Добірка наукової літератури з теми "I-III-VI2 semiconductors"
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Статті в журналах з теми "I-III-VI2 semiconductors"
Matsushita, Hiroaki, Saburo Endo, and Taizo Irie. "Thermodynamical Properties of I-III-VI2-Group Chalcopyrite Semiconductors." Japanese Journal of Applied Physics 30, Part 1, No. 6 (June 15, 1991): 1181–85. http://dx.doi.org/10.1143/jjap.30.1181.
Повний текст джерелаXue, D., K. Betzler, and H. Hesse. "Dielectric properties of I-III-VI2-type chalcopyrite semiconductors." Physical Review B 62, no. 20 (November 15, 2000): 13546–51. http://dx.doi.org/10.1103/physrevb.62.13546.
Повний текст джерелаBaşol, Bülent M. "I–III–VI2 compound semiconductors for solar cell applications." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, no. 4 (July 1992): 2006–12. http://dx.doi.org/10.1116/1.578017.
Повний текст джерелаJakhmola, Priyanka R., Garima Agarwal, Prafulla K. Jha, and Satya Prakash Bhatnagar. "Nanorod Formation of Copper Indium (di) Selenide Nanorod Synthesize by Solvothermal Route." Advanced Materials Research 1047 (October 2014): 107–11. http://dx.doi.org/10.4028/www.scientific.net/amr.1047.107.
Повний текст джерелаBalakrishnan, K., B. Vengatesan, and P. Ramasamy. "Growth and characterization of some I–III–VI2 compound semiconductors." Journal of Materials Science 29, no. 7 (April 1994): 1879–83. http://dx.doi.org/10.1007/bf00351308.
Повний текст джерелаOmer, Mustafa S., Hameed M. Ahmad, and Suran M. Mamand. "Temperature Dependence of Lattice Thermal Conductivity for some I-III-VI2 Group Compound Semiconductors." Journal of Zankoy Sulaimani - Part A 7, no. 1 (August 20, 2003): 7–15. http://dx.doi.org/10.17656/jzs.10117.
Повний текст джерелаUeng, H. Y., and H. L. Hwang. "Defect structure of non-stoichiometric Cu-I-III-VI2 chalcopyrite semiconductors." Materials Science and Engineering: B 12, no. 3 (February 1992): 261–67. http://dx.doi.org/10.1016/0921-5107(92)90297-m.
Повний текст джерелаNomura, Shigetaka, Saburo Endo, and Taizo Irie. "Method of materials design for I-III-VI2 chalcopyrite-type mixed crystal semiconductors." Electronics and Communications in Japan (Part II: Electronics) 71, no. 4 (1988): 101–13. http://dx.doi.org/10.1002/ecjb.4420710412.
Повний текст джерелаOhmer, Melvin C., and Ravindra Pandey. "Emergence of Chalcopyrites as Nonlinear Optical Materials." MRS Bulletin 23, no. 7 (July 1998): 16–22. http://dx.doi.org/10.1557/s0883769400029031.
Повний текст джерелаJohn, Rita. "Band Gap Engineering in Bulk and Nano Semiconductors." MRS Proceedings 1454 (2012): 233–38. http://dx.doi.org/10.1557/opl.2012.1445.
Повний текст джерелаДисертації з теми "I-III-VI2 semiconductors"
Bhattacharyya, Biswajit. "A Study of Photophysics and Photochemistry of I-III-VI2 Nanocrystals." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/4325.
Повний текст джерелаDST, IISc, ISRO
Tsai, Hung Wei, and 蔡鴻偉. "Electrochemical Syntheses of V-VI, I-III-VI2, I2-II-IV-VI4 Chalcogenide Semiconductors." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/83311317775138925721.
Повний текст джерела國立清華大學
材料科學工程學系
104
Electrochemistry studies the electrons transfer of the chemical moieties in the electrolytic solution, thus, inert materials which only supply or withdraw electrons such as pyrolytic graphite and platinum are commonly used as the electrodes in the electroanalyses. However, in most of the cases, the materials we utilized for the working electrode are not as nonreactive as pyrolytic graphite or platinum, and will take place the chemical reactions during supplying or withdrawing electrons. We focused on investigating the chemical reaction between the chemical moieties in electrolytic solution and the working electrode materials including V-VI semiconductor of Bi2Te3, I-III-VI2 semiconductor of Cu(In,Ga)Se2, and I2-II-IV-VI4 semiconductor of Cu2ZnSnS4 and hence developed four kinds of techniques, as mentioned as follows: (i) We demonstrate an one-step electrolysis process to directly form Bi2Te3 nanosheet arrays (NSAs) on the surface of Bi2Te3 bulk with controllable spacing distance and depth by tuning the applied bias and duration. The single sheet of NSAs reveals that the average thickness and electrical resistivity of single crystalline Bi2Te3 in composition are 399.8 nm and 137.34 μΩ⋅m, respectively. The formation mechanism and the selection rules of NSAs have been proposed. A 1.12 % energy conversion efficiency of quantum-dot-sensitized solar cells with Bi2Te3 NSAs as counter electrode has been demonstrated. (ii) We propose a gas-solid transformation mechanism to synthesize surfactant-free tellurium nanowires with average diameter under 20 nm at room temperature by one-step electrochemical method. The tellurium nanowires grow along the [001] direction due to the unique spiral chains in crystal structure and show an enhanced Raman scattering effect, a broad absorption band over the range of 350-750 nm and an emission band over the range of 400-700 nm in photoluminescence spectrum. Besides, the tellurium nanowires are directly applied as p-type dopant to dope graphene and result in a right shift of Dirac point in graphene field-effect transistor. Finally, we apply these tellurium nanowires as a supercapacitor electrode and demonstrate their promising capacitive properties. (iii) We introduce a surface modification on CIGSe thin film by electrochemical treatment. After this electrochemical passivation treatment, a lower oxygen concentration near the CIGSe surface was detected by XPS analysis. Temperature-dependent J-V characteristics of CIGSe solar cells reveal that the interface recombination can be suppressed and an improved rollover condition can be achieved. As a result, the defects near the CIGSe surface can be passivated by electrolysis and the performance of CIGSe solar cells can be enhanced from 4.7 % to 7.7 %. (iv) We demonstrate a one-step hybrid electrodeposition method which combines electrophoretic and electroplated electrodeposition to synthesize CZTS thin film. To our best condition, the composition of the as-deposited CZTS thin film can be achieved to be ~25.33 at%, ~19.44 at%, ~14.56 at%, and ~40.67 at% for Cu, Zn, Sn, and S elements, respectively. After the 550°C sulfurization for 1 hour in a sulfur vapor atmosphere, three diffraction peaks corresponding to the (112), (220), and (312) planes of CZTS could be detected in XRD spectra. The A Raman-active vibration modes at 287, 338 cm-1 and B Raman-active vibration modes at 374 cm-1 could be identified as kesterite CZTS in Raman spectra. An appropriate optical property of 1.48 eV band gap is achieved for photovoltaic application. Through careful analysis and optimization, we are able to demonstrate CZTS solar cells with the VOC, JSC, FF and η of 350 mV, 3.90 mA/cm2, 0.43 and 0.59 %, respectively.
Anumol, S. "A Study of Synthesis and Optoelectronics of Copper Iron Chalcogenide Nanocrystals." Thesis, 2020. https://etd.iisc.ac.in/handle/2005/4984.
Повний текст джерелаTomar, Nitin Kumar. "Studies on the synthesis and applications of I-III-VI2 semiconductor nanocrystals." Thesis, 2019. https://etd.iisc.ac.in/handle/2005/5122.
Повний текст джерелаЧастини книг з теми "I-III-VI2 semiconductors"
Madelung, Otfried. "I-III-VI2 compounds." In Semiconductors: Data Handbook, 289–328. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18865-7_7.
Повний текст джерелаUeng, H. Y., and H. L. Wang. "Defect structure of the nonstoichiometric Cu-I-III-VI2 chalcopyrite semiconductors." In Non-Stoichiometry in Semiconductors, 69–79. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-444-89355-0.50013-2.
Повний текст джерелаLoferski, Joseph J. "Stoichiometric effects on the properties of Cu based chalcopyrite I-III-VI2 semiconductor thin films." In Non-Stoichiometry in Semiconductors, 257–68. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-444-89355-0.50037-5.
Повний текст джерелаKluge, O., and H. Krautscheid. "Single-Source Precursors for I–III–VI2 Semiconductor Materials." In Reference Module in Chemistry, Molecular Sciences and Chemical Engineering. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-12-409547-2.11684-1.
Повний текст джерелаТези доповідей конференцій з теми "I-III-VI2 semiconductors"
BODNAR, I. V., V. S. GURIN, A. P. MOLOCHKO, N. P. SOLOVEJ, K. V. YUMASHEV, and P. V. PROKOSHIN. "STRUCTURE AND OPTICAL PROPERTIES OF I-III-VI2 NANOPARTICLES SEMICONDUCTORS IN A GLASS SILICATE MATRIX." In Reviews and Short Notes to Nanomeeting '99. WORLD SCIENTIFIC, 1999. http://dx.doi.org/10.1142/9789812817990_0043.
Повний текст джерелаKukimoto, Hiroshi. "Overview - Blue-Green Semiconductor LED/Laser Work in Japan." In Compact Blue-Green Lasers. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.thc2.
Повний текст джерела