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Автор: Grafiati

Опубліковано: 6 вересня 2023

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1

Mitra, Somak, Mufasila Mumthaz Muhammed, Norah Alwadai, Dhaifallah R. Almalawi, Bin Xin, Yusin Pak, and Iman S. Roqan. "Optimized performance III-nitride-perovskite-based heterojunction photodetector via asymmetric electrode configuration." RSC Advances 10, no. 10 (2020): 6092–97. http://dx.doi.org/10.1039/c9ra08823g.

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Анотація:

Enhanced perovskite/GaN-based broad-band photodetector is demonstrated by optimizing electrode configurations. The detection capability of the optimized perovskite/GaN structure was extended to UV range with fast response and high responsivity.

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2

Nikzad, Shouleh, Michael Hoenk, April Jewell, John Hennessy, Alexander Carver, Todd Jones, Timothy Goodsall, et al. "Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials." Sensors 16, no. 6 (June 21, 2016): 927. http://dx.doi.org/10.3390/s16060927.

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3

Mohammad, S. N., W. Kim, A. Salvador, and H. Morkoç. "Reactive Molecular-Beam Epitaxy for Wurtzite GaN." MRS Bulletin 22, no. 2 (February 1997): 22–28. http://dx.doi.org/10.1557/s0883769400032528.

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A1N, GaN, and InN are very promising materials for use in optoelectronic and high-temperature electronic devices. These materials and their ternary and quaternary alloys cover an energy bandgap range of 1.9–6.2 eV, suitable for band-to-band light generation with colors ranging from red to ultraviolet (uv), with wavelengths ranging from 650 to 200 nm. On the device front, they are suitable for example for negative electron-affinity cold cathodes, electronic devices, surface acoustic wave devices, uv detectors, Bragg reflectors and waveguides, uv and visible light-emitting diodes (LEDs), and laser diodes (LDs) for digital data read-write applications. Stifled by the absence of native substrates, growth and doping of high-quality III-V-nitride thin films, particularly p-type, have been major obstacles for developing GaN-based devices. Development of electronic devices such as modulation-doped field-effect transistors (MODFETs) and opto-electronic devices such as LEDs and LDs has also proven challenging.

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4

Chang, P. C., K. H. Lee, S. J. Chang, Y. K. Su, T. C. Lin, and S. L. Wu. "III-Nitride Schottky Rectifiers With an AlGaN/GaN/AlGaN/GaN Quadruple Layer and Their Applications to UV Detection." IEEE Sensors Journal 10, no. 4 (April 2010): 799–804. http://dx.doi.org/10.1109/jsen.2009.2034626.

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5

Kuball, M., M. Benyoucef, F. H. Morrissey, and C. T. Foxon. "Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 950–56. http://dx.doi.org/10.1557/s1092578300005317.

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We report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

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6

Li, Yu Bo, Jian Wei Zhong, Li Ming Zhou, Chao Lun Sun, Xiao Wang, Hang Sheng Yang, and William Milne. "Deep Ultraviolet Photodetector Based on Sulphur-Doped Cubic Boron Nitride Thin Film." Materials Science Forum 879 (November 2016): 1117–22. http://dx.doi.org/10.4028/www.scientific.net/msf.879.1117.

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Cubic boron nitride (c-BN) is a wide bandgap III-V compound semiconductor potentially useful for solar-blind photodetectors. This paper describes work on the use of Sulphur doping to adjust the bandgap of c-BN films prepared by plasma-enhanced chemical vapor deposition (PECVD). An S-doped c-BN film based metal-semiconductor-metal (MSM) solar-blind ultraviolet (SBUV) photodetector was successfully fabricated and its electro-optical properties were characterized. The photocurrent shows peak responsivity at 254nm with sharp cutoff wavelengths at 220 and 300 nm, respectively, which is appropriate for use in solar-blind detection. The maximum response reached 1.55×10-7 A/W/cm2 with a rejection ratio of more than three orders of magnitude. The high solar-blind region UV response could be attributed to the successful substitution of boron by Sulphur and the suppression of B vacancies. The experimental results show the same peak in response at around 254nm as is found in the theoretical analysis.

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7

Wang, Lian Jia, You Zhang Zhu, Hong Xia Wang, Ben Li Liu, and Jin She Yuan. "Cathodeluminescence Characterization of AlGaN Film Grown by MOCVD." Advanced Materials Research 143-144 (October 2010): 966–70. http://dx.doi.org/10.4028/www.scientific.net/amr.143-144.966.

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Recent achievements in III-nitride semiconductor structures growth have allowed ultraviolet (UV) photo-detectors based on these compounds to be well established today. In this article, AlGaN film of 1-μm thickness was grown on Al2O3 substrate by metal-organic chemical vapor deposition (MOCVD). The AFM was used to analyze the surface morphology of the AlGaN film; X-ray diffraction measurements were used to study the quality of the film’ crystal structure; Cathode-ray luminescence(CL) was employed to study the luminescence properties of the AlGaN film. The result shows that there is a single atom layer on the AlGaN film’surface, and it shows that a low-defect-density AlGaN film with good surface morphology and single crystal Hexagonal structure has been obtained. It is found that there is some relationship between the film’crystal structure , dislocations and the luminescence properties . PACS: 73.61.

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8

Alamoudi, Hadeel, Bin Xin, Somak Mitra, Mohamed N. Hedhili, Singaravelu Venkatesh, Dhaifallah Almalawi, Norah Alwadai, Zohoor Alharbi, Ahmad Subahi, and Iman S. Roqan. "Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure." Applied Physics Letters 120, no. 12 (March 21, 2022): 122102. http://dx.doi.org/10.1063/5.0083259.

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Obtaining p-type wide-bandgap semiconductors with a bandgap >3.5 eV is still challenging. Here, p–n junction devices based on wide-bandgap (≥4 eV) p-type MnO quantum dots (QDs) and n-type Si-doped GaN are fabricated. The p-MnO QDs are synthesized by cost-effective femtosecond laser ablation in liquid. A simple spray-coating method is used for fabricating the p-MnO/n-GaN-based solar-blind deep UV (DUV) photodetector. X-ray diffraction, transmission electron microscopy, and Raman spectroscopy reveal the MnO QD crystal structure. X-ray photoelectron microscopy analysis reveals good band alignment between p-MnO QDs and n-GaN, demonstrating the (type-II) staggered band alignment p–n heterojunction-based device. Electrical and photocurrent measurements show a high photocurrent response with a low dark current, while superior photo-responsivity (∼2530 mA/W) is achieved, along with self-powered and visible-blind characteristics (265 nm cutoff), demonstrating a high-performance DUV device with high detection limit for low light level applications. This study provides insights into the potential of p-type MnO QDs for III-nitride p–n junction DUV devices.

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9

Chatterjee, Abhijit, Shashidhara Acharya, and S. M. Shivaprasad. "Morphology-Related Functionality in Nanoarchitectured GaN." Annual Review of Materials Research 50, no. 1 (July 1, 2020): 179–206. http://dx.doi.org/10.1146/annurev-matsci-081919-014810.

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Integrating silicon and III-nitride technologies for high-speed and large bandwidth communication demands optically interconnected active components that detect, process, and emit photons and electrons. It is imperative that multifunctional materials can enhance the performance and simplify fabrication of such devices. Spontaneously grown GaN in the nanowall network (NwN) architecture simultaneously displays unprecedented optical and electrical properties. A two-order increase in band-edge emission makes it suitable for high-brightness light-emitting diodes and laser applications. Decorating this NwN with silver nanoparticles further enhances emission through plasmonic interactions and renders it an excellent surface-enhanced Raman spectroscopy substrate for biomolecular detection. The observation of very high electron mobility (approximately 104 cm2/Vs) and large phase-coherence length (60 μm) is a consequence of two-dimensional (2D) electron gas formation applicable for high electron mobility transistors. Detecting ballistic transport in the nanowalls confirms proximity-induced superconductivity (<5 K and 8 T). Charge separation properties render it a device material for UV photodetectors, photoanodes for water splitting, and thermionic field emitters.

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10

Muñoz, E., E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart. "III nitrides and UV detection." Journal of Physics: Condensed Matter 13, no. 32 (July 26, 2001): 7115–37. http://dx.doi.org/10.1088/0953-8984/13/32/316.

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11

Asif Khan, M., M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis. "III–Nitride UV Devices." Japanese Journal of Applied Physics 44, no. 10 (October 11, 2005): 7191–206. http://dx.doi.org/10.1143/jjap.44.7191.

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12

Atkinson, Noah, Tyler A. Morhart, Garth Wells, Grace T. Flaman, Eric Petro, Stuart Read, Scott M. Rosendahl, Ian J. Burgess, and Sven Achenbach. "Microfabrication Process Development for a Polymer-Based Lab-on-Chip Concept Applied in Attenuated Total Reflection Fourier Transform Infrared Spectroelectrochemistry." Sensors 23, no. 14 (July 8, 2023): 6251. http://dx.doi.org/10.3390/s23146251.

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Micro electro-mechanical systems (MEMS) combining sensing and microfluidics functionalities, as are common in Lab-on-Chip (LoC) devices, are increasingly based on polymers. Benefits of polymers include tunable material properties, the possibility of surface functionalization, compatibility with many micro and nano patterning techniques, and optical transparency. Often, additional materials, such as metals, ceramics, or silicon, are needed for functional or auxiliary purposes, e.g., as electrodes. Hybrid patterning and integration of material composites require an increasing range of fabrication approaches, which must often be newly developed or at least adapted and optimized. Here, a microfabrication process concept is developed that allows one to implement attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and electrochemistry on an LoC device. It is designed to spatially resolve chemical sensitivity and selectivity, which are instrumental for the detection of chemical distributions, e.g., during on-flow chemical and biological reaction chemistry. The processing sequence involves (i) direct-write and soft-contact UV lithography in SUEX dry resist and replication in polydimethylsiloxane (PDMS) elastomers as the fluidic structure; (ii) surface functionalization of PDMS with oxygen plasma, 3-aminopropyl-triethoxysilane (APTES), and a UV-curable glue (NOA 73) for bonding the fluidic structure to the substrate; (iii) double-sided patterning of silicon nitride-coated silicon wafers serving as the ATR-FTIR-active internal reflection element (IRE) on one side and the electrode-covered substrate for microfluidics on the back side with lift-off and sputter-based patterning of gold electrodes; and (iv) a custom-designed active vacuum positioning and alignment setup. Fluidic channels of 100 μm height and 600 μm width in 5 mm thick PDMS were fabricated on 2” and 4” demonstrators. Electrochemistry on-chip functionality was demonstrated by cyclic voltammetry (CV) of redox reactions involving iron cyanides in different oxidation states. Further, ATR-FTIR measurements of laminar co-flows of H2O and D2O demonstrated the chemical mapping capabilities of the modular fabrication concept of the LoC devices.

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13

Eisenberg, I., H. Alpern, V. Gutkin, S. Yochelis, and Y. Paltiel. "Dual mode UV/visible-IR gallium-nitride light detector." Sensors and Actuators A: Physical 233 (September 2015): 26–31. http://dx.doi.org/10.1016/j.sna.2015.06.022.

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14

MUÑOZ, ELIAS. "SEMICONDUCTOR UV SOURCES AND DETECTORS: SOME NON-CONSUMER APPLICATIONS." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 421–28. http://dx.doi.org/10.1142/s0129156402001344.

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Анотація:

UV emitters and photodetectors based on wide band-gap semiconductors are being investigated and may soon become commercially available. Solid state lighting and information storage are two main applications in the consumer area for these new semiconductor devices. Presently, III-nitrides seem to be the most promising materials for such near UV semiconductor devices. In this work some non-consumer applications are indicated. Biophotonics appears to be a very promising area for such devices.

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15

SAWYER, SHAYLA, LIQIAO QIN, and CHRISTOPHER SHING. "ZINC OXIDE NANOPARTICLES FOR ULTRAVIOLET PHOTODETECTION." International Journal of High Speed Electronics and Systems 20, no. 01 (March 2011): 183–94. http://dx.doi.org/10.1142/s0129156411006519.

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Zinc Oxide ( ZnO ) nanoparticles were created by a top-down wet-chemistry synthesis process ( ZnO - A ) and then coated with polyvinyl-alcohol (PVA) ( ZnO - U ). In ZnO - U , strong UV emission was apparent while the parasitic green emission, which normally appears in ZnO suspensions, was suppressed. A standard lift-off process via e-beam lithography was used to fabricate a detector by evaporating Aluminum ( Al ) as ohmic electrodes on the ZnO nanoparticle film. Photoconductivity experiments showed that linear current-voltage response were achieved and the ZnO - U nanoparticles based detector had a ratio of UV photo-generated current more than 5 times better than that of the ZnO - A based detector. In addition, non-linear current-voltage responses were observed when interdigitated finger Gold ( Au ) contacts were deposited on ZnO - U . The UV generated current to dark current ratios were between 4 and 7 orders of magnitude, showing better performance than the photodetector with Al contacts. ZnO - U were also deposited on Gallium Nitride ( GaN ) and Aluminum Gallium Nitride ( AlGaN ) substrates to create spectrally selective photodetectors. The responsivity of detector based on AlGaN is twice that of commercial UV enhanced Silicon photodiodes. These results confirmed that ZnO nanoparticles coating with PVA is a good material for small-signal, visible blind, and wavelength selective UV detection.

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16

Watanabe, Yoshihisa, Yoshifumi Sakuragi, Yoshiki Amamoto, and Yoshikazu Nakamura. "Changes in optical transmittance and surface morphology of AlN thin films exposed to atmosphere." Journal of Materials Research 13, no. 10 (October 1998): 2956–61. http://dx.doi.org/10.1557/jmr.1998.0404.

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Aluminum nitride (AlN) thin films have been prepared by the ion-beam assisted deposition (IBAD) method, and the influence of exposure to different atmosphere on optical transmittance and surface morphology has been studied. AlN films have been prepared with the nitrogen ion beam energy of 0.1, 0.2, or 1.5 keV. Synthesized films have been exposed to the following conditions: (i) laboratory air (RT and 40–60% RH), (ii) saturated humidity air (RT and 80–90% RH), and (iii) elevated temperature air (100 °C and 10–20% RH). Optical transmission spectrum in the wavelength region from 190 to 2200 nm has been measured by a UV-visible spectrometer every week. Surface morphology of the films has been observed with an optical microscope (OM), and phase identification has been performed by thin film x-ray diffraction (TFXRD). The optical transmittance has not changed drastically after exposure both to the laboratory air and the saturated humidity air for 60 weeks and after exposure to the elevated temperature air for 48 weeks. Observations by OM showed that round-shaped substances were formed on the film surfaces after exposure to the atmosphere, and the size of the substances on the film surface exposed to saturated humidity air is much larger than those on the surface exposed to other atmosphere. The results of TFXRD revealed that the AlN diffraction peaks have gradually decreased with exposure time, but any new phase due to reaction products has not been detected for the samples exposed to the laboratory air, the saturated humidity air, or the elevated temperature air. From the present results, it is concluded that the IBAD AlN films can be applied in low humidity air without losing high transparency up to 60 weeks, and the films prepared with 1.5 keV ion beam show better durability than the films prepared with 0.1 or 0.2 keV ion beam for exposure to the saturated humidity air.

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17

Amano, H., S. Takanami, M. Iwaya, S. Kamiyama, and I. Akasaki. "Group III nitride-based UV light emitting devices." physica status solidi (a) 195, no. 3 (February 2003): 491–95. http://dx.doi.org/10.1002/pssa.200306141.

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18

Saito, Terubumi, Toshimi Hitora, Hisako Hitora, Hiroji Kawai, Ichiro Saito, and Eiichi Yamaguchi. "UV/VUV photodetectors using group III-nitride semiconductors." physica status solidi (c) 6, S2 (March 12, 2009): S658—S661. http://dx.doi.org/10.1002/pssc.200880876.

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19

Ren, Zhongjie, Yi Lu, Hsin-Hung Yao, Haiding Sun, Che-Hao Liao, Jiangnan Dai, Changqing Chen, et al. "III-Nitride Deep UV LED Without Electron Blocking Layer." IEEE Photonics Journal 11, no. 2 (April 2019): 1–11. http://dx.doi.org/10.1109/jphot.2019.2902125.

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20

Drabinska, Aneta, K. P. Korona, K. Pakula, and J. M. Baranowski. "Electroreflectance and photoreflectance spectra of tricolor III-nitride detector structures." physica status solidi (a) 204, no. 2 (February 2007): 459–65. http://dx.doi.org/10.1002/pssa.200673965.

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21

Nikishin, Sergey. "III-Nitride Short Period Superlattices for Deep UV Light Emitters." Applied Sciences 8, no. 12 (November 23, 2018): 2362. http://dx.doi.org/10.3390/app8122362.

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III-Nitride short period superlattices (SPSLs), whose period does not exceed ~2 nm (~8 monolayers), have a few unique properties allowing engineering of light-emitting devices emitting in deep UV range of wavelengths with significant reduction of dislocation density in the active layer. Such SPSLs can be grown using both molecular beam epitaxy and metal organic chemical vapor deposition approaches. Of the two growth methods, the former is discussed in more detail in this review. The electrical and optical properties of such SPSLs, as well as the design and fabrication of deep UV light-emitting devices based on these materials, are described and discussed.

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22

Creighton, J. R., D. D. Koleske, and C. C. Mitchell. "Emissivity-correcting near-UV pyrometry for group-III nitride OMVPE." Journal of Crystal Growth 287, no. 2 (January 2006): 572–76. http://dx.doi.org/10.1016/j.jcrysgro.2005.10.078.

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23

Bell, L. Douglas, Neeraj Tripathi, J. R. Grandusky, Vibhu Jindal, and F. Shadi Shahedipour-Sandvik. "III-Nitride Heterostructure Layered Tunnel Barriers For a Tunable Hyperspectral Detector." IEEE Sensors Journal 8, no. 6 (June 2008): 724–29. http://dx.doi.org/10.1109/jsen.2008.923180.

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24

Aldalbahi, Ali, Rafael Velázquez, Andrew F. Zhou, Mostafizur Rahaman, and Peter X. Feng. "Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors." Nanomaterials 10, no. 8 (July 23, 2020): 1433. http://dx.doi.org/10.3390/nano10081433.

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This study presents a fast and effective method to synthesize 2D boron nitride/tungsten nitride (BN–WN) nanocomposites for tunable bandgap structures and devices. A few minutes of synthesis yielded a large quantity of high-quality 2D nanocomposites, with which a simple, low-cost deep UV photo-detector (DUV-PD) was fabricated and tested. The new device was demonstrated to have very good performance. High responsivity up to 1.17 A/W, fast response-time of lower than two milliseconds and highly stable repeatability were obtained. Furthermore, the influences of operating temperature and applied bias voltage on the properties of DUV-PD as well as its band structure shift were investigated.

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25

Khan, Asif, and Krishnan Balakrishnan. "Present Status of Deep UV Nitride Light Emitters." Materials Science Forum 590 (August 2008): 141–74. http://dx.doi.org/10.4028/www.scientific.net/msf.590.141.

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Ultraviolet light emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of deep-UV light-emitting devices with emission from 400 to 210 nm with varying efficiencies. For high aluminum alloy compositions needed for the shorter wavelength devices, these materials border between having material properties like conventional semiconductors and insulators, adding a degree of complexity to developing efficient light emitting devices. This chapter provides a review of III-nitride based UV light emitting devices including technical developments that allow for emission in the ultraviolet spectrum, and an overview of their applications in optoelectronic systems.

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26

Wieben, Jens, Carsten Beckmann, Hady Yacoub, Andrei Vescan, and Holger Kalisch. "Development of a III-nitride electro-optical modulator for UV–vis." Japanese Journal of Applied Physics 58, SC (April 17, 2019): SCCC04. http://dx.doi.org/10.7567/1347-4065/ab079e.

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27

Akasaki, Isamu, and Hiroshi Amano. "Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices." Journal of The Electrochemical Society 141, no. 8 (August 1, 1994): 2266–71. http://dx.doi.org/10.1149/1.2055104.

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28

Bouzid, F., and F. Pezzimenti. "Influence of the thickness of frontal platinum metallic layer on the electro-optical characteristics of GaN-based Schottky ultraviolet photodetectors." Semiconductor Physics, Quantum Electronics and Optoelectronics 25, no. 3 (October 6, 2022): 323–30. http://dx.doi.org/10.15407/spqeo25.03.323.

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In this work, we evaluated the effect of the thickness of frontal metallic layer on the electro-optical characteristics of an n-type gallium nitride (n-GaN)-based Schottky barrier ultraviolet (UV) detector using device modeling and numerical simulations. Comparison of the current density-voltage characteristics J(V) calculated for different metals demonstrated that platinum (Pt) is the most suitable metal to form Schottky contacts. The obtained results show that the thickness of the frontal platinum Schottky contact highly affects the spectral responsivity of the detector in the considered UV range of 0.2…0.4 µm. In particular, the detector responsivity at room temperature can reach the peak value of 0.208 A·W–1 at the wavelength of 0.364 µm and the semi-transparent Pt layer as thin as 1 nm. Afterward, it gradually decreases with the increase of the metal layer thickness down to 0.147 A·W–1 for the thickness of the Pt layer of 100 nm.

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29

Tripathi, N., L. D. Bell, and F. Shahedipour-Sandvik. "AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization." Journal of Applied Physics 109, no. 12 (June 15, 2011): 124508. http://dx.doi.org/10.1063/1.3599878.

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30

Song, Yu, Rajaram Bhat, Tzu-Yung Huang, Pranav Badami, Chung-En Zah, and Claire Gmachl. "III-nitride quantum cascade detector grown by metal organic chemical vapor deposition." Applied Physics Letters 105, no. 18 (November 3, 2014): 182104. http://dx.doi.org/10.1063/1.4901220.

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31

Fan, Zelong, Zuoyan Qin, Zhenhua Sun, and Honglei Wu. "Broad Spectrum Detector Based on AlN Crystal." Journal of Physics: Conference Series 2350, no. 1 (September 1, 2022): 012013. http://dx.doi.org/10.1088/1742-6596/2350/1/012013.

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Abstract Aluminum nitride(AlN) has an ultra-wide bandgap, which is one of the ideal materials for developing ultraviolet optoelectronic devices and has promising applications in the fields of space environment monitoring and materials science. Due to the existence of defects in the crystal growth process, broad-spectrum detectors were fabricated based on defective state AlN crystals. In this paper, AlN crystal detectors were fabricated and investigated the effect of different electrode work functions on the turn-on voltage. The vertical structure W-AlN-W device achieved broad spectral detection from ultraviolet(UV) to near-infrared(NIR) due to the presence of defects in the crystal, and persistent photoconductivity effect was observed for band-edge excitation. The present work provides implications for the development of AlN crystal-based detectors.

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32

Gu, Wen, Yi Lu, Rongyu Lin, Wenzhe Guo, Zihui Zhang, Jae-Hyun Ryou, Jianchang Yan, Junxi Wang, Jinmin Li, and Xiaohang Li. "BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer." Journal of Physics D: Applied Physics 54, no. 17 (February 12, 2021): 175104. http://dx.doi.org/10.1088/1361-6463/abdefc.

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33

Ciers, Joachim, Gwénolé Jacopin, Gordon Callsen, Catherine Bougerol, Jean-François Carlin, Raphaël Butté, and Nicolas Grandjean. "Near-UV narrow bandwidth optical gain in lattice-matched III–nitride waveguides." Japanese Journal of Applied Physics 57, no. 9 (July 30, 2018): 090305. http://dx.doi.org/10.7567/jjap.57.090305.

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34

Ren, Bin, Hui Guo, Feng Shi, Hong-Chang Cheng, Hui Liu, Jian Liu, Zhi-Hui Shen, Yan-Li Shi, and Pei Liu. "A theoretical and experimental evaluation of III–nitride solar-blind UV photocathode." Chinese Physics B 26, no. 8 (August 2017): 088504. http://dx.doi.org/10.1088/1674-1056/26/8/088504.

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35

Kneissl, M., T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, et al. "Advances in group III-nitride-based deep UV light-emitting diode technology." Semiconductor Science and Technology 26, no. 1 (December 15, 2010): 014036. http://dx.doi.org/10.1088/0268-1242/26/1/014036.

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36

Fu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 34 (October 9, 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.

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Due to their large bandgap, high critical electric field, and availability of high-quality large-size melt-grown bulk substrates, III-oxides including Ga2O3, Al2O3, In2O3, and their alloys have been extensively investigated for a myriad of electronic and optoelectronic applications. Recently, β-Ga2O3 based power electronics, RF transistors, and ultraviolet (UV) photodetectors have been demonstrated with promising performance. However, p-type β-Ga2O3 is still elusive due to high dopant activation energy (>1 eV), large hole effective mass, and hole trapping. This significantly limits the design freedom for β-Ga2O3 devices. Other p-type semiconductors have been proposed to form heterostructures with β-Ga2O3 such as p-NiO, p-Cu2O, and p-type III-nitrides. As popular wide bandgap semiconductors, III-nitrides are promising candidates to form III-oxide/III-nitride heterostructures to enable advanced device structures and new functionalities. Furthermore, III-oxides and III-nitrides can be epitaxially grown on each other with small lattice mismatch (< 5% for GaN and β-Ga2O3) by the industrial standard epitaxial method MOCVD. For example, vertical GaN violet LEDs grown on n-type β-Ga2O3 substrates have been reported. This talk will present our recent work on III-oxide/III-nitride heterostructures in power electronics and optoelectronics. For power electronics, β-Ga2O3/GaN p-n heterojunctions will first be discussed. The heterojunction via mechanical exfoliation shows decent forward rectifying behaviors and thermal stability up to 200 °C but relatively low breakdown voltages (BV). To improve the breakdown capability, we carried out a comprehensive TCAD simulation study to design mesa edge termination for kV-class β-Ga2O3/GaN p-n heterojunctions. It was found that the electric field crowding effect is the main reason for the low BV. Several mesa edge termination structures were investigated such as deeply-etched mesa, step mesa, and p-GaN guard ring. Second, normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping will be discussed. A large two-dimensional electron gas is formed at the AlN/β-Ga2O3 interface due to polarization effects, and p-GaN gate is used to realize tunable positive threshold voltage. The device transfer and output characteristics with different device structures are also studied. For optoelectronics applications, self-powered spectrally distinctive Ga2O3/GaN heterojunction UV photodetectors grown by MOCVD will be discussed. Opposite current polarities are observed under different illumination wavelengths due to different carrier transports, which can be utilized to distinguish different spectra. These results indicate that (ultra)wide bandgap III-oxide/III-nitride heterostructures are a promising platform to enable new device structures and functionalities.

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37

Sajjad, Muhammad, Wojciech M. Jadwisienczak, and Peter Feng. "Nanoscale structure study of boron nitride nanosheets and development of a deep-UV photo-detector." Nanoscale 6, no. 9 (2014): 4577–82. http://dx.doi.org/10.1039/c3nr05817d.

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38

Kleindienst, R., P. Becker, V. Cimalla, A. Grewe, P. Hille, M. Krüger, J. Schörmann, et al. "Integration of an opto-chemical detector based on group III-nitride nanowire heterostructures." Applied Optics 54, no. 4 (January 28, 2015): 839. http://dx.doi.org/10.1364/ao.54.000839.

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39

Wang, Mengjun, Jinpeng Li, Zichun Fan, Shining Wu, Juanjuan Ma, Xiaobo Zhang, Lin Liu, and Zhiwei Tong. "A nanocomposite constructed by intercalating iron porphyrin into layered tantalotungstate with exfoliation/self-assembly method utilized for electrocatalytic oxidation of nitrite." Functional Materials Letters 12, no. 05 (September 17, 2019): 1950069. http://dx.doi.org/10.1142/s1793604719500693.

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Exfoliation/restacking route was utilized to investigate layer-by-layer self-assembly of FeTMPyP/TaWO6 [5, 10, 15, 20-tetrakis (N-methylpyridinium-4-yl) porphyrinato iron (III)] nanocomposite in this paper. The colloidal suspension of [Formula: see text] nanosheet was tested by Zeta potential and proved to be in a well-dispersed statement. Analysis technologies such as X-ray diffraction Scanning electron microscope (SEM) infrared UV-Vis were used to characterize the final product. The results showed that FeTMPyP molecules were introduced into the lamellar space of host material successfully. The electrochemical behaviors of FeTMPyP-TaWO6 nanocomposite were tested by cyclic voltammetry method, and the nanocomposite showed excellent electrocatalytic properties to the oxidation of nitrite with the anodic peak shifts from 0.122 to 0.860[Formula: see text]V. Besides, the detection limit of nitrite can be calculated to be [Formula: see text][Formula: see text]M with the concentration of nitrite ranging from 0.1 to 3.61[Formula: see text]mM by different pulse voltammetry (DPV) analyzation.

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40

AKASAKI, I., and H. AMANO. "ChemInform Abstract: Widegap Group-III Nitride Semiconductors for UV/Blue Light Emitting Devices." ChemInform 25, no. 48 (August 18, 2010): no. http://dx.doi.org/10.1002/chin.199448267.

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41

Sajjad, Muhammad, Wojciech M. Jadwisienczak, and Peter Feng. "Correction: Nanoscale structure study of boron nitride nanosheets and development of a deep-UV photo-detector." Nanoscale 6, no. 24 (2014): 15346. http://dx.doi.org/10.1039/c4nr90099e.

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42

Römer, Friedhard, Martin Guttmann, Tim Wernicke, Michael Kneissl, and Bernd Witzigmann. "Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes." Materials 14, no. 24 (December 20, 2021): 7890. http://dx.doi.org/10.3390/ma14247890.

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In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) LEDs is still in progress. The polarisation in the anisotropic wurtzite lattice and the low free hole density in p-doped III-nitride compounds with high aluminium content make the design for high efficiency a critical step. The growth kinetics of the rather thin active quantum wells in III-nitride LEDs makes them prone to inhomogeneous broadening (IHB). Physical modelling of the active region of III-nitride LEDs supports the optimisation by revealing the opaque active region physics. In this work, we analyse the impact of the IHB on the luminescence and carrier transport III-nitride LEDs with multi-quantum well (MQW) active regions by numerical simulations comparing them to experimental results. The IHB is modelled with a statistical model that enables efficient and deterministic simulations. We analyse how the lumped electronic characteristics including the quantum efficiency and the diode ideality factor are related to the IHB and discuss how they can be used in the optimisation process.

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43

Ng, H. M., and T. D. Moustakas. "High reflectance III-Nitride Bragg reflectors grown by molecular beam epitaxy." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 28–34. http://dx.doi.org/10.1557/s109257830000404x.

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Distributed Bragg reflector (DBR) structures based on AlN/GaN have been grown on (0001) sapphire by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy (ECR-MBE). The design of the structures was predetermined by simulations using the transmission matrix method. A number of structures have been grown with 20.5 – 25.5 periods showing peak reflectance ranging from the near-UV to the green wavelength regions. For the best sample, peak reflectance up to 99% was observed centered at 467 nm with a bandwidth of 45 nm. The experimental reflectance data were compared with the simulations and show excellent agreement with respect to peak reflectance, bandwidth of high reflectance and the locations of the sidelobes.

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44

Franke, A., M. P. Hoffmann, R. Kirste, M. Bobea, J. Tweedie, F. Kaess, M. Gerhold, R. Collazo, and Z. Sitar. "High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers." Journal of Applied Physics 120, no. 13 (October 7, 2016): 135703. http://dx.doi.org/10.1063/1.4963831.

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45

Tao, Tao, Ting Zhi, Bin Liu, Peng Chen, Zili Xie, Hong Zhao, Fangfang Ren, Dunjun Chen, Youdou Zheng, and Rong Zhang. "Electron‐Beam‐Driven III‐Nitride Plasmonic Nanolasers in the Deep‐UV and Visible Region." Small 16, no. 1 (December 3, 2019): 1906205. http://dx.doi.org/10.1002/smll.201906205.

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46

Hossain, Sharif, Christopher W. K. Chow, Guna A. Hewa, David Cook, and Martin Harris. "Spectrophotometric Online Detection of Drinking Water Disinfectant: A Machine Learning Approach." Sensors 20, no. 22 (November 21, 2020): 6671. http://dx.doi.org/10.3390/s20226671.

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The spectra fingerprint of drinking water from a water treatment plant (WTP) is characterised by a number of light-absorbing substances, including organic, nitrate, disinfectant, and particle or turbidity. Detection of disinfectant (monochloramine) can be better achieved by separating its spectra from the combined spectra. In this paper, two major focuses are (i) the separation of monochloramine spectra from the combined spectra and (ii) assessment of the application of the machine learning algorithm in real-time detection of monochloramine. The support vector regression (SVR) model was developed using multi-wavelength ultraviolet-visible (UV-Vis) absorbance spectra and online amperometric monochloramine residual measurement data. The performance of the SVR model was evaluated by using four different kernel functions. Results show that (i) particles or turbidity in water have a significant effect on UV-Vis spectral measurement and improved modelling accuracy is achieved by using particle compensated spectra; (ii) modelling performance is further improved by compensating the spectra for natural organic matter (NOM) and nitrate (NO3) and (iii) the choice of kernel functions greatly affected the SVR performance, especially the radial basis function (RBF) appears to be the highest performing kernel function. The outcomes of this research suggest that disinfectant residual (monochloramine) can be measured in real time using the SVR algorithm with a precision level of ± 0.1 mg L−1.

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47

Lu, Zheng Qian, Yi Pu Qu, Mussaab I. Niass, Muhammad Nawaz Sharif, Yu Huai Liu, and Fang Wang. "Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals." Materials Science Forum 954 (May 2019): 3–8. http://dx.doi.org/10.4028/www.scientific.net/msf.954.3.

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AlN crystals are one of the representative III-V group semiconductor materials. AlN has good electric field characteristics, thermal conductivity and thermal stability. Owing to its wide direct band gap of 6.2eV [1], it can achieve a luminescent wavelength of 210 nanometers in deep ultraviolet, which is an ideal material for UV and deep UV LED devices. But preparation of AlN crystals with PVT for growing conditions demanding, 0.3-0.5 atm of high purity nitrogen atmosphere of growth and the growth of 2100-2400 K temperature [2, 3]. In this paper, two kinds of growth chamber structures are designed and compared. In order to ensure that the temperature gradient between the source material surface and the seed surface satisfy the crystal growth and keep stability in the larger transverse region, [4, 5] the crystal grown on the seed crystal can get better quality.

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48

Jadhav, Aakash, Pegah Bagheri, Andrew Klump, Dolar Khachariya, Seiji Mita, Pramod Reddy, Shashwat Rathkanthiwar, et al. "On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters." Semiconductor Science and Technology 37, no. 1 (November 26, 2021): 015003. http://dx.doi.org/10.1088/1361-6641/ac3710.

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Abstract In this work, an alternative scheme to estimate the resistivity and ionization energy of Al-rich p-AlGaN epitaxial films is developed using two large-area ohmic contacts. Accordingly, the resistivities measured using current–voltage measurements were observed to corroborate the Hall measurements in the Van der Pauw configuration. A free hole concentration of ∼1.5 × 1017 cm−3 and low ionization energy of ∼65 meV in Mg-doped Al0.7Ga0.3N films is demonstrated. Nearly an order of magnitude lower hydrogen concentration than Mg in the as-grown AlGaN films is thought to reduce the Mg passivation and enable higher hole concentrations in Al-rich p-AlGaN films, compared to p-GaN films. The alternate methodology proposed in this work is expected to provide a simpler pathway to evaluate the electrical characteristics of Al-rich p-AlGaN films for future III-nitride ultraviolet light emitters.

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49

How Kee Chun, L. S., J. L. Courant, A. Falcou, P. Ossart, and G. Post. "UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation." Microelectronic Engineering 36, no. 1-4 (June 1997): 69–72. http://dx.doi.org/10.1016/s0167-9317(97)00017-8.

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50

Liang, Banglong, Zili Wang, Cheng Qian, Yi Ren, Bo Sun, Dezhen Yang, Zhou Jing, and Jiajie Fan. "Investigation of Step-Stress Accelerated Degradation Test Strategy for Ultraviolet Light Emitting Diodes." Materials 12, no. 19 (September 25, 2019): 3119. http://dx.doi.org/10.3390/ma12193119.

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III-nitride-based ultraviolet light emitting diode (UV LED) has numerous attractive applications in air and water purification, UV photolithography, and in situ activation of drugs through optical stimulus, solid state lighting, polymer curing, and laser surgery. However, the unclear failure mechanisms and uncertainty reliability have limited its application. Therefore, a design of an appropriate reliability test plan for UV LEDs has become extremely urgent. Compared to traditional reliability tests recommended in LED lighting industry, the step-stress accelerated degradation test (SSADT) is more cost-effective and time-effective. This paper compares three SSADT testing plans with temperature and driving currents as stepwise increasing loads to determine an appropriate test strategy for UV LEDs. The study shows that: (1) the failure mechanisms among different SSADT tests seem to be very different, since the driving current determines the failure mechanisms of UV LEDs more sensitively, and (2) the stepped temperature accelerated degradation test with an appropriate current is recommended for UV LEDs.

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