Дисертації з теми "Heterostructures Heterostructures"
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Mand, R. S. "Characterisation and applications of heterostructures : Characterisation of GaAs/GaAlAs heterostructures and GaAs/GaAlAs double heterostructure electronic and photonic switches." Thesis, University of Bradford, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.371479.
Повний текст джерелаLeung, Chi Wah. "Metallic magnetic heterostructures." Thesis, University of Cambridge, 2002. https://www.repository.cam.ac.uk/handle/1810/34608.
Повний текст джерелаZhao, F. "Graphene-diamond heterostructures." Thesis, University College London (University of London), 2015. http://discovery.ucl.ac.uk/1462910/.
Повний текст джерелаSlobodskyy, Taras. "Semimagnetic heterostructures for spintronics." Doctoral thesis, [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=983425892.
Повний текст джерелаFromhold, Timothy Mark. "Magnetotunnelling in semiconductor heterostructures." Thesis, University of Nottingham, 1990. http://eprints.nottingham.ac.uk/14162/.
Повний текст джерелаKo, D. Y. K. "Quantum tunnelling in heterostructures." Thesis, University of Exeter, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384673.
Повний текст джерелаChung, Sung-Yong. "Si/SiGe heterostructures materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors /." Columbus, Ohio : Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1132244278.
Повний текст джерелаColson, Harry George. "Strain relaxation in semiconductor heterostructures." Thesis, University of Surrey, 1997. http://epubs.surrey.ac.uk/843607/.
Повний текст джерелаWarburton, Paul Anthony. "Quasiparticle trapping in superconducting heterostructures." Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318419.
Повний текст джерелаLeadbeater, Mark Levence. "Resonant tunnelling in semiconductor heterostructures." Thesis, University of Nottingham, 1990. http://eprints.nottingham.ac.uk/28733/.
Повний текст джерелаChrastina, Daniel. "Transport in silicon-germanium heterostructures." Thesis, University of Warwick, 2001. http://wrap.warwick.ac.uk/2574/.
Повний текст джерелаWhite, James Antony. "Many-body effects in heterostructures." Thesis, University of Exeter, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235959.
Повний текст джерелаSarkozy, Stephen Joseph. "Mesoscopic transport in undoped heterostructures." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.612534.
Повний текст джерелаEnglish, David. "Spin dynamics in semiconductor heterostructures." Thesis, University of Southampton, 2012. https://eprints.soton.ac.uk/340899/.
Повний текст джерелаWee, Siew Fong. "Interdiffusion of semiconductor alloy heterostructures." Thesis, University of Surrey, 1998. http://epubs.surrey.ac.uk/844156/.
Повний текст джерелаYu, Sisheng. "Spin Dynamics in Antiferromagnetic Heterostructures." The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1586599000240225.
Повний текст джерелаSarı, Hüseyin. "DX centers in InAlAs heterostructures /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2001. http://wwwlib.umi.com/cr/ucsd/fullcit?p9997570.
Повний текст джерелаBoddison-Chouinard, Justin. "Fabricating van der Waals Heterostructures." Thesis, Université d'Ottawa / University of Ottawa, 2018. http://hdl.handle.net/10393/38511.
Повний текст джерелаRodriguez-Vega, Martin Alexander. "Disorder Effects in Dirac Heterostructures." W&M ScholarWorks, 2016. https://scholarworks.wm.edu/etd/1477068246.
Повний текст джерелаSalomon, Damien. "Croissance, propriétés optiques et intégration d'hétérostructures radiales InGaN/GaN autour de fils auto-assemblés de GaN crûs sur saphir et silicium." Thesis, Grenoble, 2013. http://www.theses.fr/2013GRENY052.
Повний текст джерелаThis work reports on the realization by metal organic vapor phase epitaxy of visible light emitting diodes based on GaN wires grown on Si(111) with a focus on understanding the wires growth mechanisms and the properties of InGaN/GaN core/shell heterostructures grown around them. First we report the MOVPE growth of –c oriented GaN wires on sapphire. We demonstrate that the injection of silane during the growth induces the formation of a SiNx passivation layer around the GaN wires, preventing the lateral expansion. The silane flow can be stopped after a certain time without modifying the wire geometry. This phenomenon is used to control the position of the InGaN/GaN multiple quantum well shells along the wires. The wire growth on sapphire has then been transferred to silicon substrate thanks to the deposition of a thin AlN buffer layer prior to the wire growth. The deposition of InGaN/GaN core/shell heterostructures on the non-polar m-plane side facets of the wires and the influence of different growth parameters on the light emission properties of the quantum wells are then studied. Several types of quantum wells grown on different facets of the wire surface are observed. These different families emit light at different wavelengths that have been indexed thanks to cathodoluminescence mapping. The indium concentration in the quantum wells deposited is estimated between 8 and 24 %, depending on the growth conditions. This estimation has been made by comparing the emission wavelength of the quantum well to the recombination energy of electrons and wells simulated using the 8x8 band k.p theory for electron and hole masses. Finally, complete LED structures have been deposited on GaN wires by MOVPE and blue electroluminescence at 450 nm has been measured on single wires and assemblies of wires on Si(111)
González, Cuxart Marc. "Magnetic metal-organic / topological insulator heterostructures." Doctoral thesis, Universitat Autònoma de Barcelona, 2019. http://hdl.handle.net/10803/667359.
Повний текст джерелаThurmer, Dominic J. "Nanomembrane-based hybrid semiconductor-superconductor heterostructures." Doctoral thesis, Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-71217.
Повний текст джерелаYildirim, Hasan. "Nonlinear Optical Properties Of Semiconductor Heterostructures." Phd thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/12607438/index.pdf.
Повний текст джерелаschl-Teller type potential which has been rarely considered in this area. It has a tunable asymmetry parameter, making it a good candidate to investigate the effect of the asymmetry on the nonlinear optical properties. The calculated nonlinear quantities include nonlinear absorption coefficient, second-harmonic generation, optical rectification, third-harmonic generation and the intensity-dependent refractive index. The effects of the DC electric field on the corresponding nonlinearities are also studied. The results are in good agreement with the results obtained in other types of quantum wells, such as square and parabolic quantum wells. The effects of the Coulomb interaction among the electrons on the nonlinear intersubband absorption are considered within the rotating wave approximation. The result is applied to a Si-delta-doped, square quantum well in which the Coulomb interaction among the electrons are relatively important, since there has been no work on the nonlinear absorption spectrum of the Si-delta-doped quantum well. The results are found to be new and interesting, especially when a DC electric field is included in the calculations.
Sharma, Adesh. "Electronic transport in GaAs-AlGaAs heterostructures." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239264.
Повний текст джерелаWong, Siu Ling. "Magneto-optical studies of semiconductor heterostructures." Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335820.
Повний текст джерелаMartin, Robert W. "Quantum magnetotransport in strained layer heterostructures." Thesis, University of Oxford, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315751.
Повний текст джерелаKinder, David. "Magneto-optical studies of semiconductor heterostructures." Thesis, University of Oxford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389017.
Повний текст джерелаWiggins, Graham C. "Fourier transform spectroscopy of semiconductor heterostructures." Thesis, University of Oxford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.276832.
Повний текст джерелаChang, Chin-chi. "Magneto-optical studies of semiconductor heterostructures." Thesis, University of Oxford, 1998. http://ora.ox.ac.uk/objects/uuid:f25fb6fb-18d9-4750-8ca2-191201c27fba.
Повний текст джерелаGelsthorpe, Andrew James. "A.E.S. characterisation of small dimensional heterostructures." Thesis, University of York, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369332.
Повний текст джерелаLiu, Xian Wei. "Dislocations in strained-layer semiconductor heterostructures." Thesis, Open University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299912.
Повний текст джерелаPettersen, Eirik. "Electron transport in gated undoped heterostructures." Thesis, University of Cambridge, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627583.
Повний текст джерелаVaughan, Thomas Alexander. "Magneto-optics of InAs/GaSb heterostructures." Thesis, University of Oxford, 1995. http://ora.ox.ac.uk/objects/uuid:52b3d4c8-04f2-4ee8-b5a5-382934807722.
Повний текст джерелаKOEBEL, ARNAUD. "Heterostructures gase et inse sur si." Paris 7, 1997. http://www.theses.fr/1997PA077123.
Повний текст джерелаWang, Zhiguang. "Magnetoelectric Effect in Ferroelectric-Ferromagnetic Heterostructures." Diss., Virginia Tech, 2014. http://hdl.handle.net/10919/48168.
Повний текст джерелаPh. D.
Kaiser, Franz. "Current and noise in driven heterostructures." kostenfrei, 2009. http://d-nb.info/994443641/34.
Повний текст джерелаUddin, Md Tamez. "Metal oxide heterostructures for efficient photocatalysts." Phd thesis, Université Sciences et Technologies - Bordeaux I, 2013. http://tel.archives-ouvertes.fr/tel-00879226.
Повний текст джерелаWestover, Richard. "Synthesis of Multiple Constituent Ferecrystal Heterostructures." Thesis, University of Oregon, 2016. http://hdl.handle.net/1794/19712.
Повний текст джерелаVuong, Phuong. "Optical spectroscopy of boron nitride heterostructures." Thesis, Montpellier, 2018. http://www.theses.fr/2018MONTS075/document.
Повний текст джерелаHexagonal boron nitride (h-BN) is a wide bandgap (~ 6 eV) semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The indirect nature of the bandgap in h-BN is investigated by both theoretical calculations and experiments. An indirect excion and phonon-assisted reombinations in h-BN are observed in photoluminescene spectroscopy.This thesis focus on the optical properties of bulk and epilayers of h-BN. We investigated samples from different sources grown different methods in order to confirm the intrinsic optical properties of h-BN. We report the impact of the phonon symmetry on the optical response of h-BN by performing polarization-resolved PL measurements. From them, we will measure the contribution of all the phonon-assisted recombination which was not detected before this thesis. We follow by addressing the origin of the fine structure of the phonon-assisted recombinations in h-BN. It arises from overtones involving up to six low-energy interlayer shear phonon modes, with a characteristic energy of about 6.8 meV.Raman and photoluminescence measurements are recorded to quantify the influence of isotope effects on optical properties of h-BN as well as the modifications of van de Waals interactions linked to utilization of 10B and 11B or natural Boron for the growth of bulk h-BN crystals.Finally, we study h-BN thin epilayers grown by Molecular Beam Epitaxy at Nottingham University, atomic force microscopy (AFM) images and photoluminescence features are combined to confirm the first observation of phonon-assisted recombination in high quality thin h-BN epilayers grown on c-plane sapphire and Highly Ordered Pyrolitic Graphite. This demontrates that large scale growth of h-BN by epitaxy is getting a technologically required maturity
Preisler, Edward J. McGill T. C. "Investigation of novel semiconductor heterostructure systems : I. Cerium oxide/silicon heterostructures ; II. 6.1 Å semiconductor-based avalanche photodiodes /." Diss., Pasadena, Calif. : California Institute of Technology, 2003. http://resolver.caltech.edu/CaltechETD:etd-06022003-071834.
Повний текст джерелаBristowe, Nicholas Charles. "Theoretical study of polar complex oxide heterostructures." Thesis, University of Cambridge, 2012. https://www.repository.cam.ac.uk/handle/1810/265542.
Повний текст джерелаWang, Jianfeng, and 王建峰. "Field modulation on transport properties in heterostructures composed of perovskite oxides." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B47147076.
Повний текст джерелаHarrison, Paul Anthony. "Resonant tunnelling and luminescence in coupled quantum wells." Thesis, University of Nottingham, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.363933.
Повний текст джерелаStraube, Urs Norman. "Fabrication and characterization of p-MOSFETS with a strained SiGe channel." Thesis, University of Southampton, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269943.
Повний текст джерелаMauro, Diego. "Electronic properties of Van der Waals heterostructures." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016. http://amslaurea.unibo.it/10565/.
Повний текст джерелаKneip, Martin K. "Magnetization dynamics in diluted magnetic semiconductor heterostructures." kostenfrei, 2008. http://hdl.handle.net/2003/25822.
Повний текст джерелаBach, Peter. "Growth and characterization of NiMnSb-based heterostructures." Doctoral thesis, [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=98030282X.
Повний текст джерелаMarsden, Alexander J. "Van der Waals epitaxy in graphene heterostructures." Thesis, University of Warwick, 2015. http://wrap.warwick.ac.uk/77193/.
Повний текст джерелаMak, Wing Yee. "Transport experiments in undoped GaAs/A1GaAs heterostructures." Thesis, University of Cambridge, 2013. https://www.repository.cam.ac.uk/handle/1810/252296.
Повний текст джерелаPang, Brian SiewHan. "Control of superconductivity in cuprate/manganite heterostructures." Thesis, University of Cambridge, 2004. https://www.repository.cam.ac.uk/handle/1810/34610.
Повний текст джерела