Статті в журналах з теми "Heterojunction semiconductor devices"
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WESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS." SPIN 03, no. 04 (December 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
Повний текст джерелаSang, Xianhe, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan, and Dandan Sang. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction." Molecules 28, no. 3 (January 30, 2023): 1334. http://dx.doi.org/10.3390/molecules28031334.
Повний текст джерелаMizuno, Tomohisa, Mitsuo Hasegawa, and Toshiyuki Sameshima. "Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors." Key Engineering Materials 470 (February 2011): 72–78. http://dx.doi.org/10.4028/www.scientific.net/kem.470.72.
Повний текст джерелаGaudillat, Pierre, Jean Moïse Suisse, and Marcel Bouvet. "Humidity Insensitive Conductometric Sensors for Ammonia Sensing." Key Engineering Materials 605 (April 2014): 181–84. http://dx.doi.org/10.4028/www.scientific.net/kem.605.181.
Повний текст джерелаZhuiykov, Serge, and Zhen Yin Hai. "Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions." Key Engineering Materials 765 (March 2018): 8–11. http://dx.doi.org/10.4028/www.scientific.net/kem.765.8.
Повний текст джерелаMi, Yi Lin. "Spin Diffusion in the Finite Magnetic Heterojunction." Key Engineering Materials 727 (January 2017): 410–14. http://dx.doi.org/10.4028/www.scientific.net/kem.727.410.
Повний текст джерелаNi, Junhao, Quangui Fu, Kostya (Ken) Ostrikov, Xiaofeng Gu, Haiyan Nan, and Shaoqing Xiao. "Status and prospects of Ohmic contacts on two-dimensional semiconductors." Nanotechnology 33, no. 6 (November 18, 2021): 062005. http://dx.doi.org/10.1088/1361-6528/ac2fe1.
Повний текст джерелаYu, Edward T. "Cross-Sectional Scanning Tunneling Microscopy of Semiconductor Heterostructures." MRS Bulletin 22, no. 8 (August 1997): 22–26. http://dx.doi.org/10.1557/s0883769400033765.
Повний текст джерелаKelly, M. J. "A second decade of semiconductor heterojunction devices." Microelectronics Journal 24, no. 8 (December 1993): 723–39. http://dx.doi.org/10.1016/0026-2692(93)90073-n.
Повний текст джерелаRashid, Muhammad Haroon, Ants Koel, and Toomas Rang. "Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes." Materials Science Forum 1004 (July 2020): 490–96. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.490.
Повний текст джерелаGorman, Brian P., Andrew G. Norman, and Yanfa Yan. "Atom Probe Analysis of III–V and Si-Based Semiconductor Photovoltaic Structures." Microscopy and Microanalysis 13, no. 6 (November 14, 2007): 493–502. http://dx.doi.org/10.1017/s1431927607070894.
Повний текст джерелаEo, Jung Sun, Jaeho Shin, and Jung Sun Eo. "Artificial Synapse Based on 1D/2D Hybrid Heterostructure." ECS Meeting Abstracts MA2022-01, no. 57 (July 7, 2022): 2365. http://dx.doi.org/10.1149/ma2022-01572365mtgabs.
Повний текст джерелаGardner, Carl L., and Christian Ringhofer. "The Chapman-Enskog Expansion and the Quantum Hydrodynamic Model for Semiconductor Devices." VLSI Design 10, no. 4 (January 1, 2000): 415–35. http://dx.doi.org/10.1155/2000/91289.
Повний текст джерелаAlesgerovna, Elmira. "İNFLUENCE OF THİN FİLMS ON PHOTOELECTRİC PROPERTİES OF SOLAR CELLS BASED ON p-GaAs/n-Cd0.25Zn0.75S0.8Te0.2 HETEROJUNCTİONS." Grail of Science, no. 18-19 (September 4, 2022): 211–13. http://dx.doi.org/10.36074/grail-of-science.26.08.2022.37.
Повний текст джерелаWang, Qinglin, Yu Yao, Xianhe Sang, Liangrui Zou, Shunhao Ge, Xueting Wang, Dong Zhang, et al. "Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction." Nanomaterials 12, no. 21 (October 26, 2022): 3773. http://dx.doi.org/10.3390/nano12213773.
Повний текст джерелаHoushmand, M., M. H. Zandi, and Nima E. Gorji. "Hybrid Structure for Solar Cells Based on SWCNT/CdS." Nano Hybrids 8 (December 2014): 15–26. http://dx.doi.org/10.4028/www.scientific.net/nh.8.15.
Повний текст джерелаLong, Gen, Kenneth Sabalo, Natalie MacDonald, Michael Beattie, and Mostafa Sadoqi. "Photocurrent Enhancement by Introducing Gold Nanoparticles in Nanostructures Based Heterojunction Solar Cell Device." MRS Advances 2, no. 15 (2017): 817–24. http://dx.doi.org/10.1557/adv.2017.146.
Повний текст джерелаSánchez-Vergara, María Elena, Raquel Carrera-Téllez, Paulina Smith-Ruiz, Citlalli Rios, and Roberto Salcedo. "The Effect of the Indium(III) Phthalocyanine Chloride Films on the Behavior of Flexible Devices of Flat and Disperse Heterojunction." Coatings 9, no. 10 (October 17, 2019): 673. http://dx.doi.org/10.3390/coatings9100673.
Повний текст джерелаPEARTON, S. J. "ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY." International Journal of Modern Physics B 07, no. 28 (December 30, 1993): 4687–761. http://dx.doi.org/10.1142/s0217979293003814.
Повний текст джерелаMendil, Nesrine, Mebarka Daoudi, Zakarya Berkai, and Abderrahmane Belghachi. "Charge Carrier Mobility Behavior in the SubPc/C60 Planar Heterojunction." Zeitschrift für Naturforschung A 73, no. 11 (October 25, 2018): 1047–52. http://dx.doi.org/10.1515/zna-2018-0142.
Повний текст джерелаRay, Biswajit, Aditya G. Baradwaj, Mohammad Ryyan Khan, Bryan W. Boudouris, and Muhammad Ashraful Alam. "Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells." Proceedings of the National Academy of Sciences 112, no. 36 (August 19, 2015): 11193–98. http://dx.doi.org/10.1073/pnas.1506699112.
Повний текст джерелаGrätzel, Michael. "Dye-Sensitized Solid-State Heterojunction Solar Cells." MRS Bulletin 30, no. 1 (January 2005): 23–27. http://dx.doi.org/10.1557/mrs2005.4.
Повний текст джерелаTalukdar, Keka, and Anil Shantappa. "Electrical Transport Properties of Carbon Nanotube Metal-Semiconductor Heterojunction." International Journal of Nanoscience 15, no. 05n06 (October 2016): 1660009. http://dx.doi.org/10.1142/s0219581x16600097.
Повний текст джерелаSivula, Kevin. "(Invited) Bulk Heterojunction Organic Semiconductor Photoelectrodes and Photocatalysts for Solar-Driven Water Splitting." ECS Meeting Abstracts MA2022-01, no. 36 (July 7, 2022): 1571. http://dx.doi.org/10.1149/ma2022-01361571mtgabs.
Повний текст джерелаGrimmeiss, Hermann G., and Erich Kasper. "Today’s Mainstream Microelectronics - A Result of Technological, Market and Human Enterprise." Materials Science Forum 608 (December 2008): 1–16. http://dx.doi.org/10.4028/www.scientific.net/msf.608.1.
Повний текст джерелаChang, Xiao Ying, and Qian Qiong Wu. "Photovoltaic Solar Cells with Metal Oxide Semiconductor Anode and Mutilayer." Applied Mechanics and Materials 209-211 (October 2012): 1758–61. http://dx.doi.org/10.4028/www.scientific.net/amm.209-211.1758.
Повний текст джерелаGnana Prakash, A. P., and N. Pushpa. "Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices." Solid State Phenomena 239 (August 2015): 37–71. http://dx.doi.org/10.4028/www.scientific.net/ssp.239.37.
Повний текст джерелаYusoff, Nurul Huda, Nur Izzah Abd Azes, and Surani Buniran. "Modification of Thin Film Surface Morphology by Thermal Annealing Process to Enhance Organic Photovoltaic Solar Cell Performance." Advanced Materials Research 879 (January 2014): 144–48. http://dx.doi.org/10.4028/www.scientific.net/amr.879.144.
Повний текст джерелаRahman, Md Wahidur, Chandan Joishi, Nidhin Kurian Kalarickal, Hyunsoo Lee, and Siddharth Rajan. "High-Permittivity Dielectric for High-Performance Wide Bandgap Electronic Devices." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1210. http://dx.doi.org/10.1149/ma2022-02321210mtgabs.
Повний текст джерелаJones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu, and S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.
Повний текст джерелаDupuis, R. D. "III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition." IEEE Journal of Selected Topics in Quantum Electronics 6, no. 6 (November 2000): 1040–50. http://dx.doi.org/10.1109/2944.902153.
Повний текст джерелаVecchi, Pierpaolo, Alberto Piccioni, Irene Carrai, Raffaello Mazzaro, Michele Mazzanti, Vito Cristino, Stefano Caramori, and Luca Pasquini. "Understanding the Carrier Dynamics of Complex Heterojunctions for Water Splitting through Wavelength-Dependent Intensity Modulated Photocurrent Spectroscopy." ECS Meeting Abstracts MA2022-02, no. 48 (October 9, 2022): 1871. http://dx.doi.org/10.1149/ma2022-02481871mtgabs.
Повний текст джерелаZheng, Li, Xinhong Cheng, Peiyi Ye, Lingyan Shen, Qian Wang, Dongliang Zhang, Zhongjian Wang, Yuehui Yu, and Xinke Yu. "Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices." Journal of Materials Chemistry C 4, no. 47 (2016): 11067–73. http://dx.doi.org/10.1039/c6tc03514k.
Повний текст джерелаGan, Kwang Jow, Zheng Jie Jiang, Cher Shiung Tsai, Din Yuen Chan, Jian Syong Huang, Zhen Kai Kao, and Wen Kuan Yeh. "Design of NDR-Based Oscillators Suitable for the Nano-Based BiCMOS Technique." Applied Mechanics and Materials 328 (June 2013): 669–73. http://dx.doi.org/10.4028/www.scientific.net/amm.328.669.
Повний текст джерелаWoodall, Jerry. "Electronic properties of semiconductor interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 334–37. http://dx.doi.org/10.1017/s0424820100126470.
Повний текст джерелаWang, Feifei, Yuehua Dai, Cheng Ding, Bing Yang, Xing Li, and Lin Jin. "Improved rectification characteristics of the GR/Blue P/GR selector by doping: First-principles study." Journal of Applied Physics 132, no. 8 (August 28, 2022): 085702. http://dx.doi.org/10.1063/5.0090885.
Повний текст джерелаAnderson, Travis J., Karl D. Hobart, Luke O. Nyakiti, Virginia D. Wheeler, Rachael L. Myers-Ward, Joshua D. Caldwell, Francisco J. Bezares, et al. "Electrical Characterization of the Graphene-SiC Heterojunction." Materials Science Forum 717-720 (May 2012): 641–44. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.641.
Повний текст джерелаYu, Hang, Jianlin Zhou, Yuanyuan Hao, and Yao Ni. "Effective performance improvement of organic thin film transistors with multi-layer modifications." European Physical Journal Applied Physics 91, no. 3 (September 2020): 30201. http://dx.doi.org/10.1051/epjap/2020200138.
Повний текст джерелаCheung, Ka, Jerry Yu, and Derek Ho. "Determination of the Optimal Sensing Temperature in Pt/Ta2O5/MoO3 Schottky Contacted Nanobelt Straddling Heterojunction." Sensors 18, no. 11 (November 5, 2018): 3770. http://dx.doi.org/10.3390/s18113770.
Повний текст джерелаHasegawa, Hideki, Hajime Fujikura, and Hiroshi Okada. "Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires." MRS Bulletin 24, no. 8 (August 1999): 25–30. http://dx.doi.org/10.1557/s0883769400052866.
Повний текст джерелаAhlgren, D. C., S. J. Jeng, D. Nguyen-Ngoc, K. Stein, D. Sunderland, M. Gilbert, J. Malinowski, et al. "Si-Ge heterojunction bipolar technology for high-speed integrated circuits." Canadian Journal of Physics 74, S1 (December 1, 1996): 159–66. http://dx.doi.org/10.1139/p96-851.
Повний текст джерелаMa, Lanchao, Shuixing Dai, Xiaowei Zhan, Xinyang Liu, and Yu Li. "Convenient fabrication of conjugated polymer semiconductor nanotubes and their application in organic electronics." Royal Society Open Science 5, no. 8 (August 2018): 180868. http://dx.doi.org/10.1098/rsos.180868.
Повний текст джерелаSCHRODER, DIETER K. "PROGRESS IN SIC MATERIALS/DEVICES AND THEIR COMPETITION." International Journal of High Speed Electronics and Systems 21, no. 01 (March 2012): 1250009. http://dx.doi.org/10.1142/s0129156412500097.
Повний текст джерелаProkes, S. M., and Kang L. Wang. "Novel Methods of Nanoscale Wire Formation." MRS Bulletin 24, no. 8 (August 1999): 13–19. http://dx.doi.org/10.1557/s0883769400052842.
Повний текст джерелаRashid, Muhammad Haroon, Ants Koel, and Toomas Rang. "Effects of the Inclusion of Armchair Graphene Nanoribbons on the Electrical Conduction Properties of NN-Heterojunction 4H-6H/SiC Diodes." Materials Science Forum 962 (July 2019): 29–35. http://dx.doi.org/10.4028/www.scientific.net/msf.962.29.
Повний текст джерелаWang, Helong, Guanchen Liu, Chongyang Xu, Fanming Zeng, Xiaoyin Xie, and Sheng Wu. "Surface Passivation Using N-Type Organic Semiconductor by One-Step Method in Two-Dimensional Perovskite Solar Cells." Crystals 11, no. 8 (August 12, 2021): 933. http://dx.doi.org/10.3390/cryst11080933.
Повний текст джерелаIkenoue, Takumi, Satoshi Yoneya, Masao Miyake, and Tetsuji Hirato. "Epitaxial Growth and Bandgap Control of Ni1-xMgxO Thin Film Grown by Mist Chemical Vapor Deposition Method." MRS Advances 5, no. 31-32 (2020): 1705–12. http://dx.doi.org/10.1557/adv.2020.219.
Повний текст джерелаSARGENT, EDWARD (TED) H., and J. M. (JIMMY) XU. "LATERAL INJECTION LASERS." International Journal of High Speed Electronics and Systems 09, no. 04 (December 1998): 941–78. http://dx.doi.org/10.1142/s0129156498000397.
Повний текст джерелаNozaki, Tomohiro, Yi Ding, and Ryan Gresback. "Plasma Synthesis of Silicon Nanocrystals: Application to Organic/Inorganic Photovoltaics through Solution Processing." Materials Science Forum 783-786 (May 2014): 2002–4. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.2002.
Повний текст джерелаJanipour, Mohsen, I. Burc Misirlioglu, and Kursat Sendur. "A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions." Materials 12, no. 15 (July 29, 2019): 2412. http://dx.doi.org/10.3390/ma12152412.
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