Готові списки джерел за темами / Graphene Schottky Diode

Добірка наукової літератури з теми "Graphene Schottky Diode"

Автор: Grafiati

Опубліковано: 14 березня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Зміст

Статті в журналах
Дисертації
Частини книг
Тези доповідей конференцій

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Graphene Schottky Diode".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "Graphene Schottky Diode"

Rahmani, Meisam, Razali Ismail, Mohammad Taghi Ahmadi, Mohammad Javad Kiani, Mehdi Saeidmanesh, F. A. Hediyeh Karimi, Elnaz Akbari, and Komeil Rahmani. "The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance." Journal of Nanomaterials 2013 (2013): 1–8. http://dx.doi.org/10.1155/2013/636239.

Повний текст джерела

Анотація:

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ashour, A., M. Saqr, M. AbdelKarim, A. Gamal, A. Sharaf, and M. Serry. "Schottky Diode Graphene Based Sensors." International Journal on Smart Sensing and Intelligent Systems 7, no. 5 (2020): 1–4. http://dx.doi.org/10.21307/ijssis-2019-097.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Mohd Saman, Rahimah, Sharaifah Kamariah Wan Sabli, Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Haniff, and Mohd Ismahadi Syono. "High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications." Applied Sciences 9, no. 8 (April 17, 2019): 1587. http://dx.doi.org/10.3390/app9081587.

Повний текст джерела

Анотація:

Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

Стилі APA, Harvard, Vancouver, ISO та ін.

Labed, Madani, Nouredine Sengouga та You Seung Rim. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer". Nanomaterials 12, № 5 (1 березня 2022): 827. http://dx.doi.org/10.3390/nano12050827.

Повний текст джерела

Анотація:

Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, and in the series resistance (RS), from 60.3 to 2.90 mΩ.cm2. However, the saturation current (JS) increased from 1.26×10−11 to 8.3×10−7(A/cm2). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky–Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.

Стилі APA, Harvard, Vancouver, ISO та ін.

Shtepliuk, Ivan, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, and Rositsa Yakimova. "Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals." Beilstein Journal of Nanotechnology 7 (November 22, 2016): 1800–1814. http://dx.doi.org/10.3762/bjnano.7.173.

Повний текст джерела

Анотація:

A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

Dub, Maksym, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Maciej Sakowicz, Paweł Prystawko, Jacek Kacperski, et al. "Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures." Materials 13, no. 18 (September 17, 2020): 4140. http://dx.doi.org/10.3390/ma13184140.

Повний текст джерела

Анотація:

Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold current in the sub-picoamperes range. The effective trap density responsible for the 1/f low-frequency noise was found within the range of (1–5) · 1019 eV−1 cm−3. These values are of the same order of magnitude as reported earlier and in AlGaN/GaN transistors with Ni/Au Schottky gate studied as a reference in the current study. A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene.

Стилі APA, Harvard, Vancouver, ISO та ін.

Seven, Elanur, Elif Öz Orhan, and Sema Bilge Ocak. "Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation." Physica Scripta 96, no. 12 (November 15, 2021): 125852. http://dx.doi.org/10.1088/1402-4896/ac369f.

Повний текст джерела

Анотація:

Abstract The present work intends to discover the influences of 60Co gamma (γ) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range −6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequency. The experimental results showed that dielectric features of the structure are dependent on the radiation dose and applied voltage and to be a strong function of frequency.

Стилі APA, Harvard, Vancouver, ISO та ін.

Selvi, Hakan, Nawapong Unsuree, Eric Whittaker, Matthew P. Halsall, Ernie W. Hill, Andrew Thomas, Patrick Parkinson, and Tim J. Echtermeyer. "Towards substrate engineering of graphene–silicon Schottky diode photodetectors." Nanoscale 10, no. 7 (2018): 3399–409. http://dx.doi.org/10.1039/c7nr09591k.

Повний текст джерела

Анотація:

We present a systematic study of the performance of graphene–silicon Schottky diode photodetectors under varying operating conditions, demonstrating the influence of the substrate and interfacial oxide layer.

Стилі APA, Harvard, Vancouver, ISO та ін.

Selvi, Hakan, Ernie W. Hill, Patrick Parkinson, and Tim J. Echtermeyer. "Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors." Nanoscale 10, no. 40 (2018): 18926–35. http://dx.doi.org/10.1039/c8nr05285a.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Luo, Lin-Bao, Shun-Hang Zhang, Rui Lu, Wei Sun, Qun-Ling Fang, Chun-Yan Wu, Ji-Gang Hu, and Li Wang. "p-type ZnTe:Ga nanowires: controlled doping and optoelectronic device application." RSC Advances 5, no. 18 (2015): 13324–30. http://dx.doi.org/10.1039/c4ra14096f.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Більше джерел

Дисертації з теми "Graphene Schottky Diode"

Yu, Hui-Chen, and 游輝震. "Si-doped Graphene Based Schottky Diode for Ammonia Gas Sensing." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/mpy7nr.

Повний текст джерела

Анотація:

碩士
國立臺灣科技大學
材料科學與工程系
106
This study is divided into three parts. The first part is to grow silicon-doped graphene by chemical vapor deposition using polydimethylsilane precursor by the heating belt melted. Graphene films were analyzed by Raman spectroscopy, UV-vis spectroscopy, and X-ray phototeletron spectroscopy. In the Raman spectrum, it can be found that there are differences between pure graphene (PG) and Si-doped graphene (SiG). The D band intensity for SiG is higher than for PG and the G band for SiG has a G' branch side. These differences in Raman spectra can be attributed to defects in lattice-deformed graphene. The second part focuses on the response of graphene Schottky device to ammonia gas. PG and SiG are applied to PG/n-Si and SiG/n-Si Schottky diodes and placed in a self-made vacuum chamber to dilute ammonia gas to measure their gas sensing effect. The I-V curves were measured under dark in a vacuum chamber at room temperature. The Schottky barrier height of the PG/n-Si and SiG/n-Si Schottky device were calculated by the thermionic emission theory were 0.735 eV and 0.750 eV, respectively. The Schottky devices were further placed into ammonia gas environment with different concentrations for dynamic and static analysis. The Schottky barrier height of the two devices increased slightly when the NH3 gas was changed from high to low concentrations. PG/n-Si Schottky device has a response of about 7.3% at a high concentration of 500 ppm and a response of about 1.5% at a low concentration of 5 ppm in dynamic response measurement; SiG/n-Si Schottky device has a responsivity of approximately 11% at a high concentration of 500 ppm and a responsivity of approximately 2% at a low concentration. For quantitative dynamic cycle analysis with NH3 of 5 ppm to 10 ppm, the response time and recovery time were observed to be 238 s and 229 s, and the response was 5.4% for the SiG/n-Si. The response for PG/n-Si is around 3.4%. Consequently, SiG/n-Si device has a good response to NH3 then the PG/n-Si. For the third part, we analyze sensor response under UV and IR ligh. From the experimental results, the light irradiation hinders the adsorption of ammonia gas to the device, resulting in a large decrease in the responsiveness of the component and an increase in the response time.

Стилі APA, Harvard, Vancouver, ISO та ін.

Fu, Chuen-Yen, and 傅傳岩. "Graphene/silicon Schottky diode gas sensors decorated with noble metal nanoparticles." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/18395090222743579250.

Повний текст джерела

Анотація:

碩士
國立臺灣大學
物理研究所
102
In this thesis, we utilize the special electrical properties and high surface of graphene for the gas sensing application. Graphene prepared by chemical vapor deposition(CVD) was transferred on the patterned silicon substrate in order to form Schottky barrier diode. The thermionic theory was implemented to discuss the gas sensing mechanism. It is found that the work function of graphene is changed when the molecules of target gas were adsorbed on graphene surface. This behavior changes the Schottky barrier height between the interface of graphene and silicon as well as the electric properties of the device. Accordingly, the magnitude of the current reveals the concentration of target gas. Furthermore, to enhance the adsorption ability of graphene, its surface is decorated by gold or platinum. It is found that the fabricated devices can serve as a highly sensitive gas sensor because the noble metals decorated on graphene surface can enhance the interaction between graphene and gas molecules. This research is therefore helpful for the application of graphene in biosensors and gas sensors.

Стилі APA, Harvard, Vancouver, ISO та ін.

CHEN, KUAN YU, and 陳冠宇. "To study on graphene-like schottky diode device made from soybean oil or waste oil." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/u98je5.

Повний текст джерела

Анотація:

碩士
東海大學
電機工程學系
106
In this research, soybean oil and wasted engine oil are made into graphene-like materials by high-temperature rapid annealing system, and nickel and nickel films are used as catalysts. Moreover, this research uses different oil quantities as carbon sources. The samples with semiconductor behavior in the above conditions are made into the research of the Schottky diode. In the first research, different amount of used engine oil are heated at 800 degree C in a high temperature rapid thermal annealing system, with a nickel plate. Some region of samples in 0.1g and 0.2g oil are found to have the semiconductor behavior and the characteristics of the graphite-like. In the second research, different amount of soybean oil are heated at 800 degree C in a high temperature rapid thermal annealing system, with a nickel plate. It was found that the components in the used oil will affect the characteristics of the sample. The third study used different oils of soybean oil and waste engine oil in a high-temperature rapid annealing system for 800 ° C heating in the atmosphere. With nickel film, we found that samples with a sample of 0.05g oil have semiconductor and graphite-like behaviors. The fourth research is to use sputtering metal method on the semiconductor behavior samples under above conditions to make MS diode for measurement. Some samples have good IV and CV curves. However, a few samples are presumed to be broken when graphene-like is stripped from the nickel sheet by tape. As the result, the characteristics of these MS diode are not observed.

Стилі APA, Harvard, Vancouver, ISO та ін.

林建煌. "Fabrication and characterization of graphene/n-type Si Schottky diodes." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/x7c326.

Повний текст джерела

Анотація:

碩士
國立彰化師範大學
光電科技研究所
102
Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diodes were treated by annealing. The current–voltage characteristics in the temperature range of -120 oC ~ 30 oC were analyzed on the basis of thermionic emission theory. Through the analysis, it can be suspected that a SiOX layer at the graphene/n-type Si interfaces influences the electronic conduction through the device and stoichiometry of SiOX is affected by annealing treatment. It is found that both Schottky barrier inhomogeneity and the T0 effect are affected by annealing treatment, implying that stoichiometry of SiOX has a noticeable effect on the inhomogeneous barriers of graphene/n-type Si Schottky diodes. In addition, some of the n-type Si samples were dipped in the H2O2 solution at 60 oC for 10 min (referred to as H2O2-treated n-type Si samples). The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. However, the graphene/H2O2-treated n-type Si Schottky diode shows a good rectifying behavior with η of 1.9 and low leakage. We believe the inhomogeneous Schottky barrier height has a relation to interface states; and, such result can be attributed to a nonstoichiometric SiOX layer at the graphene/n-type Si interface.

Стилі APA, Harvard, Vancouver, ISO та ін.

Частини книг з теми "Graphene Schottky Diode"

Bandyopadhyay, Dipan, and Subir Kumar Sarkar. "Graphene Nano-Ribbon Based Schottky Barrier Diode as an Electric Field Sensor." In Computational Intelligence in Data Mining - Volume 2, 483–91. New Delhi: Springer India, 2014. http://dx.doi.org/10.1007/978-81-322-2208-8_44.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Mahala, Pramila, Ankita Dixit, and Navneet Gupta. "Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements." In Lecture Notes in Electrical Engineering, 583–89. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-2553-3_57.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Wang, Y., M. K. Mikhov, and B. J. Skromme. "Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation." In Silicon Carbide and Related Materials 2005, 915–18. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.915.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Crisci, Teresa, Luigi Moretti, Mariano Gioffrè, and Maurizio Casalino. "Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials." In Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.99625.

Повний текст джерела

Анотація:

Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.

Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "Graphene Schottky Diode"

Kiat, Wong King, Razali Ismail, and M. Taghi Ahmadi. "Schottky barrier lowering effect on graphene nanoribbon based schottky diode." In 2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2013. http://dx.doi.org/10.1109/rsm.2013.6706543.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Shi-Jun Liang and Lay Kee Ang. "Discovery of fundamental Graphene/Semiconductor Schottky diode equation." In 2015 IEEE International Vacuum Electronics Conference (IVEC). IEEE, 2015. http://dx.doi.org/10.1109/ivec.2015.7223737.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Rahmani, Meisam, Mohammad Taghi Ahmadi, Nahid Shayesteh, Noraliah Aziziah Amin, Komeil Rahmani, and Razali Ismail. "Current-voltage modeling of Bilayer Graphene Nanoribbon Schottky Diode." In 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2011. http://dx.doi.org/10.1109/rsm.2011.6088337.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Uddin, M. A., A. K. Singh, K. M. Daniels, M. V. S. Chandrashekhar, and G. Koley. "Impedance spectroscopic analysis of Functionalized Graphene/silicon Schottky Diode sensor." In TRANSDUCERS 2015 - 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2015. http://dx.doi.org/10.1109/transducers.2015.7181190.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Mirsadeghi, Seyed Mohammad, Shayan Valijam, and Alireza Salehi. "Electrical Simulation of SiC/Ge Schottky Diode with Graphene Contact." In 2019 27th Iranian Conference on Electrical Engineering (ICEE). IEEE, 2019. http://dx.doi.org/10.1109/iraniancee.2019.8786471.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Polichetti, Tiziana, Filiberto Ricciardella, Filippo Fedi, Maria Lucia Miglietta, Riccardo Miscioscia, Ettore Massera, Girolamo Di Francia, et al. "Graphene-Si Schottky diode in environmental conditions at low NH3 ppm level." In 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2014. http://dx.doi.org/10.1109/nmdc.2014.6997412.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Kaur, Amanpreet, Xianbo Yang, Kyoung Youl Park, and Premjeet Chahal. "Reduced graphene oxide based Schottky diode on flex substrate for microwave circuit applications." In 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC). IEEE, 2013. http://dx.doi.org/10.1109/ectc.2013.6575700.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Nigro, Maria Arcangela, Giuliana Faggio, Filippo Fedi, Tiziana Polichetti, Maria Lucia Miglietta, Ettore Massera, Girolamo Di Francia, and Filiberto Ricciardella. "Cross interference effects between water and NH3 on a sensor based on graphene/silicon Schottky diode." In 2015 XVIII AISEM Annual Conference. IEEE, 2015. http://dx.doi.org/10.1109/aisem.2015.7066854.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

He, Piaopiao, Zhangfu Chen, Lianqiao Yang, Jianhua Zhang, Luqiao Yin, and Tingting Nan. "Performance enhancement of merge pin schottky diode with graphene films as heat sink by ANSYS simulation." In 2016 13th China International Forum on Solid State Lighting (SSLChina). IEEE, 2016. http://dx.doi.org/10.1109/sslchina.2016.7804354.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Uddin, M. S., and K. Ueno. "Fabrication of a Schottky Diode with Direct Deposition of Multilayer Graphene on n-GaN by Solid Phase Reaction." In 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.k-4-04.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!