Статті в журналах з теми "Growth defects"
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Scandale, Eugenio, Sergio Lucchesi, and Giorgio Graziani. "Growth defects and growth marks in pegmatite beryls." European Journal of Mineralogy 2, no. 3 (June 21, 1990): 305–12. http://dx.doi.org/10.1127/ejm/2/3/0305.
Повний текст джерелаAgrosí, Giovanna, Eugenio Scandale, and Maria Arcangela Digennaro. "Growth defects of a melanite crystal." Neues Jahrbuch für Mineralogie - Abhandlungen 176, no. 1 (February 26, 2001): 89–107. http://dx.doi.org/10.1127/njma/176/2001/89.
Повний текст джерелаAgrosì, Giovanna, Gioacchino Tempesta, Eugenio Scandale, and Jeff W. Harris. "Growth and post-growth defects in a diamond from Finsch mine (South Africa)." European Journal of Mineralogy 25, no. 4 (December 20, 2013): 551–59. http://dx.doi.org/10.1127/0935-1221/2013/0025-2301.
Повний текст джерелаGao, Jiang-Dong, Jian-Li Zhang, Xin Zhu, Xiao-Ming Wu, Chun-Lan Mo, Shuan Pan, Jun-Lin Liu, and Feng-Yi Jiang. "Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition." Journal of Applied Crystallography 52, no. 3 (May 31, 2019): 637–42. http://dx.doi.org/10.1107/s1600576719005521.
Повний текст джерелаJones, D. P., and T. R. Leax. "Fatigue Crack Growth Testing of Sub-Clad Defects." Journal of Pressure Vessel Technology 121, no. 3 (August 1, 1999): 269–75. http://dx.doi.org/10.1115/1.2883702.
Повний текст джерелаHens, Philip, Julian Müller, Günter Wagner, Rickard Liljedahl, Erdmann Spiecker, and Mikael Syväjärvi. "Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation." Materials Science Forum 740-742 (January 2013): 283–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.283.
Повний текст джерелаMaerten, Thibault, Cédric Jaoul, Roland Oltra, Patrice Duport, Christophe Le Niniven, Pascal Tristant, Frédéric Meunier, and Olivier Jarry. "Micrometric Growth Defects of DLC Thin Films." C — Journal of Carbon Research 5, no. 4 (November 14, 2019): 73. http://dx.doi.org/10.3390/c5040073.
Повний текст джерелаEverson, M. P., and M. A. Tamor. "Investigation of growth rates and morphology for diamond growth by chemical vapor deposition." Journal of Materials Research 7, no. 6 (June 1992): 1438–44. http://dx.doi.org/10.1557/jmr.1992.1438.
Повний текст джерелаKirste, Lutz, Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Boleslaw Lucznik, and Michal Bockowski. "Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography." Materials 14, no. 19 (September 22, 2021): 5472. http://dx.doi.org/10.3390/ma14195472.
Повний текст джерелаSugiyama, Naohiro, Masanori Yamada, Yasushi Urakami, Masakazu Kobayashi, Takashi Masuda, Keisuke Shigetoh, Itaru Gunjishima, Fusao Hirose, and Shoichi Onda. "Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide." Materials Science Forum 778-780 (February 2014): 386–89. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.386.
Повний текст джерелаDas, Hrishikesh, Galyna Melnychuk, and Yaroslav Koshka. "Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth." Materials Science Forum 615-617 (March 2009): 121–24. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.121.
Повний текст джерелаShrivastava, Amitesh, Peter G. Muzykov, B. Pearman, S. Michael Angel, and Tangali S. Sudarshan. "Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD." Materials Science Forum 600-603 (September 2008): 139–42. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.139.
Повний текст джерелаGuo, Ling, Koji Kamei, Kenji Momose, and Hiroshi Osawa. "Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate." Materials Science Forum 897 (May 2017): 39–42. http://dx.doi.org/10.4028/www.scientific.net/msf.897.39.
Повний текст джерелаShechtman, D., J. L. Hutchison, L. H. Robins, E. N. Farabaugh, and A. Feldman. "Growth defects in diamond films." Journal of Materials Research 8, no. 3 (March 1993): 473–79. http://dx.doi.org/10.1557/jmr.1993.0473.
Повний текст джерелаLebedev, Vadim, Jan Engels, Jan Kustermann, Jürgen Weippert, Volker Cimalla, Lutz Kirste, Christian Giese, et al. "Growth defects in heteroepitaxial diamond." Journal of Applied Physics 129, no. 16 (April 28, 2021): 165301. http://dx.doi.org/10.1063/5.0045644.
Повний текст джерелаZhao, Xiaoji, Yanlu Li, and Xian Zhao. "Density Functional Theory Study of the Point Defects on KDP (100) and (101) Surfaces." Molecules 27, no. 24 (December 17, 2022): 9014. http://dx.doi.org/10.3390/molecules27249014.
Повний текст джерелаNoesges, Brenton A., Daesu Lee, Jung-Woo Lee, Chang-Beom Eom, and Leonard J. Brillson. "Nanoscale interplay of native point defects near Sr-deficient SrxTiO3/SrTiO3 interfaces." Journal of Vacuum Science & Technology A 40, no. 4 (July 2022): 043201. http://dx.doi.org/10.1116/6.0001782.
Повний текст джерелаLiu, Mingqi, and John M. Cowley. "Growth behavior and growth defects of carbon nanotubes." Materials Science and Engineering: A 185, no. 1-2 (September 1994): 131–40. http://dx.doi.org/10.1016/0921-5093(94)90936-9.
Повний текст джерелаKhoury, Muin J., J. David Erickson, José F. Cordero, and Brian J. McCarthy. "Congenital Malformations and Intrauterine Growth Retardation: A Population Study." Pediatrics 82, no. 1 (July 1, 1988): 83–90. http://dx.doi.org/10.1542/peds.82.1.83.
Повний текст джерелаFilip, Octavian, Boris M. Epelbaum, Juan Li, Matthias Bickermann, Xian Gang Xu, and Albrecht Winnacker. "Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals." Materials Science Forum 600-603 (September 2008): 23–26. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.23.
Повний текст джерелаLarsen, Arne Nylandsted. "Growth-Defects and Process-Induced Defects in SiGe-Based Heterostructures." Solid State Phenomena 69-70 (August 1999): 43–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.69-70.43.
Повний текст джерелаDas, Hrishikesh, Swapna Sunkari, Timothy Oldham, Josh Rodgers, and Janna Casady. "Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance." Materials Science Forum 740-742 (January 2013): 221–24. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.221.
Повний текст джерелаTuomisto, Filip. "Vacancy Defects in Bulk and Quasi-Bulk GaN Crystals." Crystals 12, no. 8 (August 9, 2022): 1112. http://dx.doi.org/10.3390/cryst12081112.
Повний текст джерелаXu, Qing Yan, Bai Cheng Liu, Zuo Jian Liang, Jia Rong Li, Shi Zhong Liu, and Ha Llong Yuan. "Modeling of Unidirectional Growth in a Single Crystal Turbine Blade Casting." Materials Science Forum 508 (March 2006): 111–16. http://dx.doi.org/10.4028/www.scientific.net/msf.508.111.
Повний текст джерелаCONRAD, EDWARD H. "THE STABILITY OF LOW INDEX METAL SURFACES TO TOPOLOGICAL DEFECTS." International Journal of Modern Physics B 05, no. 03 (February 10, 1991): 427–59. http://dx.doi.org/10.1142/s0217979291000274.
Повний текст джерелаXie, Mingjiang, Yifei Wang, Weinan Xiong, Jianli Zhao, and Xianjun Pei. "A Crack Propagation Method for Pipelines with Interacting Corrosion and Crack Defects." Sensors 22, no. 3 (January 27, 2022): 986. http://dx.doi.org/10.3390/s22030986.
Повний текст джерелаLa Via, Francesco, Massimo Zimbone, Corrado Bongiorno, Antonino La Magna, Giuseppe Fisicaro, Ioannis Deretzis, Viviana Scuderi, et al. "New Approaches and Understandings in the Growth of Cubic Silicon Carbide." Materials 14, no. 18 (September 16, 2021): 5348. http://dx.doi.org/10.3390/ma14185348.
Повний текст джерелаCamarda, Massimo, Antonino La Magna, and Francesco La Via. "Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study." Materials Science Forum 679-680 (March 2011): 48–54. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.48.
Повний текст джерелаWada, Takahiro, Takayuki Negami, and Mikihiko Nishitani. "Growth defects in CuInSe2 thin films." Journal of Materials Research 9, no. 3 (March 1994): 658–62. http://dx.doi.org/10.1557/jmr.1994.0658.
Повний текст джерелаHeide, G., H. Follner, R. A. Jackson, and P. J. Wilde. "Computer simulations of crystal growth defects." Radiation Effects and Defects in Solids 151, no. 1-4 (November 1999): 317–23. http://dx.doi.org/10.1080/10420159908245974.
Повний текст джерелаBourrat, Xavier, Li Qiao, QingLing Feng, Martine Angellier, Aurore Dissaux, Jean-Michel Beny, Vincent Barbin, Philippe Stempflé, Marthe Rousseau, and Evelyne Lopez. "Origin of growth defects in pearl." Materials Characterization 72 (October 2012): 94–103. http://dx.doi.org/10.1016/j.matchar.2012.07.010.
Повний текст джерелаPanjan, P., M. Čekada, M. Panjan, and D. Kek-Merl. "Growth defects in PVD hard coatings." Vacuum 84, no. 1 (August 2009): 209–14. http://dx.doi.org/10.1016/j.vacuum.2009.05.018.
Повний текст джерелаRosenfeld, Ron G., Alicia Belgorosky, Cecelia Camacho-Hubner, M. O. Savage, J. M. Wit, and Vivian Hwa. "Defects in growth hormone receptor signaling." Trends in Endocrinology & Metabolism 18, no. 4 (May 2007): 134–41. http://dx.doi.org/10.1016/j.tem.2007.03.004.
Повний текст джерелаSvoboda, Roman, and Daniela Brandová. "Crystal growth from mechanically induced defects." Journal of Thermal Analysis and Calorimetry 127, no. 1 (May 24, 2016): 799–808. http://dx.doi.org/10.1007/s10973-016-5529-0.
Повний текст джерелаBretz, K. C., T. S. Kuan, P. D. Agnello, and T. O. Sedgwick. "Effects of surface oxide on low-temperature epitaxial growth of Si." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 798–99. http://dx.doi.org/10.1017/s0424820100088300.
Повний текст джерелаLiu, Yi Lin. "Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide." Solid State Phenomena 332 (May 30, 2022): 73–84. http://dx.doi.org/10.4028/p-4x61u9.
Повний текст джерелаMorikawa, Sergio Ricardo Kokay, Daniel Pontes Lannes, and Antonio Lopes Gama. "Application of Piezoelectric Materials for Monitoring the Growth of Defects in Structures." Materials Science Forum 643 (March 2010): 113–18. http://dx.doi.org/10.4028/www.scientific.net/msf.643.113.
Повний текст джерелаHuang, Zi Qian, Qing Lian Xie, Guo Hua Huang, and Pei Lan Li. "Growth-Induced Stress in Hard Coating." Advanced Materials Research 393-395 (November 2011): 127–30. http://dx.doi.org/10.4028/www.scientific.net/amr.393-395.127.
Повний текст джерелаПещерова, С. М., Е. Б. Якимов, А. И. Непомнящих, В. И. Орлов, О. В. Феклисова, Л. А. Павлова та Р. В. Пресняков. "Зависимость объемных электрофизических свойств мультикремния от параметров разориентации зерен". Физика и техника полупроводников 53, № 1 (2019): 59. http://dx.doi.org/10.21883/ftp.2019.01.46988.8814.
Повний текст джерелаFarris, T. N., L. M. Keer, and R. K. Steele. "Life Prediction for Unstable Shell Growth in Rails." Journal of Engineering for Industry 112, no. 2 (May 1, 1990): 175–80. http://dx.doi.org/10.1115/1.2899563.
Повний текст джерелаZhou, Xiaowang. "Impact of Molecular Dynamics Simulations on Research and Development of Semiconductor Materials." MRS Advances 4, no. 61-62 (2019): 3381–98. http://dx.doi.org/10.1557/adv.2019.360.
Повний текст джерелаMao, Kai Li, Ying Min Wang, Bin Li, and Gao Yang Zhao. "Origin Analysis and Elimination of Obtuse Triangular Defects in 4° Off 4H-SiC Epitaxy." Materials Science Forum 924 (June 2018): 168–71. http://dx.doi.org/10.4028/www.scientific.net/msf.924.168.
Повний текст джерелаBatstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.
Повний текст джерелаBassett, Lee C., Audrius Alkauskas, Annemarie L. Exarhos, and Kai-Mei C. Fu. "Quantum defects by design." Nanophotonics 8, no. 11 (October 4, 2019): 1867–88. http://dx.doi.org/10.1515/nanoph-2019-0211.
Повний текст джерелаPanjan, Peter, Aljaž Drnovšek, and Goran Dražić. "Influence of Growth Defects on the Oxidation Resistance of Sputter-Deposited TiAlN Hard Coatings." Coatings 11, no. 2 (January 22, 2021): 123. http://dx.doi.org/10.3390/coatings11020123.
Повний текст джерелаSmardon, Anne M., Heba I. Diab, Maureen Tarsio, Theodore T. Diakov, Negin Dehdar Nasab, Robert W. West, and Patricia M. Kane. "The RAVE complex is an isoform-specific V-ATPase assembly factor in yeast." Molecular Biology of the Cell 25, no. 3 (February 2014): 356–67. http://dx.doi.org/10.1091/mbc.e13-05-0231.
Повний текст джерелаThota, Sravan, Shutang Chen, Yadong Zhou, Yong Zhang, Shengli Zou, and Jing Zhao. "Structural defect induced peak splitting in gold–copper bimetallic nanorods during growth by single particle spectroscopy." Nanoscale 7, no. 35 (2015): 14652–58. http://dx.doi.org/10.1039/c5nr03979g.
Повний текст джерелаKrishnan, Bharat, Hrishikesh Das, Huang De Lin, and Yaroslav Koshka. "Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method." Materials Science Forum 556-557 (September 2007): 149–52. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.149.
Повний текст джерелаHsu, Julia W. P. "Semiconductor Defect Studies Using Scanning Probes." Microscopy and Microanalysis 6, S2 (August 2000): 704–5. http://dx.doi.org/10.1017/s1431927600036011.
Повний текст джерелаAlshareef, Mohammed, Ahmed Alshareef, Tyler Vasas, Aakash Shingala, Jonathan Cutrone, and Ramin Eskandari. "Pediatric Cranioplasty Using Hydroxyapatite Cement: A Retrospective Review and Preliminary Computational Model." Pediatric Neurosurgery 57, no. 1 (November 30, 2021): 40–49. http://dx.doi.org/10.1159/000520954.
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