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Статті в журналах з теми "Implantation damage"

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Автор: Grafiati

Опубліковано: 10 грудня 2022

Оновлено: 28 січня 2023

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1

Kieslich, A., H. Doleschel, J. P. Reithmaier, A. Forchel, and N. G. Stoffel. "Implantation induced damage in." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 99, no. 1-4 (May 1995): 594–97. http://dx.doi.org/10.1016/0168-583x(95)00323-1.

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2

Pernot, Julien, Jean Marie Bluet, Jean Camassel, and Lea Di Cioccio. "Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC." Materials Science Forum 353-356 (January 2001): 385–88. http://dx.doi.org/10.4028/www.scientific.net/msf.353-356.385.

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3

Bai, Minyu, Yulong Zhao, Binbin Jiao, Lingjian Zhu, Guodong Zhang, and Lei Wang. "Research on ion implantation in MEMS device fabrication by theory, simulation and experiments." International Journal of Modern Physics B 32, no. 14 (June 5, 2018): 1850170. http://dx.doi.org/10.1142/s0217979218501709.

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Ion implantation is widely utilized in microelectromechanical systems (MEMS), applied for embedded lead, resistors, conductivity modifications and so forth. In order to achieve an expected device, the principle of ion implantation must be carefully examined. The elementary theory of ion implantation including implantation mechanism, projectile range and implantation-caused damage in the target were studied, which can be regarded as the guidance of ion implantation in MEMS device design and fabrication. Critical factors including implantations dose, energy and annealing conditions are examined by simulations and experiments. The implantation dose mainly determines the dopant concentration in the target substrate. The implantation energy is the key factor of the depth of the dopant elements. The annealing time mainly affects the repair degree of lattice damage and thus the activated elements’ ratio. These factors all together contribute to ions’ behavior in the substrates and characters of the devices. The results can be referred to in the MEMS design, especially piezoresistive devices.

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4

Schaake, H. F. "Ion implantation damage in Hg0.8Cd0.2Te." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, no. 4 (July 1986): 2174–76. http://dx.doi.org/10.1116/1.574050.

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5

Parikh, N. R., D. A. Thompson, and G. J. C. Carpenter. "Ion implantation damage in CdS." Radiation Effects 98, no. 1-4 (September 1986): 289–300. http://dx.doi.org/10.1080/00337578608206119.

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6

Leclerc, Stephanie, Marie France Beaufort, Valerie Audurier, Alain Déclemy, and Jean François Barbot. "Helium Implantation Damage in SiC." Solid State Phenomena 108-109 (December 2005): 709–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.709.

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Single crystals SiC were implanted with 50 keV helium ions at room temperature and fluences in the range 1x1016 -1x1017 cm-2. The helium implantation induced swelling was studied through the measurement of the step height. The damage was studied by using X-ray diffraction measurements and the transmission electron microscopy observations. Degradation of mechanical properties is found after helium implantation.

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7

Swain, Santosh Kumar. "Vertigo following cochlear implantation: a review." International Journal of Research in Medical Sciences 10, no. 2 (January 29, 2022): 572. http://dx.doi.org/10.18203/2320-6012.ijrms20220310.

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Cochlear implantation may cause a detrimental effect on vestibular function and residual hearing. A significant number of patients with a cochlear implant present with vertigo. There are several mechanisms for dizziness following cochlear implantations. The causes may be surgical trauma, disruption of normal cochlear physiology, or ensuing endolymphatic hydrops. Vibratory trauma affecting the cochlea during cochleostomy plays a vital role in causing paroxysmal vertigo in patients with a cochlear implant. In addition, the vibrations affecting the cochlea are enough to dislodge otoconia particles. During cochlear implantation, it is necessary to insert an electrode array into the cochlea and thus the chance of damage to cochlear and function may happen. Dizziness or vertigo may develop after cochlear implantation. It usually occurs due to vestibular hypofunction. Vertigo following cochlear implantation has not frequently been documented in the literature previously. However, the increasing number of cochlear implantations in the current scenario is showing different postoperative complications like vestibular symptoms among patients with an implant. The vestibular symptoms following cochlear implantation range from a gradual sense of mild unsteadiness or lightheadedness to brief attacks of whirling vertigo. Vertigo following cochlear implantations affects the quality of life although vestibular therapy is often helpful to manage this condition. The article aims to provide a comprehensive review of vertigo following cochlear implantation.

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8

Tyagi, A. K. "Helium Implantation Damage in Metallic Glasses." Key Engineering Materials 13-15 (January 1987): 715–25. http://dx.doi.org/10.4028/www.scientific.net/kem.13-15.715.

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9

Keinonen, J., M. Hautala, E. Rauhala, and M. Erola. "Hydrogen-implantation-induced damage in silicon." Physical Review B 36, no. 2 (July 15, 1987): 1344–47. http://dx.doi.org/10.1103/physrevb.36.1344.

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10

Usov, I. O., D. Koleske, and K. E. Sickafus. "Ion implantation damage recovery in GaN." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267, no. 17 (September 2009): 2962–64. http://dx.doi.org/10.1016/j.nimb.2009.06.098.

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11

Peripolli, S., Marie France Beaufort, David Babonneau, Sophie Rousselet, P. F. P. Fichtner, L. Amaral, Erwan Oliviero, Jean François Barbot, and S. E. Donnelly. "A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon." Solid State Phenomena 108-109 (December 2005): 357–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.357.

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In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

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12

Myers, Edward R. "Damage removal following low energy ion implantation." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 906–7. http://dx.doi.org/10.1017/s0424820100106594.

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Ion implantation has become the most common method of doping in the semiconductor industry. Precise concentration profiles with exact spatial locations are achievable. However, direct implantation of the desired dopant does not always meet the stringent size requirements of ultra large scale integration (ULSI). Implantation of light ions, such as boron, tend to channel down open crystallographic orientations in crystalline substrates resulting in enhanced ion penetration and an extended doping tail. Channeling can be prevented by creation of an amorphous surface layer prior to the dopant implant. The amorphous layer can be created by implanting heavy isoelectronic ions, such as Ge+, or by implanting molecular dopant ions like BF2. Solid phase epitaxial (SPE) regrowth restores the crystallinity of the amorphous layer and activates the dopant. However, the ion implantation process damages the crystalline material adjacent to the amorphous- crystalline (a/c) interface.

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13

Yan, Li, Xue Feng An, Hai Chao Cui, and Xiao Su Yi. "Studies on Low-Velocity Impact Damage of Metal Ion Implanted Composite Laminates." Advanced Materials Research 311-313 (August 2011): 37–42. http://dx.doi.org/10.4028/www.scientific.net/amr.311-313.37.

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composite laminates, metal ion implantation, low-velocity impact damage, BVID Abstract. Metal ion implantation was carried out on composite laminates to modify the surface properties, so that after low-velocity impact barely visible impact damage (BVID) was easy to realize. Surface topography of laminates was observed by SEM. Microhardness and drop-weight impact was tested on composite laminates. The results showed that after metal ion implantation microhardness of laminates increased obviously and resin was easy to generate plastic deforming. Dent depth had been improved so as to realize visible impact damage more easily. And compression-after-impact (CAI) had not decreased. Comparison with Ti ion implantation, Cu ion implantation had better influence on realizing visible impact damage (VID).

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14

Zhang, Li Qing, Hui Ping Liu, Long Kang, Tong Min Zhang, Yu Guang Chen, Xian Long Zhang, Zhao Nan Ding, et al. "Microstructure Investigation of He⁺- Implanted and Post-Implantation-Annealed 4H-SiC." Key Engineering Materials 814 (July 2019): 302–6. http://dx.doi.org/10.4028/www.scientific.net/kem.814.302.

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Microstructure damage and evolution in 4H-SiC under He-ion implantation and post-annealing have been investigated by the combination of fourier transform infrared spectrometer (FTIR), Raman scattering spectroscopy and high resolution X-ray diffractometer (HRXRD). After implantation, the 4H-SiC specimen exhibits a heavy damage and some amorphous state appear. With increasing annealing temperature, to some extent recovery in damaged lattices was observed, as a result of the peaks of Raman and HRXRD regain their intensities. However, the reverse annealing behavior in damaged peaks was displayed after annealed at 973K. This reverse annealing effect was revealed to be due to the formation and the growth of He bubbles above 973K.

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15

Lam, Amy C. "Defect distribution of through-Oxide boron-Implanted silicon with and without fluorine incorporation." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1394–95. http://dx.doi.org/10.1017/s0424820100131607.

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Material defects generated during device processing can affect the performance of VLSI/ULSI devices. Ion implantation is the most common method of doping in the semiconductor industry. Implantation is usually performed with the wafers oriented 7° off the incident beam direction and through oxide to minimize the channeling effect. In order to obtain shallow p/n junctions for metal-oxide-semiconductor (MOS) devices, implantation of BF2+ molecular ions into silicon has been reported to have advantages over only B+ implantation. With the incorporation of fluorine, suppression of boron diffusion will be achieved by the emission of vacancies. However, BF2+ are heavy ions and can create considerable residual damage. Instead of BF2+ implantation, boron and fluorine implantations are done separately in our studies. As an alternative to fluorine implantation through oxide, fluorine could be introduced during thermal oxidation of silicon. Boron implantation of 3×l015/cm2 dose follows oxidation. The dosages for separate boron and fluorine implants are l×l015/cm2 and 2×l015/cm2 respectively, to attain the same elemental ratio as for BF2+ implantation.

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16

Rubanov, S., and P. R. Munroe. "Damage in III–V Compounds during Focused Ion Beam Milling." Microscopy and Microanalysis 11, no. 5 (March 4, 2005): 446–55. http://dx.doi.org/10.1017/s1431927605050294.

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The damage layers generated in III–V compounds exposed to energetic gallium ions in a focused ion beam (FIB) instrument have been characterized by transmission electron microscopy (TEM). The damage on the side walls of the milled trenches is in the form of amorphous layers associated with direct amorphization from the gallium beam, rather than from redeposition of milled material. However, the damage on the bottom of the milled trenches is more complex. For InP and InAs the damage layers include the presence of crystalline phases resulting from recrystallization associated heating from the incident beam and gallium implantation. In contrast, such crystalline phases are not present in GaAs. The thicknesses of the damage layers are greater than those calculated from theoretical models of ion implantation. These differences arise because the dynamic nature of FIB milling means that the energetic ion beams pass through already damaged layers. In InP recoil phosphorus atoms also cause significant damage.

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17

Turkot, B. A., D. V. Forbes, I. M. Robertson, J. J. Coleman, L. E. Rehn, M. A. Kirk, and P. M. Baldo. "Ion implantation damage in Al0.6Ga0.4As/GaAs heterostructures." Journal of Applied Physics 78, no. 1 (July 1995): 97–103. http://dx.doi.org/10.1063/1.360586.

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18

Losavio, A., B. Crivelli, F. Cazzaniga, M. Martini, G. Spinolo, and A. Vedda. "Oxide damage by ion implantation in silicon." Applied Physics Letters 74, no. 17 (April 26, 1999): 2453–55. http://dx.doi.org/10.1063/1.123878.

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19

Callec, R., and A. Poudoulec. "Characteristics of implantation‐induced damage in GaSb." Journal of Applied Physics 73, no. 10 (May 15, 1993): 4831–35. http://dx.doi.org/10.1063/1.354090.

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20

Kucheyev, S. O., J. S. Williams, J. Zou, S. J. Pearton, and Y. Nakagawa. "Implantation-produced structural damage in InxGa1−xN." Applied Physics Letters 79, no. 5 (July 30, 2001): 602–4. http://dx.doi.org/10.1063/1.1388881.

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21

Ibaraki, Nobuhiro, and Hiroyuki Shimizu. "Corneal damage after glass intraocular lens implantation." Journal of Cataract & Refractive Surgery 21, no. 2 (March 1995): 225–27. http://dx.doi.org/10.1016/s0886-3350(13)80515-9.

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22

Mathur, M. S., J. S. C. McKee, M. Liu, and D. He. "Damage induced in materials by ion implantation." Materials Science and Engineering: B 45, no. 1-3 (March 1997): 25–29. http://dx.doi.org/10.1016/s0921-5107(96)01901-0.

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23

Oliviero, E., S. Peripolli, P. F. P. Fichtner, and L. Amaral. "Characterization of neon implantation damage in silicon." Materials Science and Engineering: B 112, no. 2-3 (September 2004): 111–15. http://dx.doi.org/10.1016/j.mseb.2004.05.014.

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24

Friedland, E., N. G. van der Berg, J. Hanmann, and O. Meyer. "Damage ranges in metals after ion implantation." Surface and Coatings Technology 83, no. 1-3 (September 1996): 10–14. http://dx.doi.org/10.1016/0257-8972(95)02788-2.

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25

Bennett, D. J., and T. E. Price. "Implantation damage and its effect on channelling." Microelectronics Journal 24, no. 7 (November 1993): 811–17. http://dx.doi.org/10.1016/0026-2692(93)90025-a.

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26

Khmelnitsky, Roman A., Valeriy A. Dravin, Alexey A. Tal, Evgeniy V. Zavedeev, Andrey A. Khomich, Alexander V. Khomich, Alexander A. Alekseev, and Sergey A. Terentiev. "Damage accumulation in diamond during ion implantation." Journal of Materials Research 30, no. 9 (February 12, 2015): 1583–92. http://dx.doi.org/10.1557/jmr.2015.21.

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27

Callec, R., A. Poudoulec, M. Salvi, H. L'Haridon, P. N. Favennec, and M. Gauneau. "Ion implantation damage and annealing in GaSb." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 80-81 (June 1993): 532–37. http://dx.doi.org/10.1016/0168-583x(93)96175-c.

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28

Akano, U. G., I. V. Mitchell, F. R. Shepherd, and C. J. Miner. "Ion implantation damage of InP and InGaAs." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106, no. 1-4 (December 1995): 308–12. http://dx.doi.org/10.1016/0168-583x(95)00724-5.

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29

Priolo, F., C. Spinella, E. Albertazzi, M. Bianconi, G. Lulli, R. Nipoti, J. K. N. Lindner, et al. "Ion implantation induced damage in relaxed Si0.75Ge0.25." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 112, no. 1-4 (May 1996): 301–4. http://dx.doi.org/10.1016/0168-583x(95)01010-6.

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30

Friedland, E., and M. Hayes. "Damage profiles in MgO after ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 65, no. 1-4 (March 1992): 287–90. http://dx.doi.org/10.1016/0168-583x(92)95051-r.

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31

Ratcliff, Thomas, Avi Shalav, Kean Chern Fong, Robert Elliman, and Andrew Blakers. "Influence of Implantation Damage on Emitter Recombination." Energy Procedia 55 (2014): 272–79. http://dx.doi.org/10.1016/j.egypro.2014.08.080.

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32

McHargue, C. J., G. C. Farlow, G. M. Begun, J. M. Williams, C. W. White, B. R. Appleton, P. S. Sklad, and P. Angelini. "Damage accumulation in ceramics during ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 16, no. 2-3 (June 1986): 212–20. http://dx.doi.org/10.1016/0168-583x(86)90016-9.

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33

Leo, G., A. V. Drigo, and A. Traverse. "Specific behaviour of CdTe ion implantation damage." Materials Science and Engineering: B 16, no. 1-3 (January 1993): 123–27. http://dx.doi.org/10.1016/0921-5107(93)90027-k.

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34

He, Zhongdu, Zongwei Xu, Mathias Rommel, Boteng Yao, Tao Liu, Ying Song, and Fengzhou Fang. "Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC." Journal of Micromanufacturing 1, no. 2 (August 6, 2018): 115–23. http://dx.doi.org/10.1177/2516598418785507.

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Анотація:

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

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35

Sierakowski, Kacper, Rafal Jakiela, Boleslaw Lucznik, Pawel Kwiatkowski, Malgorzata Iwinska, Marcin Turek, Hideki Sakurai, Tetsu Kachi, and Michal Bockowski. "High Pressure Processing of Ion Implanted GaN." Electronics 9, no. 9 (August 26, 2020): 1380. http://dx.doi.org/10.3390/electronics9091380.

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It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-implantation annealing of the implanted material. Annealing also allows electrical activation of the dopant and creates areas of different electrical types in a semiconductor. However, such thermal treatment is particularly challenging in the case of gallium nitride since it decomposes at relatively low temperature (~800 °C) at atmospheric pressure. In order to remove the implantation damage in a GaN crystal structure, as well as activate the implanted dopants at ultra-high pressure, annealing process is proposed. It will be described in detail in this paper. P-type GaN implanted with magnesium will be briefly discussed. A possibility to analyze diffusion of any dopant in GaN will be proposed and demonstrated on the example of beryllium.

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36

Tien, Hui-Chi, and Fred H. Linthicum. "Histopathologic Changes in the Vestibule after Cochlear Implantation." Otolaryngology–Head and Neck Surgery 127, no. 4 (October 2002): 260–64. http://dx.doi.org/10.1067/mhn.2002.128555.

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OBJECTIVE: The study goal was to determine the histopathologic changes of the vestibular end organs after cochlear implantation and to relate them to clinical performance. STUDY DESIGN: To differentiate the effect of implantation from the disease process that originally destroyed the hearing, 11 pairs of temporal bones from unilateral implantees were studied with light microscopy to compare the vestibular damage in the implanted ears with that in the nonimplanted ears. RESULTS: Significant histopathologic damage of the vestibular end organs was noted in 6 patients (54.5%). The major histopathologic findings were fibrosis in the vestibule, saccule membrane distortion, new bone formation, and reactive neuromas. The scala vestibuli involvement, as a result of damage to the osseous spiral lamina or basilar membrane in cochlear basal turn, was highly correlated with vestibular damage (75%). CONCLUSIONS: Although the clinical incidence of balance disturbance after cochlear implantation is low, damage of the vestibular end organs may occur and be asymptomatic. Keeping the electrode array in the scala tympani will minimize vestibular damage.

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37

Yao, Xing Nan, Yue Hu Wang, and Yu Tian Wang. "Characterizing Defects Induced by Irradiation Damage in 6H-SiC." Defect and Diffusion Forum 382 (January 2018): 325–31. http://dx.doi.org/10.4028/www.scientific.net/ddf.382.325.

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There are many methods describing defects induced by ion implantation, but none are capable of describing it quantitatively. In order to solve this problem, we studied the magnetic change of silicon carbide (SiC) after ion implantation, and found that even if the implantation intensity and defects were increased, we found that all samples have the same paramagnetic background. In this paper, we use the paramagnetic characteristics shown by part of the defects to characterize the degree of defects. We studied how to characterize the concentration of the defect, using the Brillouin function to fit the data, validated the experimental results and analyzed the relationship between paramagnetic center concentration and defects.

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38

Jin, Jian-Yue, Jiarui Liu, Paul A. W. van der Heide, and Wei-Kan Chu. "Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation." Applied Physics Letters 76, no. 5 (January 31, 2000): 574–76. http://dx.doi.org/10.1063/1.125821.

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39

Zhong, Mian, Liang Yang, Guixia Yang, Zhonghua Yan, Zhijie Li, Wanguo Zheng, Xiaodong Yuan, Decheng Guo, Jin Huang, and Xia Xiang. "Dose-dependent optical properties and laser damage of helium-implanted sapphire." Canadian Journal of Physics 93, no. 7 (July 2015): 776–83. http://dx.doi.org/10.1139/cjp-2014-0424.

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A series of single crystalline Al2O3 samples are implanted with He+ ions at different nominal fluences up to 1 × 1018 ions/cm2 at room temperature. The microstructure evolution and optical properties as well as laser-induced damage threshold are investigated. Optical microscopic images show that the density and amount of defects increase with increasing implantation fluence. In addition, atomic force microscopic images indicate that the surface morphologies have changed distinctly when the fluence reaches 5 × 1017 ions/cm2 and above. After helium implantation, broad purple and green–yellow absorption bands as well as an obvious photoluminescence band at 330 nm are observed, respectively. With the increase of implantation fluence, the intensities of absorption bands increase greatly, whereas the intensity of the photoluminescence band decreases and tends to saturation. The original strong infrared band shifts and broadens with increasing implantation fluence. The mechanism for the shift and broadening of the infrared band is discussed. After laser irradiation, it is found that the implantation fluence has great effect on the laser-induced damage threshold, which decreases significantly from 5.43 J/cm2 to 4.62, 3.71, 2.64, and 1.80 J/cm2 with increasing implantation fluence. A mechanism for the degradation of laser damage resistance is presented.

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40

Baccus, Bruno, and Eric Vandenbossche. "Transient Diffusion Phenomena due to Ion Implantation Damage." Defect and Diffusion Forum 115-116 (January 1994): 53–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.115-116.53.

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41

Camassel, Jean, Huiyao Wang, Julien Pernot, Phillippe Godignon, Narcis Mestres, and Jordi Pascual. "Infrared Investigation of Implantation Damage in 6H-SiC." Materials Science Forum 389-393 (April 2002): 859–62. http://dx.doi.org/10.4028/www.scientific.net/msf.389-393.859.

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42

Simpson, P. J., U. G. Akano, P. J. Schultz, and I. V. Mitchell. "Annealing of Silicon Implantation Damage in Indium Phosphide." Materials Science Forum 105-110 (January 1992): 1435–38. http://dx.doi.org/10.4028/www.scientific.net/msf.105-110.1435.

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43

Kang, H. J., R. Shimizu, T. Saito, and H. Yamakawa. "Computer simulation of damage processes during ion implantation." Journal of Applied Physics 62, no. 7 (October 1987): 2733–37. http://dx.doi.org/10.1063/1.339400.

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44

Friedland, E., H. Le Roux, and J. B. Malherbe. "Deep radiation damage in copper after ion implantation." Radiation Effects 87, no. 6 (January 1985): 281–92. http://dx.doi.org/10.1080/01422448608209733.

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45

Lu, Fei, Hui Hu, Feng Chen, Xue-lin Wang, and Ke-Ming Wang. "Damage profiles in LiNbO3by low-energy H+implantation." Radiation Effects and Defects in Solids 159, no. 5 (May 2004): 309–14. http://dx.doi.org/10.1080/10420150410001670279.

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46

Tan, H. H., J. S. Williams, J. Zou, D. J. H. Cockayne, S. J. Pearton, and R. A. Stall. "Damage to epitaxial GaN layers by silicon implantation." Applied Physics Letters 69, no. 16 (October 14, 1996): 2364–66. http://dx.doi.org/10.1063/1.117526.

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47

Duckert, L. G., and Josef M. Miller. "Mechanisms of Electrically Induced Damage after Cochlear Implantation." Annals of Otology, Rhinology & Laryngology 95, no. 2 (March 1986): 185–89. http://dx.doi.org/10.1177/000348948609500216.

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48

Hara, Tohru, Takeshi Muraki, Satoru Takeda, Naotaka Uchitomi, Yoshiaki Kitaura, and Guang-bo Gao. "Damage Formed by $\bf Si^{+}$ Implantation in GaAs." Japanese Journal of Applied Physics 33, Part 2, No. 10B (October 15, 1994): L1435—L1437. http://dx.doi.org/10.1143/jjap.33.l1435.

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49

Hayama, S., G. Davies, and K. M. Itoh. "Photoluminescence studies of implantation damage centers in Si30." Journal of Applied Physics 96, no. 3 (August 2004): 1754–56. http://dx.doi.org/10.1063/1.1767965.

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50

Herre, O., E. Wendler, N. Achtziger, T. Licht, U. Reislöhner, M. Rüb, T. Bachmann, W. Wesch, P. I. Gaiduk, and F. F. Komarov. "Damage production in GaAs during MeV ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 120, no. 1-4 (December 1996): 230–35. http://dx.doi.org/10.1016/s0168-583x(96)00515-0.

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