Дисертації з теми "High frequency power switch"
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Ambatipudi, Radhika. "High Frequency (MHz) Planar Transformers for Next Generation Switch Mode Power Supplies." Doctoral thesis, Mittuniversitetet, Avdelningen för elektronikkonstruktion, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-20270.
Повний текст джерелаWorapishet, Apisak. "High frequency low power switched-current techniques." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.392911.
Повний текст джерелаKim, Hyun-Woong. "CMOS RF transmitter front-end module for high-power mobile applications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/47592.
Повний текст джерелаAmbatipudi, Radhika. "Multilayered Coreless Printed Circuit Board (PCB) Step-down Transformers for High Frequency Switch Mode Power Supplies (SMPS)." Licentiate thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-13967.
Повний текст джерелаKotte, Hari Babu. "High Speed (MHz) Switch Mode Power Supplies (SMPS) using Coreless PCB Transformer Technology." Licentiate thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-13964.
Повний текст джерелаMotto, Kevin. "Application of High-Power Snubberless Semiconductor Switches in High-Frequency PWM Converters." Thesis, Virginia Tech, 2000. http://hdl.handle.net/10919/35778.
Повний текст джерелаMaster of Science
Wong, Fu Keung, and n/a. "High Frequency Transformer for Switching Mode Power Supplies." Griffith University. School of Microelectronic Engineering, 2004. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20050211.110915.
Повний текст джерелаWong, Fu Keung. "High Frequency Transformer for Switching Mode Power Supplies." Thesis, Griffith University, 2004. http://hdl.handle.net/10072/367650.
Повний текст джерелаThesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Microelectronic Engineering
Full Text
Nuttall, Daniel Robert. "Advanced high frequency switched-mode power supply techniques and applications." Thesis, University of Manchester, 2011. https://www.research.manchester.ac.uk/portal/en/theses/advanced-high-frequency-switchedmode-power-supply-techniques-and-applications(5792cb86-58e3-488b-b27e-559c18e55250).html.
Повний текст джерелаWilliams, Richard. "High frequency multi-element transformers for switched-mode power supplies." Thesis, University of Bristol, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283625.
Повний текст джерелаLaBella, Thomas Matthew. "A High-Efficiency Hybrid Resonant Microconverter for Photovoltaic Generation Systems." Diss., Virginia Tech, 2014. http://hdl.handle.net/10919/50526.
Повний текст джерелаPh. D.
Sun, Keyao. "Protection, Control, and Auxiliary Power of Medium-Voltage High-Frequency SiC Devices." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/103743.
Повний текст джерелаDoctor of Philosophy
The wide bandgap semiconductor enables next-generation power electronics systems with higher efficiency and higher power density which will reduce the space, weight, and cost for power supply and conversion systems, especially for renewable energy. However, by pushing the system voltage level higher to medium-voltage of tens of kilovolts, although the system has higher efficiency and simpler control, the reliability drops. This dissertation, therefore, focusing on solving the possible overcurrent, overvoltage, and gate failure issues of the power electronics system that is caused by the high voltage and high electromagnetic interference environment. By utilizing the inductance of the device, a dual-protection method is proposed to prevent the overcurrent problem. The overcurrent fault can be detected within tens of nanoseconds so that the device will not be destroyed because of the huge fault current. When multiple devices are connected in series to hold higher voltage, the voltage sharing between different devices becomes another issue. The proposed modeling and control method for series-connected devices can balance the shared voltage, and make the control system stable so that no overvoltage problem will happen due to the non-evenly distributed voltages. Besides the possible overcurrent and overvoltage problems, losing control of the devices due to the unreliable auxiliary power supply is another issue. This dissertation proposed a scalable auxiliary power network with high efficiency, high immunity to electromagnetic interference, and high reliability. In this network, a wireless power transfer converter is designed to provide enough insulation and isolation capability, while a switched capacitor converter is designed to transfer voltage from several kilovolts to tens of volts. With the proposed overcurrent protection method, voltage sharing control, and reliable auxiliary power network, systems utilizing medium-voltage wide-bandgap semiconductor will have higher reliability to be implemented for different applications.
Wang, Kunrong. "High-Frequency Quasi-Single-Stage (QSS) Isolated AC-DC and DC-AC Power Conversion." Diss., Virginia Tech, 1998. http://hdl.handle.net/10919/29394.
Повний текст джерелаPh. D.
Leigh, Matthew. "HIGH POWER PULSED FIBER LASER SOURCES AND THEIR USE IN TERAHERTZ GENERATION ." Diss., The University of Arizona, 2008. http://hdl.handle.net/10150/193797.
Повний текст джерелаAhn, Minsik. "Design and Analysis of High Power and Low Harmonic for Multi Band Wireless Application." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/19712.
Повний текст джерелаHietakangas, S. (Simo). "Design methods and considerations of supply modulated switched RF power amplifiers." Doctoral thesis, Oulun yliopisto, 2012. http://urn.fi/urn:isbn:9789514298363.
Повний текст джерелаTiivistelmä Tämä väitöstyö käsittelee radiotaajuuksilla toimivien käyttöjännitemoduloitujen kytkintehovahvistimien ominaisuuksia ja suunnittelumenetelmiä. Suunnittelumenetelmiin liittyvän katsauksen ja simulaatioihin perustuvan tutkimusten lisäksi kaksi vahvistinta toteutettiin väitöstutkimuksen aikana: diskreettikomponentein toteutettu E-luokan vahvistin (MESFET, 0.5 W ja 1 GHz) ja integroituna piirinä toteutettu käänteinen E-luokan vahvistin (pHEMT, 2.0 W ja 1.6 GHz), jonka lähdön resonaattoripiiri sisällytettiin integroituun piiriin. Kytkinvahvistimien suunnittelumenetelmiä verrattiin ja kehitettiin edelleen siten, että suunnitteluvaiheessa voidaan ottaa huomioon esim. transistoripiirin takaisinkytkennässä olevan kapasitanssin epälineaarisuus. Työssä tutkittiin myös käyttöjännitemodulaation vaikutusta kytkinvahvistimien toimintaan, ja tutkimuksen tuloksena annettiin muutamia ehdotuksia käyttöjänniteriippuvan amplitudi- (Vdd / AM) ja vaihemodulaation (Vdd / PM) vähentämiseksi. Lähdön biasointipiirin toteutukseen suositeltiin pienen kelan ja siirtolinjan yhdistelmää. Yhdistelmän avulla pyritään maksimoimaan modulaationopeus ja minimoimaan vaikutukset harmonisiin impedansseihin. Pääkohtina väitöksessä ovat E-luokan kytkinvahvistimesta saadut tutkimus- ja mittaushavainnot käyttöjännitteen funktiona muuttuvasta transistorin tuloimpedanssista sekä suurikokoisen transistorin tuloissa tapahtuvan, säröytymisen aiheuttaman tulosignaalien ajoitusvirheen analyysi. Näiden lisäksi vahvistimen stabiilisuuteen kiinnitettiin huomiota. Saatujen havaintojen perusteella voimme todeta, että push-pull -tyyppinen E-luokan vahvistin olisi mielenkiintoinen valinta jatkotutkimuksille
Guzel, Kutlay. "X-band High Power Solid State Rf Switch." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614654/index.pdf.
Повний текст джерелаand CST®
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Kumar, Rajesh. "High power Tesla driven miniature plasma opening switch." Thesis, Loughborough University, 2009. https://dspace.lboro.ac.uk/2134/5478.
Повний текст джерелаJiao, Yang. "High Power High Frequency 3-level NPC Power Conversion System." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/56653.
Повний текст джерелаPh. D.
Jung, Chang won, Ming-jer Lee, Sunan Liu, G. P. Li, and Flaviis Franco De. "RECONFIGURABLE PATCH ANTENNA FOR FREQUENCY DIVERSITY WITH HIGH FREQUENCY RATIO (1.6:1)." International Foundation for Telemetering, 2005. http://hdl.handle.net/10150/605028.
Повний текст джерелаReconfigurable patch antenna integrated with RF mircoelectromechanical system (MEMS) switches is presented in this paper. The proposed antenna radiates circularly polarized wave at selectable dual frequencies (4.7 GHz and 7.5GHz) of high frequency ratio (1.6:1). The switches are incorporated into the diagonally-fed square patch for controlling the operation frequency, and a rectangular stub attached to the edge of the patch acts as the perturbation to produce the circular polarization. Gain of proposed antenna is 5 - 6dBi, and axial ratio satisfies 3dB criterion at both operating frequencies. The switches are monolithically integrated on quartz substrate. The antenna can be used in applications requiring frequency diversity of remarkable high frequency ratio.
Duewer, Bruce Eliot. "A Low-Power, High Performance MEMS-based Switch Fabric." NCSU, 2001. http://www.lib.ncsu.edu/theses/available/etd-20011015-145122.
Повний текст джерелаDUEWER, BRUCE ELIOT. A Low-Power, High Performance MEMS-based Switch Fabric. (Under the direction of Paul D. Franzon.)An approach with the potential for building large low power high performance crossbar networks is presented. Thin film polysilicon MEMS devices are developed to provide crosspoints. These devices are vertically moving plates that serve as variable capacitors. Addressing of large arrays using 2n rather than n-squared lines despite no active circuitry on the MEMS chips is facilitated by bistable device operation. Derivations of equations for bistable device operation are presented. Low power operation is possible as the devices are electrostatically controlled and are stationary except during reconfiguration. Early devices are fabricated using the MUMPS process. The bistability and array addressability properties are demonstrated. The substrate effect on device operation is measured and modeled; methods for utilizing the substrate effect to tune device operation are presented. Later devices are fabricated using the SUMMiT process. Changes in the SUMMiT design rules to increase allowable vertical motion range are proposed and designs using them fabricated. S-parameter characteristics of devices in both `on' and `off' states are measured. Addition of metallization after chip fabrication and release is necessary to lower the resistance of interconnect. A self masking method for applying this metallization allowing for decreased resistance at line crossings is proposed. This method is tested using each of sputtering and evaporation as the deposition technique for a gold and adhesion layer stack. Effectiveness of the method with each technique is evaluated. Chips suitable for providing high voltage control for large MEMS arrays are fabricated in a 2um feature size CMOS process. Architectures suitable for building large crossbars employing variable capacitor arrays are discussed. Optimization of hybrid CMOS/MEMS Clos arrays on the basis of criteria other than minimization of crosspoints is discussed. Array sizings to provide 192*192 and 256*256 crossbars are presented, and software examples for sizing and controlling Clos networks are provided. Evaluation of the suitability of the MEMS devices developed for use as digital or broadband crosspoints is evaluated, and potential future directions are proposed.
Abbasian, Sadegh. "Radio frequency switch mode power amplifiers and synchronous rectifiers for wireless applications." Thesis, University of British Columbia, 2015. http://hdl.handle.net/2429/55218.
Повний текст джерелаApplied Science, Faculty of
Engineering, School of (Okanagan)
Graduate
Majid, Abdul. "Analysis and implementation of switch mode power supplies in MHz frequency region." Licentiate thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-16691.
Повний текст джерелаAli, Sheikh Nijam. "A new radio frequency switch-mode power amplifier concept for wireless applications." Thesis, University of British Columbia, 2012. http://hdl.handle.net/2429/43065.
Повний текст джерелаPusino, Vincenzo. "High power, high frequency mode-locked semiconductor lasers." Thesis, University of Glasgow, 2014. http://theses.gla.ac.uk/5174/.
Повний текст джерелаDavari, Pooya. "High frequency high power converters for industrial applications." Thesis, Queensland University of Technology, 2013. https://eprints.qut.edu.au/62896/1/Pooya_Davari_Thesis.pdf.
Повний текст джерелаLeedham, Robert John. "High frequency switching with power MOSFETs." Thesis, University of Cambridge, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627468.
Повний текст джерелаPetkov, Roumen Dimitrov. "High power switched mode magnetron power supply systems for industrial microwave heating applications." Thesis, Teesside University, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259645.
Повний текст джерелаWang, Hongfang. "Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters." Diss., Virginia Tech, 2007. http://hdl.handle.net/10919/27517.
Повний текст джерелаPh. D.
Rahaman, Hasibur. "Investigation of a high-power, high-pressure spark gap switch with high repetition rate." [S.l.] : [s.n.], 2007. http://deposit.ddb.de/cgi-bin/dokserv?idn=985501057.
Повний текст джерелаGunda, Rahul. "Performance analysis of high power photoconductive switch at elevated temperature." Diss., Columbia, Mo. : University of Missouri-Columbia, 2005. http://hdl.handle.net/10355/4310.
Повний текст джерелаThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file viewed on (July 13, 2006) Includes bibliographical references.
LEGGIERI, ALBERTO. "High power sources and innovations for high frequency electronics." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2014. http://hdl.handle.net/2108/202459.
Повний текст джерелаLi, Wei Ph D. Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science. "Very-high-frequency low-voltage power delivery." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/82352.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (p. 217-223).
Power conversion for the myriad low-voltage electronic circuits in use today, including portable electronic devices, digital electronics, sensors and communication circuits, is becoming increasingly challenging due to the desire for lower voltages, higher conversion ratios and higher bandwidth. Future computation systems also pose a major challenge in energy delivery that is difficult to meet with existing devices and design strategies. To reduce interconnect bottlenecks and enable more flexible energy utilization, it is desired to deliver power across interconnects at high voltage and low current with on- or over-die transformation to low voltage and high current, while providing localized voltage regulation in numerous zones. This thesis introduces elements for hybrid GaN-Si dc-de power converters operating at very high frequencies (VHF, 30-300 MHz) for low-voltage applications. Contributions include development of a new VHF frequency multiplier inverter suitable for step-down power conversion, and a Si CMOS switched-capacitor step-down rectifier. These are applied to develop a prototype GaN-Si hybrid dc-dc converter operating at 50 MHz. Additionally, this thesis exploits these elements to propose an ac power delivery architecture for low-voltage electronics in which power is delivered across the interconnect to the load at VHF ac, with local on-die transformation and rectification to dc. With the proposed technologies and emerging passives, it is predicted that the ac power delivery system can achieve over 90 % efficiency with greater than 1 W/mm² power density and 5:1 voltage conversion ratio. A prototype system has been designed and fabricated using a TSMC 0.25 [mu]m CMOS process to validate the concept. It operates at 50 MHz with output power of 4 W. The prototype converter has 8:1 voltage conversion ratio with input voltage of 20 V and output voltage of 2.5 V. To the author's best knowledge, this is the first ac power delivery architecture for low-voltage electronics ever built and tested.
by Wei Li.
Ph.D.
Martin, Kevin Ian. "High power, diode pumped, single frequency lasers." Thesis, University of Southampton, 1996. https://eprints.soton.ac.uk/396626/.
Повний текст джерелаTabisz, Wojciech Antoni. "High-frequency multi-resonant power conversion techniques." Diss., Virginia Tech, 1990. http://hdl.handle.net/10919/37404.
Повний текст джерелаBiglarbegian, Mehrdad. "High Frequency GaN Power Converters Digital Twin." Thesis, The University of North Carolina at Charlotte, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10979304.
Повний текст джерелаThere is a need for a foundation of a research study aimed at investigations on near real-time reliability awareness of Gallium Nitride devices in high-frequency power converters for which we need advanced hardware and algorithms. This dissertation is moving beyond traditional reliability analysis and looking to more applicable and accurate analytical tools by introducing deep learning techniques and advanced sensing solutions. The computational structures will be applied at the edge of the power converter through online sensing and data processing units as well as on a remote server. They will provide an iterative ability to predict the time until the device may fail or reach a pre-defined degradation threshold.
With the availability of the most granular information deduced from advanced devices, a new data-driven scheme is proposed for system monitoring and possible lifetime extension Gallium Nitride power converters. The approach relies on the real-time on-resistance data extraction from the power converter, and calibration of an adaptive model using multi-physics co-simulations under power cycling. More specifically, the focus is on deploying machine learning algorithms to exploit for the parameter estimation in power electronics engineering reliability. The proposed techniques in this work are quite new and have not yet been developed and analyzed for high-frequency power converters specifically with Gallium Nitride power semiconductor devices.
Shen, Wei. "Design of High-density Transformers for High-frequency High-power Converters." Diss., Virginia Tech, 2006. http://hdl.handle.net/10919/28280.
Повний текст джерелаPh. D.
Li, Jie. "High frequency power transformer modelling for frequency response analysis (FRA) diagnosis." Thesis, University of Manchester, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.538489.
Повний текст джерелаKelkar, Kapil S. "Silicon carbide as a photoconductive switch material for high power applications." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/4469.
Повний текст джерелаThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on August 3, 2007) Includes bibliographical references.
Xue, Jing. "Single-phase vs. Three-phase High Power High Frequency Transformers." Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/32919.
Повний текст джерелаMaster of Science
Wojda, Rafal P. "Winding Resistance and Winding Power Loss of High-Frequency Power Inductors." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1345746593.
Повний текст джерелаImdad, Kashif. "High frequency modeling of power transformers under transients." Doctoral thesis, Universitat Politècnica de Catalunya, 2017. http://hdl.handle.net/10803/457774.
Повний текст джерелаEsta tesis presenta los resultados relacionados con el modelado en alta frecuencia de transformadores de potencia. Primero, un transformador de distribución de 25 kVA es ensayado a perturbaciones tipo rayo y se propone un modelo de alta frecuencia. El método de la función de transferencia es utilizado para estimar sus parámetros. En segundo lugar, se introduce un modelo avanzado de alta frecuencia. El modelo resulta de la investigación y modificación de los modelos de resonancia dual introducido por Sabiha y el de resonancia única introducido por Piantini con condiciones sin carga. El modelo propuesto es capaz de representar tanto la resonancia única como dual. El modelo es validado a partir de los resultados de referencia de Sabiha y Piantini. Los resultados de simulación indican que el modelo representa las sobretensiones transferidas al secundario, las impedancias de transferencia y el trabajo en carga del transformados coinciden con los modelos anteriores tanto en el dominio temporal y de la frecuencia. Los objetivos obtenidos en esta tesis son: * Metodología para determinar los parámetros de un transformador de potencia. * Modelo de alta frecuencia para simular el comportamiento transitorio frente a perturbaciones. * Modificación del modelo de alta frecuencia para representar una y dos resonancias. La originalidad y metodología de la tesis son: * El modelo de alta frecuencia del transformador ha sido obtenido a partir de la metodología de la función de transferencia. En la literatura, esta metodología ha sido usada en muchas aplicaciones como en la determinación de deformaciones mecánicas o fallo de aislamiento en espiras de transformadores. En esta tesis, los parámetros del modelo propuesto son obtenidos mediante esta metodología. * Modificación del modelo de alta frecuencia con resonancia única o dual utilizando el método de la función de transferencia. La metodología propuesta puede ser utilizada para determinar el estado del transformador. Sabiha propuso un modelo de alta frecuencia representado dos resonancias en condiciones de carga y de vacío. Este modelo ha sido utilizado como referencia para la modificación y mejora. En la tesis, el transformador de distribución 25 kVA disponible en el Departamento de Ingeniería Eléctrica de la UPC en la ESEIAAT ha sido ensayado a impulsos tipo rayo. Un algoritmo ha sido desarrollado para estimar los parámetros del transformador mediante el método de la función de transferencia utilizando la transformada de Fourier. En este esquema, una red de dos puertos ha sido adoptada para el análisis del transformador. Los parámetros del transformador como la Z11, Z12., Z21 y Z22 son calculadas para representar las frecuencias consideradas. Mediante el método de la función de transferencia los parámetros del transformador son determinados. El modelo propuesto se basa en elementos simples RLC capaces de representar con precisión dos frecuencias de resonancia. En la segunda parte de la tesis, un nuevo modelo es introducido capaz de representar ambos modelos de resonancia única y dual en uno solo. Se analiza el caso de carga y vacío.
Naredo, V. José Luis A. "Communication frequency response of high voltage power lines." Thesis, University of British Columbia, 1987. http://hdl.handle.net/2429/26725.
Повний текст джерелаApplied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
Lawson, James. "High frequency electromagnetic links for wireless power transfer." Thesis, Imperial College London, 2017. http://hdl.handle.net/10044/1/54841.
Повний текст джерелаAugla, Kader Hmood. "Losses in high frequency power inductors and transformers." Thesis, University of Bath, 1985. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.354726.
Повний текст джерелаLim, Seungbum. "High frequency power conversion architecture for grid interface." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/106083.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 145-151).
With the present ac-voltage distribution system, ac-dc converters are key components for driving many dc voltage applications from the ac grid voltage. There are a lot of electronic devices that natively operate from the dc voltage including light emitting diodes (LEDs), personal and laptop computers, and smart phones; for all of them there is a drive to increase functionality and to reduce the volume at the same time. The desire for further miniaturization is, however, facing a dominant obstacle strained by the performance requirements on power electronic circuits. In this thesis, a design technique for high-performance ac-dc power converters will be presented. A new grid interface ac-dc conversion architecture and associated circuit implementations are proposed along with novel control methods. This approach simultaneously address design challenges associated with high performance (e.g., high efficiency, high power factor, miniaturization, and high reliability/lifetime) of ac-dc power conversion systems. The proposed architecture is suitable for realizing ac-dc converters that switch in the HF range (3-30 MHz) with relatively low-voltage components and with zero-voltage switching (ZVS) conditions, enabling significant converter size reduction while maintaining high efficiency. Moreover, the proposed approach can achieve reasonably high power factor about 0.9, while dynamically buffering twice-line frequency energy using small capacitors operating with large voltage swings over the ac line voltage cycle. The ac-dc converter design shows that excellent combinations of power density, efficiency, and power factor can be realized with this approach.
by Seungbum Lim.
Ph. D.
Scahill, Charlanne Mary. "Design of high power, single frequency semiconductor lasers." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.624851.
Повний текст джерелаFarrington, Richard W. "Novel concepts in high-frequency resonant power processing." Diss., This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-05222007-091356/.
Повний текст джерелаRonkainen, T. (Tarmo). "Interference analysis of high frequency power line communications." Master's thesis, University of Oulu, 2019. http://jultika.oulu.fi/Record/nbnfioulu-201906072488.
Повний текст джерелаCliffe, Robert J. "High power high frequency DC-DC converter topologies for use in off-line power supplies." Thesis, Loughborough University, 1996. https://dspace.lboro.ac.uk/2134/7305.
Повний текст джерела