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Статті в журналах з теми "I-III-VI2 semiconductors"
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Matsushita, Hiroaki, Saburo Endo, and Taizo Irie. "Thermodynamical Properties of I-III-VI2-Group Chalcopyrite Semiconductors." Japanese Journal of Applied Physics 30, Part 1, No. 6 (June 15, 1991): 1181–85. http://dx.doi.org/10.1143/jjap.30.1181.
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Xue, D., K. Betzler, and H. Hesse. "Dielectric properties of I-III-VI2-type chalcopyrite semiconductors." Physical Review B 62, no. 20 (November 15, 2000): 13546–51. http://dx.doi.org/10.1103/physrevb.62.13546.
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Başol, Bülent M. "I–III–VI2 compound semiconductors for solar cell applications." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, no. 4 (July 1992): 2006–12. http://dx.doi.org/10.1116/1.578017.
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Jakhmola, Priyanka R., Garima Agarwal, Prafulla K. Jha, and Satya Prakash Bhatnagar. "Nanorod Formation of Copper Indium (di) Selenide Nanorod Synthesize by Solvothermal Route." Advanced Materials Research 1047 (October 2014): 107–11. http://dx.doi.org/10.4028/www.scientific.net/amr.1047.107.
Повний текст джерелаАнотація:
The compound belongs to I-III-VI2 group are promising material as an effective light-absorbing materials. Now a day, ternary chalcopyrite semiconductors, especially copper based I-III-VI2 semiconductors have attracted many investigators. They have several desirable features as absorbers in the thin film solar cells. In present work, copper indium (di) selenide have been prepared via solvothermal route. Several methods have been reported to prepare CuInSe2 nanostructures by solution route. In present work, tetragonal chalcopyrite copper indium (di) selenide nanorods has been synthesized by solvothermal method using ethylene diamine as a solvent. Structural analysis had been done by X-ray diffraction (XRD). The surface morphology of the as-grown nanorod has been studied using scanning electron microscopy. The bandgap of as grown nanorods is obtained from UV-Vis spectrum which will applicable to the solar cell devices.
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Balakrishnan, K., B. Vengatesan, and P. Ramasamy. "Growth and characterization of some I–III–VI2 compound semiconductors." Journal of Materials Science 29, no. 7 (April 1994): 1879–83. http://dx.doi.org/10.1007/bf00351308.
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Omer, Mustafa S., Hameed M. Ahmad, and Suran M. Mamand. "Temperature Dependence of Lattice Thermal Conductivity for some I-III-VI2 Group Compound Semiconductors." Journal of Zankoy Sulaimani - Part A 7, no. 1 (August 20, 2003): 7–15. http://dx.doi.org/10.17656/jzs.10117.
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Ueng, H. Y., and H. L. Hwang. "Defect structure of non-stoichiometric Cu-I-III-VI2 chalcopyrite semiconductors." Materials Science and Engineering: B 12, no. 3 (February 1992): 261–67. http://dx.doi.org/10.1016/0921-5107(92)90297-m.
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Nomura, Shigetaka, Saburo Endo, and Taizo Irie. "Method of materials design for I-III-VI2 chalcopyrite-type mixed crystal semiconductors." Electronics and Communications in Japan (Part II: Electronics) 71, no. 4 (1988): 101–13. http://dx.doi.org/10.1002/ecjb.4420710412.
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Ohmer, Melvin C., and Ravindra Pandey. "Emergence of Chalcopyrites as Nonlinear Optical Materials." MRS Bulletin 23, no. 7 (July 1998): 16–22. http://dx.doi.org/10.1557/s0883769400029031.
Повний текст джерелаАнотація:
Chalcopyrite nonlinear optical (NLO) semiconductors are presently enjoying a major renaissance. This rebirth of interest is due primarily to the success of recent materials research-and-development (R&D) programs that have dramatically improved the availability of large crackfree high-quality crystals. This overview provides a general review of chalcopyrites, of their application in laser systems that exploit second-harmonic generation (SHG) or optical parametric oscillation (OPO), and of the materials-selection criteria for laser crystals to assist in focusing R&D efforts. It also suggests broader application areas. The overview concludes with a number of specific recommendations for further R&D efforts to advance this materials technology.The archetype infrared NLO chalcopyrites are AgGaSe2 (a I-III-VI2 semiconductor) and ZnGeP2 (a II-IV-V2 semiconductor). Using samples of naturally occurring pyrites, Pauling correctly established the chalcopyrite's crystal structure (diamondlike where Zn and Ge cations are ordered) in 1932 after two previous false starts by others. Levine, who has extensively studied the nonlinear susceptibilities of a number of bond types, stated in 1973 that the chalcopyrite structure is so favorable for NLO properties that it will be difficult to ever find materials with larger nonlinearities in the infrared spectral region. That statement has proved to be prophetic.Goodman of Great Britain first reported that chalcopyrites were semiconductors. However the first observation that these materials were semiconductors is generally attributed to A.F. Ioffe and N. A. Goryunova of the A.F. Ioffe Physico-Technical Institute (IPT) in St Petersburg, Russia.
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John, Rita. "Band Gap Engineering in Bulk and Nano Semiconductors." MRS Proceedings 1454 (2012): 233–38. http://dx.doi.org/10.1557/opl.2012.1445.
Повний текст джерелаАнотація:
ABSTRACTThe changes are brought in the elemental semiconductors Si and Ge by replacing them with II-VI and III-V binary analogs or their ternary analogs I-III-VI2 chalcopyrides and II-IV-V2 pnictides respectively. Such compounds exhibit transitions from their parent compound in terms of nature of band gaps (Eg) as indirect to direct in addition to the changes in the values of the Eg. These changes have direct consequence in their optical properties with degenerate states being lifted leading to crystal field splitting and so on. The Eg in ternary bulk semiconducting materials is engineered as a function of certain structural parameters such as anion position parameter (u), tetragonal compression parameter (η) through effective alloying. The contributions to Eg due to these effects are studied as band gap anomalies. The present paper discusses the results of the band gap engineering in some of the bulk ABC2(A= Cd; B=Si,Ge,Sn; C= P,As) semiconductors using theoretical methods. The influence of each of A, B and C atom is also discussed. The dependence of morphology of nano semiconducting particles and the band gap on the chemical environment, temperature is reported by us. The confinement energy of a compound which is the difference in energy between the bulk and nano forms is investigated.
Дисертації з теми "I-III-VI2 semiconductors"
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Bhattacharyya, Biswajit. "A Study of Photophysics and Photochemistry of I-III-VI2 Nanocrystals." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/4325.
Повний текст джерелаАнотація:
This thesis, entitled “A Study of Photophysics and Photochemistry of I-III-VI2 Nanocrystals” primarily deals with the properties of I-III-VI2 semiconductor nanocrystals composed of earth abundant, environmentally benign and relatively non-hazardous elements. In initial two chapters, the synthesis and photophysics of CuFeS2 and CuAlS2 QDs have been described. Both materials are potential candidates for various optoelectronic applications, and this makes the study of their physical properties interesting and relevant. Chapter 5 shows the light harvesting potential of I-III-VI2 QDs by using these to perform efficient artificial photosynthesis. Chapter two describes the stable synthesis and interesting optical properties of CuFeS2 and its core shell structures. These materials exhibit a tunable band gap that spans the range of 0.5 – 2 eV (600 nm – 2500 nm). Although the as-prepared material is non-emissive, CuFeS2/CdS core/shell structures are shown to exhibit quantum yields that exceed 80%. Like other members of the I-III-VI2 family QDs, CuFeS2 based nanoparticles exhibit a long- lived emission that is significantly red shifted compared to the band gap. Chapter three shows the various optical properties of CuAlS2 based QDs through calculation and ultrafast studies. CuAlS2/CdS QDs are shown to be associated with cross sections lower than 10-17 cm2 under the emission band. Investigation of this anomaly using spectroscopic techniques are described, and further, it is ascribed to the existence of a strong type-II offset between CuAlS2 and CdS layers. Besides their strong Stokes’ shift, CuAlS2/CdS QDs also exhibit high quantum yields (63%) as well as long emission lifetimes (~1500 ns). Finally the construction of a wide area transparent lighting device with a clear aperture of 7.5 cm2 is discussed. In Chapter four, the physical reason behind the stability of these I-III-VI2 QDs has been investigated. The optical properties of copper containing II-VI alloy quantum dots (CuxZn¬yCd1-x-ySe) were studied. Copper mole fractions within the host are varied from 0.001 to 0.35. No impurity phases are observed over this composition range. The optical absorption and emission spectra of these materials are observed to be a strong function of copper mole fractions, and provide information regarding composition induced impurity-impurity interactions. In particular, the integrated cross section of optical absorption per copper atom changes sharply with mole fraction of copper around 12%, suggesting a composition induced change in local electronic structure. In chapter five as photo reductive solar energy harvesters, it is shown that newly synthesized CuAlS2/ZnS QDs offer unprecedented advantages: these are composed of completely biocompatible, earth abundant, inexpensive elements; these exhibit very high solar to chemical energy conversion efficiencies and finally, light harvesting via these materials may be set up to reduce the carbon dioxide already present within the earth’s atmosphere. CuAlS2/ZnS structures can reduce aqueous bicarbonate ions to formate under visible light. The high turnover numbers (>7x104 molecules of sodium formate produced per QD), solar to chemical energy conversion efficiencies (20.2 +/- 0.2) are rationalized through our spectroscopic studies that show a short 550 fs electron dwell times in these structures. The high energy efficiency and the environmentally friendly composition of these materials suggest a future role in solar light harvesting.DST, IISc, ISRO
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Tsai, Hung Wei, and 蔡鴻偉. "Electrochemical Syntheses of V-VI, I-III-VI2, I2-II-IV-VI4 Chalcogenide Semiconductors." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/83311317775138925721.
Повний текст джерелаАнотація:
博士國立清華大學
材料科學工程學系
104
Electrochemistry studies the electrons transfer of the chemical moieties in the electrolytic solution, thus, inert materials which only supply or withdraw electrons such as pyrolytic graphite and platinum are commonly used as the electrodes in the electroanalyses. However, in most of the cases, the materials we utilized for the working electrode are not as nonreactive as pyrolytic graphite or platinum, and will take place the chemical reactions during supplying or withdrawing electrons. We focused on investigating the chemical reaction between the chemical moieties in electrolytic solution and the working electrode materials including V-VI semiconductor of Bi2Te3, I-III-VI2 semiconductor of Cu(In,Ga)Se2, and I2-II-IV-VI4 semiconductor of Cu2ZnSnS4 and hence developed four kinds of techniques, as mentioned as follows: (i) We demonstrate an one-step electrolysis process to directly form Bi2Te3 nanosheet arrays (NSAs) on the surface of Bi2Te3 bulk with controllable spacing distance and depth by tuning the applied bias and duration. The single sheet of NSAs reveals that the average thickness and electrical resistivity of single crystalline Bi2Te3 in composition are 399.8 nm and 137.34 μΩ⋅m, respectively. The formation mechanism and the selection rules of NSAs have been proposed. A 1.12 % energy conversion efficiency of quantum-dot-sensitized solar cells with Bi2Te3 NSAs as counter electrode has been demonstrated. (ii) We propose a gas-solid transformation mechanism to synthesize surfactant-free tellurium nanowires with average diameter under 20 nm at room temperature by one-step electrochemical method. The tellurium nanowires grow along the [001] direction due to the unique spiral chains in crystal structure and show an enhanced Raman scattering effect, a broad absorption band over the range of 350-750 nm and an emission band over the range of 400-700 nm in photoluminescence spectrum. Besides, the tellurium nanowires are directly applied as p-type dopant to dope graphene and result in a right shift of Dirac point in graphene field-effect transistor. Finally, we apply these tellurium nanowires as a supercapacitor electrode and demonstrate their promising capacitive properties. (iii) We introduce a surface modification on CIGSe thin film by electrochemical treatment. After this electrochemical passivation treatment, a lower oxygen concentration near the CIGSe surface was detected by XPS analysis. Temperature-dependent J-V characteristics of CIGSe solar cells reveal that the interface recombination can be suppressed and an improved rollover condition can be achieved. As a result, the defects near the CIGSe surface can be passivated by electrolysis and the performance of CIGSe solar cells can be enhanced from 4.7 % to 7.7 %. (iv) We demonstrate a one-step hybrid electrodeposition method which combines electrophoretic and electroplated electrodeposition to synthesize CZTS thin film. To our best condition, the composition of the as-deposited CZTS thin film can be achieved to be ~25.33 at%, ~19.44 at%, ~14.56 at%, and ~40.67 at% for Cu, Zn, Sn, and S elements, respectively. After the 550°C sulfurization for 1 hour in a sulfur vapor atmosphere, three diffraction peaks corresponding to the (112), (220), and (312) planes of CZTS could be detected in XRD spectra. The A Raman-active vibration modes at 287, 338 cm-1 and B Raman-active vibration modes at 374 cm-1 could be identified as kesterite CZTS in Raman spectra. An appropriate optical property of 1.48 eV band gap is achieved for photovoltaic application. Through careful analysis and optimization, we are able to demonstrate CZTS solar cells with the VOC, JSC, FF and η of 350 mV, 3.90 mA/cm2, 0.43 and 0.59 %, respectively.
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Anumol, S. "A Study of Synthesis and Optoelectronics of Copper Iron Chalcogenide Nanocrystals." Thesis, 2020. https://etd.iisc.ac.in/handle/2005/4984.
Повний текст джерелаАнотація:
Copper iron chalcogenides constitute a promising class of optoelectronic materials courtesy of their narrow bandgaps and earth abundant constitution. However, they are yet to receive the attention they deserve due to the lack of easy synthetic protocols and poorly understood material properties. Discordant narratives in the literature regarding their optoelectronic properties has also prevented them from being used for device-based applications. This thesis is aimed at rectifying a few of these issues. The objective of this thesis is to synthesize and study the properties of copper iron chalcogenide nanocrystals viz., CuFeS2 and CuFeSe2, and to explore their utility in the context of optoelectronic devices.
Chapter 1 provides a brief introduction to the fundamental concepts related to the work described in this thesis. The chapter further discusses the scope and motivation behind the work carried out in this thesis.
Chapter 2 describes our efforts to assign the nature of a feature in the optical absorption spectrum of CuFeS2 nanocrystals occurring at ~500 nm. Using a combination of steady-state and time-resolved optical spectroscopy as well as transport measurements we assign the feature to be a localized surface plasmon resonance and attribute the peculiar properties exhibited by CuFeS2 nanocrystals to this feature. Further, the transport measurements revealed that films of these nanocrystals can support a photoresponse.
Chapter 3 describes the fabrication and characterization of a broadband photodetector based on CuFeS2 nanocrystals. Briefly, we fabricated heterojunctions of CuFeS2 nanocrystals with bulk n type silicon and demonstrated a broadband photoresponse from 460 nm-2200 nm with response time of the order of microseconds. The photodetector was further found to possess a photothermal response that is bolometric in nature, which allows the device to sense hot objects at room temperature.
Chapter 4 describes our efforts to synthesize and study the optoelectronic properties of CuFeSe2 and CuFeSe2-CdS core-shell nanocrystals. We synthesized CuFeSe2 nanocrystals and studied their properties using structural, optical and electrical characterization techniques. The nanocrystals were found to have a very narrow bandgap of 0.11 eV and were also found to exhibit a plasmon resonance at ~410 nm. We further found that the films of these nanocrystals exhibited a photoresponse in the MIR, thus making them a promising candidate for infrared photodetection. We further synthesized highly luminescent CuFeSe2-CdS core-shell nanocrystals and found that the energetic position of their emission is greatly dependent on the sequence in which the shell growth precursors are added to the reaction mixture. Using optical and structural characterization techniques, we find that there are two different core-shell variants that result from the synthesis and their formation is determined by which one of the shell growth precursors is added to the reaction mixture first. The key difference between the two variants were found to be the presence of an interfacial CdSe layer which occurs whenever the cation precursor is added to the reaction mixture first.
Chapter 5 describes the synthesis of CuFexGa1-xS2 nanocrystals, a hitherto unknown composition of nanocrystals. Using alloying as a strategy, we synthesized CuFexGa1-xS2 nanocrystals corresponding to different Fe:Ga ratios. The properties of the resulting nanocrystals were found to be greatly dependent on their composition.
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Tomar, Nitin Kumar. "Studies on the synthesis and applications of I-III-VI2 semiconductor nanocrystals." Thesis, 2019. https://etd.iisc.ac.in/handle/2005/5122.
Повний текст джерелаАнотація:
Nanomaterials have been a topic of extensive research for the past several decades. This is because their properties act as a bridge between their bulk and atomic counterparts. Broadly, nanoparticles can be characterized as one dimensional, 2 dimensional or 3 dimensional depending on the number of directions in which particle size is limited. A semiconductor nanoparticle which is dimensionally limited in all the three directions is known as a Quantum Dot. In Quantum dots (QDs) the photoexcited charge carriers are constrained in a small volume and are not free to move in any direction. This causes an increased overlap between the electron and hole wavefunctions. As a result quantum dots possess many fascinating properties which render them useful in the field of optoelectronics, photovoltaics, and so on.
However the use of QDs as efficient photocatalysts is not known. Recently, CuAlS2/ZnS QDs were reported which could reduce aqueous Sodium bicarbonate ions to formate ions using visible radiation. The average energy conversion efficiency obtained was 17% with a maximum of 20% with a turnover number of 7.8 x 104 that is significantly greater than any values reported previously. However, the major reported reduction product is sodium formate. From an energy perspective, it would be much more beneficial to have combustible organics as the reduction product as these could be directly used as fuels. Even though the CuAlS2/ZnS QDs could eventually reduce bicarbonate into organics like butanol, it takes weeks for the reaction to complete. It would hence be highly desirable to have a catalyst that could do this over a much shorter duration. In the second chapter of my thesis I have synthesized CuGaS2/ZnS nanoparticles. These quantum dots are capable of photo-reducing aqueous sodium bicarbonate into a mixture of alcohols using visible light. This is enormously advantageous. The material is made completely of biocompatible elements which makes processing and use of this material entirely safe for environment. The materials used are earth abundant and this reduces the manufacturing cost of the catalysts. The photo-reduced products (mainly butanol) can be used as a fuel and reducing bicarbonate can help reduce the global warming by decreasing CO2 levels in the atmosphere.
Third chapter of my thesis elucidates the synthesis and optical properties of Copper Iron Aluminum Sulphide (CuFexAl1-xS2) QDs and its core shell structure with CdS. The band gap of CuAlS2 is 3.45 eV while the band gap of CuFeS2 system is 0.5 eV. The alloyed CuFexAl1-xS2 thus can have a tunable band gap from 3.45 to 0.5 eV. We demonstrate two compositions i.e CuFe0.1Al0.9S2 and CuFe0.35Al0.65S2 which exhibit band gaps of 1.6 eV and 0.7 eV respectively. These hybrid materials are not luminescent as such but coating a CdS layer on top of these materials makes them luminescent by eliminating surface traps. The CdS coated CuFexAl1-xS2 material QDs also exhibit tunable photoluminescence and tunable life time. The CuFexAl1-xS2/CdS system manifests the properties of both CuFeS2/CdS and CuAlS2/CdS i.e high Stokes shift and reasonably high Quantum yields. The potential of these materials for transparent display devices was verified.
Частини книг з теми "I-III-VI2 semiconductors"
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Madelung, Otfried. "I-III-VI2 compounds." In Semiconductors: Data Handbook, 289–328. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18865-7_7.
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Ueng, H. Y., and H. L. Wang. "Defect structure of the nonstoichiometric Cu-I-III-VI2 chalcopyrite semiconductors." In Non-Stoichiometry in Semiconductors, 69–79. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-444-89355-0.50013-2.
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Loferski, Joseph J. "Stoichiometric effects on the properties of Cu based chalcopyrite I-III-VI2 semiconductor thin films." In Non-Stoichiometry in Semiconductors, 257–68. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-444-89355-0.50037-5.
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Kluge, O., and H. Krautscheid. "Single-Source Precursors for I–III–VI2 Semiconductor Materials." In Reference Module in Chemistry, Molecular Sciences and Chemical Engineering. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-12-409547-2.11684-1.
Повний текст джерелаТези доповідей конференцій з теми "I-III-VI2 semiconductors"
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BODNAR, I. V., V. S. GURIN, A. P. MOLOCHKO, N. P. SOLOVEJ, K. V. YUMASHEV, and P. V. PROKOSHIN. "STRUCTURE AND OPTICAL PROPERTIES OF I-III-VI2 NANOPARTICLES SEMICONDUCTORS IN A GLASS SILICATE MATRIX." In Reviews and Short Notes to Nanomeeting '99. WORLD SCIENTIFIC, 1999. http://dx.doi.org/10.1142/9789812817990_0043.
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Kukimoto, Hiroshi. "Overview - Blue-Green Semiconductor LED/Laser Work in Japan." In Compact Blue-Green Lasers. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.thc2.
Повний текст джерелаАнотація:
The research in Japan on the wide-bandgap materials for short-wavelength light emitting devices based on modem growth techniques of MOVPE and MBE started in early 1980s. The first attempt to organize a cooperative research system for wide-gap semiconductors in Japan can be traced back to the year 1984, when about 20 university research groups which had already been engaged in research on wide-gap II-VI materials gathered and started to make plans for joint research. This was followed by a three-year period research project on the property control of compound semiconductors, especially of II-VI, wide-gap III-V and I-III-VI2 materials, within a priority area research program for "New Functionality Materials - Design, Preparation and Control", which started in 1987 under support of the Ministry of Education, Science and Culture. It was renewed in 1990 as an advanced project for additional three years, and since then it has been running with emphasis on atomic-scale control of crystal growth, control of localized electronic states, creation of new optical functionality, quantum structures and new properties, and control of material properties for new optical devices. Under the project, the growth of wide-gap II-VIs, especially of ZnSe and related alloys and superlattices has been very actively studied in many university laboratories.