Статті в журналах з теми "HEMT AlN"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 статей у журналах для дослідження на тему "HEMT AlN".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.
Chiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, and Feng-Tso Chien. "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator." Membranes 11, no. 10 (September 23, 2021): 727. http://dx.doi.org/10.3390/membranes11100727.
Повний текст джерелаYamaoka, Yuya, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto, and Takashi Egawa. "Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates." MRS Advances 1, no. 50 (2016): 3415–20. http://dx.doi.org/10.1557/adv.2016.431.
Повний текст джерелаÇörekçi, S., D. Usanmaz, Z. Tekeli, M. Çakmak, S. Özçelik, and E. Özbay. "Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure." Journal of Nanoscience and Nanotechnology 8, no. 2 (February 1, 2008): 640–44. http://dx.doi.org/10.1166/jnn.2008.a181.
Повний текст джерелаShrestha, Niraj Man, Yuen Yee Wang, Yiming Li, and E. Y. Chang. "Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT." Himalayan Physics 4 (December 22, 2013): 14–17. http://dx.doi.org/10.3126/hj.v4i0.9419.
Повний текст джерелаTsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (February 1, 2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.
Повний текст джерелаHong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, and Chun-Hsiung Lin. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer." Micromachines 14, no. 3 (February 23, 2023): 519. http://dx.doi.org/10.3390/mi14030519.
Повний текст джерелаGusev, A. S., A. O. Sultanov, A. V. Katkov, S. M. Ryndya, N. V. Siglovaya, A. N. Klochkov, R. V. Ryzhuk, N. I. Kargin, and D. P. Borisenko. "Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier." Mikroèlektronika 53, no. 3 (October 27, 2024): 265–73. http://dx.doi.org/10.31857/s0544126924030086.
Повний текст джерелаRoensch, Sebastian, Victor Sizov, Takuma Yagi, Saad Murad, Lars Groh, Stephan Lutgen, Michael Krieger, and Heiko B. Weber. "Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon." Materials Science Forum 740-742 (January 2013): 502–5. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.502.
Повний текст джерелаМихайлович, С. В., Р. Р. Галиев, А. В. Зуев, А. Ю. Павлов, Д. С. Пономарев та Р. А. Хабибуллин. "Влияние длины затвора на скорость инжекции электронов в каналах полевых транзисторов на основе AlGaN/AlN/GaN". Письма в журнал технической физики 43, № 16 (2017): 9. http://dx.doi.org/10.21883/pjtf.2017.16.44927.16727.
Повний текст джерелаShen, L., S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars, and U. K. Mishra. "AlGaN/AlN/GaN high-power microwave HEMT." IEEE Electron Device Letters 22, no. 10 (October 2001): 457–59. http://dx.doi.org/10.1109/55.954910.
Повний текст джерелаEustis, Tyler J., John Silcox, Michael J. Murphy, and William J. Schaff. "Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 188–94. http://dx.doi.org/10.1557/s1092578300004269.
Повний текст джерелаReilly, Caroline E., Nirupam Hatui, Thomas E. Mates, Shuji Nakamura, Steven P. DenBaars, and Stacia Keller. "2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature." Applied Physics Letters 118, no. 22 (May 31, 2021): 222103. http://dx.doi.org/10.1063/5.0050584.
Повний текст джерелаPopok, V. N., T. S. Aunsborg, R. H. Godiksen, P. K. Kristensen, R. R. Juluri, P. Caban, and K. Pedersen. "Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation." REVIEWS ON ADVANCED MATERIALS SCIENCE 57, no. 1 (June 1, 2018): 72–81. http://dx.doi.org/10.1515/rams-2018-0049.
Повний текст джерелаWang, X. H., X. L. Wang, C. Feng, C. B. Yang, B. Z. Wang, J. X. Ran, H. L. Xiao, C. M. Wang, and J. X. Wang. "Hydrogen sensors based on AlGaN/AlN/GaN HEMT." Microelectronics Journal 39, no. 1 (January 2008): 20–23. http://dx.doi.org/10.1016/j.mejo.2007.10.022.
Повний текст джерелаSinghal, Jashan, Reet Chaudhuri, Austin Hickman, Vladimir Protasenko, Huili Grace Xing, and Debdeep Jena. "Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures." APL Materials 10, no. 11 (November 1, 2022): 111120. http://dx.doi.org/10.1063/5.0121195.
Повний текст джерелаGowthami, Y., B.Balaji, and K. Srinivasa Rao. "Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics." Journal of Integrated Circuits and Systems 18, no. 1 (May 22, 2023): 1–8. http://dx.doi.org/10.29292/jics.v18i1.657.
Повний текст джерелаChoi, Uiho, Kyeongjae Lee, Taemyung Kwak, Donghyeop Jung, Taehoon Jang, Yongjun Nam, Byeongchan So, et al. "Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT." Japanese Journal of Applied Physics 58, no. 12 (November 6, 2019): 121003. http://dx.doi.org/10.7567/1347-4065/ab4df3.
Повний текст джерелаWu, Jui Sheng, and Edward Yi Chang. "Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric." Materials Science Forum 1055 (March 4, 2022): 7–12. http://dx.doi.org/10.4028/p-180hme.
Повний текст джерелаLu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, and Yue Hao. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade." Applied Physics Letters 120, no. 17 (April 25, 2022): 173502. http://dx.doi.org/10.1063/5.0088585.
Повний текст джерелаLu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, and Yue Hao. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade." Applied Physics Letters 120, no. 17 (April 25, 2022): 173502. http://dx.doi.org/10.1063/5.0088585.
Повний текст джерелаSun, Mengyuan, Luyu Wang, Penghao Zhang, and Kun Chen. "Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing." Micromachines 14, no. 6 (May 23, 2023): 1100. http://dx.doi.org/10.3390/mi14061100.
Повний текст джерелаVohra, Anurag, Karen Geens, Ming Zhao, Olga Syshchyk, Herwig Hahn, Dirk Fahle, Benoit Bakeroot, et al. "Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application." Applied Physics Letters 120, no. 26 (June 27, 2022): 261902. http://dx.doi.org/10.1063/5.0097797.
Повний текст джерелаKim, Jeong-Gil, Chul-Ho Won, Do-Kywn Kim, Young-Woo Jo, Jun-Hyeok Lee, Yong-Tae Kim, Sorin Cristoloveanu, and Jung-Hee Lee. "Growth of AlN/GaN HEMT structure Using Indium-surfactant." JSTS:Journal of Semiconductor Technology and Science 15, no. 5 (October 30, 2015): 490–96. http://dx.doi.org/10.5573/jsts.2015.15.5.490.
Повний текст джерелаDurukan, İ. Kars, Ö. Akpınar, C. Avar, A. Gultekin, M. K. Öztürk, S. Özçelik, and E. Özbay. "Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications." Journal of Nanoelectronics and Optoelectronics 13, no. 3 (March 1, 2018): 331–34. http://dx.doi.org/10.1166/jno.2018.2239.
Повний текст джерелаHao, Lu, Zhihong Liu, Hanghai Du, Shenglei Zhao, Han Wang, Jincheng Zhang, and Yue Hao. "Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure." Micromachines 15, no. 12 (December 21, 2024): 1525. https://doi.org/10.3390/mi15121525.
Повний текст джерелаGuo, Lunchun, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, and Guoxin Hu. "The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure." Microelectronics Journal 39, no. 5 (May 2008): 777–81. http://dx.doi.org/10.1016/j.mejo.2007.12.005.
Повний текст джерелаGusev, A. S., A. O. Sultanov, A. V. Katkov, S. M. Ryndya, N. V. Siglovaya, A. N. Klochkov, R. V. Ryzhuk, N. I. Kargin, and D. P. Borisenko. "Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier." Russian Microelectronics 53, no. 3 (June 2024): 252–59. http://dx.doi.org/10.1134/s1063739724600304.
Повний текст джерелаElwaradi, Reda, Jash Mehta, Thi Huong Ngo, Maud Nemoz, Catherine Bougerol, Farid Medjdoub, and Yvon Cordier. "Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate." Journal of Applied Physics 133, no. 14 (April 14, 2023): 145705. http://dx.doi.org/10.1063/5.0147048.
Повний текст джерелаChen Xiang, 陈翔, 邢艳辉 Xing Yanhui, 韩军 Han Jun, 李影智 Li Yingzhi, 邓旭光 Deng Xuguang, 范亚明 Fan Yaming, 张晓东 Zhang Xiaodong, and 张宝顺 Zhang Baoshun. "Influence of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials Grown by MOCVD." Chinese Journal of Lasers 40, no. 6 (2013): 0606005. http://dx.doi.org/10.3788/cjl201340.0606005.
Повний текст джерелаZHONG Lin-jian, 钟林健, 邢艳辉 XING Yan-hui, 韩军 HAN Jun, 陈翔 CHEN Xiang, 朱启发 ZHU Qi-fa, 范亚明 FAN Ya-ming, 邓旭光 DENG Xu-guang, and 张宝顺 ZHANG Bao-shun. "Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials." Chinese Journal of Luminescence 35, no. 7 (2014): 830–34. http://dx.doi.org/10.3788/fgxb20143507.0830.
Повний текст джерелаGuo, Jingwei, Shengdong Hu, Ping Li, Jie Jiang, Ruoyu Wang, Yuan Wang, and Hao Wu. "A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances." Micromachines 13, no. 3 (March 18, 2022): 464. http://dx.doi.org/10.3390/mi13030464.
Повний текст джерелаTaking, S., D. MacFarlane, and E. Wasige. "AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results." Active and Passive Electronic Components 2011 (2011): 1–7. http://dx.doi.org/10.1155/2011/821305.
Повний текст джерелаMukhopadhyay, Swarnav, Cheng Liu, Jiahao Chen, Md Tahmidul Alam, Surjava Sanyal, Ruixin Bai, Guangying Wang, Chirag Gupta та Shubhra S. Pasayat. "Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)". Crystals 13, № 10 (30 вересня 2023): 1456. http://dx.doi.org/10.3390/cryst13101456.
Повний текст джерелаWang, Cuimei, Xiaoliang Wang, Guoxin Hu, Junxi Wang, Hongling Xiao, and Jianping Li. "The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures." Journal of Crystal Growth 289, no. 2 (April 2006): 415–18. http://dx.doi.org/10.1016/j.jcrysgro.2005.11.118.
Повний текст джерелаShur, Michael, Grigory Simin, Kamal Hussain, Abdullah Mamun, M. V. S. Chandrashekhar, and Asif Khan. "Quantum Channel Extreme Bandgap AlGaN HEMT." Micromachines 15, no. 11 (November 15, 2024): 1384. http://dx.doi.org/10.3390/mi15111384.
Повний текст джерелаAKPINAR, Ömer, Ahmet BİLGİLİ, Mustafa ÖZTÜRK, and Süleyman ÖZÇELİK. "Optical Properties of AlInN/AlN HEMTs in Detail." Karadeniz Fen Bilimleri Dergisi 12, no. 2 (December 15, 2022): 521–29. http://dx.doi.org/10.31466/kfbd.954421.
Повний текст джерелаZhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.
Повний текст джерелаМихайлович, С. В., А. Ю. Павлов, К. Н. Томош та Ю. В. Федоров. "Низкоэнергетическое бездефектное сухое травление барьерного слоя HEMT AlGaN/AlN/GaN". Письма в журнал технической физики 44, № 10 (2018): 61. http://dx.doi.org/10.21883/pjtf.2018.10.46100.17227.
Повний текст джерелаKoehler, Andrew D., Neeraj Nepal, Travis J. Anderson, Marko J. Tadjer, Karl D. Hobart, Charles R. Eddy, and Francis J. Kub. "Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation." IEEE Electron Device Letters 34, no. 9 (September 2013): 1115–17. http://dx.doi.org/10.1109/led.2013.2274429.
Повний текст джерелаFlorovič, M., R. Szobolovszký, J. Kováč, J. Kováč, A. Chvála, J.-C. Jacquet, and S. L. Delage. "Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT." Semiconductor Science and Technology 34, no. 6 (May 21, 2019): 065021. http://dx.doi.org/10.1088/1361-6641/ab1737.
Повний текст джерелаWang, Jie, Lingling Sun, Jun Liu, and Mingzhu Zhou. "A surface-potential-based model for AlGaN/AlN/GaN HEMT." Journal of Semiconductors 34, no. 9 (September 2013): 094002. http://dx.doi.org/10.1088/1674-4926/34/9/094002.
Повний текст джерелаLuo, Xin, Peng Cui, Tieying Zhang, Xinkun Yan, Siheng Chen, Liu Wang, Jiacheng Dai, et al. "High performance of AlGaN/GaN HEMT with AlN cap layer." Micro and Nanostructures 198 (February 2025): 208054. https://doi.org/10.1016/j.micrna.2024.208054.
Повний текст джерелаSidi Mohammed Hadj, Irid, Mohammed Khaouani, Imane Four, Zakarya KOURDI, and Omar Azzoug. "SPSPT Switch Based AlN/GaN/AlGaN HEMT on Ku to Ku to V-Band for Satellite Application." Journal of Integrated Circuits and Systems 19, no. 3 (December 23, 2024): 1–4. https://doi.org/10.29292/jics.v19i3.885.
Повний текст джерелаMitterhuber, Lisa, René Hammer, Thomas Dengg, and Jürgen Spitaler. "Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications." Energies 13, no. 9 (May 9, 2020): 2363. http://dx.doi.org/10.3390/en13092363.
Повний текст джерелаHuang, Chong-Rong, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, and Kuo-Jen Chang. "Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates." Membranes 11, no. 11 (October 30, 2021): 848. http://dx.doi.org/10.3390/membranes11110848.
Повний текст джерелаKhachariya, Dolar, Seiji Mita, Pramod Reddy, Saroj Dangi, J. Houston Dycus, Pegah Bagheri, M. Hayden Breckenridge, et al. "Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates." Applied Physics Letters 120, no. 17 (April 25, 2022): 172106. http://dx.doi.org/10.1063/5.0083966.
Повний текст джерелаKhachariya, Dolar, Seiji Mita, Pramod Reddy, Saroj Dangi, J. Houston Dycus, Pegah Bagheri, M. Hayden Breckenridge, et al. "Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates." Applied Physics Letters 120, no. 17 (April 25, 2022): 172106. http://dx.doi.org/10.1063/5.0083966.
Повний текст джерелаKhediri, Abdelkrim, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, and Ali Soltani. "Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT." Micromachines 12, no. 11 (October 21, 2021): 1284. http://dx.doi.org/10.3390/mi12111284.
Повний текст джерелаMurugapandiyan, P., A. Mohanbabu, V. Rajya Lakshmi, V. N. Ramakrishnan, Arathy Varghese, MOHD Wasim, S. Baskaran, R. Saravana Kumar, and V. Janakiraman. "Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications." Journal of Science: Advanced Materials and Devices 5, no. 2 (June 2020): 192–98. http://dx.doi.org/10.1016/j.jsamd.2020.04.007.
Повний текст джерелаDing, Rui, Weipeng Xuan, Shurong Dong, Biao Zhang, Feng Gao, Gang Liu, Zichao Zhang, Hao Jin, and Jikui Luo. "The 3.4 GHz BAW RF Filter Based on Single Crystal AlN Resonator for 5G Application." Nanomaterials 12, no. 17 (September 5, 2022): 3082. http://dx.doi.org/10.3390/nano12173082.
Повний текст джерела