Статті в журналах: "Input amplifier"

1

Borel, Andžej. "DEVELOPMENT AND INVESTIGATION OF INPUT AMPLIFIER FOR THE OSCILOSCOPE." Mokslas - Lietuvos ateitis 12 (January 20, 2020): 1–5. http://dx.doi.org/10.3846/mla.2020.11420.

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Digital oscilloscope’s structure has analog signal acquisition circuit, which transforms signal’s amplitude to fit ADC dynamic range. This circuit is commonly called oscilloscope’s vertical or front-end amplifier. Difficulty in designing front-end amplifiers in GHz range largely affects higher frequency range oscilloscope’s price. This work is focused on designing a front-end amplifier using discrete and openly sold components. We propose a design for attenuator, buffer, variable gain circuits. Amplifier’s prototype is designed. Main characteristics of the amplifier were measured. Measured bandwidth is 3 GHz. Amplifier’s gain and attenuation can support vertical scale sensitivity range from 10 mV/div to 1 V/div. Step response distortion is under 10 %. SMD and PTH relay model attenuators were evaluated. In this paper we review oscilloscope’s front-end purpose and structure. We review amplifiers design and provide the results of experimental measurements.

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2

Santoso, Budi, and Zainal Abidin. "KARAKTERISTIK AMPLIFIER CLASS D MENGGUNAKAN FIELD EFFECT TRANSISTOR (FET) TYPE IRF9530 DAN IRF630." Jurnal Teknika 12, no. 2 (September 20, 2020): 71. http://dx.doi.org/10.30736/jt.v13i2.470.

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In the development of power amplifiers, MOSFETs are widely used in the composition of the manufacture. As is known, MOSFETs have a longer on-off time loss compared to IGBT. The loss on the on-off time has an impact on the heat generated by the MOSFET. Class D Audio Amplifier is basically a Switching-Amplifier or Pulse Width Modulation-Amplifier. High efficiency means that it will produce low power dissipation, thus the power wasted is relatively lower when compared to class A, B or AB amplifiers. Because the class D audio amplifier can be said to be more economical because it does not require a large heatsink and a large power supply. The manufacture of the Class D power amplifier system uses a voltage of 28.5 volts DC on the final transistor IRF9530 AND IRF630 measuring the input transistors of 3.3 volts DC, 28.5 volts DC. In the test using an oscilloscope type LS 8050, 50 MHz frequency, the position of the audio input off of the amplifier has sound defects. Testing of the power amplifier is carried out when the treble on the input tone control is full db in the defective amplifier wave.

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3

Reit, Marco, Michael Berens, and Wolfgang Mathis. "Ambiguities in input-output behavior of driven nonlinear systems close to bifurcation." Archives of Electrical Engineering 65, no. 2 (June 1, 2016): 337–47. http://dx.doi.org/10.1515/aee-2016-0025.

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Abstract Since the so-called Hopf-type amplifier has become an established element in the modeling of the mammalian hearing organ, it also gets attention in the design of nonlinear amplifiers for technical applications. Due to its pure sinusoidal response to a sinusoidal input signal, the amplifier based on the normal form of the Andronov-Hopf bifurcation is a peculiar exception of nonlinear amplifiers. This feature allows an exact mathematical formulation of the input-output characteristic and thus deeper insights of the nonlinear behavior. Aside from the Hopf-type amplifier we investigate an extension of the Hopf system with focus on ambiguities, especially the separation of solution sets, and double hysteresis behavior in the input-output characteristic. Our results are validated by a DSP implementation.

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4

Mabrok, Mussa, Zahriladha Zakaria, and Nasrullah Saifullah. "Design of Wide-band Power Amplifier based on Power Combiner Technique with Low Intermodulation Distortion." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (October 1, 2018): 3504. http://dx.doi.org/10.11591/ijece.v8i5.pp3504-3511.

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RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non-linearity behavior of power amplifiers that leads to inter-modulation distortion. This paper presents the design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class-A topology and ATF-511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wide-band power amplifier. The simulation results showed an input return loss (S11) which less than -10dB, and gain (S21) is higher than 10 dB over the entire frequency band and considers as flat as well. The designed amplifier is stable over the bandwidth (K>1). Inter-modulation distortion is -56.919dBc which is less than -50dBc with 10dBm input power. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.

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5

Han, Kwonsang, Hyungseup Kim, Jaesung Kim, Donggeun You, Hyunwoo Heo, Yongsu Kwon, Junghoon Lee, and Hyoungho Ko. "A 24.88 nV/√Hz Wheatstone Bridge Readout Integrated Circuit with Chopper-Stabilized Multipath Operational Amplifier." Applied Sciences 10, no. 1 (January 5, 2020): 399. http://dx.doi.org/10.3390/app10010399.

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This paper proposes a low noise readout integrated circuit (IC) with a chopper-stabilized multipath operational amplifier suitable for a Wheatstone bridge sensor. The input voltage of the readout IC changes due to a change in input resistance, and is efficiently amplified using a three-operational amplifier instrumentation amplifier (IA) structure with high input impedance and adjustable gain. Furthermore, a chopper-stabilized multipath structure is applied to the operational amplifier, and a ripple reduction loop (RRL) in the low frequency path (LFP) is employed to attenuate the ripple generated by the chopper stabilization technique. A 12-bit successive approximation register (SAR) analog-to-digital converter (ADC) is employed to convert the output voltage of the three-operational amplifier IA into digital code. The Wheatstone bridge readout IC is manufactured using a standard 0.18 µm complementary metal-oxide-semiconductor (CMOS) technology, drawing 833 µA current from a 1.8 V supply. The input range and the input referred noise are ±20 mV and 24.88 nV/√Hz, respectively.

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6

Gao, W., Z. W. Lu, W. M. He, Y. K. Dong, and W. L. J. Hasi. "Characteristics of amplified spectrum of a weak frequency-detuned signal in a Brillouin amplifier." Laser and Particle Beams 27, no. 3 (June 24, 2009): 465–70. http://dx.doi.org/10.1017/s0263034609990164.

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AbstractWe will theoretically and experimentally study the effect of the linewidth and the frequency of a weak detuned signal on its amplified spectrum in the Brillouin amplifier. We will show that the spectral profile of the input signal is preserved during amplification only when the signal linewidth is much narrower than the Brillouin linewidth of the amplifier. If the signal linewidth is near or above the Brillouin linewidth, the frequency shift of the amplified signal with respect to the pump will be close to the Brillouin shift of the amplifier, and will be independent of the frequency shift of the input signal.

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7

Barmala, Ehsan. "Design and simulate a doherty power amplifier using GaAs technology for telecommunication applications." Indonesian Journal of Electrical Engineering and Computer Science 15, no. 2 (August 1, 2019): 845. http://dx.doi.org/10.11591/ijeecs.v15.i2.pp845-854.

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In this paper, a Doherty power amplifier was designed and simulated at 2.4 GHz central frequency which has high efficiency. A Doherty power amplifier is a way to increase the efficiency in the power amplifiers. OMMIC ED02AH technology and PHEMT transistors, which is made of gallium arsenide, have been used in this simulation. The Doherty power amplifier unique feature is its simple structure which is consisting of two parallel power amplifiers and transmission lines. In order to integrate the circuit, the Doherty power transmission amplifier lines were implemented using an inductor and capacitive components. Also, the Wilkinson power divider is used on the chip input. To improve the efficiency, the auxiliary amplifier dimensions is selected enlarge and the further input power is allocated it by the power divider. A parallel R-C circuit has been used at the input of transistors to improve their stability. Simulation results show that the Doherty power amplifier has 17.2 dB output power gain, 23 dBm maximum output power, and its output power P1dB =22.6dBm at compression point -1 dB, also, its maximum efficiency is 55.5%.

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8

Menduni, Giansergio, Angelo Sampaolo, Pietro Patimisco, Marilena Giglio, Stefano Dello Russo, Andrea Zifarelli, Arianna Elefante, et al. "Front-End Amplifiers for Tuning Forks in Quartz Enhanced PhotoAcoustic Spectroscopy." Applied Sciences 10, no. 8 (April 24, 2020): 2947. http://dx.doi.org/10.3390/app10082947.

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A study of the front-end electronics for quartz tuning forks (QTFs) employed as optoacoustic transducers in quartz-enhanced photoacoustic spectroscopy (QEPAS) sensing is reported. Voltage amplifier-based electronics is proposed as an alternative to the transimpedance amplifier commonly employed in QEPAS experiments. The possibility to use differential input/output configurations with respect to a single-ended configuration has also been investigated. Four different architectures have been realized and tested: a single-ended transimpedance amplifier, a differential output transimpedance amplifier, a differential input voltage amplifier and a fully differential voltage amplifier. All of these amplifiers were implemented in a QEPAS sensor operating in the mid-IR spectral range. Water vapor in ambient air has been selected as the target gas species for the amplifiers testing and validation. The signal-to-noise ratio (SNR) measured for the different configurations has been used to compare the performances of the proposed architectures. We demonstrated that the fully differential voltage amplifier allows for a nearly doubled SNR with respect to the typically used single-ended transimpedance amplifier.

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9

Woestenburg, E. E. M. "Noise properties of balanced amplifier configurations." International Journal of Microwave and Wireless Technologies 3, no. 1 (February 2011): 67–75. http://dx.doi.org/10.1017/s1759078711000018.

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This paper analyzes the noise properties of balanced amplifier configurations in terms of noise waves and discusses the effect of various amplifier configurations on the noise and signal parameters. It shows how the noise generated in the load on the input coupler of a balanced amplifier deteriorates the amplifiers noise resistance parameter with respect to that of its component amplifiers. The properties of two new balanced amplifier configurations will be discussed, which enable the reduction or elimination of this deterioration.

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10

Jurnal, Redaksi Tim. "PERANCANGAN RANGKAIAN PENGUAT DAYA DENGAN TRANSISTOR." Sutet 7, no. 2 (November 27, 2018): 88–92. http://dx.doi.org/10.33322/sutet.v7i2.81.

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The power amplifier circuit is a circuit used to amplify or magnify input signals. The use of a transistor as an amplifier is that the current on the base is used to control the larger current given to the collector through the transistor. The small current change on the controlling base is what is called a large change in the current flowing from the collector to the emitter. The advantages of the amplifier transistors can not only amplify the signal, but these transistors can also be used as current amplifiers, voltage amplifiers and power amplifiers.

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11

Ibrahim, Siti Azlida, Amilia Mansoor, Tuan Ainin Sofea Tuan Mohd Marzuki, Nasr Y. M. Omar, and Hairul Azhar Abdul Rashid. "Comparison of 1480 nm and 980 nm-pumped Gallium-Erbium fiber amplifier." F1000Research 10 (September 8, 2021): 251. http://dx.doi.org/10.12688/f1000research.50952.2.

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Background: One way to reduce the length of the gain medium in Erbium-Doped Fiber Amplifier (EDFA) is by doping the fiber core with a high concentration of Erbium. However, this method caused ion clustering effects, which limits the EDFA’s efficiency. In this research, the use of Gallium as a new co-dopant in erbium-doped silica fiber is explored. Methods: The new fiber, namely Gallium co-doped Erbium fiber (Ga-EDF), is used as a gain medium in an optical fiber amplifier setup. A 2-meter length of the Ga-EDF fiber was used in a single pass configuration with a forward pumping scheme at 150 mW pump power. The Ga-EDF amplifier's gain and noise figure while pumping at 980 nm and 1480 nm were compared. The amplifier's performance was evaluated as the input signal power varied between -30 dBm to 3 dBm, over the wavelength range of 1520 nm to 1580 nm. Results: The 980 nm-pumped Ga-EDF amplifier achieved the maximum small-signal gain of 22.45 dB and the corresponding noise figure of 5.71 dB at the input signal wavelength of 1535 nm. Meanwhile, the 1480 nm-pumped Ga-EDF amplifier attained the maximum small-signal gain of 20.83 dB and the corresponding noise figure of 5.09 dB at the input signal wavelength of 1550 nm. At the input signal power below -20 dBm and the wavelength range 1520 nm to 1547 nm, the Ga-EDF performs better when pumped at 980 nm. Their performance is comparable at the input signal wavelength range between 1547 nm to 1580 nm. At the input signal power above -20 dBm, the 1480 nm-pumped Ga-EDF outperformed the 980 nm-pumped amplifier. Conclusions: The overall performance indicates that the gain saturation point of the 1480 nm-pumped amplifier is higher than the 980 nm-pumped.

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12

Ibrahim, Siti Azlida, Amilia Mansoor, Tuan Ainin Sofea Tuan Mohd Marzuki, Nasr Y. M. Omar, and Hairul Azhar Abdul Rashid. "Comparison of 1480 nm and 980 nm-pumped Gallium-Erbium fiber amplifier." F1000Research 10 (March 29, 2021): 251. http://dx.doi.org/10.12688/f1000research.50952.1.

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Background: One way to reduce the length of the gain medium in Erbium-Doped Fiber Amplifier (EDFA) is by doping the fiber core with a high concentration of Erbium. However, this method caused ion clustering effects, which limits the EDFA’s efficiency. In this research, the use of Gallium as a new co-dopant in erbium-doped silica fiber is explored. Methods: The new fiber, namely Gallium co-doped Erbium fiber (Ga-EDF), is used as a gain medium in an optical fiber amplifier setup. A 2-meter length of the Ga-EDF fiber was used in a single pass configuration with a forward pumping scheme at 150 mW pump power. The Ga-EDF amplifier's gain and noise figure while pumping at 980 nm and 1480 nm were compared. The amplifier's performance was evaluated as the input signal power varied between -30 dBm to 3 dB, over the wavelength range of 1520 nm to 1580 nm. Results: The 980 nm-pumped Ga-EDF amplifier achieved the maximum small-signal gain of 22.45 dB and the corresponding noise figure of 5.71 dB at the input signal wavelength of 1535 nm. Meanwhile, the 1480 nm-pumped Ga-EDF amplifier attained the maximum small-signal gain of 20.83 dB and the corresponding noise figure of 5.09 dB at the input signal wavelength of 1550 nm. At the input signal power below -20 dBm and the wavelength range 1520 nm to 1547 nm, the Ga-EDF performs better when pumped at 980 nm. Their performance is comparable at the input signal wavelength range between 1547 nm to 1580 nm. At the input signal power above -20 dBm, the 1480 nm-pumped Ga-EDF outperformed the 980 nm-pumped amplifier. Conclusions: The overall performance indicates that the gain saturation point of the 1480 nm-pumped amplifier is higher than the 980 nm-pumped.

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13

Kim, D. J., and C. Kim. "A parallel input composite transimpedance amplifier." Review of Scientific Instruments 89, no. 1 (January 2018): 014705. http://dx.doi.org/10.1063/1.5020050.

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14

Scott, R. N., and D. F. Lovely. "Amplifier input impedances for myoelectric control." Medical & Biological Engineering & Computing 24, no. 5 (September 1986): 527–30. http://dx.doi.org/10.1007/bf02443970.

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15

Deepika, G., and K. S. Rao. "A Low Power, Low Noise Amplifier for Recording Neural Signals." IAES International Journal of Artificial Intelligence (IJ-AI) 6, no. 1 (March 1, 2017): 18. http://dx.doi.org/10.11591/ijai.v6.i1.pp18-25.

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The design of a low power amplifier for recording EEG signals is presented. The low noise design techniques are used in this design to achieve low input referred noise that is near the theoretical limit of any amplifier using a differential pair as input stage. To record the neural spikes or local field potentials (LFP’s) the amplifier’s bandwidth can be adjusted. In order to reject common-mode and power supply noise differential input pair need to be included in the design. The amplifier achieved a gain of 53.7dB with a band width of 0.5Hz to1.1 kHz and input referred noise measured as 357 nVrms operated with a supply voltage of 1.0V. The total power consumed is around 3.19µW. When configured to record neural signals the gain measured is 54.3 dB for a bandwidth of 100 Hz and the input referred noise is 1.04µ Vrms. The amplifier was implemented in 180nm technology and simulated using Cadence Virtuoso.

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16

Glas, G. O., and J. G. Zola. "Input resistances of the single-input active-load differential amplifier." IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 41, no. 1 (1994): 60–63. http://dx.doi.org/10.1109/81.260223.

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17

Bakerenkov, A. S., V. S. Pershenkov, A. V. Solomatin, V. V. Belyakov, and V. V. Shurenkov. "Radiation Degradation Modeling of Bipolar Operational Amplifier Input Offset Voltage in LTSpice IV." Applied Mechanics and Materials 565 (June 2014): 138–41. http://dx.doi.org/10.4028/www.scientific.net/amm.565.138.

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Integrated circuits are used in electronic equipment of spaceships. Therefore, they are impacted by ionizing radiation during space mission. It leads to electronic equipment failures. At present operational amplifiers are base elements of analog electronic devices. Radiation impact leads to degradation of operational amplifiers input stages. Input bias current increasing and input offset voltage drifts are the results of ionizing radiation expose of operational amplifiers. Therefore, space application electronic equipment fails after accumulation of limit dose. It isn’t difficult to estimate radiation degradation of input bias currents of bipolar operational amplifiers, but estimation of dose dependence of input offset voltage drift is more complex issue. Schematic modeling technique based on Gummel–Poon transistor model for estimation of input offset voltage drift produced by space radiation impact was experimentally verified for LM324 operational amplifier and presented in this work. Radiation sensitive parameters of Gummel–Poon model were determined using 2N2907 bipolar pnp transistor.

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18

Shukla, Sachchida Nand, Syed Shamroz Arshad, and Geetika Srivastava. "NPN Sziklai pair small-signal amplifier for high gain low noise submicron voltage recorder." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 1 (March 1, 2022): 11. http://dx.doi.org/10.11591/ijpeds.v13.i1.pp11-22.

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Small signal-to-noise ratio (SNR) and multiple noise sources, coupled with very weak signal amplitudes of bio signals make brain-computer interface (BCI) application studies a challenging task. The front-end recorder amplifiers receive very-weak signal (few μV) from high impedance electrodes and for efficient processing of such weak and low frequency (<1 kHz) signals a high gain amplifier with very low operating voltage and low total harmonic distortion (THD) is required. Existing amplifiers suffer from problem of high non-linearity and low common mode rejection. A good sense amplifier at predeceasing stage can solve this problem. Utilizing very high amplification factor of Sziklai Pair, this paper proposes two circuit topologies of common-emitter and common-collector negative-positive-negative (NPN) Sziklai Pair small signal amplifiers suitable for use in preamplifier stages of such signal acquisition circuit. Present study provides broad-spectrum of analysis of these amplifiers covering effect of additional biasing resistance RA, variation of ‘ideal forward maximum beta’ β, temperature dependency, noise sensitivity and phase variation. The tunable capability of first topology makes it a suitable candidate in wide variety of other applications. The first amplifier operates on very low input voltage range (0.1μV-6mV) whereas the second amplifier works on 100 μV-11 mV range of input voltage.

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19

Magnuski, Mirosław, Maciej Surma, and Dariusz Wójcik. "Broadband Input Block of Radio Receiver for Software-Defined Radio Devices." International Journal of Electronics and Telecommunications 60, no. 3 (October 28, 2014): 233–38. http://dx.doi.org/10.2478/eletel-2014-0029.

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Abstract In the paper a cost-effective input block of the SDR receiver for 0.9 — 2.4 GHz frequency band built of capacitive-tuned selective amplifier and broadband Vivaldi antenna is presented. The applied selective amplifier consists of three identical sections of tunable filters and two stages of monolithic broadband amplifiers. The single filter section proposed by the authors, due to its ability to absorb parasitic inductances of varicap diodes, simplifies usage of encapsulated varicap diodes in design of tunable in broad band selective filters dedicated to input stages of the receivers. Moreover, proposed filter section has small variation of in-band insertion loss in comparison to varicap-tuned filters built of coupled transmission lines which are commonly applied in input blocks of the microwave receivers. The described selective amplifier could be easily integrated on a single substrate with the Vivaldi antenna which is a cost effective way of fabrication of the tunable in broad band input block of a receiver that has desired gain, selectivity and directivity of the antenna.

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20

Oki, Daiki, Satoru Kawauchi, Cong Bing Li, Masataka Kamiyama, Seiichi Banba, Toru Dan, Nobuo Takahashi, and Haruo Kobayashi. "A Power-Efficient Noise Canceling Technique Using Signal-Suppression Feed-Forward for Wideband LNAs." Key Engineering Materials 643 (May 2015): 109–16. http://dx.doi.org/10.4028/www.scientific.net/kem.643.109.

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This paper presents a power-efficient noise-canceling technique based on the feed-forward amplifiers, considering a fundamental tradeoff between noise figure (NF) and power consumption in the design of wide-band amplifiers. By suppressing the input signal of the noise cancellation amplifier, the nonlinear effect on the amplifier can be reduced, as well as the power consumption can be smaller. Furthermore, as a lower gain of the noise-canceling sub-amplifier can be achieved simultaneously, further reduction of the power consumption becomes possible. The verification of the proposed technique is conducted with Spectre simulation using 90nm CMOS process.

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21

Feldkord, Sven, Marco Reit, and Wolfgang Mathis. "Implementation of a digital evaluation platform to analyze bifurcation based nonlinear amplifiers." Advances in Radio Science 14 (September 28, 2016): 47–50. http://dx.doi.org/10.5194/ars-14-47-2016.

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Abstract. Recently, nonlinear amplifiers based on the supercritical Andronov–Hopf bifurcation have become a focus of attention, especially in the modeling of the mammalian hearing organ. In general, to gain deeper insights in the input-output behavior, the analysis of bifurcation based amplifiers requires a flexible framework to exchange equations and adjust certain parameters. A DSP implementation is presented which is capable to analyze various amplifier systems. Amplifiers based on the Andronov–Hopf and Neimark–Sacker bifurcations are implemented and compared exemplarily. It is shown that the Neimark–Sacker system remarkably outperforms the Andronov–Hopf amplifier regarding the CPU usage. Nevertheless, both show a similar input-output behavior over a wide parameter range. Combined with an USB-based control interface connected to a PC, the digital framework provides a powerful instrument to analyze bifurcation based amplifiers.

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22

Kharis, Muhamad, Dhidik Prastiyanto, and Suryono Suryono. "Perbandingan Efisiensi Daya Penguat Audio Kelas AB dengan Penguat Audio Kelas D untuk Keperluan Sound System Lapangan." Jurnal Teknik Elektro 10, no. 2 (December 19, 2018): 54–58. http://dx.doi.org/10.15294/jte.v10i2.11183.

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Class AB audio amplifiers are commonly used but the efficiency is 50%. While the efficiency of class D audio amplifiers is 90% but are rarely used. The purpose of this research is to know how much the power efficiency of field sound system between 1000 watts class AB amplifier and 900 watts class D amplifier. This study is a comparative study that compares different variables with the same sample. The results of power efficiency are obtained from the percentage comparison between the output power and the input power of each audio amplifier. The power efficiency of class D audio amplifiers with IRS D900 type larger than class AB audio amplifiers with Apex B500 type. The efficiency value of class D audio amplifiers at the highest output power reaches 87% while class AB audio amplifiers are only 73%.

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23

Palmisano, G., and S. Pennisi. "CMOS single-input differential-output amplifier cells." IEE Proceedings - Circuits, Devices and Systems 150, no. 3 (2003): 194. http://dx.doi.org/10.1049/ip-cds:20030352.

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24

Jefferts, Steven R., and F. L. Walls. "A very low‐noise FET input amplifier." Review of Scientific Instruments 60, no. 6 (June 1989): 1194–96. http://dx.doi.org/10.1063/1.1140285.

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25

Persson, Daniel, Thomas Eriksson, and Erik G. Larsson. "Amplifier-Aware Multiple-Input Single-Output Capacity." IEEE Transactions on Communications 62, no. 3 (March 2014): 913–19. http://dx.doi.org/10.1109/tcomm.2014.011114.130337.

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26

D'Agostino, Stefano, and Claudio Paoloni. "Power distributed amplifier with input-output combiners." Microwave and Optical Technology Letters 7, no. 7 (May 1994): 312–15. http://dx.doi.org/10.1002/mop.4650070706.

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27

Fiori, F. "Operational amplifier input stage robust to EMI." Electronics Letters 37, no. 15 (2001): 930. http://dx.doi.org/10.1049/el:20010651.

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28

Liu, Ling, Song Ye, Weimin Wang, and Wenying Ma. "A Compact 60GHz Power Amplifier in 65nm CMOS Technology." Journal of Physics: Conference Series 2221, no. 1 (May 1, 2022): 012037. http://dx.doi.org/10.1088/1742-6596/2221/1/012037.

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Abstract A compact 60GHz power amplifier chip in 65nm CMOS technology of three-stage common source structure is presented. The first two amplifiers offer sufficient gain to pre-amplify the small input power. The third stage amplifier uses two sets of differential pairs to achieve power synthesis. On-chip transformer coupling is adopted to realize inter-stage impedance matching as well as input and output matching. The compact structure of on-chip transformer can reduce the chip size and improve the integration degree. The measured small signal gain at 60GHz of 22.3dB, the saturation power of 20.2dBm, the output P-1dB of 17.3dBm, the PAE of 14%, and the core area is 0.19mm2. The power amplifier can be used in high-speed short-range wireless communication system to enhance communication data transmission capacity.

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29

Seo, Heesong, Hyejeong Song, Changjoon Park, Jehyung Yoon, Inyoung Choi, and Bumman Kim. "Blocker filtering low-noise amplifier for SAW-less Bluetooth receiver system." International Journal of Microwave and Wireless Technologies 1, no. 5 (October 2009): 447–52. http://dx.doi.org/10.1017/s1759078709990699.

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A 2.4 GHz CMOS blocker filtering low-noise amplifier (BF-LNA) suitable for Bluetooth™ application is presented. The circuit employs a differential amplifier topology with a current mirror active load and a notch filter. Each path amplifies differentially with the common mode input signal, but there is a notch filter rejecting only the wanted signal at one path. By subtracting the two signals from each path, the large interferers are rejected and only the wanted signal is amplified. Therefore, it becomes a narrow-band amplifier with blocker filtering capability, realizing a receiver system without need of the off-chip SAW filter. The BF-LNA is designed using a 0.13-μm CMOS process. The measured performances are a gain of 11.4 dB, and a noise figure of 1.85 dB. Attenuation levels at 400 MHz apart from the target frequency are −13 and −29 dBc at each sideband. The P1dB,in and IIP3 are −8.2 and 1.46 dBm, respectively. The proposed BF-LNA can reject large interferers at the front-end of the receiver system with a good noise figure.

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Wang, Teng, Wantao Li, Roberto Quaglia, and Pere L. Gilabert. "Machine-Learning Assisted Optimisation of Free-Parameters of a Dual-Input Power Amplifier for Wideband Applications." Sensors 21, no. 8 (April 17, 2021): 2831. http://dx.doi.org/10.3390/s21082831.

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This paper presents an auto-tuning approach for dual-input power amplifiers using a combination of global optimisation search algorithms and adaptive linearisation in the optimisation of a multiple-input power amplifier. The objective is to exploit the extra degrees of freedom provided by dual-input topologies to enhance the power efficiency figures along wide signal bandwidths and high peak-to-average power ratio values, while being compliant with the linearity requirements. By using heuristic search global optimisation algorithms, such as the simulated annealing or the adaptive Lipschitz Optimisation, it is possible to find the best parameter configuration for PA biasing, signal calibration, and digital predistortion linearisation to help mitigating the inherent trade-off between linearity and power efficiency. Experimental results using a load-modulated balanced amplifier as device-under-test showed that after properly tuning the selected free-parameters it was possible to maximise the power efficiency when considering long-term evolution signals with different bandwidths. For example, a carrier aggregated a long-term evolution signal with up to 200 MHz instantaneous bandwidth and a peak-to-average power ratio greater than 10 dB, and was amplified with a mean output power around 33 dBm and 22.2% of mean power efficiency while meeting the in-band (error vector magnitude lower than 1%) and out-of-band (adjacent channel leakage ratio lower than −45 dBc) linearity requirements.

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31

De Lima, Jader A. "A Compact Low-Distortion Low-Power Instrumentation Amplifier." Journal of Integrated Circuits and Systems 5, no. 1 (November 21, 2010): 33–41. http://dx.doi.org/10.29292/jics.v5i1.308.

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A CMOS instrumentation amplifier based on a simple topology that comprises a double-input Gm-stage and a low-distortion class-AB output stage is presented. Sub-threshold design techniques are applied to attain high figures of differential-gain and rejection parameters. Analyses of input-referred noise and CMRR are comprehensively carried out and their dependence on design parameters determined. The prototype was fabricated in standard n-well CMOS process. For 5V-rail-to-rail supply and bias current of 100nA, stand-by consumption is only 16μW. Low-frequency parameters are ADM=86dB, CMRR=89.3dB, PSRR+=87dB, PSRR-=74dB. For a 6.5pF-damping capacitor, ΦM=73º and GBW=47KHz. The amplifier exhibits a THD of –64.5dB @100Hz for a 1Vpp-output swing. Input-noise spectral density is 5.2μV/ Hz @1Hz and 1.9μV/ Hz @10Hz, which gives an equivalent input-noise of 37.6μV, over 1Hz-200Hz bandwidth. This circuit may be employed for low-frequency, low-distortion signal processing, advantageously replacing the conventional 3-opamp approach for instrumentation amplifiers.

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32

Alraho, Senan, and Andreas König. "Wide input range, fully-differential indirect current feedback instrumentation amplifier for self-x sensory systems / Symmetrischer Instrumentierungsverstärker mit indirekter Stromgegenkopplung und hoher Eingangsignalspanne für integrierte Sensorsysteme mit Self-x-Eigenschaften." tm - Technisches Messen 86, s1 (September 1, 2019): 62–66. http://dx.doi.org/10.1515/teme-2019-0054.

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AbstractThis paper research presents the design of wide input range indirect current feedback-instrumentation amplifier (CFIA). In order to extend the input range without sacrificing the amplifier performance, the negative feedback is applied to the source coupled differential pairs inputs. The feedback network and the biasing current can be programmed to work at different values to meet different signal conditions or to self-correct the drift in the amplifier properties. The simulated input range Vin; P-P=1.6 V with total harmonic distortion of 0.93 % at 5 MHz frequency. Thus the proposed CFIA is very suitable to read the high speed and high common mode range TMR differential voltage sensor signal. The circuit is implemented using the CMOS 0.35 μm technology from Austriamicrosystems (AMS) and by using Cadence Virtuoso design tools.

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33

Chia, Andy, Michal Hajdušek, Rosario Fazio, Leong-Chuan Kwek, and Vlatko Vedral. "Phase diffusion and the small-noise approximation in linear amplifiers: Limitations and beyond." Quantum 3 (November 4, 2019): 200. http://dx.doi.org/10.22331/q-2019-11-04-200.

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The phase of an optical field inside a linear amplifier is widely known to diffuse with a diffusion coefficient that is inversely proportional to the photon number. The same process occurs in lasers which limits its intrinsic linewidth and makes the phase uncertainty difficult to calculate. The most commonly used simplification is to assume a narrow photon-number distribution for the optical field (which we call the small-noise approximation). For coherent light, this condition is determined by the average photon number. The small-noise approximation relies on (i) the input to have a good signal-to-noise ratio, and (ii) that such a signal-to-noise ratio can be maintained throughout the amplification process. Here we ask: For a coherent input, how many photons must be present in the input to a quantum linear amplifier for the phase noise at the output to be amenable to a small-noise analysis? We address these questions by showing how the phase uncertainty can be obtained without recourse to the small-noise approximation. It is shown that for an ideal linear amplifier (i.e. an amplifier most favourable to the small-noise approximation), the small-noise approximation breaks down with only a few photons on average. Interestingly, when the input strength is increased to tens of photons, the small-noise approximation can be seen to perform much better and the process of phase diffusion permits a small-noise analysis. This demarcates the limit of the small-noise assumption in linear amplifiers as such an assumption is less true for a nonideal amplifier.

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34

Kim, Hyungseup, Yongsu Kwon, Donggeun You, Hyun-Woong Choi, Seong Hyun Kim, Hyunwoo Heo, Choul-Young Kim, Hi-Deok Lee, and Hyoungho Ko. "A 5.43 nV/√Hz Chopper Operational Amplifier Using Lateral PNP Input Stage with BJT Current Mirror Base Current Cancellation." Applied Sciences 10, no. 23 (November 25, 2020): 8376. http://dx.doi.org/10.3390/app10238376.

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This paper presents a low-noise chopper operational amplifier using a lateral PNP input stage with bipolar junction transistor (BJT) current mirror base current cancellation. The BJT has a lower noise characteristic than the metal–oxide–semiconductor (MOS) transistor, where low-noise characteristics can be achieved by implanting the BJT to the input stage of the amplifier; however, the base current of the BJT input stage causes low input impedance of the amplifier. The BJT current mirror base current cancellation technique is implemented to enhance the input impedance of the BJT input stage by canceling the base current. BJT current mirror base current cancellation is implemented with a simple scheme using NPN transistors with deep n-well in a generic complementary metal–oxide–semiconductor (CMOS) process. For further noise reduction with the BJT input stage, a chopper amplifier scheme is adopted to reduce low-frequency components such as 1/f noise terms in the low-frequency range. The prototype chip is fabricated in a 0.18-μm CMOS process. The active area of the prototype amplifier is 0.213 mm2. The measured input-referred noise is 5.43 nV/√Hz. The measured input base current of the amplifier with base current cancellation is 67.971 nA. The total amplifier current consumption is 278.3 μA, with a power supply of 3.3 V.

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35

Mallick, Bandana, Bibhu Prasad, and Dr Krishna Chandra Patra. "Design of a Hybrid Optical amplifier for 64 DWDM Channels network by using EDFA and Raman Amplifier." International Journal of Electrical and Electronics Research 5, no. 4 (December 31, 2017): 18–23. http://dx.doi.org/10.37391/ijeer.050401.

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In this paper a hybrid amplifier EDFA-RAMAN DWDM transmission system is proposed and demonstrated. A new hybrid two-stage optical fiber amplifier for dense wavelength division multiplexing (DWDM) network is observed. The hybrid amplifier is cascaded erbium- doped fiber amplifiers (EDFA) & Raman amplifier which provide a nearly flat gain over 80 nm. The hybrid amplifier has been modeled using an Optic-System version 14 on a DWDM transmission. In this paper we compare Q-factor at different input power i.e. at 0db and at 10 db. Here two different types of apodized function (Uniform & Gaussian) are selected as fiber Bragg grating parameters and system performance is analyzed. Performance of the system is analyzed by using BER analyzer.

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36

Ballouk, ABDO Zouhair, Fawaz Mofdi, and Salem Ibrahim. "Design narrow-band frequency amplifier (1.5GHz -1.6GHz) based on InGaP Heterojunction Bipolar Transistor (HBT) and GaAs HBT." Journal of Engineering 27, no. 2 (February 1, 2021): 13–26. http://dx.doi.org/10.31026/j.eng.2021.02.02.

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The research aims to design a narrow-band frequency drive amplifier (1.5GHz -1.6GHz), which is used to boost the transmitter amplifier's input signal or amplify the GPS, GlONASS signals at the L1 band. The Power Amplifier printed circuit board (PCB) prototype was designed using InGaP HBT homogeneous technology transistor and GaAs Heterojunction Bipolar Transistor (HBT) transistor. Two models have been compared; one of the models gave 16dB gain, and the other gave 23dB when using an input power signal (-15dBm). The PCB consumes 2.4W of power and has a physical dimension of 11 x 4 cm.

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37

Dos Reis, Carlos Alberto. "Review of Offset and Noise Reduction Techniques for CMOS." Journal of Integrated Circuits and Systems 17, no. 1 (April 30, 2022): 1–9. http://dx.doi.org/10.29292/jics.v17i1.572.

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Input referred offset voltage, 1/f noise and thermal noise are amplifier properties that directly restrict the ability of discerning signals beyond a certain limit. The ever increasing spectrum of applications of integrated circuits and trends in the semiconductor market have pushed engineers to design circuits with successively lower voltage, less power consumption, higher dynamic range, accurate gain and wider bandwidth, preferably altogether. Amplifiers input errors are key properties, which have to be minimized, however with the least negative impact upon the other equally important properties. This paper reviews some the most relevant techniques applied to reducing input errors of CMOS amplifiers aiming at to provide a condensed set of information that can help designers at the starting point of a new design of a precision analog circuit. The focus in all cases that were selected to be studied in this review work was the reduction of offset and noise regardless of any commitment of the used technique with other characteristics of the amplifier and its impacts on figures of merit like NEF and PEF.

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38

Spinelli, Enrique Mario, Marcelo Alejandro Haberman, Federico Nicolas Guerrero, and Pablo Andres Garcia. "A High Input Impedance Single-Ended Input to Balanced Differential Output Amplifier." IEEE Transactions on Instrumentation and Measurement 69, no. 4 (April 2020): 1682–89. http://dx.doi.org/10.1109/tim.2019.2915776.

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39

Rachakh, Amine, Larbi El Abdellaoui, Jamal Zbitou, Ahmed Errkik, Abdelali Tajmouati, and Mohamed Latrach. "A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (October 1, 2018): 3882. http://dx.doi.org/10.11591/ijece.v8i5.pp3882-3889.

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Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the power amplifier and between the load and the output of the power amplifier. A "T" matching technique is used at the input and the output sides of transistor for assure in band desired that this circuit without reflections and to obtain a maximum power gain. The proposed power amplifier for microwave ISM applications is designed, simulated and optimized by employing Advanced Design System (ADS) software by Agilent. The PA shows good performances in terms of return loss, output power, power gain and stability; the circuit has an input return loss of -38dB and an output return loss of -33.5dB. The 1-dB compression point is 8.69dBm and power gain of the PA is 19.4dBm. The Rollet's Stability measure B1 and the stability factor K of the amplifier is greater than 0 and 1 respectively, which shows that the circuit is unconditionally stable. The total chip size of the PA is 73.5× 36 mm2.

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40

Trzpil-Jurgielewicz, Beata, Władysław Dąbrowski, and Paweł Hottowy. "Analysis and Reduction of Nonlinear Distortion in AC-Coupled CMOS Neural Amplifiers with Tunable Cutoff Frequencies." Sensors 21, no. 9 (April 30, 2021): 3116. http://dx.doi.org/10.3390/s21093116.

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Integrated CMOS neural amplifiers are key elements of modern large-scale neuroelectronic interfaces. The neural amplifiers are routinely AC-coupled to electrodes to remove the DC voltage. The large resistances required for the AC coupling circuit are usually realized using MOSFETs that are nonlinear. Specifically, designs with tunable cutoff frequency of the input high‑pass filter may suffer from excessive nonlinearity, since the gate-source voltages of the transistors forming the pseudoresistors vary following the signal being amplified. Consequently, the nonlinear distortion in such circuits may be high for signal frequencies close to the cutoff frequency of the input filter. Here we propose a simple modification of the architecture of a tunable AC-coupled amplifier, in which the bias voltages Vgs of the transistors forming the pseudoresistor are kept constant independently of the signal levels, what results in significantly improved linearity. Based on numerical simulations of the proposed circuit designed in 180 nm technology we analyze the Total Harmonic Distortion levels as a function of signal frequency and amplitude. We also investigate the impact of basic amplifier parameters—gain, cutoff frequency of the AC coupling circuit, and silicon area—on the distortion and noise performance. The post-layout simulations of the complete test ASIC show that the distortion is very significantly reduced at frequencies near the cutoff frequency, when compared to the commonly used circuits. The THD values are below 1.17% for signal frequencies 1 Hz–10 kHz and signal amplitudes up to 10 mV peak-to-peak. The preamplifier area is only 0.0046 mm2 and the noise is 8.3 µVrms in the 1 Hz–10 kHz range. To our knowledge this is the first report on a CMOS neural amplifier with systematic characterization of THD across complete range of frequencies and amplitudes of neuronal signals recorded by extracellular electrodes.

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41

Baranov, Pavel, Ivan Zatonov, and Bien Bui Duc. "Dual Phase Lock-In Amplifier with Photovoltaic Modules and Quasi-Invariant Common-Mode Signal." Electronics 11, no. 9 (May 9, 2022): 1512. http://dx.doi.org/10.3390/electronics11091512.

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In measuring small voltage deviations of about 1 µV and lower, it is important to separate useful signals from noise. The measurement of small voltage deviations between the amplitudes of two AC signals in wide frequency and voltage ranges, is performed by using lock-in amplifiers with the differential input as a comparator (null-indicator). The resolution and measurement accuracy of lock-in amplifiers is largely determined by the common-mode rejection ratio in their measuring channel. This work presents a developed differential signal recovery circuit with embedded photovoltaic modules, which allows implementing the dual phase lock-in amplifier with the differential input and quasi-invariant common-mode signal. The obtained metrological parameters of the proposed dual phase analog lock-in amplifier prove its applicability in comparing two signal amplitudes of 10√2 µV to 10√2 V in the frequency range of 20 Hz to 100 kHz with a 10 nV resolution. The proposed dual phase analog lock-in amplifier was characterized by a 130 to 185 dB CMRR in the frequency range up to 100 kHz with 20 nV/√Hz white noise.

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42

Liang, Ji Xiu, and Shou Kui Li. "Audio Power Amplifier Design and Debugging." Applied Mechanics and Materials 651-653 (September 2014): 2269–72. http://dx.doi.org/10.4028/www.scientific.net/amm.651-653.2269.

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The modern demands for hearing level is getting higher and higher, so the authenticity of stereo sound quality demand is higher and higher, the stereo power amplifier is integrated circuit TDA2030A primarily composed of stereo power amplifier, it USES the typical power amplification circuit, with less distortion, peripheral components, high stability, wide frequency response range, high fidelity, the advantages of large power, at the same time adopt SiYun put GL324A of input audio signal processing and high, bass, and thus more output sound of quality guarantee. Articles of amplifiers made simple introduction, and give the detailed design and debug program.

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43

Amin, Muhammad, Neni Mulyani, and Uswatun Hasanah. "PELATIHAN PERANCANGAN AMPLIFIER 12 VOLT PADA SMK NEGERI 5 KOTA TANJUNG BALAI." Jurdimas (Jurnal Pengabdian Kepada Masyarakat) Royal 1, no. 2 (July 5, 2018): 57–62. http://dx.doi.org/10.33330/jurdimas.v1i2.112.

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Abstract: The design of the 12 V amplifier module which was held at SMK Negeri 5 in the city of Tanjungbalai, received from 80 students whose dedication was conducted, more than 75 students successfully completed the 12 V amplifier assembly project and the category was successful, and 3 students were only able to reinforce the transfer project. but it can not be lit and 2 more students can not finish to the end. The 12 V amplifier module design training aims to increase the capacity to increase the skills in the practicum field, especially in the field of audio video engineering which is pursued according to the existing majors. The subject matter in service at SMK 5 Tanjungblai, discussing the 12 volt amplifier work system, schematic designer to PCB board, testing electronic components using digital multitester and testing amplifiers using input from the mobile jack and oscilloscope.Keywords: 12 Volt Amplifier, Service, SMK 5 TanjungbalaiAbstrak: Perancangan modul amplifier 12 Volt yang diadakan di SMK Negeri 5 kota tanjungbalai, mendapatai dari 80 siswa yang mengikuti pengabdian yang dilakukan, lebih dari 75 siswa berhasil menyelesikan project perakitan amplifier 12 V dan tergologn kategori berhasil, dan 3 siswa hanya mampu menyelesaikan project amplifier, tetapi tidak bisa menyala dan 2 siswa lagi tidak bisa menyelesaikan sampai akhir. Pelatihan perancangan modul amplifier 12 V, ini bertujuan untuk menambah kompetensi siswa untuk meningkatkan hardskill dibidang praktikum, khususnya dibidang produktif jurusan teknik audio video yang ditekuni sesuai jurusan yang diambil. Pokok bahasan dalam pengabdian di SMK Negeri 5 Tanjungblai, membahas tentang sistem kerja amplifier 12 volt, perancangan scematik ke board PCB , pengujian komponen elektronik dengan menggunakan multitester digital dan pengujian amplifier dengan menggunakan input dari jack handphone dan oscilloscope. Kata Kunci: Amplifier 12 Volt, Pengabdian, SMK Negeri 5 Tanjungbalai

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44

Al-Kofahi, Idrees S., Zaid Albataineh, and Ahmad Dagamseh. "A two-stage power amplifier design for ultra-wideband applications." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 1 (February 1, 2021): 772. http://dx.doi.org/10.11591/ijece.v11i1.pp772-779.

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In this paper, a two-stage 0.18 μm CMOS power amplifier (PA) for ultra-wideband (UWB) 3 to 5 GHz based on common source inductive degeneration with an auxiliary amplifier is proposed. In this proposal, an auxiliary amplifier is used to place the 2nd harmonic in the core amplified in order to make up for the gain progression phenomena at the main amplifier output node. Simulation results show a power gain of 16 dB with a gain flatness of 0.4 dB and an input 1 dB compression of about -5 dBm from 3 to 5 GHz using a 1.8 V power supply consuming 25 mW. Power added efficiency (PAE) of around 47% at 4 GHz with 50 Ω load impedance was also observed.

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45

Wessel, J. G., K. S. Repasky, and J. L. Carlsten. "Enhanced input coupling into a gain-guided amplifier." Physical Review A 54, no. 3 (September 1, 1996): 2408–11. http://dx.doi.org/10.1103/physreva.54.2408.

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46

Ng, K. A., and Yong Ping Xu. "A Compact, Low Input Capacitance Neural Recording Amplifier." IEEE Transactions on Biomedical Circuits and Systems 7, no. 5 (October 2013): 610–20. http://dx.doi.org/10.1109/tbcas.2013.2280066.

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47

Zito, Dome, and Alessandro Fonte. "Dual-Input Pseudo-Switch RF Low Noise Amplifier." IEEE Transactions on Circuits and Systems II: Express Briefs 57, no. 9 (September 2010): 661–65. http://dx.doi.org/10.1109/tcsii.2010.2058491.

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48

Persson, D., T. Eriksson, and E. G. Larsson. "Amplifier-Aware Multiple-Input Multiple-Output Power Allocation." IEEE Communications Letters 17, no. 6 (June 2013): 1112–15. http://dx.doi.org/10.1109/lcomm.2013.043013.130050.

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49

NETZER, YISHAY, and ISRAEL YUVAL. "Ultrasonic AGC amplifier with 60 dB input range." International Journal of Electronics 66, no. 4 (April 1989): 543–49. http://dx.doi.org/10.1080/00207218908925410.

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50

Jang, Haedong, Richard Wilson, Tim Canning, David Seebacher, Christian Schuberth, Bayaner Arigong, Frank Trang, and Simon Ward. "RF-Input Self-Outphasing Doherty–Chireix Combined Amplifier." IEEE Transactions on Microwave Theory and Techniques 64, no. 12 (December 2016): 4518–34. http://dx.doi.org/10.1109/tmtt.2016.2618922.

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