Добірка наукової літератури з теми "III-As nanowires"
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Статті в журналах з теми "III-As nanowires":
Mastro, Michael A., Neeraj Nepal, Fritz Kub, Jennifer K. Hite, Jihyun Kim, and Charles R. Eddy. "Nickel Foam as a Substrate for III-nitride Nanowire Growth." MRS Proceedings 1538 (2013): 311–16. http://dx.doi.org/10.1557/opl.2013.504.
Leshchenko E. D. and Dubrovskii V. G. "Modeling the growth of tapered nanowires on reflecting substrates." Technical Physics Letters 48, no. 12 (2022): 11. http://dx.doi.org/10.21883/tpl.2022.12.54937.19358.
Dubrovskii, Vladimir G., and Egor D. Leshchenko. "Modeling the Radial Growth of Self-Catalyzed III-V Nanowires." Nanomaterials 12, no. 10 (May 16, 2022): 1698. http://dx.doi.org/10.3390/nano12101698.
GAO, Q., H. J. JOYCE, S. PAIMAN, J. H. KANG, H. H. TAN, Y. KIM, L. M. SMITH, et al. "III-V COMPOUND SEMICONDUCTOR NANOWIRES FOR OPTOELECTRONIC DEVICE APPLICATIONS." International Journal of High Speed Electronics and Systems 20, no. 01 (March 2011): 131–41. http://dx.doi.org/10.1142/s0129156411006465.
Лещенко, Е. Д., та В. Г. Дубровский. "Моделирование роста заостренных нитевидных нанокристаллов на маскированных подложках". Письма в журнал технической физики 48, № 23 (2022): 14. http://dx.doi.org/10.21883/pjtf.2022.23.53945.19358.
Yip, Sen Po, Wei Wang, and Johnny C. Ho. "(Invited, Digital Presentation) Ternary III-Sb Nanowires: Synthesis and Their Electronic and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 36 (October 9, 2022): 1306. http://dx.doi.org/10.1149/ma2022-02361306mtgabs.
Saleem, Samra, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed, and Muhammad Asghar. "Phase Control Growth of InAs Nanowires by Using Bi Surfactant." Coatings 12, no. 2 (February 15, 2022): 250. http://dx.doi.org/10.3390/coatings12020250.
Kang, Sung Bum, Rahul Sharma, Minhyeok Jo, Su In Kim, Jeongwoo Hwang, Sang Hyuk Won, Jae Cheol Shin, and Kyoung Jin Choi. "Catalysis-Free Growth of III-V Core-Shell Nanowires on p-Si for Efficient Heterojunction Solar Cells with Optimized Window Layer." Energies 15, no. 5 (February 28, 2022): 1772. http://dx.doi.org/10.3390/en15051772.
Дубровский, В. Г., А. С. Соколовский та И. В. Штром. "Свободная энергия образования зародыша при росте III-V нитевидного нанокристалла". Письма в журнал технической физики 46, № 18 (2020): 3. http://dx.doi.org/10.21883/pjtf.2020.18.49991.18401.
Demontis, Valeria, Valentina Zannier, Lucia Sorba, and Francesco Rossella. "Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays." Nanomaterials 11, no. 8 (August 16, 2021): 2079. http://dx.doi.org/10.3390/nano11082079.
Дисертації з теми "III-As nanowires":
Hölzel, Sara Sibylle [Verfasser]. "Group III-Nitride Nanowires as Multifunctional Optical Biosensors / Sara Sibylle Hölzel." Gießen : Universitätsbibliothek, 2018. http://d-nb.info/1173615059/34.
Hölzel, Sara [Verfasser]. "Group III-Nitride Nanowires as Multifunctional Optical Biosensors / Sara Sibylle Hölzel." Gießen : Universitätsbibliothek, 2018. http://d-nb.info/1173615059/34.
Chereau, Emmanuel. "Synthèse et modélisation de nanofils III-As par SAG-HVPE : vers des dispositifs pour l'infrarouge et la conversion d'énergie." Electronic Thesis or Diss., Université Clermont Auvergne (2021-...), 2024. http://www.theses.fr/2024UCFA0020.
This work focuses on the selective area growth (SAG) of III-As nanowires (NWs) by hydride vapor-phase epitaxy (HVPE). First, we have studied the SAG of GaAs NWs on GaAs substrates. Systematic studies according to growth conditions have demonstrated a growth suppression effect under arsenic-rich atmosphere. These observations were supported by a kinetic model which, for the first time in HVPE, takes into account the diffusion of Ga adatoms on the NWs side facets. Then, a preliminary study of the doping of NWs was carried out, as well as the growth of p-i-n junctions in NWs. The results are encouraging regarding the fabrication of NW-based devices by HVPE. Secondly, we have studied the SAG of InAs and InGaAs on GaAs and Si substrates. It turned out that growth suppression also occurs for InAs NWs. As for InGaAs, NW arrays with various compositions have been successfully obtained. A growth model was developed revealing that the NWs composition is controlled by growth kinetics rather than thermodynamic factors. This greatly simplifies the control of the composition across a wide range of HVPE parameters. These results show the capability of HVPE for the fabrication of homogeneous InGaAs NW arrays with widely tunable compositions
Burgess, Timothy. "From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy." Phd thesis, 2017. http://hdl.handle.net/1885/144611.
Частини книг з теми "III-As nanowires":
Shilla, Pooja, Raj Kumar, and Arvind Kumar. "III-V-Based Gate-All-Around Cylindrical Nanowire Junctionless Field Effect Transistor." In Advances in Computer and Electrical Engineering, 101–21. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch005.
Routray, Soumyaranjan, and Trupti Lenka. "III-Nitride Nanowires: Future Prospective for Photovoltaic Applications." In Nanowires - Recent Progress [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.95011.
Takele Geldasa, Fikadu. "Solar Energy Conversion Efficiency, Growth Mechanism and Design of III–V Nanowire-Based Solar Cells: Review." In Advances in Nanowires Synthesis and Applications to Sensing Technologies [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.105985.
Nguyen, Hoang-Duy, Mano Bala Sankar Muthu, and Hieu Pham Trung Nguyen. "Phosphor-Converted III-Nitride Nanowire White Light-Emitting Diodes." In Nanoelectronic Devices and Applications, 72–89. BENTHAM SCIENCE PUBLISHERS, 2024. http://dx.doi.org/10.2174/9789815238242124010005.
Kumar, Raj, Shashi Bala, and Arvind Kumar. "Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors." In Advances in Computer and Electrical Engineering, 54–70. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch003.
Bala, Shashi, Raj Kumar, Jeetendra Singh, and Sanjeev Kumar Sharma. "Design and Simulation Analysis of NWFET for Digital Application." In Advances in Computer and Electrical Engineering, 123–38. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch006.
Тези доповідей конференцій з теми "III-As nanowires":
Saerens, G., I. Tang, E. Bloch, K. Frizyuk, M. Reig Escalé, C. Renaut, F. Timpu, et al. "Semiconductor III-V Nanowires as Building Blocks for Flexible Nonlinear Photonic Components." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_qels.2020.ftu3q.3.
Liu, Wenjun, Yizhang Yang, and Mehdi Asheghi. "Thermal Characterization of Silicon Nanowires." In ASME 4th Integrated Nanosystems Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/nano2005-87063.
Florini, Nikoletta. "Core-shell nanowires based on III-V alloys: Strain distribution as a function of structure and composition." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.1230.
Lyeo, Ho-Ki, C. K. Ken Shih, Uttam Ghoshal, and Li Shi. "Thermoelectric Mapping of Nanostructures." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-32766.
Kleindienst, R., V. Cimalla, M. Eickhoff, A. Grewe, K. Holc, J. Schätzle, U. Schwarz, J. Teubert, and S. Sinzinger. "Micro-optical system as integration platform for III-N nanowire based opto-chemical detectors." In SPIE MOEMS-MEMS, edited by Georg von Freymann, Winston V. Schoenfeld, and Raymond C. Rumpf. SPIE, 2013. http://dx.doi.org/10.1117/12.2002411.
Geelhaar, L. "(Invited) Nanowire Growth as a Means for the Monolithic Integration of III-V Compound Semiconductors on Si." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.d-6-1.
Stellari, Franco, Alan J. Weger, Seongwon Kim, Dzmitry Maliuk, Peilin Song, Herschel A. Ainspan, Young Kwark, et al. "A Superconducting Nanowire Single-Photon Detector (SnSPD) System for Ultra Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuits." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0182.
Romero, David A., Elham Pakseresht, Daniel Sellan, Aydin Nabovati, and Cristina Amon. "A Hierarchical Framework for Thermal Modelling of Electronic Devices: From Atoms to Chips." In ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ipack2013-73202.