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Добірка наукової літератури з теми "Impedance amplifier"

Автор: Grafiati
Опубліковано: 30 травня 2022
Оновлено: 31 травня 2022

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Статті в журналах з теми "Impedance amplifier"

1

Hu, Pengfei, Li Shen, Feng Han, Fei Yang, Maojiang Song, Li Zhang, and Liping Liu. "Development of the data acquisition system for terahertz spectrometer." Transactions of the Institute of Measurement and Control 40, no. 3 (April 6, 2017): 805–11. http://dx.doi.org/10.1177/0142331217690475.

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In most Terahertz time-domain spectrometer (THz-TDS) experiments, the lock-in amplifier works with trans-impedance pre-amplifier to amplitude the terahertz pulse accepted from detector. This paper discusses the development of data acquisition system for the transmission THz-TDS. In this system, the cross-correlation software algorithm in SR830 lock-in amplifier from Stanford Research Systems, that is usually used in THz-TDS, has been replaced by parallel hardware algorithm of Field Programmable Gate Array (FPGA) chip with the parallel processing ability. This chip has a faster processing speed and higher accuracy than others. A 24 bit Delta-Sigma Analog Digital (AD) was used in place of the 16 bit successive approximation ADC of SR830. The new AD convertor can reduce the complexity of trans-impedance pre-amplifier circuit and replace the SR555 current amplifiers that designed to work with SRS lock-in amplifiers. Besides trans-impedance pre-amplifier circuit, all function circuits, such as low-pass digital filter, phase-locked loop, Direct Digital Synthesis (DDS) reference source and the core algorithms, are integrated in a FPGA chip, which make the new designed lock-in amplifier with a small volume reduce a dozen times SR830 size.
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2

ABRAMOVITZ, ALEXANDER. "SEVERAL ALTERNATIVE DERIVATIONS OF BLACKMAN'S IMPEDANCE RELATION." Journal of Circuits, Systems and Computers 18, no. 05 (August 2009): 909–21. http://dx.doi.org/10.1142/s0218126609005435.

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The Blackman's impedance relation formula holds several unique and important features. First and most important is generality. The formula is truly universal and could be applied regardless of feedback topology. The impedances of canonical cases could be presented as special cases of Blackman's impedance relation. This paper revisits the concepts of Blackman's impedance relation. Several alternative derivation approaches are suggested to stand in accord with the gain evaluation procedure. The derivation of the Blackman's impedance relation formula by Superposition, Thevenin, Trans-Admittance and Trans-Impedance methods are offered. The paper extends the ideas and completes the methodology of unified approach to analysis of feedback amplifiers presented earlier. The paper also discusses some additional features of the feedback amplifier model. The paper advocates that the described method of obtaining the loop-gain makes a real difference in application of the formula. Overcoming the loop-gain computational difficulties helps reestablish the Blackman's impedance relation as a viable tool in analysis of feedback circuits.
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3

Fuada, Syifaul, and Trio Adono. "Noise and Bandwidth in Operational Amplifiers for Conventional TIAs used in Visible Light Communication." International Journal of Recent Contributions from Engineering, Science & IT (iJES) 6, no. 2 (August 29, 2018): 37. http://dx.doi.org/10.3991/ijes.v6i2.8171.

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Trans-impedance amplifiers play an essential role in the physical layer of visible light communication systems. They are applied in the first stage of a visible light communication receiver. This short paper is a follow-up from a previous study about the bandwidth and noise of Op-Amp based trans-impedance amplifier as used in visible light communication systems through two approaches: calculation and simulation. The results of both calculation and simulation are then compared through several scenarios. In this study, the <em>Orozco </em>approach is used as a fundamental reference in calculating the trans-impedance amplifier’s bandwidth and noise. Whereas for simulation, we used TINATM-SPICE®.
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4

Barthélemy, H. "Impedance projection based transconductance amplifier." Electronics Letters 39, no. 14 (2003): 1027. http://dx.doi.org/10.1049/el:20030697.

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5

Jeong, Jinho, Yeongmin Jang, Jongyoun Kim, Sosu Kim, and Wansik Kim. "Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines." Applied Sciences 11, no. 19 (September 28, 2021): 9017. http://dx.doi.org/10.3390/app11199017.

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In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.
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6

Shi, Weimin, and Songbai He. "Design of a Tri-Band Doherty Amplifier Based on Generalized Impedance Inverter." Journal of Circuits, Systems and Computers 28, no. 10 (September 2019): 1950170. http://dx.doi.org/10.1142/s0218126619501706.

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This paper introduces a methodology for implementing multi-band Doherty power amplifiers. Traditionally, a 90∘ impedance inverter line is required in Doherty architecture. In this contribution, a generalized impedance inverter line is utilized to construct multi-band Doherty power amplifiers. A tri-band Doherty power amplifier operating at 1.15, 1.85 and 2.55[Formula: see text]GHz is designed to validate the proposed method. Measurement results show the fabricated Doherty power amplifier achieves 6[Formula: see text]dB output back-off drain efficiencies of 62.3%, 49.3% and 50.5% at 1.15, 1.85 and 2.55[Formula: see text]GHz, respectively. The peaking output power of the fabricated tri-band Doherty power amplifier is 43.2, 43.7 and 43.8[Formula: see text]dBm with drain efficiencies of 64.5%, 62.2% and 64.5% at three working frequency points, respectively. Furthermore, when the designed Doherty power amplifier is driven by a 20[Formula: see text]MHz wideband LTE signal with peak-to-average-power ratio of 6.4[Formula: see text]dB, adjacent channel power ratios of [Formula: see text]29.4 and [Formula: see text]57.1[Formula: see text]dBc are achieved before and after digital pre-distortion at 1.85[Formula: see text]GHz.
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7

Abdulkhaleq, Ahmed M., Maan A. Yahya, Neil McEwan, Ashwain Rayit, Raed A. Abd-Alhameed, Naser Ojaroudi Parchin, Yasir I. A. Al-Yasir, and James Noras. "Recent Developments of Dual-Band Doherty Power Amplifiers for Upcoming Mobile Communications Systems." Electronics 8, no. 6 (June 6, 2019): 638. http://dx.doi.org/10.3390/electronics8060638.

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Power amplifiers in modern and future communications should be able to handle different modulation standards at different frequency bands, and in addition, to be compatible with the previous generations. This paper reviews the recent design techniques that have been used to operate dual-band amplifiers and in particular the Doherty amplifiers. Special attention is focused on the design methodologies used for power splitters, phase compensation networks, impedance inverter networks and impedance transformer networks of such power amplifier. The most important materials of the dual-band Doherty amplifier are highlighted and surveyed. The main problems and challenges covering dual-band design concepts are presented and discussed. In addition, improvement techniques to enhance such operations are also exploited. The study shows that the transistor parasitic has a great impact in the design of a dual-band amplifier, and reduction of the transforming ratio of the inverter simplifies the dual-band design. The offset line can be functionally replaced by a Π-network in dual-band design rather than T-network.
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8

Richelli, Anna, Luigi Colalongo, and Zsolt Kovacs-Vajna. "EMI Susceptibility of the Output Pin in CMOS Amplifiers." Electronics 9, no. 2 (February 9, 2020): 304. http://dx.doi.org/10.3390/electronics9020304.

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Анотація:
Measurements in commercial devices demonstrate a considerable susceptibility of the operational amplifiers to the electromagnetic interferences coupled to their output pin. This paper investigates some basic architectures starting from single stage amplifiers up to a whole operational amplifier. The result is a correlation between the different amplifier configurations, the output impedance and the susceptibility to the interferences. The simulations are perfomed by using the standard CMOS UMC 180nm technology and by running the netlist of the schematics extracted from the layout.
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9

Xia, J. S., and J. C. Rogers. "A high output impedance recording amplifier." IEEE Transactions on Consumer Electronics 37, no. 4 (1991): 897–904. http://dx.doi.org/10.1109/30.106956.

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10

Volkers, Henrik, and Thomas Bruns. "The influence of source impedance on charge amplifiers." ACTA IMEKO 2, no. 2 (January 15, 2014): 56. http://dx.doi.org/10.21014/acta_imeko.v2i2.81.

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Анотація:
This contribution discusses the influence of the source impedance on the complex sensitivity of a charge amplifier (CA). During calibration of a CA with varying source impedances deviations at higher frequencies were observed, which if not properly taken into account may generate systematic errors beyond the limits of the measurement uncertainty budget. The contribution discusses a model to describe the effect as well as an extension to established CA calibration procedures which allow to quantify and correct the effect.
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Дисертації з теми "Impedance amplifier"

1

Cheong, Heng Wan. "Generalized impedance converter (GIC) filter utilizing composite amplifier." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2005. http://library.nps.navy.mil/uhtbin/hyperion/05Sep%5FCheong.pdf.

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2

Kauffman, John Gabriel. "Design of a High Impedance Preamplifier for Coil Arrays." Link to electronic thesis, 2005. http://www.wpi.edu/Pubs/ETD/Available/etd-050205-141036/.

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3

Bani-Khaled, Ghazi, D. Snizhko, K. Muzyka, and G. Xu. "Trans-impedance Ampli er for ECL Analyzer." Thesis, ISBC 2018, 2018. http://openarchive.nure.ua/handle/document/5790.

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Анотація:
Use of apparatus "Spark" with electrochemical station CHI 800C CH Instrument and pho- tomultiplier tube CR-105 by Hamamatsu Photonics is shown by over an electrochemilumi- nescent assay of the test solution.
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4

Sun, Yichuang. "Analysis and synthesis of impedance matching networks and transconductance amplifier filters." Thesis, University of York, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.297262.

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5

Denson, Stephen Charles. "Improving the Sensitivity and Resolution of Miniature Ion Mobility Spectrometers with a Capacitive Trans Impedance Amplifier." Diss., Tucson, Arizona : University of Arizona, 2005. http://etd.library.arizona.edu/etd/GetFileServlet?file=file:///data1/pdf/etd/azu%5Fetd%5F1314%5F1%5Fm.pdf&type=application/pdf.

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6

Acimovic, Igor. "Contributions to the Design of RF Power Amplifiers." Thesis, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/24406.

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In this thesis we introduce a two-way Doherty amplifier architecture with multiple feedbacks for digital predistortion based on impedance-inverting directional coupler (transcoupler). The tunable two-way Doherty amplifier with a tuned circulator-based impedance inverter is presented. Compact N-way Doherty architectures that subsume impedance inverter and offset line functionality into output matching networks are derived. Comprehensive N-way Doherty amplifier design and analysis techniques based on load-pull characterization of active devices and impedance modulation effects are developed. These techniques were then applied to the design of a two-way Doherty amplifier and a three-way Doherty amplifier which were manufactured and their performance measured and compared to the amplifier performance specifications and simulated results.
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7

Ramachandran, Narayan Prasad. "Design of a 3.3 V analog video line driver with controlled output impedance." [College Station, Tex. : Texas A&M University, 2003. http://hdl.handle.net/1969.1/106.

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Thesis (M.S.)--Texas A&M University, 2003.
"Major Subject: Electrical Engineering" Title from author supplied metadata (record created on Jul. 18, 2005.) Vita. Abstract. Includes bibliographical references.
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8

Refai, Wael Yahia. "A Linear RF Power Amplifier with High Efficiency for Wireless Handsets." Diss., Virginia Tech, 2014. http://hdl.handle.net/10919/25886.

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This research presents design techniques for a linear power amplifier with high efficiency in wireless handsets. The power amplifier operates with high efficiency at the saturated output power, maintains high linearity with enhanced efficiency at back-off power levels, and covers a broadband frequency response. The amplifier is thus able to operate in multiple modes (2G/2.5G/3G/4G). The design techniques provide contributions to current research in handset power amplifiers, especially to the converged power amplifier architecture, to reduce the number of power amplifiers within the handset while covering all standards and frequency bands around the globe. Three main areas of interest in power amplifier design are investigated: high power efficiency; high linearity; and broadband frequency response. Multiple techniques for improving the efficiency are investigated with the focus on maintaining linear operation. The research applies a new technique to the handset industry, class-J, to improve the power efficiency while avoiding the practical issues that hinder the typical techniques (class-AB and class-F). Class-J has been implemented using GaN FET in high power applications. To our knowledge, this work provides the first implementation of class-J using GaAs HBT in a handset power amplifier. The research investigates the linearity, and the nature and causes of nonlinearities. Multiple concepts for improving the linearity are presented, such as avoiding odd-degree harmonics, and linearizing the relationship between the output current and the input voltage of the amplifier at the fundamental frequency. The concept of bias depression in HBT transistors is introduced with a bias circuit that reduces the bias-offset effect to improve linearity at high output power. A design methodology is presented for broadband matching networks, including the component loss. The methodology offers a quick and accurate estimation of component values, giving more degrees of freedom to meet the design specifications. It enables a trade-off among high out-of-band attenuation, number/size of components, and power loss within the network. Although the main focus is handset power amplifiers, most of the developed techniques can be applied to a wide range of power amplifiers.
Ph. D.
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9

Malan, Pieter Jacob De Villiers. "Low impedance characterisation and modeling of high power LDMOS devices." Thesis, Stellenbosch : University of Stellenbosch, 2005. http://hdl.handle.net/10019.1/2510.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2005.
In RF power transistor characterisation, the designer is confronted with low impedance measurements (typically from 1 Ohm to 12 Ohm). These transistors are contained in metal-ceramic packages of which the lead widths vary with power capability. This thesis presents a high-quality fixture design with low impedance TRL calibration standards for characterisation of an LDMOS transistor. Pre-matching networks are used to transform to the low impedance environment. Since these pre-matching networks are independent of the termination impedance, the low impedance port can always be designed to comply with the same dimension as the device which is being measured.
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10

Bozanic, Mladen. "Design methods for integrated switching-mode power amplifiers." Thesis, University of Pretoria, 2011. http://hdl.handle.net/2263/26616.

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While a lot of time and resources have been placed into transceiver design, due to the pace of a conventional engineering design process, the design of a power amplifier is often completed using scattered resources; and not always in a methodological manner, and frequently even by an iterative trial and error process. In this thesis, a research question is posed which enables for the investigation of the possibility of streamlining the design flow for power amplifiers. After thorough theoretical investigation of existing power amplifier design methods and modelling, inductors inevitably used in power amplifier design were identified as a major drawback to efficient design, even when examples of inductors are packaged in design HIT-Kits. The main contribution of this research is engineering of an inductor design process, which in-effect contributes towards enhancing conventional power amplifiers. This inductance search algorithm finds the highest quality factor configuration of a single-layer square spiral inductor within certain tolerance using formulae for inductance and inductor parasitics of traditional single-π inductor model. Further contribution of this research is a set of algorithms for the complete design of switch-mode (Class-E and Class-F) power amplifiers and their output matching networks. These algorithms make use of classic deterministic design equations so that values of parasitic components can be calculated given input parameters, including required output power, centre frequency, supply voltage, and choice of class of operation. The hypothesis was satisfied for SiGe BiCMOS S35 process from Austriamicrosystems (AMS). Several metal-3 and thick-metal inductors were designed using the abovementioned algorithm and compared with experimental results provided by AMS. Correspondence was established between designed, experimental and EM simulation results, enabling qualification of inductors other than those with experimental results available from AMS by means of EM simulations with average relative errors of 3.7% for inductors and 21% for the Q factor at its peak frequency. For a wide range of inductors, Q-factors of 10 and more were readily experienced. Furthermore, simulations were performed for number of Class-E and Class-F amplifier configurations with HBTs with ft greater than 60 GHz and total emitter area of 96 μm² as driving transistors to complete the hypothesis testing. For the complete PA system design (including inductors), simulations showed that switch-mode power amplifiers for 50 Ω load at 2.4 GHz centre frequency can be designed using the streamlined method of this research for the output power of about 6 dB less than aimed. This power loss was expected, since it can be attributed to non-ideal properties of the driving transistor and Q-factor limitations of the integrated inductors, assumptions which the computations of the routine were based on. Although these results were obtained for a single micro-process, it was further speculated that outcome of this research has a general contribution, since streamlined method can be used with a much wider range of CMOS and BiCMOS processes, when low-gigahertz operating power amplifiers are needed. This theory was confirmed by means of simulation and fabrication in 180 nm BiCMOS process from IBM, results of which were also presented. The work presented here, was combined with algorithms for SPICE netlist extraction and the spiral inductor layout extraction (CIF and GDSII formats). This secondary research outcome further contributed to the completeness of the design flow. All the above features showed that the routine developed here is substantially better than cut-and-try methods for design of power amplifiers found in the existing body of knowledge.
Thesis (PhD(Eng))--University of Pretoria, 2011.
Electrical, Electronic and Computer Engineering
unrestricted
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Книги з теми "Impedance amplifier"

1

Toh, Kai-Yap. Wide-band, low-noise, matched impedance amplifiers in submicron MOS technology. Berkeley: University of California, Berkeley, 1986.

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2

The design of impedance-matching networks for radio-frequency and microwave amplifiers. Dedham, MA: Artech House, 1985.

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3

Yarman, Binboga Siddik. Design of ultra wideband power transfer networks. Chichester, West Sussex, U.K: Wiley, 2010.

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4

Yarman, Binboga Siddik. Design of ultra wideband power transfer networks. Chichester, West Sussex, U.K: Wiley, 2010.

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5

Wright, A. G. Electronics for PMTs. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780199565092.003.0014.

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Photomultipliers (PMTs) are current generators characterized by high gain, wide bandwidth, and high-output impedance. The role of preamplifiers and amplifiers is generally one of conditioning the PMT output. Either the time signature is preserved using a fast voltage preamplifier, or a voltage proportional to the charge in each event is generated with a charge-sensitive preamplifier. Both preamplifier types are generally of low-output impedance, suitable for driving matched coaxial cable. Preamplifiers and amplifiers are available as modular units (e.g. nuclear instrument module), stand alone, or are incorporated in a module including the PMT. Shaping amplifiers are used to further condition preamplifier signals, using integrating and differentiating circuits—particularly relevant to scintillation spectrometers. Discrete-component amplifiers and current-feedback operational amplifiers serve fast applications. Digital signal processing has overtaken many of the classical electronic techniques involving resolution and in pulse shape discrimination. Electronic circuitry for generating fast LED pulses is discussed.
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6

Chen, Wai-Kai. Broadband Matching: Theory and Implementations. World Scientific Publishing Co Pte Ltd, 2015.

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7

Yarman, Binboga Siddik. Design of Ultra Wideband Power Transfer Networks. Wiley & Sons, Incorporated, John, 2010.

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Частини книг з теми "Impedance amplifier"

1

Sherstneva, A. "Impedance Matching with LC Networks for Two-Stage Microwave Transistor Amplifier." In SMART Automatics and Energy, 563–71. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-8759-4_58.

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2

Bian, Chengxi, Weiqing Dong, Wa Kong, and Jing Xia. "Adaptive Particle Swarm Optimization for Harmonic Impedance Matching in 5G Power Amplifier Design." In Wireless and Satellite Systems, 369–78. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-69069-4_31.

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3

Dal Fabbro, Paulo Augusto, and Maher Kayal. "Appendix B: Procedure for Impedance Matching of Printed-Circuit RF Amplifiers." In Linear CMOS RF Power Amplifiers for Wireless Applications, 137–56. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9361-5_10.

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4

"Impedance Matching Networks." In Introduction to RF Power Amplifier Design and Simulation, 261–306. CRC Press, 2015. http://dx.doi.org/10.1201/b18677-6.

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5

Eroglu, Abdullah. "Impedance Matching Networks." In Introduction to RF Power Amplifier Design and Simulation, 261–305. CRC Press, 2018. http://dx.doi.org/10.1201/9781315215297-5.

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6

"THE INDEFINITE-IMPEDANCE MATRIX FORMULATION OF FEEDBACK AMPLIFIER THEORY." In Active Network Analysis, 800–850. WORLD SCIENTIFIC, 2016. http://dx.doi.org/10.1142/9789814675895_0011.

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7

"The operational transconductance amplifier based gyrators and impedance simulators." In Gyrators, Simulated Inductors and Related Immittances: Realizations and applications, 99–145. Institution of Engineering and Technology, 2020. http://dx.doi.org/10.1049/pbcs048e_ch3.

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8

"Wideband Power Amplifier with Auto-Transformer Based Output Impedance Transformation Network." In Sensors, Circuits and Instrumentation Systems, 57–76. De Gruyter, 2019. http://dx.doi.org/10.1515/9783110592566-004.

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Munson, Jon. "High voltage CMOS amplifier enables high impedance sensing with a single IC." In Analog Circuit Design, 891–92. Elsevier, 2015. http://dx.doi.org/10.1016/b978-0-12-800001-4.00414-2.

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10

Joel Nounga Njanda, Ange, and Paul Samuel Mandeng. "Co-Design Block PA (Power Amplifier)-Antenna for 5G Application at 28 GHz Frequency Band." In Antenna Systems [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98653.

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This subject addresses the issue related to Transmitters for the new communication standard, namely 5G. Indeed to respond to the problems of radio coverage, the speed of services as well as the rise in user demand, transmitters must have ideal characteristics to be able to meet these requirements. This chapter proposes in order to answer such a problem a block made up of a linear array of antennas has 4 elements and a transistor amplifier operating at the 28 GHz frequency band. The Design of the Block is done first by the design of the antenna then the design of the amplifier and finally the junction of the two devices with a matching network to therefore form the block of transmitters Speaking of the design of the antenna, the prepared antenna is a patch antenna with a patch shape excluding the classic shapes which is printed on a Rogers-Duriod 5880 substrate so the thickness is 0.127 mm, the linear antenna array proposed has a gain greater than 15 dB and a Good Bandwidth, the transistor amplifier is in turn printed on the same substrate has the same thickness to minimize the losses during the junction of this one with the antenna, this amplifier offers a higher gain than device 15 dB and therefore the Bandwidth is greater than 2 GHz, each transmitter has an input and output reflection coefficient of less than −10 db. The simulation of each transmitter is made with the CST-microwave software for the Antenna and the ADS (Advanced Design System) software for the amplifier and the Block PA-Antenna. It is important to note that the Block output impedance is 50 ohms making our device more practical and easily commercial.
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Тези доповідей конференцій з теми "Impedance amplifier"

1

Hadady, Hanieh, Kelsey A. Michael, and Emil J. Geiger. "Impedance Effects During High-Frequency Dielectrophoresis." In ASME 2014 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/imece2014-38435.

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Dielectrophoresis refers to the motion of electrically neutral particles in a spatially non-uniform electric field as a function of frequency. Analytical models predict a second or upper crossover frequency, but there is little experimental evidence to supporting this prediction. One reason for this is that standard bench top function generators are typically limited to maximum frequency of 20 MHz, and those with higher bandwidths are often unable to generate higher frequency electric fields with sufficient amplitude to induce DEP motion. Our experimental set-up seeks to sort cells on the basis of the upper crossover frequency in the range of 10–160 MHz. At these frequencies, the DEP response is expected to depend primarily on the dielectric properties of the cytoplasm. A needle pattern was used due to the ease of making spatially non-uniform electric fields. Sine waves were generated with a signal generator capable of generating sine waves with frequencies up to 160 MHz which was amplified with an RF amplifier. In order to help match the load to the amplifier and reduce the amount of reflected power an attenuator was placed between the amplifier and the electrodes. Two different amplifiers and attenuators were tested. Conductive copper tape and alligator clips were used to connect the glass slide to the electronic equipment. These systems were capable of 30 Volts peak-to-peak (Vpp) amplitudes in the given frequency range as monitored by an oscilloscope probing the electrodes. With this set-up, the amplitude of the signal was observed by oscilloscope to vary as much as 40 Vpp across the range of frequencies which is supplied by signal generator. We suspect that the impedance of the experimental set-up was highly frequency dependent at the high frequencies used in this study. Furthermore, the oscilloscope may also be enough of a load on the system to affect the impedance. To maintain the 30 Vpp output, the input amplitude to the RF amplifier was adjusted at each individual frequency across all frequencies of the DEP experiment.
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de Medeiros, Yan, Robson Nunes de Lima, and Fernando Rangel de Sousa. "RF amplifier with automatic impedance matching system." In 2011 IEEE Second Latin American Symposium on Circuits and Systems (LASCAS). IEEE, 2011. http://dx.doi.org/10.1109/lascas.2011.5750305.

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Kaltiokallio, Mikko, Aarno Parssinen, and Jussi Ryynanen. "Wideband trans-impedance filter low noise amplifier." In 2010 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2010). IEEE, 2010. http://dx.doi.org/10.1109/rfic.2010.5477375.

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4

Assambo, C., and M. J. Burke. "Amplifier input impedance in dry electrode ECG recording." In 2009 Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE, 2009. http://dx.doi.org/10.1109/iembs.2009.5333398.

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5

Liu, Jialin, Xu Zhang, Bin Li, Ming Liu, and Hongda Chen. "A compact neural amplifier with high input impedance." In 2015 IEEE Advanced Information Technology, Electronic and Automation Control Conference (IAEAC). IEEE, 2015. http://dx.doi.org/10.1109/iaeac.2015.7428554.

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6

Wu, R., F. J. Lidgey, K. Hayatleh, and B. L. Hart. "Design of Differential Amplifier with Negative Impedance Compensation." In 2008 4th IEEE International Conference on Circuits and Systems for Communications (ICCSC 2008). IEEE, 2008. http://dx.doi.org/10.1109/iccsc.2008.131.

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7

Rummens, Francois, Sylvie Renaud, and Noelle Lewis. "CMOS differential neural amplifier with high input impedance." In 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS). IEEE, 2015. http://dx.doi.org/10.1109/newcas.2015.7182037.

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Donahue, Devon, and Taylor Barton. "A 2-GHz Sampled Line Impedance Sensor for Power Amplifier Applications with Varying Load Impedance." In 2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR). IEEE, 2019. http://dx.doi.org/10.1109/pawr.2019.8708724.

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Yamanaka, Shoji, Kenichi Matsumoto, and Yasushi Horii. "Theoretical study on operational-amplifier-based negative impedance converters with symmetrically allocated impedance elements." In 2015 Asia-Pacific Microwave Conference (APMC). IEEE, 2015. http://dx.doi.org/10.1109/apmc.2015.7413465.

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10

Ledezma, Luis M. "Doherty power amplifier with lumped non-foster impedance inverter." In 2015 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS). IEEE, 2015. http://dx.doi.org/10.1109/wmcas.2015.7233210.

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Звіти організацій з теми "Impedance amplifier"

1

Murphy, Brianna, and Roger Kaul. High-impedance Buffer Amplifier For Micro-electromechanical System (MEMS) Resonator Measurements. Fort Belvoir, VA: Defense Technical Information Center, September 2010. http://dx.doi.org/10.21236/ada531283.

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