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Автор: Grafiati
Опубліковано: 6 вересня 2023
Оновлено: 25 травня 2024

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1

Guo, Xiaofei, Liwen Zhang, Jun Chen, Xiaohong Zheng, and Lei Zhang. "Gate tunable self-powered few-layer black phosphorus broadband photodetector." Physical Chemistry Chemical Physics 23, no. 1 (2021): 399–404. http://dx.doi.org/10.1039/d0cp05292b.

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Анотація:
Due to the giant Stark effect in few-layer black phosphorus (BP), a self-powered and gate-controlled pure few-layer BP based photodetector device is proposed, which can cover the photodetection range from mid-infrared range (MIR) to far-infrared range (FIR).
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2

Lin, Zhitao, Wenbiao Zhu, Yonghong Zeng, Yiqing Shu, Haiguo Hu, Weicheng Chen, and Jianqing Li. "Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure." Nanomaterials 12, no. 15 (August 3, 2022): 2664. http://dx.doi.org/10.3390/nano12152664.

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Анотація:
Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe2/p-MoTe2) photodetector for high-performance photodetection in the broadband spectral range of 405–2000 nm. Due to the low Schottky barrier contact of the ReSe2/MoTe2 heterojunction, the rectification ratio (RR) of ~102 at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 1011 Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550–2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection.
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3

Wen, Zheng, Guanlin Ke, Fangzhou Yi, and Zhenhua Sun. "The Surface ligands of PbSe Colloidal Quantum Dots Towards the High-Performing Infrared Photodetection." Journal of Physics: Conference Series 2524, no. 1 (June 1, 2023): 012010. http://dx.doi.org/10.1088/1742-6596/2524/1/012010.

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Abstract Lead selenide colloidal quantum dots (PbSe CQDs) have the characteristics of an adjustable band gap, low cost, and easy processing. It is one of the ideal materials for developing infrared photodetectors and has broad application prospects in optical fiber communication, biomedical imaging, national defense, and other fields. Indium gallium zinc oxide (IGZO) is an n-type semiconductor material with high mobility. In this paper, an infrared photodetector with IGZO-PbSe CQDs heterojunction is fabricated, with the PbSe CQDs capped by MPA, TBAI, or EDT. The photodetection performance of these photodetectors is studied and compared, to reveal the best choice of the surface ligand of the PbSe CQDs for the photodetection. This work provides useful and solid knowledge that shall enlighten the optoelectronic application of PbSe CQDs.
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4

Lu, Qin, Li Yu, Yan Liu, Jincheng Zhang, Genquan Han, and Yue Hao. "Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions." Materials 12, no. 16 (August 9, 2019): 2532. http://dx.doi.org/10.3390/ma12162532.

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Анотація:
We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodetection performance at mid-infrared (mid-IR) wavelengths. While it was found that the photoresponsivity is similar to that in a BP photo-transistor, the noise equivalent power and thus the specific detectivity are nearly two orders of magnitude better. These exemplify an attractive platform for practical applications of long wavelength photodetection, as well as provide a new strategy for controlling flicker noise.
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5

Tong, Jinchao, Fei Suo, Junhuizhi Ma, Landobasa Y. M. Tobing, Li Qian, and Dao Hua Zhang. "Surface plasmon enhanced infrared photodetection." Opto-Electronic Advances 2, no. 1 (2019): 18002601–10. http://dx.doi.org/10.29026/oea.2019.180026.

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6

Fernandes, F. M., E. C. F. da Silva, and A. A. Quivy. "Mid-infrared photodetection in an AlGaAs/GaAs quantum-well infrared photodetector using photoinduced noise." Journal of Applied Physics 118, no. 20 (November 28, 2015): 204507. http://dx.doi.org/10.1063/1.4936307.

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7

Yang, Changming, Shiyu Qin, Yan Zuo, Yang Shi, Tong Bie, Ming Shao, and Yu Yu. "Waveguide Schottky photodetector with tunable barrier based on Ti3C2T x /p-Si van der Waals heterojunction." Nanophotonics 10, no. 16 (October 18, 2021): 4133–39. http://dx.doi.org/10.1515/nanoph-2021-0415.

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Анотація:
Abstract MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface. Given the solution-processability and tunable work function, MXene also holds great potential for wide-range photodetection and integrated optics. Here, we demonstrate a waveguide integrated Schottky photodetector based on Ti3C2T x /Si van der Waals heterojunction. Specifically, the barrier of the Schottky photodetector can be adjusted by using simple surface treatment. The work function of the Ti3C2T x is reduced from 4.66 to 4.43 eV after vacuum annealing, and the barrier height of Ti3C2T x /p-Si Schottky junction is correspondingly increased from 0.64 to 0.72 eV, leading to 215 nm working wavelength blue-shift. The photodetector exhibits working wavelength tunability in short-wavelength infrared regions due to the engineered Schottky barrier. To our best knowledge, this is the first demonstration of utilizing MXene in waveguide-integrated photodetection, showing the potential applications for various scenarios thanks to the flexible working wavelength range induced by the tunable barrier.
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8

Tang, Qianying, Fang Zhong, Qing Li, Jialu Weng, Junzhe Li, Hangyu Lu, Haitao Wu, et al. "Infrared Photodetection from 2D/3D van der Waals Heterostructures." Nanomaterials 13, no. 7 (March 24, 2023): 1169. http://dx.doi.org/10.3390/nano13071169.

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An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.
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9

Masoudian Saadabad, Reza, Christian Pauly, Norbert Herschbach, Dragomir N. Neshev, Haroldo T. Hattori, and Andrey E. Miroshnichenko. "Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks." Nanomaterials 11, no. 2 (February 8, 2021): 428. http://dx.doi.org/10.3390/nano11020428.

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Анотація:
Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.
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10

Li, Xinxin, Zhen Deng, Ziguang Ma, Yang Jiang, Chunhua Du, Haiqiang Jia, Wenxin Wang, and Hong Chen. "Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure." Sensors 22, no. 12 (June 16, 2022): 4536. http://dx.doi.org/10.3390/s22124536.

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Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion efficiencies; however, it is plagued with the high dark current. In this paper, we have demonstrated the plasmonic photodetection with dark current suppression to create a Si-based broadband photodetector with enhanced performance in the short-wavelength infrared (SWIR) region. By hybridizing a 3 nm Au layer with the spherical Au nanoparticles (NPs) formed by rapid thermal annealing (RTA) on Si substrate, a well-behaved ITO/Au/Au NPs/n-Si Schottky photodetector with suppressed dark current and enhanced absorption in the SWIR region is obtained. This optimized detector shows a broad detection beyond 1200 nm and a high responsivity of 22.82 mA/W at 1310 nm at −1 V, as well as a low dark current density on the order of 10−5 A/cm2. Such a Si-based plasmon-enhanced detector with desirable performance in dark current will be a promising strategy for realization of the high SNR detector while keeping fabrication costs low.
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11

Okamura, M., and S. Suzuki. "Infrared photodetection using a-Si:H photodiode." IEEE Photonics Technology Letters 6, no. 3 (March 1994): 412–14. http://dx.doi.org/10.1109/68.275503.

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12

Lao, Yan-Feng, A. G. Unil Perera, H. L. Wang, and J. H. Zhao. "GaMnAs for Mid-Wave Infrared Photodetection." IEEE Photonics Technology Letters 28, no. 20 (October 15, 2016): 2261–64. http://dx.doi.org/10.1109/lpt.2016.2585525.

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13

Qiu, Shupeng, Landobasa Y. M. Tobing, Zhengji Xu, Jinchao Tong, Peinan Ni, and Dao-Hua Zhang. "Surface Plasmon Enhancement on Infrared Photodetection." Procedia Engineering 140 (2016): 152–58. http://dx.doi.org/10.1016/j.proeng.2015.10.151.

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14

Tang, Xiaobing, Zhibiao Hao, Lai Wang, Jiadong Yu, Xun Wang, Yi Luo, Changzheng Sun, et al. "Plasmon-Enhanced Hot-Electron Photodetector Based on Au/GaN-Nanopillar Arrays for Short-Wave-Infrared Detection." Applied Sciences 12, no. 9 (April 23, 2022): 4277. http://dx.doi.org/10.3390/app12094277.

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Анотація:
The complex device structure and costly preparation process have hindered the development and application of the GaN-based ultraviolet and infrared (UV–IR) dual-color photodetector. In this work, we designed and prepared an Au/GaN-nanopillar-based hot-electron photodetector that can operate in the short-wave infrared range, well below the GaN bandgap energy. A suitable Schottky barrier height was developed for a higher photo-to-dark current ratio by post-etching annealing. The surface plasmons generated by Au/GaN-nanopillar arrays could effectively improve the light absorption efficiency. As a result, compared with the planar device, the responsivity of the Au/GaN-nanopillar device could be enhanced by about two orders of magnitude. With the advantages of a simple structure and easy preparation, the proposed devices are promising candidates for application in UV–IR dual-color photodetection.
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15

Jin, Yuxuan, and Zefeng Chen. "High gain hot-carrier WSe2 phototransistor with gate-tunable responsivity." Advances in Engineering Technology Research 7, no. 1 (July 26, 2023): 21. http://dx.doi.org/10.56028/aetr.7.1.21.2023.

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Анотація:
Hot-carrier injection at semiconductor/metal interface shows great potentials in infrared photodetection. However, the photoresponsivity of hot-carrier photodetector with diode mode is still limited in the scale of 1 mA/W due to the low injection efficiency of hot carriers and the lack of gain. Here, we demonstrate a high gain hot-carrier WSe2 phototransistor with gate-tunable responsivity. In this device, plasmonic resonances is used to enhance the light absorption of gold nanodisk, which provide hot holes. The hot holes are trapped into WSe2 and recycled in WSe2 channel in lateral direction, which introduce high gain for photodetection. Experiment shows that the photoresponsivity of the device can be over 0.23 A/W with a gain of 270 at the wavelength of 1310 nm. More interestingly, the responsivity of the device can be tuned by gate, which can be used to encode synaptic weights of the sensor pixel.
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16

Ma, B. S., W. J. Fan, Y. X. Dang, W. K. Cheah, W. K. Loke, W. Liu, D. S. Li та ін. "GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24μm". Applied Physics Letters 91, № 5 (30 липня 2007): 051102. http://dx.doi.org/10.1063/1.2767185.

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17

Zhang, Yichen, Qingliang Feng, Rui Hao, and Mingjin Zhang. "Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films." Electronics 11, no. 6 (March 8, 2022): 838. http://dx.doi.org/10.3390/electronics11060838.

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Анотація:
A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS2 films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS2 films, as-fabricated PtS2 field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 107 Jones, and 839 mA/W and 6.1 × 106 Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS2 films.
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18

Vinayakumar, V., S. Shaji, D. Avellaneda, J. A. Aguilar-Martínez, and B. Krishnan. "Copper antimony sulfide thin films for visible to near infrared photodetector applications." RSC Advances 8, no. 54 (2018): 31055–65. http://dx.doi.org/10.1039/c8ra05662e.

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19

Suo, Fei, Jinchao Tong, Xiren Chen, Zhengji Xu, and Dao Hua Zhang. "Hole array enhanced dual-band infrared photodetection." Optics Express 29, no. 5 (February 16, 2021): 6424. http://dx.doi.org/10.1364/oe.415987.

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20

STIFF-ROBERTS, ADRIENNE D. "HYBRID NANOMATERIALS FOR MULTI-SPECTRAL INFRARED PHOTODETECTION." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 165–72. http://dx.doi.org/10.1142/s0129156407004382.

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Анотація:
Quantum dot infrared photodetectors (QDIPs) using quantum dots (QDs) grown by strained-layer epitaxy have demonstrated low dark current, multi-spectral response, high operating temperature, and infrared (IR) imaging. However, achieving near room-temperature, multi-spectral operation is a challenge due to randomness in QD properties. The ability to control dopant incorporation is important since charge carrier occupation influences dark current and IR spectral response. In this work, dopant incorporation is investigated in two classes of QDs; epitaxial InAs/GaAs QDs and CdSe colloidal QDs (CQDs) embedded in MEH-PPV conducting polymers. The long-term goal of this work is to combine these hybrid nanomaterials in a single device heterostructure to enable multi-spectral IR photodetection. Two important results towards this goal are discussed. First, by temperature-dependent dark current-voltage and polarization-dependent Fourier transform IR spectroscopy measurements in InAs/GaAs QDIPs featuring different doping schemes, we have provided experimental evidence for the important contribution of thermally-activated, defect-assisted, sequential resonant tunneling. Second, the enhanced quantum confinement and electron localization in the conduction band of CdSe / MEH-PPV nanocomposites enable intraband transitions in the mid-IR at room temperature. Further, by controlling the semiconductor substrate material, doping type, and doping level on which these nanocomposites are deposited, the intraband IR response can be tuned.
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21

Tong, Jinchao, Yiyang Xie, Peinan Ni, Zhengji Xu, Shupeng Qiu, Landobasa Y. M. Tobing, and Dao-Hua Zhang. "InAs0.91Sb0.09photoconductor for near and middle infrared photodetection." Physica Scripta 91, no. 11 (September 29, 2016): 115801. http://dx.doi.org/10.1088/0031-8949/91/11/115801.

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22

Rao, Gaofeng, Xuepeng Wang, Yang Wang, Peihua Wangyang, Chaoyi Yan, Junwei Chu, Lanxin Xue, et al. "Two‐dimensional heterostructure promoted infrared photodetection devices." InfoMat 1, no. 3 (July 8, 2019): 272–88. http://dx.doi.org/10.1002/inf2.12018.

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23

Liu, Hongmei, Jianqi Zhang, Zhixiang Gao, and Yunlong Shi. "Photodetection of Infrared Photodetector Based on Surrounding Barriers Formed by Charged Quantum Dots." IEEE Photonics Journal 7, no. 3 (June 2015): 1–8. http://dx.doi.org/10.1109/jphot.2015.2432076.

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24

Xiao, Pan, Shi Zhang, Libo Zhang, Jialiang Yang, Chaofan Shi, Li Han, Weiwei Tang, and Bairen Zhu. "Visible Near-Infrared Photodetection Based on Ta2NiSe5/WSe2 van der Waals Heterostructures." Sensors 23, no. 9 (April 29, 2023): 4385. http://dx.doi.org/10.3390/s23094385.

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Анотація:
The increasing interest in two-dimensional materials with unique crystal structures and novel band characteristics has provided numerous new strategies and paradigms in the field of photodetection. However, as the demand for wide-spectrum detection increases, the size of integrated systems and the limitations of mission modules pose significant challenges to existing devices. In this paper, we present a van der Waals heterostructure photodetector based on Ta2NiSe5/WSe2, leveraging the inherent characteristics of heterostructures. Our results demonstrate that this detector exhibits excellent broad-spectrum detection ability from the visible to the infrared bands at room temperature, achieving an extremely high on/off ratio, without the need for an external bias voltage. Furthermore, compared to a pure material detector, it exhibits a fast response and low dark currents (~3.6 pA), with rise and fall times of 278 μs and 283 μs for the response rate, respectively. Our findings provide a promising method for wide-spectrum detection and enrich the diversity of room-temperature photoelectric detection.
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25

Zhang, Xiang Yu, Dongbo Wang, Zhi Zeng, Chenchen Zhao, Yaxin Liu, Bingke Zhang, Jingwen Pan, Donghao Liu, and Jinzhong Wang. "PVP-Assisted Hydrothermal Synthesis of Bi2O2Se Nanosheets for Self-Powered Photodetector." Journal of Solar Energy Research Updates 9 (February 28, 2022): 1–8. http://dx.doi.org/10.31875/2410-2199.2022.09.01.

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Abstract: Bi2O2Se nanosheets were successfully synthesized via a facile one-step PVP-assisted hydrothermal process for the first time. Corresponding characterizations, such as XRD, XPS, SEM and TEM, were carried out to investigate the formation of the products on the amount of PVP in the reaction system. Results revealed that the single-crystalline Bi2O2Se nanosheets with small mean lateral size of 176.3 nm were obtained when the amount of PVP is 0.75 g. Single-crystalline Bi2O2Se nanosheets self-powered photodetector exhibited excellent photodetection performance, superior to that of self-powered photodetectors based on the products synthesized without PVP and other nanomaterials. Under the illumination of 365 nm ultraviolet light, the rise time, responsivity and detectivity could approach up to 9 ms, 14.24 mA/W and 3.16×108 Jones, respectively. Bi2O2Se devices have high photoresponse even in the visible and near infrared bands due to its suitable band gap. The present work provides a novel preparation route of Bi2O2Se via hydrothermal method and PVP assisted synthesis of Bi2O2Se nanosheets is reported for the first time. Bi2O2Se nanosheets self-powered photodetector exhibited excellent photodetection performance and points out a direction for the evolution of self-powered photodetectors in the in the future.
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26

Chitara, Basant, Tej B. Limbu, Jason D. Orlando, Yongan Tang, and Fei Yan. "Ultrathin Bi2O2S nanosheet near-infrared photodetectors." Nanoscale 12, no. 30 (2020): 16285–91. http://dx.doi.org/10.1039/d0nr02991b.

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Анотація:
Solution-processed Bi2O2S nanosheets demonstrate high-efficiency NIR photodetection with a responsivity of 4 A/W, an external quantum efficiency of 630%, and a normalized photocurrent-to-dark-current ratio of 1.3 × 1010 per watt.
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27

Vella, Jarrett H., Lifeng Huang, Naresh Eedugurala, Kevin S. Mayer, Tse Nga Ng, and Jason D. Azoulay. "Broadband infrared photodetection using a narrow bandgap conjugated polymer." Science Advances 7, no. 24 (June 2021): eabg2418. http://dx.doi.org/10.1126/sciadv.abg2418.

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Анотація:
Photodetection spanning the short-, mid-, and long-wave infrared (SWIR-LWIR) underpins modern science and technology. Devices using state-of-the-art narrow bandgap semiconductors require complex manufacturing, high costs, and cooling requirements that remain prohibitive for many applications. We report high-performance infrared photodetection from a donor-acceptor conjugated polymer with broadband SWIR-LWIR operation. Electronic correlations within the π-conjugated backbone promote a high-spin ground state, narrow bandgap, long-wavelength absorption, and intrinsic electrical conductivity. These previously unobserved attributes enabled the fabrication of a thin-film photoconductive detector from solution, which demonstrates specific detectivities greater than 2.10 × 109 Jones. These room temperature detectivities closely approach those of cooled epitaxial devices. This work provides a fundamentally new platform for broadly applicable, low-cost, ambient temperature infrared optoelectronics.
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28

Zhang, Xinlei, Yuanfang Yu, Yueying Cui, Fang Yang, Wenhui Wang, Lin Liu, Junpeng Lu, and Zhenhua Ni. "High-performance broadband WO3−x/Bi2O2Se photodetectors based on plasmon-induced hot-electron injection." Applied Physics Letters 121, no. 6 (August 8, 2022): 061103. http://dx.doi.org/10.1063/5.0106392.

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Анотація:
Two-dimensional (2D) Bi2O2Se has emerged as a promising candidate for broadband photodetection, owing to its superior carrier mobility, outstanding air-stability, and suitable bandgap. However, Bi2O2Se photodetectors suffer limited sensitivity at a near-infrared region due to the relatively weak light absorption at this band. Here, it is demonstrated that coupling with plasmonic nanostructures can effectively improve the performance of Bi2O2Se photodetectors at a broad spectral range of 532–1550 nm. By virtue of plasmon-induced hot-electron injection and the improved light absorption, the WO3 −x/Bi2O2Se hybrid photodetector exhibits a high responsivity of ∼1.7 × 106 A/W at 700 nm, and ∼48 A/W at a communication O-band of 1310 nm, which is nearly one order of magnitude higher than that of an intrinsic Bi2O2Se device. Moreover, profited by ultrafast hot electron transfer and the avoided defect trapping, the device maintains a high-speed photoresponse (rise time ∼326 ns, decay time ∼47 μs). Our results show that 2D materials coupled with plasmonic nanostructures is a promising architecture for developing state-of-the-art broadband photodetection.
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29

Dong, Chengyun, Xiang An, Zhicheng Wu, Zhiguo Zhu, Chao Xie, Jian-An Huang, and Linbao Luo. "Multilayered PdTe2/thin Si heterostructures as self-powered flexible photodetectors with heart rate monitoring ability." Journal of Semiconductors 44, no. 11 (November 1, 2023): 112001. http://dx.doi.org/10.1088/1674-4926/44/11/112001.

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Abstract Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices. Herein, we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe2 multilayer on a thin Si film. A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 105, a decent responsivity of ~343 mA/W, a respectable specific detectivity of ~2.56 × 1012 Jones, and a rapid response time of 4.5/379 μs, under 730 nm light irradiation. The detector also displays an outstanding long-term air stability and operational durability. In addition, thanks to the excellent flexibility, the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests. Furthermore, the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate, suggesting a possible application in the area of flexible and wearable health monitoring.
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30

Lu, Yueheng, Xiao Sun, Huabin Zhou, Haojie Lai, Ran Liu, Pengyi Liu, Yang Zhou, and Weiguang Xie. "A high-performance and broadband two-dimensional perovskite-based photodetector via van der Waals integration." Applied Physics Letters 121, no. 16 (October 17, 2022): 161104. http://dx.doi.org/10.1063/5.0116505.

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Van der Waals (vdW) integration of two-dimensional (2D) nanosheets provides the possibility to design optoelectronic devices with extended functionality in a controllable manner. Here, by leveraging the appropriate energy band alignment and the high-efficiency charge transfer at the junction, we construct the MoS2/graphene/2D-perovskite vdW heterostructure, which realizes the highly sensitive and broadband photodetection. Particularly, at the near-infrared (NIR) wavelength (λ = 1550 nm), the heterostructure photodetector shows a balanced trade-off between the high responsivity (>3000 A/W) and fast response time (<1 ms), outperforming the previously reported NIR photodetectors based on all-inorganic vdW heterostructures. Our work not only extends the response wavelength of the 2D hybrid perovskite-based photodetector to the NIR range, but also offers additional insight into optoelectronic devices via vdW integration engineering.
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31

Zhu, Xinfa, Weishuai Duan, Xiancheng Meng, Xiyu Jia, Yonghui Zhang, Pengyu Zhou, Mengjun Wang, Hongxing Zheng, and Chao Fan. "Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity." Journal of Semiconductors 45, no. 3 (March 1, 2024): 032703. http://dx.doi.org/10.1088/1674-4926/45/3/032703.

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Abstract The emergent two-dimensional (2D) material, tin diselenide (SnSe2), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe2-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures have been implemented through a polydimethylsiloxane (PDMS)−assisted transfer method. These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range. The photodetector based on the SnS/SnSe2 heterostructure exhibits a significant responsivity of 4.99 × 103 A∙W−1, normalized detectivity of 5.80 × 1012 cm∙Hz1/2∙W−1, and fast response time of 3.13 ms, respectively, owing to the built-in electric field. Meanwhile, the highest values of responsivity, normalized detectivity, and response time for the photodetector based on the SnSe/SnSe2 heterostructure are 5.91 × 103 A∙W−1, 7.03 × 1012 cm∙Hz1/2∙W−1, and 4.74 ms, respectively. And their photodetection performances transcend those of photodetectors based on individual SnSe2, SnS, SnSe, and other commonly used 2D materials. Our work has demonstrated an effective strategy to improve the performance of SnSe2-based photodetectors and paves the way for their future commercialization.
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32

Wang, Pengfei, Qianqian Hu, Bocheng Lv, Yu Liu, Jun Yin, and Jialin Sun. "Oxidized eutectic gallium–indium (EGaIn) nanoparticles for broadband light response in a graphene-based photodetector." Materials Advances 2, no. 13 (2021): 4414–22. http://dx.doi.org/10.1039/d1ma00318f.

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33

Jeong, Moon-Ki, Jinhyeon Kang, Dasom Park, Sanggyu Yim, and In Hwan Jung. "A conjugated polyelectrolyte interfacial modifier for high performance near-infrared quantum-dot photodetectors." Journal of Materials Chemistry C 8, no. 7 (2020): 2542–50. http://dx.doi.org/10.1039/c9tc05541j.

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34

Zhou, Guigang, Huancheng Zhao, Xiangyang Li, Zhenhua Sun, Honglei Wu, Ling Li, Hua An, Shuangchen Ruan, and Zhengchun Peng. "Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid." Nanomaterials 12, no. 3 (January 29, 2022): 475. http://dx.doi.org/10.3390/nano12030475.

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The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 105 A/W, 3.9 × 104 A/W, 8.6 × 102 A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~1012 Jones, ~1011 Jones, ~109 Jones, and ~108 Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.
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35

Ren, Aobo, Liming Yuan, Hao Xu, Jiang Wu, and Zhiming Wang. "Recent progress of III–V quantum dot infrared photodetectors on silicon." Journal of Materials Chemistry C 7, no. 46 (2019): 14441–53. http://dx.doi.org/10.1039/c9tc05738b.

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36

Si, Wei, Wenbin Zhou, Xiangze Liu, Ke Wang, Yiming Liao, Feng Yan, and Xiaoli Ji. "Recent Advances in Broadband Photodetectors from Infrared to Terahertz." Micromachines 15, no. 4 (March 22, 2024): 427. http://dx.doi.org/10.3390/mi15040427.

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The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.
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37

Pelella, Aniello, Alessandro Grillo, Enver Faella, Giuseppe Luongo, Mohammad Bagher Askari, and Antonio Di Bartolomeo. "Graphene–Silicon Device for Visible and Infrared Photodetection." ACS Applied Materials & Interfaces 13, no. 40 (September 28, 2021): 47895–903. http://dx.doi.org/10.1021/acsami.1c12050.

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38

Berger, V., E. Rosencher, N. Vodjdani, and E. Costard. "Quantum well infrared photodetection induced by interband pumping." Applied Physics Letters 62, no. 4 (January 25, 1993): 378–80. http://dx.doi.org/10.1063/1.108962.

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39

Liu, R., R. Lu, C. Roberts, S. Gong, J. W. Allen, M. S. Allen, B. R. Wenner, and D. Wasserman. "Multiplexed infrared photodetection using resonant radio-frequency circuits." Applied Physics Letters 108, no. 6 (February 8, 2016): 061101. http://dx.doi.org/10.1063/1.4941431.

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40

Yang, Y., H. C. Liu, M. R. Hao, and W. Z. Shen. "Investigation on the limit of weak infrared photodetection." Journal of Applied Physics 110, no. 7 (October 2011): 074501. http://dx.doi.org/10.1063/1.3642986.

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41

Penello, Germano M., Marcos H. Degani, Marcelo Z. Maialle, Rudy M. S. Kawabata, Daniel N. Micha, Mauricio P. Pires, and Patricia L. Souza. "Exploring Parity Anomaly for Dual Peak Infrared Photodetection." IEEE Journal of Quantum Electronics 52, no. 12 (December 2016): 1–6. http://dx.doi.org/10.1109/jqe.2016.2623271.

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42

Gandhi, Hemi H., David Pastor, Tuan T. Tran, Stefan Kalchmair, Lachlan A. Smillie, Jonathan P. Mailoa, Ruggero Milazzo, et al. "Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection." AIP Advances 10, no. 7 (July 1, 2020): 075028. http://dx.doi.org/10.1063/5.0008281.

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43

Lähnemann, Jonas, Akhil Ajay, Martien I. Den Hertog, and Eva Monroy. "Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires." Nano Letters 17, no. 11 (October 6, 2017): 6954–60. http://dx.doi.org/10.1021/acs.nanolett.7b03414.

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44

Presting, Hartmut. "Near and mid infrared silicon/germanium based photodetection." Thin Solid Films 321, no. 1-2 (May 1998): 186–95. http://dx.doi.org/10.1016/s0040-6090(98)00471-4.

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45

Chen, X. Z., D. H. Zhang, W. Liu, Y. Wang, J. H. Li, A. T. S. Wee, and A. Ramam. "InSbN based p-n junctions for infrared photodetection." Electronics Letters 46, no. 11 (2010): 787. http://dx.doi.org/10.1049/el.2010.0713.

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46

Boucaud, Philippe, and Sébastien Sauvage. "Infrared photodetection with semiconductor self-assembled quantum dots." Comptes Rendus Physique 4, no. 10 (December 2003): 1133–54. http://dx.doi.org/10.1016/j.crhy.2003.10.020.

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47

Zhuge, Fuwei, Zhi Zheng, Peng Luo, Liang Lv, Yu Huang, Huiqiao Li, and Tianyou Zhai. "Nanostructured Materials and Architectures for Advanced Infrared Photodetection." Advanced Materials Technologies 2, no. 8 (May 30, 2017): 1700005. http://dx.doi.org/10.1002/admt.201700005.

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48

Sa, Zixu, Fengjing Liu, Dong Liu, Mingxu Wang, Jie Zhang, Yanxue Yin, Zhiyong Pang, Xinming Zhuang, Peng Wang, and Zaixing Yang. "Ag-catalyzed GaSb nanowires for flexible near-infrared photodetectors." Journal of Semiconductors 43, no. 11 (November 1, 2022): 112302. http://dx.doi.org/10.1088/1674-4926/43/11/112302.

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Abstract High-quality narrow bandgap semiconductors nanowires (NWs) challenge the flexible near-infrared (NIR) photodetectors in next-generation imaging, data communication, environmental monitoring, and bioimaging applications. In this work, complementary metal oxide semiconductor-compatible metal of Ag is deposited on glass as the growth catalyst for the surfactant-assisted chemical vapor deposition of GaSb NWs. The uniform morphology, balance stoichiometry, high-quality crystallinity, and phase purity of as-prepared NWs are checked by scanning electron microscopy, energy dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, and X-ray diffraction. The electrical properties of as-prepared NWs are studied by constructing back-gated field-effect-transistors, displaying a high I on/I off ratio of 104 and high peak hole mobility of 400 cm2/(V·s). Benefiting from the excellent electrical and mechanical flexibility properties, the as-fabricated NW flexible NIR photodetector exhibits high sensitivity and excellent photoresponse, with responsivity as high as 618 A/W and detectivity as high as 6.7 × 1010 Jones. Furthermore, there is no obvious decline in NIR photodetection behavior, even after parallel and perpendicular folding with 1200 cycles.
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49

Yakimov, Andrew I., Victor V. Kirienko, Dmitrii E. Utkin, and Anatoly V. Dvurechenskii. "Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths." Nanomaterials 12, no. 17 (August 30, 2022): 2993. http://dx.doi.org/10.3390/nano12172993.

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Photodetection based on assemblies of quantum dots (QDs) is able to tie the advantages of both the conventional photodetector and unique electronic properties of zero-dimensional structures in an unprecedented way. However, the biggest drawback of QDs is the small absorbance of infrared radiation due to the low density of the states coupled to the dots. In this paper, we report on the Ge/Si QD pin photodiodes integrated with photon-trapping hole array structures of various thicknesses. The aim of this study was to search for the hole array thickness that provided the maximum optical response of the light-trapping Ge/Si QD detectors. With this purpose, the embedded hole arrays were etched to different depths ranging from 100 to 550 nm. By micropatterning Ge/Si QD photodiodes, we were able to redirect normal incident light laterally along the plane of the dots, therefore facilitating the optical conversion of the near-infrared photodetectors due to elongation of the effective absorption length. Compared with the conventional flat photodetector, the responsivity of all microstructured devices had a polarization-independent improvement in the 1.0–1.8-μm wavelength range. The maximum photocurrent enhancement factor (≈50× at 1.7 μm) was achieved when the thickness of the photon-trapping structure reached the depth of the buried QD layers.
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50

Zhao, Zhou, Zengxing Zhang, Junmin Jing, Rui Gao, Zhiwei Liao, Wenjun Zhang, Guohua Liu, Yonghua Wang, Kaiying Wang, and Chenyang Xue. "Black silicon for near-infrared and ultraviolet photodetection: A review." APL Materials 11, no. 2 (February 1, 2023): 021107. http://dx.doi.org/10.1063/5.0133770.

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As a typical representative of micro/nano-textured silicon, black silicon has excellent light absorption properties and is gradually surfacing as a substitute for standard silicon in photoelectric devices. Black silicon overcomes the limitations of traditional silicon-based devices, which are unable to achieve infrared light detection at wavelengths >1100 nm and have low quantum efficiency and sensitivity in ultraviolet light detection. In this article, the recent theoretical and experimental breakthroughs in near-infrared and ultraviolet detection using black silicon are summarized in detail. First, black silicon and the techniques for its fabrication are introduced. Then, the application of enhanced black silicon photodetectors within or above the bandgap limit and black silicon fabricated using different methods in infrared detection is discussed. In principle, infrared detection using black silicon is achieved by jointly utilizing element doping, localized surface plasmon resonance effect, and heterojunction formation. In addition, the application of black silicon in ultraviolet detection is also introduced. Ultraviolet detection is realized by an induced junction and the self-built electric field between black silicon and aluminum oxide. Finally, the increasingly growing potential of black silicon in near-infrared and ultraviolet detection applications, such as infrared night vision imaging, signal detection, ultraviolet light intensity monitoring, and national defense early warning, is further discussed.
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