Статті в журналах з теми "III Nitride UV Detector"
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Mitra, Somak, Mufasila Mumthaz Muhammed, Norah Alwadai, Dhaifallah R. Almalawi, Bin Xin, Yusin Pak, and Iman S. Roqan. "Optimized performance III-nitride-perovskite-based heterojunction photodetector via asymmetric electrode configuration." RSC Advances 10, no. 10 (2020): 6092–97. http://dx.doi.org/10.1039/c9ra08823g.
Повний текст джерелаNikzad, Shouleh, Michael Hoenk, April Jewell, John Hennessy, Alexander Carver, Todd Jones, Timothy Goodsall, et al. "Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials." Sensors 16, no. 6 (June 21, 2016): 927. http://dx.doi.org/10.3390/s16060927.
Повний текст джерелаMohammad, S. N., W. Kim, A. Salvador, and H. Morkoç. "Reactive Molecular-Beam Epitaxy for Wurtzite GaN." MRS Bulletin 22, no. 2 (February 1997): 22–28. http://dx.doi.org/10.1557/s0883769400032528.
Повний текст джерелаChang, P. C., K. H. Lee, S. J. Chang, Y. K. Su, T. C. Lin, and S. L. Wu. "III-Nitride Schottky Rectifiers With an AlGaN/GaN/AlGaN/GaN Quadruple Layer and Their Applications to UV Detection." IEEE Sensors Journal 10, no. 4 (April 2010): 799–804. http://dx.doi.org/10.1109/jsen.2009.2034626.
Повний текст джерелаKuball, M., M. Benyoucef, F. H. Morrissey, and C. T. Foxon. "Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 950–56. http://dx.doi.org/10.1557/s1092578300005317.
Повний текст джерелаLi, Yu Bo, Jian Wei Zhong, Li Ming Zhou, Chao Lun Sun, Xiao Wang, Hang Sheng Yang, and William Milne. "Deep Ultraviolet Photodetector Based on Sulphur-Doped Cubic Boron Nitride Thin Film." Materials Science Forum 879 (November 2016): 1117–22. http://dx.doi.org/10.4028/www.scientific.net/msf.879.1117.
Повний текст джерелаWang, Lian Jia, You Zhang Zhu, Hong Xia Wang, Ben Li Liu, and Jin She Yuan. "Cathodeluminescence Characterization of AlGaN Film Grown by MOCVD." Advanced Materials Research 143-144 (October 2010): 966–70. http://dx.doi.org/10.4028/www.scientific.net/amr.143-144.966.
Повний текст джерелаAlamoudi, Hadeel, Bin Xin, Somak Mitra, Mohamed N. Hedhili, Singaravelu Venkatesh, Dhaifallah Almalawi, Norah Alwadai, Zohoor Alharbi, Ahmad Subahi, and Iman S. Roqan. "Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure." Applied Physics Letters 120, no. 12 (March 21, 2022): 122102. http://dx.doi.org/10.1063/5.0083259.
Повний текст джерелаChatterjee, Abhijit, Shashidhara Acharya, and S. M. Shivaprasad. "Morphology-Related Functionality in Nanoarchitectured GaN." Annual Review of Materials Research 50, no. 1 (July 1, 2020): 179–206. http://dx.doi.org/10.1146/annurev-matsci-081919-014810.
Повний текст джерелаMuñoz, E., E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart. "III nitrides and UV detection." Journal of Physics: Condensed Matter 13, no. 32 (July 26, 2001): 7115–37. http://dx.doi.org/10.1088/0953-8984/13/32/316.
Повний текст джерелаAsif Khan, M., M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis. "III–Nitride UV Devices." Japanese Journal of Applied Physics 44, no. 10 (October 11, 2005): 7191–206. http://dx.doi.org/10.1143/jjap.44.7191.
Повний текст джерелаAtkinson, Noah, Tyler A. Morhart, Garth Wells, Grace T. Flaman, Eric Petro, Stuart Read, Scott M. Rosendahl, Ian J. Burgess, and Sven Achenbach. "Microfabrication Process Development for a Polymer-Based Lab-on-Chip Concept Applied in Attenuated Total Reflection Fourier Transform Infrared Spectroelectrochemistry." Sensors 23, no. 14 (July 8, 2023): 6251. http://dx.doi.org/10.3390/s23146251.
Повний текст джерелаEisenberg, I., H. Alpern, V. Gutkin, S. Yochelis, and Y. Paltiel. "Dual mode UV/visible-IR gallium-nitride light detector." Sensors and Actuators A: Physical 233 (September 2015): 26–31. http://dx.doi.org/10.1016/j.sna.2015.06.022.
Повний текст джерелаMUÑOZ, ELIAS. "SEMICONDUCTOR UV SOURCES AND DETECTORS: SOME NON-CONSUMER APPLICATIONS." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 421–28. http://dx.doi.org/10.1142/s0129156402001344.
Повний текст джерелаSAWYER, SHAYLA, LIQIAO QIN, and CHRISTOPHER SHING. "ZINC OXIDE NANOPARTICLES FOR ULTRAVIOLET PHOTODETECTION." International Journal of High Speed Electronics and Systems 20, no. 01 (March 2011): 183–94. http://dx.doi.org/10.1142/s0129156411006519.
Повний текст джерелаWatanabe, Yoshihisa, Yoshifumi Sakuragi, Yoshiki Amamoto, and Yoshikazu Nakamura. "Changes in optical transmittance and surface morphology of AlN thin films exposed to atmosphere." Journal of Materials Research 13, no. 10 (October 1998): 2956–61. http://dx.doi.org/10.1557/jmr.1998.0404.
Повний текст джерелаAmano, H., S. Takanami, M. Iwaya, S. Kamiyama, and I. Akasaki. "Group III nitride-based UV light emitting devices." physica status solidi (a) 195, no. 3 (February 2003): 491–95. http://dx.doi.org/10.1002/pssa.200306141.
Повний текст джерелаSaito, Terubumi, Toshimi Hitora, Hisako Hitora, Hiroji Kawai, Ichiro Saito, and Eiichi Yamaguchi. "UV/VUV photodetectors using group III-nitride semiconductors." physica status solidi (c) 6, S2 (March 12, 2009): S658—S661. http://dx.doi.org/10.1002/pssc.200880876.
Повний текст джерелаRen, Zhongjie, Yi Lu, Hsin-Hung Yao, Haiding Sun, Che-Hao Liao, Jiangnan Dai, Changqing Chen, et al. "III-Nitride Deep UV LED Without Electron Blocking Layer." IEEE Photonics Journal 11, no. 2 (April 2019): 1–11. http://dx.doi.org/10.1109/jphot.2019.2902125.
Повний текст джерелаDrabinska, Aneta, K. P. Korona, K. Pakula, and J. M. Baranowski. "Electroreflectance and photoreflectance spectra of tricolor III-nitride detector structures." physica status solidi (a) 204, no. 2 (February 2007): 459–65. http://dx.doi.org/10.1002/pssa.200673965.
Повний текст джерелаNikishin, Sergey. "III-Nitride Short Period Superlattices for Deep UV Light Emitters." Applied Sciences 8, no. 12 (November 23, 2018): 2362. http://dx.doi.org/10.3390/app8122362.
Повний текст джерелаCreighton, J. R., D. D. Koleske, and C. C. Mitchell. "Emissivity-correcting near-UV pyrometry for group-III nitride OMVPE." Journal of Crystal Growth 287, no. 2 (January 2006): 572–76. http://dx.doi.org/10.1016/j.jcrysgro.2005.10.078.
Повний текст джерелаBell, L. Douglas, Neeraj Tripathi, J. R. Grandusky, Vibhu Jindal, and F. Shadi Shahedipour-Sandvik. "III-Nitride Heterostructure Layered Tunnel Barriers For a Tunable Hyperspectral Detector." IEEE Sensors Journal 8, no. 6 (June 2008): 724–29. http://dx.doi.org/10.1109/jsen.2008.923180.
Повний текст джерелаAldalbahi, Ali, Rafael Velázquez, Andrew F. Zhou, Mostafizur Rahaman, and Peter X. Feng. "Bandgap-Tuned 2D Boron Nitride/Tungsten Nitride Nanocomposites for Development of High-Performance Deep Ultraviolet Selective Photodetectors." Nanomaterials 10, no. 8 (July 23, 2020): 1433. http://dx.doi.org/10.3390/nano10081433.
Повний текст джерелаKhan, Asif, and Krishnan Balakrishnan. "Present Status of Deep UV Nitride Light Emitters." Materials Science Forum 590 (August 2008): 141–74. http://dx.doi.org/10.4028/www.scientific.net/msf.590.141.
Повний текст джерелаWieben, Jens, Carsten Beckmann, Hady Yacoub, Andrei Vescan, and Holger Kalisch. "Development of a III-nitride electro-optical modulator for UV–vis." Japanese Journal of Applied Physics 58, SC (April 17, 2019): SCCC04. http://dx.doi.org/10.7567/1347-4065/ab079e.
Повний текст джерелаAkasaki, Isamu, and Hiroshi Amano. "Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices." Journal of The Electrochemical Society 141, no. 8 (August 1, 1994): 2266–71. http://dx.doi.org/10.1149/1.2055104.
Повний текст джерелаBouzid, F., and F. Pezzimenti. "Influence of the thickness of frontal platinum metallic layer on the electro-optical characteristics of GaN-based Schottky ultraviolet photodetectors." Semiconductor Physics, Quantum Electronics and Optoelectronics 25, no. 3 (October 6, 2022): 323–30. http://dx.doi.org/10.15407/spqeo25.03.323.
Повний текст джерелаTripathi, N., L. D. Bell, and F. Shahedipour-Sandvik. "AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization." Journal of Applied Physics 109, no. 12 (June 15, 2011): 124508. http://dx.doi.org/10.1063/1.3599878.
Повний текст джерелаSong, Yu, Rajaram Bhat, Tzu-Yung Huang, Pranav Badami, Chung-En Zah, and Claire Gmachl. "III-nitride quantum cascade detector grown by metal organic chemical vapor deposition." Applied Physics Letters 105, no. 18 (November 3, 2014): 182104. http://dx.doi.org/10.1063/1.4901220.
Повний текст джерелаFan, Zelong, Zuoyan Qin, Zhenhua Sun, and Honglei Wu. "Broad Spectrum Detector Based on AlN Crystal." Journal of Physics: Conference Series 2350, no. 1 (September 1, 2022): 012013. http://dx.doi.org/10.1088/1742-6596/2350/1/012013.
Повний текст джерелаGu, Wen, Yi Lu, Rongyu Lin, Wenzhe Guo, Zihui Zhang, Jae-Hyun Ryou, Jianchang Yan, Junxi Wang, Jinmin Li, and Xiaohang Li. "BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer." Journal of Physics D: Applied Physics 54, no. 17 (February 12, 2021): 175104. http://dx.doi.org/10.1088/1361-6463/abdefc.
Повний текст джерелаCiers, Joachim, Gwénolé Jacopin, Gordon Callsen, Catherine Bougerol, Jean-François Carlin, Raphaël Butté, and Nicolas Grandjean. "Near-UV narrow bandwidth optical gain in lattice-matched III–nitride waveguides." Japanese Journal of Applied Physics 57, no. 9 (July 30, 2018): 090305. http://dx.doi.org/10.7567/jjap.57.090305.
Повний текст джерелаRen, Bin, Hui Guo, Feng Shi, Hong-Chang Cheng, Hui Liu, Jian Liu, Zhi-Hui Shen, Yan-Li Shi, and Pei Liu. "A theoretical and experimental evaluation of III–nitride solar-blind UV photocathode." Chinese Physics B 26, no. 8 (August 2017): 088504. http://dx.doi.org/10.1088/1674-1056/26/8/088504.
Повний текст джерелаKneissl, M., T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, et al. "Advances in group III-nitride-based deep UV light-emitting diode technology." Semiconductor Science and Technology 26, no. 1 (December 15, 2010): 014036. http://dx.doi.org/10.1088/0268-1242/26/1/014036.
Повний текст джерелаFu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 34 (October 9, 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.
Повний текст джерелаSajjad, Muhammad, Wojciech M. Jadwisienczak, and Peter Feng. "Nanoscale structure study of boron nitride nanosheets and development of a deep-UV photo-detector." Nanoscale 6, no. 9 (2014): 4577–82. http://dx.doi.org/10.1039/c3nr05817d.
Повний текст джерелаKleindienst, R., P. Becker, V. Cimalla, A. Grewe, P. Hille, M. Krüger, J. Schörmann, et al. "Integration of an opto-chemical detector based on group III-nitride nanowire heterostructures." Applied Optics 54, no. 4 (January 28, 2015): 839. http://dx.doi.org/10.1364/ao.54.000839.
Повний текст джерелаWang, Mengjun, Jinpeng Li, Zichun Fan, Shining Wu, Juanjuan Ma, Xiaobo Zhang, Lin Liu, and Zhiwei Tong. "A nanocomposite constructed by intercalating iron porphyrin into layered tantalotungstate with exfoliation/self-assembly method utilized for electrocatalytic oxidation of nitrite." Functional Materials Letters 12, no. 05 (September 17, 2019): 1950069. http://dx.doi.org/10.1142/s1793604719500693.
Повний текст джерелаAKASAKI, I., and H. AMANO. "ChemInform Abstract: Widegap Group-III Nitride Semiconductors for UV/Blue Light Emitting Devices." ChemInform 25, no. 48 (August 18, 2010): no. http://dx.doi.org/10.1002/chin.199448267.
Повний текст джерелаSajjad, Muhammad, Wojciech M. Jadwisienczak, and Peter Feng. "Correction: Nanoscale structure study of boron nitride nanosheets and development of a deep-UV photo-detector." Nanoscale 6, no. 24 (2014): 15346. http://dx.doi.org/10.1039/c4nr90099e.
Повний текст джерелаRömer, Friedhard, Martin Guttmann, Tim Wernicke, Michael Kneissl, and Bernd Witzigmann. "Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes." Materials 14, no. 24 (December 20, 2021): 7890. http://dx.doi.org/10.3390/ma14247890.
Повний текст джерелаNg, H. M., and T. D. Moustakas. "High reflectance III-Nitride Bragg reflectors grown by molecular beam epitaxy." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 28–34. http://dx.doi.org/10.1557/s109257830000404x.
Повний текст джерелаFranke, A., M. P. Hoffmann, R. Kirste, M. Bobea, J. Tweedie, F. Kaess, M. Gerhold, R. Collazo, and Z. Sitar. "High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers." Journal of Applied Physics 120, no. 13 (October 7, 2016): 135703. http://dx.doi.org/10.1063/1.4963831.
Повний текст джерелаTao, Tao, Ting Zhi, Bin Liu, Peng Chen, Zili Xie, Hong Zhao, Fangfang Ren, Dunjun Chen, Youdou Zheng, and Rong Zhang. "Electron‐Beam‐Driven III‐Nitride Plasmonic Nanolasers in the Deep‐UV and Visible Region." Small 16, no. 1 (December 3, 2019): 1906205. http://dx.doi.org/10.1002/smll.201906205.
Повний текст джерелаHossain, Sharif, Christopher W. K. Chow, Guna A. Hewa, David Cook, and Martin Harris. "Spectrophotometric Online Detection of Drinking Water Disinfectant: A Machine Learning Approach." Sensors 20, no. 22 (November 21, 2020): 6671. http://dx.doi.org/10.3390/s20226671.
Повний текст джерелаLu, Zheng Qian, Yi Pu Qu, Mussaab I. Niass, Muhammad Nawaz Sharif, Yu Huai Liu, and Fang Wang. "Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals." Materials Science Forum 954 (May 2019): 3–8. http://dx.doi.org/10.4028/www.scientific.net/msf.954.3.
Повний текст джерелаJadhav, Aakash, Pegah Bagheri, Andrew Klump, Dolar Khachariya, Seiji Mita, Pramod Reddy, Shashwat Rathkanthiwar, et al. "On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters." Semiconductor Science and Technology 37, no. 1 (November 26, 2021): 015003. http://dx.doi.org/10.1088/1361-6641/ac3710.
Повний текст джерелаHow Kee Chun, L. S., J. L. Courant, A. Falcou, P. Ossart, and G. Post. "UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation." Microelectronic Engineering 36, no. 1-4 (June 1997): 69–72. http://dx.doi.org/10.1016/s0167-9317(97)00017-8.
Повний текст джерелаLiang, Banglong, Zili Wang, Cheng Qian, Yi Ren, Bo Sun, Dezhen Yang, Zhou Jing, and Jiajie Fan. "Investigation of Step-Stress Accelerated Degradation Test Strategy for Ultraviolet Light Emitting Diodes." Materials 12, no. 19 (September 25, 2019): 3119. http://dx.doi.org/10.3390/ma12193119.
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