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Готові списки джерел за темами / HEMT AlN/GaN / Статті в журналах

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Статті в журналах з теми "HEMT AlN/GaN"

Автор: Grafiati

Опубліковано: 1 березня 2025

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1

Chiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, and Feng-Tso Chien. "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator." Membranes 11, no. 10 (September 23, 2021): 727. http://dx.doi.org/10.3390/membranes11100727.

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Анотація:

A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEMT did. Additionally, a high turn-on voltage was obtained. The MIS-HEMT was shown to be reliable with a long lifetime. Hence, growing a high-quality Al2O3/AlN layer in an HEMT can help realize a high-performance enhancement-mode transistor with high stability, a large gate swing region, and high reliability.

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2

Tsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (February 1, 2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.

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In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.

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3

Shrestha, Niraj Man, Yuen Yee Wang, Yiming Li, and E. Y. Chang. "Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT." Himalayan Physics 4 (December 22, 2013): 14–17. http://dx.doi.org/10.3126/hj.v4i0.9419.

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High electron mobility transistor (HEMT)Two-dimensional electron gas (2DEG) formed at AlGaN/GaN interface is a critical part to tune the characteristic of AlGaN/GaN HEMT devices. Introduction of AlN spacer layer in between AlGaN and GaN layer is one of the way to improve 2DEG density, mobility, and drain current. Carrier concentration, mobility and conduction band offset for different spacer layer thickness was simulated by using Silvaco simulation tool. Our device simulations showed that carrier concentration, mobility are enhance on introduction of AlN spacer layer in HEMT. In addition, carrier properties of HEMT also depend on thickness of spacer layer. Our simulation showed that the mobility of 2DEG attains its maximum value at the 0.5 nm thick AlN layer but carrier concentration increases with spacer thickness. Finally, drain current increases with increasing spacer layer thickness and reach maximum value at 1.2nm thick spacer layer.The Himalayan Physics Vol. 4, No. 4, 2013 Page: 14-17 Uploaded date: 12/22/2013

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4

Yamaoka, Yuya, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto, and Takashi Egawa. "Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates." MRS Advances 1, no. 50 (2016): 3415–20. http://dx.doi.org/10.1557/adv.2016.431.

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ABSTRACT In this study, the initial AlN layer and the vertical-direction breakdown voltage (VDBV) of AlGaN/GaN high-electron-mobility transistors (HEMTs) were characterized. Prior to the formation of the interface between the AlN layer and the Si substrate, only trimethylaluminum (TMA) was introduced without ammonia to control the crystal quality of initial AlN layer (TMA preflow). HEMT structures were simultaneously grown on identical AlN layers on Si substrates (AlN/Si templates) grown using different TMA preflow temperatures. The density of screw- or mixed-type dislocations in the initial AlN layer decreased as the TMA preflow temperature increased. Further, the VDBV of the HEMT structure increased as the TMA preflow temperature increased. It is supposed that the screw- or mixed-type dislocations are the possible source of the vertical leakage current in the HEMT structures. The improvement in the crystal quality of the initial AlN layer affects the increase in the VDBV of the AlGaN/GaN HEMTs on Si substrates.

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5

Çörekçi, S., D. Usanmaz, Z. Tekeli, M. Çakmak, S. Özçelik, and E. Özbay. "Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure." Journal of Nanoscience and Nanotechnology 8, no. 2 (February 1, 2008): 640–44. http://dx.doi.org/10.1166/jnn.2008.a181.

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We present surface properties of buffer films (AlN and GaN) and Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AlN interlayer grown on High Temperature (HT)-AlN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 108–109 cm−2. The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100–250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AlN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.

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6

Hong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, and Chun-Hsiung Lin. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer." Micromachines 14, no. 3 (February 23, 2023): 519. http://dx.doi.org/10.3390/mi14030519.

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In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment between the HEMT cells and the thermal conduction bumps. Steady-state thermal simulations were conducted to study the channel temperatures of GaN HEMTs with various Au bump patterns at different levels of current and voltage loadings, and the results were compared with the conventional face-up GaN die bonding on an AlN package substrate. The simulations were started from a single finger isolated HEMT cell and then extended to multiple fingers HEMT cells (total gate width > 40 mm) to investigate the “thermal cross-talk” effect from neighboring devices. Thermal analysis of the GaN HEMT under pulse operation was also performed to better reflect the actual conditions in power conversion or pulsed laser driver applications. Our analysis provides a combinational assessment of power GaN HEMT dies under a working condition (e.g., 1MHz, 25% duty cycle) with different flip chip packaging schemes. The analysis indicated that the channel temperature rise (∆T) of a HEMT cell in operation can be reduced by 44~46% by changing from face-up die bonding to a flip-chip bonding scheme with an optimized bump pattern design.

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7

Gusev, A. S., A. O. Sultanov, A. V. Katkov, S. M. Ryndya, N. V. Siglovaya, A. N. Klochkov, R. V. Ryzhuk, N. I. Kargin, and D. P. Borisenko. "Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier." Mikroèlektronika 53, no. 3 (October 27, 2024): 265–73. http://dx.doi.org/10.31857/s0544126924030086.

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Experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier were obtained using molecular beam epitaxy with plasma activation of nitrogen. The layer resistance of the optimized structures was less than 230 Ω/¨. The scattering processes that limit the mobility of two-dimensional electron gas in undoped AlN/GaN HSs with an ultrathin AlN barrier have been studied. It is shown that in the ns range characteristic of AlN/GaN HEMT HSs (ns 1 × 1013 cm–2), a noticeable contribution to the scattering of charge carriers is made by the roughness of the heterointerface.

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8

Shen, L., S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars, and U. K. Mishra. "AlGaN/AlN/GaN high-power microwave HEMT." IEEE Electron Device Letters 22, no. 10 (October 2001): 457–59. http://dx.doi.org/10.1109/55.954910.

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9

Wang, X. H., X. L. Wang, C. Feng, C. B. Yang, B. Z. Wang, J. X. Ran, H. L. Xiao, C. M. Wang, and J. X. Wang. "Hydrogen sensors based on AlGaN/AlN/GaN HEMT." Microelectronics Journal 39, no. 1 (January 2008): 20–23. http://dx.doi.org/10.1016/j.mejo.2007.10.022.

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10

Popok, V. N., T. S. Aunsborg, R. H. Godiksen, P. K. Kristensen, R. R. Juluri, P. Caban, and K. Pedersen. "Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation." REVIEWS ON ADVANCED MATERIALS SCIENCE 57, no. 1 (June 1, 2018): 72–81. http://dx.doi.org/10.1515/rams-2018-0049.

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Abstract Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported. The study demonstrates very good correlation between different methods providing a platform for reliable estimation of crystalline quality of the AlGaN/GaN structures and related to that electrical performance which is found to be significantly affected by threading dislocations (TD): higher TD density reduces the electron mobility while the charge carrier concentration is found to be largely unchanged. The attempt to vary the ammonia flow during the AlN synthesis is found not to affect the film composition and dislocation densities in the following heterostructures. An unusual phenomenon of considerable diffusion of Ga from the GaN film into the AlN buffer is found in all samples under the study. The obtained results are an important step in optimization of AlGaN/GaN growth towards the formation of good quality HEMT structures on sapphire and transfer of technology to Si substrates by providing clear understanding of the role of synthesis parameter on structure and composition of the films.

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11

Михайлович, С. В., Р. Р. Галиев, А. В. Зуев, А. Ю. Павлов, Д. С. Пономарев та Р. А. Хабибуллин. "Влияние длины затвора на скорость инжекции электронов в каналах полевых транзисторов на основе AlGaN/AlN/GaN". Письма в журнал технической физики 43, № 16 (2017): 9. http://dx.doi.org/10.21883/pjtf.2017.16.44927.16727.

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Исследованы полевые транзисторы с высокой подвижностью электронов (HEMT) на основе AlGaN/AlN/GaN с разной длиной затвора Lg. Значения максимальных частот усиления по току fT и однонаправленного коэффициента усиления fmax составили 88 и 155 GHz для транзисторов с Lg =125 nm и 26 и 82 GHz для транзисторов с Lg = 360 nm соответственно. На основе измеренных S-параметров проведена экстракция значений элементов малосигнальных эквивалентных схем AlGaN/AlN/GaN HEMT и определена зависимость скорости инжекции vinj от напряжения затвор-исток. Также исследовано влияние длины затвора и напряжения между стоком и истоком на величину vinj. DOI: 10.21883/PJTF.2017.16.44927.16727

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12

Elwaradi, Reda, Jash Mehta, Thi Huong Ngo, Maud Nemoz, Catherine Bougerol, Farid Medjdoub, and Yvon Cordier. "Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate." Journal of Applied Physics 133, no. 14 (April 14, 2023): 145705. http://dx.doi.org/10.1063/5.0147048.

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In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and electrical properties of the heterostructures have been studied. The material analysis involved high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. In a first series of HEMT structures grown with an aluminum content of 30% in the AlGaN barrier, the channel downscaling results in a reduction in the GaN strain relaxation rate but at the expense of degradation in the mean crystal quality and in the electron mobility with a noticeable increase in the sheet resistance. An opposite trend is noticed for the three-terminal breakdown voltage of transistors, so that a trade-off is obtained for a 50 nm width GaN channel HEMT, which exhibits a sheet resistance of 1700 Ω/sq. with transistors demonstrating three-terminal breakdown voltage up to 1400 V for 40 μm gate to drain spacing with static on resistance Ron = 32 mΩ cm2. On the other hand, a second series of HEMT structures with high aluminum content AlGaN barriers and sub-10 nm GaN channels have been grown perfectly strained with high sheet carrier densities allowing to preserve sheet resistances in the range of 880–1050 Ω/sq.

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13

Roensch, Sebastian, Victor Sizov, Takuma Yagi, Saad Murad, Lars Groh, Stephan Lutgen, Michael Krieger, and Heiko B. Weber. "Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon." Materials Science Forum 740-742 (January 2013): 502–5. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.502.

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The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures below 150 K. This effect is linked to a reduction of alloy scattering. Optical and scanning electron microscopy revealed hexagonal shaped defects which also have an effect on the mobility. These defects can be avoided by an appropriate adjustment of the AlN layer thickness.

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14

Hao, Lu, Zhihong Liu, Hanghai Du, Shenglei Zhao, Han Wang, Jincheng Zhang, and Yue Hao. "Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure." Micromachines 15, no. 12 (December 21, 2024): 1525. https://doi.org/10.3390/mi15121525.

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GaN-on-Si high-electron-mobility transistors have emerged as the next generation of high-powered and cost-effective microwave devices; however, the limited thermal conductivity of the Si substrate prevents the realization of their potential. In this paper, a GaN-on-insulator (GNOI) structure is proposed to enhance the heat dissipation ability of a GaN-on-Si HEMT. Electrothermal simulation was carried out to analyze the thermal performance of the GNOI-on-Si HEMTs with different insulator dielectrics, including SiO2, SiC, AlN, and diamond. The thermal resistance of the HEMTs was found to be able to be obviously reduced and the DC performance of the device can be obviously improved by removing the low-thermal-conductivity III-nitride transition layer and forming a GNOI-on-Si structure with SiC, AlN, or diamond as the bonding insulator dielectrics.

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15

Wu, Jui Sheng, and Edward Yi Chang. "Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric." Materials Science Forum 1055 (March 4, 2022): 7–12. http://dx.doi.org/10.4028/p-180hme.

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In this study, the results indicate that a method combining fully-recessed wet etching and regrown channel by MOCVD is capable of obtaining high quality interface in GaN MIS-HEMT. A low Vth hysterisis GaN MIS-HEMT of 0.3V is demonstrated in this work. The GaN MIS-HEMT has a Vth of-1.5 V, a high Id,max of 771mA/mm and a RON of 13.5 Ω·mm. The wet etching shows good uniformity while the MOCVD grown AlN enhances the maximum drain current. The concept provides new insights to gate recess fabrication and MOCVD grown high quality dielectrics.

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16

Kim, Jeong-Gil, Chul-Ho Won, Do-Kywn Kim, Young-Woo Jo, Jun-Hyeok Lee, Yong-Tae Kim, Sorin Cristoloveanu, and Jung-Hee Lee. "Growth of AlN/GaN HEMT structure Using Indium-surfactant." JSTS:Journal of Semiconductor Technology and Science 15, no. 5 (October 30, 2015): 490–96. http://dx.doi.org/10.5573/jsts.2015.15.5.490.

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17

Durukan, İ. Kars, Ö. Akpınar, C. Avar, A. Gultekin, M. K. Öztürk, S. Özçelik, and E. Özbay. "Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications." Journal of Nanoelectronics and Optoelectronics 13, no. 3 (March 1, 2018): 331–34. http://dx.doi.org/10.1166/jno.2018.2239.

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18

Gowthami, Y., B.Balaji, and K. Srinivasa Rao. "Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics." Journal of Integrated Circuits and Systems 18, no. 1 (May 22, 2023): 1–8. http://dx.doi.org/10.29292/jics.v18i1.657.

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The Impact of Aluminium nitride (AlN) Spacer, Gallium Nitride (GaN) Cap Layer, Front Pi Gate (FG) and Back Pi Gate(BG), High K dielectric material such as Hafnium dioxide(HfO2), Aluminium Oxide (Al2O3), Silicon nitride (Si3N4) on Aluminium Galium Nitride/ Gallium Nitride (AlGaN/GaN), Heterojunction High Electron Mobility Transistor (HEMT) of 6nm(nanometer) technology is simulated and extracted the results using the Silvaco Atlas TCAD tool. The importance of High K dielectric materials like Al2O3 and Si3N4 are studied for the proposal of GaN HEMT. AlN, GaN Cap Layers, and High K Dielectric material are layered one on another to overcome the conventional transistor draw backs like surface defects, scattering of the electron, and less mobility of electron. Hot electron effect is overcome by Pi type gate. Therefore, by optimizing the HEMT structure the abilities for certain devices are converted to abilities. The dependency on DC characteristics and RF characteristics due to GaN Cap Layers, Multi gate (FG &BG), and High K Dielectric material is established. Further Compared Single Gate (SG) Passivated HEMT, Double Gate (DG) Passivated HEMT, Double Gate Triple(DGT) Tooth Passivated HEMT, High K Dielectric Front Pi Gate (FG) and Back Pi Gate (BG) Nanowire HEMT. It is observed that there is an increased Drain Current (Ion) of 5.92(A/mm), low Leakage current(Ioff) 5.54E-13 (A) of Transconductance (Gm) of 3.71(S/mm), Drain Conductance (Gd) of 1.769(S/mm), Cutoff frequency(fT) of 743 GHz Maximum Oscillation frequency (Fmax) 765 GHz, Minimum Threshold Voltage (Vth) of -4.5V, On Resistance (Ron)of 0.40(Ohms) at Vgs =0V. These outstanding characteristics and transistor structure of proposed HEMT and materials involved to apply for upcoming generation High-speed GHz frequency applications.

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19

Zhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.

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The totem-pole bridgeless power factor correction (PFC) rectifier has recently gained popularity for ac-dc power conversion. The emerging gallium nitride (GaN) high-electron-mobility transistor (HEMT), having a small body diode reverse recovery effect and low switching loss, is a promising device for use in the totem-pole approach. The design, fabrication, and thermal analysis of a GaN-based full-bridge multi-chip module (MCM) for totem-pole bridgeless PFC rectifier are introduced in this work. Four cascode GaN devices using the same pair of high-voltage GaN HEMT and low-voltage silicon (Si) power metal-oxide-semiconductor field-effect transistor (MOSFET) chips, as used in the discrete TO-220 package, were integrated onto one aluminum nitride direct-bonded-copper (AlN-DBC) substrate in a newly designed MCM. This integrated power module achieves the same function as four discrete devices mounted on the circuit board. In this module design, the Si and GaN bare die were arranged in a stack-die format for each cascode device to eliminate the critical common source inductance, and thus to reduce parasitic ringing at turn-off transients. In addition, an extra capacitor was added in parallel with the drain-source terminals of the Si MOSFET in each cascode GaN device to compensate for the mismatched junction capacitance between the Si MOSFET and GaN HEMT, which could accomplish the internal zero-voltage switching of the GaN device and reduce its turn-on loss. The AlN-DBC substrate and the flip-chip format were also applied in the module design. This GaN-based MCM shows an improved heat dissipation capability based on the thermal analysis and comparison with the discrete GaN device. The totem-pole bridgeless PFC rectifier built using this integrated power module is expected to have a peak efficiency of higher than 99% with a projected power density greater than 400 W/in3.

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20

Reilly, Caroline E., Nirupam Hatui, Thomas E. Mates, Shuji Nakamura, Steven P. DenBaars, and Stacia Keller. "2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature." Applied Physics Letters 118, no. 22 (May 31, 2021): 222103. http://dx.doi.org/10.1063/5.0050584.

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21

Huang, Chong-Rong, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, and Kuo-Jen Chang. "Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates." Membranes 11, no. 11 (October 30, 2021): 848. http://dx.doi.org/10.3390/membranes11110848.

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In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (IDS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower IDS degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.

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22

Vohra, Anurag, Karen Geens, Ming Zhao, Olga Syshchyk, Herwig Hahn, Dirk Fahle, Benoit Bakeroot, et al. "Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application." Applied Physics Letters 120, no. 26 (June 27, 2022): 261902. http://dx.doi.org/10.1063/5.0097797.

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In this work, we demonstrate the epitaxial growth of a gallium-nitride (GaN) buffer structure qualified for 1200 V applications on 200 mm engineered poly-AlN substrates with hard breakdown >1200 V. The manufacturability of a 1200 V qualified buffer structure opens doors to high voltage GaN-based power applications such as in electric cars. Key to achieving the high breakdown voltage is careful engineering of the complex epitaxial material stack in combination with the use of 200 mm engineered poly-AlN substrates. The CMOS-fab friendly engineered poly-AlN substrates have a coefficient of thermal expansion (CTE) that closely matches the CTE of the GaN/AlGaN epitaxial layers, paving the way for a thicker buffer structure on large diameter substrates, while maintaining the mechanical strength of the substrates and reaching higher voltage operation.

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23

Sun, Mengyuan, Luyu Wang, Penghao Zhang, and Kun Chen. "Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing." Micromachines 14, no. 6 (May 23, 2023): 1100. http://dx.doi.org/10.3390/mi14061100.

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A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al2O3/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD) and in situ N2 plasma annealing (NPA). Compared with the traditional RTA method, the NPA process not only avoids the device damage caused by high temperatures but also obtains a high-quality AlN monocrystalline film that avoids natural oxidation by in situ growth. As a contrast with the conventional PELAD amorphous AlN, C-V results indicated a significantly lower interface density of states (Dit) in a MIS C-V characterization, which could be attributed to the polarization effect induced by the AlN crystal from the X-ray Diffraction (XRD) and Transmission Electron Microscope (TEM) characterizations. The proposed method could reduce the subthreshold swing, and the Al2O3/AlN/GaN MIS-HEMTs were significantly enhanced with ~38% lower on-resistance at Vg = 10 V. What is more, in situ NPA provides a more stable threshold voltage (Vth) after a long gate stress time, and ΔVth is inhibited by about 40 mV under Vg,stress = 10 V for 1000 s, showing great potential for improving Al2O3/AlN/GaN MIS-HEMT gate reliability.

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24

Taking, S., D. MacFarlane, and E. Wasige. "AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results." Active and Passive Electronic Components 2011 (2011): 1–7. http://dx.doi.org/10.1155/2011/821305.

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Анотація:

Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

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25

Lu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, and Yue Hao. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade." Applied Physics Letters 120, no. 17 (April 25, 2022): 173502. http://dx.doi.org/10.1063/5.0088585.

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This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The fabricated transistors show a negligible hysteresis, a SS of 39 mV/dec, a large gate voltage swing of >4.2 V, and achieving an excellent quality factor Q = gm/SS of 6.3 μS-dec/ μm-mV. The negative differential resistance effect was found in the subthreshold region in the gate current–voltage ( Ig– VGS) curve. The hot carrier transfer mechanism that occurred in the turn-on/pinch-off progress of the CC-HEMT under the dual-directional sweep, proved by the VDS- and Lg-dependent bi-directional transfer I–V characteristics, can be responsible for these excellent device performances. This work is believed to encourage further study of the AlN/GaN platform to power the future group III-nitrides CMOS technology.

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26

Lu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, and Yue Hao. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade." Applied Physics Letters 120, no. 17 (April 25, 2022): 173502. http://dx.doi.org/10.1063/5.0088585.

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Анотація:

This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The fabricated transistors show a negligible hysteresis, a SS of 39 mV/dec, a large gate voltage swing of >4.2 V, and achieving an excellent quality factor Q = gm/SS of 6.3 μS-dec/ μm-mV. The negative differential resistance effect was found in the subthreshold region in the gate current–voltage ( Ig– VGS) curve. The hot carrier transfer mechanism that occurred in the turn-on/pinch-off progress of the CC-HEMT under the dual-directional sweep, proved by the VDS- and Lg-dependent bi-directional transfer I–V characteristics, can be responsible for these excellent device performances. This work is believed to encourage further study of the AlN/GaN platform to power the future group III-nitrides CMOS technology.

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27

Choi, Uiho, Kyeongjae Lee, Taemyung Kwak, Donghyeop Jung, Taehoon Jang, Yongjun Nam, Byeongchan So, et al. "Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT." Japanese Journal of Applied Physics 58, no. 12 (November 6, 2019): 121003. http://dx.doi.org/10.7567/1347-4065/ab4df3.

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28

Eustis, Tyler J., John Silcox, Michael J. Murphy, and William J. Schaff. "Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 188–94. http://dx.doi.org/10.1557/s1092578300004269.

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The presence of oxygen throughout the nominally AlN nucleation layer of a RF assisted MBE grown III-N HEMT was revealed upon examination by Electron Energy Loss Spectroscopy (EELS) in a Scanning Transmission Electron Microscope (STEM). The nucleation layer generates the correct polarity (gallium face) required for producing a piezoelectric induced high mobility two dimensional electron gas at the AlGaN/GaN heterojunction. Only AlN or AlGaN nucleation layers have provided gallium face polarity in RF assisted MBE grown III-N’s on sapphire. The sample was grown at Cornell University in a Varian GenII MBE using an EPI Uni-Bulb nitrogen plasma source. The nucleation layer was examined in the Cornell University STEM using Annular Dark Field (ADF) imaging and Parallel Electron Energy Loss Spectroscopy (PEELS). Bright Field TEM reveals a relatively crystallographically sharp interface, while the PEELS reveal a chemically diffuse interface. PEELS of the nitrogen and oxygen K-edges at approximately 5-Angstrom steps across the GaN/AlN/sapphire interfaces reveals the presence of oxygen in the AlN nucleation layer. The gradient suggests that the oxygen has diffused into the nucleation region from the sapphire substrate forming this oxygen containing AlN layer. Based on energy loss near edge structure (ELNES), oxygen is in octahedral interstitial sites in the AlN and Al is both tetrahedrally and octahedrally coordinated in the oxygen rich region of the AlN.

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29

Михайлович, С. В., А. Ю. Павлов, К. Н. Томош та Ю. В. Федоров. "Низкоэнергетическое бездефектное сухое травление барьерного слоя HEMT AlGaN/AlN/GaN". Письма в журнал технической физики 44, № 10 (2018): 61. http://dx.doi.org/10.21883/pjtf.2018.10.46100.17227.

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AbstractA method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled BCl_3 plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode.

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30

Koehler, Andrew D., Neeraj Nepal, Travis J. Anderson, Marko J. Tadjer, Karl D. Hobart, Charles R. Eddy, and Francis J. Kub. "Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation." IEEE Electron Device Letters 34, no. 9 (September 2013): 1115–17. http://dx.doi.org/10.1109/led.2013.2274429.

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31

Florovič, M., R. Szobolovszký, J. Kováč, J. Kováč, A. Chvála, J.-C. Jacquet, and S. L. Delage. "Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT." Semiconductor Science and Technology 34, no. 6 (May 21, 2019): 065021. http://dx.doi.org/10.1088/1361-6641/ab1737.

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32

Wang, Jie, Lingling Sun, Jun Liu, and Mingzhu Zhou. "A surface-potential-based model for AlGaN/AlN/GaN HEMT." Journal of Semiconductors 34, no. 9 (September 2013): 094002. http://dx.doi.org/10.1088/1674-4926/34/9/094002.

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33

Luo, Xin, Peng Cui, Tieying Zhang, Xinkun Yan, Siheng Chen, Liu Wang, Jiacheng Dai, et al. "High performance of AlGaN/GaN HEMT with AlN cap layer." Micro and Nanostructures 198 (February 2025): 208054. https://doi.org/10.1016/j.micrna.2024.208054.

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34

Mitterhuber, Lisa, René Hammer, Thomas Dengg, and Jürgen Spitaler. "Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications." Energies 13, no. 9 (May 9, 2020): 2363. http://dx.doi.org/10.3390/en13092363.

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To optimize the thermal design of AlGaN-GaN high-electron-mobility transistors (HEMTs), which incorporate high power densities, an accurate prediction of the underlying thermal transport mechanisms is crucial. Here, a HEMT-structure (Al0.17Ga0.83N, GaN, Al0.32Ga0.68N and AlN on a Si substrate) was investigated using a time-domain thermoreflectance (TDTR) setup. The different scattering contributions were investigated in the framework of phonon transport models (Callaway, Holland and Born-von-Karman). The thermal conductivities of all layers were found to decrease with a temperature between 300 K and 773 K, due to Umklapp scattering. The measurement showed that the AlN and GaN thermal conductivities were a magnitude higher than the thermal conductivity of Al0.32Ga0.68N and Al0.17Ga0.83N due to defect scattering. The layer thicknesses of the HEMT structure are in the length scale of the phonon mean free path, causing a reduction of their intrinsic thermal conductivity. The size-effect of the cross-plane thermal conductivity was investigated, which showed that the phonon transport model is a critical factor. At 300 K, we obtained a thermal conductivity of (130 ± 38) Wm−1K−1 for the (167 ± 7) nm thick AlN, (220 ± 38) Wm−1K−1 for the (1065 ± 7) nm thick GaN, (11.2 ± 0.7) Wm−1K−1 for the (423 ± 5) nm thick Al0.32Ga0.68N, and (9.7 ± 0.6) Wm−1K−1 for the (65 ± 5) nm thick Al0.17Ga0.83N. Respectively, these conductivity values were found to be 24%, 90%, 28% and 16% of the bulk values, using the Born-von-Karman model together with the Hua–Minnich suppression function approach. The thermal interface conductance as extracted from the TDTR measurements was compared to results given by the diffuse mismatch model and the phonon radiation limit, suggesting contributions from inelastic phonon-scattering processes at the interface. The knowledge of the individual thermal transport mechanisms is essential for understanding the thermal characteristics of the HEMT, and it is useful for improving the thermal management of HEMTs and their reliability.

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35

Jurkovic, M., D. Gregusova, V. Palankovski, Stefan Hascik, M. Blaho, K. Cico, K. Frohlich, J. Carlin, N. Grandjean, and J. Kuzmik. "Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region." IEEE Electron Device Letters 34, no. 3 (March 2013): 432–34. http://dx.doi.org/10.1109/led.2013.2241388.

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36

Adak, Sarosij, Arghyadeep Sarkar, Sanjit Swain, Hemant Pardeshi, Sudhansu Kumar Pati, and Chandan Kumar Sarkar. "High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT." Superlattices and Microstructures 75 (November 2014): 347–57. http://dx.doi.org/10.1016/j.spmi.2014.07.036.

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37

Dai, Jin-Ji, Thi Thu Mai, Ssu-Kuan Wu, Jing-Rong Peng, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Han-Chieh Ho, and Wei-Fan Wang. "High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT." Nanomaterials 11, no. 7 (July 7, 2021): 1766. http://dx.doi.org/10.3390/nano11071766.

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The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp2Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an AlN interlayer (IL) at the interface of p-GaN/AlGaN, the activation rate can be further improved after the doping concentration reaches saturation, and the diffusion of Mg atoms can also be effectively suppressed. A high hole concentration of about 1.3 × 1018 cm−3 can be achieved in the p-GaN/AlN-IL/AlGaN structure.

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38

Guo, Lunchun, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, and Guoxin Hu. "The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure." Microelectronics Journal 39, no. 5 (May 2008): 777–81. http://dx.doi.org/10.1016/j.mejo.2007.12.005.

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39

Gusev, A. S., A. O. Sultanov, A. V. Katkov, S. M. Ryndya, N. V. Siglovaya, A. N. Klochkov, R. V. Ryzhuk, N. I. Kargin, and D. P. Borisenko. "Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier." Russian Microelectronics 53, no. 3 (June 2024): 252–59. http://dx.doi.org/10.1134/s1063739724600304.

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40

Khediri, Abdelkrim, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, and Ali Soltani. "Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT." Micromachines 12, no. 11 (October 21, 2021): 1284. http://dx.doi.org/10.3390/mi12111284.

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In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V. The device has been modeled using numerical simulations to reproduce output and transfer characteristics. We identify, via experimental results and TCAD simulations, the main physical mechanisms responsible for the premature breakdown. The contribution of the AlN/Silicon substrate interface to the premature off-state breakdown is pointed out. Vertical leakage in lateral GaN devices significantly contributes to the off-state breakdown at high blocking voltages. The parasitic current path leads to premature breakdown before the appearance of avalanche or dielectric breakdown. A comparative study between a MOS-HEMT GaN on a silicon substrate with and without a SiNx interlayer at the AlN/Silicon substrate interface is presented here. We show that it is possible to increase the breakdown voltages of the fabricated transistors on a silicon substrate using SiNx interlayer.

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41

Hamady, Saleem, Bilal Beydoun, and Frédéric Morancho. "TCAD-Based Analysis on the Impact of AlN Interlayer in Normally-off AlGaN/GaN MISHEMTs with Buried p-Region." Electronics 14, no. 2 (January 14, 2025): 313. https://doi.org/10.3390/electronics14020313.

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With the growing demand for more efficient power conversion and silicon reaching its theoretical limit, wide bandgap semiconductor devices are emerging as a potential solution. For instance, Gallium Nitride (GaN)-based high-electron-mobility transistors (HEMTs) are getting more attention, and several structures for the normally off operation have been proposed. Adding an AlN interlayer in conventional AlGaN/GaN normally on HEMT structures is known to enhance the current density. In this work, the effect of an AlN interlayer in the normally off AlGaN/GaN MISHEMT with a buried p-region was investigated using a TCAD simulation from Silvaco. The added AlN interlayer increases the two-dimensional electron gas density, requiring a higher p-doping concentration to achieve the same threshold voltage. The simulation results show that the overall effect is a reduction in the device’s current density and peak transconductance by 21.83% and 44.4%, respectively. Further analysis of the current profile shows that because of the buried p-region and at high gate voltages, the current flows near the AlGaN/GaN interface and along the insulator/AlGaN interface. Adding an AlN interface blocks the migration of channel electrons to the insulator/AlGaN interface, resulting in a lower current density.

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42

Piner, E. L., D. M. Keogh, J. S. Flynn, and J. M. Redwing. "AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 349–54. http://dx.doi.org/10.1557/s109257830000449x.

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We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.

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43

Sidi Mohammed Hadj, Irid, Mohammed Khaouani, Imane Four, Zakarya KOURDI, and Omar Azzoug. "SPSPT Switch Based AlN/GaN/AlGaN HEMT on Ku to Ku to V-Band for Satellite Application." Journal of Integrated Circuits and Systems 19, no. 3 (December 23, 2024): 1–4. https://doi.org/10.29292/jics.v19i3.885.

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This paper details the design, fabrication, and characterization of a single-pole-single-throw (SPST) switch leveraging Aluminum Nitride/Gallium Nitride/Aluminum Gallium Nitride High Electron Mobility Transistor (AlN/GaN/AlGaN HEMT) technology specifically tailored for Ku to V-band satellite applications. The switch targets high-frequency operation within the 40 GHz to 75 GHz range to satisfy the demanding specifications of satellite communication systems. The design integrates AlN, GaN, and AlGaN layers to capitalize on the superior electrical properties of GaN-based transistors while guaranteeing robust isolation and performance enhancement through AlN and AlGaN integration. Design optimization focuses on achieving high isolation, minimal insertion loss and fast switching speeds - all primordial parameters for satellite communication links. Characterization simulations explore improvements in key metrics such as insertion loss, isolation, and switching time at V-band frequencies. In addition, the switch's performance is evaluated under varying temperature and radiation conditions to ensure reliability and suitability for space environments. Early findings suggest favorable performance attributes, hinting at the potential of the proposed SPSPT switch for V-band satellite applications, thereby contributing the progression of space-based RF technology.

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44

Varghese, Arathy, Ashish Kumar, Arun Kishor Johar, Girraj Sharma, Sandeep Vyas, and Mahendra singh Yadav. "AlGaN/AlN/GaN SG-HEMT as pH detector: A simulation study." Materials Today: Proceedings 46 (2021): 5927–30. http://dx.doi.org/10.1016/j.matpr.2021.03.740.

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45

Li, Jialin, Yian Yin, Ni Zeng, Fengbo Liao, Mengxiao Lian, Xichen Zhang, Keming Zhang, and Jingbo Li. "Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate." Superlattices and Microstructures 161 (January 2022): 107064. http://dx.doi.org/10.1016/j.spmi.2021.107064.

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46

Lutsenko, E. V., M. V. Rzheutski, A. G. Vainilovich, I. E. Svitsiankou, V. A. Shulenkova, E. V. Muravitskaya, A. N. Alexeev, S. I. Petrov, and G. P. Yablonskii. "MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3." Semiconductors 52, no. 16 (December 2018): 2107–10. http://dx.doi.org/10.1134/s1063782618160170.

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47

Nidhi, Sansaptak Dasgupta, Yi Pei, Brian L. Swenson, Stacia Keller, James S. Speck, and Umesh K. Mishra. "N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications." IEEE Electron Device Letters 31, no. 12 (December 2010): 1437–39. http://dx.doi.org/10.1109/led.2010.2078791.

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48

Chen, P. G., M. Tang, M. H. Liao, and M. H. Lee. "In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact." Solid-State Electronics 129 (March 2017): 206–9. http://dx.doi.org/10.1016/j.sse.2016.11.002.

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49

Wang, Yan-Ping, Yin-Hong Luo, Wei Wang, Ke-Ying Zhang, Hong-Xia Guo, Xiao-Qiang Guo, and Yuan-Ming Wang. "60 Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices." Chinese Physics C 37, no. 5 (May 2013): 056201. http://dx.doi.org/10.1088/1674-1137/37/5/056201.

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50

Gassoumi, M., A. Helali, M. Gassoumi, Z. Elleuch, N. Boughdiri, H. Guesmi, S. Rejab, and H. Maaref. "Electron confinement enhancement in AlGaN/AlN/GaN HEMT using BGaN buffer." Journal of Ovonic Research 19, no. 1 (February 20, 2023): 81–86. http://dx.doi.org/10.15251/jor.2023.191.81.

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When the AlGaN/GaN high electron mobility transistor (HEMT) is strongly biased, the speed of the electrons in the channel increases, which leads to an injection of electrons into the buffer, and consequently the appearance of the "short channel effect" phenomenon, which limits the performance of the component to overcome this effect and increase the power/frequency performance of the component, one solution consists in using a confinement barrier. This involves placing an electrostatic barrier under the GaN channel so as to block the injection of electrons into the buffer layer when the transistor is highly biased, and a BGaN confinement barrier because this semiconductor has very interesting physical properties, as well as better electrical isolation between the well and the substrate thanks to the optimization of the buffer. In this paper, the main objective is to study the effect of adding BGaN confinement barrier and its influence on transistor performance.

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