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Автор: Grafiati

Опубліковано: 7 вересня 2023

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1

Baldi, A., V. Palmisano, M. Gonzalez-Silveira, Y. Pivak, M. Slaman, H. Schreuders, B. Dam, and R. Griessen. "Quasifree Mg–H thin films." Applied Physics Letters 95, no. 7 (August 17, 2009): 071903. http://dx.doi.org/10.1063/1.3210791.

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2

Krist, Th, M. Brière, and L. Cser. "H in Ti thin films." Thin Solid Films 228, no. 1-2 (May 1993): 141–44. http://dx.doi.org/10.1016/0040-6090(93)90583-b.

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3

Burlaka, Vladimir, Kai Nörthemann, and Astrid Pundt. "Nb-H Thin Films: On Phase Transformation Kinetics." Defect and Diffusion Forum 371 (February 2017): 160–65. http://dx.doi.org/10.4028/www.scientific.net/ddf.371.160.

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Анотація:

It was recently shown that phases forming in thin films undergo a coherency state change depending on the film thickness. For Nb-H thin films, the coherency state was reported to change at about 38 nm. In this study the impact of the coherency state on the phase transformation kinetics is investigated for Nb films of two different film thicknesses (25 nm and 80 nm), below and above the state change thickness. The phase transformation in thin metal-hydrogen films can be studied by surface topography analyses via scanning tunneling microscopy (STM) because of the strong local lattice expansion of the hydride precipitates. STM on Nb-H reveals fast phase transformation kinetics for the 25 nm Nb-film, and much slower kinetics for the 80 nm film. This is suggested to be related to the change in the coherency between the Nb-matrix and the hydride precipitates.

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4

Borisov, A. G., and H. Winter. "Formation of H− on thin aluminum films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 115, no. 1-4 (July 1996): 142–45. http://dx.doi.org/10.1016/0168-583x(96)01518-2.

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5

Glesener, J. W., J. M. Anthony, and A. Cunningham. "Photoluminescence investigation of a-C: H thin films." Diamond and Related Materials 2, no. 5-7 (April 1993): 670–72. http://dx.doi.org/10.1016/0925-9635(93)90201-c.

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6

Mahdjoubi, L., N. Hadj-Zoubir, and M. Benmalek. "Photoelectrical properties of H+ implanted CdS thin films." Thin Solid Films 156, no. 2 (January 1988): L21—L26. http://dx.doi.org/10.1016/0040-6090(88)90332-x.

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7

Ebel, M. F., H. Ebel, M. Mantler, J. Wernisch, R. Svagera, M. Gazicki, F. Olcaytug, J. Schalko, F. Kohl, and A. Jachimowicz. "X-ray analysis of thin GexCyOz: H films." X-Ray Spectrometry 21, no. 3 (May 1992): 137–42. http://dx.doi.org/10.1002/xrs.1300210308.

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8

Zhou, Rui, Zhaoyang Zhao, Juanxia Wu, and Liming Xie. "Chemical Vapor Deposition of IrTe2 Thin Films." Crystals 10, no. 7 (July 3, 2020): 575. http://dx.doi.org/10.3390/cryst10070575.

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Two-dimensional (2D) IrTe2 has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe2 films using different Ir precursors on different substrates. The Ir(acac)3 precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe2 films. Temperature-dependent Raman spectroscopic characterization has shown the q1/8 phase to HT phase at ~250 K in the as-grown IrTe2 films on h-BN. Electrical measurement has shown the HT phase to q1/5 phase at around 220 K.

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9

Chen, Yuan-Tsung. "Nanoindentation and Adhesion Properties of Ta Thin Films." Journal of Nanomaterials 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/154179.

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Ta films were sputtered onto a glass substrate with thicknesses from 500 Å to 1500 Å under the following conditions: (a) as-deposited films were maintained at room temperature (RT), (b) films were postannealed atTA=150°C for 1 h, and (c) films were postannealed atTA=250°C for 1 h. X-ray diffraction (XRD) results revealed that the Ta films had a body-centered cubic (BCC) structure. Postannealing conditions and thicker Ta films exhibited a stronger Ta (110) crystallization than as-deposited and thinner films. The nanoindention results revealed that Ta thin films are sensitive to mean grain size, including a valuable hardness (H) and Young’s modulus (E). High nanomechanical properties of as-deposited and thinner films can be investigated by grain refinement, which is consistent with the Hall-Petch effect. The surface energy of as-deposited Ta films was higher than that in postannealing treatments. The adhesion of as-deposited Ta films was stronger than postannealing treatments because of crystalline degree effect. The maximalHandEand the optimal adhesion of an as-deposited 500-Å-thick Ta film were 15.6 GPa, 180 GPa, and 51.56 mJ/mm2, respectively, suggesting that a 500-Å-thick Ta thin film can be used in seed and protective layer applications.

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10

Misra, A., H. Kung, T. E. Mitchell, and M. Nastasi. "Residual stresses in polycrystalline Cu/Cr multilayered thin films." Journal of Materials Research 15, no. 3 (March 2000): 756–63. http://dx.doi.org/10.1557/jmr.2000.0109.

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Анотація:

Residual stresses in sputter-deposited Cu/Cr multilayers and Cu and Cr single-layered polycrystalline thin films were evaluated by the substrate curvature method. The stresses in the multilayers were found to be tensile and to increase in magnitude with increasing layer thickness (h) to a peak value of ∼1 GPa for h = 50 nm. For h > 50 nm, the residual stress decreased with increasing h but remained tensile. The same trends were observed in single-layered Cu and Cr thin films, except that the maximum stress in Cu films is 1 order of magnitude lower than that in Cr. Transmission electron microscopy was used to study the microstructural evolution as a function of layer thickness. The evolution of tensile growth stresses in Cr films is explained by island coalescence and subsequent growth with increasing thickness. Estimates of the Cr film yield strength indicated that, for h ≥ 50 nm, the residual stress may be limited by the yield strength. Substrate curvature measurements on bilayer films of different thicknesses were used to demonstrate that a non-negligible contribution to the total stress in the multilayers arises from the interface stress.

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11

Wu, H. Z., T. C. Chou, A. Mishra, D. R. Anderson, J. K. Lampert, and S. C. Gujrathi. "Characterization of titanium nitride thin films." Thin Solid Films 191, no. 1 (October 1990): 55–67. http://dx.doi.org/10.1016/0040-6090(90)90274-h.

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12

Xiaoli, Xiang, Hou Lisong, and Gan Fuxi. "Sol-gel derived BaTiO3 thin films." Vacuum 42, no. 16 (1991): 1057–58. http://dx.doi.org/10.1016/0042-207x(91)91324-h.

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13

Vretenar, Petar. "Mechanical stresses in oxide thin films." Vacuum 43, no. 5-7 (May 1992): 727–29. http://dx.doi.org/10.1016/0042-207x(92)90119-h.

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14

Faria, I. C., R. Torresi, and A. Gorenstein. "Electrochemical intercalation in NiOx thin films." Electrochimica Acta 38, no. 18 (December 1993): 2765–71. http://dx.doi.org/10.1016/0013-4686(93)85096-h.

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15

HASANAIN, S. K., and UZMA KHALIQUE. "FLUX DYNAMICS IN YBCO THIN FILMS." Modern Physics Letters B 14, no. 27n28 (December 10, 2000): 949–59. http://dx.doi.org/10.1142/s0217984900001099.

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Magnetic measurements are reported on YBCO thin films (d<500 nm ) in the perpendicular geometry, H‖c. By analyzing the sweep rate dependence of the magnetization for temperatures 35 ≤ T ≤ 77 K and H≤10 kOe , we find that the moment has a power law dependence on the sweep rate. This dependence is indicative of power law E(J) characteristics for these thin films and from this a logarithmic current dependence of the activation potential U(J) is inferred. We find that our magnetic relaxation measurements are also consistent with the logarithmic U(J) dependence obtained from the sweep rate measurements. Activation barriers for flux creep are determined for various temperatures and their field dependence is discussed.

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16

Wang, Xiao-Dong, K. W. Hipps, J. T. Dickinso, and Ursula Mazur. "Amorphous or nanocrystalline AlN thin films formed from AlN: H." Journal of Materials Research 9, no. 6 (June 1994): 1449–55. http://dx.doi.org/10.1557/jmr.1994.1449.

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Анотація:

This work describes the formation of stoichiometric AlN films by single ion-beam sputtering of Al, using an ionized N2 (75%) + H2 (25%) mixture, onto substrates heated to 200 °C or above. The role of substrate temperature on film composition and properties is followed in the substrate temperature range between ambient and 250 °C. Infrared spectra of freshly prepared and 2 month old (aged in air) films demonstrate that substrate heating significantly affects the chemical nature of the resulting films. SEM and STM data, combined with IR and UV-visible spectral results, indicate that films formed at a substrate temperature of ≥200 °C are very smooth and highly resistant to attack by atmospheric gases. X-ray diffraction data show no diffraction peaks, indicating that the film is either amorphous or crystalline on a scale of less than 4 nm.

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17

Song, Lin, Volker Körstgens, David Magerl, Bo Su, Thomas Fröschl, Nicola Hüsing, Sigrid Bernstorff, and Peter Müller-Buschbaum. "Low-Temperature Fabrication of Mesoporous Titania Thin Films." MRS Advances 2, no. 43 (2017): 2315–25. http://dx.doi.org/10.1557/adv.2017.406.

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ABSTRACTMesoporous titania films are prepared via the polymer-template assisted sol-gel synthesis at low temperatures, using the titania precursor ethylene glycol-modified titanate (EGMT) and the diblock copolymer polystyrene-block-polyethyleneoxide (PS-b-PEO). UV-irradiation is chosen as a low temperature technique to remove the polymer template and thereby to obtain titania sponge-like nanostructures at processing temperatures below 100 °C. After different UV irradiation times, ranging for 0 h to 24 h, the surface and inner morphologies of the titania films are studied with scanning electron microscopy (SEM) and grazing incidence small-angle x-ray scattering (GISAXS), respectively. The evolution of the band gap energies is investigated using ultraviolet/visible (UV/Vis) spectroscopy. The findings reveal that 12 h UV-treatment is sufficient to remove the polymer template from the titania/PS-b-PEO composite films with a thickness of 80 nm, and the determined bad gap energies indicate an incomplete crystallization of the titania nanostructures.

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18

Wang, Sheng Zhao, Ying Peng Yin, Chun Juan Nan та Ming Ji Shi. "Influence of Substrate on μc-Si: H Thin Films". Key Engineering Materials 538 (січень 2013): 169–72. http://dx.doi.org/10.4028/www.scientific.net/kem.538.169.

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Анотація:

By PECVD deposition technology, we mainly investigated the influence of substrate on intrinsic amorphous/microcrystalline silicon thin film prepared at 300°C. We study the crystallization ratio, grain size of the silicon thin film specially. The results reveal that the crystallization ratio and grain size of the silicon thin film changed along with different substrates. The silicon thin film crystallization ratio and grain size changed sharply when using glass and stainless steel substrate. On this work we think ideal μc-Si:H can be obtained by using glass as substrate and in the suitable experimental conditions.

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19

Han, Hyeon, Donghoon Kim, Sangmin Chae, Jucheol Park, Sang Yeol Nam, Mingi Choi, Kijung Yong, Hyo Jung Kim, Junwoo Son, and Hyun Myung Jang. "Switchable ferroelectric photovoltaic effects in epitaxial h-RFeO3 thin films." Nanoscale 10, no. 27 (2018): 13261–69. http://dx.doi.org/10.1039/c7nr08666k.

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20

Scarminio, J., W. Estrada, A. Andersson, A. Gorenstein, and F. Decker. "H Insertion and Electrochromism in NiO x Thin Films." Journal of The Electrochemical Society 139, no. 5 (May 1, 1992): 1236–39. http://dx.doi.org/10.1149/1.2069389.

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21

Borsa, D. M., A. Baldi, M. Pasturel, H. Schreuders, B. Dam, R. Griessen, P. Vermeulen, and P. H. L. Notten. "Mg–Ti–H thin films for smart solar collectors." Applied Physics Letters 88, no. 24 (June 12, 2006): 241910. http://dx.doi.org/10.1063/1.2212287.

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22

Hawley, M. E., G. W. Brown, P. C. Yashar, and C. Kwon. "H-dependent magnetic domain structures in La0.67Sr0.33MnO3 thin films." Journal of Crystal Growth 211, no. 1-4 (April 2000): 86–92. http://dx.doi.org/10.1016/s0022-0248(99)00849-0.

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23

Bao, Shanhu, Yasusei Yamada, Kazuki Tajima, Ping Jin, Masahisa Okada, and Kazuki Yoshimura. "Switchable mirror based on Mg–Zr–H thin films." Journal of Alloys and Compounds 513 (February 2012): 495–98. http://dx.doi.org/10.1016/j.jallcom.2011.10.098.

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24

Baldi, A., D. M. Borsa, H. Schreuders, J. H. Rector, T. Atmakidis, M. Bakker, H. A. Zondag, W. G. J. van Helden, B. Dam, and R. Griessen. "Mg–Ti–H thin films as switchable solar absorbers." International Journal of Hydrogen Energy 33, no. 12 (June 2008): 3188–92. http://dx.doi.org/10.1016/j.ijhydene.2008.01.026.

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25

Herrero, J., and M. T. Gutiérrez. "Photoelectrochemical measurements of amorphous silicon thin films." Electrochimica Acta 36, no. 5-6 (January 1991): 915–20. http://dx.doi.org/10.1016/0013-4686(91)85294-h.

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26

Robinet, S., M. Salvi, and C. Clarisse. "Ionic implantation in scandium diphthalocyanine thin films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 53, no. 1 (January 1991): 46–52. http://dx.doi.org/10.1016/0168-583x(91)95443-h.

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27

Gibson, U. J. "Low energy ion modification of thin films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74, no. 1-2 (April 1993): 322–25. http://dx.doi.org/10.1016/0168-583x(93)95069-h.

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28

Wingert, D., and D. Stauffer. "Monte Carlo simulation of thin Ising films." Physica A: Statistical Mechanics and its Applications 219, no. 1-2 (September 1995): 135–40. http://dx.doi.org/10.1016/0378-4371(95)00199-h.

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29

Dhumure, S. S., and C. D. Lokhande. "Solution growth of silver sulphide thin films." Materials Chemistry and Physics 27, no. 3 (March 1991): 321–24. http://dx.doi.org/10.1016/0254-0584(91)90128-h.

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30

Rosaiah, P., and O. M. Hussain. "Microstructural and Electrochemical Properties of rf-Sputtered LiFeO2 Thin Films." Journal of Nanoscience 2014 (March 13, 2014): 1–6. http://dx.doi.org/10.1155/2014/173845.

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Анотація:

Lithium iron oxide (LiFeO2) thin films have been deposited by rf-magnetron sputtering technique and microstructural and electrochemical properties were studied. The films deposited at a substrate temperature 250°C with subsequent post annealing at 500°C for 4 h exhibited cubic rock-salt structure with Fm3m space group. The films exhibited well-defined oxidation and reduction peaks suggesting complete reversibility upon cycling. The as-deposited films exhibited an initial discharge capacity 15 μAh/cm2·μm, whereas the films post annealed at 500°C for 4 h in controlled oxygen environment exhibited 31 μAh/cm2·μm.

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31

Hu, Chih-Wei, Yasusei Yamada, and Kazuki Yoshimura. "Fabrication of nickel oxyhydroxide/palladium (NiOOH/Pd) thin films for gasochromic application." Journal of Materials Chemistry C 4, no. 23 (2016): 5390–97. http://dx.doi.org/10.1039/c6tc01541g.

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Анотація:

NiOOH/Pd thin films were prepared by a chemical bath deposition (CBD) method, electrochemical CV treatment and sputtering. The novel gasochromic phenomenon of NiOOH/Pd thin films is presented in (a) UV-vis spectra before and after exposure to H₂, and (b) the images of thin films before (left) and after (right) exposure to H₂ are shown.

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32

Hellgren, Niklas, Nian Lin, Esteban Broitman, Virginie Serin, Stefano E. Grillo, Ray Twesten, Ivan Petrov, Christian Colliex, Lars Hultman, and Jan-Eric Sundgren. "Thermal stability of carbon nitride thin films." Journal of Materials Research 16, no. 11 (November 2001): 3188–201. http://dx.doi.org/10.1557/jmr.2001.0440.

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Анотація:

The thermal stability of carbon nitride films, deposited by reactive direct current magnetron sputtering in N2 discharge, was studied for postdeposition annealing temperatures TA up to 1000 °C. Films were grown at temperatures of 100 °C (amorphous structure) and 350 and 550 °C (fullerenelike structure) and were analyzed with respect to thickness, composition, microstructure, bonding structure, and mechanical properties as a function of TA and annealing time. All properties investigated were found to be stable for annealing up to 300 °C for long times (>48 h). For higher TA, nitrogen is lost from the films and graphitization takes place. At TA = 500 °C the graphitization process takes up to 48 h while at TA = 900 °C it takes less than 2 min. A comparison on the evolution of x-ray photoelectron spectroscopy, electron energy loss spectroscopy and Raman spectra during annealing shows that for TA > 800 °C, preferentially pyridinelike N and –C≡N is lost from the films, mainly in the form of molecular N2 and C2N2, while N substituted in graphite is preserved the longest in the structure. Films deposited at the higher temperature exhibit better thermal stability, but annealing at temperatures a few hundred degrees Celsius above the deposition temperature for long times is always detrimental for the mechanical properties of the films.

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33

Miceli, P. F., H. Zabel, J. A. Dura, and C. P. Flynn. "Anomalous lattice expansion of metal-hydrogen thin films." Journal of Materials Research 6, no. 5 (May 1991): 964–68. http://dx.doi.org/10.1557/jmr.1991.0964.

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Анотація:

We report x-ray diffraction experiments investigating the lattice expansion due to hydrogen in Nb/Ta superlattices and thin Nb films. For low hydrogen concentrations (cH < 0.09 H/metal), the lattice expands only normal to the plane of the film due to the epitaxial constraints imposed by the substrate. At higher concentrations, corresponding to strains on the order of the critical strains expected for the formation of misfit dislocations, we find a structural instability which leads to the formation of two metal-H phases, one of which has a lattice expansion in the plane of the film. These results differ significantly from the expected phase diagram and properties of the bulk metal-H systems.

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34

Jäger, S., K. Bewilogua, and C. P. Klages. "Infrared spectroscopic investigations on h-BN and mixed h/c-BN thin films." Thin Solid Films 245, no. 1-2 (June 1994): 50–54. http://dx.doi.org/10.1016/0040-6090(94)90876-1.

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35

Mohammed Al-Ansari, Ramiz A. "The effect of annealing temperatures on the optical parameters of NiO0.99Cu0.01 thin films." Iraqi Journal of Physics (IJP) 14, no. 29 (February 3, 2019): 73–81. http://dx.doi.org/10.30723/ijp.v14i29.223.

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Анотація:

NiO0.99Cu0.01 films have been deposited using thermal evaporationtechnique on glass substrates under vacuum 10-5mbar. The thicknessof the films was 220nm. The as -deposited films were annealed todifferent annealing temperatures (373, 423, and 473) K undervacuum 10-3mbar for 1 h. The structural properties of the films wereexamined using X-ray diffraction (XRD). The results show that noclear diffraction peaks in the range 2θ= (20-50)o for the as depositedfilms. On the other hand, by annealing the films to 423K in vacuumfor 1 h, a weak reflection peak attributable to cubic NiO wasdetected. On heating the films at 473K for 1 h, this peak wasobserved to be stronger. The most intense peak is at 2θ = 37.12o withthe preferential orientation of the films being (111) plane. The opticalproperties of the films have been studied. The effect of annealingtemperature on the optical parameters of NiO0.99Cu0.01 such astransmittance, reflectance, absorption coefficient, refractive index,extinction coefficient, and real and imaginary parts of dielectricconstant has been reported.

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36

KITA, R., Y. MATSU, Y. MASUDA, and S. YANO. "STABILIZATION AGAINST RESISTANCE DEGRADATION OF SrTiO3 THIN FILMS BY Er DOPING." Modern Physics Letters B 13, no. 27 (November 20, 1999): 983–89. http://dx.doi.org/10.1142/s0217984999001202.

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Анотація:

Doping effect of Er on the resistance degradation of SrTiO 3 thin films was investigated. The rate of the resistance degradation was decreased with the increase of the Er content in the films. The increase in the leakage current density at 100°C for the Er-0.186-mol%-doped SrTiO 3 thin film was less than one order of magnitude even after 1000 h, while that for undoped SrTiO 3 thin films, it was by about one order of magnitude after 10 h. The Er-doped STO thin film also showed high stability of the interface between the films and the Pt electrodes against heat treatment in N 2.

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37

Yoon, Dae Sung, Chang Jung Kim, Joon Sung Lee, Won Jong Lee, and Kwangsoo No. "Epitaxial growth of sol-gel PLZT thin films." Journal of Materials Research 9, no. 2 (February 1994): 420–25. http://dx.doi.org/10.1557/jmr.1994.0420.

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Анотація:

Epitaxial lead lanthanum zirconate titanate [PLZT(9/50/50)] thin films were fabricated on various single crystal substrates using the spin coating of metallo-organic solutions. The films were heat-treated at 700 °C for 1 h using the direct insertion method. The films were epitaxially grown with (100), (100), and (110) being parallel to the SrTiO3(100), the MgO(100), and the sapphire (0112) substrates, respectively. The epitaxy of the films was investigated using x-ray diffraction, pole figures, rocking curves, and scanning electron microscopy.

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38

Prado, R. J., D. R. S. Bittencourt, M. H. Tabacniks, M. C. A. Fantini, M. N. P. Carreño, and I. Pereyra. "Distribution of Pores in a-Si1−x C x :H Thin Films." Journal of Applied Crystallography 30, no. 5 (October 1, 1997): 659–63. http://dx.doi.org/10.1107/s0021889897001349.

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The aim of this paper is to compare the optical, compositional and morphological properties of a-Si1 − x C x : H films deposited by plasma enhanced chemical vapour deposition (PECVD) using different mixtures of silane (SiH4) and methane (CH4) under minimum attainable deposition pressure. Films deposited at lower silane flow present a higher carbon content and larger optical gap. The morphology of the films was investigated by small-angle X-ray scattering (SAXS) using two different light sources: (i) conventional tube and (ii) synchrotron radiation. The analysis of the data from both experiments was performed in order to determine a size distribution for spherical pores. The results obtained with both light sources are consistent: the increase in the CH4 concentration implies broader size distribution functions, with an increase of the pore size up to 10 nm. Larger pores are found in films deposited at lower silane flow. For all samples, the density of the smaller pores dominates the size distribution. The relative microvoid density is not proportional to the carbon concentration but presents a maximum for the low carbon content films.

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39

Rogers, Bridget R., Zhe Song, Robert D. Geil, and Robert A. Weller. "Optimization of UHV-CVD Thin Films for Gate Dielectric Applications." Advances in Science and Technology 45 (October 2006): 1351–54. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1351.

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In-situ and ex-situ spectroscopic ellipsometry (SE), atomic force microscopy (AFM), transmission electron microscopy (TEM), and time of flight medium energy backscattering (ToF MEBS), are used to investigate the properties of 30 and 60 Å ZrO2 films deposited at different temperatures on hydrogen terminated silicon (H-Si) and native silicon oxide surfaces. Results show that the initial-stage deposition of ZrO2 on H-Si and native silicon oxide surfaces are different. A 3-dimesional (3D) type nucleation process of ZrO2 on H-Si leads to high surface roughness films, while layer-by-layer deposition on native silicon oxide surfaces leads to smooth, uniform ZrO2 films. An interfacial layer, between the substrate and the metal oxide, is formed through two independent mechanisms: reaction between the starting surfaces and ZTB or its decomposition intermediates, and diffusion of reactive oxidants through the forming ZrO2 interfacial stack layer to react with the substrate.

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40

Admon, U., M. P. Dariel, E. Grünbaum, and G. Kimmel. "Defect structure in Co-W thin films." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 822–23. http://dx.doi.org/10.1017/s0424820100145455.

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Thin films of Co-W, 300-500Å thick, electrodeposited unto polycrystalline copper substrates (the details of the deposition process are given in ref. 1), consist of a background of small grains of size of the order of the film thickness, in which 10-20 times larger grains are dispersed. These large grains display a predominant [0001]hcp or [001] or [lll]fcc texture. The large grains are mostly faulted, the faults appearing as parallel stripes running across their whole width (Fig. 1). These stripes have been identified by SAD and DF as being alternating hep and fee platelets. The diffraction pattern (Fig. 2), taken from grain A in Fig.1, indicates a (0001)h||(001)c||substrate surface, with [1010]h||[110]c orientation relationship between the hep and fee platelets (relationship I). The streaking and the appearance of the {200} cubic spots as cross shaped satellites is attributed to the presence of stacking faults on the {111} planes.

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41

Nikam, S. M., A. Sharma, M. Rahaman, A. M. Teli, S. H. Mujawar, D. R. T. Zahn, P. S. Patil, S. C. Sahoo, G. Salvan, and P. B. Patil. "Pulsed laser deposited CoFe2O4 thin films as supercapacitor electrodes." RSC Advances 10, no. 33 (2020): 19353–59. http://dx.doi.org/10.1039/d0ra02564j.

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Cobalt ferrite thin films were grown by PLD at different temperatures as an electrode material for supercapacitors. The films deposited at room temperature exhibited the best power density (3277 W kg⁻¹) and energy density (17 W h kg⁻¹) values.

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42

El Khakani, M. A., M. Chaker, A. Jean, S. Boily, J. C. Kieffer, M. E. O'Hern, M. F. Ravet, and F. Rousseaux. "Hardness and Young's modulus of amorphous a-SiC thin films determined by nanoindentation and bulge tests." Journal of Materials Research 9, no. 1 (January 1994): 96–103. http://dx.doi.org/10.1557/jmr.1994.0096.

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Due to its interesting mechanical properties, silicon carbide is an excellent material for many applications. In this paper, we report on the mechanical properties of amorphous hydrogenated or hydrogen-free silicon carbide thin films deposited by using different deposition techniques, namely plasma enhanced chemical vapor deposition (PECVD), laser ablation deposition (LAD), and triode sputtering deposition (TSD). a-SixC1−x: H PECVD, a-SiC LAD, and a-SiC TSD thin films and corresponding free-standing membranes were mechanically investigated by using nanoindentation and bulge techniques, respectively. Hardness (H), Young's modulus (E), and Poisson's ratio (v) of the studied silicon carbide thin films were determined. It is shown that for hydrogenated a-SixC1−x: H PECVD films, both hardness and Young's modulus are dependent on the film composition. The nearly stoichiometric a-SiC: H films present higher H and E values than the Si-rich a-SixC1−x: H films. For hydrogen-free a-SiC films, the hardness and Young's modulus were as high as about 30 GPa and 240 GPa, respectively. Hydrogen-free a-SiC films present both hardness and Young's modulus values higher by about 50% than those of hydrogenated a-SiC: H PECVD films. By using the FTIR absorption spectroscopy, we estimated the Si-C bond densities (NSiC) from the Si-C stretching absorption band (centered around 780 cm−1), and were thus able to correlate the observed mechanical behavior of a-SiC films to their microstructure. We indeed point out a constant-plus-linear variation of the hardness and Young's modulus upon the Si-C bond density, over the NSiC investigated range [(4–18) × 1022 bond · cm−3], regardless of the film composition or the deposition technique.

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43

Al-Douri, A. A. J., M. F. A. Alias, A. A. Alnajjar, and M. N. Makadsi. "Electrical and Optical Properties of :H Thin Films Prepared by Thermal Evaporation Method." Advances in Condensed Matter Physics 2010 (2010): 1–8. http://dx.doi.org/10.1155/2010/428739.

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Thin a-:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the :H thin films as pure, doped with 3.5% of Al (p-type) and that doped with 3.5% As (n-type), were proposed.

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44

Davis, C. A., D. R. McKenzie, and R. C. McPhedran. "Optical properties and microstructure of thin silver films." Optics Communications 85, no. 1 (August 1991): 70–82. http://dx.doi.org/10.1016/0030-4018(91)90054-h.

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45

Dam, B., G. M. Stollman, J. van Bentum, P. Berghuis та P. H. Kes. "Resistive states in thin films of Y2Ba4Cu8O16−δ". Physica C: Superconductivity 167, № 3-4 (травень 1990): 348–58. http://dx.doi.org/10.1016/0921-4534(90)90354-h.

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46

Schneider, J., T. Göddenhenrich, U. Krüger, and R. Wördenweber. "Preparation and characterization of thin epitaxial YBa2Cu3Oy-films." Physica C: Superconductivity 185-189 (December 1991): 1933–34. http://dx.doi.org/10.1016/0921-4534(91)91091-h.

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47

Hübler, R., S. R. Teixeira, W. H. Schreiner, and I. J. R. Baumvol. "IBAD growing of magnetic iron nitride thin films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 80-81 (January 1993): 1392–96. http://dx.doi.org/10.1016/0168-583x(93)90806-h.

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48

Powalla, M., та K. Herz. "Co-evaporated thin films of semiconducting β-FeSi2". Applied Surface Science 65-66 (березень 1993): 482–88. http://dx.doi.org/10.1016/0169-4332(93)90706-h.

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49

Evans, Ryan D., Gary L. Doll, and Jeffrey T. Glass. "Relationships between the thermal stability, friction, and wear properties of reactively sputtered Si–aC:H thin films." Journal of Materials Research 17, no. 11 (November 2002): 2888–96. http://dx.doi.org/10.1557/jmr.2002.0419.

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The friction and wear performance were correlated with the thermal stability of reactively sputtered Si–aC:H thin films containing various Si and H concentrations. The average steady-state friction coefficients as measured by dry sliding pin-on-disk tests decreased with increasing Si and H content. Furthermore, the films with high Si and H formed thick transfer films as compared to the films with little or no Si and H content. Minimums in average ball abrasion rate and average film wear rate were observed at the Si/C = 0.10 film composition. The most intense and distinct “graphitic” Raman peaks were collected from the Si/C = 0.10 transfer film debris. In addition, the Si/C = 0.10 film also had the most distinguishable graphitic Raman signature after annealing in air at 500 °C compared to the other Si–aC:H films, suggesting a possible relationship between the nature of transfer films resulting from dry sliding in air and the bulk films that were annealed in air.

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50

Cho, Jaewon, and Seuk Joo Rhee. "PL Study on ZnO Thin Films After H-plasma Treatment." Journal of the Korean Institute of Electrical and Electronic Material Engineers 28, no. 1 (January 1, 2015): 17–20. http://dx.doi.org/10.4313/jkem.2015.28.1.17.

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