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Автор: Grafiati
Опубліковано: 14 березня 2023

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1

Rahmani, Meisam, Razali Ismail, Mohammad Taghi Ahmadi, Mohammad Javad Kiani, Mehdi Saeidmanesh, F. A. Hediyeh Karimi, Elnaz Akbari, and Komeil Rahmani. "The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance." Journal of Nanomaterials 2013 (2013): 1–8. http://dx.doi.org/10.1155/2013/636239.

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Анотація:
Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.
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2

Ashour, A., M. Saqr, M. AbdelKarim, A. Gamal, A. Sharaf, and M. Serry. "Schottky Diode Graphene Based Sensors." International Journal on Smart Sensing and Intelligent Systems 7, no. 5 (2020): 1–4. http://dx.doi.org/10.21307/ijssis-2019-097.

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3

Mohd Saman, Rahimah, Sharaifah Kamariah Wan Sabli, Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Haniff, and Mohd Ismahadi Syono. "High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications." Applied Sciences 9, no. 8 (April 17, 2019): 1587. http://dx.doi.org/10.3390/app9081587.

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Анотація:
Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.
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4

Labed, Madani, Nouredine Sengouga та You Seung Rim. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer". Nanomaterials 12, № 5 (1 березня 2022): 827. http://dx.doi.org/10.3390/nano12050827.

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Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, and in the series resistance (RS), from 60.3 to 2.90 mΩ.cm2. However, the saturation current (JS) increased from 1.26×10−11 to 8.3×10−7(A/cm2). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky–Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.
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5

Shtepliuk, Ivan, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, and Rositsa Yakimova. "Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals." Beilstein Journal of Nanotechnology 7 (November 22, 2016): 1800–1814. http://dx.doi.org/10.3762/bjnano.7.173.

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Анотація:
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.
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6

Dub, Maksym, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Maciej Sakowicz, Paweł Prystawko, Jacek Kacperski, et al. "Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures." Materials 13, no. 18 (September 17, 2020): 4140. http://dx.doi.org/10.3390/ma13184140.

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Анотація:
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold current in the sub-picoamperes range. The effective trap density responsible for the 1/f low-frequency noise was found within the range of (1–5) · 1019 eV−1 cm−3. These values are of the same order of magnitude as reported earlier and in AlGaN/GaN transistors with Ni/Au Schottky gate studied as a reference in the current study. A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene.
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7

Seven, Elanur, Elif Öz Orhan, and Sema Bilge Ocak. "Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation." Physica Scripta 96, no. 12 (November 15, 2021): 125852. http://dx.doi.org/10.1088/1402-4896/ac369f.

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Abstract The present work intends to discover the influences of 60Co gamma (γ) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range −6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequency. The experimental results showed that dielectric features of the structure are dependent on the radiation dose and applied voltage and to be a strong function of frequency.
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8

Selvi, Hakan, Nawapong Unsuree, Eric Whittaker, Matthew P. Halsall, Ernie W. Hill, Andrew Thomas, Patrick Parkinson, and Tim J. Echtermeyer. "Towards substrate engineering of graphene–silicon Schottky diode photodetectors." Nanoscale 10, no. 7 (2018): 3399–409. http://dx.doi.org/10.1039/c7nr09591k.

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Анотація:
We present a systematic study of the performance of graphene–silicon Schottky diode photodetectors under varying operating conditions, demonstrating the influence of the substrate and interfacial oxide layer.
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9

Selvi, Hakan, Ernie W. Hill, Patrick Parkinson, and Tim J. Echtermeyer. "Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors." Nanoscale 10, no. 40 (2018): 18926–35. http://dx.doi.org/10.1039/c8nr05285a.

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10

Luo, Lin-Bao, Shun-Hang Zhang, Rui Lu, Wei Sun, Qun-Ling Fang, Chun-Yan Wu, Ji-Gang Hu, and Li Wang. "p-type ZnTe:Ga nanowires: controlled doping and optoelectronic device application." RSC Advances 5, no. 18 (2015): 13324–30. http://dx.doi.org/10.1039/c4ra14096f.

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11

Shen, Lingyan, Xinhong Cheng, Zhongjian Wang, Chao Xia, Duo Cao, Li Zheng, Qian Wang, and Yuehui Yu. "Passivation effect of graphene on AlGaN/GaN Schottky diode." RSC Advances 5, no. 105 (2015): 86593–97. http://dx.doi.org/10.1039/c5ra12550b.

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12

Apicella, Valerio, Teslim Ayinde Fasasi, Shu Wang, Sipeng Lei, and Antonio Ruotolo. "A Multilayer‐Graphene/Silicon Infrared Schottky Photo‐Diode." Advanced Electronic Materials 5, no. 12 (August 6, 2019): 1900594. http://dx.doi.org/10.1002/aelm.201900594.

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13

Kumar, Ashish, Arathy Varghese, Shriniwas Yadav, Mahanth Prasad, Vijay Janyani, and R. P. Yadav. "Influence of Temperature on Graphene/ZnO Heterojunction Schottky Diode Characteristics." Journal of Nanoscience and Nanotechnology 21, no. 5 (May 1, 2021): 3165–70. http://dx.doi.org/10.1166/jnn.2021.19084.

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Анотація:
The paper reports development of graphene/ZnO heterojunction Schottky diode structure and its structural and electrical characterization. Graphene is grown on copper substrate using chemical vapor deposition (CVD) and transferred on flexible substrate (indium Tin Oxide coated PET). The grown thin layer is characterized using scanning electron microscopy and Raman spectroscopy which confirm uniformity and high-quality graphene layer. The sputtered ZnO is deposited and characterized which confirms c-axis (002) orientation and uniform growth of ZnO film. Silver (Ag) as a top electrode has been deposited and I–V measurement has been done. The effect of operating temperature (300 K to 425 K) on I–V characteristics of the fabricated structure has been measured experimentally. The other diode parameters such as ideality factor and effective barrier height have been derived. The reliability of the heterojunction synthesized is proved by the diode ideality factor of 1.03 attained at 425 K. The excellent C–V characteristics (capacitance of 48pF) of the device prove that the device is an excellent candidate for application as supercapacitors. The fabricated structure can be utilized as an ultraviolet photodetector, solar cell, energy storage devices, etc.
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14

Zhu, Miao, Li Zhang, Xinming Li, Yijia He, Xiao Li, Fengmei Guo, Xiaobei Zang, et al. "TiO2 enhanced ultraviolet detection based on a graphene/Si Schottky diode." Journal of Materials Chemistry A 3, no. 15 (2015): 8133–38. http://dx.doi.org/10.1039/c5ta00702j.

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15

Lee, Youngmin, Deuk Young Kim, and Sejoon Lee. "Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity." Nanomaterials 9, no. 5 (May 24, 2019): 799. http://dx.doi.org/10.3390/nano9050799.

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Анотація:
The low-power, high-performance graphene/ZnO Schottky photodiodes were demonstrated through the direct sputter-growth of ZnO onto the thermally-cleaned graphene/SiO2/Si substrate at room temperature. Prior to the growth of ZnO, a thermal treatment of the graphene surface was performed at 280 °C for 10 min in a vacuum to desorb chemical residues that may serve as trap sites at the interface between graphene and ZnO. The device clearly showed a rectifying behavior with the Schottky barrier of ≈0.61 eV and an ideality factor of 1.16. Under UV illumination, the device exhibited the excellent photoresponse characteristics in both forward and reverse bias regions. When illuminating UV light with the optical power density of 0.62 mW/cm2, the device revealed a high on/off current ratio of >103 even at a low bias voltage of 0.1 V. For the transient characteristics upon switching of UV light pulses, the device represented a fast and stable photoresponse (i.e., rise time: 0.16 s, decay time: 0.19 s). From the temperature-dependent current–voltage characteristics, such an outstanding photoresponse characteristic was found to arise from the enhanced Schottky barrier homogeneity via the thermal treatment of the graphene surface. The results suggest that the ZnO/graphene Schottky diode holds promise for the application in high-performance low-power UV photodetectors.
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16

Rahmani, Meisam, M. T. Ahmadi, Razali Ismail, and M. H. Ghadiry. "Performance of Bilayer Graphene Nanoribbon Schottky Diode in Comparison with Conventional Diodes." Journal of Computational and Theoretical Nanoscience 10, no. 2 (February 1, 2013): 323–27. http://dx.doi.org/10.1166/jctn.2013.2699.

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17

Periyanagounder, Dharmaraj, Paulraj Gnanasekar, Purushothaman Varadhan, Jr-Hau He, and Jeganathan Kulandaivel. "High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode." Journal of Materials Chemistry C 6, no. 35 (2018): 9545–51. http://dx.doi.org/10.1039/c8tc02786b.

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Анотація:
In this work, we design and demonstrate a graphene/silicon (Gr/Si) van der Walls (vdW) heterostructure for high-performance photodetectors, where graphene acts as an efficient carrier collector and Si as a photon absorption layer. The Gr/Si heterojunction exhibits superior Schottky diode characteristics with a barrier height of 0.76 eV and performs well as a self-powered detector responding to 532 nm at zero bias.
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18

Kiat, Wong King, Razali Ismail, and M. Taghi Ahmadi. "The Potential Barrier of Graphene Nanoribbon Based Schottky Diode." Journal of Nanoelectronics and Optoelectronics 8, no. 3 (March 1, 2013): 281–84. http://dx.doi.org/10.1166/jno.2013.1467.

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19

Khairir, Nur Samihah, Mohd Rofei Mat Hussin, Iskhandar Md Nasir, A. S. M. Mukhter Uz-Zaman, Wan Fazlida Hanim Abdullah, and Ahmad Sabirin Zoolfakar. "Study of Reduced Graphene Oxide for Trench Schottky Diode." IOP Conference Series: Materials Science and Engineering 99 (November 19, 2015): 012031. http://dx.doi.org/10.1088/1757-899x/99/1/012031.

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20

Pandey, Rajiv K., Arun Kumar Singh, and Rajiv Prakash. "Enhancement in performance of polycarbazole-graphene nanocomposite Schottky diode." AIP Advances 3, no. 12 (December 2013): 122120. http://dx.doi.org/10.1063/1.4860952.

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21

Orhan, Elif Oz, Esra Efil, Ozkan Bayram, Nuriye Kaymak, Halil Berberoğlu, Ozun Candemir, Ihor Pavlov, and Sema Bilge Ocak. "3D-graphene-laser patterned p-type silicon Schottky diode." Materials Science in Semiconductor Processing 121 (January 2021): 105454. http://dx.doi.org/10.1016/j.mssp.2020.105454.

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22

Singh, Amol, Md Ahsan Uddin, Tangali Sudarshan, and Goutam Koley. "Tunable Reverse-Biased Graphene/Silicon Heterojunction Schottky Diode Sensor." Small 10, no. 8 (December 23, 2013): 1555–65. http://dx.doi.org/10.1002/smll.201302818.

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23

Khurelbaatar, Zagarzusem, Yeon-Ho Kil, Kyu-Hwan Shim, Hyunjin Cho, Myung-Jong Kim, Sung-Nam Lee, Jae-chan Jeong, Hyobong Hong, and Chel-Jong Choi. "Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode." Superlattices and Microstructures 91 (March 2016): 306–12. http://dx.doi.org/10.1016/j.spmi.2016.01.029.

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24

Heo, J., H. J. Song, K. E. Byun, D. S. Seo, and S. Park. "(Invited) Graphene Based Tunable Schottky Diode for High Performance Devices." ECS Transactions 53, no. 1 (May 2, 2013): 101–6. http://dx.doi.org/10.1149/05301.0101ecst.

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25

Halder, Soumi, Baishakhi Pal, Arka Dey, Sayantan Sil, Pubali Das, Animesh Biswas, and Partha Pratim Ray. "Effect of graphene on improved photosensitivity of MoS2-graphene composite based Schottky diode." Materials Research Bulletin 118 (October 2019): 110507. http://dx.doi.org/10.1016/j.materresbull.2019.110507.

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26

Noroozi, Ali Akbar, and Yaser Abdi. "A graphene/Si Schottky diode for the highly sensitive detection of protein." RSC Advances 9, no. 34 (2019): 19613–19. http://dx.doi.org/10.1039/c9ra03765a.

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27

Che Azmi, Siti Nadiah, Shaharin Fadzli Abd Rahman, and Abdul Manaf Hashim. "Back-to-Back Schottky Diode from Vacuum Filtered and Chemically Reduced Graphene Oxide." Indonesian Journal of Electrical Engineering and Computer Science 10, no. 3 (June 1, 2018): 897. http://dx.doi.org/10.11591/ijeecs.v10.i3.pp897-904.

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Анотація:
<span>This paper presents fabrication of reduced graphene oxide (rGO)/silicon (Si) back-to-back Schottky diode (BBSD) through graphene oxide (GO) thin film formation by vacuum filtration and chemical reduction of the film via ascorbic acid. In order to understand and assess the viability of these two processes, process condition and parameters were varied and analyzed. It was confirmed that the GO film thickness could be controlled by changing GO dispersion volume and concentration. Filtration of 200 ml of 0.4 ppm GO dispersion produced average film thickness of 53 nm. As for the reduction process, long duration was required to produce higher reduction degree. rGO film that underwent two times reduction at before and after transfer process with concentrated ascorbic acid gave the lowest sheet resistance of 3.58 MΩ/sq. In the final part of the paper, result of the BBSD device fabrication and current-voltage characterization were shown. The formed two rGO/Si Schottky junctions in the BBSD gave barrier height of 0.63 and 0.7 eV. The presented results confirmed the viability of fabricating rGO-based device using a simple method and without requirement of sophisticated equipment.</span>
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28

Khurelbaatar, Zagarzusem, Yeon-Ho Kil, Kyu-Hwan Shim, Hyunjin Cho, Myung-Jong Kim, Yong-Tae Kim, and Chel-Jong Choi. "Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode." JSTS:Journal of Semiconductor Technology and Science 15, no. 1 (February 28, 2015): 7–15. http://dx.doi.org/10.5573/jsts.2015.15.1.007.

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29

Berktaş, Zeynep, Mustafa Yıldız, Elanur Seven, Elif Oz Orhan, and Şemsettin Altındal. "PEI N-doped graphene quantum dots/p-type silicon Schottky diode." FlatChem 36 (November 2022): 100436. http://dx.doi.org/10.1016/j.flatc.2022.100436.

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30

Yagmurcukardes, N., H. Aydın, M. Can, A. Yanılmaz, Ö. Mermer, S. Okur, and Y. Selamet. "Effect of Aromatic SAMs Molecules on Graphene/Silicon Schottky Diode Performance." ECS Journal of Solid State Science and Technology 5, no. 7 (2016): M69—M73. http://dx.doi.org/10.1149/2.0141607jss.

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31

Fattah, Ali, and Saeid Khatami. "Selective H2S Gas Sensing With a Graphene/n-Si Schottky Diode." IEEE Sensors Journal 14, no. 11 (November 2014): 4104–8. http://dx.doi.org/10.1109/jsen.2014.2334064.

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32

Azmi, Siti Nadiah Che, Shaharin Fadzli Abd Rahman, Amirjan Nawabjan, and Abdul Manaf Hashim. "Junction properties analysis of silicon back-to-back Schottky diode with reduced graphene oxide Schottky electrodes." Microelectronic Engineering 196 (September 2018): 32–37. http://dx.doi.org/10.1016/j.mee.2018.04.020.

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33

Uddin, Md Ahsan, Amol Singh, Kevin Daniels, Thomas Vogt, M. V. S. Chandrashekhar, and Goutam Koley. "Impedance spectroscopic analysis of nanoparticle functionalized graphene/p-Si Schottky diode sensors." Japanese Journal of Applied Physics 55, no. 11 (October 21, 2016): 110312. http://dx.doi.org/10.7567/jjap.55.110312.

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34

Kırsoy, A., M. Ahmetoglu, M. Okutan, and F. Yakuphanoglu. "Electrical Properties Inorganic-on-Organic Hybrid GaAs/Graphene Oxide Schottky Barrier Diode." Journal of Nanoelectronics and Optoelectronics 11, no. 1 (February 1, 2016): 108–14. http://dx.doi.org/10.1166/jno.2016.1884.

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35

Seol, Jeong-Hoon, Sang-Bum Kang, Chang-Ju Lee, Chul-Ho Won, Hongsik Park, Jung-Hee Lee, and Sung-Ho Hahm. "Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands." IEEE Sensors Journal 16, no. 18 (September 2016): 6903–7. http://dx.doi.org/10.1109/jsen.2016.2594185.

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36

Khurelbaatar, Zagarzusem, Yeon-Ho Kil, Hyung-Joong Yun, Kyu-Hwan Shim, Jung Tae Nam, Keun-Soo Kim, Sang-Kwon Lee, and Chel-Jong Choi. "Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer." Journal of Alloys and Compounds 614 (November 2014): 323–29. http://dx.doi.org/10.1016/j.jallcom.2014.06.132.

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37

Efil Kutluoğlu, Esra, Elif Öz Orhan, Özkan Bayram, and Sema Bilge Ocak. "Gamma-ray irradiation effects on capacitance and conductance of graphene-based Schottky diode." Physica B: Condensed Matter 621 (November 2021): 413306. http://dx.doi.org/10.1016/j.physb.2021.413306.

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Kutluoğlu, Esra Efil, Elif Öz Orhan, Adem Tataroğlu, and Özkan Bayram. "Double-exponential current-voltage (I-V) behavior of bilayer graphene-based Schottky diode." Physica Scripta 96, no. 12 (October 14, 2021): 125836. http://dx.doi.org/10.1088/1402-4896/ac2af5.

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39

Kiat, Wong King, Razali Ismail, and M. Taghi Ahmadi. "Contact Effect on the Current–Voltage Characteristic of Graphene Nanoribbon Based Schottky Diode." Journal of Computational and Theoretical Nanoscience 12, no. 3 (March 1, 2015): 478–83. http://dx.doi.org/10.1166/jctn.2015.3756.

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40

Nourbakhsh, Amirhasan, Mirco Cantoro, Afshin Hadipour, Tom Vosch, Marleen H. van der Veen, Marc M. Heyns, Bert F. Sels, and Stefan De Gendt. "Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode." Applied Physics Letters 97, no. 16 (October 18, 2010): 163101. http://dx.doi.org/10.1063/1.3495777.

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41

Abd Rahman, Shaharin Fadzli, Nurul Anati Salleh, Mastura Shafinaz Zainal Abidin, and Amirjan Nawabjan. "Humidity effect on electrical properties of graphene oxide back-to-back Schottky diode." TELKOMNIKA (Telecommunication Computing Electronics and Control) 17, no. 5 (October 1, 2019): 2427. http://dx.doi.org/10.12928/telkomnika.v17i5.12800.

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42

Lee, Hwauk, Namhyun An, Seockjin Jeong, Soonhong Kang, Soonki Kwon, Jisu Lee, Youngmin Lee, Deuk Young Kim, and Sejoon Lee. "Strong dependence of photocurrent on illumination-light colors for ZnO/graphene Schottky diode." Current Applied Physics 17, no. 4 (April 2017): 552–56. http://dx.doi.org/10.1016/j.cap.2017.02.001.

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43

Zhu, Miao, Xinming Li, Sunki Chung, Liyun Zhao, Xiao Li, Xiaobei Zang, Kunlin Wang, et al. "Photo-induced selective gas detection based on reduced graphene oxide/Si Schottky diode." Carbon 84 (April 2015): 138–45. http://dx.doi.org/10.1016/j.carbon.2014.12.008.

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44

Hong, Sang-Hyun, and Jang-Won Kang. "Plasmonic Enhancement of UV Photoresponse in Graphene/ZnO Schottky Diode with Pt Nanoparticles." Applied Science and Convergence Technology 31, no. 6 (October 4, 2022): 133–36. http://dx.doi.org/10.5757/asct.2022.31.6.133.

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45

Biswas, Md Rokon Ud Dowla, and Won-Chun Oh. "Comparative study on gas sensing by a Schottky diode electrode prepared with graphene–semiconductor–polymer nanocomposites." RSC Advances 9, no. 20 (2019): 11484–92. http://dx.doi.org/10.1039/c9ra00007k.

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Анотація:
This paper studies the performance of a gas sensor based on an organic/inorganic diode for ammonia (NH3), nitrogen (N2) & oxygen (O2) sensing under atmospheric conditions at room temperature and different humidity levels.
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46

Chaliyawala, Harsh A., Suresh Vemuri, Kashinath Lellala, and Indrajit Mukhopadhyay. "Role of surface passivation on the development of camphor based Graphene/SiNWAs schottky diode." Materials Today: Proceedings 45 (2021): 3789–94. http://dx.doi.org/10.1016/j.matpr.2021.01.283.

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47

Mat Hussin, Mohd Rofei, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, H. Y. Wong, and Mukter Zaman. "Fabrication and Characterization of Graphene-on-Silicon Schottky Diode for Advanced Power Electronic Design." Sains Malaysiana 46, no. 7 (July 31, 2017): 1147–54. http://dx.doi.org/10.17576/jsm-2017-4607-18.

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48

Islam, Muhammad R., Daeha Joung, and Saiful I. Khondaker. "Schottky diode via dielectrophoretic assembly of reduced graphene oxide sheets between dissimilar metal contacts." New Journal of Physics 13, no. 3 (March 23, 2011): 035021. http://dx.doi.org/10.1088/1367-2630/13/3/035021.

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49

Adhikari, Subash, Chandan Biswas, Manh-Ha Doan, Sung-Tae Kim, Chandramouli Kulshreshtha, and Young Hee Lee. "Minimizing Trap Charge Density towards an Ideal Diode in Graphene–Silicon Schottky Solar Cell." ACS Applied Materials & Interfaces 11, no. 1 (December 18, 2018): 880–88. http://dx.doi.org/10.1021/acsami.8b18140.

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50

Das, Mrinmay, Joydeep Datta, Animesh Biswas, Soumi Halder, and Partha Pratim Ray. "Enhanced charge transport properties of rGO-TiO2 based Schottky diode by tuning graphene content." Materials Today: Proceedings 11 (2019): 776–81. http://dx.doi.org/10.1016/j.matpr.2019.03.042.

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