Статті в журналах з теми "III-Nitride Materials"
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Pampili, Pietro, and Peter J. Parbrook. "Doping of III-nitride materials." Materials Science in Semiconductor Processing 62 (May 2017): 180–91. http://dx.doi.org/10.1016/j.mssp.2016.11.006.
Повний текст джерелаWu, Kefeng, Siyu Huang, Wenliang Wang, and Guoqiang Li. "Recent progress in III-nitride nanosheets: properties, materials and applications." Semiconductor Science and Technology 36, no. 12 (October 27, 2021): 123002. http://dx.doi.org/10.1088/1361-6641/ac2c26.
Повний текст джерелаHardy, Matthew T., Daniel F. Feezell, Steven P. DenBaars, and Shuji Nakamura. "Group III-nitride lasers: a materials perspective." Materials Today 14, no. 9 (September 2011): 408–15. http://dx.doi.org/10.1016/s1369-7021(11)70185-7.
Повний текст джерелаHite, Jennifer. "Progress in periodically oriented III-nitride materials." Journal of Crystal Growth 456 (December 2016): 133–36. http://dx.doi.org/10.1016/j.jcrysgro.2016.08.042.
Повний текст джерелаMonemar, B., P. P. Paskov, J. P. Bergman, A. A. Toropov, and T. V. Shubina. "Recent developments in the III-nitride materials." physica status solidi (b) 244, no. 6 (June 2007): 1759–68. http://dx.doi.org/10.1002/pssb.200674836.
Повний текст джерелаHangleiter, Andreas. "III–V Nitrides: A New Age for Optoelectronics." MRS Bulletin 28, no. 5 (May 2003): 350–53. http://dx.doi.org/10.1557/mrs2003.99.
Повний текст джерелаMoram, M. A., and S. Zhang. "ScGaN and ScAlN: emerging nitride materials." J. Mater. Chem. A 2, no. 17 (2014): 6042–50. http://dx.doi.org/10.1039/c3ta14189f.
Повний текст джерелаBen, Jianwei, Xinke Liu, Cong Wang, Yupeng Zhang, Zhiming Shi, Yuping Jia, Shanli Zhang, et al. "2D III‐Nitride Materials: Properties, Growth, and Applications." Advanced Materials 33, no. 27 (May 28, 2021): 2006761. http://dx.doi.org/10.1002/adma.202006761.
Повний текст джерелаSpeck, J. S., and S. F. Chichibu. "Nonpolar and Semipolar Group III Nitride-Based Materials." MRS Bulletin 34, no. 5 (May 2009): 304–12. http://dx.doi.org/10.1557/mrs2009.91.
Повний текст джерелаDobrinsky, A., G. Simin, R. Gaska, and M. Shur. "III-Nitride Materials and Devices for Power Electronics." ECS Transactions 58, no. 4 (August 31, 2013): 129–43. http://dx.doi.org/10.1149/05804.0129ecst.
Повний текст джерелаSha, Wei, Jicai Zhang, Shuxin Tan, Xiangdong Luo, and Weiguo Hu. "III-nitride piezotronic/piezo-phototronic materials and devices." Journal of Physics D: Applied Physics 52, no. 21 (March 18, 2019): 213003. http://dx.doi.org/10.1088/1361-6463/ab04d6.
Повний текст джерелаKarpov, Sergey Yu. "Spontaneous polarization in III-nitride materials: crystallographic revision." physica status solidi (c) 7, no. 7-8 (May 14, 2010): 1841–43. http://dx.doi.org/10.1002/pssc.200983414.
Повний текст джерелаFeigelson, B. N., R. M. Frazier, and M. Twigg. "III-Nitride crystal growth from nitride-salt solution." Journal of Crystal Growth 305, no. 2 (July 2007): 399–402. http://dx.doi.org/10.1016/j.jcrysgro.2007.03.028.
Повний текст джерелаMendes, Marco, Jeffrey Sercel, Mathew Hannon, Cristian Porneala, Xiangyang Song, Jie Fu, and Rouzbeh Sarrafi. "Advanced Laser Scribing for Emerging LED Materials." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (January 1, 2011): 001443–71. http://dx.doi.org/10.4071/2011dpc-wa32.
Повний текст джерелаGuisbiers, Grégory, Di Liu, Qing Jiang, and Lionel Buchaillot. "Theoretical predictions of wurtzite III-nitride nano-materials properties." Physical Chemistry Chemical Physics 12, no. 26 (2010): 7203. http://dx.doi.org/10.1039/c002496a.
Повний текст джерелаAcharya, Ananta R. "Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications." Himalayan Physics 5 (June 29, 2015): 22–26. http://dx.doi.org/10.3126/hj.v5i0.12818.
Повний текст джерелаBaten, Md Zunaid, Shamiul Alam, Bejoy Sikder, and Ahmedullah Aziz. "III-Nitride Light-Emitting Devices." Photonics 8, no. 10 (October 7, 2021): 430. http://dx.doi.org/10.3390/photonics8100430.
Повний текст джерелаYe, Chao, and Qing Peng. "Mechanical Stabilities and Properties of Graphene-like 2D III-Nitrides: A Review." Crystals 13, no. 1 (December 22, 2022): 12. http://dx.doi.org/10.3390/cryst13010012.
Повний текст джерелаIida, Daisuke, and Kazuhiro Ohkawa. "Recent progress in red light-emitting diodes by III-nitride materials." Semiconductor Science and Technology 37, no. 1 (November 26, 2021): 013001. http://dx.doi.org/10.1088/1361-6641/ac3962.
Повний текст джерелаDing, Yimin, Kui Xue, Jing Zhang, Luo Yan, Qiaoqiao Li, Yisen Yao, and Liujiang Zhou. "Two-Dimensional Octuple-Atomic-Layer M2Si2N4 (M = Al, Ga and In) with Long Carrier Lifetime." Micromachines 14, no. 2 (February 8, 2023): 405. http://dx.doi.org/10.3390/mi14020405.
Повний текст джерелаJustice, J., A. Kadiyala, J. Dawson, and D. Korakakis. "Group III-Nitride Based Electronic and Optoelectronic Integrated Circuits for Smart Lighting Applications." MRS Proceedings 1492 (2013): 123–28. http://dx.doi.org/10.1557/opl.2013.369.
Повний текст джерелаRezaei, B., A. Asgari, and M. Kalafi. "Electronic band structure pseudopotential calculation of wurtzite III-nitride materials." Physica B: Condensed Matter 371, no. 1 (January 2006): 107–11. http://dx.doi.org/10.1016/j.physb.2005.10.003.
Повний текст джерелаNakamura, Shuji. "First laser diodes fabricated from III–V nitride based materials." Materials Science and Engineering: B 43, no. 1-3 (January 1997): 258–64. http://dx.doi.org/10.1016/s0921-5107(96)01850-8.
Повний текст джерелаNakamura, Shuji. "Future Technologies and Applications of III-Nitride Materials and Devices." Engineering 1, no. 2 (June 2015): 161. http://dx.doi.org/10.15302/j-eng-2015059.
Повний текст джерелаRodriguez, B. J., A. Gruverman, A. I. Kingon, and R. J. Nemanich. "Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials." Journal of Crystal Growth 246, no. 3-4 (December 2002): 252–58. http://dx.doi.org/10.1016/s0022-0248(02)01749-9.
Повний текст джерелаMuthuraj, Vineeta R., Caroline E. Reilly, Thomas Mates, Shuji Nakamura, Steven P. DenBaars, and Stacia Keller. "Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition." Applied Physics Letters 122, no. 14 (April 3, 2023): 142103. http://dx.doi.org/10.1063/5.0142941.
Повний текст джерелаRen, C. X., T. J. Puchtler, T. Zhu, J. T. Griffiths, and R. A. Oliver. "Defects in III-nitride microdisk cavities." Semiconductor Science and Technology 32, no. 3 (February 14, 2017): 033002. http://dx.doi.org/10.1088/1361-6641/32/3/033002.
Повний текст джерелаZhao, Degang. "III-nitride based ultraviolet laser diodes." Journal of Semiconductors 40, no. 12 (December 2019): 120402. http://dx.doi.org/10.1088/1674-4926/40/12/120402.
Повний текст джерелаWang, Yongjin, Tong Wu, Takuma Tanae, Hongbo Zhu, and Kazuhiro Hane. "The resonant III-nitride grating reflector." Journal of Micromechanics and Microengineering 21, no. 10 (September 21, 2011): 105025. http://dx.doi.org/10.1088/0960-1317/21/10/105025.
Повний текст джерелаRömer, Friedhard, Martin Guttmann, Tim Wernicke, Michael Kneissl, and Bernd Witzigmann. "Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes." Materials 14, no. 24 (December 20, 2021): 7890. http://dx.doi.org/10.3390/ma14247890.
Повний текст джерелаAdekore, B. T., K. Rakes, B. Wang, M. J. Callahan, S. Pendurti, and Z. Sitar. "Ammonothermal synthesis of aluminum nitride crystals on group III-nitride templates." Journal of Electronic Materials 35, no. 5 (May 2006): 1104–11. http://dx.doi.org/10.1007/bf02692573.
Повний текст джерелаYakovlev, E. V., R. A. Talalaev, A. S. Segal, A. V. Lobanova, W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. F. Tsatsulnikov, and A. E. Nikolaev. "Hydrogen effects in III-nitride MOVPE." Journal of Crystal Growth 310, no. 23 (November 2008): 4862–66. http://dx.doi.org/10.1016/j.jcrysgro.2008.07.099.
Повний текст джерелаJiang, H. X., and J. Y. Lin. "III-Nitride Quantum Devices—Microphotonics." Critical Reviews in Solid State and Materials Sciences 28, no. 2 (April 2003): 131–83. http://dx.doi.org/10.1080/10408430390802440.
Повний текст джерелаWang, Buguo, and Michael J. Callahan. "Ammonothermal Synthesis of III-Nitride Crystals." Crystal Growth & Design 6, no. 6 (June 2006): 1227–46. http://dx.doi.org/10.1021/cg050271r.
Повний текст джерелаWu, J., W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff. "Narrow bandgap group III-nitride alloys." physica status solidi (b) 240, no. 2 (November 2003): 412–16. http://dx.doi.org/10.1002/pssb.200303475.
Повний текст джерелаShreter, Y. G., Y. T. Rebane, and W. N. Wang. "III-Nitride Unipolar Light Emitting Devices." physica status solidi (a) 180, no. 1 (July 2000): 307–13. http://dx.doi.org/10.1002/1521-396x(200007)180:1<307::aid-pssa307>3.0.co;2-z.
Повний текст джерелаNavarro-Quezada, Andrea. "Magnetic Nanostructures Embedded in III-Nitrides: Assembly and Performance." Crystals 10, no. 5 (May 1, 2020): 359. http://dx.doi.org/10.3390/cryst10050359.
Повний текст джерелаLiu, Xianhe, Faqrul A. Chowdhury, Srinivas Vanka, Sheng Chu, and Zetian Mi. "Emerging Applications of III‐Nitride Nanocrystals." physica status solidi (a) 217, no. 7 (February 25, 2020): 1900885. http://dx.doi.org/10.1002/pssa.201900885.
Повний текст джерелаKhokhlev, Oleg V., Kirill A. Bulashevich, and Sergey Yu Karpov. "Polarization doping for III-nitride optoelectronics." physica status solidi (a) 210, no. 7 (March 18, 2013): 1369–76. http://dx.doi.org/10.1002/pssa.201228614.
Повний текст джерелаFu, C., Y. He, C. Yang, J. He, L. Sun, K. Du, X. Zhang, et al. "Investigation of Adsorption of Nd(III) on Boron Nitride Nanosheets in Water." Nature Environment and Pollution Technology 22, no. 2 (June 1, 2023): 991–96. http://dx.doi.org/10.46488/nept.2023.v22i02.044.
Повний текст джерелаJamal-Eddine, Zane, Yuewei Zhang, and Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.
Повний текст джерелаAnderson, T. J., K. D. Hobart, M. J. Tadjer, A. D. Koehler, E. A. Imhoff, J. K. Hite, T. I. Feygelson, B. B. Pate, C. R. Eddy, and F. J. Kub. "Nanocrystalline Diamond Integration with III-Nitride HEMTs." ECS Journal of Solid State Science and Technology 6, no. 2 (October 13, 2016): Q3036—Q3039. http://dx.doi.org/10.1149/2.0071702jss.
Повний текст джерелаSnyder, Patrick J., Ronny Kirste, Ramon Collazo, and Albena Ivanisevic. "Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior." RSC Advances 6, no. 100 (2016): 97873–81. http://dx.doi.org/10.1039/c6ra21936e.
Повний текст джерелаZavada, J. M. "Revisiting Impurity Doping of III-Nitride Materials for Photonic Device Applications." ECS Transactions 50, no. 6 (March 15, 2013): 253–59. http://dx.doi.org/10.1149/05006.0253ecst.
Повний текст джерелаChen, Fei, Xiaohong Ji, and Shu Ping Lau. "Recent progress in group III-nitride nanostructures: From materials to applications." Materials Science and Engineering: R: Reports 142 (October 2020): 100578. http://dx.doi.org/10.1016/j.mser.2020.100578.
Повний текст джерелаWang, George T., Qiming Li, Jianyu Huang, Jonathan Wierer, Andrew Armstrong, Yong Lin, Prashanth Upadhya, and Rohit Prasankumar. "(Invited) III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications." ECS Transactions 35, no. 6 (December 16, 2019): 3–11. http://dx.doi.org/10.1149/1.3570840.
Повний текст джерелаRazeghi, Manijeh, Alireza Yasan, Ryan McClintock, Kathryn Mayes, Derek Shiell, Shaban Ramezani Darvish, and Patrick Kung. "Review of III-nitride optoelectronic materials for light emission and detection." physica status solidi (c) 1, S2 (August 2004): S141—S148. http://dx.doi.org/10.1002/pssc.200405133.
Повний текст джерелаSin, Yongkun, Stephen LaLumondiere, Nathan Wells, Zachary Lingley, Nathan Presser, William Lotshaw, Steven C. Moss, et al. "Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells." MRS Proceedings 1635 (2014): 55–62. http://dx.doi.org/10.1557/opl.2014.370.
Повний текст джерелаDauelsberg, Martin, and Roman Talalaev. "Progress in Modeling of III-Nitride MOVPE." Progress in Crystal Growth and Characterization of Materials 66, no. 3 (August 2020): 100486. http://dx.doi.org/10.1016/j.pcrysgrow.2020.100486.
Повний текст джерелаEisele, Holger, and Philipp Ebert. "Non-polar group-III nitride semiconductor surfaces." physica status solidi (RRL) - Rapid Research Letters 6, no. 9-10 (September 7, 2012): 359–69. http://dx.doi.org/10.1002/pssr.201206309.
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