Статті в журналах з теми "Infrared optoelectronics"
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Zhuravlyova, L. M., M. R. Ivashevsky, and I. F. Muzafarov. "NEW MATERIALS IN OPTOELECTRONICS." World of Transport and Transportation 16, no. 2 (April 28, 2018): 74–83. http://dx.doi.org/10.30932/1992-3252-2018-16-2-7.
Повний текст джерелаJOHNSTONE, DANIEL K. "THERMAL MANAGEMENT IN OPTOELECTRONICS." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 501–10. http://dx.doi.org/10.1142/s0129156402001411.
Повний текст джерелаGubbin, Christopher R., Simone De Liberato, and Thomas G. Folland. "Surface phonon polaritons for infrared optoelectronics." Journal of Applied Physics 131, no. 3 (January 21, 2022): 030901. http://dx.doi.org/10.1063/5.0064234.
Повний текст джерелаMonroy, E., F. Guillot, S. Leconte, E. Bellet-Amalric, L. Nevou, L. Doyennette, M. Tchernycheva, et al. "III-Nitride Nanostructures for Infrared Optoelectronics." Acta Physica Polonica A 110, no. 3 (September 2006): 295–301. http://dx.doi.org/10.12693/aphyspola.110.295.
Повний текст джерелаKrier, A. "Mid-infrared optoelectronics materials and devices." III-Vs Review 9, no. 2 (April 1996): 77. http://dx.doi.org/10.1016/s0961-1290(96)80025-1.
Повний текст джерелаJoullié, A. "Editorial: Mid-infrared optoelectronics: materials and devices." IEE Proceedings - Optoelectronics 149, no. 1 (February 1, 2002): 21. http://dx.doi.org/10.1049/ip-opt:20020166.
Повний текст джерелаHaywood, S. "Editorial: Mid-infrared optoelectronics materials and devices." IEE Proceedings - Optoelectronics 150, no. 4 (2003): 281. http://dx.doi.org/10.1049/ip-opt:20030871.
Повний текст джерелаLhuillier, Emmanuel, and Philippe Guyot-Sionnest. "Recent Progresses in Mid Infrared Nanocrystal Optoelectronics." IEEE Journal of Selected Topics in Quantum Electronics 23, no. 5 (September 2017): 1–8. http://dx.doi.org/10.1109/jstqe.2017.2690838.
Повний текст джерелаSchöler, Michael, Maximilian W. Lederer, and Peter J. Wellmann. "Deep Electronic Levels in n-Type and p-Type 3C-SiC." Materials Science Forum 963 (July 2019): 297–300. http://dx.doi.org/10.4028/www.scientific.net/msf.963.297.
Повний текст джерелаAssali, S., A. Attiaoui, S. Koelling, M. R. M. Atalla, A. Kumar, J. Nicolas, F. A. Chowdhury, C. Lemieux-Leduc, and O. Moutanabbir. "Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics." Journal of Applied Physics 132, no. 19 (November 21, 2022): 195305. http://dx.doi.org/10.1063/5.0120505.
Повний текст джерелаLiang, Guozhen, Xuechao Yu, Xiaonan Hu, Bo Qiang, Chongwu Wang, and Qi Jie Wang. "Mid-infrared photonics and optoelectronics in 2D materials." Materials Today 51 (December 2021): 294–316. http://dx.doi.org/10.1016/j.mattod.2021.09.021.
Повний текст джерелаSargent, E. H. "Solution-Processed Infrared Optoelectronics: Photovoltaics, Sensors, and Sources." IEEE Journal of Selected Topics in Quantum Electronics 14, no. 4 (July 2008): 1223–29. http://dx.doi.org/10.1109/jstqe.2008.925766.
Повний текст джерелаBauer, M. R., C. S. Cook, P. Aella, J. Tolle, J. Kouvetakis, P. A. Crozier, A. V. G. Chizmeshya, David J. Smith, and S. Zollner. "SnGe superstructure materials for Si-based infrared optoelectronics." Applied Physics Letters 83, no. 17 (October 27, 2003): 3489–91. http://dx.doi.org/10.1063/1.1622435.
Повний текст джерелаSizov, F. F., and A. Rogalski. "Semiconductor superlattices and quantum wells for infrared optoelectronics." Progress in Quantum Electronics 17, no. 2 (January 1993): 93–164. http://dx.doi.org/10.1016/0079-6727(93)90005-t.
Повний текст джерелаGámez-Valenzuela, Sergio, David Neusser, Carlos Benitez-Martin, Francisco Najera, Juan A. Guadix, Carlos Moreno-Yruela, Belén Villacampa, et al. "V-shaped pyranylidene/triphenylamine-based chromophores with enhanced photophysical, electrochemical and nonlinear optical properties." Materials Advances 2, no. 13 (2021): 4255–63. http://dx.doi.org/10.1039/d1ma00415h.
Повний текст джерелаLhuillier, Emmanuel. "Narrow band gap nanocrystals for infrared cost-effective optoelectronics." Photoniques, no. 116 (2022): 54–57. http://dx.doi.org/10.1051/photon/202211654.
Повний текст джерелаSolov’ev, V. A., A. A. Toropov, B. Ya Meltser, Ya A. Terent’ev, R. N. Kyutt, A. A. Sitnikova, A. N. Semenov, et al. "GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics." Semiconductors 36, no. 7 (July 2002): 816–20. http://dx.doi.org/10.1134/1.1493755.
Повний текст джерелаClark, Samuel M., and Sang Eon Han. "Two-dimensional metamaterial transparent metal electrodes for infrared optoelectronics." Optics Letters 39, no. 12 (June 13, 2014): 3666. http://dx.doi.org/10.1364/ol.39.003666.
Повний текст джерелаGuillot, F., E. Monroy, B. Gayral, E. Bellet-Amalric, D. Jalabert, J. M. Gérard, Le Si Dang, et al. "GaN/AlGaN superlattices for optoelectronics in the mid-infrared." physica status solidi (b) 243, no. 7 (June 2006): 1669–73. http://dx.doi.org/10.1002/pssb.200565328.
Повний текст джерелаChoi, Jongmin, Jea Woong Jo, F. Pelayo García de Arquer, Yong-Biao Zhao, Bin Sun, Junghwan Kim, Min-Jae Choi, et al. "Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics." Advanced Materials 30, no. 29 (May 28, 2018): 1801720. http://dx.doi.org/10.1002/adma.201801720.
Повний текст джерелаJia, Jinmei, Huan Liu, Jijie Zhao, Yuxuan Du, and Shuai Wen. "Si:HgTe Colloidal Quantum Dots Heterojunction-Based Infrared Photodiode." Journal of Nanomaterials 2023 (February 9, 2023): 1–9. http://dx.doi.org/10.1155/2023/4595819.
Повний текст джерелаWang, Lin, Li Huang, Wee Chong Tan, Xuewei Feng, Li Chen, and Kah-Wee Ang. "Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics." Nanoscale 10, no. 29 (2018): 14359–67. http://dx.doi.org/10.1039/c8nr03207f.
Повний текст джерелаKim, Suk Hyun, Kyeong Ho Park, Young Gie Lee, Seong Jun Kang, Yongsup Park, and Young Duck Kim. "Color Centers in Hexagonal Boron Nitride." Nanomaterials 13, no. 16 (August 15, 2023): 2344. http://dx.doi.org/10.3390/nano13162344.
Повний текст джерелаLi, Yuyu, Khwanchai Tantiwanichapan, Anna K. Swan, and Roberto Paiella. "Graphene plasmonic devices for terahertz optoelectronics." Nanophotonics 9, no. 7 (May 14, 2020): 1901–20. http://dx.doi.org/10.1515/nanoph-2020-0211.
Повний текст джерелаLuo, Lu, Simone Assali, Mahmoud Atalla, Sebastian Koelling, and Oussama Moutanabbir. "Tunable Shortwave Infrared and Midwave Infrared Optoelectronics in Germanium/Germanium Tin Core/Shell Nanowires." ECS Meeting Abstracts MA2020-01, no. 22 (May 1, 2020): 1321. http://dx.doi.org/10.1149/ma2020-01221321mtgabs.
Повний текст джерелаDong, Zhengang, Jiaying Shen, Fan Zhang, Yaping Qi, Yang Zhang, Gongxun Bai, Zhenping Wu, and Danfeng Li. "Tunable-wavelength photoluminescence of a flexible transition metal doped oxide phosphor thin film." Applied Physics Letters 122, no. 13 (March 27, 2023): 132908. http://dx.doi.org/10.1063/5.0147266.
Повний текст джерелаSturm, James C. "Advanced Column-IV Epitaxial Materials for Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 60–64. http://dx.doi.org/10.1557/s0883769400030281.
Повний текст джерелаYang, Li-Ming, Guo-Yong Fang, Jing Ma, Raghani Pushpa, and Eric Ganz. "Halogenated MOF-5 variants show new configuration, tunable band gaps and enhanced optical response in the visible and near infrared." Physical Chemistry Chemical Physics 18, no. 47 (2016): 32319–30. http://dx.doi.org/10.1039/c6cp06981a.
Повний текст джерелаFang, Cizhe, Yan Liu, Qingfang Zhang, Genquan Han, Xi Gao, Yao Shao, Jincheng Zhang, and Yue Hao. "Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra." Opto-Electronic Advances 1, no. 3 (2018): 18000401–10. http://dx.doi.org/10.29026/oea.2018.180004.
Повний текст джерелаBaek, Se-Woong. "(Invited) Building Colloidal Quantum Dot Solids for Efficient Infrared Optoelectronics." ECS Meeting Abstracts MA2021-01, no. 23 (May 30, 2021): 900. http://dx.doi.org/10.1149/ma2021-0123900mtgabs.
Повний текст джерелаAidaraliev, M., N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, and E. A. Kognovitskaya. "Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics." Semiconductors 36, no. 8 (August 2002): 944–49. http://dx.doi.org/10.1134/1.1500478.
Повний текст джерелаMonroy, Eva, Fabien Guillot, Sylvain Leconte, Laurent Nevou, Laetitia Doyennette, Maria Tchernycheva, Francois H. Julien, Esther Baumann, Fabrizio R. Giorgetta, and Daniel Hofstetter. "Latest developments in GaN-based quantum devices for infrared optoelectronics." Journal of Materials Science: Materials in Electronics 19, no. 8-9 (December 5, 2007): 821–27. http://dx.doi.org/10.1007/s10854-007-9482-3.
Повний текст джерелаBaek, Se‐Woong, Pau Molet, Min‐Jae Choi, Margherita Biondi, Olivier Ouellette, James Fan, Sjoerd Hoogland, F. Pelayo García de Arquer, Agustín Mihi, and Edward H. Sargent. "Nanostructured Back Reflectors for Efficient Colloidal Quantum‐Dot Infrared Optoelectronics." Advanced Materials 31, no. 33 (June 21, 2019): 1901745. http://dx.doi.org/10.1002/adma.201901745.
Повний текст джерелаPham, Phuong V., The-Hung Mai, Huy-Binh Do, Vinoth Kumar Ponnusamy, and Feng-Chuan Chuang. "Integrated Graphene Heterostructures in Optical Sensing." Micromachines 14, no. 5 (May 17, 2023): 1060. http://dx.doi.org/10.3390/mi14051060.
Повний текст джерелаCao, Fei, Xiaobao Xu, Dejian Yu, and Haibo Zeng. "Lead-free halide perovskite photodetectors spanning from near-infrared to X-ray range: a review." Nanophotonics 10, no. 8 (June 1, 2020): 2221–47. http://dx.doi.org/10.1515/nanoph-2020-0632.
Повний текст джерелаAhamed, M. Irshad, and K. Sathish Kumar. "Modelling of electronic and optical properties of Cu2SnS3 quantum dots for optoelectronics applications." Materials Science-Poland 37, no. 1 (March 1, 2019): 108–15. http://dx.doi.org/10.2478/msp-2018-0103.
Повний текст джерелаJawad, M., S. Selvaraju, M. U. Javed, F. Ali, Q. Rafiq, I. Ur Rahman, B. Masood, M. B. Hussain, S. Azam, and H. Elhosiny Ali. "Effect of Ce and Sm doping on optoelectronic and thermoelectric properties of Bi2Te3 alloy." Chalcogenide Letters 19, no. 12 (December 21, 2022): 871–83. http://dx.doi.org/10.15251/cl.2022.1912.871.
Повний текст джерелаPontillas, Shienna Marie, Florentino C. Sumera, and Rigoberto C. Advincula. "Reversible Addition-Fragmentation Chain Transfer (RAFT) Polymerization of Poly(ethylmethacrylate) with Pendant Carbazole Groups." KIMIKA 29, no. 1 (August 7, 2018): 41–50. http://dx.doi.org/10.26534/kimika.v29i1.41-50.
Повний текст джерелаAlam, Injamul, Kadambinee Sa, Sonali Das, BVRS Subramanyam, Manoranjan Mandal, Subhasri Subudhi, Santosini Patra, and Pitamber Mahanandia. "Study of electrical properties of a few layers of graphene sheets under Ultraviolet and Visible light irradation." International Journal of Innovative Research in Physics 2, no. 4 (July 5, 2021): 8–14. http://dx.doi.org/10.15864/ijiip.2402.
Повний текст джерелаHafiz, Shihab Bin, Michael R. Scimeca, Ayaskanta Sahu, and Dong-Kyun Ko. "(Invited) Mid-Infrared Colloidal Quantum Dot Based Nanoelectronics and Nano-Optoelectronics." ECS Transactions 92, no. 1 (July 3, 2019): 11–16. http://dx.doi.org/10.1149/09201.0011ecst.
Повний текст джерелаWassweiler, Ella, and Fatima Toor. "Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices." AIP Advances 6, no. 6 (June 2016): 065018. http://dx.doi.org/10.1063/1.4954766.
Повний текст джерелаZhuang, Q. D., H. Alradhi, Z. M. Jin, X. R. Chen, J. Shao, X. Chen, Ana M. Sanchez, et al. "Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics." Nanotechnology 28, no. 10 (February 8, 2017): 105710. http://dx.doi.org/10.1088/1361-6528/aa59c5.
Повний текст джерелаLei, Yong, Xiaozhan Yang, and Wenlin Feng. "Synthesis of vertically-aligned large-area MoS2 nanofilm and its application in MoS2/Si heterostructure photodetector." Nanotechnology 33, no. 10 (December 17, 2021): 105709. http://dx.doi.org/10.1088/1361-6528/ac3c7e.
Повний текст джерелаSotor, Jarosław, Krzysztof Abramski, Arkadiusz Antończak, Grzegorz Sobon, Paweł Kaczmarek, Adam Wąż, Grzegorz Dudzik, et al. "Laser and Fiber Electronics Group." Photonics Letters of Poland 11, no. 2 (July 1, 2019): 38. http://dx.doi.org/10.4302/plp.v11i2.901.
Повний текст джерелаDegiron, Aloyse. "Pushing the boundaries of nanocrystal optoelectronics with structured photonic environments." Photoniques, no. 119 (2023): 52–57. http://dx.doi.org/10.1051/photon/202311952.
Повний текст джерелаMusat, Viorica, Ana Filip, Nicolae Tigau, Rodica Dinica, Elena Herbei, Cosmin Romanitan, Iuliana Mihalache, and Munizer Purica. "1D Nanostructured ZnO Layers by Microwave - Assisted Hydrothermal Synthesis." Revista de Chimie 69, no. 10 (November 15, 2018): 2788–93. http://dx.doi.org/10.37358/rc.18.10.6625.
Повний текст джерелаKandaswamy, P. K., H. Machhadani, E. Bellet-Amalric, L. Nevou, M. Tchernycheva, L. Lahourcade, F. H. Julien, and E. Monroy. "Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics." Microelectronics Journal 40, no. 2 (February 2009): 336–38. http://dx.doi.org/10.1016/j.mejo.2008.07.058.
Повний текст джерелаGao, Rui, Hairui Liu, Jien Yang, Feng Yang, Tianxing Wang, Zhuxia Zhang, Xuguang Liu, Husheng Jia, Bingshe Xu, and Heng Ma. "2D anisotropic type-I SiS vdW heterostructures toward infrared polarized optoelectronics applications." Applied Surface Science 529 (November 2020): 147026. http://dx.doi.org/10.1016/j.apsusc.2020.147026.
Повний текст джерелаVella, Jarrett H., Lifeng Huang, Naresh Eedugurala, Kevin S. Mayer, Tse Nga Ng, and Jason D. Azoulay. "Broadband infrared photodetection using a narrow bandgap conjugated polymer." Science Advances 7, no. 24 (June 2021): eabg2418. http://dx.doi.org/10.1126/sciadv.abg2418.
Повний текст джерелаYang, Xianguang, and Baojun Li. "Monolayer MoS2 for nanoscale photonics." Nanophotonics 9, no. 7 (February 3, 2020): 1557–77. http://dx.doi.org/10.1515/nanoph-2019-0533.
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