Дисертації з теми "III-V compound semiconductor nanostructures"
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Grant, Victoria Anne. "Growth and characterisation of III-V semiconductor nanostructures." Thesis, University of Nottingham, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490983.
Повний текст джерелаGomes, Rajiv. "Compound III-V semiconductor avalanche photodiodes for X-ray spectroscopy." Thesis, University of Sheffield, 2012. http://etheses.whiterose.ac.uk/2560/.
Повний текст джерелаTey, Chun Maw. "Advanced transmission electron microscopy studies of III-V semiconductor nanostructures." Thesis, University of Sheffield, 2006. http://etheses.whiterose.ac.uk/14901/.
Повний текст джерелаGryczynski, Karol Grzegorz. "Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures." Thesis, University of North Texas, 2012. https://digital.library.unt.edu/ark:/67531/metadc115090/.
Повний текст джерелаLu, Ryan P. "III-V compound semiconductor dopant profiling using scanning spreading resistance microscopy /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3055790.
Повний текст джерелаMashigo, Donald. "Raman spectroscopy of ternary III-V semiconducting films." Thesis, Nelson Mandela Metropolitan University, 2009. http://hdl.handle.net/10948/1011.
Повний текст джерелаJia, Roger (Roger Qingfeng). "Properties of thin film III-V/IV semiconductor alloys and nanostructures." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/113928.
Повний текст джерелаThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 116-121).
A large amount of research and development has been devoted to engineering materials for the next generation of semiconductor devices with high performance, energy efficiency, and economic viability. To this end, significant efforts have been made to grow semiconductor thin films with the desired properties onto lattice constants with viable, cost effective substrates. Comparatively less effort has been made to explore III-V/IV heterovalent nanostructures and alloys, which may exhibit properties not available in existing materials. The investigation of these structures, grown using MOCVD, is the goal of this thesis and is motivated by two factors: one, that III-V/IV nanostructures should be good thermoelectrics based on the "phonon glass electron crystal" concept, and two, that (GaAs)₁-x(Ge₂)x alloys were observed to exhibit near-infrared room temperature luminescence, a result that can have significant implications for low bandgap optical devices. A survey of various growth conditions was conducted for the growth of the model GaAs/Ge system using MOCVD to gain insight in the epitaxy involving heterovalent materials and to identify structures suitable for investigation for their thermoelectric and optical properties. A significant decrease in the thermal conductivities of GaAs/Ge nanostructures and alloys relative to bulk GaAs and bulk Ge was observed. This reduction can be attributed to the presence of the heterovalent interfaces. The electron mobilities of the structures were determined to be comparable to bulk Ge, indicating minimal disruption to electron transport by the interfaces. A further reduction in thermal conductivity was observed in an (In₀.₁Ga₀.₉As)₀.₈₄(Si0₀.₁Ge₀.₉)₀.₁₆ alloy; the alloy had a thermal conductivity of 4.3 W/m-K, comparable to some state-of-the-art thermoelectric materials. Room temperature photoluminescence measurements of various compositions of (GaAs)₁-x(Ge₂)x alloys revealed a maximum energy transition of 0.8 eV. This bandgap narrowing is the result of composition fluctuations; the fluctuations create regions of lower bandgap, resulting in a weak dependence on luminescence as a function of Ge composition as well as lower bandgap than the homogeneous alloy with the same composition. As silicon was added to the (GaAs)₁-x(Ge₂)x alloy, the bandgap increased despite the composition fluctuations. Based on the results from this work III-V/IV nanostructures show promise for thermoelectric and optical applications.
by Roger Jia.
Ph. D.
McAdoo, James Alexander. "Factors affecting carrier transport in ultrafast III-V compound semiconductor based photodiodes." W&M ScholarWorks, 2000. https://scholarworks.wm.edu/etd/1539623974.
Повний текст джерелаThota, Venkata Ramana Kumar. "Tunable Optical Phenomena and Carrier Recombination Dynamics in III-V Semiconductor Nanostructures." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1451807323.
Повний текст джерелаLee, Kyeongkyun. "Modeling and optimization of molecular beam epitaxy for III-V compound semiconductor growth." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/14836.
Повний текст джерелаWilliams, Howard R. "Compound semiconductor material manufacture, process improvement." Thesis, University of South Wales, 2002. https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html.
Повний текст джерелаNorman, A. G. "TEM/TED studies of epitaxial layers of ternary and quaternary III-V compound semiconductor alloys." Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233511.
Повний текст джерелаCheng, Cheng-Wei Ph D. Massachusetts Institute of Technology. "In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/59216.
Повний текст джерелаIncludes bibliographical references (p. 164-168).
In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first selected to be in situ deposited on GaAs surface by using trimethlyaluminum(TMA) and dimethylhydrazine (DMHy). However, the frequency dispersion of Capacitance-Voltage (C-V) curves for in situ AIN/GaAs samples are always large because of the existence of high interfacial defect state density (Dit) due to the nitridization of the GaAs surface during the AIN deposition. In order to avoid the surface reaction, in situ ALD of aluminum oxide (A1₂O₃) on GaAs in MOCVD system was proposed. Isopropanol (IPA) was chosen as the oxygen source for A1₂O₃ ALD and the mechanism was investigated. Pure A120 3 thin film was obtained and no arsenic or gallium oxide was observed at the interface. Both frequency dispersion of C-V curve and the Di, of oxide/p-GaAs interface are low for this process. In situ CVD A1₂O₃ on GaAs was also performed. Gallium oxide (Ga₂O₃) was observed at the interface. The Ga₂O₃ was enriched in the A1₂O₃ above the interface during the deposition process and a possible mechanism was proposed. This layer reduces the frequency dispersion of the C-V characteristics and lowers the Dit of n-type GaAs sample. After the in situ method had been successfully established, ex situ experiments was also performed to compare the results with in situ process in the same MOCVD system. Annealing native oxide covered GaAs samples in Arsine (AsH 3) prior to ALD A1₂O₃ results in C-V characteristics of the treated samples that resemble the superior C-V characteristics of p-type GaAs. Besides, both TMA and IPA show self-cleaning effect on removing the native oxide in ex situ process. The discrepancy in the C-V characteristics was observed in in situ p- and n-type GaAs samples. Finally, the entire Dit energy distributions of interfaces from different processes were determined by conductance frequency method with temperature-variation C-V measurement. The existence of Ga₂O₃ at interface was found to be the possible source to lower the density of mid-gap defect state. From the C-V simulation, the mid-gap defect states are acceptor-like (Gallium Vacancies) and the source to cause high frequency dispersion of the C-V curves for n-type substrate. The relation between the interfacial defect state distribution and the processes was correlated.
by Cheng-Wei Cheng.
Ph.D.
Hetherington, Dale Laird. "III-V compound semiconductor integrated charge storage structures for dynamic and non-volatile memory elements." Diss., The University of Arizona, 1992. http://hdl.handle.net/10150/186112.
Повний текст джерелаAl, Zoubi Tariq [Verfasser]. "Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates / Tariq Al Zoubi." Kassel : Universitätsbibliothek Kassel, 2013. http://d-nb.info/1043814876/34.
Повний текст джерелаGonzalez, Maria. "Electronic Defects of III-V Compound Semiconductor Materials Grown on Metamorphic SiGe Substrates for Photovoltaic Applications." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250703650.
Повний текст джерелаRobert, Cédric. "Study of III-V nanostructures on GaP for lasing emission on Si." Thesis, Rennes, INSA, 2013. http://www.theses.fr/2013ISAR1913/document.
Повний текст джерелаThis PhD work focuses on the study of III-V semiconductor nanostructures for the development of laser on Si substrate in a pseudomorphic approach. GaP-based alloys and more specifically dilute nitride GaPN-based alloys are expected to guarantee a low density of crystalline defects through a perfect lattice-matched growth. An extended tight-binding model is first presented to deal with the theoretical challenges for the simulation of electronic and optical properties of semiconductor structures grown on GaP or Si substrate. The optical properties of bulk GaPN and GaAsPN alloys are then studied through temperature dependent continuous wave photoluminescence and time-resolved photoluminescence experiments. The potential of GaAsPN/GaP quantum wells as a laser active zone is discussed in the framework of both theoretical simulations (with the tight-binding model) and experimental studies (with temperature dependent and time-resolved photoluminescence). In particular, the N-induced disorder effects are highlighted. The AlGaP alloy is then proposed as a candidate for the cladding layers. A significant refractive index contrast between AlGaP and GaP is measured by spectroscopic ellipsometry which may lead to a good confinement of the optical mode in a laser structure. The issue of band alignment is highlighted. Solutions based on the quaternary GaAsPN alloy are proposed. Finally, the InGaAs/GaP quantum dots are studied as an alternative to GaAsPN/GaP quantum wells for the active zone. The growth of a high quantum dot density and room temperature photoluminescence are achieved. The electronic band structure is studied by time-resolved photoluminescence and pressure dependent photoluminescence as well as tight-binding and k.p simulations. It demonstrates that the ground optical transition involves mainly X-conduction states
Sieg, Robert M. "Critical issues in III-V compound semiconductor epitaxy on group IV (Si,Ge) substrates for optoelectronic applications /." The Ohio State University, 1998. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487953567771998.
Повний текст джерелаLidsky, David. "Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor." Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/52591.
Повний текст джерелаMaster of Science
Wipatawit, Praphaphan. "Studies of magnetoresistance and Hall sensors in semiconductors." Thesis, University of Oxford, 2006. http://ora.ox.ac.uk/objects/uuid:58faf6f4-debb-4695-8909-fca7cbf310a2.
Повний текст джерелаBlot, Xavier. "Réalisation, caractérisation et modélisation de collages de matériaux III-V pour cellules photovoltaïques à concentration." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT108/document.
Повний текст джерелаThe solar photovoltaic is a promising way to support our economical growth while it can reduce the environmental impact of our society. But, to be truly competitive, the sector has to develop more efficient solar cells. An interesting option aims at combining different materials either by epitaxy growth and direct bonding. The Ph.D. was funded by the SOITEC company with the goal to develop the bonding of the gallium arsenide (GaAs) on the indium phosphide (InP) for the SmartCell architecture. We had to optimize its electrical behavior with a numerical model taking into account the bonding interface state. We introduce the study with a wide range of I(V) tools to precisely characterize the bonding interface. Depending on the case, we detail suitable metal contacts to improve the test. A study in deep of the GaAs/InP heterostructure and the GaAs/GaAs and the InP/InP homostructures leads to a better understanding of the bonding mechanisms. After a thermal annealing, the hydrophilic bonding process generates oxyde compounds at the interface which are absorbed in the InP case and are fragmented in the GaAs case. For given parameters, our stacks are electrically and mechanically better than the state of the art. Then we propose innovative processes to control the interface oxyde and thus optimize the heterostructure. Among them, we validate a new approach with ozone exposure that selectively generates an oxyde prior to bonding. The interface resistance of the stack is therefore closed to our best results and has great potentials. To conclude, the study focuses on a novel numerical model connecting the bonding process, the interface state and the electrical behavior. For a given annealing, the interface is heterogenous with reconstructed areas (thermionic conduction) and oxyde areas (tunnel conduction). These regions are preferentially activated as a function of the operating temperature. They are weighted by a criteria determining the level of the bonding reconstruction which will be useful for the future developments of the application
Briere, Gauthier. "Réalisation de méta-optiques à base de matériaux semi-conducteurs III-V pour des applications dans le visible." Thesis, Université Côte d'Azur (ComUE), 2019. http://www.theses.fr/2019AZUR4075.
Повний текст джерелаIn the past years, new optical components have appeared. These components, known as "meta-optics" or "metasurfaces", made it possible to control and to shape the wavefront of the light. This allows the control of any incident beam and the creation of conventional optical functionalities, such as focusing or deflecting the light, or functionalities with additional features such as the possibility of creating polarization-dependent meta-holograms. Indeed, thanks to the periodic arrangement of resonators with sub-wavelength geometric dimensions, it is possible to obtain an arbitrary local control of the incident beam. Nevertheless, even though many applications have been demonstrated in the community, only a few materials are found to be compatible for the industrial development of these components. In addition, in order to pass from passive to active components for the fabrication of dynamic devices, it is necessary to switch from dielectric materials to semiconductor materials. For these reasons, we are interested in the use of a semiconductor material, Gallium Nitride, for the development of metasurface components. We first present a numerical study of the nanostructures used during this work. Then, we show how the design of our meta-optics is done by presenting the numerical conception method and nanofabrication processes used, which includes a new etching technique compatible only with crystalline materials while preserving their optical properties. Finally, we suggest different applications where our components can be used, such as: the development of metalenses with high numerical aperture and large surface; the optimization of metasurface high contrast gratings allowing to reach diffraction efficiencies higher than 80%; or the fabrication of meta-holograms preserving the information of the orbital angular momentum of the incident beam
Wu, Xiaoyue. "Simulation Study of Epitaxially Regrown Vertical-Cavity Surface-Emitting Lasers." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-52896.
Повний текст джерелаGillardin, Gérard. "Mise au point d'un appareillage de photoluminescence a haute resolution spatiale : application a l'etude des semiconducteurs et dispositifs electroniques iii-v." Clermont-Ferrand 2, 1988. http://www.theses.fr/1988CLF2D216.
Повний текст джерелаWidmann, Frédéric. "Epitaxie par jets moléculaires de GaN, AlN, InN et leurs alliages : physique de la croissance et réalisation de nanostructures." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10234.
Повний текст джерелаRuterana, Pierre. "Structure des interfaces, etude par microscopie electronique en transmission, application : materiaux semiconduteurs iii-v et multicouches pour optiques dans le domaine des rayons x mous." Caen, 1987. http://www.theses.fr/1987CAEN2032.
Повний текст джерелаKarraï, Khaled. "Etude de propriétés magnéto-optiques des hétérostructures de semiconducteurs III-V par spectroscopie submillimétrique." Grenoble 1, 1987. http://www.theses.fr/1987GRE10127.
Повний текст джерелаShen, Jianyun. "Thermodynamique des systèmes III-V, As-Ga-In et Al-As et analyse de leur épitaxie par jets moléculaires." Grenoble INPG, 1989. http://www.theses.fr/1989INPG0087.
Повний текст джерелаMarzin, Jean-Yves. "Effets des deformations sur les proprietes optiques des super-reseaux contraints a base de semi-conducteurs iii-v." Paris 7, 1987. http://www.theses.fr/1987PA077132.
Повний текст джерелаErman, Marko. "L'éllipsométrie spectroscopique à haute résolution latérale : modélisation, application aux surfaces, interfaces et puits quantiques dans le matériaux semi-conducteur III-V." Paris 6, 1986. http://www.theses.fr/1986PA066400.
Повний текст джерелаBENDRAOUI, ABDELLATIF. "Traitements chimiques et thermiques de composes semi-conducteurs iii-v a base de in, ga, as, p en vue d'une reprise d'epitaxie." Clermont-Ferrand 2, 1989. http://www.theses.fr/1989CLF21151.
Повний текст джерелаMoroni, Didier. "Etude des proprietes optiques de semi-conducteurs composes iii-v et de puits quantiques par photoluminescence et excitation de la photoluminescence." Paris 6, 1987. http://www.theses.fr/1987PA066540.
Повний текст джерелаPerraud, Simon. "Etude de puits quantiques semiconducteurs par microscopie et spectroscopie à effet tunnel". Phd thesis, Université Pierre et Marie Curie - Paris VI, 2007. http://tel.archives-ouvertes.fr/tel-00606632.
Повний текст джерелаGourgon, Cécile. "Fabrication et caractérisation optique de fils et boites quantiques CdTe/CdZnTe." Université Joseph Fourier (Grenoble), 1995. http://www.theses.fr/1995GRE10145.
Повний текст джерелаRashid, S. M. Shahriar. "Design and Heterogeneous Integration of Single and Dual Band Pulse Modulated Class E RF Power Amplifiers." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1543505207173487.
Повний текст джерелаBouchikhi, Benachir. "Propriétés physiques des structures métal/isolant/semiconducteur réalisées sur INP(N) à l'aide d'un oxyde natif plasma." Nancy 1, 1988. http://www.theses.fr/1988NAN10085.
Повний текст джерелаCouturier, Laurent. "Conception et contrôle in-situ de l'élaboration de lasers à cavité verticale et à émission surfacique." Grenoble INPG, 1996. http://www.theses.fr/1996INPG0194.
Повний текст джерелаChristoforou, Georges. "Conception de préamplificateurs intégrés pour fonctionnement à basse température et sous rayonnement intense." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10031.
Повний текст джерелаWeil, Thierry. "Etude theorique du transport perpendiculaire aux couches dans les semiconducteurs 3-5 modules suivant une dimension." Paris 6, 1987. http://www.theses.fr/1987PA066099.
Повний текст джерелаPeng, Kun. "III-V Compound Semiconductor Nanowire Terahertz Detectors." Phd thesis, 2016. http://hdl.handle.net/1885/117040.
Повний текст джерелаNarangari, Parvathala. "III-V Semiconductor Nanostructures for Photoelectochemical Water Splitting." Phd thesis, 2019. http://hdl.handle.net/1885/160829.
Повний текст джерелаLi, ChyiShiun. "Radiation effects in III-V compound semiconductor heterostructure devices." Thesis, 2002. http://hdl.handle.net/1957/31095.
Повний текст джерелаGraduation date: 2003
HUANG, ZHEN-ZHI, and 黃禎治. "Study on III-V compound semiconductor heterojunction bipolar transistors." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/96710582306070924626.
Повний текст джерела"Interdigitated metal-semiconductor-metal (MSM) photodetector on III-V compound semiconductor materials." Chinese University of Hong Kong, 1995. http://library.cuhk.edu.hk/record=b5888464.
Повний текст джерелаThesis (M.Phil.)--Chinese University of Hong Kong, 1995.
Includes bibliographical references (leaves [124]-131).
Acknowledgements
Abstract
Chapter Chapter 1 --- Introduction --- p.1-1
Chapter Chapter 2 --- Basic Theory for MSM Photodetectors --- p.2-1
Chapter 2.1 --- Schottky-Mott Theory for Ideal metal-Semiconductor Contact --- p.2-1
Chapter 2.2 --- Modifications to Schottky-Mott Theory for Practical Metal Semiconductor Contact --- p.2-4
Chapter 2.3 --- Energy Band of Metal-semiconductor-metal (MSM) Structures --- p.2-6
Chapter 2.4 --- Dark Current Voltage Characteristics for MSM Structure --- p.2-12
Chapter 2.5 --- Capacitance for Interdigitated MSM Photodetectors --- p.2-16
Chapter 2.6 --- Basic mechanism of the MSM Photodetector --- p.2-19
Chapter 2.7 --- DC Responsity and Quantum Efficiency of the Interdigitated MSM Photodetector --- p.2-20
Chapter 2.8 --- Speed Performance of the Interdigitated MSM Photodetector --- p.2-21
Chapter Chapter 3 --- Device Fabrication and Packaging --- p.3-1
Chapter 3.1 --- Metallization Pattern --- p.3-1
Chapter 3.2 --- Device Fabrication --- p.3-7
Chapter 3.3 --- Device Packaging --- p.3-8
Chapter Chapter 4 --- Experimental Description --- p.4-1
Chapter 4.1 --- Experimental Procedures --- p.4-1
Chapter 4.2 --- Equipment Description --- p.4-3
Chapter Chapter 5 --- 1.3μm In0.53Ga0.47As Metal-Semiconductor-Metal Photodetector Grown by Low-Pressure MOCVD Using Tertiarybutylarsine --- p.5-1
Chapter 5.1 --- General Description --- p.5-1
Chapter 5.2 --- Structure of the Photodetector --- p.5-2
Chapter 5.3 --- Experimental Results --- p.5-6
Chapter 5.4 --- Data Analysis and Discussion --- p.5-14
Chapter 5.5 --- Summary --- p.5-24
Chapter Chapter 6 --- The Performance of 0.85μm Semi-Insulated GaAs MSM Photodetector with Different Interdigitated Spacings --- p.6-1
Chapter 6.1 --- General Description --- p.6-1
Chapter 6.2 --- Experimental Results --- p.6-2
Chapter 6.3 --- Data Analysis and Discussion --- p.6-17
Chapter 6.4 --- Summary --- p.6-27
Chapter Chapter 7 --- Optical Control of Polarity in Short Electrical Pulses Generated from Coplanar Waveguide MSM Photodetectors --- p.7-1
Chapter 7.1 --- General Description --- p.7-1
Chapter 7.2 --- "Structure, Fabrication and Experimental Set-up" --- p.7-1
Chapter 7.3 --- Experimental Results --- p.7-4
Chapter 7.4 --- Data Analysis and Discussion --- p.7-11
Chapter 7.5 --- Applications --- p.7-18
Chapter Chapter 8 --- Conclusion --- p.8-1
References
Publications
Tsung-HanTsai and 蔡宗翰. "Investigation of III-V Compound Semiconductor Schottky-Type Gas Sensors." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/24484513028779256548.
Повний текст джерела國立成功大學
微電子工程研究所碩博士班
98
In this dissertation, a series of III-V compound semiconductor Schottky-type gas sensors, including Schottky diodes and heterostructure field-effect transistors, are fabricated and studied. III-V compound semiconductors, such as AlGaN- and InAlAs-based materials, are served as sensing platforms. The larger band gaps of those materials make the fabricated devices suitable for high-temperature operation. Pd and Pt are used as sensing metals due to their excellent catalytic activity toward hydrogen and ammonia gases, respectively. The electrical characteristics and gas-sensing performance of these sensors are investigated at different temperatures. Furthermore, the influence of gate insulator on the sensing performance of each sensing device is studied. First, hydrogen-sensing characteristics of metal semiconductor (MS) Pd/AlGaN-based and metal-oxide-semiconductor (MOS) Pd/SiO2/AlGaN-based Schottky diode-type sensors are studied. Thermionic emission (TE) equation is employed to characterize the current-voltage (I-V) behaviors of the studied devices under exposing to hydrogen gas. Schottky barrier height, ideality factor, and series resistance extracted from TE equation, are found to be sensitive to hydrogen gases with different concentrations. Hydrogen sensing behaviors of MS and MOS devices are investigated in terms of those diode parameters, sensing response, and response time. Second, ammonia-sensing characteristics of a Pt/AlGaN-based Schottky diode are studied. Pt metal shows high catalytic activity to ammonia gas. It is, therefore, used as the sensing metal for ammonia detection. Based on the “triple-point theorem”, SiO2 layer is employed to increase the “boundaries” between SiO2, Pt metal, and NH3 molecules, thus facilitating the dissociation of NH3 molecules. The temperature-dependent NH3 sensing behaviors are investigated for the studied device. Third, metamorphic high electron mobility transistors (MHEMTs)-type hydrogen sensors with catalytically active palladium (Pd) gate electrodes are fabricated and studied. Hydrogen-induced effects on electrical parameters of a field-effect transistor (FET), such as threshold voltage, transconductance, and on-off current ratio are investigated. Equilibrium adsorption and kinetic adsorption are studied for the devices. In addition, an MHEMT with thermally-grown gate oxide are also fabricated to be compared with the metal-oxide (MS) Pd/MHEMTs. It is found that the electrical and sensing performance of the MHEMTs is significantly improved by the thermally-grown gate oxide. Based on the good results and compatibility of fabrication process of these devices, the studied devices show the promise for the integration of high-performance sensor and micro-electro-mechanical system (MEMS).
Liu, Po-Chun, and 劉柏均. "Fundamental Studies and Applications of III-V Compound Semiconductor Wafer Bonding." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/98555331287451114209.
Повний текст джерела國立交通大學
材料科學與工程系所
93
The main topics of this thesis can be divided into two categories: (1) The investigation of boned interfaces of III-V compound semiconductors; (2) Applications of III-V compound semiconductors wafer bonding to optoelectronic devices. In the first category, the effects of annealing temperature on the morphology and the change of electrical property of bonded interfaces were discussed. In addition, the effects of the rotational misalignments and relative surface misorientations between two wafers on electrical resistance of bonded wafers were also studied. In the second category, a seed layer was bonded and transferred to a large lattice mismatched substrate first. Then, the heteroepitaxy layer was grown on the large lattice mismatched substrate successfully by means of the seed layer. Furthermore, to optimum the wafer bonding process of high brightness LEDs (Light emitting diodes), an intermediate layer was used to decrease wafer bonding temperature. Si doped n-type (100) GaAs wafers which have native oxide were used for systematically investigation of the bonded interface and the electrical characteristics. For estimating the electrical characteristics of bonded wafer, single GaAs wafers and two-layer bonded stacks were annealed at the same temperature (400-850℃). Experimental results indicated that GaAs bond via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. The electrical resistance of bonded interface decreased with the increase of bonded temperature. However, the resistance increased with temperatures exceeding 850 °C. This result caused by the oxygen in-diffusion into n-GaAs and the effect of inversion. P-type GaAs samples were also pressed against each other and annealed under identical thermal conditions. The electrical resistance of bonded interface decreased with the increase of bonded temperature, even the temperatures exceeds 850 °C. Results evidence that the event of inversion of n-GaAs wafers were occurred. Besides, the relationship between various bonding angle and the change of electrical resistance was also studied. Both anti-phase and in-phase structures were bonded at 700 ℃ for 1 hr. It was observed that a thin amorphous layer (about 5 nm) existed at the anti-phase bonded interface. The amorphous layer in the anti-phase bonding structure caused the higher electrical resistance than that was in-phase bonding structure. Layer transfer technique is one of important applications of wafer bonding to optoelectronic devices. A 50 nm n-In0.5Ga0.5P layer with line patterns was transferred to the n-GaP substrate. This line patterned layer acted as a seed layer for quaternary alloy (AlxGa1-x)0.5In0.5P heteroepitaxy. Almost no defects were observed in the transferred layer and only few changes in the optical property. Moreover, it was discovered that the interface electrical resistance rose while surface misorientations were added. The quaternary alloy which had low defect density and fine optoelectronic property was grown on the line patterned substrate successfully. Wafer-direct-bonding technique is usually used to the fabrication of high brightness LEDs. However, bonding processes were usually performed at elevated temperatures, possibly causing degradation in the quality of the LED structure. In addition to this, misorientation between the two bonded wafers may have caused defects between the wafers. In this study, these two problems were solved by bonding the InGaP/GaAs and GaAs wafers with an indium tin oxide (ITO) polycrystalline film at temperatures below 650 ℃. It was found that the bonding occurred mainly through the In transport from the InGaP to ITO, and that the electrical resistance decreased with the bonding temperature. Then, the intermediate layer was used to fabricate high brightness LEDs. Compared with wafer direct bonding technique, the lower threshold voltage and the higher operating current can be gained by using the ITO intermediate layer.
WU, ZHONG-ZHENG, and 吳忠政. "The study on III-V compound semiconductor hetero-structure bipolar transistors." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/34552352073463873263.
Повний текст джерелаLi, Kang. "Growth and characterisation of [delta]-doped III-V compound semiconductors." Phd thesis, 1996. http://hdl.handle.net/1885/138430.
Повний текст джерелаCrain, Nathaniel Charles. "Redesign and refurbishment of a III-V compound semiconductor wet oxidation furnace." 2004. http://etd.nd.edu/ETD-db/theses/available/etd-04162004-140016/.
Повний текст джерелаGonzález, Debs Mariam. "Nanoscopic diffusion studies on III-V compound semiconductor structures : experiment and theory /." 2005. http://catalog.hathitrust.org/api/volumes/oclc/70854057.html.
Повний текст джерела