Добірка наукової літератури з теми "IGBT power modules"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "IGBT power modules".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "IGBT power modules"
Flores, David, Salvador Hidalgo, and Jesús Urresti. "New generation of 3.3kV IGBTs with monolitically integrated voltage and current sensors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 213–21. http://dx.doi.org/10.2298/fuee1502213f.
Повний текст джерелаFu, Xiao Jin, Chun Lan Que, Shuai Zhang, En Xing Yang, and Hang Ye. "The Design of Parallel IGBT Modular for Modularized Wind Power Converter." Applied Mechanics and Materials 734 (February 2015): 873–76. http://dx.doi.org/10.4028/www.scientific.net/amm.734.873.
Повний текст джерелаLi, Cui, Yao Sheng Li, Jun Xu Liu, Hua Qiang Shao, Zhong yuan Chen, and Jin Yuan Li. "Research on performance parameter degradation of high voltage and high power IGBT module in power cycling test." Journal of Physics: Conference Series 2290, no. 1 (June 1, 2022): 012041. http://dx.doi.org/10.1088/1742-6596/2290/1/012041.
Повний текст джерелаWang, Yan Gang, Dinesh Chamund, Shi Ping Li, Kevin Wu, Steve Jones, and Gary Liu. "Lifetime Prediction for Power IGBT Modules in Metro Traction Systems." Advanced Materials Research 846-847 (November 2013): 724–31. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.724.
Повний текст джерелаLevchuk, Svetlana, Monika Poebl, and Gerhard Mitic. "Diamond Composites for Power Electronics Application." Advanced Materials Research 59 (December 2008): 143–47. http://dx.doi.org/10.4028/www.scientific.net/amr.59.143.
Повний текст джерелаZheng, Qing Yuan, Min You Chen, Bing Gao, and Nan Jiang. "Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model." Advanced Materials Research 986-987 (July 2014): 823–27. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.823.
Повний текст джерелаWu, Yi Bo, Guo You Liu, Ning Hua Xu, and Ze Chun Dou. "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density." Applied Mechanics and Materials 303-306 (February 2013): 1902–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1902.
Повний текст джерелаShen, Bing, and Yifa Sheng. "Research on junction temperature monitoring technology of IGBT modules." Journal of Physics: Conference Series 2378, no. 1 (December 1, 2022): 012043. http://dx.doi.org/10.1088/1742-6596/2378/1/012043.
Повний текст джерелаSkibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.
Повний текст джерелаJo, Kim, Cho, and Lee. "Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules." Electronics 8, no. 10 (October 7, 2019): 1127. http://dx.doi.org/10.3390/electronics8101127.
Повний текст джерелаДисертації з теми "IGBT power modules"
Wang, Yalan. "Controlled switching of high power IGBT/diode modules." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613291.
Повний текст джерелаSignorello, Concetta. "Reduction of Switching Losses in IGBT Power Modules." Doctoral thesis, Università di Catania, 2015. http://hdl.handle.net/10761/4056.
Повний текст джерелаJoyce, John Charles. "Current sharing and redistribution in high power IGBT modules." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621350.
Повний текст джерелаCiappa, Mauro P. M. "Some reliability aspects of IGBT modules for high-power applications /." Zürich, 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13790.
Повний текст джерелаXiao, Di. "On Modern IGBT Modules: Characterization, Reliability and Failure Mechanisms." Thesis, Norwegian University of Science and Technology, Department of Electrical Power Engineering, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-10932.
Повний текст джерелаThe increased demand of offshore power conversion systems is driven by newly initiated offshore projects for wind farms and oil production. Because of long distances to shore and inaccessibility of the equipment long repair times must be expected. At the same time the offshore environment is extremely harsh. Thus, high reliability is required for the converters and it is important to have good knowledge of the switching devices. This thesis investigates switching characteristics and losses of commercially available IGBT modules to be used for this application. It focuses on switching time and switching energy losses depending on gate resistance, current and voltage levels, operation temperatures, and show differences between several devices of the same type. Some test show how device characteristics and losses when the device has been exposed to stress over a certain period.
Ji, Bing. "In-situ health monitoring of IGBT power modules in EV applications." Thesis, University of Newcastle Upon Tyne, 2012. http://hdl.handle.net/10443/1474.
Повний текст джерелаYaqub, Imran. "Investigation into stable failure to short circuit in IGBT power modules." Thesis, University of Nottingham, 2015. http://eprints.nottingham.ac.uk/30305/.
Повний текст джерелаSmet, Vanessa. "Aging and failure modes of IGBT power modules undergoing power cycling in high temperature environments." Thesis, Montpellier 2, 2010. http://www.theses.fr/2010MON20075/document.
Повний текст джерелаThis thesis is dedicated to reliability investigations led on three-phase 200~A~--~600~V IGBT power modules, designed for building drive inverters for hybrid or electric automotive traction applications. The objective was to evaluate the durability of the studied modules when they withstand power cycling in high temperature environments, and especially their resistance to thermo-mechanical fatigue. Two complementary approaches were considered: accelerated aging experiments and numerical modeling.A series of power cycling tests was carried out over a large range of temperature profiles, defined by the ambient temperature and IGBT junction temperature excursion. These quantities are used as thermal stress acceleration factors. Those experiments were led in realistic electrical conditions (PWM control scheme). They aimed at identifying the failure modes of the target devices, assessing the impact of the acceleration factors on their aging process, and evaluating the suitability of standard aging indicators as damage precursors in such harsh loading conditions. Besides, to better understand the failure mechanisms governing the fatigue life of the modules assembly, a thermo-mechanical modeling focusing on solder joints was built. Our simulation efforts concentrated on the appraisal of constitutive modeling effects on solder joints lifetime estimation. Numerical analysis of the assembly response to power cycling in similar operating conditions as practiced in experiments were performed. Behavior laws were then compared on stress, plastic strain, and strain energy density developed within the joints
Azar, Ramy. "A novel electro-thermal IGBT model for the design and analysis of large power IGBT modules in the spice environment." Thesis, University of Cambridge, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.619985.
Повний текст джерелаBelmehdi, Yassine. "Contribution à l'identification de nouveaux indicateurs de défaillance des modules de puissance à IGBT." Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14258/document.
Повний текст джерелаPower electronics has a role increasingly growing up in transport:electric and hybrid vehicles, trains and aircraft. For these applications, security is a critical point, thus the reliability of the power assembly must be optimized. The knowledge of time to failure is very important information for the designers of these systems. Inthis context, an early failure indicator would predict system failuresbefore it becomes effective. In this thesis, we focused on the electromechanical characterization of power transistors: MOSFET and IGBT. Based on these results this electromechanical characterization should help us in the longer term, to highlight an early failure indicator of the power assembly
Книги з теми "IGBT power modules"
Yun, Chan-Su. Static and dynamic thermal behavior of IGBT power modules. Konstanz: Hartung-Gorre, 2001.
Знайти повний текст джерелаCiappa, Mauro. Some reliability aspects of IGBT modules for high-power applications. Konstanz: Hartung-Gorre, 2001.
Знайти повний текст джерелаRectifier, International. Power interface products: HEXFET and IGBT muli-chip power SIP modules; designer's manual and product databook. El Segundo, CA: International Rectifier, 1992.
Знайти повний текст джерелаЧастини книг з теми "IGBT power modules"
Bharathsimha Reddy, A., S. N. Mahato, and Nilanjan Tewari. "Static and Dynamic Analysis of IGBT Power Modules for Low and High-Power Range Electric Drives." In Recent Advances in Power Electronics and Drives, 119–36. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-7728-2_9.
Повний текст джерелаZhou, Mingchao, Lei Wang, Mengxue Guo, Yanbei Sha, Qiuli Liu, and Lijun Diao. "Design and Research of Accelerated Aging Test Platform for IGBT Power Module." In Proceedings of the 5th International Conference on Electrical Engineering and Information Technologies for Rail Transportation (EITRT) 2021, 179–86. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-9913-9_21.
Повний текст джерелаFan, Zhigang, Dechun Zhu, Quan Jin, and Xiaozhou Shang. "Research on Flow Operation Scheduling for Flexible Production of IGBT Power Module Assemble." In Proceedings of the Eighth Asia International Symposium on Mechatronics, 1190–200. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-1309-9_115.
Повний текст джерелаSefsaf, H., B. Nadji, and Y. Yakhelef. "Characterization and Simulation of the Power IGBT Module Used in VFD for Drilling Applications." In Lecture Notes in Networks and Systems, 665–71. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21216-1_67.
Повний текст джерела"Power IGBT Modules." In Insulated Gate Bipolar Transistor IGBT Theory and Design, 465–98. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2005. http://dx.doi.org/10.1002/047172291x.ch9.
Повний текст джерела"Manufacturing of Power IGBT Modules." In Power Electronic Modules. CRC Press, 2004. http://dx.doi.org/10.1201/9780203507308.ch4.
Повний текст джерелаLu, Zhiyu, Maksim G. Popov, Elena V. Zakharova, Mikhail V. Gushin, and Dionizio Paschoareli Jr. "A Research Method of IGBT Non-Stationary Mode for Power and Electrical Equipment Control." In Advances in Transdisciplinary Engineering. IOS Press, 2022. http://dx.doi.org/10.3233/atde220486.
Повний текст джерела"Implementation of a Temperature Measurement Method for Condition Monitoring of IGBT Converter Modules in Online-Mode." In Power Electrical Systems, 179–200. De Gruyter Oldenbourg, 2018. http://dx.doi.org/10.1515/9783110470529-011.
Повний текст джерелаMakhloufi, Abderahman, Younes Aoues, Abdelkhalak El Hami, Bouchaib Radi, Philippe Pougnet, and David Delaux. "Study on the Thermomechanical Fatigue of Electronic Power Modules for Traction Applications in Electric and Hybrid Vehicles (IGBT)." In Reliability of High-Power Mechatronic Systems 1, 213–51. Elsevier, 2017. http://dx.doi.org/10.1016/b978-1-78548-260-1.50010-8.
Повний текст джерелаYang, Fei, Shengting Kuai, and Zhe Wang. "Study on Water Cooling Performance of IGBT Module in Wind Power Converter." In Advances in Transdisciplinary Engineering. IOS Press, 2021. http://dx.doi.org/10.3233/atde210262.
Повний текст джерелаТези доповідей конференцій з теми "IGBT power modules"
Jacob, P. "Reliability testing and analysis of IGBT power semiconductor modules." In IEE Colloquium on `IGBT Propulsion Drives'. IEE, 1995. http://dx.doi.org/10.1049/ic:19950531.
Повний текст джерелаNewcombe, D. R., Dinesh Cha, C. Bailey, and H. Lu. "Reliability metrics for IGBT power modules." In High Density Packaging (ICEPT-HDP). IEEE, 2010. http://dx.doi.org/10.1109/icept.2010.5582869.
Повний текст джерелаGutierrez, Erick, Kevin Lin, Douglas DeVoto, and Patrick McCluskey. "Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6470.
Повний текст джерелаJin, Qichen, Johannes K. Mendizabal, Nenad Miljkovic, and Arijit Banerjee. "In Situ Power Loss Estimation of IGBT Power Modules." In 2021 IEEE International Electric Machines & Drives Conference (IEMDC). IEEE, 2021. http://dx.doi.org/10.1109/iemdc47953.2021.9449570.
Повний текст джерелаMedaule, D. "Latest technology improvements of Mitsubishi IGBT modules." In IEE Colloquium on New Developments in Power Semiconductor Devices. IEE, 1996. http://dx.doi.org/10.1049/ic:19960862.
Повний текст джерелаIncau, Bogdan Ioan, Ionut Trintis, and Stig Munk-Nielsen. "Switching speed limitations of high power IGBT modules." In 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE, 2015. http://dx.doi.org/10.1109/epe.2015.7309369.
Повний текст джерелаCzubay, John, Sung Chung, and Prakash H. Desai. "IGBT Power Modules Evaluation for GM Electrified Vehicles." In WCX World Congress Experience. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2018. http://dx.doi.org/10.4271/2018-01-0460.
Повний текст джерелаIura, Shinichi, John F. Donlon, and Eckhard Thal. "Design approach of newly developed 3.3kV IGBT modules." In 2007 European Conference on Power Electronics and Applications. IEEE, 2007. http://dx.doi.org/10.1109/epe.2007.4417346.
Повний текст джерелаZhu, Nan, Dehong Xu, Xingyao Zhang, Min Chen, Seiki Igarashi, and Tatsuhiko Fujihira. "Switching noise suppression for hybrid IGBT modules." In 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE 2015-ECCE Asia). IEEE, 2015. http://dx.doi.org/10.1109/icpe.2015.7167878.
Повний текст джерелаQi, Tao, Jeff Graham, and Jian Sun. "Characterization of IGBT modules for system EMI simulation." In 2010 IEEE Applied Power Electronics Conference and Exposition - APEC 2010. IEEE, 2010. http://dx.doi.org/10.1109/apec.2010.5433545.
Повний текст джерелаЗвіти організацій з теми "IGBT power modules"
Ovrebo, Gregory K. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. Fort Belvoir, VA: Defense Technical Information Center, February 2015. http://dx.doi.org/10.21236/ada616757.
Повний текст джерела