Статті в журналах: "III-As nanowires"

1

Mastro, Michael A., Neeraj Nepal, Fritz Kub, Jennifer K. Hite, Jihyun Kim, and Charles R. Eddy. "Nickel Foam as a Substrate for III-nitride Nanowire Growth." MRS Proceedings 1538 (2013): 311–16. http://dx.doi.org/10.1557/opl.2013.504.

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ABSTRACTThis article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.

2

Leshchenko E. D. and Dubrovskii V. G. "Modeling the growth of tapered nanowires on reflecting substrates." Technical Physics Letters 48, no. 12 (2022): 11. http://dx.doi.org/10.21883/tpl.2022.12.54937.19358.

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The formation of tapered self-catalyzed nanowires grown on reflecting substrates is studied theoretically. Within the model, the nanowire radius may be obtained as a function of length. The model describes the morphology of tapered nanowires. We study the influence of different growth parameters, including the III/V flux ratio and pitch, on the nanowire morphology. Keywords: III-V nanowires, morphology, self-focusing effect, modeling

3

Dubrovskii, Vladimir G., and Egor D. Leshchenko. "Modeling the Radial Growth of Self-Catalyzed III-V Nanowires." Nanomaterials 12, no. 10 (May 16, 2022): 1698. http://dx.doi.org/10.3390/nano12101698.

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A new model for the radial growth of self-catalyzed III-V nanowires on different substrates is presented, which describes the nanowire morphological evolution without any free parameters. The model takes into account the re-emission of group III atoms from a mask surface and the shadowing effect in directional deposition techniques such as molecular beam epitaxy. It is shown that radial growth is faster for larger pitches of regular nanowire arrays or lower surface density, and can be suppressed by increasing the V/III flux ratio or decreasing re-emission. The model describes quite well the data on the morphological evolution of Ga-catalyzed GaP and GaAs nanowires on different substrates, where the nanowire length increases linearly and the radius enlarges sub-linearly with time. The obtained analytical expressions and numerical data should be useful for morphological control over different III-V nanowires in a wide range of growth conditions.

4

GAO, Q., H. J. JOYCE, S. PAIMAN, J. H. KANG, H. H. TAN, Y. KIM, L. M. SMITH, et al. "III-V COMPOUND SEMICONDUCTOR NANOWIRES FOR OPTOELECTRONIC DEVICE APPLICATIONS." International Journal of High Speed Electronics and Systems 20, no. 01 (March 2011): 131–41. http://dx.doi.org/10.1142/s0129156411006465.

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GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si ) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB , can also be engineered by carefully controlling the V/III ratio and catalyst size.

5

Лещенко, Е. Д., та В. Г. Дубровский. "Моделирование роста заостренных нитевидных нанокристаллов на маскированных подложках". Письма в журнал технической физики 48, № 23 (2022): 14. http://dx.doi.org/10.21883/pjtf.2022.23.53945.19358.

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The formation of tapered self-catalyzed nanowires grown on reflecting substrates is studied theoretically. Within the model the nanowire radius is obtained as a function of length. The model describes the morphology of tapered nanowires. We study the influence of different growth parameters on the nanowire morphology, including the III/V flux ratio and pitch.

6

Yip, Sen Po, Wei Wang, and Johnny C. Ho. "(Invited, Digital Presentation) Ternary III-Sb Nanowires: Synthesis and Their Electronic and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 36 (October 9, 2022): 1306. http://dx.doi.org/10.1149/ma2022-02361306mtgabs.

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Nowadays, the increasing demand for low power and highly efficient electronics and optoelectronics has driven the semiconductor industry to look for the alternatives of Si which is approaching its physical limit. Materials like graphene, carbon nanotube, III-V materials and so on, are the most promising candidates as the replacement of silicon. Among them, III-Sb materials, a sub-group of III-V materials, have been extensively researched due to their narrow and direct bandgap, high charge carrier mobility and high g-factor which makes them suitable for transistor, infra red detection and so on. Their nanowire counterparts have also been explored as the geometry of nanowire provide unique advantages. One of the research directions of III-Sb nanowire is to study their ternary counterpart (III-V-Sb or III-III’-Sb) like InAsSb, GaAsSb and InGaSb. Compares with binary compounds, ternary compound provides more room for engineering freedom like lattice parameter engineering and bandgap tuning. In this presentation, the synthesis and the electronic and optoelectronic applications of ternary III-Sb nanowires will be introduced. The high-crystal quality and high-aspect ratio ternary III-Sb nanowires were synthesized by using solid-source chemical vapor deposition method. Composition tunability was demonstrated successfully by adjusting the precursor ratio which allowed us to control the physical properties. We further integrated these nanowires into transistors and photodetectors which exhibit good performance like high carrier mobility and good photoresponse.

7

Saleem, Samra, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed, and Muhammad Asghar. "Phase Control Growth of InAs Nanowires by Using Bi Surfactant." Coatings 12, no. 2 (February 15, 2022): 250. http://dx.doi.org/10.3390/coatings12020250.

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To realize practical applications of nanowire-based devices, it is critical, yet challenging, to control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that controlled wurtzite and zincblende phases of InAs nanowires can be fabricated using bismuth (Bi) as a surfactant. For this purpose, catalyst free selective area epitaxial growth of InAs nanowires was performed using molecular beam epitaxy (MBE). During the growth, Bi was used which may act as a wetting agent influencing the surface energy at growth plane ends, promoting wurtzite crystal phase growth. For a demonstration, wurtzite and zincblende InAs nanowires were obtained with and without using Bi-flux. Photoluminescence spectroscopy (PL) analysis of the nanowires indicates a strong correlation between wurtzite phase and the Bi-flux. It is observed that the bandgap energy of wurtzite and zincblende nanowires are ∼0.50 eV and ∼0.42 eV, respectively, and agree well with theoretical estimated bandgap of corresponding InAs crystal phases. A blue shift in PL emission peak energy was found with decreasing nanowire diameter. The controlled wurtzite and zincblende crystal phase and its associated heterostructure growth of InAs nanowires on Si may open up new opportunities in bandgap engineering and related device applications integrated on Si. Furthermore, this work also illustrates that Bi as a surfactant could play a dynamic role in the growth mechanism of III-V compound semiconductors.

8

Kang, Sung Bum, Rahul Sharma, Minhyeok Jo, Su In Kim, Jeongwoo Hwang, Sang Hyuk Won, Jae Cheol Shin, and Kyoung Jin Choi. "Catalysis-Free Growth of III-V Core-Shell Nanowires on p-Si for Efficient Heterojunction Solar Cells with Optimized Window Layer." Energies 15, no. 5 (February 28, 2022): 1772. http://dx.doi.org/10.3390/en15051772.

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The growth of high-quality compound semiconductor materials on silicon substrates has long been studied to overcome the high price of compound semiconductor substrates. In this study, we successfully fabricated nanowire solar cells by utilizing high-quality hetero p-n junctions formed by growing n-type III-V nanowires on p-silicon substrates. The n-InAs0.75P0.25 nanowire array was grown by the Volmer–Weber mechanism, a three-dimensional island growth mode arising from a lattice mismatch between III-V and silicon. For the surface passivation of n-InAs0.75P0.25 core nanowires, a wide bandgap InP shell was formed. The nanowire solar cell was fabricated by benzocyclobutene (BCB) filling, exposure of nanowire tips by reactive-ion etching, electron-beam deposition of ITO window layer, and finally metal grid electrode process. In particular, the ITO window layer plays a key role in reducing light reflection as well as electrically connecting nanowires that are electrically separated from each other. The deposition angle was adjusted for conformal coating of ITO on the nanowire surface, and as a result, the lowest light reflectance and excellent electrical connectivity between the nanowires were confirmed at an oblique deposition angle of 40°. The solar cell based on the heterojunction between the n-InAs0.75P0.25/InP core-shell nanowire and p-Si exhibited a very high photoelectric conversion efficiency of 9.19% with a current density of 27.10 mA/cm2, an open-circuit voltage of 484 mV, and a fill factor of 70.1%.

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Дубровский, В. Г., А. С. Соколовский та И. В. Штром. "Свободная энергия образования зародыша при росте III-V нитевидного нанокристалла". Письма в журнал технической физики 46, № 18 (2020): 3. http://dx.doi.org/10.21883/pjtf.2020.18.49991.18401.

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An expression for the free energy of forming an island from a catalyst droplet in the vapor-liquid-solid growth of III-V nanowires is obtained. The effect of the droplet depletion with its group V (As) content is studied in the presence of material influx from vapor. Different growth regimes of a nanowire monolayer are theoretically analyzed, including the regime with the stopping size under very low As concentrations in liquid. It is shown that the island stops growing when the As content in the droplet decreases to its equilibrium value. The obtained results should be useful for understanding and modeling the growth kinetics of III-V nanowires, their crystal phase, nucleation statistics and length distributions within the ensembles of nanowires as well as the doping process.

10

Demontis, Valeria, Valentina Zannier, Lucia Sorba, and Francesco Rossella. "Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays." Nanomaterials 11, no. 8 (August 16, 2021): 2079. http://dx.doi.org/10.3390/nano11082079.

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Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.

11

Hijazi, Hadi, Mohammed Zeghouane, and Vladimir G. Dubrovskii. "Thermodynamics of the Vapor–Liquid–Solid Growth of Ternary III–V Nanowires in the Presence of Silicon." Nanomaterials 11, no. 1 (January 2, 2021): 83. http://dx.doi.org/10.3390/nano11010083.

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Based on a thermodynamic model, we quantify the impact of adding silicon atoms to a catalyst droplet on the nucleation and growth of ternary III–V nanowires grown via the self-catalyzed vapor–liquid–solid process. Three technologically relevant ternaries are studied: InGaAs, AlGaAs and InGaN. For As-based alloys, it is shown that adding silicon atoms to the droplet increases the nanowire nucleation probability, which can increase by several orders magnitude depending on the initial chemical composition of the catalyst. Conversely, silicon atoms are found to suppress the nucleation rate of InGaN nanowires of different compositions. These results can be useful for understanding and controlling the vapor–liquid–solid growth of ternary III–V nanowires on silicon substrates as well as their intentional doping with Si.

12

Xu, Hongyi, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, and Jin Zou. "Palladium Catalyzed Defect-free <110> Zinc-Blende Structured InAs Nanowires." MRS Proceedings 1551 (2013): 95–99. http://dx.doi.org/10.1557/opl.2013.990.

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ABSTRACTIn this study, Pd thin film is used as catalyst to grow epitaxial InAs nanowires on GaAs(111)B substrate in a metal-organic chemical vapor deposition reactor to explore the growth mechanism and the effects of non-gold catalysts in the growth of III-V epitaxial nanowires. Through detailed morphological, structural and chemical characterization using scanning and transmission electron microscopy, it is found that defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four {111} sidewall facets forming a diamond shaped cross-section. Furthermore, the interface between the nanowire/catalyst is found to be the uncommon {113} planes. It is anticipated that these zinc-blende structured InAs nanowires are grown via the vapor-liquid-solid mechanism. The defect-free nature of these nanowires arises from the non-<111> growth direction and non-{111} nanowire/catalyst interface.

13

Dubrovskii, Vladimir G., and Hadi Hijazi. "Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires." Nanomaterials 10, no. 5 (April 27, 2020): 833. http://dx.doi.org/10.3390/nano10050833.

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III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle. We investigate theoretically how this effect influences the electron-to-hole ratio in Si-doped GaAs nanowires. Several factors influencing the As depletion in the vapor–liquid–solid nanowire growth are considered, including the time-scale separation between the steps of island growth and refill, the “stopping effect” at very low As concentrations, and the maximum As concentration at nucleation and desorption. It is shown that the As depletion effect is stronger for slower nanowire elongation rates and faster for island growth relative to refill. Larger concentration oscillations suppress the electron-to-hole ratio and substantially enhance the tendency for the p-type Si doping of GaAs nanowires, which is a typical picture in molecular beam epitaxy. The oscillations become weaker and may finally disappear in vapor deposition techniques such as hydride vapor phase epitaxy, where the n-type Si doping of GaAs nanowires is more easily achievable.

14

Dubrovskii, Vladimir G. "Can Nanowires Coalesce?" Nanomaterials 13, no. 20 (October 16, 2023): 2768. http://dx.doi.org/10.3390/nano13202768.

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Coalescence of nanowires and other three-dimensional structures into continuous film is desirable for growing low-dislocation-density III-nitride and III-V materials on lattice-mismatched substrates; this is also interesting from a fundamental viewpoint. Here, we develop a growth model for vertical nanowires which, under rather general assumptions on the solid-like coalescence process within the Kolmogorov crystallization theory, results in a morphological diagram for the asymptotic coverage of a substrate surface. The coverage is presented as a function of two variables: the material collection efficiency on the top nanowire facet a and the normalized surface diffusion flux of adatoms from the NW sidewalls b. The full coalescence of nanowires is possible only when a=1, regardless of b. At a>1, which often holds for vapor–liquid–solid growth with a catalyst droplet, nanowires can only partly merge but never coalesce into continuous film. In vapor phase epitaxy techniques, the NWs can partly merge but never fully coalesce, while in the directional molecular beam epitaxy the NWs can fully coalesce for small enough contact angles of their droplets corresponding to a=1. The growth kinetics of nanowires and evolution of the coverage in the pre-coalescence stage is also considered. These results can be used for predicting and controlling the degree of surface coverage by nanowires and three-dimensional islands by tuning the surface density, droplet size, adatoms diffusivity, and geometry of the initial structures in the vapor–liquid–solid, selective area, or self-induced growth by different epitaxy techniques.

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KAUR, MANMEET, KAILASA GANAPATHI, NIYANTA DATTA, K. P. MUTHE, and S. K. GUPTA. "H2S DETECTION BY CuO NANOWIRES AT ROOM TEMPERATURE." International Journal of Nanoscience 10, no. 04n05 (August 2011): 733–37. http://dx.doi.org/10.1142/s0219581x11009118.

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Room temperature gas sensing properties of CuO nanowires synthesized by thermal oxidation of copper foils was studied in different configurations: (i) isolated nanowires aligned between two electrodes, (ii) as grown CuO foil consisting of nanowires and (iii) CuO nanowire films. Sensors were studied for response to different gases. Different sensors showed qualitatively different response on exposure to H2S . Isolated nanowires showed high sensitivity, (~200% for 10 ppm of gas) and fast response (30 s) and recovery times (60 s). In these samples, the resistance mainly decreased on exposure to H2S (though a small initial increase was observed). In CuO foils, resistance increased for low concentrations (5–10 ppm) but decreased at high concentrations. In the case of CuO nanowire films, resistance only increased on exposure of H2S (upto 400 ppm). Since CuO is a p-type semiconductor, on exposure to H2S an increase in resistance is expected due to oxygen adsorption related process. Decrease in resistance in some of the sensors was understood in terms of reaction of CuO with H2S resulting in the formation of CuS .

16

Li, Ziyuan, Jeffery Allen, Monica Allen, Hark Hoe Tan, Chennupati Jagadish, and Lan Fu. "Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors." Materials 13, no. 6 (March 19, 2020): 1400. http://dx.doi.org/10.3390/ma13061400.

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Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

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VERMA, ASHWANI, BAHNIMAN GHOSH, and AKSHAY KUMAR SALIMATH. "EFFECT OF ELECTRIC FIELD, TEMPERATURE AND CORE DIMENSIONS IN III–V COMPOUND CORE–SHELL NANOWIRES." Nano 09, no. 04 (June 2014): 1450051. http://dx.doi.org/10.1142/s1793292014500519.

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In this paper, we have used semiclassical Monte Carlo method to show the dependence of spin relaxation length in III–V compound semiconductor core–shell nanowires on different parameters such as lateral electric field, temperature and core dimensions. We have reported the simulation results for electric field in the range of 0.5–10 kV/cm, temperature in the range of 77–300 K and core length ranging from 2 nm to 8 nm. The spin relaxation mechanisms used in III–V compound semiconductor core–shell nanowire are D'yakonov–Perel (DP) relaxation and Elliott–Yafet (EY) relaxation. Depending upon the choice of materials for core and shell, nanowire forms two types of band structures. We have used InSb – GaSb core–shell nanowire and InSb – GaAs core–shell nanowire and nanowire formed by swapping the core and shell materials to show all the results.

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Suriati, Paiman, Gao Qiang, Joyce Hannah, Tan Hark Hoe, Jagadish Chennupati, Kim Yong, Guo Yanan, et al. "MOCVD-Grown Indium Phosphide Nanowires for Optoelectronics." Advanced Materials Research 832 (November 2013): 201–5. http://dx.doi.org/10.4028/www.scientific.net/amr.832.201.

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We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quality indium phosphide (InP) nanowires suitable for optoelectronic device applications. Growth temperature, V/III ratio, and catalyst particle size have a significant effect on the morphology, crystallographic quality, and optical properties of the resulting nanowires. Significantly, we find that higher growth temperatures or higher V/III ratios promote the formation of wurtzite (WZ) nanowires while zinc-blende (ZB) nanowires are favourable at lower growth temperatures and lower V/III ratios. Results also show that InP nanowires grow preferably in the WZ crystal structure than the ZB crystal structure with increasing V/III ratio or decreasing diameter. This causes a blue-shift in the bandgap as growth temperature increases. These results show that careful control of growth temperature, V/III ratio and catalyst size are crucial for obtaining InP nanowires of a specific crystal structure needed for device applications.

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Al Hassan, Ali, Jonas Lähnemann, Arman Davtyan, Mahmoud Al-Humaidi, Jesús Herranz, Danial Bahrami, Taseer Anjum, et al. "Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments." Journal of Synchrotron Radiation 27, no. 5 (August 12, 2020): 1200–1208. http://dx.doi.org/10.1107/s1600577520009789.

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Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the required high X-ray dose and prolonged exposure times can lead to radiation damage. To unveil the origin of radiation damage, a comparison is made of nXRD experiments carried out on individual semiconductor nanowires in their as-grown geometry both under ambient conditions and under He atmosphere at the microfocus station of the P08 beamline at the third-generation source PETRA III. Using an incident X-ray beam energy of 9 keV and photon flux of 1010 s−1, the axial lattice parameter and tilt of individual GaAs/In0.2Ga0.8As/GaAs core–shell nanowires were monitored by continuously recording reciprocal-space maps of the 111 Bragg reflection at a fixed spatial position over several hours. In addition, the emission properties of the (In,Ga)As quantum well, the atomic composition of the exposed nanowires and the nanowire morphology were studied by cathodoluminescence spectroscopy, energy-dispersive X-ray spectroscopy and scanning electron microscopy, respectively, both prior to and after nXRD exposure. Nanowires exposed under ambient conditions show severe optical and morphological damage, which was reduced for nanowires exposed under He atmosphere. The observed damage can be largely attributed to an oxidation process from X-ray-induced ozone reactions in air. Due to the lower heat-transfer coefficient compared with GaAs, this oxide shell limits the heat transfer through the nanowire side facets, which is considered as the main channel of heat dissipation for nanowires in the as-grown geometry.

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Mäntynen, Henrik, Nicklas Anttu, Zhipei Sun, and Harri Lipsanen. "Single-photon sources with quantum dots in III–V nanowires." Nanophotonics 8, no. 5 (April 2, 2019): 747–69. http://dx.doi.org/10.1515/nanoph-2019-0007.

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AbstractSingle-photon sources are one of the key components in quantum photonics applications. These sources ideally emit a single photon at a time, are highly efficient, and could be integrated in photonic circuits for complex quantum system designs. Various platforms to realize such sources have been actively studied, among which semiconductor quantum dots have been found to be particularly attractive. Furthermore, quantum dots embedded in bottom-up-grown III–V compound semiconductor nanowires have been found to exhibit relatively high performance as well as beneficial flexibility in fabrication and integration. Here, we review fabrication and performance of these nanowire-based quantum sources and compare them to quantum dots in top-down-fabricated designs. The state of the art in single-photon sources with quantum dots in nanowires is discussed. We also present current challenges and possible future research directions.

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Reznik R. R., Gridchin V. O., Kotlyar K. P., Khrebtov A. I., Ubyivovk E. V., Mikushev S. V., Li D., et al. "Formation of InGaAs quantum dots in the body of AlGaAs nanowires via molecular-beam epitaxy." Semiconductors 56, no. 7 (2022): 492. http://dx.doi.org/10.21883/sc.2022.07.54653.16.

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The results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InGaAs quantum dots are presented. It was shown that, as in the case of the InP/InAsP material system, the formation of predominantly two objects is observed in the body of AlGaAs nanowire: InGaAs quantum dot due to axial growth and InGaAs quantum well due to radial growth. It is important to note that the grown nanostructures were formed predominantly in the wurtzite crystallographic phase. The results of the grown nanostructures physical properties studies indicate that they are promising for moving single-photon sources to the long-wavelength region. The proposed technology opens up new possibilities for integration direct-gap III-V materials with a silicon platform for various applications in photonics and quantum communications. Keywords: semiconductors, nanowires, quantum dots, III-V compounds, silicon, molecular-beam epitaxy.

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Leshchenko, Egor D., and Vladimir G. Dubrovskii. "An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires." Nanomaterials 13, no. 10 (May 17, 2023): 1659. http://dx.doi.org/10.3390/nano13101659.

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Modeling of the growth process is required for the synthesis of III–V ternary nanowires with controllable composition. Consequently, new theoretical approaches for the description of epitaxial growth and the related chemical composition of III–V ternary nanowires based on group III or group V intermix were recently developed. In this review, we present and discuss existing modeling strategies for the stationary compositions of III–V ternary nanowires and try to systematize and link them in a general perspective. In particular, we divide the existing approaches into models that focus on the liquid–solid incorporation mechanisms in vapor–liquid–solid nanowires (equilibrium, nucleation-limited, and kinetic models treating the growth of solid from liquid) and models that provide the vapor–solid distributions (empirical, transport-limited, reaction-limited, and kinetic models treating the growth of solid from vapor). We describe the basic ideas underlying the existing models and analyze the similarities and differences between them, as well as the limitations and key factors influencing the stationary compositions of III–V nanowires versus the growth method. Overall, this review provides a basis for choosing a modeling approach that is most appropriate for a particular material system and epitaxy technique and that underlines the achieved level of the compositional modeling of III–V ternary nanowires and the remaining gaps that require further studies.

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Berwanger, Mailing, Aline L. Schoenhalz, Cláudia L. dos Santos, and Paulo Piquini. "Oxidation of InP nanowires: a first principles molecular dynamics study." Physical Chemistry Chemical Physics 18, no. 45 (2016): 31101–6. http://dx.doi.org/10.1039/c6cp05901e.

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Kim, P. SG, Y. H. Tang, T. K. Sham, and S. T. Lee. "Condensation of silicon nanowires from silicon monoxide by thermal evaporation — An X-ray absorption spectroscopy investigation." Canadian Journal of Chemistry 85, no. 10 (October 1, 2007): 695–701. http://dx.doi.org/10.1139/v07-054.

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We report a Si K-edge X-ray absorption fine structures (XAFS) study of silicon monoxide (SiO), the starting material for silicon nanowire preparation, its silicon nanowires, and the residue after the preparation of the starting material. The silicon nanowires were condensed onto three different substrates, (i) the wall of the furnace quartz tube, (ii) a porous silicon substrate, and (iii) a Si(100) silicon wafer. It was found that the Si K-edge XAFS of SiO exhibits identifiable spectral features characteristic of Si in 0 and 4 oxidation states as well as in intermediate oxidation states, while the SiO residue primarily shows features of Si(0) and Si(4). The XAFS suggest that SiO is not exactly a simple mixture of Si and SiO2. The silicon nanowires produced by the process exhibit morphology and luminescence property variations that depend on the nature of the substrate. X-ray excited optical luminescence (XEOL) at the O K-edge suggests an efficient energy transfer to the optical decay channel. The results and their implications are discussed.Key words: silicon nanowires, thermal evaporation, silicon monoxide, X-ray absorption fine structures, X-ray excited optical luminescence.

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SALIMATH, AKSHAYKUMAR, and BAHNIMAN GHOSH. "SPIN RELAXATION IN InP AND STRAINED InP NANOWIRES." SPIN 04, no. 03 (September 2014): 1450003. http://dx.doi.org/10.1142/s2010324714500039.

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In this paper, we employ semiclassical Monte Carlo approach to study spin polarized transport in InP and strained InP nanowires on GaAs substrate. Due to higher spin relaxation lengths, InP is being researched as suitable III–V material for spintronics related applications. Spin relaxation in InP channel is as a result of D'yakonov–Perel (DP) relaxation and Elliott–Yafet (EY) relaxation. We have considered injection polarization along z-direction and the magnitude of ensemble averaged spin variation is studied along the x-direction i.e., along transport direction. The effect of strain on various scattering rates and spin relaxation length is studied. We then present the effect of variation of nanowire width on spin relaxation length for the case of both strained and unstrained InP nanowire. The wire cross-section is varied between 4 × 4 nm2 and 10 × 10 nm2.

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Bakkers, Erik P. A. M., Magnus T. Borgström, and Marcel A. Verheijen. "Epitaxial Growth of III-V Nanowires on Group IV Substrates." MRS Bulletin 32, no. 2 (February 2007): 117–22. http://dx.doi.org/10.1557/mrs2007.43.

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AbstractSemiconducting nanowires are emerging as a route to combine heavily mismatched materials. The high level of control on wire dimensions and chemical composition makes them promising materials to be integrated in future silicon technologies as well as to be the active element in optoelectronic devices.This ar ticle reviews the recent progress in epitaxial growth of nanowires on non-corresponding substrates. We highlight the advantage of using small dimensions to facilitate accommodation of the lattice strain at the surface of the structures. More specifically, we will focus on the growth of III-V nanowires on Group IV substrates. This approach enables the integration of high-perform ance III-V semiconductors monolithically into mature silicon technology, since fundamental issues of III-V integration on Si such as lattice and thermal expansion mismatch can be overcome. Moreover, as there will only be one nucleation site per crystallite, the system will not suffer from antiphase boundaries.Issues that affect the electronic properties of the heterojunction, such as the crystallographic quality and diffusion of elements across the heterointerface, will be discussed. Finally, we address potential applications of vertical III-V nanowires grown on silicon.

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Paramasivam, Pattunnarajam, Naveenbalaji Gowthaman, and Viranjay M. Srivastava. "Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications." Nanomaterials 13, no. 6 (March 7, 2023): 959. http://dx.doi.org/10.3390/nano13060959.

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This research work uses sp3d5s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La2O3) material and the orientation with z [001] using the Non-Equilibrium Green Function (NEGF) method, have been analyzed. The electrical characteristics and the parameters for the multi-gate nanowires have been realized. A nanowire comprises a heavily doped n+ donor source and drains doping and n-donor doping at the channel. The specified nanowire has a gate length and channel length of 15 nm each, a source-drain device length LSD = 35 nm, with La2O3 as 1 nm (gate dielectric oxide) each on the top and bottom of the core material (Si/GaAs). The Gate-All-Around (GAA) Si NW is superior with a high (ION/IOFF ratio) of 1.06 × 109, and a low leakage current, or OFF current (IOFF), of 3.84 × 10−14 A. The measured values of the mid-channel conduction band energy (Ec) and charge carrier density (ρ) at VG = VD = 0.5 V are −0.309 eV and 6.24 × 1023 C/cm3, respectively. The nanowires with hydrostatic strain have been determined by electrostatic integrity and increased mobility, making them a leading solution for upcoming technological nodes. The transverse dimensions of the rectangular nanowires with similar energy levels are realized and comparisons between Si and GaAs NWs have been performed.

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Tirrito, Matteo, Phillip Manley, Christiane Becker, Eva Unger, and Magnus T. Borgström. "Optical Analysis of Perovskite III-V Nanowires Interpenetrated Tandem Solar Cells." Nanomaterials 14, no. 6 (March 14, 2024): 518. http://dx.doi.org/10.3390/nano14060518.

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Multi-junction photovoltaics approaches are being explored to mitigate thermalization losses that occur in the absorption of high-energy photons. However, the design of tandem cells faces challenges such as light reflection and parasitic absorption. Nanostructures have emerged as promising solutions due to their anti-reflection properties, which enhances light absorption. III-V nanowires (NWs) solar cells can achieve strong power conversion efficiencies, offering the advantage of potentially integrating tunnel diodes within the same fabrication process. Metal halide perovskites (MHPs) have gained attention for their optoelectronic attributes and cost-effectiveness. Notably, both material classes allow for tunable bandgaps. This study explores the integration of MHPs with III-V NWs solar cells in both two-terminal and three-terminal configurations. Our primary focus lies in the optical analysis of a tandem design using III-V semiconductor nanowire arrays in combination with perovskites, highlighting their potential for tandem applications. The space offered by the compact footprint of NW arrays is used in an interpenetrated tandem structure. We systematically optimize the bottom cell, addressing reflectivity and parasitic absorption, and extend to a full tandem structure, considering experimentally feasible thicknesses. Simulation of a three-terminal structure highlights a potential increase in efficiency, decoupling the operating points of the subcells. The two-terminal analysis underscores the benefits of nanowires in reducing reflection and achieving a higher matched current between the top and the bottom cells. This research provides significant insights into NW tandem solar cell optics, enhancing our understanding of their potential to improve photovoltaic performance.

29

Dubrovskii V. G., Rylkova M. V., Sokolovskii A. S., Sokolova Zh. V., and Mikushev S. V. "Role of the shadowing effect in the growth kinetics of III-V nanowires by molecular beam epitaxy." Technical Physics Letters 48, no. 6 (2022): 12. http://dx.doi.org/10.21883/tpl.2022.06.53455.19202.

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A model for III-V nanowire (NW) growth in molecular beam epitaxy (MBE) is developed, which describes the NW growth by surface diffusion of adatoms influenced by the shadowing effect. It is shown that the shadowing effect strongly influences the growth kinetics in dense ensembles of NWs. A new solution for the NW length as a function of its radius and deposition thickness is obtained. A comparison is given for theoretical and experimental lengths of InP NWs grown on either adsorbing or reflecting substrates. Keywords: nanowires, adatom diffusion, shadowing effect.

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Dick, Kimberly A., Knut Deppert, Lisa S. Karlsson, Magnus W. Larsson, Werner Seifert, L. Reine Wallenberg, and Lars Samuelson. "Directed Growth of Branched Nanowire Structures." MRS Bulletin 32, no. 2 (February 2007): 127–33. http://dx.doi.org/10.1557/mrs2007.45.

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AbstractWe describe the production of hierarchical branched nanowire structures by the sequential seeding of multiple wire generations with metal nanoparticles. Such complex structures represent the next step in the study of functional nanowires, as they increase the potential functionality of nanostructures produced in a self-assembled way. It is possible, for example, to fabricate a variety of active heterostructure segments with different compositions and diameters within a single connected structure. The focus of this work is on epitaxial III-V semiconductor branched nanowire structures, with the two materials GaP and In As used as typical examples of branched structures with cubic (zinc blende) and hexagonal (wurtzite) crystal structures. The general morphology of these structures will be described, as well as the relationship between morphology and crystal structure.

31

Alam, Kazi, Pawan Kumar, Devika Laishram, Charles Jensen, Annabelle Degg, Narendra Chaulagain, Frank Hegmann, Tom Nilges, Rakesh Sharma, and Karthik Shankar. "C3N4 and C3N5 Nanosheets As Passivation Layers and Carrier Extractors for Inorganic Semiconductor Nanowires and Quantum Dots." ECS Meeting Abstracts MA2022-01, no. 15 (July 7, 2022): 2379. http://dx.doi.org/10.1149/ma2022-01152379mtgabs.

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Inorganic semiconductor nanowires and quantum dots made of chalcogenides, III-V semiconductors and halide perovskites offer exciting potential for optoelectronic devices. The orthogonalization possible in nanowires between the normally competing processes of charge generation and charge separation have been used to project very high operating performance exceeding that of thin films and single crystals in light harvesting devices such as solar cells, photodetectors, photocatalysts and photoelectrolyzers. Likewise, inorganic quantum dots with size-tunable absorption and emission spectra are excellent candidates for light emitting devices as well as light harvesting devices. However, the practical performance of inorganic nanowire based optoelectronic devices has significantly lagged theoretical predictions. A major reason for the discrepancy between theory and experiment is the presence of surface traps and defects in nanowires and quantum dots, which exhibit a large surface area to volume ratio. Several chemical treatments and annealing regimens have been employed to heal surface defects in nanowires and quantum dots. One popular strategy involves wrapping nanowires and/or quantum dots with a thin coating of a molecular monolayer (e.g. alkanethiols) or an atomic layer deposited conformal oxide. While such core-shell architectures are frequently effective in reducing surface defects, the surface passivation is invariably accompanied by a deterioration in optoelectronic properties due to the difficulty experienced by charge carriers in tunneling through the thin shell layer. The resulting trade-off between surface passivation and carrier extraction limits performance improvements in light harvesting devices. Thus there is a strong need for passivating layers that do not negatively impact carrier extraction. Herein, we show that graphitic carbon nitride coatings are highly effective in passivating the surfaces of inorganic nanowires and quantum dots while preserving excellent carrier transport and extraction. Three illustrative examples are provided together with in-depth spectroscopic and electrical characterization: (1) Cesium lead bromide (CsPbBr3) quantum dots passivated by g-C3N4 nanosheets and performing spectacularly as CO2 photoreduction catalysts and water-splitting photoanodes (2) The double helical ternary semiconductor SnIP passivated by g-C3N4 nanosheets which experienced a remarkable improvement in photoelectrochemical performance (3) Cadmium sulfide (CdS) nanowires passivated by C3N5 nanosheets resulting in a superior photocatalytic performance

32

Huang, Yueyue, Egan H. Doeven, Lifen Chen, Yuanyuan Yao, Yueliang Wang, Bingyong Lin, Yanbo Zeng, Lei Li, Zhaosheng Qian, and Longhua Guo. "Facial Preparation of Cyclometalated Iridium (III) Nanowires as Highly Efficient Electrochemiluminescence Luminophores for Biosensing." Biosensors 13, no. 4 (April 4, 2023): 459. http://dx.doi.org/10.3390/bios13040459.

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In this study, highly efficient ECL luminophores composed of iridium complex-based nanowires (Ir–NCDs) were synthesized via covalently linking bis(2-phenylpyridine)-(4-carboxypropyl-2,2′-bipyridyl) iridium(III) hexafluorophosphate with nitrogen-doped carbon quantum dots (NCDs). The ECL intensity of the nanowires showed a five-fold increase in ECL intensity compared with the iridium complex monomer under the same experimental conditions. A label-free ECL biosensing platform based on Ir–NCDs was established for Salmonella enteritidis (SE) detection. The ECL signal was quenched linearly in the range of 102–108 CFU/mL for SE with a detection limit of 102 CFU/mL. Moreover, the relative standard deviations (RSD) of the stability within and between batches were 0.98% and 3.9%, respectively. In addition, the proposed sensor showed high sensitivity, selectivity and stability towards SE in sheep feces samples with satisfactory results. In summary, the excellent ECL efficiency of Ir–NCDs demonstrates the prospects for Ir(III) complexes in bioanalytical applications.

33

Suo, Guoquan, Shuai Jiang, Juntao Zhang, Jianye Li, and Meng He. "Synthetic Strategies and Applications of GaN Nanowires." Advances in Condensed Matter Physics 2014 (2014): 1–11. http://dx.doi.org/10.1155/2014/456163.

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GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

34

Polyakov, Alexander Y., Taehwan Kim, In‐Hwan Lee, and Stephen J. Pearton. "III‐Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes." physica status solidi (b) 256, no. 5 (February 21, 2019): 1800589. http://dx.doi.org/10.1002/pssb.201800589.

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35

Dubrovskii V. G. and Mikushev S. V. "Kinetics of radial growth of III-V nanowires in vapor phase epitaxy." Technical Physics Letters 48, no. 10 (2022): 71. http://dx.doi.org/10.21883/tpl.2022.10.54804.19340.

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A model is proposed for the radial growth of III-V nanowires (NWs) in vapor phase epitaxy on masked substrates, which provides explicitly the NW radius as a function of its length. Analytical solutions are obtained for the NW radius in different stages of growth. A comparison of the model with the data on the growth kinetics of GaAs NWs is presented and a good correlation with the data is demonstrated. Keywords: III-V nanowires, radial growth, vapor phase epitaxy, modeling.

36

Norris, Kate J., Junce Zhang, David M. Fryauf, Elane Coleman, Gary S. Tompa, and Nobuhiko P. Kobayashi. "Growth of Polycrystalline Indium Phosphide Nanowires on Copper." MRS Proceedings 1543 (2013): 131–36. http://dx.doi.org/10.1557/opl.2013.933.

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ABSTRACTOur nation discards more than 50% of the total input energy as waste heat in various industrial processes such as metal refining, heat engines, and cooling. If we could harness a small fraction of the waste heat through the use of thermoelectric (TE) devices while satisfying the economic demands of cost versus performance, then TE power generation could bring substantial positive impacts to our society in the forms of reduced carbon emissions and additional energy. To increase the unit-less figure of merit, ZT, single-crystal semiconductor nanowires have been extensively studied as a building block for advanced TE devices because of their predicted large reduction in thermal conductivity and large increase in power factor. In contrast, polycrystalline bulk semiconductors also indicate their potential in improving overall efficiency of thermal-to-electric conversion despite their large number of grain boundaries. To further our goal of developing practical and economical TE devices, we designed a material platform that combines nanowires and polycrystalline semiconductors which are integrated on a metallic surface. We will assess the potential of polycrystalline group III-V compound semiconductor nanowires grown on low-cost copper sheets that have ideal electrical/thermal properties for TE devices. We chose indium phosphide (InP) from group III-V compound semiconductors because of its inherent characteristics of having low surface states density in comparison to others, which is expected to be important for polycrystalline nanowires that contain numerous grain boundaries. Using metal organic chemical vapor deposition (MOCVD) polycrystalline InP nanowires were grown in three-dimensional networks in which electrical charges and heat travel under the influence of their characteristic scattering mechanisms over a distance much longer than the mean length of the constituent nanowires. We studied the growth mechanisms of polycrystalline InP nanowires on copper surfaces by analyzing their chemical, optical, and structural properties in comparison to those of single-crystal InP nanowires formed on single-crystal surfaces. We also assessed the potential of polycrystalline InP nanowires on copper surfaces as a TE material by modeling based on finite-element analysis to obtain physical insights of three-dimensional networks made of polycrystalline InP nanowires. Our discussion will focus on the synthesis of polycrystalline InP nanowires on copper surfaces and structural properties of the nanowires analyzed by transmission electron microscopy that provides insight into possible nucleation mechanisms, growth mechanisms, and the nature of grain boundaries of the nanowires.

37

Alekseev, Prokhor A., Mikhail S. Dunaevskiy, George E. Cirlin, Rodion R. Reznik, Alexander N. Smirnov, Demid A. Kirilenko, Valery Yu Davydov, and Vladimir L. Berkovits. "Unified mechanism of the surface Fermi level pinning in III-As nanowires." Nanotechnology 29, no. 31 (May 31, 2018): 314003. http://dx.doi.org/10.1088/1361-6528/aac480.

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38

Li, Botian, Da Xiao, Dongsheng Deng, Haimu Ye, Qiong Zhou, and Liming Tang. "A metal–organic gel based on Fe(iii) and bi-pyridine ligand for template synthesis of core/shell composite polymer nanowires." Soft Matter 14, no. 43 (2018): 8764–70. http://dx.doi.org/10.1039/c8sm01755g.

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39

Andjelkovic, Ivan, Sara Azari, Mason Erkelens, Peter Forward, Martin F. Lambert, and Dusan Losic. "Bacterial iron-oxide nanowires from biofilm waste as a new adsorbent for the removal of arsenic from water." RSC Advances 7, no. 7 (2017): 3941–48. http://dx.doi.org/10.1039/c6ra26379h.

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Biofilm waste material generated by the bacteria in the groundwater pipelines was found is composed of amorphous twisted iron-oxide nanowires which are shown to have considerable adsorption properties for removal As(iii) and As(v) ions from waters.

40

Tabrizi, Leila, and Hossein Chiniforoshan. "Sonochemical synthesis of Au nanowires in the III–I oxidation state bridged by 4,4′-dicyanamidobiphenyl and their application as selective CO gas sensors." Dalton Transactions 44, no. 5 (2015): 2488–95. http://dx.doi.org/10.1039/c4dt03427a.

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41

Kim, Sung-Un, and Yong-Ho Ra. "Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures." Nanomaterials 11, no. 1 (December 23, 2020): 9. http://dx.doi.org/10.3390/nano11010009.

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One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of high concentration indium gallium nitride (InGaN) and long-InGaN structures remains still challenging. In this study, we performed simulations for structural modeling of uniform temperature distribution in a nanowire epitaxy, and have successfully developed high-concentration InGaN and long-InGaN nanowire heterostructures on silicon (Si) substrate using molecular beam epitaxy (MBE) system. From scanning electron microscope (SEM) and transmission electron microscope (TEM) results, it was confirmed that the various doped-InGaN nanowire structures show much higher crystal quality compared to conventional nanowire structures. By introducing a new three-step modulated growth technique, the n-/p-InGaN active regions were greatly increased and the optical properties were also dramatically improved due to reduced phase separation. In addition, a multi-band p-InGaN/GaN heterostructure was successfully fabricated with the core–shell nanowire structures, which enable the emission of light in the entire visible spectral range, and protect the InGaN surface from surface recombination. This paper offers important insight into the design and epitaxial growth of InGaN nanowire heterostructures.

42

Petrov, Vladimir, Zhong Chen, Anna Romanchuk, Valeria Demina, Yuxin Tang, and Stepan Kalmykov. "Sorption of Eu (III) onto Nano-Sized H-Titanates of Different Structures." Applied Sciences 9, no. 4 (February 18, 2019): 697. http://dx.doi.org/10.3390/app9040697.

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Hydrogen titanates (H-titanates) of different nanostructures (nanotubes, nanowires, nanosheets) have been synthesized by hydrothermal methods. The europium (III) sorption from aqueous solutions onto nano-sized H-titanates was studied as a function of contact time, pH values, and initial Eu (III) concentration in batch experiments. Reversibility of adsorption of europium has been investigated as well. Nano-sized H-titanates can be used for tri-valent f-elements removal in polluted water treatment due to fast and efficient sorption of Eu (III).

43

Резник, Р. Р., В. О. Гридчин, К. П. Котляр, А. И. Хребтов, Е. В. Убыйвовк, С. В. Микушев, D. Li та ін. "Формирование InGaAs-квантовых точек в теле AlGaAs-нитевидных нанокристаллов при молекулярно-пучковой эпитаксии". Физика и техника полупроводников 56, № 7 (2022): 689. http://dx.doi.org/10.21883/ftp.2022.07.52761.16.

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The results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InGaAs quantum dots are presented. It was shown that, as in the case of the InP/InAsP material system, the formation of predominantly two objects is observed in the body of AlGaAs nanowire: InGaAs quantum dot due to axial growth and InGaAs quantum well due to radial growth. It is important to note that the grown nanostructures were formed predominantly in the wurtzite crystallographic phase. The results of the grown nanostructures physical properties studies indicate that they are promising for moving single-photon sources to the long-wavelength region. The proposed technology opens up new possibilities for integration direct-gap III−V materials with a silicon platform for various applications in photonics and quantum communications.

44

Heiss, Martin, Bernt Ketterer, Emanuele Uccelli, Joan Ramon Morante, Jordi Arbiol, and Anna Fontcuberta i. Morral. "In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires." Nanotechnology 22, no. 19 (March 23, 2011): 195601. http://dx.doi.org/10.1088/0957-4484/22/19/195601.

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45

Venkatesan, Sriram, Morten H. Madsen, Herbert Schmid, Peter Krogstrup, Erik Johnson, and Christina Scheu. "Direct observation of interface and nanoscale compositional modulation in ternary III-As heterostructure nanowires." Applied Physics Letters 103, no. 6 (August 5, 2013): 063106. http://dx.doi.org/10.1063/1.4818338.

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46

Rao, C. N. R., Ved Varun Agrawal, Kanishka Biswas, Ujjal K. Gautam, Moumita Ghosh, A. Govindaraj, G. U. Kulkarni, K. P. Kalyanikutty, Kripasindhu Sardar, and S. R. C. Vivekchand. "Soft chemical approaches to inorganic nanostructures." Pure and Applied Chemistry 78, no. 9 (January 1, 2006): 1619–50. http://dx.doi.org/10.1351/pac200678091619.

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Chemical approaches have emerged as the preferred means to synthesize nanostructures of various inorganic materials due to superior control over size, shape, and surface functionality. This article provides an overview of the contributions made in the authors' laboratory toward the synthesis of nanocrystals, nanowires, nanotubes, nanowalls, and other nanostructures of several inorganic materials. Thus, thiolized monodisperse metal nanocrystals have been obtained by a ligand exchange process and the stability of their 2D assemblies studied. Nanocrystals of pure CoO and ReO3 have been synthesized, for the first time, employing a one-pot solvothermal technique. The solvothermal method has also been used to obtain organic soluble nanocrystals of semiconducting materials such as CdS, CdSe, and GaN. Inorganic nanowires and nanotubes have been prepared by several soft chemical routes, including surfactant-assisted synthesis and hydrogel templating. A simple reaction between elemental Se and Te with NaBH4 in water has been utilized to obtain nanowires of Se and Te. We also describe the nebulized spray pyrolysis (NSP) technique to synthesize carbon nanotubes and nanowires of metals and III-V nitride semiconductors with improved yields. An important new technique for preparing nanocrystalline films of materials is by the reaction of the metal precursors in the organic layer at the interface of two immiscible liquids, with appropriate reagents. Nanocrystalline films of metals, alloys, and semiconductors and ultra-thin single-crystalline films of metal chalcogenides and oxides have been obtained by this technique. Apart from these, we discuss single precursor routes to iron sulfide, GeSe2, and III-V nitride nanostructures as well as the first synthesis of GaS and GaSe nanowalls and nanotubes obtained through exfoliation by laser irradiation and thermal treatment.

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Satoungar, Mohammad Taghi, Hamed Azizi, Saeid Fattahi, Mohammad Khajeh Mehrizi, and Hedieh Fallahi. "Effect of Different Mediated Agents on Morphology and Crystallinity of Synthesized Silver Nanowires Prepared by Polyol Process." Journal of Nanomaterials 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/4354136.

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Synthesis and characterization of multiple crystalline silver nanowires (NWs) with uniform diameters were carried out by using 1,2-propandiol and ethylene glycol (EG) as comediated solvents and FeCl3as mediated agent in the presence of poly(vinyl pyrrolidone) (PVP). Experimental data and structural characterizations revealed that AgNWs have evolved from the multiple crystalline seeds initially generated by reduction of AgNO3with EG and 1,2-propandiol followed by reducing Fe(III) to Fe(II) which in turn reacts with and removes adsorbed atomic oxygen from the surfaces of silver seeds. In addition, uniform silver nanowires were obtained by using FeCl2and AlCl3as mediated agents in EG solution. Field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) showed uniform nanowires in both diameter and length. UV-Vis spectra showed adsorption peaks confirming the formation of nanowires. X-ray diffraction (XRD) patterns displayed the final product with high crystallinity and purity. In this study, a growth mechanism for forming AgNWs was proposed and a comparison between different mediated agents was carried out.

48

Floris, Francesco, Lucia Fornasari, Vittorio Bellani, Andrea Marini, Francesco Banfi, Franco Marabelli, Fabio Beltram, et al. "Strong Modulations of Optical Reflectance in Tapered Core–Shell Nanowires." Materials 12, no. 21 (October 31, 2019): 3572. http://dx.doi.org/10.3390/ma12213572.

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Random assemblies of vertically aligned core–shell GaAs–AlGaAs nanowires displayed an optical response dominated by strong oscillations of the reflected light as a function of the incident angle. In particular, angle-resolved specular reflectance measurements showed the occurrence of periodic modulations in the polarization-resolved spectra of reflected light for a surprisingly wide range of incident angles. Numerical simulations allowed for identifying the geometrical features of the core–shell nanowires leading to the observed oscillatory effects in terms of core and shell thickness as well as the tapering of the nanostructure. The present results indicate that randomly displaced ensembles of nanoscale heterostructures made of III–V semiconductors can operate as optical metamirrors, with potential for sensing applications.

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Kannappan, Perumal, Nabiha Ben Sedrine, Jennifer P. Teixeira, Maria R. Soares, Bruno P. Falcão, Maria R. Correia, Nestor Cifuentes, et al. "Substrate and Mg doping effects in GaAs nanowires." Beilstein Journal of Nanotechnology 8 (October 11, 2017): 2126–38. http://dx.doi.org/10.3762/bjnano.8.212.

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Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE) on GaAs(111)B and Si(111) substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i) a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii) a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111); iii) the occurrence of a higher WZ phase fraction, in particular for growth on Si(111); iv) an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111)B; and v) a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111). Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2 /Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111) substrate is suggested.

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Chen, Guobao, Zhangfu Zhu, and Yong Qin. "Synthesis of Pure Micro- and Nanopyrite and Their Application for As (III) Removal from Aqueous Solution." Advances in Materials Science and Engineering 2016 (2016): 1–6. http://dx.doi.org/10.1155/2016/6290420.

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Arsenic is one of the materials that has a worldwide concern because of its high toxicity and chronic effects on human health. The existence of arsenic as As (III) is about 56 times poisonous as As (V) and more difficult to process. The investigation takes the pyrite as an adsorbent to remove As (III) from waste water. Different morphology and granularity of pyrite were synthesized by hydrothermal and liquid-phase precipitation methods, respectively. The findings show that the addition of pyrite nanoparticles to the solution provided highest As (III) removal efficiency of 88.53%. 1 gL−1pyrite nanoparticles can reduce the concentration of arsenite in the waste water from an initial As content of 30 mgL−1to 3.4 mgL−1at pH 11. Under the similar operating conditions, the synthetic micropyrite and natural pyrite have a lower As (III) removal; both were less than 70%. In addition, the synthetic pyrite nanowires obtained 86.70% removal efficiency of arsenite. The results confirmed that the morphology and granularity of pyrite can significantly influence the adsorption of arsenite removal from aqueous solution.

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