campenhout, J., P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J. M. Fedeli, C. Lagahe, and R. Baets. "Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit." Optics Express 15, no. 11 (2007): 6744. http://dx.doi.org/10.1364/oe.15.006744.

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8

Hadden, J. P., Cobi Maynard, Daryl M. Beggs, Robert A. Taylor, and Anthony J. Bennett. "Design of free-space couplers for suspended triangular nano-beam waveguides." Journal of Physics D: Applied Physics 55, no. 47 (October 5, 2022): 474002. http://dx.doi.org/10.1088/1361-6463/ac941e.

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Abstract Photonic waveguides (WGs) with triangular cross section are being investigated for material systems such as diamond, glasses and gallium nitride, which lack easy options to create conventional rectangular nanophotonic waveguides. The design rules for optical elements in these triangular WGs, such as couplers and gratings, are not well established. Here we present simulations of elements designed to couple light into, and out of, triangular WGs from the vertical direction, which can be implemented with current angled-etch fabrication technology. The devices demonstrate coupling efficiencies approaching 50% for light focused from a high numerical aperture objective. The implementation of such couplers will enable fast and efficient testing of closely spaced integrated circuit components.

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9

Chew, Xiong Yeu, Guang Ya Zhou, and Fook Siong Chau. "Novel Doubly Nano-Scale Perturbative Resonance Control of a Free-Suspending Photonic Crystal Structure." Applied Mechanics and Materials 83 (July 2011): 147–50. http://dx.doi.org/10.4028/www.scientific.net/amm.83.147.

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The impact of developing nanophotonic components have proven to be a promising research on the future optical integrated circuit complementing the current scaling of semiconductors for faster board-board, chip-chip interconnect speeds. Essentially photonic crystals (PhC) symbolize an emerging class of periodic nanomaterials that offers flexibilities in achieving novel devices. Based on the investigations of the high-Q resonance mode energy distributions, we optimized the nanoscale tip for optimal perturbative effect with low loss resonance control in the optical near field regime. In this study to achieve larger spectral resonance, we proposed using a novel doubly nanoscale perturbative tip to achieve optimal accurate photonic crystal resonance control. Such method may be driven by a nano-electromechanical (NEMS) system that may be fabricated with monolithic approaches.

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10

Romeira, Bruno, José M. L. Figueiredo та Julien Javaloyes. "NanoLEDs for energy-efficient and gigahertz-speed spike-based sub-λ neuromorphic nanophotonic computing". Nanophotonics 9, № 13 (25 червня 2020): 4149–62. http://dx.doi.org/10.1515/nanoph-2020-0177.

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AbstractEvent-activated biological-inspired subwavelength (sub-λ) photonic neural networks are of key importance for future energy-efficient and high-bandwidth artificial intelligence systems. However, a miniaturized light-emitting nanosource for spike-based operation of interest for neuromorphic optical computing is still lacking. In this work, we propose and theoretically analyze a novel nanoscale nanophotonic neuron circuit. It is formed by a quantum resonant tunneling (QRT) nanostructure monolithic integrated into a sub-λ metal-cavity nanolight-emitting diode (nanoLED). The resulting optical nanosource displays a negative differential conductance which controls the all-or-nothing optical spiking response of the nanoLED. Here we demonstrate efficient activation of the spiking response via high-speed nonlinear electrical modulation of the nanoLED. A model that combines the dynamical equations of the circuit which considers the nonlinear voltage-controlled current characteristic, and rate equations that takes into account the Purcell enhancement of the spontaneous emission, is used to provide a theoretical framework to investigate the optical spiking dynamic properties of the neuromorphic nanoLED. We show inhibitory- and excitatory-like optical spikes at multi-gigahertz speeds can be achieved upon receiving exceptionally low (sub-10 mV) synaptic-like electrical activation signals, lower than biological voltages of 100 mV, and with remarkably low energy consumption, in the range of 10–100 fJ per emitted spike. Importantly, the energy per spike is roughly constant and almost independent of the incoming modulating frequency signal, which is markedly different from conventional current modulation schemes. This method of spike generation in neuromorphic nanoLED devices paves the way for sub-λ incoherent neural elements for fast and efficient asynchronous neural computation in photonic spiking neural networks.

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11

Morales-Bonilla, Samuel, Cecilia Mercado-Zúñiga, Juan Pablo Campos-López, César Carrillo-Delgado, Claudia Lizbeth Martínez-González, and Carlos Torres-Torres. "Unidirectional Optical Kerr Transmittance in Hierarchical Carbon/Platinum Nanostructures." Photonics 7, no. 3 (July 30, 2020): 54. http://dx.doi.org/10.3390/photonics7030054.

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A strong contrast in the third-order nonlinear optical effects exhibited by hierarchical nanostructures explored in a bidirectional optical circuit is reported. The samples were integrated by multiwall carbon nanotubes and platinum-decorated carbon nanotubes synthetized by an aerosol pyrolysis technique and followed by a chemical vapor deposition method. Coupled and decoupled third-order nonlinear optical properties of the nanocomposites were studied. A nanosecond two-wave mixing experiment at 532 nm wavelength was conducted to analyze the optical Kerr effect in the samples. Multi-photonic interactions were evaluated by a single-beam transmittance as a function of input irradiance and volume fraction of the nanoparticles integrated in the nanohybrids. A two-photon absorption process was identified as the main physical mechanism responsible for the anisotropy in the observed optical nonlinearities. Random carbon nanotube networks in film form were put on top of platinum-decorated carbon nanotubes in order to build up a bilayer sample featuring optical selectivity. The switching of optical signals in propagation through the samples was obtained by an orientation-selectable optical transmittance. Unidirectional optically controlled laser pulses dependent on irradiance and polarization in a two-wave mixing was proposed with potential nanophotonic and nanoelectronic applications. The design of signal processing functions driven by nanohybrid platforms can be contemplated.

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12

Abdollahramezani, Sajjad, Omid Hemmatyar, Hossein Taghinejad, Alex Krasnok, Yashar Kiarashinejad, Mohammadreza Zandehshahvar, Andrea Alù, and Ali Adibi. "Tunable nanophotonics enabled by chalcogenide phase-change materials." Nanophotonics 9, no. 5 (June 6, 2020): 1189–241. http://dx.doi.org/10.1515/nanoph-2020-0039.

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AbstractNanophotonics has garnered intensive attention due to its unique capabilities in molding the flow of light in the subwavelength regime. Metasurfaces (MSs) and photonic integrated circuits (PICs) enable the realization of mass-producible, cost-effective, and efficient flat optical components for imaging, sensing, and communications. In order to enable nanophotonics with multipurpose functionalities, chalcogenide phase-change materials (PCMs) have been introduced as a promising platform for tunable and reconfigurable nanophotonic frameworks. Integration of non-volatile chalcogenide PCMs with unique properties such as drastic optical contrasts, fast switching speeds, and long-term stability grants substantial reconfiguration to the more conventional static nanophotonic platforms. In this review, we discuss state-of-the-art developments as well as emerging trends in tunable MSs and PICs using chalcogenide PCMs. We outline the unique material properties, structural transformation, and thermo-optic effects of well-established classes of chalcogenide PCMs. The emerging deep learning-based approaches for the optimization of reconfigurable MSs and the analysis of light-matter interactions are also discussed. The review is concluded by discussing existing challenges in the realization of adjustable nanophotonics and a perspective on the possible developments in this promising area.

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13

Xiong, Chi, Wolfram Pernice, Carsten Schuck, and Hong X. Tang. "Integrated Photonic Circuits in Gallium Nitride and Aluminum Nitride." International Journal of High Speed Electronics and Systems 23, no. 01n02 (March 2014): 1450001. http://dx.doi.org/10.1142/s0129156414500013.

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Integrated optics is a promising optical platform both for its enabling role in optical interconnects and applications in on-chip optical signal processing. In this paper, we discuss the use of group III-nitride (GaN, AlN) as a new material system for integrated photonics compatible with silicon substrates. Exploiting their inherent second-order nonlinearity we demonstrate and second, third harmonic generation in GaN nanophotonic circuits and high-speed electro-optic modulation in AlN nanophotonic circuits.

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14

Anikina, Maria A., Prithu Roy, Svetlana A. Kadinskaya, Alexey Kuznetsov, Valeriy M. Kondratev, and Alexey D. Bolshakov. "Numerical Study of GaP Nanowires: Individual and Coupled Optical Waveguides and Resonant Phenomena." Nanomaterials 13, no. 1 (December 23, 2022): 56. http://dx.doi.org/10.3390/nano13010056.

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The development of novel nanophotonic devices and circuits necessitates studies of optical phenomena in nanoscale structures. Catalyzed semiconductor nanowires are known for their unique properties including high crystallinity and silicon compatibility making them the perfect platform for optoelectronics and nanophotonics. In this work, we explore numerically optical properties of gallium phosphide nanowires governed by their dimensions and study waveguiding, coupling between the two wires and resonant field confinement to unveil nanoscale phenomena paving the way for the fabrication of the integrated optical circuits. Photonic coupling between the two adjacent nanowires is studied in detail to demonstrate good tolerance of the coupling to the distance between the two aligned wires providing losses not exceeding 30% for the gap of 100 nm. The dependence of this coupling is investigated with the wires placed nearby varying their relative position. It is found that due to the resonant properties of a nanowire acting as a Fabry–Perot cavity, two coupled wires represent an attractive system for control over the optical signal processing governed by the signal interference. We explore size-dependent plasmonic behaviors of the metallic Ga nanoparticle enabling GaP nanowire as an antenna-waveguide hybrid system. We demonstrate numerically that variation of the structure dimensions allows the nearfield tailoring. As such, we explore GaP NWs as a versatile platform for integrated photonic circuits.

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15

Rath, P., S. Ummethala, S. Diewald, G. Lewes-Malandrakis, D. Brink, N. Heidrich, C. Nebel, and W. H. P. Pernice. "Diamond electro-optomechanical resonators integrated in nanophotonic circuits." Applied Physics Letters 105, no. 25 (December 22, 2014): 251102. http://dx.doi.org/10.1063/1.4901105.

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16

Splitthoff, Lukas, Martin A. Wolff, Thomas Grottke, and Carsten Schuck. "Tantalum pentoxide nanophotonic circuits for integrated quantum technology." Optics Express 28, no. 8 (April 8, 2020): 11921. http://dx.doi.org/10.1364/oe.388080.

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17

Fang, Yurui, and Mengtao Sun. "Nanoplasmonic waveguides: towards applications in integrated nanophotonic circuits." Light: Science & Applications 4, no. 6 (June 2015): e294-e294. http://dx.doi.org/10.1038/lsa.2015.67.

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18

Jiao, Yuqing, Jos van der Tol, Vadim Pogoretskii, Jorn van Engelen, Amir Abbas Kashi, Sander Reniers, Yi Wang, et al. "Indium Phosphide Membrane Nanophotonic Integrated Circuits on Silicon." physica status solidi (a) 217, no. 3 (December 20, 2019): 1900606. http://dx.doi.org/10.1002/pssa.201900606.

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19

He, Jijun, Ioannis Paradisanos, Tianyi Liu, Alisson R. Cadore, Junqiu Liu, Mikhail Churaev, Rui Ning Wang, et al. "Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials." Nano Letters 21, no. 7 (March 23, 2021): 2709–18. http://dx.doi.org/10.1021/acs.nanolett.0c04149.

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20

Rath, Patrik, Oliver Kahl, Simone Ferrari, Fabian Sproll, Georgia Lewes-Malandrakis, Dietmar Brink, Konstantin Ilin, Michael Siegel, Christoph Nebel, and Wolfram Pernice. "Superconducting single-photon detectors integrated with diamond nanophotonic circuits." Light: Science & Applications 4, no. 10 (October 2015): e338-e338. http://dx.doi.org/10.1038/lsa.2015.111.

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21

Wei, Hong, and Hongxing Xu. "Nanowire-based plasmonic waveguides and devices for integrated nanophotonic circuits." Nanophotonics 1, no. 2 (November 1, 2012): 155–69. http://dx.doi.org/10.1515/nanoph-2012-0012.

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AbstractThe fast development of plasmonics have greatly advanced our understanding to the abundant phenomena related to surface plamon polaritons (SPPs) and improved our ability to manipulate light at the nanometer scale. With tightly confined local field, SPPs can be transmitted in waveguides of subwavelength dimensions. Nanophotonic circuits built with plasmonic elements can be scaled down to dimensions compatible with semiconductor-based nanoelectronic circuits, which provides a potential solution for the next-generation information technology. Different structures have been explored as plasmonic waveguides for potential integration applications. This review is focused on metallic nanowire waveguides and functional components in nanowire networks. We reviewed recent progress in research about plasmon generation, emission direction and polarization, group velocity, loss and propagation length, and the near-field distribution revealed by quantum dot fluorescence imaging. Electrical generation and detection of SPPs moves towards the building of plasmonic circuits, where bulky external light sources and detectors may be omitted. The coupling between metal nanowires and emitters is important for tailoring light-matter interactions, and for various potential applications. In multi-nanowire structures, plasmon signal control and processing are introduced. The working principles of these nanowire-based devices, which are based on the control to the near field distributions, will become the design rule for nanophotonic circuits with higher complexity for optical signal processing. The recent developments in hybrid photonic-plasmonic waveguides and devices are promising for making devices with unprecedented performance.

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22

Firby, Curtis J., PoHan Chang, Amr S. Helmy, and Abdulhakem Y. Elezzabi. "Versatile broadband polarization-independent optical circulators for nanophotonic integrated circuits." Journal of the Optical Society of America B 35, no. 7 (June 4, 2018): 1504. http://dx.doi.org/10.1364/josab.35.001504.

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23

Bradley, Jonathan. "(Invited) Rare-Earth-Doped Tellurium Oxide Light Emitting Nanophotonic Devices." ECS Meeting Abstracts MA2022-01, no. 20 (July 7, 2022): 1092. http://dx.doi.org/10.1149/ma2022-01201092mtgabs.

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Tellurium oxide is a promising material for passive, nonlinear and rare-earth-doped active photonic devices because of its high transparency, high refractive index, high nonlinearity and unique structure allowing for high rare-earth solubility. In this talk I present on our recent progress on tellurite glass on-chip light emitting nanophotonic devices. Low-loss passive devices including high-Q-factor microdisks and microring resonators will be discussed. In addition, rare-earth-doped active devices, including erbium-doped and thulium-doped waveguide amplifiers and microlasers will be presented. Using similar structures, we demonstrate nonlinear light emission via four-wave-mixing, supercontinuum generation and third harmonic generation. These tellurium oxide integrated nanophotonic devices are highly promising for compact and low-cost passive, active and nonlinear photonic integrated circuits for applications in communications, computing, and sensing.

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24

Zhao, Mengdi, and Kejie Fang. "InGaP quantum nanophotonic integrated circuits with 1.5% nonlinearity-to-loss ratio." Optica 9, no. 2 (February 18, 2022): 258. http://dx.doi.org/10.1364/optica.440383.

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25

Sugimoto, Y., N. Ikeda, N. Ozaki, Y. Watanabe, S. Ohkouchi, T. Kuroda, T. Mano, et al. "Advanced quantum dot and photonic crystal technologies for integrated nanophotonic circuits." Microelectronics Journal 40, no. 4-5 (April 2009): 736–40. http://dx.doi.org/10.1016/j.mejo.2008.11.003.

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26

Zhang, Junxi, Lei Hu, Zhijia Hu, Yongqing Wei, Wei Zhang, and Lide Zhang. "Broadband Plasmonic Nanopolarizer Based on Different Surface Plasmon Resonance Modes in a Silver Nanorod." Crystals 10, no. 6 (May 31, 2020): 447. http://dx.doi.org/10.3390/cryst10060447.

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Conventional polarizers including sheet, wire-grid, prism, and Brewster-angle type polarizers are not easily integrated with photonic circuits. Polarizing elements on the nanoscale are indispensable for integrated all-optical nanophotonic devices. Here, we propose a plasmonic nanopolarizer based on a silver nanorod. The polarization characteristics result from the excitation of different resonance modes of localized surface plasmons (LSPs) at different wavelengths. Furthermore, the polarization characteristics in near field regions have been demonstrated by the electric field distribution of the nanorod based on finite-difference time-domain (FDTD) simulation, indicating a strong local resonant cavity with a standing wave mode for transverse electric (TE) polarization and weak electric fields distributed for transverse magnetic (TM) polarization. The nanopolarizer can efficiently work in the near field region, exhibiting a nanopolarization effect. In addition, very high extinction ratios and extremely low insertion losses can be achieved. Particularly, the nanopolarizer can work in a broadband from visible to near-infrared wavelengths, which can be tuned by changing the aspect ratio of the nanorod. The plasmonic nanopolarizer is a promising candidate for potential applications in the integration of nanophotonic devices and circuits.

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27

HARRIS, JAMES S. "(GaIn)(NAsSb): MBE GROWTH, HETEROSTRUCTURE AND NANOPHOTONIC DEVICES." International Journal of Nanoscience 06, no. 03n04 (June 2007): 269–74. http://dx.doi.org/10.1142/s0219581x07004699.

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Dilute nitride GaInNAs and GaInNAsSb alloys grown on GaAs have quickly become excellent candidates for a variety of lower cost 1.2–1.6 μm lasers, optical amplifiers, and high power Raman pump lasers that will be required in the networks to provide high speed communications to the desktop. Because these quantum well active regions can be grown on GaAs , the distributed mirror technology for vertical cavity surface emitting lasers coupling into waveguides and fibers and photonic crystal structures can be readily combined with GaInNAsSb active regions to produce a variety of advanced photonic devices that will be crucial for advanced photonic integrated circuits. GaInNAs ( Sb ) provides several new challenges compared to earlier III–V alloys because of the limited solubility of N , phase segregation, nonradiative defects caused by the low growth temperature, and ion damage from the N plasma source. This paper describes progress in overcoming some of the material challenges and progress in realizing record setting edge emitting lasers, the first VCSELs operating at 1.5 μm based on GaInNAsSb and integrated photonic crystal and nanoaperture lasers.

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28

Elmanov, Ilia, Anna Elmanova, Sophia Komrakova, Alexander Golikov, Natalya Kaurova, Vadim Kovalyuk, and Gregory Goltsman. "Method for determination of resists parameters for photonic - integrated circuits e-beam lithography on silicon nitride platform." EPJ Web of Conferences 220 (2019): 03012. http://dx.doi.org/10.1051/epjconf/201922003012.

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In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.

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29

Rath, Patrik, Svetlana Khasminskaya, Christoph Nebel, Christoph Wild, and Wolfram HP Pernice. "Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films." Beilstein Journal of Nanotechnology 4 (May 7, 2013): 300–305. http://dx.doi.org/10.3762/bjnano.4.33.

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Synthetic diamond films can be prepared on a waferscale by using chemical vapour deposition (CVD) on suitable substrates such as silicon or silicon dioxide. While such films find a wealth of applications in thermal management, in X-ray and terahertz window design, and in gyrotron tubes and microwave transmission lines, their use for nanoscale optical components remains largely unexplored. Here we demonstrate that CVD diamond provides a high-quality template for realizing nanophotonic integrated optical circuits. Using efficient grating coupling devices prepared from partially etched diamond thin films, we investigate millimetre-sized optical circuits and achieve single-mode waveguiding at telecoms wavelengths. Our results pave the way towards broadband optical applications for sensing in harsh environments and visible photonic devices.

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30

Asgari, Somayyeh, and Nosrat Granpayeh. "Applications of Tunable Nanoscale Midinfrared Graphene Based Slot Cavity in Nanophotonic Integrated Circuits." IEEE Transactions on Nanotechnology 17, no. 3 (May 2018): 533–42. http://dx.doi.org/10.1109/tnano.2018.2822277.

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31

Dai, Daoxin, and Mao Mao. "Mode converter based on an inverse taper for multimode silicon nanophotonic integrated circuits." Optics Express 23, no. 22 (October 21, 2015): 28376. http://dx.doi.org/10.1364/oe.23.028376.

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32

Ahmed, Moustafa, Yas Al-Hadeethi, Ahmed Bakry, Hamed Dalir, and Volker J. Sorger. "Integrated photonic FFT for photonic tensor operations towards efficient and high-speed neural networks." Nanophotonics 9, no. 13 (June 26, 2020): 4097–108. http://dx.doi.org/10.1515/nanoph-2020-0055.

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AbstractThe technologically-relevant task of feature extraction from data performed in deep-learning systems is routinely accomplished as repeated fast Fourier transforms (FFT) electronically in prevalent domain-specific architectures such as in graphics processing units (GPU). However, electronics systems are limited with respect to power dissipation and delay, due to wire-charging challenges related to interconnect capacitance. Here we present a silicon photonics-based architecture for convolutional neural networks that harnesses the phase property of light to perform FFTs efficiently by executing the convolution as a multiplication in the Fourier-domain. The algorithmic executing time is determined by the time-of-flight of the signal through this photonic reconfigurable passive FFT ‘filter’ circuit and is on the order of 10’s of picosecond short. A sensitivity analysis shows that this optical processor must be thermally phase stabilized corresponding to a few degrees. Furthermore, we find that for a small sample number, the obtainable number of convolutions per {time, power, and chip area) outperforms GPUs by about two orders of magnitude. Lastly, we show that, conceptually, the optical FFT and convolution-processing performance is indeed directly linked to optoelectronic device-level, and improvements in plasmonics, metamaterials or nanophotonics are fueling next generation densely interconnected intelligent photonic circuits with relevance for edge-computing 5G networks by processing tensor operations optically.

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33

Son, Gyeongho, Seungjun Han, Jongwoo Park, Kyungmok Kwon, and Kyoungsik Yu. "High-efficiency broadband light coupling between optical fibers and photonic integrated circuits." Nanophotonics 7, no. 12 (October 20, 2018): 1845–64. http://dx.doi.org/10.1515/nanoph-2018-0075.

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AbstractEfficient light energy transfer between optical waveguides has been a critical issue in various areas of photonics and optoelectronics. Especially, the light coupling between optical fibers and integrated waveguide structures provides essential input-output interfaces for photonic integrated circuits (PICs) and plays a crucial role in reliable optical signal transport for a number of applications, such as optical interconnects, optical switching, and integrated quantum optics. Significant efforts have been made to improve light coupling properties, including coupling efficiency, bandwidth, polarization dependence, alignment tolerance, as well as packing density. In this review article, we survey three major light coupling methods between optical fibers and integrated waveguides: end-fire coupling, diffraction grating-based coupling, and adiabatic coupling. Although these waveguide coupling methods are different in terms of their operating principles and physical implementations, they have gradually adopted various nanophotonic structures and techniques to improve the light coupling properties as our understanding to the behavior of light and nano-fabrication technology advances. We compare the pros and cons of each light coupling method and provide an overview of the recent developments in waveguide coupling between optical fibers and integrated photonic circuits.

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34

Yu, Longhai, Jiajiu Zheng, Yang Xu, Daoxin Dai, and Sailing He. "Local and Nonlocal Optically Induced Transparency Effects in Graphene–Silicon Hybrid Nanophotonic Integrated Circuits." ACS Nano 8, no. 11 (November 7, 2014): 11386–93. http://dx.doi.org/10.1021/nn504377m.

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Tokushima, Masatoshi, J. J. Vegas Olmos, and Ken-Ichi Kitayama. "Ultracompact Photonic-Waveguide Circuits in Si-Pillar Photonic-Crystal Structures for Integrated Nanophotonic Switches." Journal of Nanoscience and Nanotechnology 10, no. 3 (March 1, 2010): 1626–34. http://dx.doi.org/10.1166/jnn.2010.2046.

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Zheng, Jiajiu, Amey Khanolkar, Peipeng Xu, Shane Colburn, Sanchit Deshmukh, Jason Myers, Jesse Frantz, et al. "GST-on-silicon hybrid nanophotonic integrated circuits: a non-volatile quasi-continuously reprogrammable platform." Optical Materials Express 8, no. 6 (May 17, 2018): 1551. http://dx.doi.org/10.1364/ome.8.001551.

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37

Cui, Luna, and Li Yu. "Multifunctional logic gates based on silicon hybrid plasmonic waveguides." Modern Physics Letters B 32, no. 02 (January 20, 2018): 1850008. http://dx.doi.org/10.1142/s0217984918500082.

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Nano-scale Multifunctional Logic Gates based on Si hybrid plasmonic waveguides (HPWGs) are designed by utilizing the multimode interference (MMI) effect. The proposed device is composed of three input waveguides, three output waveguides and an MMI waveguide. The functional size of the device is only 1000 nm × 3200 nm, which is much smaller than traditional Si-based all-optical logic gates. By setting different input signals and selecting suitable threshold value, OR, AND, XOR and NOT gates are achieved simultaneously or individually in a single device. This may provide a way for ultrahigh speed signal processing and future nanophotonic integrated circuits.

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Piracha, Afaq H., Patrik Rath, Kumaravelu Ganesan, Stefan Kühn, Wolfram H. P. Pernice, and Steven Prawer. "Scalable Fabrication of Integrated Nanophotonic Circuits on Arrays of Thin Single Crystal Diamond Membrane Windows." Nano Letters 16, no. 5 (April 27, 2016): 3341–47. http://dx.doi.org/10.1021/acs.nanolett.6b00974.

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39

Sumetsky, M. "Nanophotonics of optical fibers." Nanophotonics 2, no. 5-6 (December 16, 2013): 393–406. http://dx.doi.org/10.1515/nanoph-2013-0041.

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AbstractThis review is concerned with nanoscale effects in highly transparent dielectric photonic structures fabricated from optical fibers. In contrast to those in plasmonics, these structures do not contain metal particles, wires, or films with nanoscale dimensions. Nevertheless, a nanoscale perturbation of the fiber radius can significantly alter their performance. This paper consists of three parts. The first part considers propagation of light in thin optical fibers (microfibers) having the radius of the order of 100 nanometers to 1 micron. The fundamental mode propagating along a microfiber has an evanescent field which may be strongly expanded into the external area. Then, the cross-sectional dimensions of the mode and transmission losses are very sensitive to small variations of the microfiber radius. Under certain conditions, a change of just a few nanometers in the microfiber radius can significantly affect its transmission characteristics and, in particular, lead to the transition from the waveguiding to non-waveguiding regime. The second part of the review considers slow propagation of whispering gallery modes in fibers having the radius of the order of 10–100 microns. The propagation of these modes along the fiber axis is so slow that they can be governed by extremely small nanoscale changes of the optical fiber radius. This phenomenon is exploited in SNAP (surface nanoscale axial photonics), a new platform for fabrication of miniature super-low-loss photonic integrated circuits with unprecedented sub-angstrom precision. The SNAP theory and applications are overviewed. The third part of this review describes methods of characterization of the radius variation of microfibers and regular optical fibers with sub-nanometer precision.

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Harris, Nicholas C., Darius Bunandar, Mihir Pant, Greg R. Steinbrecher, Jacob Mower, Mihika Prabhu, Tom Baehr-Jones, Michael Hochberg, and Dirk Englund. "Large-scale quantum photonic circuits in silicon." Nanophotonics 5, no. 3 (August 1, 2016): 456–68. http://dx.doi.org/10.1515/nanoph-2015-0146.

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AbstractQuantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today’s classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes.Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.

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Kaushik, Vishal, Swati Rajput, Sulabh Srivastav, Lalit Singh, Prem Babu, Elham Heidari, Moustafa Ahmed, et al. "On-chip nanophotonic broadband wavelength detector with 2D-Electron gas." Nanophotonics 11, no. 2 (November 30, 2021): 289–96. http://dx.doi.org/10.1515/nanoph-2021-0365.

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Abstract Miniaturized, low-cost wavelength detectors are gaining enormous interest as we step into the new age of photonics. Incompatibility with integrated circuits or complex fabrication requirement in most of the conventionally used filters necessitates the development of a simple, on-chip platform for easy-to-use wavelength detection system. Also, intensity fluctuations hinder precise, noise free detection of spectral information. Here we propose a novel approach of utilizing wavelength sensitive photocurrent across semiconductor heterojunctions to experimentally validate broadband wavelength detection on an on-chip platform with simple fabrication process. The proposed device utilizes linear frequency response of internal photoemission via 2-D electron gas in a ZnO based heterojunction along with a reference junction for coherent common mode rejection. We report sensitivity of 0.96 μA/nm for a broad wavelength-range of 280 nm from 660 to 940 nm. Simple fabrication process, efficient intensity noise cancelation along with heat resistance and radiation hardness of ZnO makes the proposed platform simple, low-cost and efficient alternative for several applications such as optical spectrometers, sensing, and Internet of Things (IOTs).

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42

Zhu, Jinlong, Jiamin Liu, Tianlai Xu, Shuai Yuan, Zexu Zhang, Hao Jiang, Honggang Gu, Renjie Zhou, and Shiyuan Liu. "Optical wafer defect inspection at the 10 nm technology node and beyond." International Journal of Extreme Manufacturing 4, no. 3 (April 21, 2022): 032001. http://dx.doi.org/10.1088/2631-7990/ac64d7.

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Abstract The growing demand for electronic devices, smart devices, and the Internet of Things constitutes the primary driving force for marching down the path of decreased critical dimension and increased circuit intricacy of integrated circuits. However, as sub-10 nm high-volume manufacturing is becoming the mainstream, there is greater awareness that defects introduced by original equipment manufacturer components impact yield and manufacturing costs. The identification, positioning, and classification of these defects, including random particles and systematic defects, are becoming more and more challenging at the 10 nm node and beyond. Very recently, the combination of conventional optical defect inspection with emerging techniques such as nanophotonics, optical vortices, computational imaging, quantitative phase imaging, and deep learning is giving the field a new possibility. Hence, it is extremely necessary to make a thorough review for disclosing new perspectives and exciting trends, on the foundation of former great reviews in the field of defect inspection methods. In this article, we give a comprehensive review of the emerging topics in the past decade with a focus on three specific areas: (a) the defect detectability evaluation, (b) the diverse optical inspection systems, and (c) the post-processing algorithms. We hope, this work can be of importance to both new entrants in the field and people who are seeking to use it in interdisciplinary work.

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43

Siampour, Hamidreza, Ou Wang, Vladimir A. Zenin, Sergejs Boroviks, Petr Siyushev, Yuanqing Yang, Valery A. Davydov, et al. "Ultrabright single-photon emission from germanium-vacancy zero-phonon lines: deterministic emitter-waveguide interfacing at plasmonic hot spots." Nanophotonics 9, no. 4 (April 2, 2020): 953–62. http://dx.doi.org/10.1515/nanoph-2020-0036.

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AbstractStriving for nanometer-sized solid-state single-photon sources, we investigate atom-like quantum emitters based on single germanium-vacancy (GeV) centers isolated in crystalline nanodiamonds (NDs). Cryogenic characterization indicated symmetry-protected and bright (>106 counts/s with off-resonance excitation) zero-phonon optical transitions with up to 6-fold enhancement in energy splitting of their ground states as compared to that found for GeV centers in bulk diamonds (i.e. up to 870 GHz in highly strained NDs vs. 150 GHz in bulk). Utilizing lithographic alignment techniques, we demonstrate an integrated nanophotonic platform for deterministic interfacing plasmonic waveguides with isolated GeV centers in NDs, which enables 10-fold enhancement of single-photon decay rates along with the emission direction control by judiciously designing and positioning a Bragg reflector. This approach allows one to realize the unidirectional emission from single-photon dipolar sources, thereby opening new perspectives for the realization of quantum optical integrated circuits.

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44

FERRY, D. K., R. AKIS, M. J. GILBERT, A. CUMMINGS, and S. M. RAMEY. "SEMICONDUCTOR DEVICE SCALING: PHYSICS, TRANSPORT, AND THE ROLE OF NANOWIRES." International Journal of High Speed Electronics and Systems 17, no. 03 (September 2007): 445–56. http://dx.doi.org/10.1142/s0129156407004631.

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Nanoelectronics (including nanomagnetics and nanophotonics) generally refers to nanometer scale devices, and to circuits and architectures which are composed of these devices. Continued scaling of the devices into the nanometer range leads to enhanced information processing systems. Generally, this scaling has arisen from three major sources, one of which is reduction of the physical gate length of individual transistors. Until recently, this has also allowed an increase in the clock speed of the chip, but power considerations have halted this to levels around 4 GHz in Si. Indeed, there are indications that scaling itself may be finished by the end of this decade. Instead, there are now pushes to seek alternative materials for nano-devices that may supplement the Si CMOS in a manner that allows both higher speeds and lower power. In this paper, we will cover some of the impending limitations, and discuss some alternative approaches that may signal continued evolution of integrated circuits beyond the end of the decade.

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45

Rodt, S., and S. Reitzenstein. "Integrated nanophotonics for the development of fully functional quantum circuits based on on-demand single-photon emitters." APL Photonics 6, no. 1 (January 1, 2021): 010901. http://dx.doi.org/10.1063/5.0031628.

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46

Häußler, Matthias, Robin Terhaar, Martin A. Wolff, Helge Gehring, Fabian Beutel, Wladick Hartmann, Nicolai Walter, et al. "Scaling waveguide-integrated superconducting nanowire single-photon detector solutions to large numbers of independent optical channels." Review of Scientific Instruments 94, no. 1 (January 1, 2023): 013103. http://dx.doi.org/10.1063/5.0114903.

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Superconducting nanowire single-photon detectors are an enabling technology for modern quantum information science and are gaining attractiveness for the most demanding photon counting tasks in other fields. Embedding such detectors in photonic integrated circuits enables additional counting capabilities through nanophotonic functionalization. Here, we show how a scalable number of waveguide-integrated superconducting nanowire single-photon detectors can be interfaced with independent fiber optic channels on the same chip. Our plug-and-play detector package is hosted inside a compact and portable closed-cycle cryostat providing cryogenic signal amplification for up to 64 channels. We demonstrate state-of-the-art multi-channel photon counting performance with average system detection efficiency of (40.5 ± 9.4)% and dark count rate of (123 ± 34) Hz for 32 individually addressable detectors at minimal noise-equivalent power of (5.1 ± 1.2) · 10−18 W/[Formula: see text]. Our detectors achieve timing jitter as low as 26 ps, which increases to (114 ± 17) ps for high-speed multi-channel operation using dedicated time-correlated single photon counting electronics. Our multi-channel single photon receiver offers exciting measurement capabilities for future quantum communication, remote sensing, and imaging applications.

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47

Minin, I. V., and O. V. Minin. "Structured plasmonic beam: in-plane manipulation of light at the nanoscale." IOP Conference Series: Materials Science and Engineering 1198, no. 1 (November 1, 2021): 012008. http://dx.doi.org/10.1088/1757-899x/1198/1/012008.

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Abstract The brief review on recent approaches on the formation of a new class of subwavelength scale localized structured surface plasmon polaritons (SPP) beams is discussed. For the Janus-like particle (including the geometrically symmetric particles with different dielectrics) the morphology of the field localization area and its properties depends on the particle shape and material. Plasmonic hook (PH) beam does not propagate along straight line but instead follow curved self-bending trajectory. Wavefront analysis behind of such symmetric and asymmetric mesoscale rectangle structure reveals that the unequal phase of the transmitted plane wave results in the irregularly concave deformation of the wavefront inside the dielectric which later leads to creation of the PH. Such dielectric structures placed on metal film enable the realization of new ultracompact wavelength-selective and wavelength-scaled in-plane nanophotonic components. SPP have potential to overcome the constrains on the speed of modern digital integrated devices limitation due to the metallic interconnects and increase the operating speed of future digital circuits.

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48

Yang, Xiaoyu, Xiaoyong Hu, Hong Yang, and Qihuang Gong. "Ultracompact all-optical logic gates based on nonlinear plasmonic nanocavities." Nanophotonics 6, no. 1 (January 6, 2017): 365–76. http://dx.doi.org/10.1515/nanoph-2016-0118.

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AbstractIn this study, nanoscale integrated all-optical XNOR, XOR, and NAND logic gates were realized based on all-optical tunable on-chip plasmon-induced transparency in plasmonic circuits. A large nonlinear enhancement was achieved with an organic composite cover layer based on the resonant excitation-enhancing nonlinearity effect, slow light effect, and field confinement effect provided by the plasmonic nanocavity mode, which ensured a low excitation power of 200 μW that is three orders of magnitude lower than the values in previous reports. A feature size below 600 nm was achieved, which is a one order of magnitude lower compared to previous reports. The contrast ratio between the output logic states “1” and “0” reached 29 dB, which is among the highest values reported to date. Our results not only provide an on-chip platform for the study of nonlinear and quantum optics but also open up the possibility for the realization of nanophotonic processing chips based on nonlinear plasmonics.

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Chen, Xinyu, Renjie Li, Yueyao Yu, Yuanwen Shen, Wenye Li, Yin Zhang, and Zhaoyu Zhang. "POViT: Vision Transformer for Multi-Objective Design and Characterization of Photonic Crystal Nanocavities." Nanomaterials 12, no. 24 (December 9, 2022): 4401. http://dx.doi.org/10.3390/nano12244401.

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We study a new technique for solving the fundamental challenge in nanophotonic design: fast and accurate characterization of nanoscale photonic devices with minimal human intervention. Much like the fusion between Artificial Intelligence and Electronic Design Automation (EDA), many efforts have been made to apply deep neural networks (DNN) such as convolutional neural networks to prototype and characterize next-gen optoelectronic devices commonly found in Photonic Integrated Circuits. However, state-of-the-art DNN models are still far from being directly applicable in the real world: e.g., DNN-produced correlation coefficients between target and predicted physical quantities are about 80%, which is much lower than what it takes to generate reliable and reproducible nanophotonic designs. Recently, attention-based transformer models have attracted extensive interests and been widely used in Computer Vision and Natural Language Processing. In this work, we for the first time propose a Transformer model (POViT) to efficiently design and simulate photonic crystal nanocavities with multiple objectives under consideration. Unlike the standard Vision Transformer, our model takes photonic crystals as input data and changes the activation layer from GELU to an absolute-value function. Extensive experiments show that POViT significantly improves results reported by previous models: correlation coefficients are increased by over 12% (i.e., to 92.0%) and prediction errors are reduced by an order of magnitude, among several key metric improvements. Our work has the potential to drive the expansion of EDA to fully automated photonic design (i.e., PDA). The complete dataset and code will be released to promote research in the interdisciplinary field of materials science/physics and computer science.

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50

Al-Tameemi, Saif, and Mohammed Nadhim Abbas. "All-Optical Universal Logic Gates at Nano-scale Dimensions." Iraqi Journal of Nanotechnology, no. 2 (December 7, 2021): 34–43. http://dx.doi.org/10.47758/ijn.vi2.49.

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Though photonics displays an attractive solution to the speed limitation of electronics, decreasing the size of photonic devices is one of the major problems with implementing photonic integrated circuits that are regarded the challenges to produce all-optical computers. Plasmonic can solve these problems, it be a potential solution to fill the gaps in the electronics (large bandwidth and ultra-high speed) and photonics (diffraction limit due to miniaturization size). In this paper, Nano-rings Insulator-Metal-Insulator (IMI) plasmonic waveguides has been used to propose, design, simulate, and perform all-optical universal logic gates (NOR and NAND gates). By using Finite Element Method (FEM), the structure of the proposed plasmonic universal logic gates are designed and numerically simulated by two dimensions (2-D) structure. Silver and Glass materials were chosen to construct proposed structure. The function of the proposed plasmonic NOR and NAND logic gates was achieved by destructive and constructive interferences principle. The performance of the proposed device is measured by three criteria; the transmission, extension ratio, and modulation depth. Numerical simulations show that a transmission threshold (0.3) which allows achieving the proposed plasmonic universal logic gates in one structure at 1550 nm operating wavelength. The properties of this devise was as follows: The transmission exceeds 100% in one state of NAND gate, medium values of Extension Ratio, very high MD values, and very small foot print. In the future, this device will be the access to the nanophotonic integrated circuits and it has regarded fundamental building blocks for all-optical computers.

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