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Статті в журналах з теми "III Nitride UV Detector"
Mitra, Somak, Mufasila Mumthaz Muhammed, Norah Alwadai, Dhaifallah R. Almalawi, Bin Xin, Yusin Pak, and Iman S. Roqan. "Optimized performance III-nitride-perovskite-based heterojunction photodetector via asymmetric electrode configuration." RSC Advances 10, no. 10 (2020): 6092–97. http://dx.doi.org/10.1039/c9ra08823g.
Повний текст джерелаNikzad, Shouleh, Michael Hoenk, April Jewell, John Hennessy, Alexander Carver, Todd Jones, Timothy Goodsall, et al. "Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials." Sensors 16, no. 6 (June 21, 2016): 927. http://dx.doi.org/10.3390/s16060927.
Повний текст джерелаMohammad, S. N., W. Kim, A. Salvador, and H. Morkoç. "Reactive Molecular-Beam Epitaxy for Wurtzite GaN." MRS Bulletin 22, no. 2 (February 1997): 22–28. http://dx.doi.org/10.1557/s0883769400032528.
Повний текст джерелаChang, P. C., K. H. Lee, S. J. Chang, Y. K. Su, T. C. Lin, and S. L. Wu. "III-Nitride Schottky Rectifiers With an AlGaN/GaN/AlGaN/GaN Quadruple Layer and Their Applications to UV Detection." IEEE Sensors Journal 10, no. 4 (April 2010): 799–804. http://dx.doi.org/10.1109/jsen.2009.2034626.
Повний текст джерелаKuball, M., M. Benyoucef, F. H. Morrissey, and C. T. Foxon. "Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 950–56. http://dx.doi.org/10.1557/s1092578300005317.
Повний текст джерелаLi, Yu Bo, Jian Wei Zhong, Li Ming Zhou, Chao Lun Sun, Xiao Wang, Hang Sheng Yang, and William Milne. "Deep Ultraviolet Photodetector Based on Sulphur-Doped Cubic Boron Nitride Thin Film." Materials Science Forum 879 (November 2016): 1117–22. http://dx.doi.org/10.4028/www.scientific.net/msf.879.1117.
Повний текст джерелаWang, Lian Jia, You Zhang Zhu, Hong Xia Wang, Ben Li Liu, and Jin She Yuan. "Cathodeluminescence Characterization of AlGaN Film Grown by MOCVD." Advanced Materials Research 143-144 (October 2010): 966–70. http://dx.doi.org/10.4028/www.scientific.net/amr.143-144.966.
Повний текст джерелаAlamoudi, Hadeel, Bin Xin, Somak Mitra, Mohamed N. Hedhili, Singaravelu Venkatesh, Dhaifallah Almalawi, Norah Alwadai, Zohoor Alharbi, Ahmad Subahi, and Iman S. Roqan. "Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure." Applied Physics Letters 120, no. 12 (March 21, 2022): 122102. http://dx.doi.org/10.1063/5.0083259.
Повний текст джерелаChatterjee, Abhijit, Shashidhara Acharya, and S. M. Shivaprasad. "Morphology-Related Functionality in Nanoarchitectured GaN." Annual Review of Materials Research 50, no. 1 (July 1, 2020): 179–206. http://dx.doi.org/10.1146/annurev-matsci-081919-014810.
Повний текст джерелаMuñoz, E., E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart. "III nitrides and UV detection." Journal of Physics: Condensed Matter 13, no. 32 (July 26, 2001): 7115–37. http://dx.doi.org/10.1088/0953-8984/13/32/316.
Повний текст джерелаДисертації з теми "III Nitride UV Detector"
Chang, Shin-Hui, and 張欣會. "Characterization study of III-nitride based metal-semiconductor-metal UV detectors." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/26378681107565782848.
Повний текст джерела中原大學
電子工程研究所
96
In this thesis, III-nitride materials, GaN and AlN, which uniquely present at the same time, the excellent electronic and optoelectronic properties, were employed to fabricate the metal-semiconductor-metal (MSM) photodetectors for UV detection. The native oxide on GaN surface was removed by HCl before the metallization of Al electrodes for MSM devices. The dark current of the GaN MSM photodetector is 100pA at 20V. The ideal factor and Schottky barrier height derived from the dark current are 1.0147 and 0.794eV, respectively. The finger width and space of the interdigital electrodes were varied in order to improve the device performance. The responsivity of the p-type GaN MSM device is 0.0113A/W at 10V when illuminated by He-Cd laser with the power of 1.99mW. It is as good as that of the p-type GaN MSM in the literature. In addition, the photo current increases linearly with the illuminating power, indicating that the GaN MSM devices are suitable for UV light detection. AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.
Hsu, Chen-Wei, and 徐振瑋. "Fabrication study of novel UV detector using III-Nitrides thin films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/70722592946271223780.
Повний текст джерела中原大學
電子工程研究所
96
Recently, the demands of UV detectors for the military, industry and scientific needs have become more and more extensive. The required sensitivity of UV detectors depends on the various applications. UV detectors are traditionally made of photomultiplier tubes (PMTs) and the Si photodiodes. Although PMTs have the highest accuracy, the high price and the fragility prevent it from being widely used for UV sensing. Silicon photodiode is used for its lower cost, but the small band gap results in the inefficiency for UV sensors. The III-Nitrides are suitable for UV sensors application because they possess superior piezoelectricity and wide bandgap as well as radiative attack、low dark current and high responsivity. In this thesis, novel UV detectors were fabricated using III-Nitrides based on AlN/GaN/Sapphire and GaN/Sapphire. The detectors combine a surface acoustic wave (SAW) device and metal-semiconductor-metal (MSM) device. The detectors can be remotely controlled by using RF signals of SAW, and also have the feasibility to distinguish the wavelength range of the incident light through the different bandgaps of AlN and GaN. The results of illuminating experiments demonstrated the possibility of combining two devices to form the new type of UV detectors. The experimental data also revealed that the output frequency shift of the SAW oscillator and the photocurrent of the MSM are both linearly dependent on the radiation power. It indicates the potential to obtain sensitive and accurate UV detectors using this novel III- nitride devices.
Chen, Tzu-Chieh, and 陳子傑. "Fabricaion study of UV detectors using the opto-electrical and acoustic characteristics of III-nitride thin films." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/47687199427713093513.
Повний текст джерела中原大學
電子工程研究所
95
In this thesis, III-nitride materials, AlN and GaN, which uniquely present at the same time the excellent electronic, optoelectronic and acoustic properties, were employed to fabricate MSM photodetectors & SAW oscillators for UV detection. The dark current of Al/p-GaN MSM photodetector is 10.1pA at 20V, the photoresponsivity is 0.1A/W at 5V, the UV/visible ratio is approximately 2.5 orders, and minimum detectable power is probably 10nW. AlN MSM photodetectors were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire using helicon sputtering system at the low temperature of 300°C. The dark current of the device is 670fA at 20V and photo current illuminated by D2 lamp is higher by one order. The characteristics of SAW devices on AlN/GaN/Sapphire and GaN/Sapphire and the characteristic frequency responded to the UV illumination were explored. Superior SAW properties in terms of insertion loss and sidelobe rejection have been obtained for the SAW devices made on AlN/GaN/Sapphire, compared to those of the ones made on GaN/sapphire. With the deposition AlN on GaN/Sapphire, it can help ease off the fabrication difficulties of SAW oscillators. The illumination effect on the SAW oscillators has been investigated. It showed a linear relationship between the radiation power and the frequency shift of oscillation for GaN/Sapphire and AlN/GaN/Sapphire SAW oscillators, indicating the feasibility for UV sensors. Finally, I have proposed a novel idea of UV detectors that combines the III–Nitrides SAW and MSM devices. The devices not only have the potential to measure optical power more accurately, but also have feasibility of tailoring the UV absorption edge of wavelength. The patent of this invention is pending now.
Lin, Chung-Yi, and 林忠毅. "Fabrication study of III-Nitride based SAW oscillators and the applications for UV sensors." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/23675493410988057281.
Повний текст джерела中原大學
電子工程研究所
95
High compactness、sensitivity、durability、stability and low power are critical requirements for superior ultraviolet (UV) detectors in the applications of science、chemistry、industry and military, such as space-to-space communication、ozone layer monitoring、missile warning、air pollution detection、flame detection、UV astronomy、medical industry、semiconductor fabrication (lithography) monitoring . In addition to be used in modern communication, the surface acoustic wave (SAW) devices are attractive for highly sensitive and wireless controlled sensors. In the region of UV detectors, nitride-based materials which possess superior piezoelectricity and wide bandgap are suitable to be UV sensors because of their low radiative attack、low dark current and high responsivity. In this thesis, layered structure SAW devices have been prepared on GaN/Sapphire and AlN/GaN/Sapphire. The design and fabrication of the SAW oscillators operating in 165MHz range for UV sensors are described. The stability test of oscillation frequency was less than 2kHz of variation. When SAW oscillators were illuminated by UV light, the oscillation frequency was shifted because of the variation of phase and velocity of the SAW devices, which were caused by the photo-induced conductivity in the piezoelectric layer of SAW devices. The oscillator frequency shift increased with illuminating UV power intensity, indicating that the SAW oscillators made of nitride-based materials were suitable for UV detection.
Shetty, Arjun. "Device Applications of Epitaxial III-Nitride Semiconductors." Thesis, 2015. http://etd.iisc.ernet.in/2005/3530.
Повний текст джерелаКниги з теми "III Nitride UV Detector"
Zhou, Shengjun, and Sheng Liu. III-Nitride LEDs: From UV to Green. Springer Singapore Pte. Limited, 2022.
Знайти повний текст джерелаЧастини книг з теми "III Nitride UV Detector"
Gaska, R., M. Asif Khan, and M. S. Shur. "III-Nitride Based UV Light Emiting Diodes." In UV Solid-State Light Emitters and Detectors, 59–75. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_5.
Повний текст джерелаGutmann, Emmanuel, Florian Erfurth, Anke Drewitz, Armin Scheibe, and Martina C. Meinke. "UV Fluorescence Detection and Spectroscopy in Chemistry and Life Sciences." In III-Nitride Ultraviolet Emitters, 351–86. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_13.
Повний текст джерелаČiplys, D., A. Sereika, R. Rimeika, R. Gaska, M. Shur, J. Yang, and M. Asif Khan. "III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors." In UV Solid-State Light Emitters and Detectors, 239–46. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_19.
Повний текст джерелаYang, Wei. "AlGaN UV Photodetectors." In III-V Nitride Semiconductors, 675–91. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-14.
Повний текст джерелаMonroy, E., F. Calle, E. Muñoz, and F. Omnès. "III-Nitride-Based UV Photodetectors." In III-V Nitride Semiconductors, 525–91. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-12.
Повний текст джерелаJuršėnas, S., G. Kurilčik, S. Miasojedovas, and A. Žukauskas. "Materials Characterization of Group-III Nitrides under High-Power Photoexcitation." In UV Solid-State Light Emitters and Detectors, 207–14. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_15.
Повний текст джерелаDegner, Martin, and Hartmut Ewald. "UV Emitters in Gas Sensing Applications." In III-Nitride Ultraviolet Emitters, 321–49. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_12.
Повний текст джерелаDreyer, Christian, and Franziska Mildner. "Application of LEDs for UV-Curing." In III-Nitride Ultraviolet Emitters, 415–34. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_15.
Повний текст джерелаWollina, Uwe, Bernd Seme, Armin Scheibe, and Emmanuel Gutmann. "Application of UV Emitters in Dermatological Phototherapy." In III-Nitride Ultraviolet Emitters, 293–319. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_11.
Повний текст джерелаSchreiner, Monika, Inga Mewis, Susanne Neugart, Rita Zrenner, Johannes Glaab, Melanie Wiesner, and Marcel A. K. Jansen. "UV-B Elicitation of Secondary Plant Metabolites." In III-Nitride Ultraviolet Emitters, 387–414. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_14.
Повний текст джерелаТези доповідей конференцій з теми "III Nitride UV Detector"
Dupuis, Russell D., Theeradetch Detchprohm, Hi-Hee Ji, Marzieh Bakhtiary-Noodeh, Hoon Jeong, Ping Chen, Shyh-Chiang Shen, Chuan-Wei Tsou, Karan Mehta, and P. Douglas Yoder. "III-nitride emitters and detectors for UV optoelectronic applications grown by metalorganic chemical vapor deposition." In UV and Higher Energy Photonics: From Materials to Applications 2019, edited by Gilles Lérondel, Yong-Hoon Cho, Satoshi Kawata, and Atsushi Taguchi. SPIE, 2019. http://dx.doi.org/10.1117/12.2540048.
Повний текст джерелаWang, Qin, Susan Savage, Sirpa Persson, Bertrand Noharet, Stéphane Junique, Jan Y. Andersson, Vytautas Liuolia, and Saulius Marcinkevicius. "Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection." In SPIE OPTO: Integrated Optoelectronic Devices, edited by Hadis Morkoç, Cole W. Litton, Jen-Inn Chyi, Yasushi Nanishi, Joachim Piprek, and Euijoon Yoon. SPIE, 2009. http://dx.doi.org/10.1117/12.808469.
Повний текст джерелаShatalov, M., J. Yang, Yu Bilenko, M. Shur, and R. Gaska. "High Power III-Nitride UV Emitters." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/cleo_at.2011.jtud1.
Повний текст джерелаWang, George T. "III-Nitride nanowires for UV-visible optoelectronics." In 2015 IEEE Photonics Society Summer Topical Meeting Series (SUM). IEEE, 2015. http://dx.doi.org/10.1109/phosst.2015.7248230.
Повний текст джерелаKhan, Asif. "III-Nitride UV Emitters and Their Applications." In Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 2010. http://dx.doi.org/10.1364/cleo.2010.ctucc1.
Повний текст джерелаGaska, Remis. "III-Nitride Based Deep UV LEDs and Applications." In International Quantum Electronics Conference. Washington, D.C.: OSA, 2009. http://dx.doi.org/10.1364/iqec.2009.ptua1.
Повний текст джерелаGaska, Remis. "III-Nitride Based Deep UV LEDs and Applications." In Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 2009. http://dx.doi.org/10.1364/cleo.2009.ptua1.
Повний текст джерелаXiao-Hang Li, Theeradetch Detchprohm, Russell D. Dupuis, Tsung-Ting Kao, Shyh-Chiang Shen, Md Mahbub Satter, P. Douglas Yoder, et al. "III-nitride deep UV laser on sapphire substrate." In 2015 IEEE Photonics Conference (IPC). IEEE, 2015. http://dx.doi.org/10.1109/ipcon.2015.7323746.
Повний текст джерелаSarkar, Biplab, Pramod Reddy, Andrew Klump, Robert Rounds, Mathew R. Breckenridge, Brian B. Haidet, Seiji Mita, Ronny Kirste, Ramon Collazo, and Zlatko Sitar. "On contacts to III-nitride deep-UV emitters." In 2018 3rd International Conference on Microwave and Photonics (ICMAP). IEEE, 2018. http://dx.doi.org/10.1109/icmap.2018.8354575.
Повний текст джерелаShakya, Jagat B., Kyoung Hoon Kim, Tom N. Oder, Jing Yu Lin, and Hong Xing Jiang. "III-nitride blue and UV photonic-crystal light-emitting diodes." In Optical Science and Technology, the SPIE 49th Annual Meeting, edited by Ian T. Ferguson, Nadarajah Narendran, Steven P. DenBaars, and John C. Carrano. SPIE, 2004. http://dx.doi.org/10.1117/12.565632.
Повний текст джерелаЗвіти організацій з теми "III Nitride UV Detector"
Moustakas, Theodore D. III-Nitride UV Detector Arrays Fabricated by Combining HVPE Lateral Epitaxial Overgrowth and MBE Methods. Fort Belvoir, VA: Defense Technical Information Center, May 2002. http://dx.doi.org/10.21236/ada403567.
Повний текст джерелаJiang, Hongxing, and Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, March 2002. http://dx.doi.org/10.21236/ada399578.
Повний текст джерелаJiang, Hongxing, and Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, August 2001. http://dx.doi.org/10.21236/ada390015.
Повний текст джерелаJiang, Hongxing, and Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, July 2001. http://dx.doi.org/10.21236/ada390174.
Повний текст джерела