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Статті в журналах з теми "InAs QDs on silicon"
Abouzaid, Oumaima, Hussein Mehdi, Mickael Martin, Jérémy Moeyaert, Bassem Salem, Sylvain David, Abdelkader Souifi, et al. "O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate." Nanomaterials 10, no. 12 (December 7, 2020): 2450. http://dx.doi.org/10.3390/nano10122450.
Повний текст джерелаLi, Yuan-He, Zhi-Yao Zhuo, Jian Wang, Jun-Hui Huang, Shu-Lun Li, Hai-Qiao Ni, Zhi-Chuan Niu, Xiu-Ming Dou, and Bao-Quan Sun. "Controlling exciton spontaneous emission of quantum dots by Au nanoparticles." Acta Physica Sinica 71, no. 6 (2022): 067804. http://dx.doi.org/10.7498/aps.71.20211863.
Повний текст джерелаYamamoto, N., K. Akahane, S. Gozu, and Noboru Ohtani. "Growth of InAs Quantum Dots on a Low Lattice-Mismatched AlGaSb Layer Prepared on GaAs (001) Substrates." Solid State Phenomena 99-100 (July 2004): 49–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.49.
Повний текст джерелаSaravanan, S. "Stacking of InAs QDs with Different Spacer Layer Thickness on GaAs Substrate by Molecular Beam Epitaxy." Advanced Science Letters 24, no. 8 (August 1, 2018): 5574–77. http://dx.doi.org/10.1166/asl.2018.12152.
Повний текст джерелаYao, Jian Ming, Ling Min Kong, and Shi Lai Wang. "Effects of a InGaAs Strained Layer on Structures and Photoluminescence Characteristics of InAs Quantum Dots." Advanced Materials Research 148-149 (October 2010): 897–902. http://dx.doi.org/10.4028/www.scientific.net/amr.148-149.897.
Повний текст джерелаMehta, M., D. Reuter, M. Kamruddin, A. K. Tyagi, and A. D. Wieck. "Influence of Post-Implantation Annealing Parameters on the Focused Ion Beam Directed Nucleation of InAs Quantum Dots." Nano 10, no. 04 (June 2015): 1550049. http://dx.doi.org/10.1142/s1793292015500496.
Повний текст джерелаVolkova, N. S., A. P. Gorshkov, L. A. Istomin, A. V. Zdoroveyshchev, and S. Levichev. "Diagnostic of the Bimodal Distribution of InAs/GaAs Quantum Dots by Means of a Simple Nondestructive Method Based on the Photoelectrical Spectroscopy." Nano 11, no. 10 (September 29, 2016): 1650109. http://dx.doi.org/10.1142/s1793292016501095.
Повний текст джерелаSchramboeck, M., A. M. Andrews, P. Klang, W. Schrenk, G. Hesser, F. Schäffler, and G. Strasser. "InAs/AlGaAs QDs for intersubband devices." Superlattices and Microstructures 44, no. 4-5 (October 2008): 411–15. http://dx.doi.org/10.1016/j.spmi.2007.10.010.
Повний текст джерелаKim, Eui Tae, and Anupam Madhukar. "Growth Kinetics and Formation of Uniform Self-Assembled InAs/GaAs Quantum Dots at." Solid State Phenomena 124-126 (June 2007): 539–42. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.539.
Повний текст джерелаLi, Zhan Guo, Ming Hui You, Guo Jun Liu, Xin Gao, Lin Li, Zhi Peng Wei, Mei Li, Yong Wang, Xiao Hua Wang, and Lian He Li. "Low-Density InAs Quantum Dots Growth by Molecular Beam Epitaxy." Advanced Materials Research 442 (January 2012): 12–15. http://dx.doi.org/10.4028/www.scientific.net/amr.442.12.
Повний текст джерелаДисертації з теми "InAs QDs on silicon"
Hussain, Sajid. "Synthesis of Ordered semiconductor Nanostructures by Directed Self-Assembly for Photonic Applications." Doctoral thesis, Università degli studi di Trieste, 2014. http://hdl.handle.net/10077/9970.
Повний текст джерелаRiassunto (Abstract) La fabbricazione di punti quantici (quantum dots, QD) auto-assemblati è una tematica di particolare rilevanza a causa delle loro possibilità di applicazione in dispositivi optoelettronici. Nel presente lavoro, ci siamo prefissi di ottenere array di QD di semiconduttore altamente uniformi, con lo scopo di raggiungere un controllo completo sulla loro distribuzione spaziale, ed un’uniformità spettrale superiore, rispetto a QD auto-assemblati convenzionali. Il metodo consiste in un approccio combinato top-down ebottom-up: QD auto-assemblati vengono cresciuti tramite Epitassia a Fasci Molecolari (MolecularBeam Epitaxy, MBE) su una superficie pre-patternata con un array regolare di buchi. Nella prima parte di questo lavoro di tesi, abbiamo ottimizzato la crescita di punti di InAs su substrati patternati di GaAs. Nella maggior parte dei lavori precedenti, i substrati vengono patternati tramite litografia elettronica (Electron BeamLitography, EBL), che non è la tecnica ottimale per l’applicazione a dispositivi broad-area, a causa della sua natura seriale e degli alti costi. Il metodo più indicato per superare questa limitazione è la scelta di un approccio litografico alternativo come la litografia a nanostampa (Nanoimprint Lithography,NIL), che ha come vantaggi un alto volume di produzione e dei costi più ridotti. Comunque, esistono soltanto pochi studi sull’uso della NIL per il patterning di superfici di GaAs. Nella maggior parte dei casi, viene usata la variante dell’UV-NIL, che richiede l’uso addizionale di una maschera di SiO2, con conseguente complicazione del processo. In questo lavoro, abbiamo utilizzato la forma di NIL più semplice, che non richiede alcun processo addizionale (quali il trattamento in UV o uno strato di SiO2). L’attacco chimico del GaAs è stato effettuato tramite wetetcìhing, per ottenere superfici prive di difetti, ed è stato ottimizzato per ottenere nanopori con le dimensioni laterali e la profondità desiderate. I substrati patternati di GaAs, dopo un processo di pulizia, vengono usati per la crescita controllata di QD nell’MBE. Abbiamo ottimizzato i protocolli di crescita per migliorare le proprietà strutturali ed ottiche dei QD, con lo scopo di migliorare le prestazioni di dispositivi optoelettronici. Abbiamo esaminato l’effetto del desorbimento dell’ossido superficiale a bassa temperatura tramite fasci di gallio (tecnica già applicata con successo in precedenza)e l’effetto della crescita sul substratodi uno strato di GaAs sulla forma e dimensione dei buchi, per migliorare l’occupazione di QD singoli nei buchi stessi. Abbiamo adottato un approccio alternativo per rimuovere l’ossido superficiale usando fasci di indio. Questo approccio è stato adottato siccome l’eventuale indio in eccesso può essere desorbito facilmente dalla superficie di GaAs scaldando a temperature che non alterino il profilo dei buchi. Inoltre, abbiamo osservato che nei nostri array patternati il desorbimento tramite fasci di indio ha anche l’effetto benefico di preservare meglio la forma dei buchi dopo la deposizione dello strato di GaAs, il che è di grande aiuto per migliorare l’occupazione di QD singoli e l’uniformità dei QD. Abbiamo usato la spettroscopia di fotoluminescenza (photoluminescence, PL) a bassa temperatura per esaminare le proprietà ottiche dei punti di InAs/GaAs. I risultati sono confrontabili o migliori, rispetto ai pochi studi simili effettuati su punti cresciuti su substrati definiti con la NIL, ed hanno il potenziale di raggiungere l’allargamento spettrale non-omogeneo ottenuto su QD controllati ottimizzati realizzati con la tecnica EBL. Nella seconda parte della tesi, abbiamo esteso questa tecnica alla crescita selettiva di punti InAs/GaAs su silicio patternato. Il silicio è il materiale principale per i dispositivi a semiconduttore (90%). Comunque, il gap di energia indiretto del silicio limita la realizzazione di dispositivi optoelettronici efficienti. D’altra parte, a causa del loro gap in molti casi diretto, i semiconduttori III-V hanno proprietà ottiche ed optoelettroniche eccellenti. L’integrazione di semiconduttori composti III-V su Si ha una grande prospettiva per la realizzazione di circuiti fotonici integrati. Tuttavia, l’integrazione GaAs/Si è limitata fortemente dalla loro differenza del 4% nel parametro reticolare, che induce dislocazioni e difetti nel materiale cresciuto sul substrato di silicio e previene l’emissione di luce. Svariati approcci sono stati esplorati per l’integrazione III-V/Si, quali la crescita di nanofili, la fusione dei substrati, l’utilizzo di strati spessi di rilassamento e l’applicazione di composizioni di materiali per accomodare i parametri reticolari. La crescita di strati spessi aumenta la complessità dei processi ed il costo dei materiali. Un’alternativa sarebbe quindi la crescita diretta di nanostrutture III-V su silicio. La crescita di QD III-V su substrati Si patternati dovrebbe aiutare a ridurre i difetti a causa di effetti di taglia e rilassamento della tensione laterale. Tuttavia, ad oggi esistono solo pochi studi su substrati di Si patternati, e la maggior parte includono maschere di SiO2con grosse periodicità dei buchi (1 µm) e piccole aree patternate (1 mm2) definite tramite EBL. In questo lavoro abbiamo cresciuto nanostrutture III-V direttamente su substrati patternati di Si con array di buchi densi (periodo 300 nm) e grandi aree patternate attraverso la tecnica NIL. Abbiamo ottimizzato l’attacco chimico del SI e la passivazione della sua superficie tramite terminazione in idrogeno, allo scopo di facilitare il desorbimento dell’ossido nella camera MBE a temperature relativamente basse. Il desorbimento dell’ossido ed i protocolli di crescita sono stati ottimizzati allo scopo di ottenere array di punti uniformi. Abbiamo usato la spettroscopia EDS (Energy Dispersive X-rayspectroscopy) per verificare la presenza di InAs e GaAs solo in corrispondenza dei buchi. Verranno anche mostrati risultati preliminari di spettroscopia PL per controllare le proprietà ottiche dei punti InAs/GaAs.
Abstract The fabrication of self-assembled quantum dots (QDs) is a topic of high current interest due to their vast applications in optical devices. In this research work, our aim is to obtain highly uniform arrays of semiconductor QDs to reach a complete control on their spatial distribution and a superior spectral uniformity, with respect to conventional self-assembled dots. The method consists of a combined top-down and bottom-up approach: self-assembled QDs are grown by molecular beam epitaxy (MBE) on a pre-patterned surface with a regular array of holes. In the first part of this thesis work, we have optimized the growth of InAs dots on patterned GaAs substrates. In most of the research efforts, GaAs substrates are patterned through electron beam lithography (EBL), which is not the optimal technique for application in broad-area devices, due to its serial nature and high cost. The finest way to overcome this limitation can be through choosing an alternative lithographic approach like nanoimprint lithography (NIL) for patterning of the GaAs surfaces, which has the advantage of high throughput and low cost. However, there are only few studies available that have used NIL for the patterning of GaAs surfaces. In most of the cases, instead of NIL, UV-NIL is being used for patterning, that requires an additional layer of SiO2 for masking, which also complicates the process. In this work, we have tried to use the simplest form of NIL for patterning, which requires no additional processing (like UV treatment or SiO2 layer). Wet etching process is chosen for GaAs etching to get defect-free surfaces, and is optimized to get the nanopores with required lateral dimensions and depth. These patterned GaAs substrates after optimizing all cleaning procedures are used for further growth of site-controlled QDs in MBE. We have optimized the growth protocols to improve the structural and optical properties of the dots, with the aim of improving the performance of optoelectronic devices. We have examined the effect of the low-temperature oxide desorption by means of Ga beams (which was already applied successfully to patterned GaAs surfaces) and the effect of the GaAs buffer layer growth on the hole shape and size, to improve the single-dot occupancy of the patterned holes. We have adopted an alternative approach to remove the oxide layer using In beams. This approach have been adopted because excess In can be easily desorbed from GaAs surface just by heating it to temperatures that do not alter the hole profiles. Furthermore, we have observed that for our patterned arrays In-assisted desorption has also the beneficial effect to better preserve the hole shape after the growth of the GaAs buffer layer, which ultimately helps in improving the single-dot occupancy, as well as the structural uniformity of the dots. We have used low temperature photoluminescence (PL) spectroscopy to assess the optical properties of InAs/GaAs dots. The results compare favourably with the few similar dot arrays previously grown on NIL-defined patterns, and have the potential to match the inhomogeneous broadening reported for optimized site-controlled dots on EBL-defined patterns. In the second part of the thesis, we have extended this technique to the selective growth of InAs/GaAs QDs on patterned silicon. Silicon is the main material for semiconductor devices (90%). However, the indirect bandgap of silicon prevents the realization of efficient light emitting devices. On the other hand, due to their direct bandgap in many cases, III-V semiconductors have excellent optical properties and optoelectronic capabilities. Integration of III-V compound semiconductor with Si has a broad prospective for the realization of photonic integrated circuits. However, GaAs/Si integration is largely limited by their 4% lattice mismatch, which induces dislocations and defects in the grown material on the Si substrate and ultimately prevents light emission. Several approaches are under exploration for III-V/Si integration like nanowire growth, wafer fusion techniques, using thick relaxation layers and applying lattice matched material compositions. Growth of these buffer layers increases the process complexity and material cost. A perfect alternative would thus be the direct epitaxial growth of III-V nanostructures on silicon. Growth of III-V quantum dots on pre-patterned Si substrates should help to reduce defects because of size effect and effective lateral stress relaxation due to the presence of facet edges and side walls. However, there are limited research efforts available on patterned Si substrates including mostly on SiO2 as mask with large periods (1µm) and small patterned areas (1mm2) defined by EBL. In our work, we have grown III-V nanostructures directly on patterned Si substrates with dense hole arrays (period 300nm) and larger patterned areas through nanoimprint lithography. We optimized the dry etching of Si and its surface passivation with H-termination, in order to facilitate oxide desorption in the MBE at relatively low temperatures. Oxide desorption and growth protocols were optimized in order to obtain uniform dot arrays. We used energy-dispersive X-ray spectroscopy (EDS) analysis for the characterization of InAs/GaAs QDs to verify the presence of GaAs and InAs only at the hole location. We will also show preliminary results using photoluminescence spectroscopy to assess the optical properties of InAs/GaAs dots.
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Iden, Simon Riis. "Exploring possibilities in AFM studies of InAs/GaAs QDs." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-16356.
Повний текст джерелаRajabi, Mina. "Process optimization of IR detectors based on In(Ga)Sb QDs in InAs matrix." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-108221.
Повний текст джерелаSun, Mingkun. "Numerical Study of Semiconductor Material Growth." University of Akron / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=akron1258343695.
Повний текст джерелаTang, M. "InAs/GaAs quantum-dot light emitting sources monolithically grown on silicon substrates." Thesis, University College London (University of London), 2016. http://discovery.ucl.ac.uk/1516051/.
Повний текст джерелаLee, A. D. "1300-nm InAs/GaAs quantum-dot lasers monolithically grown on silicon substrates." Thesis, University College London (University of London), 2015. http://discovery.ucl.ac.uk/1468566/.
Повний текст джерелаDhungana, Daya Sagar. "Growth of InAs and Bi1-xSBx nanowires on silicon for nanoelectronics and topological qubits by molecular beam epitaxy." Thesis, Toulouse 3, 2018. http://www.theses.fr/2018TOU30150/document.
Повний текст джерелаInAs and Bi1-xSbx nanowires with their distinct material properites hold promises for nanoelec- tronics and quantum computing. While the high electron mobility of InAs is interesting for na- noelectronics applications, the 3D topological insulator behaviour of Bi1-xSbx can be used for the realization of Majorana Fermions based qubit devices. In both the cases improving the quality of the nanoscale material is mandatory and is the primary goal of the thesis, where we study CMOS compatible InAs nanowire integration on Silicon and where we develop a new nanoscale topological insulator. For a full CMOS compatiblity, the growth of InAs on Silicon requires to be self-catalyzed, fully vertical and uniform without crossing the thermal budge of 450 °C. These CMOS standards, combined with the high lattice mismatch of InAs with Silicon, prevented the integration of InAs nanowires for nanoelectronics devices. In this thesis, two new surface preparations of the Silicon were studied involving in-situ Hydrogen gas and in-situ Hydrogen plasma treatments and leading to the growth of fully vertical and self-catalyzed InAs nanowires compatible with the CMOS limitations. The different growth mechanisms resulting from these surface preparations are discussed in detail and a switch from Vapor-Solid (VS) to Vapor- Liquid-Solid (VLS) mechanism is reported. Very high aspect ratio InAs nanowires are obtained in VLS condition: upto 50 nm in diameter and 3 microns in length. On the other hand, Bi1-xSbx is the first experimentally confirmed 3D topololgical insulator. In this new material, the presence of robust 2D conducting states, surrounding the 3D insulating bulk can be engineered to host Majorana fermions used as Qubits. However, the compostion of Bi1-xSbx should be in the range of 0.08 to 0.24 for the material to behave as a topological insula- tor. We report growth of defect free and composition controlled Bi1-xSbx nanowires on Si for the first time. Different nanoscale morphologies are obtained including nanowires, nanoribbons and nanoflakes. Their diameter can be 20 nm thick for more than 10 microns in length, making them ideal candidates for quantum devices. The key role of the Bi flux, the Sb flux and the growth tem- perature on the density, the composition and the geometry of nanoscale structures is investigated and discussed in detail
Vlasukova, L., F. Komarov, O. Milchanin, I. Parkhomenko, and J. Zuk. "Structural Peculiarities of A3B5 Nanocrystals Created in Si by Ion-Beam Synthesis." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35436.
Повний текст джерелаKhelifi, Rim. "Synthèse par faisceaux d'ions de nanocristaux semi-conducteurs fonctionnels en technologie silicium." Thesis, Strasbourg, 2015. http://www.theses.fr/2015STRAD006/document.
Повний текст джерелаSemiconductor nanocrystals can be used as quantum dots to produce band gap engineering by varying the nanocrystals size, which is a very interesting property for optoelectronic components. This work is dedicated to the creation of doped silicon nanocrystals embedded in SiO2 and binary (InAs and GaAs) and ternary nanocrystals of InxGa1-xAs embedded in Si and also to investigate their structural, electrical and optical properties. Ion beam synthesis allows a control of the nanocrystals amount and size. Structural characterizations were able to demonstrate the doping of silicon nanocrystals with phosphorus and arsenic at an average atomic concentration of 8 %. We have also shown the ability to modulate the size and the chemical composition of InxGa1-xAs nanocrystals in a large range by varying the implantation dose and the annealing temperature
Jacob, Rainer. "Scanning near-field infrared microspectroscopy on semiconductor structures." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-68317.
Повний текст джерелаDie optische Nahfeldmikroskopie hat viel Beachtung auf sich gezogen, da sie die einzige Technologie ist, welche die Untersuchung lokaler optischer Eigenschaften mit Auflösungen unterhalb der Beugungsgrenze ermöglicht. Speziell die streuende Nahfeldmikroskopie erlaubt die zerstörungsfreie Untersuchung von Oberflächen ohne Einschränkung der verwendbaren Wellenlängen. Die Nutzung ist jedoch durch das Vorhandensein entsprechender Lichtquellen beschränkt. Im Rahmen dieser Arbeit wurde diese Beschränkung durch Entwicklung eines streuenden Nahfeldmikroskops überwunden, das einen weit stimmbaren Freie-Elektronen-Laser als primäre Lichtquelle benutzt. Im theoretischen Teil wird gezeigt, dass ein optischer Kontrast erwartet werden kann, wenn Materialien mit unterschiedlichen Dielektrizitätskonstanten kombiniert werden. Es wird hergeleitet, dass diese Unterschiede in unterschiedlichen Streuquerschnitten für das gekoppelte System aus Messkopf und Probe resultieren. Diese Streuquerschnitte definieren die Stärke des Nahfeldsignals, welches auf unterschiedlichen Materialien gemessen werden kann. Ein optischer Kontrast kann also erwartet werden, wenn unterschiedliche Streuquerschnitte untersucht werden. Dass dieses Prinzip auch auf übereinander geschichtete oder sogar verborgene Strukturen angewendet werden kann, wird in dieser Doktorarbeit an zwei Probensystemen experimentell gezeigt. Im ersten Beispiel wurden die unterschiedlichen Dielektrizitätskonstanten durch örtliches Ändern der Ladungsträgerdichte in Silizium durch Bor-Implantation erreicht. Es wird gezeigt, dass die Dichte der freien Ladungsträger an Hand des optischen Kontrastes zwischen implantiertem und reinem Silizium ermittelt werden kann. Zu diesem Zweck wurden zwei unterschiedliche Ansätze verwendet, ein nicht-interferometrischer mittels variabler Wellenlängen und ein interferometrischer mit einer konstanten Wellenlänge. Weil diese Techniken gegensätzliche Informationen liefern, können sie genutzt werden, um die effektive Ladungsträgerdichte quantitativ zu bestimmen. Beide Ansätze lieferten konsistente Resultate für die Trägerdichte, welche sehr gut mit den Vorhersagen der Literatur übereinstimmt. Während die Strukturen im ersten Beispiel im Mikrometer-Bereich lagen, wird die Möglichkeit, verborgene Nanostrukturen zu untersuchen, an Hand einer Probe mit Indiumarsenid Quantenpunkten demonstriert. Diese sind von einer dicken Schicht Galliumarsenid bedeckt. Zum ersten Mal wird experimentell gezeigt, dass Übergänge zwischen Elektronenzuständen in einzelnen Quantenpunkten mit Nahfeldmikroskopie untersucht werden können. Durch die Messung der Nahfeld-Antwort der Quantenpunkte unter Änderung der Wellenlänge des eingestrahlten Lichtes war es möglich, charakteristische Nahfeld-Signaturen der einzelnen Quantenpunkte zu erhalten. Nahfeld-Kontraste bis zu 30 Prozent konnten für die resonante Anregung der Elektronen im Leitungsband der Indiumarsenid Punkte beobachtet werden
Частини книг з теми "InAs QDs on silicon"
Woodhead, Christopher. "Integration of III-V Based Type-II QDs with Silicon." In Springer Theses, 49–60. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-95013-6_5.
Повний текст джерелаYin, Zong You, Xiao Hong Tang, Ji Xuan Zhang, Deny Sentosa, Jing Hua Teng, An Yan Du, and Mee Koy Chin. "Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes." In Semiconductor Photonics: Nano-Structured Materials and Devices, 17–19. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.17.
Повний текст джерелаSharma, P., and Kang Wang. "Indium Arsenide (InAs) Islands on Silicon." In Dekker Encyclopedia of Nanoscience and Nanotechnology, Second Edition - Six Volume Set (Print Version). CRC Press, 2004. http://dx.doi.org/10.1201/9781439834398.ch98.
Повний текст джерела"of In-Ga intermixing between the InAs QDs and the overgrown barrier." In Compound Semiconductors 2002, 174–77. CRC Press, 2003. http://dx.doi.org/10.1201/9781482269109-35.
Повний текст джерелаMartin, Mickael, Thierry Baron, Yann Bogumulowicz, Huiwen Deng, Keshuang Li, Mingchu Tang, and Huiyun Liu. "GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications." In Post-Transition Metals [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94609.
Повний текст джерелаMartin, Mickael, Thierry Baron, Yann Bogumulowicz, Huiwen Deng, Keshuang Li, Mingchu Tang, and Huiyun Liu. "GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications." In Post-Transition Metals. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.94609.
Повний текст джерелаBenisty, Henri, Jean-Jacques Greffet, and Philippe Lalanne. "More confined electrons: Quantum dots and quantum wires." In Introduction to Nanophotonics, 246–72. Oxford University Press, 2022. http://dx.doi.org/10.1093/oso/9780198786139.003.0009.
Повний текст джерела"Quantum Dots: Properties and Applications." In Materials Research Foundations, 331–48. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901250-13.
Повний текст джерелаТези доповідей конференцій з теми "InAs QDs on silicon"
Zikova, M., A. Hospodkova, J. Pangrac, J. Oswald, and E. Hulicius. "GaAsSb/InAs QDs structures for advanced telecom lasers." In 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2016. http://dx.doi.org/10.1109/asdam.2016.7805894.
Повний текст джерелаHarbord, E., Y. Ota, M. Shirane, Y. Igarashi, N. Kumagai, S. Ohkouchi, S. Iwamoto, S. Yorosu, and Y. Arakawa. "Spin pumping InAs/GaAs QDs: controlling linear and circular polarization." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.k-8-2.
Повний текст джерелаJia, Wei, Zhi Liu, and Xunchun Wang. "Single-photon sources based on InAs/GaAs QDs for solar cell." In ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, edited by Jun Ohta, Nanjian Wu, and Binqiao Li. SPIE, 2013. http://dx.doi.org/10.1117/12.2035109.
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