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Статті в журналах з теми "Hexagonal Boron Nitride Films"
Kester, D. J., K. S. Ailey, R. F. Davis, and K. L. More. "Phase evolution in boron nitride thin films." Journal of Materials Research 8, no. 6 (June 1993): 1213–16. http://dx.doi.org/10.1557/jmr.1993.1213.
Повний текст джерелаHarris, Stephen J., Anita M. Weiner, Gary L. Doll, and Wen-Jin Meng. "Selective chemical etching of hexagonal boron nitride compared to cubic boron nitride." Journal of Materials Research 12, no. 2 (February 1997): 412–15. http://dx.doi.org/10.1557/jmr.1997.0060.
Повний текст джерелаBuyuk, Bulent, Yapincak Goncu, A. Beril Tugrul, and Nuran Ay. "Swelling on neutron induced hexagonal boron nitride and hexagonal boron nitride-titanium diboride composites." Vacuum 177 (July 2020): 109350. http://dx.doi.org/10.1016/j.vacuum.2020.109350.
Повний текст джерелаChen, Xi, Chun Bo Tan, Kai Ran Luan, Shuai Wang, Fang Ye Li, Xiu Huan Liu, Ji Hong Zhao, Yan Jun Gao, and Zhan Guo Chen. "Epitaxially Grown Hexagonal Boron Nitride Films on Sapphire and Silicon Substrates." Key Engineering Materials 843 (May 2020): 90–96. http://dx.doi.org/10.4028/www.scientific.net/kem.843.90.
Повний текст джерелаKotova, L. V., L. A. Altynbaev, M. O. Zhukova, B. T. Hogan, A. Baldycheva, M. A. Kaliteevski, and V. P. Kochereshko. "Anisotropic Optical Properties of Hexagonal Boron Nitride Films." Bulletin of the Russian Academy of Sciences: Physics 86, no. 7 (July 2022): 813–16. http://dx.doi.org/10.3103/s1062873822070176.
Повний текст джерелаChecchetto, Riccardo, and Antonio Miotello. "Deuterium diffusion through hexagonal boron nitride thin films." Journal of Applied Physics 87, no. 1 (January 2000): 110–16. http://dx.doi.org/10.1063/1.371831.
Повний текст джерелаLee, Kang Hyuck, Hyeon-Jin Shin, Brijesh Kumar, Han Sol Kim, Jinyeong Lee, Ravi Bhatia, Sang-Hyeob Kim, et al. "Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films." Angewandte Chemie 126, no. 43 (September 9, 2014): 11677–81. http://dx.doi.org/10.1002/ange.201405762.
Повний текст джерелаLee, Kang Hyuck, Hyeon-Jin Shin, Brijesh Kumar, Han Sol Kim, Jinyeong Lee, Ravi Bhatia, Sang-Hyeob Kim, et al. "Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films." Angewandte Chemie International Edition 53, no. 43 (September 9, 2014): 11493–97. http://dx.doi.org/10.1002/anie.201405762.
Повний текст джерелаChng, Soon Siang, Minmin Zhu, Jing Wu, Xizu Wang, Zhi Kai Ng, Keke Zhang, Chongyang Liu, Maziar Shakerzadeh, Siuhon Tsang, and Edwin Hang Tong Teo. "Nitrogen-mediated aligned growth of hexagonal BN films for reliable high-performance InSe transistors." Journal of Materials Chemistry C 8, no. 13 (2020): 4421–31. http://dx.doi.org/10.1039/c9tc06733g.
Повний текст джерелаZhang, L., X. T. Wang, N. X. Ci, R. Q. Peng, G. Q. Zhao, L. J. Ci, and G. H. Min. "Fabrication, Optimization, and Mechanism Analysis of Graphene/Hexagonal Boron Nitride Stacked Film." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 44, no. 9 (December 13, 2022): 1163–77. http://dx.doi.org/10.15407/mfint.44.09.1163.
Повний текст джерелаДисертації з теми "Hexagonal Boron Nitride Films"
Alharbi, Abdulaziz. "Deformation of hexagonal boron nitride." Thesis, University of Manchester, 2018. https://www.research.manchester.ac.uk/portal/en/theses/deformation-of-hexagonal-boron-nitride(6c6013c4-8c17-4dec-b250-ed3f0baea7ed).html.
Повний текст джерелаCamurlu, Hasan Erdem. "Carbothermic Production Of Hexagonal Boron Nitride." Phd thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/3/12607808/index.pdf.
Повний текст джерелаB2O3 mixtures was slower than activated C&ndash
B2O3 mixtures. It was concluded that B4C is not a necessary intermediate product in the carbothermic production of h-BN. Some additives are known to catalytically affect the h-BN formation. The second aim of this study was to examine the catalytic effect of some alkaline earth metal oxides and carbonates, some transition metal oxides and cupric nitrate. It was found that addition of 10wt% CaCO3 into the B2O3+C mixture was optimum for increasing the rate and yield of h-BN formation and decreasing the B4C amount in the products and that the reaction was complete in 2 hours. CaCO3 was observed to be effective in increasing the rate and grain size of the formed h-BN. Addition of cupric nitrate together with CaCO3 provided a further increase in the size of the h-BN grains.
Khan, Aamar Farooq. "The electrochemistry of 2D hexagonal boron nitride." Thesis, Manchester Metropolitan University, 2018. http://e-space.mmu.ac.uk/620319/.
Повний текст джерелаAyoob, Raed. "Dielectric properties of hexagonal boron nitride polymer nanocomposites." Thesis, University of Southampton, 2017. https://eprints.soton.ac.uk/417272/.
Повний текст джерелаPelini, Thomas. "Optical properties of point defects in hexagonal boron nitride." Thesis, Montpellier, 2019. http://www.theses.fr/2019MONTS139.
Повний текст джерелаThe purpose of this thesis was to explore and caracterize optically the point defects in hexagonal boron nitride. The study of defects in this semiconductor is of fundamental importance firstly for the material science in which it plays a key role thanks to its lamellar structure (2D material) and its high thermal and chemical stability, and secondly for the quantum nanotechnology domain where its large bandgap (~ 6 eV) allows for exploiting deep levels point imperfections as «artificial atom» in the crystal lattice. During this thesis, defects in two spectral ranges have been studied: a first family emitting in the visible wavelengths, and a second one emitting in the ultraviolet range.Firstly, we made use of a scanning confocal microscope working in ambient conditions and at visible wavelengths. The recording of photoluminescence spatial maps permited to show the existence of localised hot spot of light, under the diffraction limit of the miscroscope, and emitting around 600 nm (2 eV). Time photon-correlation measurements revealed on one hand that we were dealing with single quantum emitters, and on the other hand allowed for probing the photodynamics of those systems, in particular at very long time-scale. Various photostability regimes are observed and discussed. Last but not least, power resolved study was also performed and demonstrated that a number of the emitters (~ 5%) are photo-stable at high excitation power and saturate at few millions counts per second: those point defects are one of the brightest single-photon source at room temperature in solid-state systems.Secondly, we explored the defects in the ultraviolet spectral range. A prerequisite to the engineering of defects in semiconductors for technological applications is the knowledge of their chemical origin. With this in mind, we studied shallow and deep levels in carbon-doped hBN samples by combining macro-photoluminescence and reflectance measurements. We showed the existence of new optically-active transitions (around 300 nm) and discussed the implication of carbon in these levels. The in-depth study of these levels have required the development of a new scanning micro-photoluminescence confocal microscope operating at 266 nm under cryogenic environment. The design and performances of the optical system are described, and the experimental challenges explained in details. Using this new setup, we went further into the examination of the deep levels. In particular, a study was carried out regarding the spatial correlation between these new spectral lines and the well-known point defect at 4.1 eV. Then, we used new crystals with isotopically-purified carbon doping as a strategy to investigate the long-standing question concerning the chemical origin of the 4.1 eV defect. Through this attempt, we brought to light the spatial dependence of the optical features for this specific emitter. Last but not least, we present our work dedicated to isolate the emission of a single 4.1 eV defect. We studied the photoluminescence of thin undoped flakes, pre-characterized with an electron microscope, that contain a low density of emitters, and inspected in particular their photostability in these thin crystals
Krishna, Kumar Roshan. "High temperature quantum transport in graphene/hexagonal-boron nitride heterostructures." Thesis, Lancaster University, 2017. http://eprints.lancs.ac.uk/88867/.
Повний текст джерелаElias, Christine. "Optical spectroscopy of hexagonal boron nitride : from bulk to monolayer." Thesis, Montpellier, 2020. http://www.theses.fr/2020MONTS054.
Повний текст джерелаHexagonal boron nitride (h-BN) or “white graphite” is a semiconductor which has a wide bandgap (~ 6 eV) and whose crystalline structure is close to that of graphite: it is formed by planes of atoms arranged in a hexagonal form. The interaction between the planes is of Van-der-Waals type. In 2004, h-BN demonstrated its ability to efficiently emit light in the deep UV (~ 200 nm) in crystals synthesized in NIMS laboratory in JAPAN. These results have attracted the attention of the community of semiconductors to the possibility of being used as a source of light for deep UV applications.The nature of the band gap in bulk h-BN has been the subject of a debate for over 12 years and it has been studied by theoretical calculations and by experiments. In 2016, the gap was demonstrated to be indirect based on 2-photon spectroscopy measurements. Indirect exciton and phonon-assisted recombination were observed by photoluminescence in h-BN.In h-BN, like in other 2D materials, when changing from a 3D system (massive) to a 2D system (monolayer), the nature of the gap changes. The calculations show a change from an indirect gap (bulk) to a direct gap (monolayer). This indirect-direct gap transition has never been observed in h-BN, and consequently the opto-electronic properties of the monolayer have never been studied. During this thesis, we studied for the first time the optical properties of the BN monolayer (mBN) by performing optical spectroscopy (macro-PL and reflectivity) in mBN samples grown by MBE at high temperature on graphite substrates (HOPG).Our results demonstrated for the first time the possibility to grow mBN (3.5 Å) by MBE technique. Our optical measurements demonstrated the presence of an optical transition at 6.1 eV associated to the direct gap in the mBN
Akyildiz, Ugur. "Effect Of Sodium Carbonate On Carbothermic Formation Of Hexagonal Boron Nitride." Master's thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612579/index.pdf.
Повний текст джерелаWoods, Colin. "Investigations into the interfacial interaction of graphene with hexagonal boron nitride." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/investigations-into-the-interfacial-interaction-of-graphene-with-hexagonal-boron-nitride(de99f43b-790f-4a32-b696-060ed700a5bd).html.
Повний текст джерелаCrane, Thomas Philip. "An NMR study of helium-3 adsorbed on hexagonal boron nitride." Thesis, Royal Holloway, University of London, 1998. http://digirep.rhul.ac.uk/items/1d14fa0b-8f29-7b7a-f32b-7c23bae45c35/1/.
Повний текст джерелаКниги з теми "Hexagonal Boron Nitride Films"
Tay, Roland Yingjie. Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4.
Повний текст джерелаLuches, Armando. Laser-assisted deposition of boron nitride thin films and nanotubes. Hauppauge, N.Y: Nova Science Publisher's, 2010.
Знайти повний текст джерелаMiyoshi, Kazuhisa. Fundamental tribological properties of ion-beam-deposited boron nitride films. Cleveland, Ohio: Lewis Research Center, 1989.
Знайти повний текст джерелаMiyoshi, Kazuhisa. Fundamental tribological properties of ion-beam-deposited boron nitride films. Cleveland, Ohio: Lewis Research Center, 1989.
Знайти повний текст джерелаPouch, John J. Auger electron spetroscopy, secondary ion mass spectrometry and optical characterization of a-C:H and BN films. [Cleveland, Ohio: National Aeronautics and Space Administration, Lewis Research Center, 1986.
Знайти повний текст джерелаNational Aeronautics and Space Administration (NASA) Staff. Exfoliation of Hexagonal Boron Nitride Via Ferric Chloride Intercalation. Independently Published, 2019.
Знайти повний текст джерелаTay, Roland Yingjie. Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride. Springer Singapore Pte. Limited, 2018.
Знайти повний текст джерелаTay, Roland Yingjie. Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride. Springer, 2018.
Знайти повний текст джерелаKazuhisa, Miyoshi, and United States. National Aeronautics and Space Administration., eds. Adhesion, friction, and deformatiom of ion-beam-deposited boron nitride films. [Washington, D.C.]: NASA, 1987.
Знайти повний текст джерелаKazuhisa, Miyoshi, and United States. National Aeronautics and Space Administration., eds. Adhesion, friction, and deformatiom of ion-beam-deposited boron nitride films. [Washington, D.C.]: NASA, 1987.
Знайти повний текст джерелаЧастини книг з теми "Hexagonal Boron Nitride Films"
Tay, Roland Yingjie. "Controllable Growth of Hexagonal Boron Nitride Films on Cu Foils." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 29–41. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_3.
Повний текст джерелаTay, Roland Yingjie. "Growth of Nanocrystalline Boron Nitride Films on Dielectric Substrates." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 43–51. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_4.
Повний текст джерелаTay, Roland Yingjie. "A New Single-Source Precursor for Monolayer h-BN and h-BCN Thin Films." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 99–115. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_7.
Повний текст джерелаAdachi, Sadao. "Hexagonal Boron Nitride (h-BN)." In Optical Constants of Crystalline and Amorphous Semiconductors, 127–36. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_12.
Повний текст джерелаFreudenstein, Regine, and Wilhelm Kulisch. "Nanocrystalline Cubic Boron Nitride Films." In Functional Properties of Nanostructured Materials, 289–94. Dordrecht: Springer Netherlands, 2006. http://dx.doi.org/10.1007/1-4020-4594-8_20.
Повний текст джерелаTay, Roland Yingjie. "Synthesis of Two-Dimensional Hexagonal Boron Nitride." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 1–10. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_1.
Повний текст джерелаAy, N., and I. Tore. "Pressureless Sintering of Hexagonal Boron Nitride Powders." In Materials Science Forum, 207–12. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-439-1.207.
Повний текст джерелаMajidi, Sima, Siamak Pakdel, Jafar Azamat, and Hamid Erfan-Niya. "Hexagonal Boron Nitride (h-BN) in Solutes Separation." In Two-Dimensional (2D) Nanomaterials in Separation Science, 163–91. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-72457-3_7.
Повний текст джерелаTay, Roland Yingjie. "Growth of Oriented Single Crystalline Hexagonal Boron Nitride Monolayers." In Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride, 69–98. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8809-4_6.
Повний текст джерелаKhelifa, Ronja, Nikolaus Flöry, Shadi Nashashibi, Konstantin Malchow, Markus Parzefall, Achint Jain, Takashi Taniguchi, Kenji Watanabe, and Lukas Novotny. "Waveguide-Coupled Disk Resonators Fabricated from Hexagonal Boron Nitride." In NATO Science for Peace and Security Series B: Physics and Biophysics, 325–27. Dordrecht: Springer Netherlands, 2021. http://dx.doi.org/10.1007/978-94-024-2138-5_37.
Повний текст джерелаТези доповідей конференцій з теми "Hexagonal Boron Nitride Films"
Umehara, N., I. Kuwahara, T. Kouno, H. Kominami, Y. Nakanishi, and K. Hara. "Chemical Vapor Deposition of Hexagonal Boron Nitride Films on c-plane Sapphire Substrates." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.h-2-2.
Повний текст джерелаScheuer, K. G., P. S. Kirwin, and R. G. DeCorby. "Coupling Emission from Strained Hexagonal Boron Nitride Thin Films to Monolithic Buckled Microcavities." In Quantum Information and Measurement. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/qim.2021.th4b.3.
Повний текст джерелаMin Kim, Soo. "Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819017.
Повний текст джерелаUmehara, N., A. Masuda, T. Shimizu, T. Kouno, H. Kominami, and K. Hara. "Free Exciton Emission from Hexagonal Boron Nitride Films Grown on Sapphire Substrates by Low Pressure Chemical Vapor Deposition." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.ps-8-6.
Повний текст джерелаLee, Jongho, Kristen N. Parrish, Sk Fahad Chowdhury, Tae-Jun Ha, Yufeng Hao, Li Tao, Ananth Dodabalapur, Rodney S. Ruoff, and Deji Akinwande. "State-of-the-art graphene transistors on hexagonal boron nitride, high-k, and polymeric films for GHz flexible analog nanoelectronics." In 2012 IEEE International Electron Devices Meeting (IEDM). IEEE, 2012. http://dx.doi.org/10.1109/iedm.2012.6479044.
Повний текст джерелаLee, Seung Hee, Seokho Moon, Hokyeong Jeong, Dong Yeong Kim, and Jong Kyu Kim. "Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing." In UV and Higher Energy Photonics: From Materials to Applications 2020, edited by Gilles Lérondel, Yong-Hoon Cho, and Atsushi Taguchi. SPIE, 2020. http://dx.doi.org/10.1117/12.2570856.
Повний текст джерелаDuong, Hanh. "Hexagonal Boron Nitride Nanophotonics." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819362.
Повний текст джерелаShandilya, Prasoon K., Johannes E. Fröch, Matthew Mitchell, David P. Lake, Sejeong Kim, Milos Toth, Bishnupada Behera, Chris Healey, Igor Aharonovich, and Paul E. Barclay. "Hexagonal boron nitride cavity optomechanics." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/cleo_si.2019.sf1j.3.
Повний текст джерелаBarjon, Julien, Alexandre Plaud, Lorenzo Sponza, Leonard Schue, Ingrid Stenger, Frederic Fossard, Kenji Watanabe, Takashi Taniguchi, Francois Ducastelle, and Annick Loiseau. "Luminescence efficiency of hexagonal boron nitride." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819024.
Повний текст джерелаMendelson, Noah, Igor Aharonovich, and Milos Toth. "Quantum emitters in hexagonal boron nitride." In Quantum Nanophotonic Materials, Devices, and Systems 2020, edited by Mario Agio, Cesare Soci, and Matthew T. Sheldon. SPIE, 2020. http://dx.doi.org/10.1117/12.2567599.
Повний текст джерелаЗвіти організацій з теми "Hexagonal Boron Nitride Films"
Ismach, Ariel, Harry Chao, Rodney S. Ruoff, and Sanjay Banerjee. Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films. Fort Belvoir, VA: Defense Technical Information Center, January 2014. http://dx.doi.org/10.21236/ada616097.
Повний текст джерелаMarquez Rossy, Andres E., Beth L. Armstrong, Amy M. Elliott, and Edgar Lara-Curzio. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects. Office of Scientific and Technical Information (OSTI), May 2017. http://dx.doi.org/10.2172/1357988.
Повний текст джерелаMuramatsu, Y., M. Grush, and T. A. Callcott. Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603470.
Повний текст джерелаSmith, W. L., T. A. Michalske, and R. R. Rye. The deposition of boron nitride and carbon films on silica glass fibers. Office of Scientific and Technical Information (OSTI), November 1993. http://dx.doi.org/10.2172/10110580.
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