Статті в журналах: "He thin film"

1

Cieslikowski, D., P. Leiderer, and A. J. Dahm. "Mobility oscillations of electrons on thin He films." Canadian Journal of Physics 65, no. 11 (November 1, 1987): 1525–31. http://dx.doi.org/10.1139/p87-243.

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We have studied electrons above liquid films of 3He and 4He condensed on various solid substrates. For helium films on solid hydrogen, pronounced oscillations of the electron mobility are observed as the film thickness is changed. The oscillations are related to the formation of layers of the liquid close to the wall. Our results indicate substantial layering of the films up to nearly 10 atomic distances.

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2

MILLER, M. D., and E. KROTSCHECK. "THEORY OF THIRD SOUND AND STABILITY OF THIN 3He–4He SUPERFLUID FILMS." International Journal of Modern Physics B 21, no. 13n14 (May 30, 2007): 2091–102. http://dx.doi.org/10.1142/s021797920704349x.

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In this paper, we summarize the results of recent studies of third sound in thin, superfluid 3 He -4 He mixture films and the relation of the third sound spectrum to the question of the films' thermodynamic stability. We have considered films on several representative substrates: Nuclepore, glass, Li and Na . Our approach utilizes the variational, hypernetted chain/Euler-Lagrange (HNC–EL) theory as applied to inhomogeneous boson systems to calculate chemical potentials for both the 4 He superfluid film and the physisorbed 3 He . Numerical density derivatives of the chemical potentials lead to the sought-after third sound speeds. On all substrates, the third sound speeds show a series of oscillations as a function of film coverage that is driven by the layered structure of the 4 He film. We find that the effect on the third sound response of adding a small amount of 3 He to the 4 He film can depend sensitively on the particular 4 He film coverage. The third sound speed can either increase or decrease. In fact, in some regimes, the added 3 He destabilizes the film and can drive "layering transitions" leading to quite complicated geometric structures of the film in which the outermost layer consists of phase–separated regimes of 3 He and 4 He . Finally, we examine the range of applicability of the usual film–averaged hydrodynamic description. We find that at least up to film thicknesses of six liquid layers, there is no regime in which this hydrodynamic description is applicable.

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3

KROTSCHECK, E., and M. D. MILLER. "GENERIC ELECTRON MOBILITY IN SURFACE STATES ON HELIUM FILMS." International Journal of Modern Physics B 21, no. 13n14 (May 30, 2007): 2103–14. http://dx.doi.org/10.1142/s0217979207043506.

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We study the mobility of electrons adsorbed to thin 4 He films. Utilizing the time-dependent version of the Euler-Lagrange, hypernetted chain variational theory, we compute the inelastic scattering rate of an electron due to collisions with film excitations (third sound). We obtain an analytic result valid in the long wavelength limit. In agreement with experiment, the mobility shows oscillations due to the underlying transverse film structure. The oscillations are explicitly due to the appearance of the third sound speed in the scattering rate since the third sound speed itself oscillates in conjunction with the 4 He film structure. The mobilities tend to be higher than reported mobilities on thin films, which we attribute to substrate structure. We interpret our results as generic mobilities that are valid in the limit of perfectly smooth, structureless substrates.

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4

Stanford, Michael G., Joo Hyon Noh, Kyle Mahady, Anton V. Ievlev, Peter Maksymovych, Olga S. Ovchinnikova, and Philip D. Rack. "Room-Temperature Activation of InGaZnO Thin-Film Transistors via He+ Irradiation." ACS Applied Materials & Interfaces 9, no. 40 (September 28, 2017): 35125–32. http://dx.doi.org/10.1021/acsami.7b10449.

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5

Kurokawa, Mao, Takao Shimizu, Mutsuo Uehara, Atsuo Katagiri, Kensuke Akiyama, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, and Hiroshi Funakubo. "Control ofp- andn-type Conduction in Thermoelectric Non-doped Mg2Si Thin Films Prepared by Sputtering Method." MRS Advances 3, no. 24 (2018): 1355–59. http://dx.doi.org/10.1557/adv.2018.150.

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ABSTRACTA method for controlling the conduction-type in Mg2Si films without doping is investigated. Mg2Si films exhibit p-type conduction after a post-heat treatment up to 500 °C in atmospheric He. However, covering the films with Mg ribbon during a subsequent heat treatment at 500 °C converts the conduction to n-type, demonstrating that the heat treatment atmosphere can control the conduction type. Based on the reported first principles calculations suggesting that interstitial Mg and Mg vacancies in Mg2Si are the origins of n-type and p-type conduction, respectively, the post-heat treatment in He induces Mg vacancies due to the evaporation of Mg from the film, resulting in p-type conduction. The subsequent heat treatment when the film is covered with Mg ribbon fills the Mg vacancies and the additional interstitial Mg is incorporated, resulting in n-type conduction. These observations differ from the reported data for heat treatment of stable n-type conduction in non-doped Mg2Si-sintered bodies and may realize a novel control method for the conduction type in Mg2Si films.

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6

UEMURA, Y. J. "WHAT CAN WE LEARN FROM COMPARISON BETWEEN CUPRATES AND HE FILMS?: PHASE SEPARATION AND FLUCTUATING SUPERFLUIDITY." International Journal of Modern Physics B 14, no. 29n31 (December 20, 2000): 3703–10. http://dx.doi.org/10.1142/s0217979200004258.

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In the underdoped, overdoped, Zn-doped or stripe-forming regions of high-Tc cuprate superconductors (HTSC), the superfluid density ns/m* at T→ 0 shows universal correlations with Tc. Similar strong correlations exist between 2-dimensional superfluid density and superfluid transition temperature in thin films of 4 He in non-porous or porous media, and 4 He /3 He film adsorbed on porous media. Based on analogy between HTSC and He film systems, we propose a model for cuprates where: (1) the overdoped region is characterized by a phase separation similar to 4 He /3 He ; and (2) pair (boson) formation and fluctuating superconductivity occur at separate temperatures above Tc in the underdoped region.

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7

Miyaguchi, Kazuya, Shin Kajita, Hirohiko Tanaka, and Noriyasu Ohno. "Fabrication of nanostructured Ti thin film with Ti deposition in He plasmas." Japanese Journal of Applied Physics 60, no. 3 (February 19, 2021): 038004. http://dx.doi.org/10.35848/1347-4065/abe3a5.

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8

El Hog, Sahbi, and H. T. Diep. "Tricriticality of the Blume–Emery–Griffiths model in thin films of stacked triangular lattices." Modern Physics Letters B 30, no. 07 (March 20, 2016): 1650071. http://dx.doi.org/10.1142/s0217984916500718.

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We study in this paper the Blume–Emery–Griffiths model in a thin film of stacked triangular lattices. The model is described by three parameters: bilinear exchange interaction between spins [Formula: see text], quadratic exchange interaction [Formula: see text] and single-ion anisotropy [Formula: see text]. The spin [Formula: see text] at the lattice site [Formula: see text] takes three values [Formula: see text]. This model can describe the mixing phase of He-4 [Formula: see text] and He-3 [Formula: see text] at low temperatures. Using Monte Carlo simulations, we show that there exists a critical value of [Formula: see text] below (above) which the transition is of second-(first-)order. In general, the temperature dependence of the concentrations of He-3 is different from layer by layer. At a finite temperature in the superfluid phase, the film surface shows a deficit of He-4 with respect to interior layers. However, effects of surface interaction parameters can reverse this situation. Effects of the film thickness on physical properties will be also shown as functions of temperature.

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9

Lee, Baek-Ju, Yoo-Seong Kim, Dong-Won Seo, and Jae-Wook Choi. "The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition." Coatings 13, no. 1 (January 5, 2023): 104. http://dx.doi.org/10.3390/coatings13010104.

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In this study, the effect of deposition temperature of TiN thin films deposited using the thermal atomic layer deposition (ALD) method was investigated. TiCl4 precursor and NH3 reactive gas were used, and the deposition rate, resistivity change, and surface morphology characteristics were compared in the deposition temperature range of 400 °C–600°C. While resistivity decreased to 177 µΩcm as the deposition temperature increased to 600 °C, an increase in surface roughness (Rq) to 0.69 nm and a deterioration in the step coverage were identified. In order to obtain a high-quality TiN thin film with excellent resistivity and step coverage characteristics even at low deposition temperatures, the TiN thin film was post-treated with plasma in a combination of N2/He gas ratio of 3:2 to confirm the change in resistivity. X-ray diffraction analysis confirmed crystallization change in the TiN thin film caused by plasma energy. As a result, the resistivity of the TiN thin film deposited at 400 °C was confirmed to be lowered by about 25%.

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10

Xiang, Xuepeng, Jingjing Rao, Zuyun He, Mengzhen Zhou, Qicheng Huang, Yuan Gao, Zhen Fan, Xinwei Wang, and Yan Chen. "Tailoring resistive switching in epitaxial SrCoO_2.5 films by irradiation induced uniaxial strain." Journal of Applied Physics 132, no. 3 (July 21, 2022): 035304. http://dx.doi.org/10.1063/5.0099200.

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Strain engineering has been widely applied to tune the performance of oxide thin film based devices. To precisely regulate the strain state of the thin film, nevertheless, still remains a challenging task. Herein, we demonstrate that the uniaxial strain along the c-axis of epitaxial SrCoO2.5 (SCO) (001) thin film can be continuously controlled by low-energy helium (He) irradiation (5 keV), leading to noticeable enhancement in resistive switching (RS) performance. All the irradiated SCO thin films exhibit out-of-plane tensile strain due to the implanted He interstitials in the lattice, and the strain increases linearly from 0.447% to 2.785% as the ion fluence increases from 1 × 1014 to 1 × 1015 ion/cm2. Although all the irradiated SCO-based devices follow similar conductive filaments mechanism as the pristine device, the performance shows a volcano shape dependence on the irradiation fluence. The device subjected to irradiation of 1 × 1014 ion/cm2 shows the optimal performance with the highest ON/OFF ratio and good endurance. Such dependence of RS behavior on irradiation-induced uniaxial strain is attributed to the widely observed nonlinear dependence of oxygen migration on the elastic tensile strain. Our results provide an effective strategy to regulate the strain states and the correlating functionality of oxide thin films.

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11

Chiriaev, Serguei, Luciana Tavares, Vadzim Adashkevich, Arkadiusz J. Goszczak, and Horst-Günter Rubahn. "Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams." Beilstein Journal of Nanotechnology 11 (November 6, 2020): 1693–703. http://dx.doi.org/10.3762/bjnano.11.151.

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This work explores a new technique for the out-of-plane patterning of metal thin films prefabricated on the surface of a polymer substrate. This technique is based on an ion-beam-induced material modification in the bulk of the polymer. Effects of subsurface and surface processes on the surface morphology have been studied for three polymer materials: poly(methyl methacrylate), polycarbonate, and polydimethylsiloxane, by using focused ion beam irradiation with He+, Ne+, and Ga+. Thin films of a Pt60Pd40 alloy and of pristine Au were used to compare the patterning of thin films with different microstructures. We show that the height of Pt60Pd40 thin films deposited onto poly(methyl methacrylate) and polycarbonate substrates can be patterned by He+ ion beams with ultrahigh precision (nanometers) while preserving in-plane features, at the nanoscale, of the pre-deposited films. Ion irradiation of the Au-coated samples results in delamination, bulging, and perforation of the Au film, which is attributed to the accumulation of gases from radiolysis at the film–substrate interface. The irradiation with Ne+ and Ga+ ions destroys the films and roughens the surface due to dominating sputtering processes. A very different behavior, resulting in the formation of complex, multiscale 3D patterns, is observed for polydimethylsiloxane samples. The roles of the metal film structure, elastic properties of the polymer substrate, and irradiation-induced mechanical strain in the patterning process are elaborated and discussed.

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12

Woo, Jong-Chang, Young-Hee Joo, Jung-Soo Park, and Chang-Il Kim. "A Study of the Dry Etching Properties of TiN Thin Film in He/BCl3/Cl2Inductively Coupled Plasma." Journal of the Korean Institute of Electrical and Electronic Material Engineers 24, no. 9 (September 1, 2011): 718–22. http://dx.doi.org/10.4313/jkem.2011.24.9.718.

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13

Mio, Norikatsu, Mei-Fei Ko, Wei-Tou Ni, Sheau-shi Pan, Akito Araya, Shigenori Moriwaki, and Kimio Tsubono. "Design of a stabilized He–Ne laser by using a thin-film heater." Applied Optics 32, no. 30 (October 20, 1993): 5944. http://dx.doi.org/10.1364/ao.32.005944.

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14

Saitoh, Motohiko. "Melting temperature of two-dimensional electron crystals trapped on thin-film liquid He." Physical Review B 40, no. 1 (July 1, 1989): 810–12. http://dx.doi.org/10.1103/physrevb.40.810.

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15

Yotoriyama, Tasuku, Yoshiaki Suzuki, Takaya Mise, Takeyo Tsukamoto, and Masaya Iwaki. "Surface characterization of thin film induced by He+ ion-beam irradiation into PLLA." Surface and Coatings Technology 196, no. 1-3 (June 2005): 383–88. http://dx.doi.org/10.1016/j.surfcoat.2004.08.157.

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16

Eggenkamp, M. E. W., H. Khalil, J. P. Laheurte, J. C. Noiray, and J. P. Romagnan. "Heat Diffusion through a Glass Substrate Coated by a Thin 4 He Film." Europhysics Letters (EPL) 21, no. 5 (February 10, 1993): 587–92. http://dx.doi.org/10.1209/0295-5075/21/5/014.

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17

Takechi, Kazushige, Yuya Kuwahara, Jun Tanaka, and Hiroshi Tanabe. "Depth-profiling XPS analysis of He-plasma treated amorphous InGaZnO thin films for use in top-gate coplanar thin-film transistors." Japanese Journal of Applied Physics 58, no. 3 (February 11, 2019): 038005. http://dx.doi.org/10.7567/1347-4065/aafed3.

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18

Grigorian, Galina, Izabela Konkol, and Adam Cenian. "In Situ Analyses of Surface-Layer Composition of CxNy Thin Films Using Methods Based on Penning Ionization Processes—Introductory Investigations." Materials 14, no. 24 (December 17, 2021): 7812. http://dx.doi.org/10.3390/ma14247812.

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Carbon nitride materials have received much attention due to their excellent tribological, mechanical and optical properties. It was found that these qualities depend on the N/C ratio; therefore, the possibility to control it in situ in the sputtered film is of high importance. The plasma-electron spectroscopy method based on the Penning ionization process analysis is developed here to control this ratio in CNx films produced by plasma-sputtering in a pulsed-periodic regime of glow discharge. The electron energy distribution function is determined by the means of a single Langmuir probe placed in the center of the discharge tube. The mixture N2:CH4:He was used in the process of sputtering. The applied concentrations of CH4 varied in the range of 2–8%, and He concentration was 80–90%. The gas pressure in the discharge tube used for sputtering varied between 1 and 10 Torr, and the current was between 10 and 50 mA. It was shown that the proposed method enables the extraction of information on the composition of the surface layer of the investigated film and the development of an on-line inspection, without extracting the film from the sputtering chamber.

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19

Huang, T. C. "Correlations Between X-Ray Microstructures and Magnetic Properties of CoCrTa Alloy thin Films." Advances in X-ray Analysis 31 (1987): 107–12. http://dx.doi.org/10.1154/s037603080002190x.

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AbstractThin film structures determined by X-ray reflection and transmission diffractometer methods has been used to co rrelate with th e magnetic p roperties of CoCrTa thin films. Well-crystallized CoCrTa alloy particles with strong h.c.p. c-axis preferred oriented normal to the film surfaces were found to be mainly responsible for the perpendicular magnetic anisotropy observed in specimens IL and 8L, whereas poorly crystallized CoCrTa particles in the 150Å thick magnetic layers of a third specimen 33L have led to an observed longitudinal magnetization. Microstrains generated by the crystalline - amorphous interface stresses induced an enhanced perpendicular magnetic anisotropy in specimen 8L. Values of crystallite size D determined from the Warren-Averbach analysis were correlated with the coercivities He. Analysis of the He vs. D curve indicated th a t the critical particle size for a magnetic multi- to single-domain transition was 270± 25Å. The retention in coercivity (Hc=175 Oe) at a small particle size (D=75Å) in specimen 8L suggested that strong interparticle interactions existed among the wellcrystallized CoCrTa particles. A much smaller retention in coercivity (Hc=90 Oe) at D=70Å of specimen 33L indicated the inter particle interactions in poorly crystallized CoCrTa layers were relatively weak.

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20

Joyce, Bruce A., and Michael J. Stowell. "Donald William Pashley. 21 April 1927 — 16 May 2009." Biographical Memoirs of Fellows of the Royal Society 56 (January 2010): 317–40. http://dx.doi.org/10.1098/rsbm.2010.0009.

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Donald William (Don) Pashley was one of the most innovative materials scientists of his generation. He was distinguished for his electron diffraction and transmission electron microscope studies of epitaxial thin films, especially for in situ investigations, work that contributed enormously to our understanding of film growth processes. He pioneered the use of moiré patterns to reveal dislocations and other defects. He also made important contributions to long-range disorder effects on semiconductor surfaces and to the structure of low-dimensional semiconductor systems.

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21

Islam, Ahatashamul, Fariha Tasneem, Zulfiqar Hasan Khan, Asif Rakib, Syed Farid Uddin Farhad, Aminul I. Talukder, AFM Yusuf Haider, and Md Wahadoszamen. "Economically reproducible surface-enhanced Raman spectroscopy of different compounds in thin film." Journal of Bangladesh Academy of Sciences 45, no. 1 (July 15, 2021): 1–11. http://dx.doi.org/10.3329/jbas.v45i1.54255.

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We report herein an economically cheap and functionally stable surfaceenhanced Raman scattering (SERS) protocol of two photoactive pigments Rhodamine 6G (R6G) and Kiton Red (KR), implemented in thin films of silver (Ag) and gold (Au) nanoparticles (AgNPs and AuNPs). Both commercially available and chemically synthesized nanoparticles were used. The suitability of the nanoparticles toward SERS activity was tested through UV-visible absorption spectroscopy and scanning electron microscopy (SEM). The AgNPs and AuNPs based SERS substrates in the form of films were fabricated onto square-sized aluminum(Al) plates by simple drop deposition of colloidal nanoparticles solution onto their polished surfaces. The prepared nanoparticle films were sufficiently dried and coated further with the probe (R6G and KR) molecules by employing the identical deposition technique. The enhanced Raman signals of R6G and KR in such composite film structures were then recorded through a custom-built dispersive Raman spectrometer with He-Ne laser excitation at 632.8 nm. Our AgNPsfilm-based SERS protocol could yield the magnitude of the Raman signal enhancement up to 104 times for both R6G and KR. Moreover, AuNPs-based film was found to be less efficient toward the Raman enhancement of both compounds. Our SERS substrates can be easily fabricated, and SERS spectra are reproducible and stable, allowing one to consistently get a reproducible result even after 6 months. J. Bangladesh Acad. Sci. 45(1); 1-11: June 2021

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22

Kuo, Yue. "(Invited) Plasma-Based Thin Film Technology in Fabrication of Nano- to Giga-Sized Electronics." ECS Meeting Abstracts MA2022-02, no. 30 (October 9, 2022): 1106. http://dx.doi.org/10.1149/ma2022-02301106mtgabs.

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This talk is presented to honor Professor Noel Buckley who has made many important contributions in compound semiconductors, copper thin film deposition, batteries, and other topics critical to the manufacture of modern optoelectronics. He is also a good friend, colleague, and collaborator for 3 decades. Plasma technology has been broadly used in the mass production of modern electronics varying from nano-sized devices in ICs to giga-dimension flat panel displays. It is especially critical to the preparation of thin films with well-controlled properties, geometry, and reliability. In this talk, the speaker shall discuss the recent development of plasma thin film deposition, etching, and reaction in his laboratory for the manufacture of electronic and optoelectronic products. Room-temperature plasma-based copper etch processes for sub 0.5 μm geometry patterns ICs and large-area direct-view TFT LCDs Sputter deposited sub 1 nm EOT high-k gate dielectrics, nanocrystals embedded high-k dielectric nonvolatile memories, and solid-state incandescent light emitting devices (SSI-LEDs) Plasma oxidation of copper as a self-aligned passivation film

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23

SREEKUMAR, J., and V. M. NANDAKUMARAN. "TWO DIMENSIONAL LARGE AMPLITUDE QUASI SOLITONS IN THIN HELIUM FILMS." Modern Physics Letters B 04, no. 01 (January 10, 1990): 47–51. http://dx.doi.org/10.1142/s0217984990000088.

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Large amplitude local density fluctuations in a thin superfluid 4 He film is considered. It is shown that these large amplitude fluctuations travel and behave like "quasi-solitons" under collision, even when the full nonlinearity arising from the Van der Waals potential is taken into account.

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24

Kim, In kyo, Jong Hyeuk Lim, and Geun Young Yeom. "Characteristics of hydrogenated silicon thin film deposited by RF-PECVD using He–SiH4 mixture." Vacuum 86, no. 1 (July 2011): 82–86. http://dx.doi.org/10.1016/j.vacuum.2011.04.018.

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25

Kakiuchi, Hiroaki, Hiromasa Ohmi, Seiya Takeda, and Kiyoshi Yasutake. "Improvement of deposition characteristics of silicon oxide layers using argon-based atmospheric-pressure very high-frequency plasma." Journal of Applied Physics 132, no. 10 (September 14, 2022): 103302. http://dx.doi.org/10.1063/5.0101596.

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We have investigated the deposition characteristics of silicon oxide (SiO x) layers in atmospheric pressure (AP) argon (Ar)-based plasma at a substrate temperature of 120 °C. A 150 MHz, very high-frequency (VHF) power is effectively used for exciting stable and uniform hexamethyldisiloxane (HMDSO)-oxygen (O2) fed plasma under AP. The microstructure of the SiO x layers is discussed in comparison with that by using helium (He)-based plasma. In the case of depositions with He/HMDSO/O2 plasma, SiO2-like films with uniform thickness, which have sufficient compactness to be used as the gate dielectrics of bottom-gate thin film transistors, can be obtained by moving substrate at a constant speed during the plasma operation. However, the decrease in the total gas flow rate (increase in the gas residence time in the plasma) causes the increase in the participation of nanoparticles to the film growth, which might result in the deterioration of film quality. Shortening the electrode length is effective for avoiding the incorporation of nanoparticles into the growing SiO x films. On the other hand, when Ar/HMDSO/O2 plasma is used, no deterioration of film compactness is observed irrespective of the gas flow rate. The results obtained in this study demonstrate the effectiveness of the VHF excitation of AP plasma on the generation of stable and uniform glow discharge without using He, which will lead to the development of a highly efficient and reduced cost formation process of good-quality SiO x films.

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26

Beyer, W., W. Hilgers, D. Lennartz, F. C. Maier, N. H. Nickel, F. Pennartz, and P. Prunici. "Microstructure Characterization of Amorphous Silicon Films by Effusion Measurements of Implanted Helium." MRS Proceedings 1536 (2013): 175–80. http://dx.doi.org/10.1557/opl.2013.746.

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ABSTRACTAn important property of thin film silicon and related materials is the microstructure which may involve the presence of interconnected and isolated voids. We report on effusion measurements of implanted helium (He) to detect such voids. Several series of hydrogenated and unhydrogenated amorphous silicon films prepared by the methods of plasma deposition, hot wire deposition and vacuum evaporation were investigated. The results show common features like a He effusion peak at low temperatures attributed to He out-diffusion through a compact material or through interconnected voids, and a He effusion peak at high temperatures attributed to He trapped in isolated voids. While undoped plasma-grown device-grade hydrogenated amorphous silicon (a-Si:H) films show a rather low concentration of such isolated voids, its concentration can be rather high in doped a-Si:H, in unhydrogenated evaporated material and others.

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27

Wu, Xuelian, Cui Ying Toe, Chenliang Su, Yun Hau Ng, Rose Amal, and Jason Scott. "Preparation of Bi-based photocatalysts in the form of powdered particles and thin films: a review." Journal of Materials Chemistry A 8, no. 31 (2020): 15302–18. http://dx.doi.org/10.1039/d0ta01180k.

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A comprehensive survey on preparation methods of powdered or thin-film Bi-based photocatalysts is provided, comparing he diverse approaches and their advantages and limitations in the context of photocatalytic and photoelectrochemical applications.

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28

Kelman, Maxim B., Paul C. McIntyre, Bryan C. Hendrix, Steven M. Bilodeau, Jeffrey F. Roeder, and Sean Brennan. "Structural analysis of coexisting tetragonal and rhombohedral phases in polycrystalline Pb(Zr0.35Ti0.65)O3 thin films." Journal of Materials Research 18, no. 1 (January 2003): 173–79. http://dx.doi.org/10.1557/jmr.2003.0024.

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Structural properties of polycrystalline Pb(Zr0.35Ti0.65)O3 (PZT) thin films grown by metalorganic chemical vapor deposition on Ir bottom electrodes were investigated. Symmetric x-ray diffraction measurements showed that as-deposited 1500 íthick PZT films are partially tetragonal and partially rhombohedral. Cross-section scanning electron microscopy showed that these films have a polycrystalline columnar microstructure with grains extending through the thickness of the film. X-ray depth profiling using the grazing-incidence asymmetric Bragg scattering geometry suggests that each grain has a bilayer structure consisting of a near-surface region in the etragonal phase and the region at the bottom electrode interface in the rhombohedral hase. The required compatibility between the tetragonal and rhombohedral phases in he proposed layered structure of the 1500 Å PZT can explain the peak shifts observed n the symmetric x-ray diffraction results of thicker PZT films.

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29

Ionescu, Mihail, Bryce Richards, Keith McIntosh, R. Siegele, E. Stelcer, D. D. Cohen, and Tara Chandra. "Hydrogen Measurements in SiN_x: H/Si Thin Films by ERDA." Materials Science Forum 539-543 (March 2007): 3551–56. http://dx.doi.org/10.4028/www.scientific.net/msf.539-543.3551.

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Thin SiN film deposited on Si by plasma enhanced chemical vapour deposition (PECVD) is used for surface passivation of Si. During the PECVD process Hydrogen is incorporated into the SiN film, and the passivation properties of the resulting SiNx:H layers play an important role in enhancing the energy conversion efficiency of solar cells. It is believed that the Hydrogen present in SiNx:H is responsible for this enhancement, and therefore its concentration in the passivating layer is an important parameter. The Hydrogen composition and its depth profile in thin SiNx:H films of 20nm to 200nm was measured by elastic recoil detection analysis (ERDA), using a 1.7MeV He+ ion beam of (1x2)mm2, generated by a high stability 2MV Tandetron ion beam accelerator. Simultaneously, Rutherford backscattering (RBS) spectra were recorded for each sample. The results show that the Hydrogen concentration in the SiNx:H layers is dependent of the deposition conditions. Also, Hydrogen was found to be homogenously distributed across the SiNx:H layer thickness, and the SiNx:H/Si interfaces were well defined.

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30

Checchetto, Riccardo. "Experimental Study on the Transport of Light Gas Molecules through Low-Density Polyethylene Films." International Journal of Polymer Science 2018 (October 25, 2018): 1–9. http://dx.doi.org/10.1155/2018/4903904.

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An original experimental procedure for the study of gas permeation process through thin polymer films is presented. Employing mass spectroscopy techniques, this procedure allows the detection of the permeation flux with a signal-to-noise ratio large enough to obtain accurate measurements of the gas diffusivity also in processes with transient transport conditions lasting for short-interval times (~few seconds). The procedure is validated using as test material a thin low-density polyethylene (LDPE) film: the transport of four test gases with different molecular sizes and condensation properties (CO2, N2, D2, and He) is studied in the 295 to 350 K temperature interval. The CO2 diffusivity values well compare with values previously obtained studying the same LDPE film samples by integral permeation technique measuring the time lag value. Original data on the diffusivity of the He and D2 penetrant molecules are reported: in the examined temperature range, the diffusivity values of these small-size penetrants are in the 10−6 cm2/s range and follow an Arrhenius behavior with temperature. The activation energy values for diffusion are 18.8 ± 0.4 and 10.0 ± 0.4 kJ/mol for D2 and He, respectively.

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31

TAKAHASHI, Masao, Hideyuki SUGIYAMA, Shinichi KIKKAWA, Fumikazu KANAMARU, Makoto HARADA, and Iwao WATANABE. "Local Structure Analysis of Sputter-Deposited Metal Nitride Thin Film Using He Ion Yield XAFS." Journal of the Society of Materials Science, Japan 47, no. 6 (1998): 580–85. http://dx.doi.org/10.2472/jsms.47.580.

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32

Backmeister, Lucas, Bernd Aichner, Max Karrer, Katja Wurster, Reinhold Kleiner, Edward Goldobin, Dieter Koelle та Wolfgang Lang. "Ordered Bose Glass of Vortices in Superconducting YBa2Cu3O7−δ Thin Films with a Periodic Pin Lattice Created by Focused Helium Ion Irradiation". Nanomaterials 12, № 19 (6 жовтня 2022): 3491. http://dx.doi.org/10.3390/nano12193491.

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The defect-rich morphology of YBa2Cu3O7−δ (YBCO) thin films leads to a glass-like arrangement of Abrikosov vortices which causes the resistance to disappear in vanishing current densities. This vortex glass consists of entangled vortex lines and is identified by a characteristic scaling of the voltage–current isotherms. Randomly distributed columnar defects stratify the vortex lines and lead to a Bose glass. Here, we report on the observation of an ordered Bose glass in a YBCO thin film with a hexagonal array of columnar defects with 30 nm spacings. The periodic pinning landscape was engineered by a focused beam of 30 keV He+ ions in a helium-ion microscope.

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33

Kraszewski, Maciej, and Robert Bogdanowicz. "Laser Reflectance Interferometry System with a 405 Nm Laser Diode for in Situ Measurements of CVD Diamond Thickness." Metrology and Measurement Systems 20, no. 4 (December 1, 2013): 543–54. http://dx.doi.org/10.2478/mms-2013-0046.

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Abstract In situ monitoring of the thickness of thin diamond films during technological processes is important because it allows better control of deposition time and deeper understanding of deposition kinetics. One of the widely used techniques is laser reflectance interferometry (LRI) which enables non-contact measurement during CVD deposition. The authors have built a novel LRI system with a 405 nm laser diode which achieves better resolution compared to the systems based on He-Ne lasers, as reported so far. The system was used for in situ monitoring of thin, microcrystalline diamond films deposited on silicon substrate in PA-CVD processes. The thickness of each film was measured by stylus profilometry and spectral reflectance analysis as a reference. The system setup and interferometric signal processing are also presented for evaluating the system parameters, i.e. measurement uncertainty, resolution and the range of measurable film thickness.

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34

Jeong, Ho-young, Bok-young Lee, Young-jang Lee, Jung-il Lee, Myoung-su Yang, In-byeong Kang, Mallory Mativenga, and Jin Jang. "Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer." Applied Physics Letters 104, no. 2 (January 13, 2014): 022115. http://dx.doi.org/10.1063/1.4862320.

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35

Kim, Y. S., J. H. Lee, J. T. Lim, J. B. Park, and G. Y. Yeom. "Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar." Thin Solid Films 517, no. 14 (May 2009): 4065–69. http://dx.doi.org/10.1016/j.tsf.2009.01.137.

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36

Bryk, V. V., R. L. Vasilenko, A. V. Goncharov, T. K. Grogorova, A. G. Guglya, V. G. Kolobrodov, M. L. Litvinenko, et al. "Formation mechanism, structure and adsorption characteristics of microporous nanocrystalline thin-film (V, Ti)-N-He composites." Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques 5, no. 3 (June 2011): 566–74. http://dx.doi.org/10.1134/s1027451011060061.

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37

Ma, Yujie, Senhua Lin, Yizhi Qiu, Xinzhi Zheng, Mingyoung Yu, Bingxi Xiang, Fang Xu, Fei Lu, Cangtao Zhou, and Shuangchen Ruan. "Radiation effects on He+- and H+-implantation for ion slicing of rutile titanium dioxide thin film." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 533 (December 2022): 1–8. http://dx.doi.org/10.1016/j.nimb.2022.10.013.

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38

Kang, Seunghun, Woo-Sung Jang, Anna N. Morozovska, Owoong Kwon, Yeongrok Jin, Young-Hoon Kim, Hagyoul Bae, et al. "Highly enhanced ferroelectricity in HfO ₂ -based ferroelectric thin film by light ion bombardment." Science 376, no. 6594 (May 13, 2022): 731–38. http://dx.doi.org/10.1126/science.abk3195.

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Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO 2 )–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO 2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

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39

Chuang, Wei Ching, Ching Kong Chao, Wen Chung Chang, and Chi Ting Ho. "Fabrication of High Aspect Ratio Periodical Structure on Metal Using an Electroforming Process." Key Engineering Materials 364-366 (December 2007): 280–83. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.280.

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A procedure for fabricating a periodic structure on a metal at submicron order using holographic interferometry and molding processes is described. First, holographic interference using a He-Cd (325nm) laser is used to create the master of the periodic line structure on an i-line sub-micron positive photoresist film. A 200nm nickel thin film is then sputtered onto the positive photoresist. Pattern is then transferred to a metal using Nickel-Cobalt electroforming. Initial results show the technique can accurately control the grating’s period and depth.

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40

Kim, Nam-Hoon, Ju-Sun Park, and Woo-Sun Lee. "Effective Ag Doping by He-Ne Laser Exposure to Improve the Electrical and the Optical Properties of CdTe Thin Films for Heterostructured Thin Film Solar Cells." Journal of the Korean Physical Society 59, no. 3 (September 15, 2011): 2286–90. http://dx.doi.org/10.3938/jkps.59.2286.

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41

Khan, Saleem. "Investigation and Comparison of Optical Properties of Nickel Nanowires and Nickel Thin Film Using He-Ne Laser." International Journal on Organic Electronics 1, no. 2 (October 31, 2012): 15–22. http://dx.doi.org/10.5121/ijoe.2012.1203.

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42

Häberlen, Maik, Brian Murphy, Bernd Stritzker, and Jörg K. N. Lindner. "Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation." physica status solidi (c) 8, no. 3 (January 20, 2011): 944–47. http://dx.doi.org/10.1002/pssc.201000342.

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43

Saidani, Fatma, Dominic Rochefort, and Mohamed Mohamedi. "Carbon Monoxide Oxidation on Nanostructured Pt Thin Films Synthesized by Pulsed Laser Deposition: Insights into the Morphology Effects." Laser Chemistry 2010 (November 4, 2010): 1–7. http://dx.doi.org/10.1155/2010/143684.

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Nanostructured Pt thin film catalysts of various morphologies have been synthesized by pulsed laser deposition and studied towards enhancing their tolerance to CO poisoning, a reaction of critical issue to liquid fuel cells. It was discovered that Pt film deposited under 5 Torr of He background pressure showed the highest electroactive surface area and the lowest onset potential of CO oxidation demonstrating an enhancement of the CO poisoning resistance. The reason for such enhanced electrocatalytic activity is ascribed to the high roughness of Pt surface. This study further provides a methodology for the proper design of electrocatalysts that might be considered to be developed by the pulsed laser deposition technique.

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44

Castillo, Virgil Christian G., Ted Limpoco, and Erwin P. Enriquez. "Detection of Nitrogen in Layer-by-Layer Polymeric Films by Energy Dispersive X-Ray Spectroscopy." Key Engineering Materials 913 (March 18, 2022): 87–97. http://dx.doi.org/10.4028/p-9yin9g.

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Scanning electron microscopy - energy dispersive X-ray spectrometry (SEM-EDS) is an elemental analysis technique widely used in various fields to identify any element in the periodic table except H, He and Li. It can be a quick way to assess the response of sensing films before deposition on sensing devices. Sensing films are usually organic thin films, but quantitative analysis of light elements and thin films is not recommended for SEM-EDS due to its limitations. In this study, SEM-EDS analysis of nitrogen in layer-by-layer polymeric thin film was optimized. The films were analyzed containing nitrogen in the form of nitrate counterions or as part of the repeat unit of the polymer. The build-up of the layer was verified by thickness measurement using atomic force microscopy. The results show that the limit for nitrogen concentration detection using nitrates was 2% by mass. Below this concentration, nitrogen content had no quantifiable response in either calculated nitrogen concentration by standardless correction methods or intensity of N Kα X-ray line. However, by adding nitrate ions to a film that already contains nitrogen in its structure the concentration was raised to 13.75%. In the range of 9.63 to 13.75%, a nonlinear response was observed using calculated nitrogen concentration while the response was linear with intensity of N Kα.

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45

Et al., Jassim. "Synthesis, Characteristics and Study the Photoluminscience of the CdSxSe1-x Nanocrystaline Thin Film." Baghdad Science Journal 17, no. 1 (March 1, 2020): 0116. http://dx.doi.org/10.21123/bsj.2020.17.1.0116.

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The present work focuses on the changing of the structural characteristics of the grown materials through different material characterization methods. Semiconductor CdSxSe 1-x nano crystallines have been synthesized by chemical vapor depostion. (X- ray Diffraction; XRD), (Field Emission Scanning Electron Microscopy; FESEM), measured the characterization of Semiconductor CdSxSe1-x nano crystallines. The optical properties of semiconductor CdSxSe1-x nanocrystallines have been studied by the photoluminescence (PL) (He-Cd pulsed ultraviolet laser at 325nm excitation wavelength) at room temperature. The results showed the change rule of photoluminsence peak at different S/Se ratios according to the photoluminsence spectral analysis technology. The photuminscence peak can be continuously modulated between (500- 650) nm, so the tunable emission of the materials in the present work have novle applications in the area of bioscience and spectroscopy, etc.

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46

Camacho, C. S., P. F. P. Fichtner, F. C. Zawislak, and G. Feldmann. "Microstructure and He Bubble Effects on Al-Cu Thin Films." MRS Proceedings 792 (2003). http://dx.doi.org/10.1557/proc-792-r7.10.

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ABSTRACTThe effects of film morphology (mosaic- or bamboo-like grain structures) and of He bubbles on the redistribution of Cu, as well as on the formation of Al-Cu precipitates in 200 nm thick Al/SiO2 films similar to microelectronic device interconnects, are investigated using Rutherford backscattering spectrometry, elastic recoil detection analysis and transmission electron microscopy. As-deposited and pre-annealed Al films were implanted with Cu and/or He ions forming concentration profiles located 100 nm below the surface and with peak concentrations of about 3 at.%. It is shown that grain boundaries and/or He bubbles can affect the vacancy fluxes inside the grains and reduce or even inhibit the Cu redistribution as well as the nucleation and growth of θ and θ′ Al-Cu precipitates during post-implantation annealings at temperatures from 473 to 553 K. It is also shown that mosaic-like grain structures allow the control of grain size distribution within the 25 to 1500 nm size range, thus providing an additional microstructure engineering tool to improve device reliability against electromigration failures.

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47

Han, Sang-Myeon, Joong-Hyun Park, Hye-Jin Lee, Kwang-Sub Shin, and Min-Koo Han. "Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at 150°C." MRS Proceedings 862 (2005). http://dx.doi.org/10.1557/proc-862-a19.9.

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AbstractNanocrystalline silicon (nc-Si) films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. ICP power was 400W. The process gas was SiH4 diluted with He as well as H2. The flow rate of He, H2 and He/H2 mixture was varied from 20sccm to 60sccm and that of SiH4 was 3sccm. X-ray diffraction (XRD) patterns of the nc-Si films were measured. From the XRD results of nc-Si films deposited by ICP-CVD, the properties of Si film deposited under each condition were studied. As the dilution ratio increases and He/H2 mixture was used as a dilution gas, intensities of <111>and<220> peaks were increased and the incubation layer was thin. These results were explained in the point of role of H2 plasma and He plasma in the nc-Si deposition process. Our experimental results show that nc-Si film deposited by ICP-CVD may be suitable for an active layer of nc-Si TFTs.

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48

Simion, B. M., R. Ramesh, V. G. Keramidas, R. L. Pfeffer, G. Thomas, and E. Marinero. "Epitaxial Magnetic Garnet Thin Films and Heterostructures by Pulsed Laser Deposition." MRS Proceedings 341 (1994). http://dx.doi.org/10.1557/proc-341-65.

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AbstractEpitaxial yttrium-iron-garnet (YIG) films, bismuth-iron-garnet (BIG) films, and YIG/BIG heterostructures have been grown on [111] oriented single crystalline gadolinium-gallium-garnet (GGG) substrates by pulsed laser deposition (PLD), using a KrF excimer laser system. The films under study were grown over a range of temperatures from 600°C to 800°C and at 100 mTorr oxygen partial pressure. The effects of oxygen partial pressure during cooling on the structure, composition and magnetic properties of the films were investigated, employing X-ray diffraction, Rutherford back scattering spectroscopy coupled with He ion channeling, and vibration sample magnetometry. All specimens under study indicated that, independent of the film-substrate mismatch, the grown films were single crystalline in the [111] orientation. Preliminary studies on the effects of cooling oxygen partial pressure on the film structure indicate an increase in lattice distortion in the direction normal to the film surface with decreasing pressure. The magnetic properties of the films are comparable to the YIG bulk properties, and all films indicated in plane preferential magnetization, independent of cooling conditions.

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49

Catalan, Gustau, J. Marty Gregg, and Pavlo Zubko. "James Floyd Scott. 4 May 1942—6 April 2020." Biographical Memoirs of Fellows of the Royal Society, August 3, 2022. http://dx.doi.org/10.1098/rsbm.2021.0048.

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Jim Scott was a larger-than-life figure who performed pioneering academic and commercial research, mainly on Raman spectroscopy, ferroelectrics, and multiferroics. His career developed at the same time as methodological advances were being made in thin-film deposition and in growth and patterning of complex nanoscale materials. Such advances gave him the opportunity to lead the charge in the integration of ferroelectric oxide films with semiconductors for microwave antennae (predominantly for mobile phones), and in the creation and integration of thin-film capacitor structures for ferroelectric random access memory (FeRAM) chips. He made particularly noteworthy contributions in overcoming the fatigue problem, critical to FeRAM technology. He also played a central role in pushing nanoscale ferroelectrics beyond thin films and into three-dimensional geometries and was an important figure in the birth, and in the renaissance, of magnetoelectric multiferroics. Like many great scientists, Jim was adept at spotting connections between seemingly unconnected topics, establishing new conceptual frameworks and discovering new phenomena that were often received sceptically at first and then embraced by the community.

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50

Massimo, Maurice, Walter Varhue, Edward Adams, and Stephen Titcomb. "Chemical Beam Deposition of Y2O3 Thin Films with An Ecr." MRS Proceedings 249 (1991). http://dx.doi.org/10.1557/proc-249-233.

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ABSTRACTStoichiometric thin films of Y2O3 have been deposited on Si at substrate temperatures as low as 300 °C by plasma enhanced chemical vapor deposition using an electron cyclotron resonance (ECR) source. The yttrium source was an organo-metallic compound which was sublimated and fed with He carrier gas into the reactor chamber. Good capacitance-voltage characteristic curves were obtained for the dielectric film and a relative electrical permittivity of 9.9 was measured. This technique is a useful means of depositing oxide ceramic films at low substrate temperatures.

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