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Статті в журналах з теми "High Frequency Applications"

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Автор: Grafiati

Опубліковано: 10 грудня 2022

Оновлено: 29 січня 2023

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1

Sun, Haiyan, and Ling Sun. "An Improved Quad Flat Package for High Frequency SiP Applications." International Journal of Future Generation Communication and Networking 6, no. 6 (December 31, 2013): 37–46. http://dx.doi.org/10.14257/ijfgcn.2013.6.6.05.

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2

Headrick, J. M., and J. F. Thomason. "Applications of high-frequency radar." Radio Science 33, no. 4 (July 1998): 1045–54. http://dx.doi.org/10.1029/98rs01013.

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3

Sriram, S., A. Ward, J. Henning, and S. T. Allen. "SiC MESFETs for High-Frequency Applications." MRS Bulletin 30, no. 4 (April 2005): 308–11. http://dx.doi.org/10.1557/mrs2005.79.

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Анотація:

AbstractSignificant progress has been made in the development of SiC metal semiconductor field-effect transistors (MESFETs) and monolithic microwave integrated-circuit (MMIC) power amplifiers for high-frequency power applications. Three-inch-diameter high-purity semi-insulating 4H-SiC substrates have been used in this development, enabling high-volume fabrication with improved performance by minimizing surface- and substrate-related trapping issues previously observed in MESFETs. These devices exhibit excellent reliability characteristics, with mean time to failure in excess of 500 h at a junction temperature of 410°C. A sampling of these devices has also been running for over 5000 h in an rf high-temperature operating-life test, with negligible changes in performance. High-power SiC MMIC amplifiers have also been demonstrated with excellent yield and repeatability. These MMIC amplifiers show power performance characteristics not previously available with conventional GaAs technology. These developments have led to the commercial availability of SiC rf power MESFETs and to the release of a foundry process for MMIC fabrication.

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4

Perarasi, T., R. Gayathri, and P. Hamsagayathri. "Filter Design for High Frequency Applications." IOP Conference Series: Materials Science and Engineering 764 (March 7, 2020): 012045. http://dx.doi.org/10.1088/1757-899x/764/1/012045.

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5

Gardes, C., Y. Roelens, S. Bollaert, J. S. Galloo, X. Wallart, A. Curutchet, C. Gaquiere, et al. "Ballistic nanodevices for high frequency applications." International Journal of Nanotechnology 5, no. 6/7/8 (2008): 796. http://dx.doi.org/10.1504/ijnt.2008.018698.

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6

Xun Gong, W. J. Chappell, and L. P. B. Katehi. "Multifunctional substrates for high-frequency applications." IEEE Microwave and Wireless Components Letters 13, no. 10 (October 2003): 428–30. http://dx.doi.org/10.1109/lmwc.2003.818525.

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7

Sihlbom, R., M. Dernevik, Z. Lai, J. P. Starski, and J. Liu. "Conductive adhesives for high-frequency applications." IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A 21, no. 3 (1998): 469–77. http://dx.doi.org/10.1109/95.725211.

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8

Hamed, Ahmed, Mohamed Saeed, and Renato Negra. "Graphene-Based Frequency-Conversion Mixers for High-Frequency Applications." IEEE Transactions on Microwave Theory and Techniques 68, no. 6 (June 2020): 2090–96. http://dx.doi.org/10.1109/tmtt.2020.2978821.

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9

Klein, N. "High-frequency applications of high-temperature superconductor thin films." Reports on Progress in Physics 65, no. 10 (August 23, 2002): 1387–425. http://dx.doi.org/10.1088/0034-4885/65/10/201.

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10

Zampardi, P. J., K. Runge, R. L. Pierson, J. A. Higgins, R. Yu, B. T. McDermott, and N. Pan. "Heterostructure-based high-speed/high-frequency electronic circuit applications." Solid-State Electronics 43, no. 8 (August 1999): 1633–43. http://dx.doi.org/10.1016/s0038-1101(99)00113-6.

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11

Kheraluwala, M. H., D. W. Novotny, and D. M. Divan. "Coaxially wound transformers for high-power high-frequency applications." IEEE Transactions on Power Electronics 7, no. 1 (January 1992): 54–62. http://dx.doi.org/10.1109/63.124577.

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12

Sebastian, M. T., J. Krupka, S. Arun, C. H. Kim, and H. T. Kim. "Polypropylene-high resistivity silicon composite for high frequency applications." Materials Letters 232 (December 2018): 92–94. http://dx.doi.org/10.1016/j.matlet.2018.08.093.

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13

Salem, Samir Ben, Mourad Fakhfakh, Dorra Sellami Masmoudi, Mourad Loulou, Patrick Loumeau, and Nouri Masmoudi. "A high performances CMOS CCII and high frequency applications." Analog Integrated Circuits and Signal Processing 49, no. 1 (June 27, 2006): 71–78. http://dx.doi.org/10.1007/s10470-006-8694-4.

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14

Smith, R. W., Rex Walters, John Carlson, and Robert Harris. "High‐frequency acoustic systems for robotic applications." Journal of the Acoustical Society of America 79, S1 (May 1986): S60. http://dx.doi.org/10.1121/1.2023310.

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15

Ludwig, A., M. Lohndorf, M. Tewes, and E. Quandt. "Magnetoelastic thin films for high-frequency applications." IEEE Transactions on Magnetics 37, no. 4 (July 2001): 2690–92. http://dx.doi.org/10.1109/20.951276.

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16

Parvais, Bertrand, Uthayasankaran Peralagu, Abhitosh Vais, AliReza Alian, Liesbet Witters, Yves Mols, Amey Walke, et al. "(Invited) Advanced Transistors for High Frequency Applications." ECS Meeting Abstracts MA2020-01, no. 24 (May 1, 2020): 1392. http://dx.doi.org/10.1149/ma2020-01241392mtgabs.

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17

Lo Verde, John, Samantha Rawlings, and Wayland Dong. "Applications for new high-frequency impact ratings." Journal of the Acoustical Society of America 148, no. 4 (October 2020): 2751. http://dx.doi.org/10.1121/1.5147648.

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18

Goverdhanam, K., R. N. Simons, and L. P. B. Katehi. "Coplanar stripline components for high-frequency applications." IEEE Transactions on Microwave Theory and Techniques 45, no. 10 (1997): 1725–29. http://dx.doi.org/10.1109/22.641719.

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19

Parvais, Bertrand, Uthayasankaran Peralagu, Abhitosh Vais, AliReza Alian, Liesbet Witters, Yves Mols, Amey Walke, et al. "(Invited) Advanced Transistors for High Frequency Applications." ECS Transactions 97, no. 5 (May 1, 2020): 27–38. http://dx.doi.org/10.1149/09705.0027ecst.

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20

Bollaert, S., A. Cappy, Y. Roelens, J. S. Galloo, C. Gardes, Z. Teukam, X. Wallart, et al. "Ballistic nano-devices for high frequency applications." Thin Solid Films 515, no. 10 (March 2007): 4321–26. http://dx.doi.org/10.1016/j.tsf.2006.07.178.

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21

Iqbal, Y., H. A. Davies, M. R. J. Gibbs, T. R. Woodcock, I. Todd, and R. V. Major. "Nanocrystalline powder cores for high frequency applications." Journal of Magnetism and Magnetic Materials 242-245 (April 2002): 282–84. http://dx.doi.org/10.1016/s0304-8853(01)01256-2.

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22

Liang, Yuan, Jianqiong Zhang, Qingxiang Liu, and Xiangqiang Li. "High-Power Radial-Line Helical Subarray for High-Frequency Applications." IEEE Transactions on Antennas and Propagation 66, no. 8 (August 2018): 4034–41. http://dx.doi.org/10.1109/tap.2018.2840840.

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23

Roberts, David C., Hanqing Li, J. Lodewyk Steyn, Kevin T. Turner, Richard Mlcak, Laxminarayana Saggere, S. Mark Spearing, Martin A. Schmidt, and Nesbitt W. Hagood. "A high-frequency, high-stiffness piezoelectric actuator for microhydraulic applications." Sensors and Actuators A: Physical 97-98 (April 2002): 620–31. http://dx.doi.org/10.1016/s0924-4247(01)00841-x.

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24

Varga, L. K. "Soft magnetic nanocomposites for high-frequency and high-temperature applications." Journal of Magnetism and Magnetic Materials 316, no. 2 (September 2007): 442–47. http://dx.doi.org/10.1016/j.jmmm.2007.03.180.

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25

Wang, Yijie, Oscar Lucia, and Zhe Zhang. "High and Very High Frequency Power Supplies for Industrial Applications." IEEE Transactions on Industrial Electronics 67, no. 2 (February 2020): 1400–1404. http://dx.doi.org/10.1109/tie.2019.2929900.

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26

Leary, Alex M., Paul R. Ohodnicki, and Michael E. McHenry. "Soft Magnetic Materials in High-Frequency, High-Power Conversion Applications." JOM 64, no. 7 (July 2012): 772–81. http://dx.doi.org/10.1007/s11837-012-0350-0.

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27

Brunner, Sebastian, Manfred Stadler, Xin Wang, Frank Bauer, and Klaus Aichholzer. "ADVANCED HIGH FREQUENCY LTCC MATERIALS FOR APPLICATIONS BEYOND 60 GHZ." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, CICMT (September 1, 2012): 000077–81. http://dx.doi.org/10.4071/cicmt-2012-tp11.

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Анотація:

In this paper we will present an application of advanced Low Temperature Cofired Ceramic (LTCC) technology beyond 60 GHz. Therefore a RF frontend for 76–81 GHz radar frequency was built. LTCC is a well established technology for applications for consumer handheld units <5 GHz but will provide solutions for applications for high frequencies in the range of 60 GHz and beyond. Radar sensors operating in the 76-81 GHz range are considered key for Advanced Driver Assistance Systems (ADAS) like Adaptive Cruise Control (ACC), Collision Mitigation and Avoidance Systems (CMS) or Lane Change Assist (LCA). These applications are the next wave in automotive safety systems and have thus generated increased interest in lower-cost solutions especially for the mm-wave frontend section.

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28

Çavdar, Uğur, Mehmet Taştan, Hayrettin Gökozan, and Sezai Taşkin. "Comparative energy consumption analyses of an ultra high frequency induction heating system for material processing applications." Revista de Metalurgia 51, no. 3 (September 11, 2015): e046. http://dx.doi.org/10.3989/revmetalm.046.

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29

C.S, Sajin, and Dr T. A. Shahul Hameed. "Review of CMOS Amplifiers for High Frequency Applications." International Journal of Engineering and Advanced Technology 10, no. 2 (December 30, 2020): 175–80. http://dx.doi.org/10.35940/ijeat.b2101.1210220.

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Анотація:

The headway in electronics technology proffers user-friendly devices. The characteristics such as high integration, low power consumption, good noise immunity are the significant benefits that CMOS offer, paying many challenges simultaneously with it. The short channel effects and presence of parasitic which prevent speed pose questions on the performance parameters. A great sort of works has done by many groups in the design of the CMOS amplifier for high-frequency applications to discuss the parameters such as power consumption, high bandwidth, high speed and linearity trade-off to obtain an optimized output. A lot of amplifier topologies are experimented and discussed in the literature with its design and simulation. In this paper, the various efforts associated with CMOS amplifier circuit for high-frequency applications are studying extensively.

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30

Nakajima, Norio. "High Frequency Ceramic Multilayer Device and the Applications." Journal of SHM 13, no. 4 (1997): 35–39. http://dx.doi.org/10.5104/jiep1993.13.4_35.

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31

Dinulovic, Dragan, Alexander Gerfer, Oliver Opitz, Matthias Kaiser, Marc C. Wurz, and Lutz Rissing. "Thin-Film Microtransformer for High Frequency Power Applications." EPJ Web of Conferences 75 (2014): 06006. http://dx.doi.org/10.1051/epjconf/20147506006.

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32

WEI, Cheng Hsie, and Steve MARSHALL. "Three Layers Diamond Heads for High Frequency Applications." Journal of the Magnetics Society of Japan 18, S_1_PMRC_94_1 (1994): S1_207–207. http://dx.doi.org/10.3379/jmsjmag.18.s1_207.

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33

Dimos, D., and C. H. Mueller. "PEROVSKITE THIN FILMS FOR HIGH-FREQUENCY CAPACITOR APPLICATIONS." Annual Review of Materials Science 28, no. 1 (August 1998): 397–419. http://dx.doi.org/10.1146/annurev.matsci.28.1.397.

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34

Chan, Helen Lai-Wa, Kun Li, and Chung-Loong Choy. "PSmT Ceramic Fibers for High Frequency Transducer Applications." Ferroelectrics 324, no. 1 (September 2005): 11–19. http://dx.doi.org/10.1080/00150190500323479.

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35

Hussain, Muhammad Waqar, Hossein Elahipanah, Stephan Schroder, Saul Rodriguez, Bengt Gunnar Malm, Mikael Ostling, and Ana Rusu. "An Intermediate Frequency Amplifier for High-Temperature Applications." IEEE Transactions on Electron Devices 65, no. 4 (April 2018): 1411–18. http://dx.doi.org/10.1109/ted.2018.2804392.

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36

Buynevich, Ilya V. "Buried Tracks: Ichnological Applications of High-Frequency Georadar." Ichnos 18, no. 4 (October 2011): 189–91. http://dx.doi.org/10.1080/10420940.2011.632300.

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37

Kozakova, Zuzana, Ivo Kuritka, Vladimir Babayan, Natalia Kazantseva, and Miroslav Pastorek. "Magnetic Iron Oxide Nanoparticles for High Frequency Applications." IEEE Transactions on Magnetics 49, no. 3 (March 2013): 995–99. http://dx.doi.org/10.1109/tmag.2012.2228471.

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38

Peake, N. "On applications of high-frequency asymptotics in aeroacoustics." Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences 362, no. 1816 (January 28, 2004): 673–96. http://dx.doi.org/10.1098/rsta.2003.1340.

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39

Kaul, Anupama B., Eric W. Wong, Larry Epp, and Brian D. Hunt. "Electromechanical Carbon Nanotube Switches for High-Frequency Applications." Nano Letters 6, no. 5 (May 2006): 942–47. http://dx.doi.org/10.1021/nl052552r.

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40

Jensen, K. L. "Field emitter array development for high frequency applications." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 2 (March 1998): 749. http://dx.doi.org/10.1116/1.590217.

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41

ARSLAN, EMRE, and AVNİ MORGÜL. "SELF-BIASING CURRENT CONVEYOR FOR HIGH FREQUENCY APPLICATIONS." Journal of Circuits, Systems and Computers 21, no. 05 (August 2012): 1250039. http://dx.doi.org/10.1142/s0218126612500399.

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Анотація:

A new, self-biasing, differential pair-based and high performance CMOS CCII circuit is proposed which uses no additional biasing voltage or current sources other than the two supply rails. The proposed circuit has high voltage swings on ports X and Y, very low equivalent impedance on port X, high equivalent impedances on ports Y and Z and also wideband voltage and current transfer ratios. The noise analysis of the proposed CCII circuit is studied. Input referred noise voltage at high impedance port Y and input referred noise current at low impedance port X are obtained to form the noise model. Some filter circuits are selected from the literature and their noise comparisons are performed. It is shown that the noise values can differ greatly even though the filter circuits or the passive element values are identical.

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42

Henderson, R. M., and L. P. B. Katehi. "Silicon-based micromachined packages for high-frequency applications." IEEE Transactions on Microwave Theory and Techniques 47, no. 8 (1999): 1563–69. http://dx.doi.org/10.1109/22.780409.

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43

Shitov, S. V. "Bolometer with high-frequency readout for array applications." Technical Physics Letters 37, no. 10 (October 2011): 932–34. http://dx.doi.org/10.1134/s1063785011100117.

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44

Rettich, T., and P. Wiedemuth. "High power generators for medium frequency sputtering applications." Journal of Non-Crystalline Solids 218 (September 1997): 50–53. http://dx.doi.org/10.1016/s0022-3093(97)00131-2.

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45

Jothilakshmi, Mrs P., and S. Raju. "Development of Multiband Antenna for High frequency Applications." Procedia Engineering 30 (2012): 1013–19. http://dx.doi.org/10.1016/j.proeng.2012.01.958.

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46

Annino, G., M. Fittipaldi, M. Martinelli, H. Moons, S. Van Doorslaer, and E. Goovaerts. "High-frequency EPR applications of open nonradiative resonators." Journal of Magnetic Resonance 200, no. 1 (September 2009): 29–37. http://dx.doi.org/10.1016/j.jmr.2009.05.011.

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47

Fergen, I., K. Seemann, A. v. d. Weth, and A. Schüppen. "Soft ferromagnetic thin films for high frequency applications." Journal of Magnetism and Magnetic Materials 242-245 (April 2002): 146–51. http://dx.doi.org/10.1016/s0304-8853(01)01185-4.

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48

JACOB, MOHAN V. "LOW LOSS DIELECTRIC MATERIALS FOR HIGH FREQUENCY APPLICATIONS." International Journal of Modern Physics B 23, no. 17 (July 10, 2009): 3649–54. http://dx.doi.org/10.1142/s0217979209063122.

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Анотація:

The microwave properties of some of the low cost materials which can be used in high frequency applications with low transmission losses are investigated in this paper. One of the most accurate microwave characterization techniques, Split Post Dielectric Resonator technique (SPDR) is used for the experimental investigation. The dielectric constants of the 3 materials scrutinized at room temperature and at 10K are 3.65, 2.42, 3.61 and 3.58, 2.48, 3.59 respectively. The corresponding loss tangent values are 0.00370, 0.0015, 0.0042 and 0.0025, 0.0009, 0.0025. The high frequency transmission losses are comparable with many of the conventional materials used in low temperature electronics and hence these materials could be implemented in such applications.

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49

SINGH, M., and S. P. SUD. "Mg–Mn–Al FERRITES FOR HIGH FREQUENCY APPLICATIONS." Modern Physics Letters B 14, no. 14 (June 20, 2000): 531–37. http://dx.doi.org/10.1142/s0217984900000677.

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Анотація:

The effect of substitution of nonmagnetic Al 3+ ions on the electrical and magnetic properties of Mg–Mn ferrites was studied in the ferrite series Mg 0.9 Mn 0.1 Al x Fe 2-x O 4 where x varied from 0–0.5 in steps of 0.1. The incorporation of Al 3+ ions in place of Fe 3+ ions results in a decrease of the lattice parameter owing to the smaller size of the substituted ions. The increase in dc resistivity has been observed at the expense of the deterioration of magnetic properties. A significant reduction in the values of the initial permeability, saturation magnetization and Curie temperature has been observed with successive increase of Al 3+ ions. These changes in properties have been explained on the basis of various models and other relevant factors, like modified cation distribution and magnetic interactions. The high dc resistivity, thereby lowering the dielectric losses, and the low value of the saturation magnetization are the desired characteristics of aluminium-substituted Mg–Mn ferrites used to prepare microwave devices operating in L, S and C bands.

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50

Chan, Helen Lai Wah, and I. L. Guy. "Piezoelectric Ceramic/Polymer Composites for High Frequency Applications." Key Engineering Materials 92-93 (February 1994): 275–300. http://dx.doi.org/10.4028/www.scientific.net/kem.92-93.275.

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