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Статті в журналах з теми "He+/Si"

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Автор: Grafiati

Опубліковано: 10 грудня 2022

Оновлено: 29 січня 2023

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1

Pivac, B., B. Rakvin, R. Tonini, F. Corni, and G. Ottaviani. "EPR study of He-implanted Si." Materials Science and Engineering: B 73, no. 1-3 (April 2000): 60–63. http://dx.doi.org/10.1016/s0921-5107(99)00434-1.

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2

Buca, D., S. F. Feste, B. Holländer, S. Mantl, R. Loo, M. Caymax, R. Carius, and H. Schaefer. "Growth of strained Si on He ion implanted Si/SiGe heterostructures." Solid-State Electronics 50, no. 1 (January 2006): 32–37. http://dx.doi.org/10.1016/j.sse.2005.10.042.

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3

Kilpeläinen, S., K. Kuitunen, J. Slotte, F. Tuomisto, E. Bruno, S. Mirabella, and F. Priolo. "He implantation induced nanovoids in crystalline Si." Materials Science and Engineering: B 159-160 (March 2009): 164–67. http://dx.doi.org/10.1016/j.mseb.2008.12.010.

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4

Alatalo, M., M. J. Puska, and R. M. Nieminen. "First-principles study of He in Si." Physical Review B 46, no. 19 (November 15, 1992): 12806–9. http://dx.doi.org/10.1103/physrevb.46.12806.

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5

Bruno, E., S. Mirabella, E. Napolitani, F. Giannazzo, V. Raineri, and F. Priolo. "He implantation in Si for B diffusion control." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 257, no. 1-2 (April 2007): 181–85. http://dx.doi.org/10.1016/j.nimb.2007.01.034.

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6

Liu, Changlong, E. Ntsoenzok, R. Delamare, D. Alquier, G. Regula, L. Vincent, C. Filadelfo, and A. Claverie. "The evolution of cavities in Si co-implanted with Si and He ions1." Materials Science and Engineering: B 102, no. 1-3 (September 2003): 75–79. http://dx.doi.org/10.1016/s0921-5107(02)00632-3.

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7

Zhang, X. D., C. L. Liu, M. K. Li, Y. J. Gao, and D. C. Zhang. "Creation of Si nanocrystals from SiO2/Si by He and H ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 276 (April 2012): 25–29. http://dx.doi.org/10.1016/j.nimb.2012.01.025.

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8

Kilpeläinen, S., K. Kuitunen, F. Tuomisto, J. Slotte, E. Bruno, S. Mirabella, and F. Priolo. "Vacancy engineering by He induced nanovoids in crystalline Si." Semiconductor Science and Technology 24, no. 1 (December 5, 2008): 015005. http://dx.doi.org/10.1088/0268-1242/24/1/015005.

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9

Azevedo, G. de M., J. R. A. Kaschny, M. Behar, P. L. Grande, Ch Klatt, and S. Kalbitzer. "Charge equilibration of He ions in the Si channel." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 161-163 (March 2000): 96–100. http://dx.doi.org/10.1016/s0168-583x(99)00677-1.

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10

da Silva, D. L., P. F. P. Fichtner, M. Behar, A. Peeva, R. Koegler, and W. Skorupa. "Implantation temperature dependence of He bubble formation in Si." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190, no. 1-4 (May 2002): 756–60. http://dx.doi.org/10.1016/s0168-583x(01)01260-5.

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11

Sakai, A., M. J. Cardillo, and D. R. Hamann. "He-Si(100) potential: Charge superposition and model structures." Physical Review B 33, no. 8 (April 15, 1986): 5774–81. http://dx.doi.org/10.1103/physrevb.33.5774.

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12

Brown, R. A., J. C. McCallum, and J. S. Williams. "2 MeV He microbeam damage in Si and GaAs." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 54, no. 1-3 (March 1991): 197–203. http://dx.doi.org/10.1016/0168-583x(91)95513-d.

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13

Follstaedt, D. M., S. M. Myers, G. A. Petersen, and J. W. Medernach. "Cavity formation and impurity gettering in He-implanted Si." Journal of Electronic Materials 25, no. 1 (January 1996): 157–64. http://dx.doi.org/10.1007/bf02666190.

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14

Briquet, M., S. Hubrig, M. Schöller, and P. De Cat. "Discovery of magnetic fields in three He variable Bp stars with He and Si spots." Astronomische Nachrichten 328, no. 1 (January 2007): 41–45. http://dx.doi.org/10.1002/asna.200610702.

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15

Tell, B., K. F. Brown Goebeler, J. E. Cunningham, T. H. Chiu, and W. Y. Jan. "Enhanced diffusion of Si due to He ion implantation in Si‐delta doped GaAs layers." Applied Physics Letters 56, no. 26 (June 25, 1990): 2657–59. http://dx.doi.org/10.1063/1.102844.

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16

Xu, M., G. Regula, R. Daineche, E. Oliviero, B. Hakim, E. Ntsoenzok, and B. Pichaud. "Effect of Si and He implantation in the formation of ultra shallow junctions in Si." Thin Solid Films 518, no. 9 (February 2010): 2354–56. http://dx.doi.org/10.1016/j.tsf.2009.09.153.

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17

Raineri, V., S. Coffa, M. Saggio, F. Frisina, and E. Rimini. "Radiation damage–He interaction in He implanted Si during bubble formation and their evolution in voids." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 147, no. 1-4 (January 1999): 292–97. http://dx.doi.org/10.1016/s0168-583x(98)00609-0.

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18

Gnidenko, A. A., V. G. Zavodinsky, A. Misiuk, and J. Bak-Misiuk. "First-Principles Calculation of He-H Interaction in c-Si." Acta Physica Polonica A 109, no. 3 (March 2006): 353–57. http://dx.doi.org/10.12693/aphyspola.109.353.

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19

Azevedo, G. de M., J. R. A. Kaschny, M. Behar, P. L. Grande, Ch Klatt, and S. Kalbitzer. "Charge equilibration of energetic He ions in the Si channel." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 168, no. 3 (July 2000): 321–28. http://dx.doi.org/10.1016/s0168-583x(99)01096-4.

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20

Matos, L. G., R. M. S. dos Reis, and R. L. Maltez. "Ne–He bubble formation in co-implanted Si(111) substrates." Thin Solid Films 548 (December 2013): 465–69. http://dx.doi.org/10.1016/j.tsf.2013.09.076.

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21

Bernardi, F., L. L. Araújo, M. Behar, and J. F. Dias. "Energy-dependent He flux redistribution through the Si〈100〉 channel." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 249, no. 1-2 (August 2006): 69–72. http://dx.doi.org/10.1016/j.nimb.2006.03.081.

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22

Merkel, D. G., Z. E. Horváth, D. E. Szőcs, R. Kovács-Mezei, G. Gy Kertész, and L. Bottyán. "Stress relaxation in Fe/Si neutron supermirrors by He+ irradiation." Physica B: Condensed Matter 406, no. 17 (September 2011): 3238–42. http://dx.doi.org/10.1016/j.physb.2011.05.032.

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23

Briquet, M., C. Aerts, T. Lüftinger, P. De Cat, N. E. Piskunov, and R. Scuflaire. "He and Si surface inhomogeneities of four Bp variable stars." Astronomy & Astrophysics 413, no. 1 (December 17, 2003): 273–83. http://dx.doi.org/10.1051/0004-6361:20031450.

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24

Riyanti, Menul, and Dodi Setianto. "THE DIGITAL COMIC DEVELOPMENT IN INDONESIA (A CASE STUDY ABOUT THE STORY OF “SI PITUNG”)." International Journal of Research -GRANTHAALAYAH 6, no. 1 (January 31, 2018): 107–17. http://dx.doi.org/10.29121/granthaalayah.v6.i1.2018.1599.

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Анотація:

Indonesia is an archipelago. It is one of the biggest archipelagos in the world. Indonesia it is 14th. Indonesia is devided by territories and each territory has its own culture. Indonesia has 245. 000.000 people as the inhabitant. The capital city of Indonesia is Jakarta and the original culture of Jakarta is Betawi. Betawi as the original culture of Jakarta has a lot of stories and one of the popular stories is “Si Pitung”. The story of “Si Pitung” is being told very often by Indonesian community and becomes a legend and an inheritance from Betawi or Indonesia. Si Pitung” sometimes is beingtold as a ballad, a poem or a folk thetare. Koesasi(1992), “Si Pitung” is identified as a prominent figure from Betawi who is very humble. He is a Muslim. He is very patient and he likes to help people. He is also a person who works very hard. He is a model of social justice. Based on the folktale from Betawi culture, the authors would like to introduce the story of “Si Pitung” to be well known by people from other cities in Indonesia. The authors also hope that children and teenagers from Indonesia know the story of “Si Pitung” as he is one of the hero in Indonesia. The digital comic of “Si Pitung” can be downloaded through electronic media such as mobile phone, PC Tablet or other gadgets easily.

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25

Park, Kyeong Hwan, Sosuke Kondo, Yutai Katoh та Akira Kohyama. "Mechanical Properties of β-SiC After Si- and Dual Si + He-Ion Irradiation at Various Temperatures". Fusion Science and Technology 44, № 2 (вересень 2003): 455–59. http://dx.doi.org/10.13182/fst03-a377.

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26

Buca, D., R. A. Minamisawa, H. Trinkaus, B. Holländer, N. D. Nguyen, R. Loo та S. Mantl. "Relaxation of strained pseudomorphic SixGe1−x layers on He-implanted Si/δ-Si:C/Si(100) substrates". Applied Physics Letters 95, № 14 (5 жовтня 2009): 144103. http://dx.doi.org/10.1063/1.3240409.

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27

Соболев, Ю. Г., Ю. Э. Пенионжкевич, В. А. Маслов, М. А. Науменко, В. В. Самарин, И. Сивачек та С. С. Стукалов. "Измерение полных сечений реакций при столкновениях 6, 8 He + 28 Si и 9 Li + 28 Si". Известия Российской академии наук. Серия физическая 83, № 4 (2019): 451–59. http://dx.doi.org/10.1134/s0367676519040264.

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28

Bureš, D., L. Bartoň, R. Zahrádková, V. Teslík, and M. Krejčová. "Chemical composition, sensory characteristics, and fatty acid profile of muscle from Aberdeen Angus, Charolais, Simmental, and Hereford bulls." Czech Journal of Animal Science 51, No. 7 (December 5, 2011): 279–84. http://dx.doi.org/10.17221/3940-cjas.

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Анотація:

Aberdeen Angus (AA), Charolais (CH), Simmental (SI), and Hereford (HE) bulls were used in two fattening experiments with the objective of determining breed differences in chemical composition, sensory characteristics, and fatty acid profile of m. longissimus thoracis et lumborum. The target slaughter live weights were set at 550 kg for earlier maturing breeds AA and HE and 630 kg for later maturing breeds CH and SI. Intramuscular lipid contents were higher in AA and HE (P < 0.05) than in CH and SI, but cholesterol contents were similar among the breed groups. The highest content of dry matter was found in HE (P < 0.05), while AA had the lowest protein content (P < 0.001). Meat from AA generally received the highest scores for different sensory characteristics (odour, flavour, texture, and juiciness). Concentrations of stearic acid (C18:0) in total muscle lipids were lower in SI than in CH (P < 0.05), while total saturated fatty acids were lower in SI compared to CH (P < 0.001) and AA (P < 0.05). CH had less oleic acid (C18:1-n9c) and total monounsaturated fatty acids than AA (P < 0.05), SI and HE (P < 0.01). Concentrations of linolenic acid (C18:3-n3) were highest in AA (P < 0.01).

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29

Bruno, E., S. Mirabella, F. Priolo, K. Kuitunen, F. Tuomisto, J. Slotte, F. Giannazzo, C. Bongiorno, V. Raineri, and E. Napolitani. "He implantation to control B diffusion in crystalline and preamorphized Si." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26, no. 1 (2008): 386. http://dx.doi.org/10.1116/1.2816927.

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30

Reboh, S., A. A. de Mattos, J. F. Barbot, A. Declemy, M. F. Beaufort, R. M. Papaléo, C. P. Bergmann, and P. F. P. Fichtner. "Localized exfoliation versus delamination in H and He coimplanted (001) Si." Journal of Applied Physics 105, no. 9 (May 2009): 093528. http://dx.doi.org/10.1063/1.3116738.

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31

Handke, R., R. Krzikalla, and Gud Lippert. "Anisotropic plasma etching of P-doped poly-Si with CCl4/He." Crystal Research and Technology 23, no. 9 (September 1988): 1085–91. http://dx.doi.org/10.1002/crat.2170230906.

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32

Tuttle, William D., Rebecca L. Thorington, Larry A. Viehland, and Timothy G. Wright. "Theoretical study of Si+(2PJ)–RG complexes and transport of Si+(2PJ) in RG (RG = He–Ar)." Molecular Physics 115, no. 4 (January 12, 2017): 437–46. http://dx.doi.org/10.1080/00268976.2016.1269965.

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33

Huang, Rui, Tian Lan, Chong Li, Jing Li, and Zhiyong Wang. "Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers." Crystals 9, no. 12 (December 12, 2019): 671. http://dx.doi.org/10.3390/cryst9120671.

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Анотація:

In this paper, effects of He+ and H+ co-implantation with high implantation energy on surface blisters and craters at different annealing conditions are systematically investigated. Surface morphology as well as defect microstructure are observed and analyzed by various approaches, such as scanning electron microscopy (SEM), optical microscopy (OM), atomic force microscopy (AFM), and Raman spectroscopy. It is found that after 500 °C annealing and above for 1 h, surface blisters and exfoliation are observed for Si and SiO2-on-Si wafers except for the samples implanted with only He+ ions. AFM images reveal that the heights of blisters in Si and SiO2-on-Si wafers are 432 nm and 397 nm respectively and the thickness of transfer layer is at the depth of about 1.4 μm, which is consistent with the projected range of He+ and H+ ions. Raman spectroscopy demonstrates that higher annealing temperature can lead to a stronger intensity of the VH2 peak. Under the same implantation parameters, surface morphology of Si and SiO2-on-Si wafers is different after annealing process. This phenomenon is discussed in detail.

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34

Zhang, Jian-Rong, Wei-Ming Liu, Li-Dong Ma, Qion Yang, Yan-Wei Chen, Yang-Yang Yang, Ya-Feng Shu, Ke-Wei Tao, Lei Yang, and Wen-Shan Duan. "First-principles study of the vacancy and layer defects in Ti3SiC2." International Journal of Modern Physics B 34, no. 20 (August 10, 2020): 2050198. http://dx.doi.org/10.1142/s0217979220501982.

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Анотація:

First-principles calculations are performed to study the effects of defect on the structure and electronic properties of Ti3SiC2. The calculations show that the formation energy of Si vacancy is minimal compared with the Ti or C vacancies in Ti3SiC2. The defects of Si layer also can be formed under high-temperature or irradiation environments. The C-layers or Ti-layers are almost impossible to form. If the Si vacancy or Si layers are formed, they prefer to be substituted by the O and H atoms to form the MXene structure, and the unit cell of Ti3SiC2 lattice constant decreases in c-direction. However, it has quite slight effect on electronic properties of Ti3SiC2. The He impurities are almost impossible to occupy the Si vacancies, because the formation energy are 50.860 eV for one layer of Si atoms substituted by the He atoms. This type of defect leads to the lattice constant of Ti3SiC2 in c-direction increasing considerably. Therefore, Ti3SiC2 is a suitable candidate for nuclear materials because of the high-formation energies of He impurities under irradiation environment.

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35

López Subia, Beimar. "Entrevista a Beimar López Subia." Journal of Latin American Sciences and Culture 4, no. 5 (June 30, 2022): 62–64. http://dx.doi.org/10.52428/27888991.v4i5.275.

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Анотація:

Siempre he avalado que en la matemática, todo es posible, y si no existe matemática puede crearse. Me he dedicado a investigar la matemática desde siempre, he dictado cursos para enseñar que la matemática no es difícil; hasta que un día,un estudiante me preguntó si existía una fórmula para encontrar la sucesión de números primos; y en ese momento no tenía la respuesta. Sin embargo, al investigar a profundidad me he dado cuenta que lamatemática estaba incompleta; faltaba una fórmula que encuentre números primos de manera sencilla.

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36

Stoeckl, C., M. J. Bonino, C. Mileham, S. P. Regan, W. Theobald, T. Ebert, and S. Sander. "Optimization of a short-pulse-driven Si He soft x-ray backlighter." High Energy Density Physics 41 (September 2021): 100973. http://dx.doi.org/10.1016/j.hedp.2022.100973.

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37

Chen, Jihong, Liping Guo, Congxiao Liu, Fengfeng Luo, Tiecheng Li, Zhongcheng Zheng, Shuoxue Jin, and Zheng Yang. "Enhancement of room temperature ferromagnetism in Mn-implanted Si by He implantation." Applied Physics Letters 101, no. 13 (September 24, 2012): 132413. http://dx.doi.org/10.1063/1.4754712.

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38

Li, B. S., C. H. Zhang, and Y. T. Yang. "The effects of Xe irradiation on He and H co-implanted Si." Radiation Effects and Defects in Solids 167, no. 3 (March 2012): 212–19. http://dx.doi.org/10.1080/10420150.2011.629319.

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39

Böttcher, Artur, Ruth Schwaiger, Tobias M. Pazdera, Daniela Exner, Jakob Hauns, Dmitry Strelnikov, Sergei Lebedkin, et al. "Nanoscale patterning at the Si/SiO2/graphene interface by focused He+ beam." Nanotechnology 31, no. 50 (October 6, 2020): 505302. http://dx.doi.org/10.1088/1361-6528/abb5cf.

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40

Bruno, E., S. Mirabella, F. Priolo, E. Napolitani, C. Bongiorno, and V. Raineri. "He induced nanovoids for point-defect engineering in B-implanted crystalline Si." Journal of Applied Physics 101, no. 2 (January 15, 2007): 023515. http://dx.doi.org/10.1063/1.2427101.

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41

Reboh, S., J. F. Barbot, M. Vallet, M. F. Beaufort, F. Rieutord, F. Mazen, N. Cherkashin, P. F. P. Fichtner, and J. Grilhé. "Nanoscale organization by elastic interactions between H and He platelets in Si." Journal of Applied Physics 114, no. 7 (August 21, 2013): 073517. http://dx.doi.org/10.1063/1.4818812.

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42

Ramiere, Aymeric, Jay Amrit, and Sebastian Volz. "Pressure dependence of the thermal contact resistance at the Si/He interface." Journal of Physics: Conference Series 395 (November 26, 2012): 012110. http://dx.doi.org/10.1088/1742-6596/395/1/012110.

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43

Ito, T., I. L. Bolotin, B. N. Makarenko, and J. W. Rabalais. "Blocking map of He+ scattered from a Si(001)-(2×1) surface." Surface Science 565, no. 2-3 (September 2004): 163–72. http://dx.doi.org/10.1016/j.susc.2004.06.211.

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44

Azevedo, G. de M., J. R. A. Kaschny, J. F. Dias, P. L. Grande, M. Behar, Ch Klatt, and S. Kalbitzer. "Charge equilibration process for channeled He ions along the Si〈100〉 direction." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148, no. 1-4 (January 1999): 168–71. http://dx.doi.org/10.1016/s0168-583x(98)00801-5.

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45

Yamamoto, Y., A. Ikeda, T. Yoneda, K. Kajiyama, and Y. Kido. "Impact-parameter dependent stopping powers for MeV He ions in Si crystals." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 153, no. 1-4 (June 1999): 10–14. http://dx.doi.org/10.1016/s0168-583x(98)00982-3.

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46

Wang, Feng-Xiang, Feng Chen, Xue-Lin Wang, Qing-Ming Lu, Ke-Ming Wang, Ding-Yu Shen, Hong-Ji Ma, and Rui Nie. "Fabrication of optical waveguides in KTiOAsO4 by He or Si ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 215, no. 3-4 (February 2004): 389–93. http://dx.doi.org/10.1016/j.nimb.2003.09.011.

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