Статті в журналах з теми "High voltage fragmentation technology"

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: High voltage fragmentation technology.

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "High voltage fragmentation technology".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Yan, Fazhi, Jiang Xu, Shoujian Peng, Quanle Zou, Bin Zhou, Kun Long, and Zhiguo Zhao. "Breakdown process and fragmentation characteristics of anthracite subjected to high-voltage electrical pulses treatment." Fuel 275 (September 2020): 117926. http://dx.doi.org/10.1016/j.fuel.2020.117926.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Lin, Baiquan, Xiangliang Zhang, Fazhi Yan, Chuanjie Zhu, and Chang Guo. "Improving the Conductivity and Porosity of Coal with NaCl Solution for High-Voltage Electrical Fragmentation." Energy & Fuels 32, no. 4 (March 28, 2018): 5010–19. http://dx.doi.org/10.1021/acs.energyfuels.8b00535.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Kovalchuk, B. M., A. V. Kharlov, V. A. Vizir, V. V. Kumpyak, V. B. Zorin, and V. N. Kiselev. "High-voltage pulsed generator for dynamic fragmentation of rocks." Review of Scientific Instruments 81, no. 10 (October 2010): 103506. http://dx.doi.org/10.1063/1.3497307.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Mativenga, Paul T., Norshah A. Shuaib, Jack Howarth, Fadri Pestalozzi, and Jörg Woidasky. "High voltage fragmentation and mechanical recycling of glass fibre thermoset composite." CIRP Annals 65, no. 1 (2016): 45–48. http://dx.doi.org/10.1016/j.cirp.2016.04.107.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Cho, Sang Ho, Sang Sun Cheong, Mitsuhiro Yokota, and Katsuhiko Kaneko. "The Dynamic Fracture Process in Rocks Under High-Voltage Pulse Fragmentation." Rock Mechanics and Rock Engineering 49, no. 10 (July 9, 2016): 3841–53. http://dx.doi.org/10.1007/s00603-016-1031-z.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Smit, Johan J., Thomas Andritsch, and Oleg A. Chevtchenko. "New materials in high voltage technology." e & i Elektrotechnik und Informationstechnik 129, no. 4 (June 2012): 180–85. http://dx.doi.org/10.1007/s00502-012-0025-0.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Santos, P. M., A. P. Casimiro, M. Lança, and M. I. Castro Simas. "High-voltage solutions in CMOS technology." Microelectronics Journal 33, no. 8 (August 2002): 609–17. http://dx.doi.org/10.1016/s0026-2692(02)00041-1.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Saunders, MP, PE Holmes, and BA Boxall. "A mixed technology high voltage process." Physica B+C 129, no. 1-3 (March 1985): 260–64. http://dx.doi.org/10.1016/0378-4363(85)90581-9.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Schneider, Thomas. "From Low to High Voltage Technology." MTZ worldwide 82, no. 4 (March 12, 2021): 14–15. http://dx.doi.org/10.1007/s38313-021-0646-y.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Leißner, T., D. Hamann, L. Wuschke, H. G. Jäckel, and U. A. Peuker. "High voltage fragmentation of composites from secondary raw materials – Potential and limitations." Waste Management 74 (April 2018): 123–34. http://dx.doi.org/10.1016/j.wasman.2017.12.031.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
11

Zhu, Xiaohua, Yunxu Luo, Weiji Liu, Ling He, Rui Gao, and Yudan Jia. "On the Mechanism of High-Voltage Pulsed Fragmentation from Electrical Breakdown Process." Rock Mechanics and Rock Engineering 54, no. 9 (June 19, 2021): 4593–616. http://dx.doi.org/10.1007/s00603-021-02537-5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
12

Krenyacz, Judit, László Drahos, and Károly Vékey. "Collision Energy and Cone Voltage Optimisation for Glycopeptide Analysis." European Journal of Mass Spectrometry 15, no. 2 (April 2009): 361–65. http://dx.doi.org/10.1255/ejms.942.

Повний текст джерела
Анотація:
Instrument tuning commonly used for peptide analysis and for proteomics causes a high degree of fragmentation for glycopeptides. This results in a strongly biased glycosylation pattern. To obtain correct results for glycopeptides, both the cone voltage and the collision energy has to be reduced significantly. A suitable standard for tuning the instrument for glycopeptide analysis is aspartic acid (which fragments under similar conditions as glycopeptides); while low mass sugar fragments (for example, at 657.3 Da) are good indicators for the presence/absence of glycopeptide fragmentation.
Стилі APA, Harvard, Vancouver, ISO та ін.
13

Zherlitsyn, A. A., V. M. Alexeenko, E. V. Kumpyak, and S. S. Kondratiev. "Fragmentation of printed circuit boards by sub-microsecond and microsecond high-voltage pulses." Minerals Engineering 176 (January 2022): 107340. http://dx.doi.org/10.1016/j.mineng.2021.107340.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
14

Cornick, K. J. "Insulators for High Voltage." Power Engineering Journal 2, no. 6 (1988): 304. http://dx.doi.org/10.1049/pe:19880064.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
15

Pope, M. "Balancing high-voltage batteries." Power Engineering Journal 5, no. 2 (1991): 87. http://dx.doi.org/10.1049/pe:19910020.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
16

Zhu, Fu Yun, Zhi Hui Lu, Hong Jun Ni, Shuai Shuai Lv, and Xing Xing Wang. "Developed of High Voltage Bushing with New Shielding Technology for High Voltage Switch Cabinet." Applied Mechanics and Materials 737 (March 2015): 247–51. http://dx.doi.org/10.4028/www.scientific.net/amm.737.247.

Повний текст джерела
Анотація:
TGZ10A-40.5 wall bushing of high voltage switch cabinet from one company was taken as applied research object. Reference the development process of high voltage cable shielding technology, three samples were designed and produced depending on different sets of the shield system. The result show that: surfaces processed by the way that the inner (aluminum cylinder) and the outer (metal mesh ring) shielding components were coated with a semi-conductive material, made little sense to improve the withstand voltage level and reduce the partial discharge; surface processed by the way that inner shield component (aluminum cylinder) was coated with semi-conductive material, the outer shield component (metal mesh ring) was not coated with semi-conductive material, was obviously influenced the improvement of the withstand voltage level and reduction of the partial discharge, compared with traditional technology, the average start voltage of corona increased 23.8%, the average value of partial discharge dropped 27.7%.
Стилі APA, Harvard, Vancouver, ISO та ін.
17

IKEDA, Hisatoshi. "Technology of Realizing the High Voltage Transmission." Journal of the Society of Mechanical Engineers 112, no. 1085 (2009): 299–301. http://dx.doi.org/10.1299/jsmemag.112.1085_299.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
18

Sun, Jiaqi. "Development Status of High Voltage Insulation Technology." Journal of Physics: Conference Series 1549 (June 2020): 052001. http://dx.doi.org/10.1088/1742-6596/1549/5/052001.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
19

Li, Yan. "Intelligent Control Technology of Ultra-High Voltage Grid." Journal of Advanced Computational Intelligence and Intelligent Informatics 23, no. 1 (January 20, 2019): 67–71. http://dx.doi.org/10.20965/jaciii.2019.p0067.

Повний текст джерела
Анотація:
In order to ensure the stability and economy of ultra-high voltage grid in construction, we need to research the intelligent control method of ultra-high voltage grid. Using current method in ultra-high voltage grid construction, there is a problem of poor stability. Therefore, this paper proposed an intelligent control method of ultra-high voltage grid. This method analyzed the transmission capacity of power grid and electromagnetic loop operation, and used the genetic algorithm to compute the optimization model, finally analyzed the stability of the power frequency voltage completing the intelligent control of ultra-high voltage grid. Experimental results show that this method has high practical value.
Стилі APA, Harvard, Vancouver, ISO та ін.
20

Yan, Fazhi, Baiquan Lin, Chuanjie Zhu, Yan Zhou, Xun Liu, Chang Guo, and Quanle Zou. "Experimental investigation on anthracite coal fragmentation by high-voltage electrical pulses in the air condition: Effect of breakdown voltage." Fuel 183 (November 2016): 583–92. http://dx.doi.org/10.1016/j.fuel.2016.06.124.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
21

Ruzza, Stefano, Enrico Dallago, Sergio Morini, and Giuseppe Venchi. "Integrated Low-Voltage Floating Power Supply in High-Voltage Technology for High $dV/dt$ Applications." IEEE Transactions on Power Electronics 26, no. 5 (May 2011): 1305–9. http://dx.doi.org/10.1109/tpel.2009.2016639.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
22

Che, Long, Xiaohui Gu, and Hongda Li. "Numerical analysis and experimental research on hard rock fragmentation by high voltage pulse discharge." Minerals Engineering 168 (July 2021): 106942. http://dx.doi.org/10.1016/j.mineng.2021.106942.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
23

Dean, K. A., H. Li, B. F. Coll, E. Howard, S. V. Johnson, M. R. Johnson, D. C. Jordan, et al. "63.2: High Brightness, High Voltage Color Field Emission Display Technology." SID Symposium Digest of Technical Papers 37, no. 1 (2006): 1845. http://dx.doi.org/10.1889/1.2433402.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
24

Ross, A. "High-voltage polymeric insulated cables." Power Engineering Journal 1, no. 1 (1987): 51. http://dx.doi.org/10.1049/pe:19870009.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
25

Davies, A. E. "High Voltage Direct Current Transmission." Power Engineering Journal 3, no. 2 (1989): 103. http://dx.doi.org/10.1049/pe:19890020.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
26

Metwally, Ibrahim A. "Technology progress in high-voltage gas-insulated substations." IEEE Potentials 29, no. 6 (November 2010): 25–32. http://dx.doi.org/10.1109/mpot.2010.939085.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
27

Barthelemy, H., and E. Kussener. "High speed voltage follower for standard BiCMOS technology." IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing 48, no. 7 (July 2001): 727–32. http://dx.doi.org/10.1109/82.958343.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
28

Abbott, R. S., J. P. Ellul, R. A. Hadaway, and J. J. White. "High-voltage n-channel metal-oxide-semiconductor technology." Canadian Journal of Physics 63, no. 6 (June 1, 1985): 897–900. http://dx.doi.org/10.1139/p85-147.

Повний текст джерела
Анотація:
High-voltage devices have been integrated into a standard silicon-gate NMOS IC fabrication process utilizing a novel front-end processing technique. Fabrication-process steps and modelling results are described in this paper. Driver transistors are characterized in terms of drift-region implant dose, design parameters, and substrate resistivities. Present work has optimized process parameters and device structures to yield "off" state breakdown up to 270 V for 6–10 Ω∙cm, p-type, [Formula: see text] substrates.
Стилі APA, Harvard, Vancouver, ISO та ін.
29

Sundaram, Sam. "Novel Process Techniques in High Voltage BIMOS Technology." ECS Proceedings Volumes 1989-15, no. 1 (January 1989): 162–68. http://dx.doi.org/10.1149/198915.0162pv.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
30

Lind, T. "400 V High Voltage IC – Technology and Devices." ECS Proceedings Volumes 1989-15, no. 1 (January 1989): 278–87. http://dx.doi.org/10.1149/198915.0278pv.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
31

Nakano, Masaji. "High Voltage IC Technology for Flat Display Panels." ECS Proceedings Volumes 1989-15, no. 1 (January 1989): 469–78. http://dx.doi.org/10.1149/198915.0469pv.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
32

Kissinger, G., W. Kissinger, K. Tittelbach-Helmrich, U. Retzlaff, J. Knopke, K. Schmalz, and G. Morgenstern. "Defect Engineering in a High-Voltage Substrate Technology." Solid State Phenomena 19-20 (January 1991): 175–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.19-20.175.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
33

Lin, Zi Xu, and Hong Hua Xu. "High Power Rate Wind Turbine Converter Technology." Advanced Materials Research 608-609 (December 2012): 529–36. http://dx.doi.org/10.4028/www.scientific.net/amr.608-609.529.

Повний текст джерела
Анотація:
Wind power converter device and its control system is the main research part of wind turbine. This paper, combining the technology developing trend of DFIG(double-fed induction generator) and FPWT (full power wind turbine), describes the implementation of converter devices and the strategies for LVRT, under unbalanced voltage, and gives the zero voltage ride through waveforms for DFIG
Стилі APA, Harvard, Vancouver, ISO та ін.
34

Pestalozzi, Fadri, Stefan Eisert, and Jörg Woidasky. "Benchmark Comparison of High Voltage Discharge Separation of Photovoltaic Modules by Electrohydraulic and Electrodynamic Fragmentation." Recycling 3, no. 2 (April 10, 2018): 13. http://dx.doi.org/10.3390/recycling3020013.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
35

Zhao, Yuemin, Bo Zhang, Chenlong Duan, Xia Chen, and Song Sun. "Material port fractal of fragmentation of waste printed circuit boards (WPCBs) by high-voltage pulse." Powder Technology 269 (January 2015): 219–26. http://dx.doi.org/10.1016/j.powtec.2014.09.006.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
36

Song, Bai-Peng, Meng-Yao Zhang, Yue Fan, Ling Jiang, Jun Kang, Ting-Tao Gou, Cheng-Lei Zhang, Ning Yang, Guan-Jun Zhang, and Xiang Zhou. "Recycling experimental investigation on end of life photovoltaic panels by application of high voltage fragmentation." Waste Management 101 (January 2020): 180–87. http://dx.doi.org/10.1016/j.wasman.2019.10.015.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
37

Song, Bai-Peng, Meng-Yao Zhang, Yue Fan, Ling Jiang, Jun Kang, Ting-Tao Gou, Cheng-Lei Zhang, Ning Yang, Guan-Jun Zhang, and Xiang Zhou. "End-of-life management of bifacial solar panels using high-voltage fragmentation as pretreatment approach." Journal of Cleaner Production 276 (December 2020): 124212. http://dx.doi.org/10.1016/j.jclepro.2020.124212.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
38

Jiang, Zhengrong, Huiyue Zhang, Zhiyu Zhang, and Jiahui Li. "Phase shift voltage regulating control technology in high voltage electrostatic precipitator power supply." International Journal of Power Electronics 12, no. 2 (2020): 254. http://dx.doi.org/10.1504/ijpelec.2020.10029997.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
39

Li, Jiahui, Zhiyu Zhang, Huiyue Zhang, and Zhengrong Jiang. "Phase shift voltage regulating control technology in high voltage electrostatic precipitator power supply." International Journal of Power Electronics 12, no. 2 (2020): 254. http://dx.doi.org/10.1504/ijpelec.2020.108846.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
40

Lambert, B., G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, H. Blanck, and C. Moreau. "Reliability of high voltage/high power L/S-band Hbt technology." Microelectronics Reliability 50, no. 9-11 (September 2010): 1543–47. http://dx.doi.org/10.1016/j.microrel.2010.07.105.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
41

red. "Protection for High-Voltage Systems." ATZautotechnology 7, no. 6 (November 2007): 26–27. http://dx.doi.org/10.1007/bf03247019.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
42

Liu, Sanwei, Chao Qiu, Yi Xie, Jianjia Duan, Fuyong Huang, Xiaoli Duan, and Zeyu Zeng. "Research on latent defect detection technology of high voltage cable." Journal of Physics: Conference Series 2113, no. 1 (November 1, 2021): 012051. http://dx.doi.org/10.1088/1742-6596/2113/1/012051.

Повний текст джерела
Анотація:
Abstract As a component of the Internet of things, high-voltage cables are the power supply infrastructure for the modern development of cities. The operation experience shows that the high-voltage cable has been broken down many times, due to the defective operation. At present, due to the limitation of detection technology, the research on detection and identification of defects in high-voltage cables is progressing slowly. Therefore, a new DR technology based on X-ray digital imaging is proposed in this paper to realize real-time detection of defects in the semi-conductive buffer layer of high-voltage cables, and intelligent detection of DR images of high-voltage cables by using image depth processing technology to realize intelligent identification of defects in the buffer layer of power cables. The results show that using the new DR technique proposed in this paper, the accurate and intuitive DR image of high-voltage cable can be obtained quickly, and the intelligent identification of defects can be realized.
Стилі APA, Harvard, Vancouver, ISO та ін.
43

Schurig, Enrico, Michel Demierre, Christian Schott, and Radivoje S. Popovic. "A vertical Hall device in CMOS high-voltage technology." Sensors and Actuators A: Physical 97-98 (April 2002): 47–53. http://dx.doi.org/10.1016/s0924-4247(01)00859-7.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
44

Jendernalik, Waldemar, Jacek Jakusz, Grzegorz Blakiewicz, and Miron Kłosowski. "A High-Efficient Low-Voltage Rectifier for CMOS Technology." Metrology and Measurement Systems 23, no. 2 (June 1, 2016): 261–68. http://dx.doi.org/10.1515/mms-2016-0017.

Повний текст джерела
Анотація:
AbstractA new configuration of rectifier suiting CMOS technology is presented. The rectifier consists of only two n-channel MOS transistors, two capacitors and two resistors; for this reason it is very favourable in manufacturing in CMOS technology. With these features the rectifier is easy to design and cheap in production. Despite its simplicity, the rectifier has relatively good characteristics, the voltage and power efficiency, and bandwidth greater than 89%, 87%, and 1 GHz, respectively. The performed simulations and measurements of a prototype circuit fully confirmed its correct operation and advantages.
Стилі APA, Harvard, Vancouver, ISO та ін.
45

Desko, J. C., M. N. Darwish, M. C. Dolly, C. A. Goodwin, W. R. Dawes, and J. L. Titus. "Radiations hardening of a high voltage IC technology (BCDMOS)." IEEE Transactions on Nuclear Science 37, no. 6 (1990): 2083–88. http://dx.doi.org/10.1109/23.101234.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
46

Bassin, C., H. Ballan та M. Declercq. "High-voltage devices for 0.5-μm standard CMOS technology". IEEE Electron Device Letters 21, № 1 (січень 2000): 40–42. http://dx.doi.org/10.1109/55.817446.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
47

Wang, Huai Qun, and Ming Zhu Zhang. "High-Voltage Converter Technology Applied in Coal Mining Ventilator." Applied Mechanics and Materials 380-384 (August 2013): 144–47. http://dx.doi.org/10.4028/www.scientific.net/amm.380-384.144.

Повний текст джерела
Анотація:
High-voltage converter technology applied in coal mining ventilator could gain a great deal of operating effectiveness and economic benefits. This paper illustrates the reformation of main ventilation system in some coal mine of Shanxi province. The defective operation conditions of previous mining ventilator and the advantage of converter control system applied in the mining ventilator are also proposed by this paper. The mathematical model of direct torque control (DTC) method used in the system is analyzed by giving dynamic model of stator flux oriented. The transformed design of converter control system with the benefits of highly enhanced energy-saving and environmental protections is involved as well as its operating statistics on energy-saving effect.
Стилі APA, Harvard, Vancouver, ISO та ін.
48

Riechert, Uwe, and Walter Holaus. "Ultra high-voltage gas-insulated switchgear - a technology milestone." European Transactions on Electrical Power 22, no. 1 (May 18, 2011): 60–82. http://dx.doi.org/10.1002/etep.582.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
49

Xu, Zi Li, Hao Wang, Min Lei, Jun Zhang, Cong Qi, and Wei Song. "Research on High Voltage Switch Mechanical Properties Calibration Technology." Advanced Materials Research 1008-1009 (August 2014): 1121–24. http://dx.doi.org/10.4028/www.scientific.net/amr.1008-1009.1121.

Повний текст джерела
Анотація:
High voltage switch mechanical parameters include time parameters, travel parameters and velocity parameters. In this paper, a standard device is developed which use liner motor to simulate switch motion that realize time parameters, travel parameters and velocity parameters calibration. This article describes the working principle of the standard device and core technology. The calibration data verify the device performance parameters meet the design requirements.
Стилі APA, Harvard, Vancouver, ISO та ін.
50

Zhou, M. J., A. De Bruycker, A. Van Calster, and J. Witters. "High voltage implanted RESURF p-LDMOS using BiCMOS technology." IEEE Transactions on Electron Devices 40, no. 11 (1993): 2132. http://dx.doi.org/10.1109/16.239814.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії