Дисертації з теми "IGBT power modules"
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Wang, Yalan. "Controlled switching of high power IGBT/diode modules." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613291.
Повний текст джерелаSignorello, Concetta. "Reduction of Switching Losses in IGBT Power Modules." Doctoral thesis, Università di Catania, 2015. http://hdl.handle.net/10761/4056.
Повний текст джерелаJoyce, John Charles. "Current sharing and redistribution in high power IGBT modules." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621350.
Повний текст джерелаCiappa, Mauro P. M. "Some reliability aspects of IGBT modules for high-power applications /." Zürich, 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13790.
Повний текст джерелаXiao, Di. "On Modern IGBT Modules: Characterization, Reliability and Failure Mechanisms." Thesis, Norwegian University of Science and Technology, Department of Electrical Power Engineering, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-10932.
Повний текст джерелаThe increased demand of offshore power conversion systems is driven by newly initiated offshore projects for wind farms and oil production. Because of long distances to shore and inaccessibility of the equipment long repair times must be expected. At the same time the offshore environment is extremely harsh. Thus, high reliability is required for the converters and it is important to have good knowledge of the switching devices. This thesis investigates switching characteristics and losses of commercially available IGBT modules to be used for this application. It focuses on switching time and switching energy losses depending on gate resistance, current and voltage levels, operation temperatures, and show differences between several devices of the same type. Some test show how device characteristics and losses when the device has been exposed to stress over a certain period.
Ji, Bing. "In-situ health monitoring of IGBT power modules in EV applications." Thesis, University of Newcastle Upon Tyne, 2012. http://hdl.handle.net/10443/1474.
Повний текст джерелаYaqub, Imran. "Investigation into stable failure to short circuit in IGBT power modules." Thesis, University of Nottingham, 2015. http://eprints.nottingham.ac.uk/30305/.
Повний текст джерелаSmet, Vanessa. "Aging and failure modes of IGBT power modules undergoing power cycling in high temperature environments." Thesis, Montpellier 2, 2010. http://www.theses.fr/2010MON20075/document.
Повний текст джерелаThis thesis is dedicated to reliability investigations led on three-phase 200~A~--~600~V IGBT power modules, designed for building drive inverters for hybrid or electric automotive traction applications. The objective was to evaluate the durability of the studied modules when they withstand power cycling in high temperature environments, and especially their resistance to thermo-mechanical fatigue. Two complementary approaches were considered: accelerated aging experiments and numerical modeling.A series of power cycling tests was carried out over a large range of temperature profiles, defined by the ambient temperature and IGBT junction temperature excursion. These quantities are used as thermal stress acceleration factors. Those experiments were led in realistic electrical conditions (PWM control scheme). They aimed at identifying the failure modes of the target devices, assessing the impact of the acceleration factors on their aging process, and evaluating the suitability of standard aging indicators as damage precursors in such harsh loading conditions. Besides, to better understand the failure mechanisms governing the fatigue life of the modules assembly, a thermo-mechanical modeling focusing on solder joints was built. Our simulation efforts concentrated on the appraisal of constitutive modeling effects on solder joints lifetime estimation. Numerical analysis of the assembly response to power cycling in similar operating conditions as practiced in experiments were performed. Behavior laws were then compared on stress, plastic strain, and strain energy density developed within the joints
Azar, Ramy. "A novel electro-thermal IGBT model for the design and analysis of large power IGBT modules in the spice environment." Thesis, University of Cambridge, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.619985.
Повний текст джерелаBelmehdi, Yassine. "Contribution à l'identification de nouveaux indicateurs de défaillance des modules de puissance à IGBT." Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14258/document.
Повний текст джерелаPower electronics has a role increasingly growing up in transport:electric and hybrid vehicles, trains and aircraft. For these applications, security is a critical point, thus the reliability of the power assembly must be optimized. The knowledge of time to failure is very important information for the designers of these systems. Inthis context, an early failure indicator would predict system failuresbefore it becomes effective. In this thesis, we focused on the electromechanical characterization of power transistors: MOSFET and IGBT. Based on these results this electromechanical characterization should help us in the longer term, to highlight an early failure indicator of the power assembly
Dbeiss, Mouhannad. "Mission Profile-Based Accelerated Ageing Tests of SiC MOSFET and Si IGBT Power Modules in DC/AC Photovoltaic Inverters." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT020/document.
Повний текст джерелаIn the case of photovoltaic installations, the DC/AC inverter has the highest failure rate, and the anticipation of its breakdowns is still difficult, while few studies have been done on the reliability of this type of inverter. The aim of this PhD is to propose tools and methods to study the ageing of power modules in this type of application, by focusing on ageing phenomena related to thermo-mechanical aspects. As a general rule, the accelerated ageing of power modules is carried out under aggravated conditions of current (Active Cycling) or temperature (Passive Cycling) in order to accelerate the ageing process. Unfortunately, when applying this type of accelerated ageing tests, some failure mechanisms that do not occur in the real application could be observed, while inversely, other mechanisms that usually occur could not be recreated. The first part of the PhD focuses on the implementation of an accelerated ageing method of the semiconductor devices inside photovoltaic inverters. This is accomplished by analyzing the mission profiles of the inverter’s output current and ambient temperature, extracted over several years from photovoltaic power plants located in the south of France. These profiles are used to study photovoltaic current dynamics, and are introduced into numerical models to estimate losses and junction temperature variations of semiconductors used in inverters, using the cycle counting algorithm “Rainflow”. This method is then performed in two experimental test benches. In the first one, the devices under test are IGBT modules, where the accelerated ageing profile designed is implemented using the opposition method. Moreover, an in-situ setup for monitoring ageing indicators (thermal impedance and dynamic resistance) is also proposed and evaluated. The second bench is devoted to study the ageing of SiC MOSFET power modules. The accelerated ageing test is carried out under the same conditions as for the IGBT modules with more monitored electrical indicators, but this time by disconnecting the semiconductor devices from the inverter. The results obtained allowed to determine several potential ageing indicators of IGBTs and SiC MOSFETs used in a photovoltaic inverter
Rashed, Amgad. "Mise en oeuvre de protocoles de vieillissement accélérés dédiés à l'étude de composants de puissance à semi-conducteur type "IGBT" en régime de cyclage actif." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20153/document.
Повний текст джерелаIGBT transistors are the most used power semiconductor devices in power electronics and are often integrated in power modules to constitute basic switching functions. In various applications, IGBT power modules suffer thermal cycling (or power cycling) due to variations of operating conditions. This power cycling induces thermo mechanical stress that can lead to damages and then, to failures. Ageing tests are a means to identify and analyze the degradation mechanisms due to power cycling by imposing calibrated test conditions. In addition, their results can be used to establish empiric lifetime models that are useful for power converter designers.The present work describes the implementation of an ageing test method dedicated to IGBT modules operating in the 600V-200A range. This method takes advantage of particular operating conditions generated by pulse width modulation inverters in which the IGBT modules to be tested are introduced. The modulation induces a variation of IGBT die temperature, i.e. a power cycling, of which the frequency is significantly higher (2Hz to 10Hz) than the operating frequencies of classical test systems. By using this technique, the test length is reduced while low values of thermal amplitude can be reached.Throughout the ageing tests, the monitoring of ageing indicators is required to evaluate the sample health and to stop the operation when predefined conditions are reached. In the present work, the ageing indicator is the on-state voltage VCE across the IGBT device that is relevant in regard with wire bond degradations. Therefore, as a complement of the fast test method, an automated VCE monitoring system has been developed in order to fully take benefit of the high test-speed. In addition, this system is able to measure the junction temperature and to provide the temperature profile during the power cycling.This test bench has made possible the ageing process of three dozen of samples by applying thermal swing amplitudes in the 30°C-50°C range, that is not reachable with classical test benches operating in low frequency because of the unacceptable test length. The results show that only one kind of damage is generated by the present test conditions, i.e. the degradation of attaches between the emitter metallization and the wire bonds. In many case, complete lift-off have been observed. Some samples have been used to evaluate the influence of thermal swing frequency on the results. The latter are unchanged when the frequency varies between 2Hz and 0.2Hz, therefore it is a first validation of the fast test relevance
Dornic, Nausicaa. "Élaboration et comparaison de deux modèles de durée de vie des fils d’interconnexion des modules de puissance, l’un basé sur les déformations et l’autre sur les dégradations." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLN043/document.
Повний текст джерелаThe domain of power electronics reliability has become an important center of interest with the recent massive system electrification. The manufacturers are more and more confronted to the necessity of producing reliable devices with optimized maintenance. Electronics components, such as IGBTs, diodes and MOSFETs assembled in power modules, are at the center of the systems conversion, and as a consequence, are subjected to high environmental and functional stresses (ambient temperature, vibrations…). All these factors have a strong impact on the components lifetime and thus on the devices reliability. Economically, scheduling a maintenance with a system replacement is less detrimental than a brutal failure of the system. As a consequence, the use of lifetime prognostic tools is necessary. The problematic consists in the health state prediction of power modules in functioning to be able to schedule a maintenance before the failure of the equipment.To be able to determine the remaining useful lifetime of power modules in functioning, lifetime models are used. These models can either be empirical, physical or statistical. The empirical models are the most common ones, because of their easy establishment and implementation. They are based on results from accelerated power cycling tests, which reproduce the stresses endured by the power modules in severe conditions. An extrapolation is then needed to obtain the power module health state in normal functioning conditions. The main drawback of these models is the lack of description of the physical mechanisms leading to damage, resulting potentially in errors in particular during extrapolation. That’s the reason why physical models start to draw more attention.In the thesis, two physical lifetime models of IGBT power modules are proposed. The first approach is based on deformation induced inside the device assembly in operation. The degradation is in this case described by the quantification of deformation related to thermal stresses. In the second approach, the lifetime model is based directly on damage through the establishment of a degradation model. These two lifetime models are finally compared to show the benefits and disadvantages of each. More generally, the establishment and comparison of these models is part of an approach to develop diagnostic tools so that the remaining useful lifetime of power modules can be predicted in operation
Lale, Adem. "Architectures d'intégration mixte monolithique-hybride de cellules de commutation de puissance sur puces multi-pôles silicium et assemblages optimisés." Thesis, Toulouse 3, 2017. http://www.theses.fr/2017TOU30174/document.
Повний текст джерелаCurrently, the standard 2D hybrid power module (power converter) is the reference technology for the medium and high power market. This hybrid power module is a discrete multi-chip case. The semi-conductor chips are interconnected by wire-bonding to form switching cells. The wire-bonding interconnection technology is a limiting factor in terms of electrical and thermomechanical performances, three-dimensional integrability and productivity. The aim of this thesis is to study new architectures of very integrated power converters. Compared to the so-called hybrid reference technology, the proposed architectures aim at a greater degree of integration, with an integration at both the semi-conductor level (monolithic integration) and the packaging level (hybrid integration). Monolithic integration consists in integrating switching cells into new multi-terminal macro-chip architectures. Hybrid integration consists in developing of new technologies to assemble these macro-chips. To validate the different proposed integration architectures, the first step was to study and validate the operating modes of the new chips by SentaurusTM TCAD simulations. Then, the multi-terminal chips were realized in the micro and nanotechnology platform of LAAS-CNRS laboratory. Finally, the chips were bonded on PCB substrates to realize power converter circuit prototypes. The highly integrated switching loop presents a stray inductance loop lower than one nanohenry, wich is an important improvement as compared to the values reported in literature (about 20 nH)
Reynes, Hugo. "Conception d'un module électronique de puissance pour application haute tension." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI035.
Повний текст джерелаThe supply of carbon-free energy is possible with renewable energy. However, windfarms and solar power plants are geographically away from the distribution points. Transporting the energy using the HVDC (High Voltage Direct Current) technology allow for a better yield along the distance and result in a cost effective approach compared to HVAC (High Voltage Alternative Current) lines. Thus, there is a need of high voltage power converters using power electronics. Recent development on wide bandgap semiconductors, especially silicon carbide (SiC) allow a higher blocking voltage (around 10 kV) that would simplify the design of such power electronic converters. On the other hand, the development on packaging technologies needs to follow this trend. In this thesis, an exploration of technological and normative limitation has been done for a high voltage power module design. The main hot spot are clearly identified and innovative solutions are studied to provide a proper response with a low impact on parasitic parameters. Partial Discharges (PD) on ceramic substrates is analyzed and a solution of a high Partial Discharge Inception Voltage (PDIV) is given based on geometrical parameters. The XHP-3 like power modules are studied and a solution allowing a use under 10 kV at a high pollution degree (PD3) is given
Dabla, Essi Ahoefa. "Approche bayesienne multiéchelle pour la modélisation de la fiabilité d'un module de puissance en environnement ferroviaire." Thesis, Toulouse, INPT, 2019. http://www.theses.fr/2019INPT0102.
Повний текст джерелаThe reliability control of critical electronic components is one of the challenges to be faced by railway stakeholders. IGBT (Insulated Gate Bipolar Transistors) power modules belong to this list of components. They are subject to high stresses corresponding to those encountered in harsh railway environments. The environmental conditions encountered in rail operations and the demanding availability requirements impose high levels of reliability on IGBT. In order to improve their reliability, an evaluation methodology has been developed based on a probabilistic approach and supported by a Bayesian network. For the implementation of the model, several working elements were assembled. First, an original approach called "U-Cycle" was proposed, highlighting in a one-to-one way a system level associated with the train and a component level similar to the IGBT considered simultaneously according to functional and dysfunctional views. In this context, the work led, first, to highlight the mechanisms characterizing, in a top-down logic, the influence of train loading on component stress and, in a bottom-up logic, the dysfunctional impact of the failure at component level on system reliability. In a second step, the results of this analysis led to the implementation of the structure of a Bayesian model whose generic nature allows it to be deployed for the reliable modelling of any type of rail system. The modelling work based on Bayesian networks is used to support the reconciliation between analytical models (failure physics) and data from the use of the elementary component in its operating environment. The model was used to model the reliability of an IGBT in an application framework corresponding to the metro in the city of Chennai, India. The data and expert knowledge collected on the project made it possible to determine the probability tables of the Bayesian network. The probabilistic results of the model have been translated into reliability indicators
Poller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-154320.
Повний текст джерелаFür die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann
Poller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20135.
Повний текст джерелаFür die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann.
Marzoughi, Alinaghi. "Investigating Impact of Emerging Medium-Voltage SiC MOSFETs on Medium-Voltage High-Power Applications." Diss., Virginia Tech, 2018. http://hdl.handle.net/10919/81822.
Повний текст джерелаPh. D.
Boutry, Arthur. "Theoretical and experimental evaluation of the Integrated gate-commutated thyristor (IGCT) as a switch for Modular Multi Level Converters (MMC)." Thesis, Lyon, 2021. http://www.theses.fr/2021LYSEI095.
Повний текст джерелаA study on Integrated gate-commutated thyristors (IGCT) di/dt limiting inductance and RCD-clamp reduction/suppression using plastic module silicon (Si) fast recovery diodes and silicon carbide (SiC) diodes, in Modular Multilevel Converters (MMC). This PhD contains:- Analysis of existing HVDC MMC Submodules.- Assessment of the interest of the IGCT in HVDC MMC Submodules and losses comparison with IGBTs, using MMC-specific figures-of-merit created in this thesis.- Double pulse test with fast recovery diode in plastic module to attempt to reduce and suppress the limiting di/dt inductor.- Packaging of High-Voltage High-Current SiC PiN diode dies, test with IGCT in the same setup to attempt to reduce and suppress the limiting di/dt inductor and analyze the specificities of the SiC diode in this setup
Krug, Dietmar. "Vergleichende Untersuchungen von Mehrpunkt-Schaltungstopologien mit zentralem Gleichspannungszwischenkreis für Mittelspannungsanwendungen." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-216245.
Повний текст джерелаThe thesis deals with a detailed comparison of voltage source converter topologies with a central dc-link energy storage device for medium voltage applications. The Three-Level Neutral Point Clamped Voltage Source Converter (3L-NPC VSC) is compared with multilevel Flying Capacitor (FLC) and Stacked Multicell (SMC) Voltage Source Converters (VSC) for output voltages of 2.3 kV, 4.16 kV and 6.6 kV by using state-of-the-art 6.5 kV, 3.3 kV, 4.5 kV and 1.7kV IGBTs. The fundamental functionality of the investigated converter topologies as well as the design of the power semiconductors and of the energy storage devices (Flying Capacitors and Dc-Link capacitors) is described. The installed switch power, converter losses, the semiconductor loss distribution, modulation strategies and the harmonic spectra are compared in detail
Chen, Yuan-You, and 陳沅佑. "Life Distribution and Reliability Assessment of IGBT Modules under Power Cycling." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/zep372.
Повний текст джерела國立臺灣大學
機械工程學研究所
106
Along with the development of electric vehicles, the reliability issue of insulated gate bipolar transistor (IGBT) modules has gained attention in recent years. In this research, the lifetime of an IGBT module is estimated first without considering dimensional uncertainties of the IGBT. It is done by employing finite element analysis to estimate the junction temperature of the IGBT module during its operation. The junction temperature, in turn, is used for predicting lifetime of the IGBT module. In the latter part of this research, an analytical procedure is proposed for evaluating and investigating effects of dimensional uncertainties on lifetime distribution and reliability of the IGBT. In the procedure, Monte Carlo method is used to simulate dimensional uncertainties. The same procedure employed in the first part of this research is carried out to obtain lifetime distribution of the IGBT module. The reliability of the IGBT module is revealed and discussed accordingly. The result shows that, among various dimensional uncertainties, the uncertainty of solder-layer thickness results in lifetime distribution similar to that of experimentally obtained data. After fitting simulated lifetime data by probability density functions, it is found that normal distribution, lognormal distribution and Weibull distribution can all describe appropriately the lifetime of the studied IGBT module. It is concluded that dimensional uncertainties affect significantly the lifetime and reliability of IGBT modules.
Gillot, Charlotte. "ETUDE ET REALISATION n'UNE FONCTION INTERRUPTEUR EN TECHNOLOGIE HYBRIDE A HAUTE INTEGRATION." Phd thesis, 2000. http://tel.archives-ouvertes.fr/tel-00689391.
Повний текст джерелаLi, Shengnan. "Packaging Design of IGBT Power Module Using Novel Switching Cells." 2011. http://trace.tennessee.edu/utk_graddiss/1205.
Повний текст джерелаLiou, Yan-Yu, and 劉彥禹. "Analysis and Investigation of Assembly Reliability for IGBT Power Module." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/84689698163644373646.
Повний текст джерела中原大學
機械工程研究所
104
Cause of power modules has higher and higher loading power day by day, the temperature of working chip has risen. The height temperature let the power modules have to worry about how to cooling down. Therefore, some people have do some experiment to get over the reason that cause power modules fail. The warpage of power modules could cause sintered silver which in module structure cracked when module assembly. Base on pre-bending method, this paper used it to cancel out the warpage which cause in the process of power modules. By using analysis of simulation, process of power modules and pre-bending method influence on the thermal stress. To see the effect by change the geometric parameters such as diode chip height, diode chip offset distance, thickness of copper in the DBC board, and thickness of sintering silver. The results showed that thicker sintered silver was better, but must being taken on whether solder broken.
Lin, Ting-Hung, and 林庭鴻. "Design and Implementation of High Power Three-phase Uninterruptible Power Systems and IGBT Module Drivers." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/84b6cx.
Повний текст джерелаRodríguez, Rodríguez José J. "Development of an electro-thermal model for a multi-chip IGBT power electronic module /." 2004. http://grad.uprm.edu/tesis/rodriguezrodriguez.pdf.
Повний текст джерелаMokhalodi, Kopano. "Development of a universal bidirectional galvanic isolated switch module for power converter applications." Thesis, 2013. http://hdl.handle.net/10352/235.
Повний текст джерелаThe global trends towards energy efficiency have facilitated the need for technological advancements in the design and control of power electronic converters for energy processing. The proposed design is intended to make the practical implementation of converters easier. The development of a universal bidirectional galvanic isolated switch module will be used to drive any MOSFET or IGBT in any position in any topology whether the load is AC or DC. Semiconductor switches are required and are also integrated for fast switching times in power converter applications The structure of the power switch module consists of an opto-coupler which will provide an isolation barrier for maximum galvanic isolation between the control circuitry and power stage. It also consists of a high performance gate drive circuit for high speed switching applications with a floating supply.
Telkom South Africa Ltd, TFMC Pty Ltd, M-TEC, THRIP
Yang, Chen-Wei, and 楊振偉. "Investigation on the Mechanical Behavior of IGBT Power Module Subjected to Thermal Loading Using Phase-stepping Shadow Moire and Finite Element Analysis." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/7yt62e.
Повний текст джерела國立虎尾科技大學
機械與機電工程研究所
102
In recent years, along with the improvement on manufacturing of semiconductor, the insulate gate bipolar transistors (IGBT) power transistors become to have high input impedance, low driving voltage, etc., and this makes they have been widely used in power modules especially for the application in electric vehicles and hybrid electric vehicles. This is why that IGBT power modules play a key role in green-related energy saving industry. However, there are some crucial reliability problems of IGBT power transistors arising in the manufacturing processes. Thermally-induced warpage coming from the thermal mismatch of coefficient of thermal expansion (CTE) between the each laminates of IGBT power transistors have been treated as one of the most important problems. This thesis aims to investigate the mechanical behavior of IGBT power module subjected to thermal loading. First, a cooper substrate was pre-bended and a phase-stepping shadow moire (PSSM) was established to measure its full-field warpge. Then finite element analysis (FEA) was utilized to simulate the deformation resulting from thermal loading. Three specimens including bare cooper substrate, direct bond copper (DBC) module mounted on cooper substrate, DBC module and IGBT power module mounted on cooper substrate were respectively carried out to experimentally and numerically investigate their thermal behavior.
Krug, Dietmar. "Vergleichende Untersuchungen von Mehrpunkt-Schaltungstopologien mit zentralem Gleichspannungszwischenkreis für Mittelspannungsanwendungen." Doctoral thesis, 2015. https://tud.qucosa.de/id/qucosa%3A30069.
Повний текст джерелаThe thesis deals with a detailed comparison of voltage source converter topologies with a central dc-link energy storage device for medium voltage applications. The Three-Level Neutral Point Clamped Voltage Source Converter (3L-NPC VSC) is compared with multilevel Flying Capacitor (FLC) and Stacked Multicell (SMC) Voltage Source Converters (VSC) for output voltages of 2.3 kV, 4.16 kV and 6.6 kV by using state-of-the-art 6.5 kV, 3.3 kV, 4.5 kV and 1.7kV IGBTs. The fundamental functionality of the investigated converter topologies as well as the design of the power semiconductors and of the energy storage devices (Flying Capacitors and Dc-Link capacitors) is described. The installed switch power, converter losses, the semiconductor loss distribution, modulation strategies and the harmonic spectra are compared in detail.:Inhaltsverzeichnis Liste der Variablen i Liste der Abkürzungen v 1 Einleitung 1 2 Überblick von Mittelspannungsstromrichtertopologien und Leistungshalbleitern 3 2.1 Mittelspannungsumrichtertopologien 3 2.2 Leistungshalbleiter 8 3 Aufbau und Funktion von Mittelspannungsstromrichtertopologien 10 3.1 Neutral Point Clamped Stromrichter (NPC) 10 3.1.1 3-Level Neutral Point Clamped Stromrichter (3L-NPC) 10 3.1.2 Mehrstufige NPC-Umrichter 21 3.2 Flying Capacitor Stromrichter (FLC) 23 3.2.1 3-Level Flying Capacitor Stromrichter (3L-FLC) 23 3.2.2 4-Level Flying Capacitor-Stromrichter (4L-FLC) 33 3.2.3 Mehrstufige Flying Capacitor-Stromrichter (NL-FLC) 39 3.3 Stacked Multicell Stromrichter (SMC) 43 3.3.1 5L-Stacked Multicell Stromrichter (5L-SMC) 43 3.3.2 N-Level Stacked Multicell Umrichter (NL-SMC) 51 4 Modellierung und Auslegung der Stromrichter 59 4.1 Verlustmodell 59 4.1.1 Sperrschichttemperaturen 64 4.2 Auslegung der Leistungshalbleiter 65 4.2.1 Stromauslegung 67 4.2.2 Worst-Case Arbeitspunkte 69 4.3 Auslegung der Zwischenkreiskondensatoren 75 4.3.1 Spannungszwischenkreis 76 4.3.2 Lastseitige Strombelastung und resultierende Spannungswelligkeit im Spannungszwischenkreis 77 4.3.3 Abhängigkeit der Strombelastung und der Spannungswelligkeit im Spannungszwischenkreis vom Frequenzverhältnis mf 95 4.3.4 Netzseitige Zwischenkreiseinspeisung 97 4.3.4.1 Zwischenkreiseinspeisung mit idealisiertem Transformatormodell 98 4.3.4.2 Zwischenkreiseinspeisung mit erweitertem Transformatormodell 101 4.3.5 Simulation des Gesamtsystems 104 4.4 Auslegung der Flying Capacitors 107 4.4.1 Strombelastung der Flying Capacitors 109 4.4.2 Spannungswelligkeit über den Flying Capacitors 113 4.4.3 Abhängigkeit der Spannungswelligkeit der Flying Capacitors vom Frequenzverhältnis mf 124 4.4.4 Auswirkung der Spannungswelligkeit der Flying Capacitors auf die Ausgangsspannungen 126 5 Vergleich der Stromrichtertopologien 129 5.1 Daten für den Stromrichtervergleich 129 5.2 Basis des Vergleiches 132 5.3 Vergleich für einen 2,3 kV Mittelspannungsstromrichter 134 5.3.1 Vergleich bei verschiedenen Schaltfrequenzen 134 5.3.2 Vergleich bei maximaler Trägerfrequenz 142 5.4 Vergleich für einen 4,16 kV Mittelspannungsstromrichter 146 5.4.1 Vergleich bei verschiedenen Schaltfrequenzen 146 5.4.2 Vergleich bei maximaler Trägerfrequenz 153 5.5 Vergleich für einen 6,6 kV Mittelspannungsstromrichter 156 5.5.1 Vergleich bei verschiedenen Schaltfrequenzen 156 5.5.2 Vergleich bei maximaler Trägerfrequenz 162 5.6 Vergleich von 2,3 kV, 4,16 kV und 6,6 kV Mittelspannungsstromrichtern 165 5.6.1 Vergleich bei identischer installierter Schalterleistung SS 165 5.6.2 Vergleich bei einer identischen Ausgangsleistung 167 6 Zusammenfassung und Bewertung 171 Anhang 175 A. Halbleiterverlustmodell 175 Referenzen 177