Статті в журналах: "III-Nitride Materials"

1

Pampili, Pietro, and Peter J. Parbrook. "Doping of III-nitride materials." Materials Science in Semiconductor Processing 62 (May 2017): 180–91. http://dx.doi.org/10.1016/j.mssp.2016.11.006.

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2

Wu, Kefeng, Siyu Huang, Wenliang Wang, and Guoqiang Li. "Recent progress in III-nitride nanosheets: properties, materials and applications." Semiconductor Science and Technology 36, no. 12 (October 27, 2021): 123002. http://dx.doi.org/10.1088/1361-6641/ac2c26.

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Abstract As compared with their bulk materials, III-nitride nanosheets, including gallium nitride, aluminium nitride, indium nitride, reveal wider bandgap, enhanced optical properties, anomalously temperature-dependent thermal conductivity, etc, which are more suitable for the fabrication of nano-photodetectors, nano-field electron transistors, etc, for the application in the fields of nano-optoelectronics and nano-electronics. Although the properties of III-nitrides have been predicted based on the first-principles calculation, the experimental realization of III-nitride nanosheets has been restricted primarily due to dangling bonds on the surface and strong built-in electrostatic field caused by wurtzite/zinc-blende structures. To tackle these issues, several effective approaches have been introduced, and the distinct progress has been achieved during the past decade. In this review, the simulation and prediction of properties of III-nitride nanosheets are outlined, and the corresponding solutions and novel developed techniques for realisation of III-nitride nanosheets and defect control are discussed in depth. Furthermore, the corresponding devices based on the as-grown III-nitride nanosheets are introduced accordingly. Moreover, perspectives toward the further development of III-nitrides nanosheets and devices are also discussed.

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3

Hardy, Matthew T., Daniel F. Feezell, Steven P. DenBaars, and Shuji Nakamura. "Group III-nitride lasers: a materials perspective." Materials Today 14, no. 9 (September 2011): 408–15. http://dx.doi.org/10.1016/s1369-7021(11)70185-7.

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4

Hite, Jennifer. "Progress in periodically oriented III-nitride materials." Journal of Crystal Growth 456 (December 2016): 133–36. http://dx.doi.org/10.1016/j.jcrysgro.2016.08.042.

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5

Monemar, B., P. P. Paskov, J. P. Bergman, A. A. Toropov, and T. V. Shubina. "Recent developments in the III-nitride materials." physica status solidi (b) 244, no. 6 (June 2007): 1759–68. http://dx.doi.org/10.1002/pssb.200674836.

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6

Hangleiter, Andreas. "III–V Nitrides: A New Age for Optoelectronics." MRS Bulletin 28, no. 5 (May 2003): 350–53. http://dx.doi.org/10.1557/mrs2003.99.

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AbstractWith the advent of bright-blue light-emitting diodes in 1994, violet laser diodes in 1996, and vertical-cavity surface-emitting lasers at telecommunications wavelengths in 2000, all based on nitride-containing III–V compounds, a new age for optoelectronics began. Despite their technological success, III-nitride materials still hold some mysteries. Compared with conventional III–V semiconductors, even commercial nitride devices are of poor material quality. Due to their heteroepitaxial origin, their crystals are full of dislocations. Electrical properties, particularly in the case of p-type material, are fairly unsatisfactory. Still, light-emitting diodes with extremely high brightness and lasers with high power and good lifetime can be produced with III–V nitride compounds. In this review, we will give an overview of the essential properties of nitride materials for optoelectronic devices, their current development status, open questions, and recent device achievements.

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7

Moram, M. A., and S. Zhang. "ScGaN and ScAlN: emerging nitride materials." J. Mater. Chem. A 2, no. 17 (2014): 6042–50. http://dx.doi.org/10.1039/c3ta14189f.

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ScAlN and ScGaN alloys are wide band-gap semiconductors which can greatly expand the options for band gap and polarisation engineering required for efficient III-nitride optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.

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8

Ben, Jianwei, Xinke Liu, Cong Wang, Yupeng Zhang, Zhiming Shi, Yuping Jia, Shanli Zhang, et al. "2D III‐Nitride Materials: Properties, Growth, and Applications." Advanced Materials 33, no. 27 (May 28, 2021): 2006761. http://dx.doi.org/10.1002/adma.202006761.

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9

Speck, J. S., and S. F. Chichibu. "Nonpolar and Semipolar Group III Nitride-Based Materials." MRS Bulletin 34, no. 5 (May 2009): 304–12. http://dx.doi.org/10.1557/mrs2009.91.

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AbstractGaN and its alloys with InN and AlN are materials systems that have enabled the revolution in solid-state lighting and high-power/high-frequency electronics. GaN-based materials naturally form in a hexagonal wurtzite structure and are naturally grown in a (0001) c-axis orientation. Because the wurtzite structure is polar, GaN-based heterostructures have large internal electric fields due to discontinuities in spontaneous and piezoelectric polarization. For optoelectronic devices, such as light-emitting diodes and laser diodes, the internal electric field is generally deleterious as it causes a spatial separation of electron and hole wave functions in the quantum wells, which, in turn, likely decreases efficiency. Growth of GaN-based heterostructures in alternative orientations, which have reduced (semipolar orientations) or no polarization (nonpolar) in the growth direction, has been a major area of research in recent years. This issue highlights many of the key developments in nonpolar and semipolar nitride materials and devices.

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10

Dobrinsky, A., G. Simin, R. Gaska, and M. Shur. "III-Nitride Materials and Devices for Power Electronics." ECS Transactions 58, no. 4 (August 31, 2013): 129–43. http://dx.doi.org/10.1149/05804.0129ecst.

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11

Sha, Wei, Jicai Zhang, Shuxin Tan, Xiangdong Luo, and Weiguo Hu. "III-nitride piezotronic/piezo-phototronic materials and devices." Journal of Physics D: Applied Physics 52, no. 21 (March 18, 2019): 213003. http://dx.doi.org/10.1088/1361-6463/ab04d6.

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12

Karpov, Sergey Yu. "Spontaneous polarization in III-nitride materials: crystallographic revision." physica status solidi (c) 7, no. 7-8 (May 14, 2010): 1841–43. http://dx.doi.org/10.1002/pssc.200983414.

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13

Feigelson, B. N., R. M. Frazier, and M. Twigg. "III-Nitride crystal growth from nitride-salt solution." Journal of Crystal Growth 305, no. 2 (July 2007): 399–402. http://dx.doi.org/10.1016/j.jcrysgro.2007.03.028.

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14

Mendes, Marco, Jeffrey Sercel, Mathew Hannon, Cristian Porneala, Xiangyang Song, Jie Fu, and Rouzbeh Sarrafi. "Advanced Laser Scribing for Emerging LED Materials." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (January 1, 2011): 001443–71. http://dx.doi.org/10.4071/2011dpc-wa32.

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Lasers are becoming increasingly important in today's LED revolution and are essential for increasing the efficiency and reducing manufacturing cost of LEDs. Diode pumped solid state lasers excel in scribing horizontal type LEDs on sapphire, silicon, silicon carbide, III-nitrides (gallium nitride and aluminum nitride), as well as III-V semiconductors (gallium arsenide, gallium phosphide). These lasers are also used for dicing vertical type LEDs, which are becoming increasingly more important, often using high thermal conductivity metallic substrates such as copper, CuW and molybdenum. In this paper we will discuss some of the recent laser scribing/dicing techniques and how adequate selection of laser parameters and beam delivery optics allows for a high quality high throughput singulation process for the various materials listed above.

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15

Guisbiers, Grégory, Di Liu, Qing Jiang, and Lionel Buchaillot. "Theoretical predictions of wurtzite III-nitride nano-materials properties." Physical Chemistry Chemical Physics 12, no. 26 (2010): 7203. http://dx.doi.org/10.1039/c002496a.

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16

Acharya, Ananta R. "Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications." Himalayan Physics 5 (June 29, 2015): 22–26. http://dx.doi.org/10.3126/hj.v5i0.12818.

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Over the past two decades, group III-nitride semiconductors have become the focus of extremely intensive research due to their unique physical properties and their high potential for use in numerous electronic and optoelectronic devices. To date, almost all aspects of these materials have been explored, from understanding the fundamental physical properties to the development of fabrication technology of highly efficient devices for commercial use. In this article, some of the important physical properties and applications of III-nitride semiconducting materials have been presented.The Himalayan Physics Year 5, Vol. 5, Kartik 2071 (Nov 2014)Page: 22-26

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17

Baten, Md Zunaid, Shamiul Alam, Bejoy Sikder, and Ahmedullah Aziz. "III-Nitride Light-Emitting Devices." Photonics 8, no. 10 (October 7, 2021): 430. http://dx.doi.org/10.3390/photonics8100430.

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III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

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18

Ye, Chao, and Qing Peng. "Mechanical Stabilities and Properties of Graphene-like 2D III-Nitrides: A Review." Crystals 13, no. 1 (December 22, 2022): 12. http://dx.doi.org/10.3390/cryst13010012.

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Mechanical stabilities and properties are critical in real applications of materials, as well as material and machine design. With the success of graphene, graphene-like materials arose tremendous interest in the past few years. Different from bulk materials, two-dimensional (2D) materials have prominent non-linear elastic behaviors. Here, we briefly review the mechanical stabilities and properties of graphene-like 2D III-nitrides, including boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), and thallium nitride (TlN). These nitrides are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. As a result, they play a central role in solid-state light-emitting devices. Their Young’s modulus, Poisson’s ratio, ultimate tensile strength, and elastic limits under various strains are extensively studied, as well as their high-order elastic constants and non-linear behaviors. These studies provide a guide for their practical applications and designs.

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19

Iida, Daisuke, and Kazuhiro Ohkawa. "Recent progress in red light-emitting diodes by III-nitride materials." Semiconductor Science and Technology 37, no. 1 (November 26, 2021): 013001. http://dx.doi.org/10.1088/1361-6641/ac3962.

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Abstract GaN-based light-emitting devices have the potential to realize all visible emissions with the same material system. These emitters are expected to be next-generation red, green, and blue displays and illumination tools. These emitting devices have been realized with highly efficient blue and green light-emitting diodes (LEDs) and laser diodes. Extending them to longer wavelength emissions remains challenging from an efficiency perspective. In the emerging research field of micro-LED displays, III-nitride red LEDs are in high demand to establish highly efficient devices like conventional blue and green systems. In this review, we describe fundamental issues in the development of red LEDs by III-nitrides. We also focus on the key role of growth techniques such as higher temperature growth, strain engineering, nanostructures, and Eu doping. The recent progress and prospect of developing III-nitride-based red light-emitting devices will be presented.

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20

Ding, Yimin, Kui Xue, Jing Zhang, Luo Yan, Qiaoqiao Li, Yisen Yao, and Liujiang Zhou. "Two-Dimensional Octuple-Atomic-Layer M2Si2N4 (M = Al, Ga and In) with Long Carrier Lifetime." Micromachines 14, no. 2 (February 8, 2023): 405. http://dx.doi.org/10.3390/mi14020405.

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Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material M2Si2N4 (M = Al, Ga and In) is predicted by choosing Si as the appropriate passivation element. The stability, electronic and optical properties of 2D M2Si2N4 materials are studied systematically based on first-principles calculations. The results show that Al2Si2N4 and Ga2Si2N4 are found to be indirect bandgap semiconductors, while In2Si2N4 is a direct bandgap semiconductor. Moreover, Al2Si2N4 and In2Si2N4 have good absorption ability in the visible light region, while Ga2Si2N4 is an ultraviolet-light-absorbing material. Furthermore, the carrier lifetimes of Ga2Si2N4 and In2Si2N4 are as large as 157.89 and 103.99 ns, respectively. All these desirable properties of M2Si2N4 materials make them attractive for applications in electronics and photoelectronics.

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21

Justice, J., A. Kadiyala, J. Dawson, and D. Korakakis. "Group III-Nitride Based Electronic and Optoelectronic Integrated Circuits for Smart Lighting Applications." MRS Proceedings 1492 (2013): 123–28. http://dx.doi.org/10.1557/opl.2013.369.

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ABSTRACTWith general lighting applications being responsible for over 20% of the energy consumption in the United States, advances in solid-state lighting have the potential for considerable energy and cost savings. The United States Department of Energy predicts that the increased use of solid state lighting will result in a 46% lighting consumption energy savings by the year 2030. Smart lighting systems have the potential for reducing energy costs while also providing a means for short distance data transmission via free space optics. The group III-nitride (III-N) family of materials, including aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), their binary and ternary alloys, are uniquely situated to provide light emitting diodes (LEDs) across the full visible spectrum, photodetectors (PDs) and high power, high speed transistors. In this work, aluminum gallium nitride (AlGaN) / GaN high electron mobility transistors (HEMTs) and indium gallium nitride (InGaN) photodiodes (PDs) are fabricated and characterized. HEMTs and LEDs (or PDs) are grown on the same substrate for the purpose of creating electronic and optoelectronic integrated circuits.

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22

Rezaei, B., A. Asgari, and M. Kalafi. "Electronic band structure pseudopotential calculation of wurtzite III-nitride materials." Physica B: Condensed Matter 371, no. 1 (January 2006): 107–11. http://dx.doi.org/10.1016/j.physb.2005.10.003.

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23

Nakamura, Shuji. "First laser diodes fabricated from III–V nitride based materials." Materials Science and Engineering: B 43, no. 1-3 (January 1997): 258–64. http://dx.doi.org/10.1016/s0921-5107(96)01850-8.

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24

Nakamura, Shuji. "Future Technologies and Applications of III-Nitride Materials and Devices." Engineering 1, no. 2 (June 2015): 161. http://dx.doi.org/10.15302/j-eng-2015059.

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25

Rodriguez, B. J., A. Gruverman, A. I. Kingon, and R. J. Nemanich. "Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials." Journal of Crystal Growth 246, no. 3-4 (December 2002): 252–58. http://dx.doi.org/10.1016/s0022-0248(02)01749-9.

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26

Muthuraj, Vineeta R., Caroline E. Reilly, Thomas Mates, Shuji Nakamura, Steven P. DenBaars, and Stacia Keller. "Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition." Applied Physics Letters 122, no. 14 (April 3, 2023): 142103. http://dx.doi.org/10.1063/5.0142941.

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The heterogeneous integration of III-nitride materials with other semiconductor systems for electronic devices is attractive because it combines the excellent electrical properties of the III-nitrides with other device platforms. Pursuing integration through metalorganic chemical vapor deposition (MOCVD) is desirable because of the scalability of the technique, but the high temperatures required for the MOCVD growth of III-nitrides (>1000 °C) are incompatible with direct heteroepitaxy on some semiconductor systems and fabricated wafers. Thus, the MOCVD growth temperature of III-nitride films must be lowered to combine them with other systems. In this work, 16 nm-thick Si:GaN films were grown by MOCVD at 550 °C using a flow modulation epitaxy scheme. By optimizing the disilane flow conditions, electron concentrations up to 5.9 × 1019 cm−3 were achieved, resulting in sheet resistances as low as 1070 Ω/□. Film mobilities ranged from 34 to 119 cm2 V−1 s−1. These results are promising for III-nitride integration and expand device design and process options for III-nitride-based electronic devices.

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27

Ren, C. X., T. J. Puchtler, T. Zhu, J. T. Griffiths, and R. A. Oliver. "Defects in III-nitride microdisk cavities." Semiconductor Science and Technology 32, no. 3 (February 14, 2017): 033002. http://dx.doi.org/10.1088/1361-6641/32/3/033002.

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28

Zhao, Degang. "III-nitride based ultraviolet laser diodes." Journal of Semiconductors 40, no. 12 (December 2019): 120402. http://dx.doi.org/10.1088/1674-4926/40/12/120402.

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29

Wang, Yongjin, Tong Wu, Takuma Tanae, Hongbo Zhu, and Kazuhiro Hane. "The resonant III-nitride grating reflector." Journal of Micromechanics and Microengineering 21, no. 10 (September 21, 2011): 105025. http://dx.doi.org/10.1088/0960-1317/21/10/105025.

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30

Römer, Friedhard, Martin Guttmann, Tim Wernicke, Michael Kneissl, and Bernd Witzigmann. "Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes." Materials 14, no. 24 (December 20, 2021): 7890. http://dx.doi.org/10.3390/ma14247890.

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In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) LEDs is still in progress. The polarisation in the anisotropic wurtzite lattice and the low free hole density in p-doped III-nitride compounds with high aluminium content make the design for high efficiency a critical step. The growth kinetics of the rather thin active quantum wells in III-nitride LEDs makes them prone to inhomogeneous broadening (IHB). Physical modelling of the active region of III-nitride LEDs supports the optimisation by revealing the opaque active region physics. In this work, we analyse the impact of the IHB on the luminescence and carrier transport III-nitride LEDs with multi-quantum well (MQW) active regions by numerical simulations comparing them to experimental results. The IHB is modelled with a statistical model that enables efficient and deterministic simulations. We analyse how the lumped electronic characteristics including the quantum efficiency and the diode ideality factor are related to the IHB and discuss how they can be used in the optimisation process.

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31

Adekore, B. T., K. Rakes, B. Wang, M. J. Callahan, S. Pendurti, and Z. Sitar. "Ammonothermal synthesis of aluminum nitride crystals on group III-nitride templates." Journal of Electronic Materials 35, no. 5 (May 2006): 1104–11. http://dx.doi.org/10.1007/bf02692573.

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32

Yakovlev, E. V., R. A. Talalaev, A. S. Segal, A. V. Lobanova, W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. F. Tsatsulnikov, and A. E. Nikolaev. "Hydrogen effects in III-nitride MOVPE." Journal of Crystal Growth 310, no. 23 (November 2008): 4862–66. http://dx.doi.org/10.1016/j.jcrysgro.2008.07.099.

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33

Jiang, H. X., and J. Y. Lin. "III-Nitride Quantum Devices—Microphotonics." Critical Reviews in Solid State and Materials Sciences 28, no. 2 (April 2003): 131–83. http://dx.doi.org/10.1080/10408430390802440.

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34

Wang, Buguo, and Michael J. Callahan. "Ammonothermal Synthesis of III-Nitride Crystals." Crystal Growth & Design 6, no. 6 (June 2006): 1227–46. http://dx.doi.org/10.1021/cg050271r.

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35

Wu, J., W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff. "Narrow bandgap group III-nitride alloys." physica status solidi (b) 240, no. 2 (November 2003): 412–16. http://dx.doi.org/10.1002/pssb.200303475.

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36

Shreter, Y. G., Y. T. Rebane, and W. N. Wang. "III-Nitride Unipolar Light Emitting Devices." physica status solidi (a) 180, no. 1 (July 2000): 307–13. http://dx.doi.org/10.1002/1521-396x(200007)180:1<307::aid-pssa307>3.0.co;2-z.

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37

Navarro-Quezada, Andrea. "Magnetic Nanostructures Embedded in III-Nitrides: Assembly and Performance." Crystals 10, no. 5 (May 1, 2020): 359. http://dx.doi.org/10.3390/cryst10050359.

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III-Nitride semiconductors are the materials of choice for state-of-the-art opto-electronic and high-power electronic applications. Through the incorporation of magnetic ions, like transition metals and rare-earths, III-Nitrides have further extended their applicability to spintronic devices. However, in most III-Nitrides the low solubility of the magnetic ions leads to the formation of secondary phases that are often responsible for the observed magnetic behavior of the layers. The present review summarizes the research dedicated to the understanding of the basic properties, from the fabrication to the performance, of III-Nitride-based phase-separated magnetic systems containing embedded magnetic nanostructures as suitable candidates for spintronics applications.

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38

Liu, Xianhe, Faqrul A. Chowdhury, Srinivas Vanka, Sheng Chu, and Zetian Mi. "Emerging Applications of III‐Nitride Nanocrystals." physica status solidi (a) 217, no. 7 (February 25, 2020): 1900885. http://dx.doi.org/10.1002/pssa.201900885.

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39

Khokhlev, Oleg V., Kirill A. Bulashevich, and Sergey Yu Karpov. "Polarization doping for III-nitride optoelectronics." physica status solidi (a) 210, no. 7 (March 18, 2013): 1369–76. http://dx.doi.org/10.1002/pssa.201228614.

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40

Fu, C., Y. He, C. Yang, J. He, L. Sun, K. Du, X. Zhang, et al. "Investigation of Adsorption of Nd(III) on Boron Nitride Nanosheets in Water." Nature Environment and Pollution Technology 22, no. 2 (June 1, 2023): 991–96. http://dx.doi.org/10.46488/nept.2023.v22i02.044.

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In this paper, boron nitride materials were prepared by a two-step synthesis method, and this material’s adsorption property for neodymium ions was explored. The experimental results show that the adsorption capacity of boron nitride is closely related to pH. When the pH is 6.0, the adsorption performance of the material is the best; the kinetic data show that the adsorption equilibrium can be reached in about 150 min, and the adsorption capacity at equilibrium is 207.3 mg.g-1. In addition, the Freundlich and Langmuir models were used to fitting the thermodynamic results. It was found that the adsorption process of boron nitride on Nd(III) involved both monolayer adsorption and multi-layer adsorption. These data indicate that boron nitride has a good adsorption effect on Nd(III) in water and is a promising material for environmental remediation.

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41

Jamal-Eddine, Zane, Yuewei Zhang, and Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.

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Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.

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42

Anderson, T. J., K. D. Hobart, M. J. Tadjer, A. D. Koehler, E. A. Imhoff, J. K. Hite, T. I. Feygelson, B. B. Pate, C. R. Eddy, and F. J. Kub. "Nanocrystalline Diamond Integration with III-Nitride HEMTs." ECS Journal of Solid State Science and Technology 6, no. 2 (October 13, 2016): Q3036—Q3039. http://dx.doi.org/10.1149/2.0071702jss.

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43

Snyder, Patrick J., Ronny Kirste, Ramon Collazo, and Albena Ivanisevic. "Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior." RSC Advances 6, no. 100 (2016): 97873–81. http://dx.doi.org/10.1039/c6ra21936e.

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Zavada, J. M. "Revisiting Impurity Doping of III-Nitride Materials for Photonic Device Applications." ECS Transactions 50, no. 6 (March 15, 2013): 253–59. http://dx.doi.org/10.1149/05006.0253ecst.

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45

Chen, Fei, Xiaohong Ji, and Shu Ping Lau. "Recent progress in group III-nitride nanostructures: From materials to applications." Materials Science and Engineering: R: Reports 142 (October 2020): 100578. http://dx.doi.org/10.1016/j.mser.2020.100578.

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46

Wang, George T., Qiming Li, Jianyu Huang, Jonathan Wierer, Andrew Armstrong, Yong Lin, Prashanth Upadhya, and Rohit Prasankumar. "(Invited) III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications." ECS Transactions 35, no. 6 (December 16, 2019): 3–11. http://dx.doi.org/10.1149/1.3570840.

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47

Razeghi, Manijeh, Alireza Yasan, Ryan McClintock, Kathryn Mayes, Derek Shiell, Shaban Ramezani Darvish, and Patrick Kung. "Review of III-nitride optoelectronic materials for light emission and detection." physica status solidi (c) 1, S2 (August 2004): S141—S148. http://dx.doi.org/10.1002/pssc.200405133.

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48

Sin, Yongkun, Stephen LaLumondiere, Nathan Wells, Zachary Lingley, Nathan Presser, William Lotshaw, Steven C. Moss, et al. "Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells." MRS Proceedings 1635 (2014): 55–62. http://dx.doi.org/10.1557/opl.2014.370.

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ABSTRACTHigh performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials [1]. In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.

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Dauelsberg, Martin, and Roman Talalaev. "Progress in Modeling of III-Nitride MOVPE." Progress in Crystal Growth and Characterization of Materials 66, no. 3 (August 2020): 100486. http://dx.doi.org/10.1016/j.pcrysgrow.2020.100486.

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Eisele, Holger, and Philipp Ebert. "Non-polar group-III nitride semiconductor surfaces." physica status solidi (RRL) - Rapid Research Letters 6, no. 9-10 (September 7, 2012): 359–69. http://dx.doi.org/10.1002/pssr.201206309.

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