Дисертації з теми "High-temperature electronics packaging"
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Grummel, Brian. "HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES." Master's thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3200.
Повний текст джерелаM.S.E.E.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering MSEE
Smarra, Devin A. "Low Temperature Co-Fired Ceramic (LTCC) Substrate for High Temperature Microelectronics." University of Dayton / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1493386231571894.
Повний текст джерелаLei, Guangyin. "Thermomechanical Reliability of Low-Temperature Sintered Attachments on Direct Bonded Aluminum (DBA) Substrate for High-Temperature Electronics Packaging." Diss., Virginia Tech, 2010. http://hdl.handle.net/10919/37803.
Повний текст джерелаPh. D.
yin, jian. "High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure." Diss., Virginia Tech, 2005. http://hdl.handle.net/10919/30076.
Повний текст джерелаPh. D.
Msolli, Sabeur. "Modélisation thermomécanique de l'assemblage d'un composant diamant pour l'électronique de puissance haute température." Thesis, Toulouse, INPT, 2011. http://www.theses.fr/2011INPT0088/document.
Повний текст джерелаUse of diamond as constitutive component in power electronics devices is an interesting prospect for the high temperature and high power applications. The main challenge of this research work included in the Diamonix program is the study and the elaboration of a single-crystal diamond substrate with electronic quality and its associated packaging. The designed packaging has to resist to temperatures varying between -50°C and 300°C. We contributed to the choice of the connection materials intended to be used in the final test vehicle and which can handle such temperature gaps. In the first part, we present a state-of-the-art of the various materials solutions for extreme temperatures. Following this study, we propose a set of materials which considered as potential candidates for high temperature packaging. Special focus is given for the most critical elements in power electronic assemblies which are metallizations and solders. Once the materials choice carried out, thin substrate metallizations, solders and DBC coatings are studied using nanoindentation and nanoscratch tests. Mechanical tests were also carried out on solders to study their elastoviscoplastic and damage behavior. The experimental results are used as database for the identification of the parameters of the viscoplastic model coupled with a porous damage law, worked out for the case of solders. The behavior model is implemented as a user subroutine UMAT in a FE code to predict the degradation of a 2D power electronic assembly and various materials configuration for a 3D test vehicle
Syed-Khaja, Aarief [Verfasser], Jörg [Akademischer Betreuer] Franke, Jörg [Gutachter] Franke, Bertram [Gutachter] Schmidt, Jörg [Herausgeber] Franke, Nico [Herausgeber] Hanenkamp, Marion [Herausgeber] Merklein, Michael [Herausgeber] Schmidt, and Sandro [Herausgeber] Wartzack. "Diffusion Soldering for High-temperature Packaging of Power Electronics / Aarief Syed-Khaja ; Gutachter: Jörg Franke, Bertram Schmidt ; Betreuer: Jörg Franke ; Herausgeber: Jörg Franke, Nico Hanenkamp, Marion Merklein, Michael Schmidt, Sandro Wartzack." Erlangen : FAU University Press, 2018. http://d-nb.info/1179450450/34.
Повний текст джерелаBaazaoui, Ahlem. "Optimisation thermomécanique du packaging haute température d’un composant diamant pour l’électronique de puissance." Phd thesis, Toulouse, INPT, 2015. http://oatao.univ-toulouse.fr/14490/1/baazaoui.pdf.
Повний текст джерелаWang, Cai Johnson R. Wayne. "High temperature high power SiC devices packaging processes and materials development." Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Spring/doctoral/WANG_CAI_24.pdf.
Повний текст джерелаYue, Naili. "Planar Packaging and Electrical Characterization of High Temperature SiC Power Electronic Devices." Thesis, Virginia Tech, 2008. http://hdl.handle.net/10919/36278.
Повний текст джерелаMaster of Science
Riva, Raphaël. "Solution d'interconnexions pour la haute température." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0064/document.
Повний текст джерелаSilicon has reached its usage limit in many areas such as aeronautics. One of the challenges is the design of power components operable in high temperature and/or high voltage. The use of wide bandgap materials such as silicon carbide (SiC) provides in part a solution to meet these requirements. The packaging must be adapted to these new types of components and new operating environnement. However, it appears that the planar integration (2D), consisting of wire-bonding and soldered components-attach, can not meet these expectations. This thesis aims to develop a three dimensional power module for the high temperature aeronautics applications. A new original 3D structure made of two silicon carbide dies, silver-sintered die-attaches and an encapsulation by parylene HT has been developed. Its various constituting elements, the reason for their choice, and the pratical realization of the structure are presented in this manuscript. Then, we focus on a failure mode specific to silver-sintered attaches : The silver migration. An experimental study allows to define the triggering conditions of this failure. It is extended and analyzed by numerical simulations
Sabbah, Wissam. "Contribution à l’étude des assemblages et connexions nécessaires à la réalisation d’un module de puissance haute température à base de jfet en carbure de silicium (SiC)." Thesis, Bordeaux 1, 2013. http://www.theses.fr/2013BOR12013/document.
Повний текст джерелаThe development of power components based on silicon carbide (SiC) allows for the design of power converter operating at high temperature (above 200 or 300°C). SiC is a semiconductor material with a large band gap that not only can operate in temperatures exceeding 300°C but also offers fast switching speed, high voltage blocking capability and higher thermal conductivity compared to silicon technology components. The classical die attach technology uses high temperature solder alloys which melt at around 300°C. However, even a soldered die attach with such high melting point can only operate up to a much lower temperature. Alternative die attach solutions have recently been proposed: Transient Liquid Phase Bonding, soldering with higher melting point alloys such as ZnSn, or silver sintering.Silver sintering is a very interesting technology, as silver offers very good thermal conductivity (429W/m.K, better than copper), relatively inexpensive (compared to alternative solutions which often use gold), and has a very high melting point (961°C).The implementation of two silver-sintering processes is made: one based on micrometer-scale silver particles, and one on nano-meter-scale particles. Two substrate technologies are investigated: Al2O3 DBC and Si3N4 AMB. After the process optimization, tests vehicles are assembled using nano and micro silver particles paste and a more classical high-temperature die attach technology: AuGe soldering. Multiple analyses are performed, such as thermal resistance measurement, shear tests and micro-sections to follow the evolution of the joint during thermal cycling and high-temperature storage ageing
Gilham, David Joel. "Packaging of a High Power Density Point of Load Converter." Thesis, Virginia Tech, 2013. http://hdl.handle.net/10919/19325.
Повний текст джерелаOne issue with current converters is the large volume of the passive components. Increasing the switching frequency to the megahertz range is one way to reduce to volume of these components. The other way is to fundamentally change the way these inductors are designed. This work will explore the use of low temperature co-fired ceramic (LTCC) tapes in the magnetic design to allow a low profile planar inductor to be used as a substrate. LTCC tapes have excellent properties in the 1-10 MHz range that allow for a high permeability, low loss solution. These tapes are co-fired with a silver paste as the conductor. This paper looks at ways to reduce dc resistance in the inductor design through packaging methods which in turn allow for higher current operation and better heavy load efficiency. Fundamental limits for LTCC technologies are pushed past their limits during this work. This work also explores fabrication of LTCC inductors using two theoretical ideas: vertical flux and lateral flux. Issues are presented and methods are conceived for both types of designs. The lateral flux inductor gives much better inductance density which results in a much thinner design.
It is found that the active devices must be shielded from the magnetic substrate interference so active layer designs are discussed. Alumina and Aluminum Nitride substrates are used to form a complete 3D integration scheme that gives excellent thermal management even in natural convection. This work discusses the use of a stacked power technique which embeds the devices in the substrate to give double sided cooling capabilities. This fabrication goes away from traditional photoresist and solder-masking techniques and simplifies the entire process so that it can be transferred to industry. Time consuming sputtering and electroplating processes are removed and replaced by a direct bonded copper substrate which can have up to 8 mil thick copper layers allowing for even greater thermal capability in the substrate. The result is small footprint and volume with a power density 3X greater than any commercial product with comparable output currents. A two phase coupled inductor version using stacked power is also presented to achieve even higher power density.
As better device technologies come to the marketplace, higher power density designs can be achieved. This paper will introduce a 3D integration design that includes the use of Gallium Nitride devices. Gallium Nitride is rapidly becoming the popular device for high frequency designs due to its high electron mobility properties compared to silicon. This allows for lower switching losses and thus better thermal characteristics at high frequency. The knowledge learned from the stacked power processes gives insight into creating a small footprint, high current ceramic substrate design. A 3D integrated design is presented using GaN devices along with a lateral flux inductor. Shielded and Non-Shielded power loop designs are compared to show the effect on overall converter efficiency. Thermal designs and comparisons to PCB are made using thermal imaging. The result is a footprint reduction of 40% from previous designs and power densities reaching close to 900W/in3.
Master of Science
Yao, Yiying. "Thermal Stability of Al₂O₃/Silicone Composites as High-Temperature Encapsulants." Diss., Virginia Tech, 2014. http://hdl.handle.net/10919/50593.
Повний текст джерелаPh. D.
Pike, Randy T. "Reworkable high temperature adhesives for Multichip Module (MCM-D) and Chip-on-Board (COB) applications." Thesis, Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/19506.
Повний текст джерелаMasson, Amandine. "Mise en oeuvre de techniques d'attaches de puces alternatives aux brasures pour des applications haute température." Phd thesis, INSA de Lyon, 2012. http://tel.archives-ouvertes.fr/tel-00759411.
Повний текст джерелаZhang, Ludi. "Etude de fiabilité des modules d'électronique de puissance à base de composant SiC pour applications hautes températures." Phd thesis, Université Sciences et Technologies - Bordeaux I, 2012. http://tel.archives-ouvertes.fr/tel-00988235.
Повний текст джерелаShao, Pei-sheng, and 邵培盛. "A Novel Electronic Packaging Technique to Replace High-Temperature Sn-Pb Solders." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/77quec.
Повний текст джерела國立臺灣科技大學
材料科學與工程系
99
In this study, the multi-layer structure (In/Ni/Cu/Ni/In) and Sn/Cu substrate reflowing at 200, 240 and 300oC for 2 h, then aging at 100oC for 50-100 h. Hoping to use this structure to replace the high-temperature Sn-Pb solders and achieve both reliability and environmental protection requirements. The results showed the all systems were formed the (Cu,Ni)6(Sn,In)5 phase and Cu2In3Sn phase at interface. In the 200oC system, it formed a planar layer (Ni,Cu)3(Sn,In)4 near Ni layer; In the 300oC system, it formed a planar layer Cu3(Sn,In) near Cu substrate, and most of them were (Cu,Ni)6(Sn,In)5 and Cu3(Sn,In) two phases. All systems formed IMCs don’t change with increasing aging time. But in the systems which were reflowed at 200 and 240oC, Cu2In3Sn and (Cu,Ni)6(Sn,In)5 phases of the occupied area ratio were increased; In the system which was reflowed at 300oC, Cu3(Sn,In) phase was growth with increasing aging time, and the growth mechanism is controlled by diffusion. In the mechanical strength testing, the reflowed at 300oC system is the most excellent. From all the results, this study finds that under the reflowed at 300oC system, this multi-layer structure is most suitable choice to replace high-temperature Sn-Pb solder.
Faulkner, Jacob Christopher. "A Thermal Feasibility Study and Design of an Air-cooled Rectangular Wide Band Gap Inverter." 2011. http://trace.tennessee.edu/utk_gradthes/870.
Повний текст джерела