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Статті в журналах з теми "Heterojunction semiconductor devices"
WESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS." SPIN 03, no. 04 (December 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
Повний текст джерелаSang, Xianhe, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan, and Dandan Sang. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction." Molecules 28, no. 3 (January 30, 2023): 1334. http://dx.doi.org/10.3390/molecules28031334.
Повний текст джерелаMizuno, Tomohisa, Mitsuo Hasegawa, and Toshiyuki Sameshima. "Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors." Key Engineering Materials 470 (February 2011): 72–78. http://dx.doi.org/10.4028/www.scientific.net/kem.470.72.
Повний текст джерелаGaudillat, Pierre, Jean Moïse Suisse, and Marcel Bouvet. "Humidity Insensitive Conductometric Sensors for Ammonia Sensing." Key Engineering Materials 605 (April 2014): 181–84. http://dx.doi.org/10.4028/www.scientific.net/kem.605.181.
Повний текст джерелаZhuiykov, Serge, and Zhen Yin Hai. "Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions." Key Engineering Materials 765 (March 2018): 8–11. http://dx.doi.org/10.4028/www.scientific.net/kem.765.8.
Повний текст джерелаMi, Yi Lin. "Spin Diffusion in the Finite Magnetic Heterojunction." Key Engineering Materials 727 (January 2017): 410–14. http://dx.doi.org/10.4028/www.scientific.net/kem.727.410.
Повний текст джерелаNi, Junhao, Quangui Fu, Kostya (Ken) Ostrikov, Xiaofeng Gu, Haiyan Nan, and Shaoqing Xiao. "Status and prospects of Ohmic contacts on two-dimensional semiconductors." Nanotechnology 33, no. 6 (November 18, 2021): 062005. http://dx.doi.org/10.1088/1361-6528/ac2fe1.
Повний текст джерелаYu, Edward T. "Cross-Sectional Scanning Tunneling Microscopy of Semiconductor Heterostructures." MRS Bulletin 22, no. 8 (August 1997): 22–26. http://dx.doi.org/10.1557/s0883769400033765.
Повний текст джерелаKelly, M. J. "A second decade of semiconductor heterojunction devices." Microelectronics Journal 24, no. 8 (December 1993): 723–39. http://dx.doi.org/10.1016/0026-2692(93)90073-n.
Повний текст джерелаRashid, Muhammad Haroon, Ants Koel, and Toomas Rang. "Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes." Materials Science Forum 1004 (July 2020): 490–96. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.490.
Повний текст джерелаДисертації з теми "Heterojunction semiconductor devices"
Tayarani-Najaran, M. H. "Traps at the silicon/silicon-dioxide heterojunction." Thesis, University of Bradford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.278879.
Повний текст джерелаRoberts, Victoria. "The growth and characterisation of silicon alloys for heterojunction bipolar transistor applications." Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259846.
Повний текст джерелаQuinones, Eduardo Jose. "Heterojunction MOSFET devices using column IV alloys grown by UHVCVD /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Повний текст джерелаLiu, Mingzhen. "Planar heterojunction perovskite solar cells via vapour deposition and solution processing." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:89a275a8-5ec8-442c-a114-246a44dbd570.
Повний текст джерелаKinder, Erich W. "Fabrication of All-Inorganic Optoelectronic Devices Using Matrix Encapsulation of Nanocrystal Arrays." Bowling Green State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1339719904.
Повний текст джерелаNakazawa, Satoshi. "Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices." Kyoto University, 2019. http://hdl.handle.net/2433/244553.
Повний текст джерелаHey, Andrew Stuart. "Series interconnects and charge extraction interfaces for hybrid solar cells." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:f19e44a8-e394-4859-9649-734116bc22b8.
Повний текст джерелаGanbold, Tamiraa. "Development of quantum well structures for multi band photon detection." Doctoral thesis, Università degli studi di Trieste, 2015. http://hdl.handle.net/10077/11801.
Повний текст джерелаLa ricerca qui presentata è incentrata sullo sviluppo di tecnologie innovative per la produzione di rivelatori di posizione di fasci fotonici veloci (pBPM) per applicazioni in luce di sincrotrone (SR) e laser a elettroni liberi (FEL). Nel nostro lavoro abbiamo proposto un rilevatore in-situche ha dimostrato velocità di risposta ed omogeneità sia per scopi di diagnostica che di calibrazione. I dispositivi sono basati su pozzi quantici (QW) dimateriali semiconduttori InGaAs / InAlAs,che offrono diversi vantaggi grazie alla loro gap di banda diretta e a bassa energia, e all’alta mobilità elettronica a temperatura ambiente. I QW metamorfici diIn0.75Ga0.25As/In0.75Al0.25As contenenti un gas di elettroni bidimensionali (2DEG) sono staticresciuti tramite epitassia a faci molecolari (MBE). Tali materiali presentano alcune differenze notevoli rispetto al diamante, che è il materiale utilizzato per i rivelatori commerciali allo stato dell’arte. Innanzitutto, i costi di produzione e di fabbricazione sono molto più bassi. Poi, il coefficiente di assorbimento è molto superiore al diamante su una vasta gamma di energie di raggi X, il che li rende ampiamente complementari in possibili applicazioni. Inoltre, utilizzando semiconduttori composti si possono fabbricare dispositivi con diverse combinazioni di materiali per la barriera ed il QW;ciòha permesso di ridurre la gap di energia fino a 0.6 eV. La disponibilità e la ripetibilità di fabbricazione dei dispositivi è migliore rispetto a quelle del diamante. Quattro configurazioni di dispositivi a QW pixelati sono stati testati con diverse fonti di luce, come radiazione di sincrotrone, tubo a raggi X convenzionali e laser ultra veloce nel vicinoUV. In questa tesi, dopo aver introdotto i dispositivi a QW per utilizzo comepBPM, saranno riportati e discussii risultati più importanti ottenuti. Tali risultati indicano che questi rivelatori rispondono con tempi di 100-ps a impulsi laser ultraveloci, cioè un fattore 6 più velocirispetto a rivelatori a semiconduttori commerciali allo stato dell’arte. La precisione raggiunta nella stima della posizione del fascio fotonico è di 800nm, da confrontare con i 150nm di rivelatori a diamante commerciali. Inoltre, i nostri rivelatori di fotoni a QW lavorano a tensioni molto inferiori rispetto aipBPMs esistenti.Infine, test con raggi X da radiazione di sincrotrone mostrano come questi dispositivi presentano elevate efficienze di raccolta di carica, che possono essere imputabili all'effetto di moltiplicazione di carica del gas di elettroni 2D all'interno del pozzo. Tutti questi vantaggi rispetto ai rivelatori esistenti basati sul diamante, rendono i nostri dispositivi potenzialmente molto attrattivi come alternativa a quelli commerciali.
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Lim, Sang-Hyun. "Characterization of p-type wide band gap transparent oxide for heterojunction devices." Amherst, Mass. : University of Massachusetts Amherst, 2009. http://scholarworks.umass.edu/dissertations/AAI3359903/.
Повний текст джерелаFan, Qian. "GaN heterojunction FET device Fabrication, Characterization and Modeling." VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/35.
Повний текст джерелаКниги з теми "Heterojunction semiconductor devices"
V, Morgan D., Williams Robin H, and Institution of Electrical Engineers, eds. Physics and technology of heterojunction devices. London, U.K: P. Peregrinus Ltd. on behalf of the Institution of Electrical Engineers, 1991.
Знайти повний текст джерелаZeghbroeck, Bart V. Van. Principles of Semiconductor Devices and Heterojunctions. Prentice Hall, 2008.
Знайти повний текст джерелаZhou, Ye. Optoelectronic Organic-Inorganic Semiconductor Heterojunctions. Taylor & Francis Group, 2021.
Знайти повний текст джерелаOptoelectronic Organic-Inorganic Semiconductor Heterojunctions. Taylor & Francis Group, 2021.
Знайти повний текст джерелаZhou, Ye. Optoelectronic Organic-Inorganic Semiconductor Heterojunctions. Taylor & Francis Group, 2021.
Знайти повний текст джерелаHeterojunction band discontinuities: Physics and device applications. Amsterdam: North-Holland, 1987.
Знайти повний текст джерелаPaul, Douglas J. Si/SiGe heterostructures in nanoelectronics. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.5.
Повний текст джерелаWang, Binan. Device characterization and analog circuit design for heterojunction FETs. 1993.
Знайти повний текст джерелаAdvanced Technologies for Next Generation Integrated Circuits. Institution of Engineering & Technology, 2020.
Знайти повний текст джерелаЧастини книг з теми "Heterojunction semiconductor devices"
Yngvesson, Sigfrid. "HFETs — Heterojunction Field Effect Transistors." In Microwave Semiconductor Devices, 363–415. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3970-4_11.
Повний текст джерелаPaletti, Paolo, and Alan Seabaugh. "Heterojunction Tunnel Field-Effect Transistors." In Springer Handbook of Semiconductor Devices, 867–903. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-79827-7_24.
Повний текст джерелаHazra, Purnima, and S. Jit. "Electrical Characteristics of Si/ZnO Core–Shell Nanowire Heterojunction Diode." In Physics of Semiconductor Devices, 673–75. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_173.
Повний текст джерелаSomvanshi, Divya, and S. Jit. "Electrical Characterization of n-ZnO Nanowires/p-Si Based Heterojunction Diodes." In Physics of Semiconductor Devices, 589–92. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_148.
Повний текст джерелаDas, S., S. Jana, D. De, U. Gangopadhyay, S. Garain, S. Ray, A. Mondal, and P. Ghosh. "A Novel Room Temperature Ammonia Gas Sensor Based on Diamond-Like Nanocomposite/c-Silicon Heterojunction." In Physics of Semiconductor Devices, 479–82. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_120.
Повний текст джерелаPigorsch, Carsten, Roland Stenzel, and Wilfried Klix. "Coupled 2D-microscopic/macroscopic simulation of nanoelectronic heterojunction devices." In Simulation of Semiconductor Devices and Processes, 230–33. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_55.
Повний текст джерелаChakraborty, Partha S., and John D. Cressler. "Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors." In Hot Carrier Degradation in Semiconductor Devices, 371–98. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08994-2_13.
Повний текст джерелаHalder, Nripendra N., Sanjay Kumar Jana, Pranab Biswas, D. Biswas, and P. Banerji. "Fabrication of n-ZnO/p-GaAs Heterojunction and Prediction of Its Luminescence Based on Photoluminescence Study." In Physics of Semiconductor Devices, 815–18. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_210.
Повний текст джерелаWei, C. J., H. C. Chung, Y. A. Tkachenko, and J. C. M. Hwang. "Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors." In Simulation of Semiconductor Devices and Processes, 298–301. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_72.
Повний текст джерелаHerzel, Frank, and Bernd Heinemann. "A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors." In Simulation of Semiconductor Devices and Processes, 98–101. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_23.
Повний текст джерелаТези доповідей конференцій з теми "Heterojunction semiconductor devices"
Rastogi, Shivam, Kurunthu Dharmalingam, Monica Katiyar, and Ashish Garg. "Understanding degradation mechanism of bulk heterojunction organic photovoltaic devices." In 16th International Workshop on Physics of Semiconductor Devices, edited by Monica Katiyar, B. Mazhari, and Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.927416.
Повний текст джерелаYakovlev, Yu P., K. D. Moiseev, M. P. Mikhailova, and O. G. Ershov. "Tunnel-Injection Laser Based on Type II Broken-Gap p-GaInAsSb/p-InAs Single Heterojunction." In Semiconductor Lasers: Advanced Devices and Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/slada.1995.mb.5.
Повний текст джерелаMukherjee, C., and C. K. Maiti. "Characterization of traps in SiGe:C channel heterojunction PMOSFETs." In 16th International Workshop on Physics of Semiconductor Devices, edited by Monica Katiyar, B. Mazhari, and Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.924516.
Повний текст джерелаPatel, Kamlesh, O. S. Panwar, Atul Bisht, Sreekumar C., Sushil Kumar, and C. M. S. Rauthan. "Simulation studies on heterojunction and HIT solar cells." In 16th International Workshop on Physics of Semiconductor Devices, edited by Monica Katiyar, B. Mazhari, and Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.927395.
Повний текст джерелаMawby, P. A., A. Perez-Tomas, M. R. Jennings, M. Davis, J. A. Covington, V. Shah, and T. Grasby. "Molecular beam epitaxy Si/4H-SiC heterojunction diodes." In 2007 International Workshop on Physics of Semiconductor Devices. IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472633.
Повний текст джерелаCapasso, Federico. "Band-gap engineering: from physics to optoelectronic functional devices." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.ws2.
Повний текст джерелаHuang, Robin K., Rajeev J. Ram, Michael J. Manfra, Michael K. Connors, Leo J. Missaggia, and George W. Turner. "Efficient infrared-to-electrical conversion with semiconductor heterojunction thermophotovoltaic devices." In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4628277.
Повний текст джерелаDujavova-Laurencikova, A., I. Novotny, J. Kovac, P. Elias, S. Hasenohrl, and J. Novak. "GaP/ZnO nanowires with a radial pn heterojunction." In 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2012. http://dx.doi.org/10.1109/asdam.2012.6418586.
Повний текст джерелаChung, C., and F. Jain. "Two-dimensional modal analysis of blue-green lasers using ZnSe based p-n and metal-insulator-semiconductor (MIS) heterostructures." In Compact Blue-Green Lasers. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.the4.
Повний текст джерелаNISHI, Kazuhisa, Hideaki OHYAMA, Toshiji SUZUKI, Tsuneo MITSUYU, and Takio TOMIMASU. "Measurement of Semiconductor Heterojunction Band Discontinuity by Free Electron Laser." In 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.c-3-5.
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