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Статті в журналах з теми "High-temperature electronics packaging"
Slater, Conor, Radisav Cojbasic, Thomas Maeder, Yusuf Leblebici, and Peter Ryser. "Packaging technologies for high temperature control electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000184–92. http://dx.doi.org/10.4071/hiten-tp15.
Повний текст джерелаFraley, John R., Edgar Cilio, and Bryon Western. "Advanced Applications of High Temperature Magnetics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000046–55. http://dx.doi.org/10.4071/hiten-ma17.
Повний текст джерелаKumar, Rakesh. "A High Temperature and UV Stable Vapor Phase Polymer for Electronics Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000207–14. http://dx.doi.org/10.4071/hiten-paper3-rkumar.
Повний текст джерелаKumar, Rakesh. "Parylene HT®: A High Temperature Vapor Phase Polymer for Electronics Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000108–13. http://dx.doi.org/10.4071/hitec-rkumar-tp13.
Повний текст джерелаNasiri, Ardalan, Simon S. Ang, Tom Cannon, Errol V. Porter, Kaoru Uema Porter, Caitlin Chapin, Ruiqi Chen, and Debbie G. Senesky. "High-Temperature Electronics Packaging for Simulated Venus Condition." Journal of Microelectronics and Electronic Packaging 17, no. 2 (April 1, 2020): 59–66. http://dx.doi.org/10.4071/imaps.1115241.
Повний текст джерелаDaves, Glenn G. "Trends in Automotive Packaging." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (January 1, 2014): 001818–50. http://dx.doi.org/10.4071/2014dpc-keynote_th1_daves.
Повний текст джерелаShaddock, David, Cathleen Hoel, Nancy Stoffel, Mark Poliks, and Mohammed Alhendi. "Additively Manufactured Extreme Temperature Electronics Packaging." International Symposium on Microelectronics 2021, no. 1 (October 1, 2021): 000189–94. http://dx.doi.org/10.4071/1085-8024-2021.1.000189.
Повний текст джерелаFang, Kun, Rui Zhang, Tami Isaacs-Smith, R. Wayne Johnson, Emad Andarawis, and Alexey Vert. "Thin Film Multichip Packaging for High Temperature Digital Electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000039–45. http://dx.doi.org/10.4071/hiten-paper1-rwjohnson.
Повний текст джерелаMcCluskey, F. P., L. Condra, T. Torri, and J. Fink. "Packaging Reliability for High Temperature Electronics: A Materials Focus." Microelectronics International 13, no. 3 (December 1996): 23–26. http://dx.doi.org/10.1108/13565369610800386.
Повний текст джерелаGuo, Xiaorui, Qian Xun, Zuxin Li, and Shuxin Du. "Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review." Micromachines 10, no. 6 (June 19, 2019): 406. http://dx.doi.org/10.3390/mi10060406.
Повний текст джерелаДисертації з теми "High-temperature electronics packaging"
Grummel, Brian. "HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES." Master's thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3200.
Повний текст джерелаM.S.E.E.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering MSEE
Smarra, Devin A. "Low Temperature Co-Fired Ceramic (LTCC) Substrate for High Temperature Microelectronics." University of Dayton / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1493386231571894.
Повний текст джерелаLei, Guangyin. "Thermomechanical Reliability of Low-Temperature Sintered Attachments on Direct Bonded Aluminum (DBA) Substrate for High-Temperature Electronics Packaging." Diss., Virginia Tech, 2010. http://hdl.handle.net/10919/37803.
Повний текст джерелаPh. D.
yin, jian. "High Temperature SiC Embedded Chip Module (ECM) with Double-sided Metallization Structure." Diss., Virginia Tech, 2005. http://hdl.handle.net/10919/30076.
Повний текст джерелаPh. D.
Msolli, Sabeur. "Modélisation thermomécanique de l'assemblage d'un composant diamant pour l'électronique de puissance haute température." Thesis, Toulouse, INPT, 2011. http://www.theses.fr/2011INPT0088/document.
Повний текст джерелаUse of diamond as constitutive component in power electronics devices is an interesting prospect for the high temperature and high power applications. The main challenge of this research work included in the Diamonix program is the study and the elaboration of a single-crystal diamond substrate with electronic quality and its associated packaging. The designed packaging has to resist to temperatures varying between -50°C and 300°C. We contributed to the choice of the connection materials intended to be used in the final test vehicle and which can handle such temperature gaps. In the first part, we present a state-of-the-art of the various materials solutions for extreme temperatures. Following this study, we propose a set of materials which considered as potential candidates for high temperature packaging. Special focus is given for the most critical elements in power electronic assemblies which are metallizations and solders. Once the materials choice carried out, thin substrate metallizations, solders and DBC coatings are studied using nanoindentation and nanoscratch tests. Mechanical tests were also carried out on solders to study their elastoviscoplastic and damage behavior. The experimental results are used as database for the identification of the parameters of the viscoplastic model coupled with a porous damage law, worked out for the case of solders. The behavior model is implemented as a user subroutine UMAT in a FE code to predict the degradation of a 2D power electronic assembly and various materials configuration for a 3D test vehicle
Syed-Khaja, Aarief [Verfasser], Jörg [Akademischer Betreuer] Franke, Jörg [Gutachter] Franke, Bertram [Gutachter] Schmidt, Jörg [Herausgeber] Franke, Nico [Herausgeber] Hanenkamp, Marion [Herausgeber] Merklein, Michael [Herausgeber] Schmidt, and Sandro [Herausgeber] Wartzack. "Diffusion Soldering for High-temperature Packaging of Power Electronics / Aarief Syed-Khaja ; Gutachter: Jörg Franke, Bertram Schmidt ; Betreuer: Jörg Franke ; Herausgeber: Jörg Franke, Nico Hanenkamp, Marion Merklein, Michael Schmidt, Sandro Wartzack." Erlangen : FAU University Press, 2018. http://d-nb.info/1179450450/34.
Повний текст джерелаBaazaoui, Ahlem. "Optimisation thermomécanique du packaging haute température d’un composant diamant pour l’électronique de puissance." Phd thesis, Toulouse, INPT, 2015. http://oatao.univ-toulouse.fr/14490/1/baazaoui.pdf.
Повний текст джерелаWang, Cai Johnson R. Wayne. "High temperature high power SiC devices packaging processes and materials development." Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Spring/doctoral/WANG_CAI_24.pdf.
Повний текст джерелаYue, Naili. "Planar Packaging and Electrical Characterization of High Temperature SiC Power Electronic Devices." Thesis, Virginia Tech, 2008. http://hdl.handle.net/10919/36278.
Повний текст джерелаMaster of Science
Riva, Raphaël. "Solution d'interconnexions pour la haute température." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0064/document.
Повний текст джерелаSilicon has reached its usage limit in many areas such as aeronautics. One of the challenges is the design of power components operable in high temperature and/or high voltage. The use of wide bandgap materials such as silicon carbide (SiC) provides in part a solution to meet these requirements. The packaging must be adapted to these new types of components and new operating environnement. However, it appears that the planar integration (2D), consisting of wire-bonding and soldered components-attach, can not meet these expectations. This thesis aims to develop a three dimensional power module for the high temperature aeronautics applications. A new original 3D structure made of two silicon carbide dies, silver-sintered die-attaches and an encapsulation by parylene HT has been developed. Its various constituting elements, the reason for their choice, and the pratical realization of the structure are presented in this manuscript. Then, we focus on a failure mode specific to silver-sintered attaches : The silver migration. An experimental study allows to define the triggering conditions of this failure. It is extended and analyzed by numerical simulations
Книги з теми "High-temperature electronics packaging"
Patrick, McCluskey F., Grzybowski Richard, and Podlesak Thomas, eds. High temperature electronics. Boca Raton: CRC Press, 1997.
Знайти повний текст джерелаMcCluskey, F. Patrick, Thomas Podlesak, and Richard Grzybowski. High Temperature Electronics. Taylor & Francis Group, 2018.
Знайти повний текст джерелаMcCluskey, F. Patrick, Thomas Podlesak, and Richard Grzybowski. High Temperature Electronics. Taylor & Francis Group, 2018.
Знайти повний текст джерелаMcCluskey, F. Patrick, Thomas Podlesak, and Richard Grzybowski. High Temperature Electronics. Taylor & Francis Group, 2019.
Знайти повний текст джерелаMcCluskey, F. Patrick, Thomas Podlesak, and Richard Grzybowski. High Temperature Electronics. Taylor & Francis Group, 2018.
Знайти повний текст джерелаMcCluskey, F. Patrick, Thomas Podlesak, and Richard Grzybowski. High Temperature Electronics. Taylor & Francis Group, 2018.
Знайти повний текст джерелаЧастини книг з теми "High-temperature electronics packaging"
"HighTemperature Electronics Packaging." In High-Temperature Electronics. IEEE, 2009. http://dx.doi.org/10.1109/9780470544884.ch97.
Повний текст джерела"High Temperature Aluminum Nitride Packaging." In High-Temperature Electronics. IEEE, 2009. http://dx.doi.org/10.1109/9780470544884.ch103.
Повний текст джерела"Hybrid Materials, Assembly, and Packaging." In High-Temperature Electronics. IEEE, 2009. http://dx.doi.org/10.1109/9780470544884.part8.
Повний текст джерела"Electronics Packaging and Test Fixturing for the 500C Environment." In High-Temperature Electronics. IEEE, 2009. http://dx.doi.org/10.1109/9780470544884.ch105.
Повний текст джерела"First-Level Packaging Considerations for the use of Electronic Hardware at High Temperatures." In High Temperature Electronics, edited by F. Patrick McCluskey, Richard Grzybowski, and Thomas Podlesak, 129–62. CRC Press, 2018. http://dx.doi.org/10.1201/9780203751978-5.
Повний текст джерела"Second and Third Level Packaging Considerations for the use of Electronic Hardware at Elevated Temperatures." In High Temperature Electronics, edited by F. Patrick McCluskey, Richard Grzybowski, and Thomas Podlesak, 163–204. CRC Press, 2018. http://dx.doi.org/10.1201/9780203751978-6.
Повний текст джерелаJohnson, R. Wayne. "Electronic Packaging Approaches for High-Temperature Environments." In Extreme Environment Electronics, 777–90. CRC Press, 2017. http://dx.doi.org/10.1201/b13001-67.
Повний текст джерелаKhanna, Vinod Kumar. "High-temperature passive components, interconnections and packaging." In Extreme-Temperature and Harsh-Environment Electronics Physics, technology and applications. IOP Publishing, 2017. http://dx.doi.org/10.1088/978-0-7503-1155-7ch11.
Повний текст джерелаТези доповідей конференцій з теми "High-temperature electronics packaging"
Shaddock, David, and Liang Yin. "High temperature electronics packaging: An overview of substrates for high temperature." In 2015 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2015. http://dx.doi.org/10.1109/iscas.2015.7168846.
Повний текст джерелаGlasheen, Wm Michael, Deidre E. Cusack, and Helmar R. Steglich. "Combustor Flame Sensor With High Temperature Electronics." In ASME 1995 International Gas Turbine and Aeroengine Congress and Exposition. American Society of Mechanical Engineers, 1995. http://dx.doi.org/10.1115/95-gt-323.
Повний текст джерелаDaoguo Yang, Dongjing Liu, W. D. van Driel, Huib Scholten, L. Goumans, and R. Faria. "Advanced reliability study on high temperature automotive electronics." In High Density Packaging (ICEPT-HDP). IEEE, 2010. http://dx.doi.org/10.1109/icept.2010.5582777.
Повний текст джерелаBower, Greg, Chris Rogan, and Michael Zugger. "Evaluating High Temperature/High Voltage Packaging for SiC Power Electronics." In Power Systems Conference. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2010. http://dx.doi.org/10.4271/2010-01-1793.
Повний текст джерелаAshayer, Roya, Samjid H. Mannan, Shahriar Sajjadi, Mike P. Clode, and Mark M. Miodownik. "Nanoparticle Enhanced Solders for High Temperature Environments." In 2007 9th Electronics Packaging Technology Conference. IEEE, 2007. http://dx.doi.org/10.1109/eptc.2007.4469800.
Повний текст джерелаPHUA, Eric Jian Rong, Ming LIU, Jacob Song Kit LIM, Bokun CHO, and Chee Lip GAN. "Phthalonitrile-Based Electronic Packages for High Temperature Applications." In 2018 IEEE 20th Electronics Packaging Technology Conference (EPTC). IEEE, 2018. http://dx.doi.org/10.1109/eptc.2018.8654340.
Повний текст джерелаPeng, Jiale, Wei Lan, Yujun Wang, Yiming Ma, and Xiaobing Luo. "Thermal Management of the High-power Electronics in High Temperature Downhole Environment." In 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC). IEEE, 2020. http://dx.doi.org/10.1109/eptc50525.2020.9315026.
Повний текст джерелаChidambaram, V., Ho Beng Yeung, Chan Yuen Sing, and D. R. M. Woo. "High-temperature endurable encapsulation material." In 2012 IEEE 14th Electronics Packaging Technology Conference - (EPTC 2012). IEEE, 2012. http://dx.doi.org/10.1109/eptc.2012.6507052.
Повний текст джерелаWai, Leong Ching, Seit Wen Wei, Hwang How Yuan, and Daniel Rhee MinWoo. "High temperature die attach material on ENEPIG surface for high temperature (250DegC/500hour) and temperature cycle (−65 to +150DegC) applications." In 2014 IEEE 16th Electronics Packaging Technology Conference (EPTC). IEEE, 2014. http://dx.doi.org/10.1109/eptc.2014.7028376.
Повний текст джерелаMcCluskey, Patrick, and Pedro O. Quintero. "High Temperature Lead-Free Attach Reliability." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33457.
Повний текст джерела