Статті в журналах з теми "IGBT power modules"
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Flores, David, Salvador Hidalgo, and Jesús Urresti. "New generation of 3.3kV IGBTs with monolitically integrated voltage and current sensors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 213–21. http://dx.doi.org/10.2298/fuee1502213f.
Повний текст джерелаFu, Xiao Jin, Chun Lan Que, Shuai Zhang, En Xing Yang, and Hang Ye. "The Design of Parallel IGBT Modular for Modularized Wind Power Converter." Applied Mechanics and Materials 734 (February 2015): 873–76. http://dx.doi.org/10.4028/www.scientific.net/amm.734.873.
Повний текст джерелаLi, Cui, Yao Sheng Li, Jun Xu Liu, Hua Qiang Shao, Zhong yuan Chen, and Jin Yuan Li. "Research on performance parameter degradation of high voltage and high power IGBT module in power cycling test." Journal of Physics: Conference Series 2290, no. 1 (June 1, 2022): 012041. http://dx.doi.org/10.1088/1742-6596/2290/1/012041.
Повний текст джерелаWang, Yan Gang, Dinesh Chamund, Shi Ping Li, Kevin Wu, Steve Jones, and Gary Liu. "Lifetime Prediction for Power IGBT Modules in Metro Traction Systems." Advanced Materials Research 846-847 (November 2013): 724–31. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.724.
Повний текст джерелаLevchuk, Svetlana, Monika Poebl, and Gerhard Mitic. "Diamond Composites for Power Electronics Application." Advanced Materials Research 59 (December 2008): 143–47. http://dx.doi.org/10.4028/www.scientific.net/amr.59.143.
Повний текст джерелаZheng, Qing Yuan, Min You Chen, Bing Gao, and Nan Jiang. "Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model." Advanced Materials Research 986-987 (July 2014): 823–27. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.823.
Повний текст джерелаWu, Yi Bo, Guo You Liu, Ning Hua Xu, and Ze Chun Dou. "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density." Applied Mechanics and Materials 303-306 (February 2013): 1902–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1902.
Повний текст джерелаShen, Bing, and Yifa Sheng. "Research on junction temperature monitoring technology of IGBT modules." Journal of Physics: Conference Series 2378, no. 1 (December 1, 2022): 012043. http://dx.doi.org/10.1088/1742-6596/2378/1/012043.
Повний текст джерелаSkibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.
Повний текст джерелаJo, Kim, Cho, and Lee. "Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules." Electronics 8, no. 10 (October 7, 2019): 1127. http://dx.doi.org/10.3390/electronics8101127.
Повний текст джерелаWang, Lei, Mingchao Zhou, Zhonghao Dongye, Yanbei Sha, and Jingcao Chen. "A Condition Evaluation Simplified Method for Traction Converter Power Module Based on Operating Interval Segmentation." Sensors 23, no. 5 (February 24, 2023): 2537. http://dx.doi.org/10.3390/s23052537.
Повний текст джерелаCova, P., M. Ciappa, G. Franceschini, P. Malberti, and F. Fantini. "Thermal characterization of IGBT power modules." Microelectronics Reliability 37, no. 10-11 (October 1997): 1731–34. http://dx.doi.org/10.1016/s0026-2714(97)00150-9.
Повний текст джерелаWang, Chenyuan, Yigang He, Chuankun Wang, Lie Li, and Xiaoxin Wu. "Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration." Electronics 9, no. 10 (September 23, 2020): 1559. http://dx.doi.org/10.3390/electronics9101559.
Повний текст джерелаFu, Shancan, Guoliang Wang, and Feng Xiao. "Degradation Behavior of High Power Semiconductor Modules by Low-Temperature Sintering Technology." Journal of Physics: Conference Series 2370, no. 1 (November 1, 2022): 012012. http://dx.doi.org/10.1088/1742-6596/2370/1/012012.
Повний текст джерелаSharma, Yogesh, P. Mumby-Croft, L. Ngwendson, M. Packwood, L. Coulbeck, M. Birkett, C. Kong, H. Jiang, Y. Wang, and I. Deviny. "6.5 kV Si/SiC Hybrid Power Module Technology." Materials Science Forum 963 (July 2019): 859–63. http://dx.doi.org/10.4028/www.scientific.net/msf.963.859.
Повний текст джерелаAbdalgader, Ibrahim A. S., Sinan Kivrak, and Tolga Özer. "Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications." Micromachines 13, no. 2 (February 17, 2022): 313. http://dx.doi.org/10.3390/mi13020313.
Повний текст джерелаLi, Bin, Ke Qing Xiong, Yi Sun, and Bing Qi. "Safety P-Cycle Protection Mechanism for Smart Power Device." Advanced Materials Research 804 (September 2013): 228–32. http://dx.doi.org/10.4028/www.scientific.net/amr.804.228.
Повний текст джерелаParker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash, and Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.
Повний текст джерелаLiu, Xingliang, Guiyun Tian, Yu Chen, Haoze Luo, Jian Zhang, and Wuhua Li. "Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach." Energies 13, no. 10 (May 21, 2020): 2613. http://dx.doi.org/10.3390/en13102613.
Повний текст джерелаPark, C., M. J. Mauger, T. Damle, J. Huh, S. Steinhoff, and L. Graber. "Cryogenic Power Electronics: Press-Pack IGBT Modules." IOP Conference Series: Materials Science and Engineering 756 (June 30, 2020): 012009. http://dx.doi.org/10.1088/1757-899x/756/1/012009.
Повний текст джерелаBoettcher, Lars, S. Karaszkiewicz, D. Manessis, and A. Ostmann. "Development of Embedded High Power Electronics Modules for Automotive Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (January 1, 2013): 001717–43. http://dx.doi.org/10.4071/2013dpc-wp35.
Повний текст джерелаImaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, and Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." Materials Science Forum 527-529 (October 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.
Повний текст джерелаMorozumi, A., K. Yamada, T. Miyasaka, S. Sumi, and Y. Seki. "Reliability of power cycling for igbt power semiconductor modules." IEEE Transactions on Industry Applications 39, no. 3 (May 2003): 665–71. http://dx.doi.org/10.1109/tia.2003.810661.
Повний текст джерелаMelnikov, V., O. Talipov, and Yu Kibartene. "EVALUATING THE POSSIBILITY OF APPLYING CONTROLLED COMPENSATION SYSTEMS TO IMPROVE EFFICIENCY IN ELECTRIC GRIDS." Bulletin of Toraighyrov University. Energetics series, no. 2021.3 (September 11, 2021): 83–92. http://dx.doi.org/10.48081/jbmz50037.
Повний текст джерелаZhang, Jingxuan, Hexu Sun, Zexian Sun, Yan Dong, and Weichao Dong. "Open-Circuit Fault Diagnosis of Wind Power Converter Using Variational Mode Decomposition, Trend Feature Analysis and Deep Belief Network." Applied Sciences 10, no. 6 (March 21, 2020): 2146. http://dx.doi.org/10.3390/app10062146.
Повний текст джерелаAgunov, A. V., A. T. Burkov, V. G. Zhemchugov, and K. K. Stepanova. "Energy efficiency of power electronics converters in traction power supply networks at voltage increase." Journal of Physics: Conference Series 2131, no. 4 (December 1, 2021): 042094. http://dx.doi.org/10.1088/1742-6596/2131/4/042094.
Повний текст джерелаAbbate, Carmine, and Roberto Di Folco. "High Frequency Behavior of High Power IGBT Modules." Universal Journal of Electrical and Electronic Engineering 3, no. 1 (January 2015): 17–23. http://dx.doi.org/10.13189/ujeee.2015.030104.
Повний текст джерелаAzar, R., F. Udrea, M. DeSilva, G. Amaratunga, W. T. Ng, F. Dawson, W. Findlay, and P. Waind. "Advanced SPICE Modeling of Large Power IGBT Modules." IEEE Transactions on Industry Applications 40, no. 3 (May 2004): 710–16. http://dx.doi.org/10.1109/tia.2004.827456.
Повний текст джерелаLuo, Dan, Minyou Chen, Wei Lai, Hongjian Xia, Zhenyu Deng, Zhi Wang, and Kai Yu. "A Fault Detection Method of IGBT Bond Wire Fatigue Based on the Reduction of Measured Heatsink Thermal Resistance." Electronics 11, no. 7 (March 24, 2022): 1021. http://dx.doi.org/10.3390/electronics11071021.
Повний текст джерелаKrainyukov, Alexander, and Valery Kutev. "Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation." Transport and Telecommunication Journal 16, no. 3 (September 1, 2015): 217–23. http://dx.doi.org/10.1515/ttj-2015-0020.
Повний текст джерелаChen, Ming, An Hu, Yong Tang, and Bo Wang. "SABER-Based Simulation for Compact Dynamic Electro-Thermal Modeling Analysis of Power Electronic Devices." Advanced Materials Research 291-294 (July 2011): 1704–8. http://dx.doi.org/10.4028/www.scientific.net/amr.291-294.1704.
Повний текст джерелаLuo, Bing Yang, Yi Min Mo, Wen Lu Zhang, and Si Ning Liu. "Study Temperature and Humidity Influence on High-Power IGBT." Applied Mechanics and Materials 325-326 (June 2013): 499–502. http://dx.doi.org/10.4028/www.scientific.net/amm.325-326.499.
Повний текст джерелаBöttcher, Lars, S. Karaszkiewicz, D. Manessis, Eckart Hoene, and A. Ostmann. "Next Generation High Power Electronic Modules Based on Embedded Power Semiconductors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (January 1, 2014): 000694–719. http://dx.doi.org/10.4071/2014dpc-tp12.
Повний текст джерелаZhou, Shengqi, Luowei Zhou, Suncheng Liu, Pengju Sun, Quanming Luo, and Junke Wu. "The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module." Active and Passive Electronic Components 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/309789.
Повний текст джерелаGhimire, Pramod, Angel Ruiz de Vega, Szymon Beczkowski, Bjorn Rannestad, Stig Munk-Nielsen, and Paul Thogersen. "Improving Power Converter Reliability: Online Monitoring of High-Power IGBT Modules." IEEE Industrial Electronics Magazine 8, no. 3 (September 2014): 40–50. http://dx.doi.org/10.1109/mie.2014.2311829.
Повний текст джерелаChen, Nan, Filippo Chimento, Muhammad Nawaz, and Liwei Wang. "Dynamic Characterization of Parallel-Connected High-Power IGBT Modules." IEEE Transactions on Industry Applications 51, no. 1 (January 2015): 539–46. http://dx.doi.org/10.1109/tia.2014.2330075.
Повний текст джерелаAbbate, C., G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, and R. Manzo. "The robustness of series-connected high power IGBT modules." Microelectronics Reliability 47, no. 9-11 (September 2007): 1746–50. http://dx.doi.org/10.1016/j.microrel.2007.07.036.
Повний текст джерелаQian, Cheng, Amir Mirza Gheitaghy, Jiajie Fan, Hongyu Tang, Bo Sun, Huaiyu Ye, and Guoqi Zhang. "Thermal Management on IGBT Power Electronic Devices and Modules." IEEE Access 6 (2018): 12868–84. http://dx.doi.org/10.1109/access.2018.2793300.
Повний текст джерелаLefranc, G., T. Licht, H. J. Schultz, R. Beinert, and G. Mitic. "Reliability testing of high-power multi-chip IGBT modules." Microelectronics Reliability 40, no. 8-10 (August 2000): 1659–63. http://dx.doi.org/10.1016/s0026-2714(00)00185-2.
Повний текст джерелаBELYAEV, A. V., and R. N. POLYAKOV. "ANALYSIS OF THE RELIABLE STATE OF POWER ELECTRONICS BY CONTROL OF THERMAL ELECTRIC PARAMETERS." Fundamental and Applied Problems of Engineering and Technology 2 (2021): 172–77. http://dx.doi.org/10.33979/2073-7408-2021-346-2-172-177.
Повний текст джерелаScofield, James D., Joseph Neil Merrett, Jim Richmond, Anant K. Agarwal, and Scott Leslie. "Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules." Materials Science Forum 645-648 (April 2010): 1119–22. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1119.
Повний текст джерелаLuo, Dan, Minyou Chen, Wei Lai, Hongjian Xia, Xueni Ding, and Zhenyu Deng. "A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement." Electronics 10, no. 2 (January 15, 2021): 194. http://dx.doi.org/10.3390/electronics10020194.
Повний текст джерелаHasan, Md Nazmul, Timothy Polom, Dominik Holzmann, Perla Malagó, Alfred Binder, and Ali Roshanghias. "Evaluating Cu Printed Interconnects “Sinterconnects” versus Wire Bonds for Switching Converters." Electronics 11, no. 9 (April 25, 2022): 1373. http://dx.doi.org/10.3390/electronics11091373.
Повний текст джерелаHasan, Md Nazmul, Timothy Polom, Dominik Holzmann, Perla Malagó, Alfred Binder, and Ali Roshanghias. "Evaluating Cu Printed Interconnects “Sinterconnects” versus Wire Bonds for Switching Converters." Electronics 11, no. 9 (April 25, 2022): 1373. http://dx.doi.org/10.3390/electronics11091373.
Повний текст джерелаYonezawa, Yoshiyuki, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, T. Deguchi, Tomohisa Kato, Shinsuke Harada, et al. "Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs." Materials Science Forum 821-823 (June 2015): 842–46. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.842.
Повний текст джерелаLoganathan, P., and P. Selvam. "Amalgam Illogical Controller Design Using Amended Moth System for Heat Reduction in Insulated Gate Bipolar Transistor." International Journal of Mathematics and Computers in Simulation 16 (June 25, 2022): 67–75. http://dx.doi.org/10.46300/9102.2022.16.11.
Повний текст джерелаDenk, Marco, and Mark-M. Bakran. "Online Junction Temperature Cycle Recording of an IGBT Power Module in a Hybrid Car." Advances in Power Electronics 2015 (March 2, 2015): 1–14. http://dx.doi.org/10.1155/2015/652389.
Повний текст джерелаWani, Faisal, Udai Shipurkar, Jianning Dong, and Henk Polinder. "Thermal Cycling in Converter IGBT Modules with Different Cooling Systems in Pitch- and Active Stall-Controlled Tidal Turbines." Energies 14, no. 20 (October 9, 2021): 6457. http://dx.doi.org/10.3390/en14206457.
Повний текст джерелаWani, Faisal, Udai Shipurkar, Jianning Dong, Henk Polinder, Antonio Jarquin-Laguna, Kaswar Mostafa, and George Lavidas. "Lifetime Analysis of IGBT Power Modules in Passively Cooled Tidal Turbine Converters." Energies 13, no. 8 (April 12, 2020): 1875. http://dx.doi.org/10.3390/en13081875.
Повний текст джерелаPeng, Xi, Sheng Yin, and Yingqin Zou. "Research on dynamic current sharing method of parallel connected IGBT modules for NPC three level converters." Journal of Physics: Conference Series 2113, no. 1 (November 1, 2021): 012055. http://dx.doi.org/10.1088/1742-6596/2113/1/012055.
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