Дисертації з теми "III-Nitride Materials"
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Kumaresan, Vishnuvarthan. "Novel substrates for growth of III-Nitride materials." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066538/document.
Повний текст джерелаA major advantage of semiconductor nanowires (NWs) is the possibility to integrate these nano-materials on various substrates. This perspective is particularly attractive for III-nitrides, for which there is a lack of an ideal substrate. We examined the use of novel templates for growing GaN NWs by plasma assisted molecular beam epitaxy. We explored three approaches with a common feature: the base support is a cost-efficient amorphous substrate and a thin crystalline material is deposited on the support to promote epitaxial growth of GaN NWs.In the first approach, we formed polycrystalline Si thin films on amorphous support by a process called aluminum-induced crystallization (AIC-Si). The conditions of this process were optimized to get a strong [111] fiber-texture of the Si film which enabled us to grow vertically oriented GaN NWs. The same idea was implemented with graphene as an ultimately thin crystalline material transferred on SiOx. We illustrated for the first time in literature that GaN NWs and the graphene layer have a single relative in-plane orientation. We propose a plausible epitaxial relationship and demonstrate that the number of graphene layers has a strong impact on GaN nucleation. Proof-of-concept for selective area growth of NWs is provided for these two approaches. As a simple approach, the possibility of growing NWs directly on amorphous substrates was explored. We use thermal silica and fused silica. Self-induced GaN NWs were formed with a good verticality on both substrates. Based on our observations, we conclude that the epitaxial growth of GaN NWs on graphene looks particularly promising for the development of flexible devices
Kim, Kyounghoon. "Growth and characterization of III-nitride photonic materials /." Search for this dissertation online, 2004. http://wwwlib.umi.com/cr/ksu/main.
Повний текст джерелаRen, Christopher Xiang. "Multi-microscopy characterisation of III-nitride devices and materials." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/264158.
Повний текст джерелаZhang, Hengfang. "Hot-wall MOCVD of N-polar group-III nitride materials." Licentiate thesis, Linköpings universitet, Halvledarmaterial, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-175502.
Повний текст джерелаAdditional funding agencies: Chalmers University of technology; ABB; Ericsson; Epiluvac; FMV; Gotmic; Saab; SweGaN; UMS; Swedish Foundation for Strategic Research under Grants No. FL12-0181, No. RIF14-055, and No. EM16-0024; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University, Faculty Grant SFO Mat LiU No.2009- 00971.
West, Allen M. "Effects of dislocations on electronic properties of III-nitride materials." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009281.
Повний текст джерелаBao, An. "Investigation on the properties of nanowire structures and hillocks of Group-III nitride materials." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/276187.
Повний текст джерелаEiting, Christopher James. "Growth of III-V nitride materials by MOCVD for device applications /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Повний текст джерелаCrawford, Samuel Curtis. "Synthesis of III-V nitride nanowires with controlled structure, morphology, and composition." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/88370.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 173-182).
The III-V nitride materials system offers tunable electronic and optical properties that can be tailored for specific electronic and optoelectronic applications by varying the (In,Ga,Al)N alloy composition. While nitride thin films tend to suffer from high dislocation densities due to the lattice mismatch with growth substrates, nanowires can be grown dislocation-free on highly mismatched substrates including silicon. Furthermore, axial and radial junction configurations offer unique nanoscale device architectures that enable more optimal device design. In order to realize the potential benefits of III-V nitride nanowires, precise control of nanowire synthesis is required. This thesis describes the development of experimental techniques and theoretical models that guide the synthesis of Ill-V nitride and other compound semiconductor nanowires with control over material structure, morphology, and composition. First, GaN nanowires were synthesized with control over nanowire orientation, morphology, and defect density. Substrate orientation was used to control whether nanowires grew preferentially in the polar [0001] direction or the nonpolar [1-100] direction. Film deposition on the nanowire sidewalls was effectively minimized by reducing the Ga precursor flux and internanowire spacing. Using nonpolar-oriented GaN nanowires with uniform diameter, the diameter-dependent growth rate was modeled to demonstrate that growth is limited by nucleation at the perimeter of the seed/nanowire interface. Finally, Ni- and Au-seeded GaN nanowires were directly compared, and the higher growth rate and reduced defect density in Ni-seeded nanowires were consistent with a reduced seed/nanowire interfacial energy. Next, nonpolar-oriented InN/InGaN axial heterostructure nanowires were grown by introducing Ga precursors during InN nanowire growth. The formation of GaN shells placed an upper limit on the allowable Ga precursor flux. Shell deposition was minimized by operating at higher temperature and pressure. However, a reduction in the local supply of Ga to the seed particle also limited InGaN formation. Therefore, brief high-flux pulses were used at lower pressure to form InN/InGaN axial heterostructures with minimal shell formation. Electron tomography and energy dispersive X-ray spectroscopy were used to analyze the Ga-driven driven changes in nanowire morphology and composition, respectively. The reduction in nanowire diameter upon the introduction of Ga was found to be driven by changes in seed particle composition. A flow-controlled approach was developed to modulate the diameter along individual nanowires, which can enable unique properties including enhanced light trapping in nanowire arrays and increased phonon scattering in thermoelectrics. In InN nanowires, a reduction in V flow produced segments with larger diameters and slower growth rates. A reduction in III flow in GaN nanowires also produced segments with slower growth rates, but thinner diameters. These trends are a consequence of the separate pathways traveled by the III and V sources to the site of reaction, enabling control over the incorporation rate of III source into the seed particle and the extraction rate of III source out of the seed particle, respectively. Based on these promising results, models were developed to explore the potential for template-free nanowire diameter modulation via particle-mediated growth. The results from diameter-modulated InN and GaN nanowires were evaluated considering contributions of seed particle volume, wetting angle, and three-dimensional morphology to the observed diameter changes. To achieve large diameter ratios using liquid seed particles, significant changes in both seed particle volume and wetting angle are necessary. Furthermore, the model was used to evaluate the surface energy and morphology of the liquid/solid interface. The interface was found to not be flat, contrary to common assumptions, which has significant implications for nanowire growth models. Finally, we extended the flow-controlled diameter modulation approach to GaAs nanowires, demonstrating that the technique is generally applicable to particle-mediated compound semiconductor nanowires. Both the III and V sources were varied during growth, producing similar trends in diameter and growth rate as with III-V nitride nanowires. Notably, three different types of [111]B-oriented nanowires were observed and had discrete differences in diameter modulation, growth rate, and cross-sectional shape, which were attributed to differences in seed particle phase. By controlling growth conditions during nanowire nucleation, each of the three types of nanowires were preferentially produced, indicating that the seed particle phase can be controllably varied in compound-forming seed alloys. Together, these results provide a foundation for fabricating III-V nitride and other nanowires with control over material structure, morphology, and composition. Experimental techniques and theoretical models were developed that enable control over growth direction, tapering, growth rate, defect density, composition, and diameter. These tools are helpful in achieving nanowires with rationally tailored properties for functional nanowire-based devices.
by Samuel Curtis Crawford.
Ph. D.
Nguyen, Hieu. "Molecular beam epitaxial growth, characterization and device applications of III-Nitride nanowire heterostructures." Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=107905.
Повний текст джерелаRécemment, les hétérostructures à base de nitride et de groupe III ont fait l'objet de recherches intensives. Grâce à la relaxation latérale effective du stress, de telles hétérostructures d'échelle nanométrique peuvent être déposés sur du Silicium ou d'autres substrats. Celles-ci démontrent une réduction dramatique des dislocations et des champs de polarisations comparativement à leurs contreparties planes. Cette dissertation rapporte l'accomplissement d'une nouvelle classe de matériau nanométrique, soit des hétérostructures III-nitride incluant InGaN/GaN point dans fils ainsi que des nanofils d'InN presque sans défauts sur du Silicium. De plus, nous avons développé une nouvelle génération de dispositifs à base de nanofils, incluant des diodes émettrices de lumière (LEDs) à efficacité ultra haute et spectre visible complet ainsi que des cellules solaires sur une gaufre de Silicium. Nous avons identifié 2 mécanismes majeurs, incluant le faible transport des trous et le surplus d'électrons, qui limitent sérieusement la performance des LEDs à base de nanofils de GaN. Avec l'ajout de certaines techniques spéciales de modulation de type p, et une couche bloquante d'électrons faite de AlGaN dans la région active de la LED point dans fil. Par ailleurs, nous avons démontré des LEDs blanche sans phosphore qui démontrent, pour la première fois, une efficacité quantique supérieure à 50% ainsi qu'une baisse d'efficacité négligeable jusqu'à ~ 2,000A/cm2 et des caractéristiques d'émissions très hautes et stables à température pièce. Celles-ci sont donc toutes désignées pour des applications d'illumination intelligentes et des écrans pleines couleurs. La croissance par épitaxie, la fabrication et la caractérisation des nanofils d'InN:Mg/i-InN/InN:Si axiaux sur des substrats de Si(111) de type n et démontré la première cellule solaire à base d'InN. Sous l'illumination d'un soleil (AM 1.5G), les dispositifs démontrent une densité de courant de ~ 14.4 mA/cm2 en court-circuit, un voltage de circuit ouvert de 0.14V, un facteur de remplissage de 34.0% et une efficacité de conversion d'énergie de 0.68%. Ce travail ouvre des portes excitantes pour des cellules solaires plein spectre de troisième génération à base de nanofils d'InGaN.
Eriksson, Martin. "Photoluminescence Characteristics of III-Nitride Quantum Dots and Films." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-139766.
Повний текст джерелаWang, Jingzhou. "Optical and Electrical Study of the Rare Earth Doped III-nitride Semiconductor Materials." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1478177382556951.
Повний текст джерелаKent, Thomas Frederick. "III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1408564155.
Повний текст джерелаSarwar, ATM Golam. "Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1451358029.
Повний текст джерелаGong, Yipin. "MOCVD growth and optical investigation of III-nitride materials including non-polar and semi-polar GaN." Thesis, University of Sheffield, 2014. http://etheses.whiterose.ac.uk/4991/.
Повний текст джерелаDomènech, i. Amador Núria. "Phonons in III-nitride thinfilms, bulk and nanowires: a closer look into InN vibrational properties". Doctoral thesis, Universitat de Barcelona, 2015. http://hdl.handle.net/10803/348867.
Повний текст джерелаAquesta tesi està dedicada a l’estudi de les interaccions dels fonons en nitrur d'indi (InN) i en semiconductors del sistema (In.Ga)N amb estructura wurtzita. Amb aquest objectiu es presenten estudis d'espectroscòpia Raman en capes primes, nanofils (NWs), i mostres bulk, que han permès abordar de manera global les interaccions dels fonons en aquests materials. Hem estudiat les interaccions anharmòniques i els canals de decaïment dels fonons de InN, tant en capes primes com en NWs. La dependència de l’amplada del pic Raman amb la temperatura de tots els modes fonònics s’ha estudiat utilitzant un model anharmònic que considera la contribució dels processos de tres i quatre fonons, i tenint en compte la densitat d'estats de fonons obtinguda mitjançant càlculs ab-initio. L'anàlisi dels temps de vida fonònics i de la dependència amb temperatura de les freqüències permet afirmar que els NWs tenen una estructura més relaxada que les capes primes. També hem estudiat el decaïment anharmònic de modes locals de vibració corresponents a complexos d'H en InN fortament dopat amb Mg. Hem estudiat les ressonàncies en el sistema (In,Ga)N i la influència de la densitat d’impureses en l’eficiència dels mecanismes ressonants. Hem demostrat que la dispersió Raman de modes òptics longitudinals en el InN es produeix a través de la doble ressonància del Martin tant en capes primer com en nanoestructures, tot i que la densitat de defectes d'aquestes últimes és significativament menor. Hem estudiat també el mecanisme de cascada mediat per impureses, a través del qual es produeix la dispersió de multifonons, en capes primes de InGaN amb diferent composició i diferent grau d’implantació d'ions d'He, i hem comprovat que les intensitats relatives dels multifonons depenen de la concentració d’indi i de la dosi de la implantació. Finalment, hem estudiat l’acoblament de fonons polars amb els plasmons mitjançant el model dielèctric de Lindhard-Mermin, amb la finalitat d’investigar la densitat d’electrons lliures utilitzant espectroscòpia Raman. Hem determinat la concentració d'electrons en NWs de InN sense dopar, dopats amb Si i dopats amb Mg. També hem fet un estudi de la distribució de la densitat de càrrega en una mostra de GaN ammonotermal mitjançant mesures de micro-Raman confocal.
Choi, Suk. "Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45823.
Повний текст джерелаNamkoong, Gon. "Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications : impact of nucleation kinetics on material and device structure quality." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/16426.
Повний текст джерелаJackson, Christine M. "Correlations of Electronic Interface States and Interface Chemistry on Dielectric/III Nitride Heterostructures for Device Applications." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu15257361319909.
Повний текст джерелаCarnevale, Santino D. "Catalyst-free III-nitride Nanowires by Plasma-assisted Molecular Beam Epitaxy: Growth, Characterization, and Applications." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1374066626.
Повний текст джерелаAntunez, de Mayolo Eduardo. "Study of the Optical Properties of sp2-Hybridized Boron Nitride." Thesis, Linköpings universitet, Tillämpad optik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-125738.
Повний текст джерелаMay, Brelon J. "Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-Nitride Nanowire Ultraviolet Light Emitting Diodes." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1546385850422501.
Повний текст джерелаVenkatachalam, Anusha. "Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29669.
Повний текст джерелаCommittee Chair: Yoder, Douglas; Committee Member: Graham, Samuel; Committee Member: Allen, Janet; Committee Member: Klein, Benjamin; Committee Member: Voss, Paul. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Reitmeier, Zachary J. "The Chemistry and Surface Microstructure of Si-Based Substrates and their Effect on the Evolution of the Microstructures of III-Nitride Films Grown via Metalorganic Vapor Phase Epitaxy." NCSU, 2005. http://www.lib.ncsu.edu/theses/available/etd-03202005-194018/.
Повний текст джерелаOlsson, Kevin. "Optimization of gas flow uniformity in enhancement of Metal Organic Chemical Vapor Deposition growth for III-nitrides." Thesis, Linköpings universitet, Halvledarmaterial, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-157378.
Повний текст джерелаYoung, Craig Alexander. "Fabrication of photonic microstructures in group III nitride material." Thesis, University of Glasgow, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.249984.
Повний текст джерелаSerban, Alexandra. "Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-141595.
Повний текст джерелаTrybus, Elaissa Lee. "Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28108.
Повний текст джерелаCommittee Chair: Doolittle, W. Alan; Committee Member: Ferguson, Ian; Committee Member: Graham, Samuel; Committee Member: Rohatgi, Ajeet; Committee Member: Shen, Shyh-Chiang.
Miller, Eric Justin. "Influence of material properties on device design and performance in III-V nitride alloys /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2003. http://wwwlib.umi.com/cr/ucsd/fullcit?p3091322.
Повний текст джерелаYoo, Dongwon. "Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16220.
Повний текст джерелаRennesson, Stéphanie. "Développement de nouvelles hétérostructures HEMTs à base de nitrure de gallium pour des applications de puissance en gamme d'ondes millimétriques." Phd thesis, Université Nice Sophia Antipolis, 2013. http://tel.archives-ouvertes.fr/tel-00943619.
Повний текст джерелаHoffman, Timothy B. "Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method." Diss., Kansas State University, 2016. http://hdl.handle.net/2097/32797.
Повний текст джерелаDepartment of Chemical Engineering
James H. Edgar
Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and the advent of graphene and other 2-D materials. For device applications, high quality, low defect density materials are needed. Several applications for hBN crystals are being investigated, including as a neutron detector and interference-less infrared-absorbing material. Isotopically enriched crystals were utilized for enhanced propagation of phonon modes. These applications exploit the unique physical, electronic and nanophotonics applications for bulk hBN crystals. In this study, bulk hBN crystals were grown by the flux method using a molten Ni-Cr solvent at high temperatures (1500°C) and atmospheric pressures. The effects of growth parameters, source materials, and gas environment on the crystals size, morphology and purity were established and controlled, and the reliability of the process was greatly improved. Single-crystal domains exceeding 1mm in width and 200μm in thickness were produced and transferred to handle substrates for analysis. Grain size dependence with respect to dwell temperature, cooling rate and cooling temperature were analyzed and modeled using response surface morphology. Most significantly, crystal grain width was predicted to increase linearly with dwell temperature, with single-crystal domains exceeding 2mm in at 1700°C. Isotopically enriched ¹⁰B and ¹¹B hBN crystal were produced using a Ni-Cr-B flux method, and their properties investigated. ¹⁰B concentration was evaluated using SIMS and correlated to the shift in the Raman peak of the E[subscript 2g] mode. Crystals with enrichment of 99% ¹⁰B and >99% ¹¹B were achieved, with corresponding Raman shift peaks at 1392.0 cm⁻¹ and 1356.6 cm⁻¹, respectively. Peak FWHM also decreased as isotopic enrichment approached 100%, with widths as low as 3.5 cm⁻¹ achieved, compared to 8.0 cm⁻¹ for natural abundance samples. Defect selective etching was performed using a molten NaOH-KOH etchant at 425°C-525°C, to quantify the quality of the crystals. Three etch pit shapes were identified and etch pit width was investigated as a function of temperature. Etch pit density and etch pit activation energy was estimated at 5×10⁷ cm⁻² and 60 kJ/mol, respectively. Screw and mixed-type dislocations were identified using diffraction-contrast TEM imaging.
Lochner, Zachary M. "Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/49032.
Повний текст джерелаJessen, Gregg Huascar. "Investigation and Characterization of AlGaN/GaN Device Structures and the Effects of Material Defects and Processing on Device Performance." Connect to this title online, 2002. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1038605384.
Повний текст джерелаTitle from first page of PDF file. Document formatted into pages; contains xxx,198 p.: ill. (some col.). Includes abstract and vita. Advisor: Leonard J. Brillson, Dept. of Electrical Engineering. Includes bibliographical references (p. 188-198).
Briere, Gauthier. "Réalisation de méta-optiques à base de matériaux semi-conducteurs III-V pour des applications dans le visible." Thesis, Université Côte d'Azur (ComUE), 2019. http://www.theses.fr/2019AZUR4075.
Повний текст джерелаIn the past years, new optical components have appeared. These components, known as "meta-optics" or "metasurfaces", made it possible to control and to shape the wavefront of the light. This allows the control of any incident beam and the creation of conventional optical functionalities, such as focusing or deflecting the light, or functionalities with additional features such as the possibility of creating polarization-dependent meta-holograms. Indeed, thanks to the periodic arrangement of resonators with sub-wavelength geometric dimensions, it is possible to obtain an arbitrary local control of the incident beam. Nevertheless, even though many applications have been demonstrated in the community, only a few materials are found to be compatible for the industrial development of these components. In addition, in order to pass from passive to active components for the fabrication of dynamic devices, it is necessary to switch from dielectric materials to semiconductor materials. For these reasons, we are interested in the use of a semiconductor material, Gallium Nitride, for the development of metasurface components. We first present a numerical study of the nanostructures used during this work. Then, we show how the design of our meta-optics is done by presenting the numerical conception method and nanofabrication processes used, which includes a new etching technique compatible only with crystalline materials while preserving their optical properties. Finally, we suggest different applications where our components can be used, such as: the development of metalenses with high numerical aperture and large surface; the optimization of metasurface high contrast gratings allowing to reach diffraction efficiencies higher than 80%; or the fabrication of meta-holograms preserving the information of the orbital angular momentum of the incident beam
"Polarization Effects in Group III-Nitride Materials and Devices." Doctoral diss., 2012. http://hdl.handle.net/2286/R.I.14643.
Повний текст джерелаDissertation/Thesis
Ph.D. Physics 2012
Solanke, Swanand Vishnu. "Integration of Layered Materials with Group-III Nitride Semiconductors for Dual Band Photodetection." Thesis, 2019. https://etd.iisc.ac.in/handle/2005/4441.
Повний текст джерела"Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors." Doctoral diss., 2011. http://hdl.handle.net/2286/R.I.9035.
Повний текст джерелаDissertation/Thesis
Ph.D. Physics 2011
"Growth of III-nitride nano-materials by chemical vapor deposition." 2006. http://library.cuhk.edu.hk/record=b5892788.
Повний текст джерелаThesis (M.Phil.)--Chinese University of Hong Kong, 2006.
Includes bibliographical references.
Text in English; abstracts in English and Chinese.
Hong Liang = Yong hua xue qi xiang dian ji fang fa sheng chang dan hua wu na mi cai liao / Hong Liang.
Acknowledgements --- p.ii
Abstract --- p.iii
Contents --- p.v
Chapter Chapter 1 --- Introduction
Chapter 1.1 --- Background --- p.1
Chapter 1.2 --- Motivation --- p.2
Chapter 1.2.1 --- A1N and AlGaN nanowires --- p.2
Chapter 1.2.2 --- CVD --- p.3
Chapter 1.3 --- Our work --- p.3
Chapter Chapter 2 --- Experiment --- p.7
Chapter 2.1 --- CVD system --- p.7
Chapter 2.2 --- Sources and Substrates --- p.7
Chapter 2.3 --- Growth of A1N nanowires --- p.8
Chapter 2.4 --- Growth of AlGaN nanowires --- p.9
Chapter Chapter 3 --- Characterization --- p.11
Chapter 3.1 --- Scanning Electron Microscopy --- p.11
Chapter 3.1.1 --- Topographic images by secondary electrons --- p.11
Chapter 3.1.2 --- Elemental Analysis by Energy Dispersive X-ray --- p.12
Chapter 3.2 --- Transmission Electron Microscopy --- p.12
Chapter 3.3 --- X-Ray Diffraction --- p.14
Chapter 3.4 --- Micro-Raman --- p.15
Chapter Chapter 4 --- Results and Discussion --- p.18
Chapter 4.1 --- A1N nano-structures --- p.18
Chapter 4.1.1 --- A1N nano-leaves grown on silicon substrates --- p.18
Chapter 4.1.2 --- A1N nanowires grown on silicon substrates --- p.19
Chapter 4.1.3 --- SiNx nanowires grown on silicon substrates --- p.22
Chapter 4.1.4 --- A1N nanowires grown on sapphire substrates --- p.26
Chapter 4.1.5 --- Comparison with the results of other research groups --- p.31
Chapter 4.2 --- AlGaN nano-structures --- p.33
Chapter 4.2.1 --- AlGaN nanowires grown on silicon substrates --- p.33
Chapter 4.2.2 --- Temperature dependence --- p.38
Chapter 4.2.3 --- The influence of the mass ratio (Ga/Al) in the precursor metal sources --- p.43
Chapter 4.2.4 --- Substrate effect --- p.46
Chapter Chapter 5 --- Suggestion of the growth mechanism --- p.51
Chapter 5.1 --- Growth mechanisms: an introduction --- p.51
Chapter 5.2 --- The growth mechanisms for our produced samples --- p.57
Chapter 5.2.1 --- Growth mechanism for A1N nanowires --- p.58
Chapter 5.2.2 --- Growth mechanism for AlGaN nanowires --- p.61
Chapter 5.2.3 --- Substrate effect --- p.65
Chapter Chapter 6 --- Conclusions --- p.71
Appendix --- p.73
Sarigiannidou, Eirini. "Electron Microscopy and III-Nitride Nanostructured." Phd thesis, 2004. http://tel.archives-ouvertes.fr/tel-00937274.
Повний текст джерелаLoeber, David A. S. "Stimulated emission and lasing in III-V nitride heterostructures." 1997. https://scholarworks.umass.edu/dissertations/AAI9737554.
Повний текст джерела"Optical Properties of III-Nitride Semiconductors for Power Electronics and Photovoltaics." Doctoral diss., 2020. http://hdl.handle.net/2286/R.I.62699.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Materials Science and Engineering 2020
Kong, Wei. "Lattice Engineering of III-Nitride Heterostructures and Their Applications." Diss., 2016. http://hdl.handle.net/10161/12195.
Повний текст джерелаIII-Nitride materials have recently become a promising candidate for superior applications over the current technologies. However, certain issues such as lack of native substrates, and high defect density have to be overcome for further development of III-Nitride technology. This work presents research on lattice engineering of III-Nitride materials, and the structural, optical, and electrical properties of its alloys, in order to approach the ideal material for various applications. We demonstrated the non-destructive and quantitative characterization of composition modulated nanostructure in InAlN thin films with X-ray diffraction. We found the development of the nanostructure depends on growth temperature, and the composition modulation has impacts on carrier recombination dynamics. We also showed that the controlled relaxation of a very thin AlN buffer (20 ~ 30 nm) or a graded composition InGaN buffer can significantly reduce the defect density of a subsequent epitaxial layer. Finally, we synthesized an InAlGaN thin films and a multi-quantum-well structure. Significant emission enhancement in the UVB range (280 – 320 nm) was observed compared to AlGaN thin films. The nature of the enhancement was investigated experimentally and numerically, suggesting carrier confinement in the In localization centers.
Dissertation
"Design, Growth, and Characterization of III-Sb and III-N Materials for Photovoltaic Applications." Doctoral diss., 2019. http://hdl.handle.net/2286/R.I.53926.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Electrical Engineering 2019
Reed, Mason Jacob. "Light emitting diodes and dilute magnetic semiconductors in the III-nitride materials system." 2005. http://www.lib.ncsu.edu/theses/available/etd-07052005-162129/unrestricted/etd.pdf.
Повний текст джерела"Modeling, Growth and Characterization of III-V and Dilute Nitride Antimonide Materials and Solar Cells." Doctoral diss., 2017. http://hdl.handle.net/2286/R.I.44054.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Electrical Engineering 2017
Rajpalke, Mohana K. "Semipolar And Nonpolar Group III-Nitride Heterostructures By Plasma-Assisted Molecular Beam Epitaxy." Thesis, 2012. https://etd.iisc.ac.in/handle/2005/2483.
Повний текст джерелаRajpalke, Mohana K. "Semipolar And Nonpolar Group III-Nitride Heterostructures By Plasma-Assisted Molecular Beam Epitaxy." Thesis, 2012. http://hdl.handle.net/2005/2483.
Повний текст джерелаChandrasekar, Hareesh. "Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives." Thesis, 2016. http://etd.iisc.ac.in/handle/2005/2740.
Повний текст джерелаChandrasekar, Hareesh. "Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives." Thesis, 2016. http://hdl.handle.net/2005/2740.
Повний текст джерелаBhat, Thirumaleshwara N. "Group III Nitride/p-Silicon Heterojunctions By Plasma Assisted Molecular Beam Epitaxy." Thesis, 2012. https://etd.iisc.ac.in/handle/2005/2454.
Повний текст джерела