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Статті в журналах з теми "Infrared Photodetection"
Guo, Xiaofei, Liwen Zhang, Jun Chen, Xiaohong Zheng, and Lei Zhang. "Gate tunable self-powered few-layer black phosphorus broadband photodetector." Physical Chemistry Chemical Physics 23, no. 1 (2021): 399–404. http://dx.doi.org/10.1039/d0cp05292b.
Повний текст джерелаLin, Zhitao, Wenbiao Zhu, Yonghong Zeng, Yiqing Shu, Haiguo Hu, Weicheng Chen, and Jianqing Li. "Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure." Nanomaterials 12, no. 15 (August 3, 2022): 2664. http://dx.doi.org/10.3390/nano12152664.
Повний текст джерелаWen, Zheng, Guanlin Ke, Fangzhou Yi, and Zhenhua Sun. "The Surface ligands of PbSe Colloidal Quantum Dots Towards the High-Performing Infrared Photodetection." Journal of Physics: Conference Series 2524, no. 1 (June 1, 2023): 012010. http://dx.doi.org/10.1088/1742-6596/2524/1/012010.
Повний текст джерелаLu, Qin, Li Yu, Yan Liu, Jincheng Zhang, Genquan Han, and Yue Hao. "Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions." Materials 12, no. 16 (August 9, 2019): 2532. http://dx.doi.org/10.3390/ma12162532.
Повний текст джерелаTong, Jinchao, Fei Suo, Junhuizhi Ma, Landobasa Y. M. Tobing, Li Qian, and Dao Hua Zhang. "Surface plasmon enhanced infrared photodetection." Opto-Electronic Advances 2, no. 1 (2019): 18002601–10. http://dx.doi.org/10.29026/oea.2019.180026.
Повний текст джерелаFernandes, F. M., E. C. F. da Silva, and A. A. Quivy. "Mid-infrared photodetection in an AlGaAs/GaAs quantum-well infrared photodetector using photoinduced noise." Journal of Applied Physics 118, no. 20 (November 28, 2015): 204507. http://dx.doi.org/10.1063/1.4936307.
Повний текст джерелаYang, Changming, Shiyu Qin, Yan Zuo, Yang Shi, Tong Bie, Ming Shao, and Yu Yu. "Waveguide Schottky photodetector with tunable barrier based on Ti3C2T x /p-Si van der Waals heterojunction." Nanophotonics 10, no. 16 (October 18, 2021): 4133–39. http://dx.doi.org/10.1515/nanoph-2021-0415.
Повний текст джерелаTang, Qianying, Fang Zhong, Qing Li, Jialu Weng, Junzhe Li, Hangyu Lu, Haitao Wu, et al. "Infrared Photodetection from 2D/3D van der Waals Heterostructures." Nanomaterials 13, no. 7 (March 24, 2023): 1169. http://dx.doi.org/10.3390/nano13071169.
Повний текст джерелаMasoudian Saadabad, Reza, Christian Pauly, Norbert Herschbach, Dragomir N. Neshev, Haroldo T. Hattori, and Andrey E. Miroshnichenko. "Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks." Nanomaterials 11, no. 2 (February 8, 2021): 428. http://dx.doi.org/10.3390/nano11020428.
Повний текст джерелаLi, Xinxin, Zhen Deng, Ziguang Ma, Yang Jiang, Chunhua Du, Haiqiang Jia, Wenxin Wang, and Hong Chen. "Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure." Sensors 22, no. 12 (June 16, 2022): 4536. http://dx.doi.org/10.3390/s22124536.
Повний текст джерелаДисертації з теми "Infrared Photodetection"
Fowler, Clayton M. "Application of Metamaterials to RF Energy Harvesting and Infrared Photodetection." Scholar Commons, 2017. http://scholarcommons.usf.edu/etd/7024.
Повний текст джерелаOsedach, Timothy. "Colloidal Quantum Dots and J-Aggregating Cyanine Dyes for Infrared Photodetection." Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10088.
Повний текст джерелаEngineering and Applied Sciences
Alvarenga, Deborah Reis. "A study on the physical properties of quantum dot structures for infrared photodetection." Universidade Federal de Minas Gerais, 2011. http://hdl.handle.net/1843/JCBV-8PBLYM.
Повний текст джерелаEsta tese faz parte de uma proposta mais ampla cujo objetivo global e dominar a tecnologia de fotodetectores de radiacao infravermelha baseados em pontos quanticos semicondutores auto-organizados, os Quantum Dot Infrared Photodetectors (QDIPs), para a faixa de comprimento de onda de 2 a 20 Êm. A tese esta centrada no estudo das propriedades fisicas de pontos quanticos e de estruturas de QDIPs, em especial os mecanismos de transicao intrabanda e de extracao de carga envolvidos no processo de geracao da fotocorrente. Foram estudadas estruturas inovadoras e originais baseadas em pontos quanticos auto organizados de InAs crescidos sobre substratos de InP. Para obter os principais resultados apresentados nesta tese foram feitas medidas de fotocorrente em funcao da temperatura e tensao externa aplicada, utilizando um espectrometro de transformada de Fourier. As tecnicas experimentais de fotoluminescencia, microscopia de forca atomica, microscopia eletronica de transmissao e curvas de corrente versus voltagem tambem foram utilizadas para obter uma melhor compreensao dos mecanismos fisicos envolvidos. Para explicar os resultados e atribuir cada pico de fotocorrente a uma transicao especifica utilizamos um modelo teorico tridimensional. Os resultados que se destacam e sao apresentados nessa tese sao: i. O efeito Auger intrabanda e apontado como um possivel processo importante para gerar a corrente nos QDIPs. Medidas de fotocorrente intrabanda e de absorcao, juntamente com um calculo teorico tridimensional, mostram que a transicao responsavel por gerar a fotocorrente medida em uma estrutura QDIP especifica estudada ocorre entre estados ligados do ponto quantico onde o estado final da transicao esta 200 meV abaixo do continuo. O espalhamento Auger e proposto como o mecanismo responsavel pela extracao de carga do ponto quantico, e portanto pela fotocorrente gerada, nesses dispositivos. Resultados de fotoluminescencia e fotocorrente interbanda fornecem apoio adicional para esta conclusao. ii. Diferentes estruturas nas vizinhancas do ponto quantico influenciam no sentido da corrente, pois os mecanismos de extracao dos eletrons dependem da estrutura como um todo. Os dispositivos aqui estudados apresentam fotocorrente com sentido positivo e negativo para a mesma tensao externa aplicada. Este duplo comportamento e atribuido a assimetria presente nessas estruturas, capaz de favorecer a extracao de eletrons em um dos dois sentidos possiveis para a corrente. Esse processo foi observado apenas para pequenos valores de tensao externa aplicada. Para valores altos de tensao, os eletrons se propagam no mesmo sentido do campo eletrico aplicado, assim como esperado. iii. Apresentamos um QDIP altamente seletivo com resposta espectral em torno de 12 Êm. A estrutura estudada e composta por pocos de InGaAs e pontos quanticos de InAs. A transicao responsavel pela fotocorrente observada ocorre entre estados ligados do ponto quantico, seguida por um mecanismo de extracao de carga onde o acoplamento do estado final da transicao com o poco de potencial vizinho ao ponto quantico tem um papel fundamental.
Martinez, Bertille. "Étude des propriétés optoélectroniques de nanocristaux colloïdaux à faible bande interdite : application à la détection infrarouge." Electronic Thesis or Diss., Sorbonne université, 2019. http://www.theses.fr/2019SORUS254.
Повний текст джерелаColloidal semiconductor nanocrystals are nanomaterials synthesized in solution. Below a certain size, these nanocrystals acquire quantum confinement properties: their optoelectronic properties depend on the nanoparticle size. In the visible range, colloidal nanocrystals are quite mature. The next objective in this field is to get infrared colloidal nanocrystals. Mercury selenide (HgSe) and mercury telluride (HgTe) are potential candidates. The goal of this PhD work is to strengthen our knowledge on optical, optoelectronic and transport properties of these nanocrystals, in order to design an infrared detector.To do so, we studied the electronic structure of HgSe and HgTe for different sizes and surface chemistries. We can then determine the energies of the electronic levels and the Fermi energy, quantify doping level … We show that the nanocrystal size has an influence on doping level, which gets more and more n-type as the nanocrystal size gets larger. We even observe a semiconductor-metal transition in HgSe nanocrystals as the size is increased. The doping control with surface chemistry is then investigated. By using dipolar effects or oxidizing ligands, we show a doping control over several orders of magnitude. Thanks to these studies, we are able to propose a HgTe based device for detection at 2.5 µm, which structure allows to convert effectively the absorbed photons into an electrical current and to get a high signal over noise ratio. We get a photoresponse of 20 mA/W and a detectivity of 3 × 10 9 Jones
Yeo, Hwee Tiong. "High responsivity tunable step quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FYeo.pdf.
Повний текст джерелаLantz, Kevin R. "Two color photodetector using an asymmetric quantum well structure." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FLantz.pdf.
Повний текст джерелаKonukbay, Atakan. "Design of a voltage tunable broadband quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FKonukbay.pdf.
Повний текст джерелаJiang, Lin. "Investigation of a novel multicolor quantum well infrared photodetector and advanced quantum dot infrared photodetectors." [Gainesville, Fla.] : University of Florida, 2003. http://purl.fcla.edu/fcla/etd/UFE0001249.
Повний текст джерелаHanson, Nathan A. "Characterization and analysis of a multicolor quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2006. http://library.nps.navy.mil/uhtbin/hyperion/06Jun%5FHanson.pdf.
Повний текст джерелаThesis Advisor(s): Gamani Karunasiri, James H. Luscombe. "June 2006." Includes bibliographical references (p. 49-50). Also available in print.
Alves, Fabio Durante Pereira. "Design and analysis of a multicolor quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2005. http://library.nps.navy.mil/uhtbin/hyperion/05Sep%5FAlves.pdf.
Повний текст джерелаThesis Advisor(s): Gamani Karunasiri, John Powers, Sherif Michael. Includes bibliographical references (p. 93-97). Also available online.
Книги з теми "Infrared Photodetection"
Shi, Wei. Quantum well structures for infrared photodetection. Hauppauge, N.Y: Nova Science Publishers, 2009.
Знайти повний текст джерелаShi, Wei. Quantum well structures for infrared photodetection. Hauppauge, N.Y: Nova Science Publishers, 2009.
Знайти повний текст джерелаD, Gunapala Sarath, and United States. National Aeronautics and Space Administration., eds. 9-microns cutoff 256 x 256 GaAs/Al(x)Ga₁-x as quantum, well infrared photodetector hand-held camera. [Washington, DC: National Aeronautics and Space Administration, 1997.
Знайти повний текст джерелаD, Gunapala Sarath, and United States. National Aeronautics and Space Administration., eds. 9-microns cutoff 256 x 256 GaAs/Al(x)Ga₁-x as quantum, well infrared photodetector hand-held camera. [Washington, DC: National Aeronautics and Space Administration, 1997.
Знайти повний текст джерелаD, Gunapala S., and United States. National Aeronautics and Space Administration., eds. 9-microns cutoff 256 x 256 GaAs/Al(x)Ga₁-x as quantum, well infrared photodetector hand-held camera. [Washington, DC: National Aeronautics and Space Administration, 1997.
Знайти повний текст джерелаD, Gunapala S., and United States. National Aeronautics and Space Administration., eds. 9-microns cutoff 256 x 256 GaAs/Al(x)Ga₁-x as quantum, well infrared photodetector hand-held camera. [Washington, DC: National Aeronautics and Space Administration, 1997.
Знайти повний текст джерелаD, Gunapala S., and United States. National Aeronautics and Space Administration., eds. 15-[micro]m 128 x 128 GaAs/Al[subscript x]Ga[subscripts 1-x]As quantum well infrared photodetector focal plane array camera. [Washington, DC: National Aeronautics and Space Administration, 1997.
Знайти повний текст джерелаD, Gunapala S., and United States. National Aeronautics and Space Administration., eds. 15-[micro]m 128 x 128 GaAs/Al[subscript x]Ga[subscripts 1-x]As quantum well infrared photodetector focal plane array camera. [Washington, DC: National Aeronautics and Space Administration, 1997.
Знайти повний текст джерелаD, Gunapala Sarath, and United States. National Aeronautics and Space Administration., eds. 15-[micro]m 128 x 128 GaAs/Al[subscript x]Ga[subscripts 1-x]As quantum well infrared photodetector focal plane array camera. [Washington, DC: National Aeronautics and Space Administration, 1997.
Знайти повний текст джерелаD, Gunapala Sarath, and United States. National Aeronautics and Space Administration., eds. 15-[micro]m 128 x 128 GaAs/Al[subscript x]Ga[subscripts 1-x]As quantum well infrared photodetector focal plane array camera. [Washington, DC: National Aeronautics and Space Administration, 1997.
Знайти повний текст джерелаЧастини книг з теми "Infrared Photodetection"
Guo, Junxiong, Lin Lin, Jianbo Chen, Shangdong Li, and Yuhao He. "Graphene Plasmonic Mid-Infrared Photodetector." In Plasmonics-Based Optical Sensors and Detectors, 473–94. New York: Jenny Stanford Publishing, 2023. http://dx.doi.org/10.1201/9781003438304-17.
Повний текст джерелаBillaha, Md Aref, Sourav Rakshit, Bhaskar Roy, Bikas Mondal, Santosh Kumar Choudhary, and Kumari Arti Yadav. "CdS/ZnSe-Based Multicolor Quantum Well Infrared Photodetector for Infrared Application." In Advances in Computer, Communication and Control, 501–7. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-3122-0_50.
Повний текст джерелаPereira, Pedro, Lesslie Guerra, G. M. Penello, M. P. Pires, L. D. Pinto, R. Jakomin, R. T. Mourão, M. H. Degani, M. Z. Maialle, and P. L. Souza. "Quantum Well Infrared Photodetector for the SWIR Range." In Smart Innovation, Systems and Technologies, 363–70. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-9155-2_29.
Повний текст джерелаDas, Utpal. "Mid-Infrared InAs/GaSb Type-II Superlattice Photodetector Arrays." In Selected Topics in Photonics, 31–40. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-5010-7_4.
Повний текст джерелаSingh, Anand, Sumit Jain, Anil Kumar, and Vanita R. Agarwal. "InGaAs Based Short-Wave Infrared p-i-n Photodetector." In Springer Proceedings in Physics, 1083–87. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_166.
Повний текст джерелаVoitsekhovskii, A. V., S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn, S. A. Dvoretsky, N. N. Mikhailov, G. Y. Sidorov, and M. V. Yakushev. "II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays." In Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors, 135–54. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-20510-1_6.
Повний текст джерелаLiu, H. C., Jianmeng Li, Z. R. Wasilewski, M. Buchanan, P. H. Wilson, M. Lamm, and J. G. Simmons. "A three-color voltage tunable quantum well intersubband photodetector for long wavelength infrared." In Quantum Well Intersubband Transition Physics and Devices, 123–33. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_10.
Повний текст джерелаMukherjee, Swarnadip, and Bhaskaran Muralidharan. "Type-II Superlattice Infrared Photodetector (T2SL IRPD) Miniband Modeling: An Atomistic NEGF Study." In Springer Proceedings in Physics, 1039–45. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_159.
Повний текст джерелаSa’ar, A., C. Mermelstein, H. Schneider, C. Schoenbein, and M. Walther. "Electric Field Distribution and Low Power Nonlinear Photo-Response of Quantum Well Infrared Photodetectros." In Intersubband Transitions in Quantum Wells: Physics and Devices, 60–67. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5759-3_9.
Повний текст джерелаGunapala, S. D., S. V. Bandara, J. K. Liu, W. Hong, M. Sundaram, P. D. Maker, R. E. Müller, C. A. Shott, and R. Carralejo. "9 Micron Cutoff 640 x 486 GaAs/AlxGa1-xAs Quantum Well Infrared Photodetector Snap-Shot Camera." In Intersubband Transitions in Quantum Wells: Physics and Devices, 193–98. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5759-3_29.
Повний текст джерелаТези доповідей конференцій з теми "Infrared Photodetection"
Yang, Ji, Ziyang He, Zhaorong Shi, Yun Tan, Xinzheng Lan, and Haisheng Song. "Infrared photodetection based on monodisperse mercury telluride colloidal quantum dots." In Infrared Devices and Infrared Technology, edited by HaiMei Gong and Jin Lu. SPIE, 2023. http://dx.doi.org/10.1117/12.2651855.
Повний текст джерелаMylnikov, Dmitry, Elena Titova, Vladimir Kaydashev, Maxim Moskotin, Vsevolod Belosevich, and Dmitry Svintsov. "Fast mid-infrared photodetection using graphene." In PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019). AIP Publishing, 2021. http://dx.doi.org/10.1063/5.0054957.
Повний текст джерелаGiunto, Andrea, Nicolas Humblot, Luc Burnier, Anna Krammer, Andreas Schuler, and Anna Fontcuberta i Morral. "Co-Sputtered Monocrystalline GeSn for Infrared Photodetection." In 2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM). IEEE, 2020. http://dx.doi.org/10.1109/sum48678.2020.9161032.
Повний текст джерелаSTIFF-ROBERTS, ADRIENNE D. "HYBRID NANOMATERIALS FOR MULTI-SPECTRAL INFRARED PHOTODETECTION." In Proceedings of the 2006 Lester Eastman Conference. WORLD SCIENTIFIC, 2007. http://dx.doi.org/10.1142/9789812770332_0025.
Повний текст джерелаAzoulay, Jason D. "Infrared photodetection using narrow bandgap conjugated polymers." In Organic Photonic Materials and Devices XXVI, edited by Ileana Rau, Okihiro Sugihara, and William M. Shensky. SPIE, 2024. http://dx.doi.org/10.1117/12.3000525.
Повний текст джерелаChen, X. Z., Y. J. Jin, and D. H. Zhang. "Dilute antimonide nitride for long wavelength infrared photodetection." In 7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES: (LDSD 2011). AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4878302.
Повний текст джерелаShao, Wen, Xiaoping Xie, Yunqiang Zheng, Wei Wang, Tiantian Li, Feifan Wang, Yong Wang, Stephanie Law та Tingyi Gu. "Near-infrared Photodetection in Graphene/β-In2Se3 Heterostructure". У Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/acpc.2020.m4a.24.
Повний текст джерелаBhat, Ravi D. R., Nicolae C. Panoiu, Richard M. Osgood, and Steven R. J. Brueck. "Enhancing Infrared Photodetection with a Circular Metal Grating." In CLEO '07. 2007 Conference on Lasers and Electro-Optics. IEEE, 2007. http://dx.doi.org/10.1109/cleo.2007.4452668.
Повний текст джерелаGarcía de Arquer, F. Pelayo. "III-V Semiconductor Quantum Dots for Infrared Photodetection." In nanoGe Fall Meeting 2021. València: Fundació Scito, 2021. http://dx.doi.org/10.29363/nanoge.nfm.2021.094.
Повний текст джерелаLukman, Steven, Lu Ding, Lei Xu, Ye Tao, Gang Zhang, Qingyang Steve Wu, Ming Yang, et al. "Mid-IR photodetection by interlayer exciton in 2D heterostructure." In Infrared Sensors, Devices, and Applications X, edited by Ashok K. Sood, Priyalal Wijewarnasuriya, and Arvind I. D'Souza. SPIE, 2020. http://dx.doi.org/10.1117/12.2570736.
Повний текст джерелаЗвіти організацій з теми "Infrared Photodetection"
Tidrow, Meimei Z., Xudong Jiang, Jung-Hee Lee, Sheng S. Li, and Junhee Moon. Very-Long-Wavelength Quantum Well Infrared Photodetector. Fort Belvoir, VA: Defense Technical Information Center, January 1999. http://dx.doi.org/10.21236/ada370626.
Повний текст джерелаChou, Stephen, and Daniel Tsui. Voltage Tunable Two-Color Quantum Well Infrared Photodetector. Fort Belvoir, VA: Defense Technical Information Center, June 2003. http://dx.doi.org/10.21236/ada429217.
Повний текст джерелаLeonard, Francois Leonard. Dynamically and continuously tunable infrared photodetector using carbon nanotubes. Office of Scientific and Technical Information (OSTI), September 2012. http://dx.doi.org/10.2172/1055591.
Повний текст джерелаGoldberg, A., K. K. Choi, N. C. Das, A. La, and M. Jhabvala. Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results. Fort Belvoir, VA: Defense Technical Information Center, August 1999. http://dx.doi.org/10.21236/ada393889.
Повний текст джерелаLittle, J. W., S. W. Kennedy, R. P. Leavitt, M. L. Lucas, and K. A. Olver. A New Two-Color Infrared Photodetector Design Using INGAAS/INALAS Coupled Quantum Wells. Fort Belvoir, VA: Defense Technical Information Center, August 1999. http://dx.doi.org/10.21236/ada393876.
Повний текст джерела