Готові списки джерел за темами / Infrared Photodetection

Добірка наукової літератури з теми "Infrared Photodetection"

Автор: Grafiati
Опубліковано: 6 вересня 2023
Оновлено: 25 травня 2024

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Статті в журналах з теми "Infrared Photodetection"

1

Guo, Xiaofei, Liwen Zhang, Jun Chen, Xiaohong Zheng, and Lei Zhang. "Gate tunable self-powered few-layer black phosphorus broadband photodetector." Physical Chemistry Chemical Physics 23, no. 1 (2021): 399–404. http://dx.doi.org/10.1039/d0cp05292b.

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Анотація:
Due to the giant Stark effect in few-layer black phosphorus (BP), a self-powered and gate-controlled pure few-layer BP based photodetector device is proposed, which can cover the photodetection range from mid-infrared range (MIR) to far-infrared range (FIR).
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Lin, Zhitao, Wenbiao Zhu, Yonghong Zeng, Yiqing Shu, Haiguo Hu, Weicheng Chen, and Jianqing Li. "Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure." Nanomaterials 12, no. 15 (August 3, 2022): 2664. http://dx.doi.org/10.3390/nano12152664.

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Анотація:
Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe2/p-MoTe2) photodetector for high-performance photodetection in the broadband spectral range of 405–2000 nm. Due to the low Schottky barrier contact of the ReSe2/MoTe2 heterojunction, the rectification ratio (RR) of ~102 at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 1011 Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550–2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection.
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3

Wen, Zheng, Guanlin Ke, Fangzhou Yi, and Zhenhua Sun. "The Surface ligands of PbSe Colloidal Quantum Dots Towards the High-Performing Infrared Photodetection." Journal of Physics: Conference Series 2524, no. 1 (June 1, 2023): 012010. http://dx.doi.org/10.1088/1742-6596/2524/1/012010.

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Анотація:
Abstract Lead selenide colloidal quantum dots (PbSe CQDs) have the characteristics of an adjustable band gap, low cost, and easy processing. It is one of the ideal materials for developing infrared photodetectors and has broad application prospects in optical fiber communication, biomedical imaging, national defense, and other fields. Indium gallium zinc oxide (IGZO) is an n-type semiconductor material with high mobility. In this paper, an infrared photodetector with IGZO-PbSe CQDs heterojunction is fabricated, with the PbSe CQDs capped by MPA, TBAI, or EDT. The photodetection performance of these photodetectors is studied and compared, to reveal the best choice of the surface ligand of the PbSe CQDs for the photodetection. This work provides useful and solid knowledge that shall enlighten the optoelectronic application of PbSe CQDs.
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4

Lu, Qin, Li Yu, Yan Liu, Jincheng Zhang, Genquan Han, and Yue Hao. "Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions." Materials 12, no. 16 (August 9, 2019): 2532. http://dx.doi.org/10.3390/ma12162532.

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Анотація:
We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodetection performance at mid-infrared (mid-IR) wavelengths. While it was found that the photoresponsivity is similar to that in a BP photo-transistor, the noise equivalent power and thus the specific detectivity are nearly two orders of magnitude better. These exemplify an attractive platform for practical applications of long wavelength photodetection, as well as provide a new strategy for controlling flicker noise.
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5

Tong, Jinchao, Fei Suo, Junhuizhi Ma, Landobasa Y. M. Tobing, Li Qian, and Dao Hua Zhang. "Surface plasmon enhanced infrared photodetection." Opto-Electronic Advances 2, no. 1 (2019): 18002601–10. http://dx.doi.org/10.29026/oea.2019.180026.

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Fernandes, F. M., E. C. F. da Silva, and A. A. Quivy. "Mid-infrared photodetection in an AlGaAs/GaAs quantum-well infrared photodetector using photoinduced noise." Journal of Applied Physics 118, no. 20 (November 28, 2015): 204507. http://dx.doi.org/10.1063/1.4936307.

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Yang, Changming, Shiyu Qin, Yan Zuo, Yang Shi, Tong Bie, Ming Shao, and Yu Yu. "Waveguide Schottky photodetector with tunable barrier based on Ti3C2T x /p-Si van der Waals heterojunction." Nanophotonics 10, no. 16 (October 18, 2021): 4133–39. http://dx.doi.org/10.1515/nanoph-2021-0415.

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Анотація:
Abstract MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface. Given the solution-processability and tunable work function, MXene also holds great potential for wide-range photodetection and integrated optics. Here, we demonstrate a waveguide integrated Schottky photodetector based on Ti3C2T x /Si van der Waals heterojunction. Specifically, the barrier of the Schottky photodetector can be adjusted by using simple surface treatment. The work function of the Ti3C2T x is reduced from 4.66 to 4.43 eV after vacuum annealing, and the barrier height of Ti3C2T x /p-Si Schottky junction is correspondingly increased from 0.64 to 0.72 eV, leading to 215 nm working wavelength blue-shift. The photodetector exhibits working wavelength tunability in short-wavelength infrared regions due to the engineered Schottky barrier. To our best knowledge, this is the first demonstration of utilizing MXene in waveguide-integrated photodetection, showing the potential applications for various scenarios thanks to the flexible working wavelength range induced by the tunable barrier.
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Tang, Qianying, Fang Zhong, Qing Li, Jialu Weng, Junzhe Li, Hangyu Lu, Haitao Wu, et al. "Infrared Photodetection from 2D/3D van der Waals Heterostructures." Nanomaterials 13, no. 7 (March 24, 2023): 1169. http://dx.doi.org/10.3390/nano13071169.

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Анотація:
An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.
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Masoudian Saadabad, Reza, Christian Pauly, Norbert Herschbach, Dragomir N. Neshev, Haroldo T. Hattori, and Andrey E. Miroshnichenko. "Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks." Nanomaterials 11, no. 2 (February 8, 2021): 428. http://dx.doi.org/10.3390/nano11020428.

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Анотація:
Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.
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Li, Xinxin, Zhen Deng, Ziguang Ma, Yang Jiang, Chunhua Du, Haiqiang Jia, Wenxin Wang, and Hong Chen. "Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure." Sensors 22, no. 12 (June 16, 2022): 4536. http://dx.doi.org/10.3390/s22124536.

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Анотація:
Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion efficiencies; however, it is plagued with the high dark current. In this paper, we have demonstrated the plasmonic photodetection with dark current suppression to create a Si-based broadband photodetector with enhanced performance in the short-wavelength infrared (SWIR) region. By hybridizing a 3 nm Au layer with the spherical Au nanoparticles (NPs) formed by rapid thermal annealing (RTA) on Si substrate, a well-behaved ITO/Au/Au NPs/n-Si Schottky photodetector with suppressed dark current and enhanced absorption in the SWIR region is obtained. This optimized detector shows a broad detection beyond 1200 nm and a high responsivity of 22.82 mA/W at 1310 nm at −1 V, as well as a low dark current density on the order of 10−5 A/cm2. Such a Si-based plasmon-enhanced detector with desirable performance in dark current will be a promising strategy for realization of the high SNR detector while keeping fabrication costs low.
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Дисертації з теми "Infrared Photodetection"

1

Fowler, Clayton M. "Application of Metamaterials to RF Energy Harvesting and Infrared Photodetection." Scholar Commons, 2017. http://scholarcommons.usf.edu/etd/7024.

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Techniques for adapting metamaterials for the improvement of RF energy harvesting and infrared photodetection are demonstrated using experimental and computer simulation methods. Two methods for RF energy harvesting are experimentally demonstrated and supported by computer simulation. In the first method, a metamaterial perfect absorber (MPA) is made into a rectenna capable of harvesting RF energy and delivering power to a load by soldering Schottky diodes onto connected split ring resonator (SRR) structures composing the planar metasurface of the perfect absorber. The metamaterial rectenna is accompanied by a ground plane placed parallel to it, which forms a Fabry-Perot cavity between the metasurface and the ground plane. The Fabry-Perot cavity stores energy in the form of standing waves which is transferred to the SRR structures of the metasurface as AC currents that are rectified by the diodes to create DC power. This type of design enables highly efficient energy harvesting for low input power, creates a large antenna capture area, and uses elements with small electrical size, such that 100 uW of power (enough to operate simple devices) can be captured at ambient intensities ~ 1 - 2 uW/cm2. Two designs using this method are presented, one that operates for linear polarizations at 0.9 GHz and a smaller polarization-independent design that operates around 1.5 GHz. In the second method, the energy stored in the standing waves of an MPA Fabry-Perot cavity is instead harvested by placing a separate energy harvesting antenna within the cavity. The cavity shapes and enhances the incident electric field, and then the separate energy harvesting antenna is designed to be inserted into the cavity so that its shape and/or radiation pattern matches the electric field lines within the cavity and maximally extracts the stored energy. This method allows for great customization of antenna design parameters, such as operating frequency, polarization dependence, and directionality, by swapping out different metasurface and antenna designs. Using this method, the amount of power harvested by a simple dipole rectenna placed within a cavity is improved by a factor of 18 as compared to what it would harvest by itself at an ambient intensity of 35 nW/cm2. Lastly, the addition of plasmonic structures to DWELL (quantum dot-in-a-well) infrared photodetectors is investigated by computer simulation. DWELL photodetectors have the potential to one day replace standard mercury cadmium telluride detectors by being cheaper alternatives with a higher operating temperature. The inclusion of gold plasmonic structure arrays into DWELL detectors enables excitation of surface plasmon polariton modes that increase the responsivity of the detector to incident infrared radiation. The peak responsivity of a DWELL detector is demonstrated to improve by a factor of 8 for a 1 um thick layer of plasmonic structures and by a factor of 15 for a 2 um thick layer. These works are steps forward in making RF energy harvesting practically useful and for improving infrared photodetector performance.
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2

Osedach, Timothy. "Colloidal Quantum Dots and J-Aggregating Cyanine Dyes for Infrared Photodetection." Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10088.

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Анотація:
The emergence of nanostructured semiconducting materials enables new approaches toward the realization of photodetectors that operate in the technologically important near- and short-wave infrared (NIR and SWIR) spectral ranges. In particular, organic semiconductors and colloidal quantum dots (QDs) possess numerous advantages over conventional crystalline semiconductors including highly tunable optical and electronic characteristics, the prospect for low-temperature processing, and compatibility with inexpensive and exible substrates. Photodetectors based on such materials may lead to low-cost IR focal plane arrays for night-vision imaging as well as a multitude of novel applications in biological and chemical sensing. This thesis describes the development and detailed characterization of several photodetectors that incorporate colloidal QD and organic semiconductor thin films as active layers. The electronic properties of PbS QDs are thoroughly investigated in a field effect transistor (FET) geometry and several QD-based photoconductive structures exhibiting SWIR photosensitivity are demonstrated. We describe a novel QD-sensitized lateral heterojunction photoconductor in which the functions of optical absorption and charge transport are dissociated into different physical layers that can be independently optimized. This structure is advantageous because it obviates the need for aggressive chemical treatments to the QD film that may compromise the quality of QD surface passivation. Photovoltaic device architectures are addressed, noting their advantages of being operable without an external applied bias and at fast response speeds. We present detailed experimental and theoretical characterization of a photovoltaic structure that is sensitized at NIR wavelengths by a J-aggregating cyanine dye. The high absorption coefficient of the J-aggregate film, combined with the use of a reflective anode and optical spacer layer, enables an external quantum efficiency (EQE) of \(16.1\pm0.1\%(\lambda = 756 nm)\) to be achieved at zero-bias in a device that incorporates an \(8.1\pm0.3 nm\)-thick dye film. The merits and drawbacks of the various device architectures and nanostructured material systems are discussed and the outlook for nanostructured photodetectors that exhibit infrared sensitivity is presented.
Engineering and Applied Sciences
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3

Alvarenga, Deborah Reis. "A study on the physical properties of quantum dot structures for infrared photodetection." Universidade Federal de Minas Gerais, 2011. http://hdl.handle.net/1843/JCBV-8PBLYM.

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Анотація:
This thesis is part of a project where the overall goal is to master the technology of infrared photodetectors based on self-organized semiconductor quantum dots, the Quantum Dot Infrared Photodetectors (QDIPs) for the wavelength range from 2 to 20 ìm. The thesis focuses on the physical properties of quantum dots and QDIPs structures, especially on the intraband transitions and extraction mechanisms involved in the photocurrent generation. We studied original and innovative structures based on self-organized InAs quantum dots grown on InP substrates. The main results presented in this thesis are based on photocurrent measurements as a function of temperature and external applied bias voltages, using a Fourier Transform Infrared spectrometer. The experimental techniques of photoluminescence, atomic force microscopy, transmission electron microscopy and current-voltage curves were also performed to achieve a better understanding of the physical mechanisms involved. To explain the results and assign each photocurrent peak to a particular transition, fully three dimensional theoretical calculations were done. The main results presented in this thesis are: i- It is shown that the intraband Auger effect can be an important process for the photocurrent generation in QDIPs. Intraband photocurrent and absorption measurements, together with a full three-dimensional theoretical modeling revealed that a bound-to-bound optical transition, where the final state is about 200 meV deep below the conduction band continuum, is responsible for the photogenerated current in the particular QDIP structure investigated. Photoluminescence and interband photocurrent spectra further support this conclusion. ii- We studied the influence of different structures in the neighborhood of the quantum dot on the photocurrent response of quantum dot infrared photodetectors. We measured a photocurrent with positive and a negative sign for the same external electric field in some QDIP structures. The dual sign photocurrent signal is attributed to asymmetries on the structures which can privilege the extraction of the carriers from the dots for one of the two possible senses of the current. This process is seen for small external applied bias voltages or when no bias is applied. For high external fields the photoexcited electrons go in the same sense of the applied field, as expected. iii- We present a very highly selective QDIP, which combines InAs quantum dots and InGaAs wells, operating at 12 ìm. The transition responsible for the exceptionally narrow photocurrent is attributed to photon absorption between quantum dot bound states, followed by a carrier extraction mechanism where the coupling of the final state of the transition to the adjacent quantum well is highlighted
Esta tese faz parte de uma proposta mais ampla cujo objetivo global e dominar a tecnologia de fotodetectores de radiacao infravermelha baseados em pontos quanticos semicondutores auto-organizados, os Quantum Dot Infrared Photodetectors (QDIPs), para a faixa de comprimento de onda de 2 a 20 Êm. A tese esta centrada no estudo das propriedades fisicas de pontos quanticos e de estruturas de QDIPs, em especial os mecanismos de transicao intrabanda e de extracao de carga envolvidos no processo de geracao da fotocorrente. Foram estudadas estruturas inovadoras e originais baseadas em pontos quanticos auto organizados de InAs crescidos sobre substratos de InP. Para obter os principais resultados apresentados nesta tese foram feitas medidas de fotocorrente em funcao da temperatura e tensao externa aplicada, utilizando um espectrometro de transformada de Fourier. As tecnicas experimentais de fotoluminescencia, microscopia de forca atomica, microscopia eletronica de transmissao e curvas de corrente versus voltagem tambem foram utilizadas para obter uma melhor compreensao dos mecanismos fisicos envolvidos. Para explicar os resultados e atribuir cada pico de fotocorrente a uma transicao especifica utilizamos um modelo teorico tridimensional. Os resultados que se destacam e sao apresentados nessa tese sao: i. O efeito Auger intrabanda e apontado como um possivel processo importante para gerar a corrente nos QDIPs. Medidas de fotocorrente intrabanda e de absorcao, juntamente com um calculo teorico tridimensional, mostram que a transicao responsavel por gerar a fotocorrente medida em uma estrutura QDIP especifica estudada ocorre entre estados ligados do ponto quantico onde o estado final da transicao esta 200 meV abaixo do continuo. O espalhamento Auger e proposto como o mecanismo responsavel pela extracao de carga do ponto quantico, e portanto pela fotocorrente gerada, nesses dispositivos. Resultados de fotoluminescencia e fotocorrente interbanda fornecem apoio adicional para esta conclusao. ii. Diferentes estruturas nas vizinhancas do ponto quantico influenciam no sentido da corrente, pois os mecanismos de extracao dos eletrons dependem da estrutura como um todo. Os dispositivos aqui estudados apresentam fotocorrente com sentido positivo e negativo para a mesma tensao externa aplicada. Este duplo comportamento e atribuido a assimetria presente nessas estruturas, capaz de favorecer a extracao de eletrons em um dos dois sentidos possiveis para a corrente. Esse processo foi observado apenas para pequenos valores de tensao externa aplicada. Para valores altos de tensao, os eletrons se propagam no mesmo sentido do campo eletrico aplicado, assim como esperado. iii. Apresentamos um QDIP altamente seletivo com resposta espectral em torno de 12 Êm. A estrutura estudada e composta por pocos de InGaAs e pontos quanticos de InAs. A transicao responsavel pela fotocorrente observada ocorre entre estados ligados do ponto quantico, seguida por um mecanismo de extracao de carga onde o acoplamento do estado final da transicao com o poco de potencial vizinho ao ponto quantico tem um papel fundamental.
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4

Martinez, Bertille. "Étude des propriétés optoélectroniques de nanocristaux colloïdaux à faible bande interdite : application à la détection infrarouge." Electronic Thesis or Diss., Sorbonne université, 2019. http://www.theses.fr/2019SORUS254.

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Анотація:
Les nanocristaux colloïdaux de semiconducteurs sont des nanomatériaux synthétisés en solution. En deçà d’une certaine taille, ils deviennent confinés : leurs propriétés optiques et électroniques sont alors dépendantes de leur taille. Le développement de ces nanocristaux a atteint une grande maturité dans le visible. L’enjeu est maintenant d’étendre la gamme accessible et d’obtenir des nanocristaux ayant des propriétés dans l’infrarouge. Parmi les candidats, on trouve les nanocristaux de tellure de mercure, HgTe, et de séléniure de mercure, HgSe. L’objectif de ce doctorat est d’approfondir la connaissance des propriétés optoélectroniques et de transport de ces matériaux afin de concevoir un système de détection infrarouge. Pour y parvenir, la structure électronique de ces matériaux est mesurée pour différentes tailles et différents ligands. Nous pouvons alors déterminer les énergies des niveaux électroniques et quantifier le niveau de dopage. Nous montrons que ce dopage dépend de la taille des cristaux, qu’il devient de plus en plus n quand la taille du cristal augmente. Dans le cas de HgSe, cette évolution du dopage avec la taille se traduit par une transition semiconducteur-métal. Le contrôle du dopage est ensuite étudié en fonction de la chimie de surface. En utilisant des effets dipolaires ou des transferts d’électrons via des ligands oxydants, nous montrons une modulation du dopage sur plusieurs ordres de grandeur. Ces études nous permettent de proposer un détecteur infrarouge à base de HgTe, fonctionnant à 2.5 µm, dont la structure permet de convertir les photons absorbés en courant. Nous obtenons une réponse de 20 mA/W et une détectivité de 3 × 10 9 Jones
Colloidal semiconductor nanocrystals are nanomaterials synthesized in solution. Below a certain size, these nanocrystals acquire quantum confinement properties: their optoelectronic properties depend on the nanoparticle size. In the visible range, colloidal nanocrystals are quite mature. The next objective in this field is to get infrared colloidal nanocrystals. Mercury selenide (HgSe) and mercury telluride (HgTe) are potential candidates. The goal of this PhD work is to strengthen our knowledge on optical, optoelectronic and transport properties of these nanocrystals, in order to design an infrared detector.To do so, we studied the electronic structure of HgSe and HgTe for different sizes and surface chemistries. We can then determine the energies of the electronic levels and the Fermi energy, quantify doping level … We show that the nanocrystal size has an influence on doping level, which gets more and more n-type as the nanocrystal size gets larger. We even observe a semiconductor-metal transition in HgSe nanocrystals as the size is increased. The doping control with surface chemistry is then investigated. By using dipolar effects or oxidizing ligands, we show a doping control over several orders of magnitude. Thanks to these studies, we are able to propose a HgTe based device for detection at 2.5 µm, which structure allows to convert effectively the absorbed photons into an electrical current and to get a high signal over noise ratio. We get a photoresponse of 20 mA/W and a detectivity of 3 × 10 9 Jones
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5

Yeo, Hwee Tiong. "High responsivity tunable step quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FYeo.pdf.

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6

Lantz, Kevin R. "Two color photodetector using an asymmetric quantum well structure." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FLantz.pdf.

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7

Konukbay, Atakan. "Design of a voltage tunable broadband quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FKonukbay.pdf.

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8

Jiang, Lin. "Investigation of a novel multicolor quantum well infrared photodetector and advanced quantum dot infrared photodetectors." [Gainesville, Fla.] : University of Florida, 2003. http://purl.fcla.edu/fcla/etd/UFE0001249.

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Hanson, Nathan A. "Characterization and analysis of a multicolor quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2006. http://library.nps.navy.mil/uhtbin/hyperion/06Jun%5FHanson.pdf.

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Анотація:
Thesis (M.S. in Applied Physics)--Naval Postgraduate School, June 2006.
Thesis Advisor(s): Gamani Karunasiri, James H. Luscombe. "June 2006." Includes bibliographical references (p. 49-50). Also available in print.
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Alves, Fabio Durante Pereira. "Design and analysis of a multicolor quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2005. http://library.nps.navy.mil/uhtbin/hyperion/05Sep%5FAlves.pdf.

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Анотація:
Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, September 2005.
Thesis Advisor(s): Gamani Karunasiri, John Powers, Sherif Michael. Includes bibliographical references (p. 93-97). Also available online.
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Книги з теми "Infrared Photodetection"

1

Shi, Wei. Quantum well structures for infrared photodetection. Hauppauge, N.Y: Nova Science Publishers, 2009.

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Shi, Wei. Quantum well structures for infrared photodetection. Hauppauge, N.Y: Nova Science Publishers, 2009.

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3

D, Gunapala Sarath, and United States. National Aeronautics and Space Administration., eds. 9-microns cutoff 256 x 256 GaAs/Al(x)Ga₁-x as quantum, well infrared photodetector hand-held camera. [Washington, DC: National Aeronautics and Space Administration, 1997.

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D, Gunapala Sarath, and United States. National Aeronautics and Space Administration., eds. 9-microns cutoff 256 x 256 GaAs/Al(x)Ga₁-x as quantum, well infrared photodetector hand-held camera. [Washington, DC: National Aeronautics and Space Administration, 1997.

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D, Gunapala S., and United States. National Aeronautics and Space Administration., eds. 9-microns cutoff 256 x 256 GaAs/Al(x)Ga₁-x as quantum, well infrared photodetector hand-held camera. [Washington, DC: National Aeronautics and Space Administration, 1997.

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6

D, Gunapala S., and United States. National Aeronautics and Space Administration., eds. 9-microns cutoff 256 x 256 GaAs/Al(x)Ga₁-x as quantum, well infrared photodetector hand-held camera. [Washington, DC: National Aeronautics and Space Administration, 1997.

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7

D, Gunapala S., and United States. National Aeronautics and Space Administration., eds. 15-[micro]m 128 x 128 GaAs/Al[subscript x]Ga[subscripts 1-x]As quantum well infrared photodetector focal plane array camera. [Washington, DC: National Aeronautics and Space Administration, 1997.

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8

D, Gunapala S., and United States. National Aeronautics and Space Administration., eds. 15-[micro]m 128 x 128 GaAs/Al[subscript x]Ga[subscripts 1-x]As quantum well infrared photodetector focal plane array camera. [Washington, DC: National Aeronautics and Space Administration, 1997.

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9

D, Gunapala Sarath, and United States. National Aeronautics and Space Administration., eds. 15-[micro]m 128 x 128 GaAs/Al[subscript x]Ga[subscripts 1-x]As quantum well infrared photodetector focal plane array camera. [Washington, DC: National Aeronautics and Space Administration, 1997.

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10

D, Gunapala Sarath, and United States. National Aeronautics and Space Administration., eds. 15-[micro]m 128 x 128 GaAs/Al[subscript x]Ga[subscripts 1-x]As quantum well infrared photodetector focal plane array camera. [Washington, DC: National Aeronautics and Space Administration, 1997.

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Частини книг з теми "Infrared Photodetection"

1

Guo, Junxiong, Lin Lin, Jianbo Chen, Shangdong Li, and Yuhao He. "Graphene Plasmonic Mid-Infrared Photodetector." In Plasmonics-Based Optical Sensors and Detectors, 473–94. New York: Jenny Stanford Publishing, 2023. http://dx.doi.org/10.1201/9781003438304-17.

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2

Billaha, Md Aref, Sourav Rakshit, Bhaskar Roy, Bikas Mondal, Santosh Kumar Choudhary, and Kumari Arti Yadav. "CdS/ZnSe-Based Multicolor Quantum Well Infrared Photodetector for Infrared Application." In Advances in Computer, Communication and Control, 501–7. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-3122-0_50.

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3

Pereira, Pedro, Lesslie Guerra, G. M. Penello, M. P. Pires, L. D. Pinto, R. Jakomin, R. T. Mourão, M. H. Degani, M. Z. Maialle, and P. L. Souza. "Quantum Well Infrared Photodetector for the SWIR Range." In Smart Innovation, Systems and Technologies, 363–70. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-9155-2_29.

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4

Das, Utpal. "Mid-Infrared InAs/GaSb Type-II Superlattice Photodetector Arrays." In Selected Topics in Photonics, 31–40. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-5010-7_4.

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5

Singh, Anand, Sumit Jain, Anil Kumar, and Vanita R. Agarwal. "InGaAs Based Short-Wave Infrared p-i-n Photodetector." In Springer Proceedings in Physics, 1083–87. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_166.

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6

Voitsekhovskii, A. V., S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn, S. A. Dvoretsky, N. N. Mikhailov, G. Y. Sidorov, and M. V. Yakushev. "II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays." In Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors, 135–54. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-20510-1_6.

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7

Liu, H. C., Jianmeng Li, Z. R. Wasilewski, M. Buchanan, P. H. Wilson, M. Lamm, and J. G. Simmons. "A three-color voltage tunable quantum well intersubband photodetector for long wavelength infrared." In Quantum Well Intersubband Transition Physics and Devices, 123–33. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_10.

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8

Mukherjee, Swarnadip, and Bhaskaran Muralidharan. "Type-II Superlattice Infrared Photodetector (T2SL IRPD) Miniband Modeling: An Atomistic NEGF Study." In Springer Proceedings in Physics, 1039–45. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_159.

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9

Sa’ar, A., C. Mermelstein, H. Schneider, C. Schoenbein, and M. Walther. "Electric Field Distribution and Low Power Nonlinear Photo-Response of Quantum Well Infrared Photodetectros." In Intersubband Transitions in Quantum Wells: Physics and Devices, 60–67. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5759-3_9.

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Gunapala, S. D., S. V. Bandara, J. K. Liu, W. Hong, M. Sundaram, P. D. Maker, R. E. Müller, C. A. Shott, and R. Carralejo. "9 Micron Cutoff 640 x 486 GaAs/AlxGa1-xAs Quantum Well Infrared Photodetector Snap-Shot Camera." In Intersubband Transitions in Quantum Wells: Physics and Devices, 193–98. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5759-3_29.

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Тези доповідей конференцій з теми "Infrared Photodetection"

1

Yang, Ji, Ziyang He, Zhaorong Shi, Yun Tan, Xinzheng Lan, and Haisheng Song. "Infrared photodetection based on monodisperse mercury telluride colloidal quantum dots." In Infrared Devices and Infrared Technology, edited by HaiMei Gong and Jin Lu. SPIE, 2023. http://dx.doi.org/10.1117/12.2651855.

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2

Mylnikov, Dmitry, Elena Titova, Vladimir Kaydashev, Maxim Moskotin, Vsevolod Belosevich, and Dmitry Svintsov. "Fast mid-infrared photodetection using graphene." In PROCEEDINGS OF INTERNATIONAL CONGRESS ON GRAPHENE, 2D MATERIALS AND APPLICATIONS (2D MATERIALS 2019). AIP Publishing, 2021. http://dx.doi.org/10.1063/5.0054957.

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Giunto, Andrea, Nicolas Humblot, Luc Burnier, Anna Krammer, Andreas Schuler, and Anna Fontcuberta i Morral. "Co-Sputtered Monocrystalline GeSn for Infrared Photodetection." In 2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM). IEEE, 2020. http://dx.doi.org/10.1109/sum48678.2020.9161032.

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STIFF-ROBERTS, ADRIENNE D. "HYBRID NANOMATERIALS FOR MULTI-SPECTRAL INFRARED PHOTODETECTION." In Proceedings of the 2006 Lester Eastman Conference. WORLD SCIENTIFIC, 2007. http://dx.doi.org/10.1142/9789812770332_0025.

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Azoulay, Jason D. "Infrared photodetection using narrow bandgap conjugated polymers." In Organic Photonic Materials and Devices XXVI, edited by Ileana Rau, Okihiro Sugihara, and William M. Shensky. SPIE, 2024. http://dx.doi.org/10.1117/12.3000525.

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Chen, X. Z., Y. J. Jin, and D. H. Zhang. "Dilute antimonide nitride for long wavelength infrared photodetection." In 7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES: (LDSD 2011). AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4878302.

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Shao, Wen, Xiaoping Xie, Yunqiang Zheng, Wei Wang, Tiantian Li, Feifan Wang, Yong Wang, Stephanie Law та Tingyi Gu. "Near-infrared Photodetection in Graphene/β-In2Se3 Heterostructure". У Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/acpc.2020.m4a.24.

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8

Bhat, Ravi D. R., Nicolae C. Panoiu, Richard M. Osgood, and Steven R. J. Brueck. "Enhancing Infrared Photodetection with a Circular Metal Grating." In CLEO '07. 2007 Conference on Lasers and Electro-Optics. IEEE, 2007. http://dx.doi.org/10.1109/cleo.2007.4452668.

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García de Arquer, F. Pelayo. "III-V Semiconductor Quantum Dots for Infrared Photodetection." In nanoGe Fall Meeting 2021. València: Fundació Scito, 2021. http://dx.doi.org/10.29363/nanoge.nfm.2021.094.

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Lukman, Steven, Lu Ding, Lei Xu, Ye Tao, Gang Zhang, Qingyang Steve Wu, Ming Yang, et al. "Mid-IR photodetection by interlayer exciton in 2D heterostructure." In Infrared Sensors, Devices, and Applications X, edited by Ashok K. Sood, Priyalal Wijewarnasuriya, and Arvind I. D'Souza. SPIE, 2020. http://dx.doi.org/10.1117/12.2570736.

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Звіти організацій з теми "Infrared Photodetection"

1

Tidrow, Meimei Z., Xudong Jiang, Jung-Hee Lee, Sheng S. Li, and Junhee Moon. Very-Long-Wavelength Quantum Well Infrared Photodetector. Fort Belvoir, VA: Defense Technical Information Center, January 1999. http://dx.doi.org/10.21236/ada370626.

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2

Chou, Stephen, and Daniel Tsui. Voltage Tunable Two-Color Quantum Well Infrared Photodetector. Fort Belvoir, VA: Defense Technical Information Center, June 2003. http://dx.doi.org/10.21236/ada429217.

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3

Leonard, Francois Leonard. Dynamically and continuously tunable infrared photodetector using carbon nanotubes. Office of Scientific and Technical Information (OSTI), September 2012. http://dx.doi.org/10.2172/1055591.

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4

Goldberg, A., K. K. Choi, N. C. Das, A. La, and M. Jhabvala. Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results. Fort Belvoir, VA: Defense Technical Information Center, August 1999. http://dx.doi.org/10.21236/ada393889.

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Little, J. W., S. W. Kennedy, R. P. Leavitt, M. L. Lucas, and K. A. Olver. A New Two-Color Infrared Photodetector Design Using INGAAS/INALAS Coupled Quantum Wells. Fort Belvoir, VA: Defense Technical Information Center, August 1999. http://dx.doi.org/10.21236/ada393876.

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