Статті в журналах з теми "InAs QDs on silicon"
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Abouzaid, Oumaima, Hussein Mehdi, Mickael Martin, Jérémy Moeyaert, Bassem Salem, Sylvain David, Abdelkader Souifi, et al. "O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate." Nanomaterials 10, no. 12 (December 7, 2020): 2450. http://dx.doi.org/10.3390/nano10122450.
Повний текст джерелаLi, Yuan-He, Zhi-Yao Zhuo, Jian Wang, Jun-Hui Huang, Shu-Lun Li, Hai-Qiao Ni, Zhi-Chuan Niu, Xiu-Ming Dou, and Bao-Quan Sun. "Controlling exciton spontaneous emission of quantum dots by Au nanoparticles." Acta Physica Sinica 71, no. 6 (2022): 067804. http://dx.doi.org/10.7498/aps.71.20211863.
Повний текст джерелаYamamoto, N., K. Akahane, S. Gozu, and Noboru Ohtani. "Growth of InAs Quantum Dots on a Low Lattice-Mismatched AlGaSb Layer Prepared on GaAs (001) Substrates." Solid State Phenomena 99-100 (July 2004): 49–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.49.
Повний текст джерелаSaravanan, S. "Stacking of InAs QDs with Different Spacer Layer Thickness on GaAs Substrate by Molecular Beam Epitaxy." Advanced Science Letters 24, no. 8 (August 1, 2018): 5574–77. http://dx.doi.org/10.1166/asl.2018.12152.
Повний текст джерелаYao, Jian Ming, Ling Min Kong, and Shi Lai Wang. "Effects of a InGaAs Strained Layer on Structures and Photoluminescence Characteristics of InAs Quantum Dots." Advanced Materials Research 148-149 (October 2010): 897–902. http://dx.doi.org/10.4028/www.scientific.net/amr.148-149.897.
Повний текст джерелаMehta, M., D. Reuter, M. Kamruddin, A. K. Tyagi, and A. D. Wieck. "Influence of Post-Implantation Annealing Parameters on the Focused Ion Beam Directed Nucleation of InAs Quantum Dots." Nano 10, no. 04 (June 2015): 1550049. http://dx.doi.org/10.1142/s1793292015500496.
Повний текст джерелаVolkova, N. S., A. P. Gorshkov, L. A. Istomin, A. V. Zdoroveyshchev, and S. Levichev. "Diagnostic of the Bimodal Distribution of InAs/GaAs Quantum Dots by Means of a Simple Nondestructive Method Based on the Photoelectrical Spectroscopy." Nano 11, no. 10 (September 29, 2016): 1650109. http://dx.doi.org/10.1142/s1793292016501095.
Повний текст джерелаSchramboeck, M., A. M. Andrews, P. Klang, W. Schrenk, G. Hesser, F. Schäffler, and G. Strasser. "InAs/AlGaAs QDs for intersubband devices." Superlattices and Microstructures 44, no. 4-5 (October 2008): 411–15. http://dx.doi.org/10.1016/j.spmi.2007.10.010.
Повний текст джерелаKim, Eui Tae, and Anupam Madhukar. "Growth Kinetics and Formation of Uniform Self-Assembled InAs/GaAs Quantum Dots at." Solid State Phenomena 124-126 (June 2007): 539–42. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.539.
Повний текст джерелаLi, Zhan Guo, Ming Hui You, Guo Jun Liu, Xin Gao, Lin Li, Zhi Peng Wei, Mei Li, Yong Wang, Xiao Hua Wang, and Lian He Li. "Low-Density InAs Quantum Dots Growth by Molecular Beam Epitaxy." Advanced Materials Research 442 (January 2012): 12–15. http://dx.doi.org/10.4028/www.scientific.net/amr.442.12.
Повний текст джерелаAlshehri, Khairiah, Abdelmajid Salhi, Niyaz Ahamad Madhar, and Bouraoui Ilahi. "Size and Shape Evolution of GaAsSb-Capped InAs/GaAs Quantum Dots: Dependence on the Sb Content." Crystals 9, no. 10 (October 15, 2019): 530. http://dx.doi.org/10.3390/cryst9100530.
Повний текст джерелаRakhlin, M. V., K. G. Belyaev, G. V. Klimko, I. S. Mukhin, S. V. Ivanov, and A. A. Toropov. "Red single-photon emission from InAs/AlGaAs quantum dots." Физика и техника полупроводников 52, no. 4 (2018): 480. http://dx.doi.org/10.21883/ftp.2018.04.45829.18.
Повний текст джерелаРахлин, М. В., К. Г. Беляев, Г. В. Климко, И. С. Мухин, С. В. Иванов та А. А. Торопов. "Однофотонное излучение квантовых точек InAs/AlGaAs". Физика твердого тела 60, № 4 (2018): 687. http://dx.doi.org/10.21883/ftt.2018.04.45675.310.
Повний текст джерелаHuang, Xiaoying, Rongbin Su, Jiawei Yang, Mujie Rao, Jin Liu, Ying Yu, and Siyuan Yu. "Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate." Nanomaterials 11, no. 4 (April 6, 2021): 930. http://dx.doi.org/10.3390/nano11040930.
Повний текст джерелаRuiz, Nazaret, Daniel Fernandez, Esperanza Luna, Lazar Stanojević, Teresa Ben, Sara Flores, Verónica Braza, et al. "Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate." Nanomaterials 12, no. 14 (July 21, 2022): 2504. http://dx.doi.org/10.3390/nano12142504.
Повний текст джерелаKim, Hyung Seok, Ju Hyung Suh, Chan Gyung Park, Sang Jun Lee, Sam Kyu Noh, Jin Dong Song, Yong Ju Park, Won Jun Choi, and Jung Il Lee. "Microstructures and Growth Characteristics of Self-Assembled InAs/GaAs Quantum Dots Investigated by Transmission Electron Microscopy." Advanced Materials Research 26-28 (October 2007): 1207–10. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.1207.
Повний текст джерелаFANG, ZHIDAN, ZHENG GONG, ZHENHUA MIAO, and ZHICHUAN NIU. "TUNING OF EMISSION WAVELENGTH OF InAs/GaAs QUANTUM DOTS SANDWICHED BY COMBINATION LAYERS." International Journal of Nanoscience 05, no. 06 (December 2006): 847–52. http://dx.doi.org/10.1142/s0219581x0600525x.
Повний текст джерелаNowozin, Tobias, Michael Narodovitch, Leo Bonato, Dieter Bimberg, Mohammed N. Ajour, Khaled Daqrouq, and Abdullah Balamash. "Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure." Journal of Nanotechnology 2013 (2013): 1–4. http://dx.doi.org/10.1155/2013/797964.
Повний текст джерелаSuraprapapich, S., S. Thainoi, S. Kanjanachuchai, and S. Panyakeow. "Self-Assembled InAs Lateral Quantum Dot Molecules Growth on (001) GaAs by Thin-Capping-and-Regrowth MBE Technique." Solid State Phenomena 121-123 (March 2007): 395–400. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.395.
Повний текст джерелаKuznetsova, Y. A., F. B. Bayramov, V. V. Toporov, B. H. Bairamov, V. Yu Rud, and A. P. Glinushkin. "Recombination radiation of heteroepitaxial structures with InAs quantum dots grown on surface of (311)B GaAs by MBE." IOP Conference Series: Earth and Environmental Science 1096, no. 1 (October 1, 2022): 012032. http://dx.doi.org/10.1088/1755-1315/1096/1/012032.
Повний текст джерелаSánchez Trujillo, Diego Javier, Jhon Jairo Prías Barragán, Hernando Ariza Calderón, Álvaro Orlando Pulzara Mora, and Máximo López López. "Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots." Superficies y Vacío 30, no. 4 (December 15, 2017): 56–60. http://dx.doi.org/10.47566/2017_syv30_1-040056.
Повний текст джерелаBochorishvili, Beka, and Hariton M. Polatoglou. "Interacting Double InAs/GaAs Quantum Dots of Cylindrical Symmetry." Journal of Nano Research 10 (April 2010): 87–92. http://dx.doi.org/10.4028/www.scientific.net/jnanor.10.87.
Повний текст джерелаOshima, Jin, Nobuhiko Ozaki, Hisaya Oda, Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto, and Richard A. Hogg. "Near-infrared dual-wavelength surface-emitting light source using InAs quantum dots resonant with vertical cavity modes." Japanese Journal of Applied Physics 61, SD (March 24, 2022): SD1003. http://dx.doi.org/10.35848/1347-4065/ac5b24.
Повний текст джерелаJanney, Eathan, and Guillermo Muñoz-Matutano. "Interactive Musical Display of Quantum Dot Emission Spectra." Leonardo 49, no. 5 (October 2016): 440–41. http://dx.doi.org/10.1162/leon_a_01293.
Повний текст джерелаYang, B., and E. Pan. "Elastic Fields of Quantum Dots in Multilayered Semiconductors: A Novel Green’s Function Approach." Journal of Applied Mechanics 70, no. 2 (March 1, 2003): 161–68. http://dx.doi.org/10.1115/1.1544540.
Повний текст джерелаZhou, G. Y., Y. H. Chen, X. L. Zhou, B. Xu, X. L. Ye, and Z. G. Wang. "Different growth mechanisms of bimodal InAs/GaAs QDs." Physica E: Low-dimensional Systems and Nanostructures 43, no. 1 (November 2010): 308–11. http://dx.doi.org/10.1016/j.physe.2010.08.001.
Повний текст джерелаJia, Guo-zhi, Jiang-hong Yao, Yong-chun Shu, Xiao-dong Xing, and Biao Pi. "Quantum rings formed in InAs QDs annealing process." Applied Surface Science 255, no. 8 (February 2009): 4452–55. http://dx.doi.org/10.1016/j.apsusc.2008.11.042.
Повний текст джерелаWang, Kun, Qiang He, Deren Yang, and Xiaodong Pi. "Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots." Nanomaterials 13, no. 2 (January 9, 2023): 277. http://dx.doi.org/10.3390/nano13020277.
Повний текст джерелаLIN, Y. G., C. H. WU, S. L. TYAN, S. D. LIN, and C. P. LEE. "PHOTOLUMINESCENCE OF ULTRA SMALL InAs/GaAs QUANTUM DOTS." Modern Physics Letters B 19, no. 18 (August 10, 2005): 907–17. http://dx.doi.org/10.1142/s021798490500892x.
Повний текст джерелаIslam, Sk Masiul, and P. Banerji. "Size effect of InAs quantum dots grown by metal organic chemical vapor deposition technique in storing electrical charges for memory applications." RSC Advances 5, no. 9 (2015): 6906–11. http://dx.doi.org/10.1039/c4ra13317j.
Повний текст джерелаLiu, Guang Yan, and Wen Cai Wang. "Growth and Characterization of InAs Quantum Dots on GaAsSb." Applied Mechanics and Materials 184-185 (June 2012): 1001–5. http://dx.doi.org/10.4028/www.scientific.net/amm.184-185.1001.
Повний текст джерелаHolewa, Paweł, Jakub Jasiński, Artem Shikin, Elizaveta Lebedkina, Aleksander Maryński, Marcin Syperek, and Elizaveta Semenova. "Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography." Materials 14, no. 2 (January 14, 2021): 391. http://dx.doi.org/10.3390/ma14020391.
Повний текст джерелаBoonpeng, P., S. Panyakeow, and S. Ratanathammaphan. "In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots." Advanced Materials Research 31 (November 2007): 132–34. http://dx.doi.org/10.4028/www.scientific.net/amr.31.132.
Повний текст джерелаKRYZHANOVSKAYA, N. V., A. G. GLADYSHEV, S. A. BLOKHIN, A. P. VASIL'EV, E. S. SEMENOVA, A. E. ZHUKOV, M. V. MAXIMOV, et al. "HIGH TEMPERATURE STABILITY OF OPTICAL PROPERTIES OF InAs QUANTUM DOTS REALIZED BY CONTROLLING OF QUANTUM DOTS ELECTRONIC SPECTRUM." International Journal of Nanoscience 06, no. 03n04 (June 2007): 283–86. http://dx.doi.org/10.1142/s0219581x07004742.
Повний текст джерелаIlahi, Bouraoui, Manel Souaf, Mourad Baira, Jawaher Alrashdi, Larbi Sfaxi, Abdulaziz Alhazaa, and Hassen Maaref. "Evolution of InAs/GaAs QDs Size with the Growth Rate: A Numerical Investigation." Journal of Nanomaterials 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/847018.
Повний текст джерелаQiu, Zheng Rong, and Hong Yu. "Optical Properties of Silicon Quantum Dots." Key Engineering Materials 483 (June 2011): 760–64. http://dx.doi.org/10.4028/www.scientific.net/kem.483.760.
Повний текст джерелаTanaka, Motoyuki, Keichiro Banba, Tomah Sogabe, and Koichi Yamaguchi. "InAs/GaAsSb in-plane ultrahigh-density quantum dot lasers." Applied Physics Express 14, no. 12 (November 22, 2021): 124002. http://dx.doi.org/10.35848/1882-0786/ac3542.
Повний текст джерелаYin, Zong You, Xiao Hong Tang, Ji Xuan Zhang, Deny Sentosa, Jing Hua Teng, An Yan Du, and Mee Koy Chin. "Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes." Advanced Materials Research 31 (November 2007): 17–19. http://dx.doi.org/10.4028/www.scientific.net/amr.31.17.
Повний текст джерелаSala, Elisa M., Max Godsland, Young In Na, Aristotelis Trapalis, and Jon Heffernan. "Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer." Nanotechnology 33, no. 6 (November 19, 2021): 065601. http://dx.doi.org/10.1088/1361-6528/ac3617.
Повний текст джерелаLe, Thu-Huong, Dang Thi Thanh Le, and Nguyen Van Tung. "Synthesis of Colloidal Silicon Quantum Dot from Rice Husk Ash." Journal of Chemistry 2021 (March 2, 2021): 1–9. http://dx.doi.org/10.1155/2021/6689590.
Повний текст джерелаShang, Xiangjun, Hanqing Liu, Xiangbin Su, Shulun Li, Huiming Hao, Deyan Dai, Zesheng Chen, Haiqiao Ni, and Zhichuan Niu. "Light Hole Excitons in Strain-Coupled Bilayer Quantum Dots with Small Fine-Structure Splitting." Crystals 12, no. 8 (August 10, 2022): 1116. http://dx.doi.org/10.3390/cryst12081116.
Повний текст джерелаСеменов, M. Б., В. Д. Кревчик, Д. O. Филатов, A. В. Шорохов, A. П. Шкуринов, И. А. Ожередов, П. В. Кревчик та ін. "Диссипативное туннелирование электронов в вертикально связанных двойных асимметричных квантовых точках InAs/GaAs(001)". Журнал технической физики 91, № 10 (2021): 1431. http://dx.doi.org/10.21883/jtf.2021.10.51354.66-21.
Повний текст джерелаWang, Tong, Tim J. Puchtler, Saroj K. Patra, Tongtong Zhu, Muhammad Ali, Tom J. Badcock, Tao Ding, Rachel A. Oliver, Stefan Schulz, and Robert A. Taylor. "Direct generation of linearly polarized single photons with a deterministic axis in quantum dots." Nanophotonics 6, no. 5 (July 21, 2017): 1175–83. http://dx.doi.org/10.1515/nanoph-2017-0027.
Повний текст джерелаIkeri, H. I., A. I. Onyia, and F. N. Kalu. "Hot carrier exploitation strategies and model for efficient solar cell applications." Chalcogenide Letters 18, no. 11 (November 2021): 745–57. http://dx.doi.org/10.15251/cl.2021.1811.745.
Повний текст джерелаShi, G. X., Bo Xu, P. Jin, X. L. Ye, C. X. Cui, C. L. Zhang, J. Wu, and Z. G. Wang. "The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer." Materials Science Forum 475-479 (January 2005): 1791–94. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1791.
Повний текст джерелаLiu, Jian Qing, Yong Hai Chen, Bo Xu, and Zhan Guo Wang. "Growth of InAs Quantum Wires with Ga-Assisted Deoxidation on Cleaved-Edge GaAs (110) Surface." Advanced Materials Research 341-342 (September 2011): 73–76. http://dx.doi.org/10.4028/www.scientific.net/amr.341-342.73.
Повний текст джерелаSTIFF-ROBERTS, ADRIENNE D. "HYBRID NANOMATERIALS FOR MULTI-SPECTRAL INFRARED PHOTODETECTION." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 165–72. http://dx.doi.org/10.1142/s0129156407004382.
Повний текст джерелаChatzarakis, N. G., E. A. Amargianitakis, S. Germanis, A. Stavrinidis, G. Konstantinidis, Z. Hatzopoulos, and N. T. Pelekanos. "Redshifted biexciton and trion lines in strongly confined (211)B InAs/GaAs piezoelectric quantum dots." Journal of Applied Physics 131, no. 12 (March 28, 2022): 123101. http://dx.doi.org/10.1063/5.0084931.
Повний текст джерелаHansen, L., A. Ankudinov, F. Bensing, J. Wagner, G. Ade, P. Hinze, V. Wagner, J. Geurts, and A. Waag. "Growth and Characterization of Inas Quantum Dots on Silicon." MRS Proceedings 583 (1999). http://dx.doi.org/10.1557/proc-583-33.
Повний текст джерелаHolewa, Paweł, Shima Kadkhodazadeh, Michał Gawełczyk, Paweł Baluta, Anna Musiał, Vladimir G. Dubrovskii, Marcin Syperek, and Elizaveta Semenova. "Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties." Nanophotonics, January 28, 2022. http://dx.doi.org/10.1515/nanoph-2021-0482.
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