Статті в журналах з теми "HEMT AlN/GaN"
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Chiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, and Feng-Tso Chien. "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator." Membranes 11, no. 10 (September 23, 2021): 727. http://dx.doi.org/10.3390/membranes11100727.
Повний текст джерелаTsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (February 1, 2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.
Повний текст джерелаShrestha, Niraj Man, Yuen Yee Wang, Yiming Li, and E. Y. Chang. "Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT." Himalayan Physics 4 (December 22, 2013): 14–17. http://dx.doi.org/10.3126/hj.v4i0.9419.
Повний текст джерелаYamaoka, Yuya, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto, and Takashi Egawa. "Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates." MRS Advances 1, no. 50 (2016): 3415–20. http://dx.doi.org/10.1557/adv.2016.431.
Повний текст джерелаÇörekçi, S., D. Usanmaz, Z. Tekeli, M. Çakmak, S. Özçelik, and E. Özbay. "Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure." Journal of Nanoscience and Nanotechnology 8, no. 2 (February 1, 2008): 640–44. http://dx.doi.org/10.1166/jnn.2008.a181.
Повний текст джерелаHong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, and Chun-Hsiung Lin. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer." Micromachines 14, no. 3 (February 23, 2023): 519. http://dx.doi.org/10.3390/mi14030519.
Повний текст джерелаGusev, A. S., A. O. Sultanov, A. V. Katkov, S. M. Ryndya, N. V. Siglovaya, A. N. Klochkov, R. V. Ryzhuk, N. I. Kargin, and D. P. Borisenko. "Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier." Mikroèlektronika 53, no. 3 (October 27, 2024): 265–73. http://dx.doi.org/10.31857/s0544126924030086.
Повний текст джерелаShen, L., S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars, and U. K. Mishra. "AlGaN/AlN/GaN high-power microwave HEMT." IEEE Electron Device Letters 22, no. 10 (October 2001): 457–59. http://dx.doi.org/10.1109/55.954910.
Повний текст джерелаWang, X. H., X. L. Wang, C. Feng, C. B. Yang, B. Z. Wang, J. X. Ran, H. L. Xiao, C. M. Wang, and J. X. Wang. "Hydrogen sensors based on AlGaN/AlN/GaN HEMT." Microelectronics Journal 39, no. 1 (January 2008): 20–23. http://dx.doi.org/10.1016/j.mejo.2007.10.022.
Повний текст джерелаPopok, V. N., T. S. Aunsborg, R. H. Godiksen, P. K. Kristensen, R. R. Juluri, P. Caban, and K. Pedersen. "Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation." REVIEWS ON ADVANCED MATERIALS SCIENCE 57, no. 1 (June 1, 2018): 72–81. http://dx.doi.org/10.1515/rams-2018-0049.
Повний текст джерелаМихайлович, С. В., Р. Р. Галиев, А. В. Зуев, А. Ю. Павлов, Д. С. Пономарев та Р. А. Хабибуллин. "Влияние длины затвора на скорость инжекции электронов в каналах полевых транзисторов на основе AlGaN/AlN/GaN". Письма в журнал технической физики 43, № 16 (2017): 9. http://dx.doi.org/10.21883/pjtf.2017.16.44927.16727.
Повний текст джерелаElwaradi, Reda, Jash Mehta, Thi Huong Ngo, Maud Nemoz, Catherine Bougerol, Farid Medjdoub, and Yvon Cordier. "Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate." Journal of Applied Physics 133, no. 14 (April 14, 2023): 145705. http://dx.doi.org/10.1063/5.0147048.
Повний текст джерелаRoensch, Sebastian, Victor Sizov, Takuma Yagi, Saad Murad, Lars Groh, Stephan Lutgen, Michael Krieger, and Heiko B. Weber. "Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon." Materials Science Forum 740-742 (January 2013): 502–5. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.502.
Повний текст джерелаHao, Lu, Zhihong Liu, Hanghai Du, Shenglei Zhao, Han Wang, Jincheng Zhang, and Yue Hao. "Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure." Micromachines 15, no. 12 (December 21, 2024): 1525. https://doi.org/10.3390/mi15121525.
Повний текст джерелаWu, Jui Sheng, and Edward Yi Chang. "Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric." Materials Science Forum 1055 (March 4, 2022): 7–12. http://dx.doi.org/10.4028/p-180hme.
Повний текст джерелаKim, Jeong-Gil, Chul-Ho Won, Do-Kywn Kim, Young-Woo Jo, Jun-Hyeok Lee, Yong-Tae Kim, Sorin Cristoloveanu, and Jung-Hee Lee. "Growth of AlN/GaN HEMT structure Using Indium-surfactant." JSTS:Journal of Semiconductor Technology and Science 15, no. 5 (October 30, 2015): 490–96. http://dx.doi.org/10.5573/jsts.2015.15.5.490.
Повний текст джерелаDurukan, İ. Kars, Ö. Akpınar, C. Avar, A. Gultekin, M. K. Öztürk, S. Özçelik, and E. Özbay. "Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications." Journal of Nanoelectronics and Optoelectronics 13, no. 3 (March 1, 2018): 331–34. http://dx.doi.org/10.1166/jno.2018.2239.
Повний текст джерелаGowthami, Y., B.Balaji, and K. Srinivasa Rao. "Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics." Journal of Integrated Circuits and Systems 18, no. 1 (May 22, 2023): 1–8. http://dx.doi.org/10.29292/jics.v18i1.657.
Повний текст джерелаZhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.
Повний текст джерелаReilly, Caroline E., Nirupam Hatui, Thomas E. Mates, Shuji Nakamura, Steven P. DenBaars, and Stacia Keller. "2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature." Applied Physics Letters 118, no. 22 (May 31, 2021): 222103. http://dx.doi.org/10.1063/5.0050584.
Повний текст джерелаHuang, Chong-Rong, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, and Kuo-Jen Chang. "Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates." Membranes 11, no. 11 (October 30, 2021): 848. http://dx.doi.org/10.3390/membranes11110848.
Повний текст джерелаVohra, Anurag, Karen Geens, Ming Zhao, Olga Syshchyk, Herwig Hahn, Dirk Fahle, Benoit Bakeroot, et al. "Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application." Applied Physics Letters 120, no. 26 (June 27, 2022): 261902. http://dx.doi.org/10.1063/5.0097797.
Повний текст джерелаSun, Mengyuan, Luyu Wang, Penghao Zhang, and Kun Chen. "Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing." Micromachines 14, no. 6 (May 23, 2023): 1100. http://dx.doi.org/10.3390/mi14061100.
Повний текст джерелаTaking, S., D. MacFarlane, and E. Wasige. "AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results." Active and Passive Electronic Components 2011 (2011): 1–7. http://dx.doi.org/10.1155/2011/821305.
Повний текст джерелаLu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, and Yue Hao. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade." Applied Physics Letters 120, no. 17 (April 25, 2022): 173502. http://dx.doi.org/10.1063/5.0088585.
Повний текст джерелаLu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, and Yue Hao. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade." Applied Physics Letters 120, no. 17 (April 25, 2022): 173502. http://dx.doi.org/10.1063/5.0088585.
Повний текст джерелаChoi, Uiho, Kyeongjae Lee, Taemyung Kwak, Donghyeop Jung, Taehoon Jang, Yongjun Nam, Byeongchan So, et al. "Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT." Japanese Journal of Applied Physics 58, no. 12 (November 6, 2019): 121003. http://dx.doi.org/10.7567/1347-4065/ab4df3.
Повний текст джерелаEustis, Tyler J., John Silcox, Michael J. Murphy, and William J. Schaff. "Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 188–94. http://dx.doi.org/10.1557/s1092578300004269.
Повний текст джерелаМихайлович, С. В., А. Ю. Павлов, К. Н. Томош та Ю. В. Федоров. "Низкоэнергетическое бездефектное сухое травление барьерного слоя HEMT AlGaN/AlN/GaN". Письма в журнал технической физики 44, № 10 (2018): 61. http://dx.doi.org/10.21883/pjtf.2018.10.46100.17227.
Повний текст джерелаKoehler, Andrew D., Neeraj Nepal, Travis J. Anderson, Marko J. Tadjer, Karl D. Hobart, Charles R. Eddy, and Francis J. Kub. "Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation." IEEE Electron Device Letters 34, no. 9 (September 2013): 1115–17. http://dx.doi.org/10.1109/led.2013.2274429.
Повний текст джерелаFlorovič, M., R. Szobolovszký, J. Kováč, J. Kováč, A. Chvála, J.-C. Jacquet, and S. L. Delage. "Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT." Semiconductor Science and Technology 34, no. 6 (May 21, 2019): 065021. http://dx.doi.org/10.1088/1361-6641/ab1737.
Повний текст джерелаWang, Jie, Lingling Sun, Jun Liu, and Mingzhu Zhou. "A surface-potential-based model for AlGaN/AlN/GaN HEMT." Journal of Semiconductors 34, no. 9 (September 2013): 094002. http://dx.doi.org/10.1088/1674-4926/34/9/094002.
Повний текст джерелаLuo, Xin, Peng Cui, Tieying Zhang, Xinkun Yan, Siheng Chen, Liu Wang, Jiacheng Dai, et al. "High performance of AlGaN/GaN HEMT with AlN cap layer." Micro and Nanostructures 198 (February 2025): 208054. https://doi.org/10.1016/j.micrna.2024.208054.
Повний текст джерелаMitterhuber, Lisa, René Hammer, Thomas Dengg, and Jürgen Spitaler. "Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications." Energies 13, no. 9 (May 9, 2020): 2363. http://dx.doi.org/10.3390/en13092363.
Повний текст джерелаJurkovic, M., D. Gregusova, V. Palankovski, Stefan Hascik, M. Blaho, K. Cico, K. Frohlich, J. Carlin, N. Grandjean, and J. Kuzmik. "Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region." IEEE Electron Device Letters 34, no. 3 (March 2013): 432–34. http://dx.doi.org/10.1109/led.2013.2241388.
Повний текст джерелаAdak, Sarosij, Arghyadeep Sarkar, Sanjit Swain, Hemant Pardeshi, Sudhansu Kumar Pati, and Chandan Kumar Sarkar. "High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT." Superlattices and Microstructures 75 (November 2014): 347–57. http://dx.doi.org/10.1016/j.spmi.2014.07.036.
Повний текст джерелаDai, Jin-Ji, Thi Thu Mai, Ssu-Kuan Wu, Jing-Rong Peng, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Han-Chieh Ho, and Wei-Fan Wang. "High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT." Nanomaterials 11, no. 7 (July 7, 2021): 1766. http://dx.doi.org/10.3390/nano11071766.
Повний текст джерелаGuo, Lunchun, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, and Guoxin Hu. "The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure." Microelectronics Journal 39, no. 5 (May 2008): 777–81. http://dx.doi.org/10.1016/j.mejo.2007.12.005.
Повний текст джерелаGusev, A. S., A. O. Sultanov, A. V. Katkov, S. M. Ryndya, N. V. Siglovaya, A. N. Klochkov, R. V. Ryzhuk, N. I. Kargin, and D. P. Borisenko. "Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier." Russian Microelectronics 53, no. 3 (June 2024): 252–59. http://dx.doi.org/10.1134/s1063739724600304.
Повний текст джерелаKhediri, Abdelkrim, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, and Ali Soltani. "Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT." Micromachines 12, no. 11 (October 21, 2021): 1284. http://dx.doi.org/10.3390/mi12111284.
Повний текст джерелаHamady, Saleem, Bilal Beydoun, and Frédéric Morancho. "TCAD-Based Analysis on the Impact of AlN Interlayer in Normally-off AlGaN/GaN MISHEMTs with Buried p-Region." Electronics 14, no. 2 (January 14, 2025): 313. https://doi.org/10.3390/electronics14020313.
Повний текст джерелаPiner, E. L., D. M. Keogh, J. S. Flynn, and J. M. Redwing. "AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 349–54. http://dx.doi.org/10.1557/s109257830000449x.
Повний текст джерелаSidi Mohammed Hadj, Irid, Mohammed Khaouani, Imane Four, Zakarya KOURDI, and Omar Azzoug. "SPSPT Switch Based AlN/GaN/AlGaN HEMT on Ku to Ku to V-Band for Satellite Application." Journal of Integrated Circuits and Systems 19, no. 3 (December 23, 2024): 1–4. https://doi.org/10.29292/jics.v19i3.885.
Повний текст джерелаVarghese, Arathy, Ashish Kumar, Arun Kishor Johar, Girraj Sharma, Sandeep Vyas, and Mahendra singh Yadav. "AlGaN/AlN/GaN SG-HEMT as pH detector: A simulation study." Materials Today: Proceedings 46 (2021): 5927–30. http://dx.doi.org/10.1016/j.matpr.2021.03.740.
Повний текст джерелаLi, Jialin, Yian Yin, Ni Zeng, Fengbo Liao, Mengxiao Lian, Xichen Zhang, Keming Zhang, and Jingbo Li. "Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate." Superlattices and Microstructures 161 (January 2022): 107064. http://dx.doi.org/10.1016/j.spmi.2021.107064.
Повний текст джерелаLutsenko, E. V., M. V. Rzheutski, A. G. Vainilovich, I. E. Svitsiankou, V. A. Shulenkova, E. V. Muravitskaya, A. N. Alexeev, S. I. Petrov, and G. P. Yablonskii. "MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3." Semiconductors 52, no. 16 (December 2018): 2107–10. http://dx.doi.org/10.1134/s1063782618160170.
Повний текст джерелаNidhi, Sansaptak Dasgupta, Yi Pei, Brian L. Swenson, Stacia Keller, James S. Speck, and Umesh K. Mishra. "N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications." IEEE Electron Device Letters 31, no. 12 (December 2010): 1437–39. http://dx.doi.org/10.1109/led.2010.2078791.
Повний текст джерелаChen, P. G., M. Tang, M. H. Liao, and M. H. Lee. "In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact." Solid-State Electronics 129 (March 2017): 206–9. http://dx.doi.org/10.1016/j.sse.2016.11.002.
Повний текст джерелаWang, Yan-Ping, Yin-Hong Luo, Wei Wang, Ke-Ying Zhang, Hong-Xia Guo, Xiao-Qiang Guo, and Yuan-Ming Wang. "60 Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices." Chinese Physics C 37, no. 5 (May 2013): 056201. http://dx.doi.org/10.1088/1674-1137/37/5/056201.
Повний текст джерелаGassoumi, M., A. Helali, M. Gassoumi, Z. Elleuch, N. Boughdiri, H. Guesmi, S. Rejab, and H. Maaref. "Electron confinement enhancement in AlGaN/AlN/GaN HEMT using BGaN buffer." Journal of Ovonic Research 19, no. 1 (February 20, 2023): 81–86. http://dx.doi.org/10.15251/jor.2023.191.81.
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