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Статті в журналах з теми "Graphene pn junction"

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Автор: Grafiati

Опубліковано: 6 вересня 2023

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1

Milovanović, S. P., M. Ramezani Masir, and F. M. Peeters. "Bilayer graphene Hall bar with a pn-junction." Journal of Applied Physics 114, no. 11 (September 21, 2013): 113706. http://dx.doi.org/10.1063/1.4821264.

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2

Tian, HongYu, and Jun Wang. "Spatial valley separation in strained graphene pn junction." Journal of Physics: Condensed Matter 29, no. 38 (August 18, 2017): 385401. http://dx.doi.org/10.1088/1361-648x/aa8251.

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3

Milovanović, S. P., M. Ramezani Masir, and F. M. Peeters. "Graphene Hall bar with an asymmetric pn-junction." Journal of Applied Physics 113, no. 19 (May 21, 2013): 193701. http://dx.doi.org/10.1063/1.4805350.

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4

Wang, Xitong, Lihong Su, Yuefei Li, Fengxia Yang, Ziao Zou, Mujia Tao, Ze Song, et al. "Graphene–MCN pn-junction for ultrafast flexible ultraviolet detector." MRS Communications 11, no. 6 (November 1, 2021): 862–67. http://dx.doi.org/10.1557/s43579-021-00109-w.

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5

Van Duppen, B., and F. M. Peeters. "Klein paradox for a pn junction in multilayer graphene." EPL (Europhysics Letters) 102, no. 2 (April 1, 2013): 27001. http://dx.doi.org/10.1209/0295-5075/102/27001.

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6

Yamakage, A., K. I. Imura, J. Cayssol, and Y. Kuramoto. "Spin-orbit effects in a graphene bipolar pn junction." EPL (Europhysics Letters) 87, no. 4 (August 1, 2009): 47005. http://dx.doi.org/10.1209/0295-5075/87/47005.

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7

Ali, Asif, So-Young Kim, Muhammad Hussain, Syed Hassan Abbas Jaffery, Ghulam Dastgeer, Sajjad Hussain, Bach Thi Phuong Anh, Jonghwa Eom, Byoung Hun Lee, and Jongwan Jung. "Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction." Nanomaterials 11, no. 11 (November 9, 2021): 3003. http://dx.doi.org/10.3390/nano11113003.

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Анотація:

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O2, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N2 gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O2 showed ~15% de-doping over 4 months. The n-type doping in pure N2 exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.

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8

Yang, Wan-Ting, Lin-Zheng Guo, Yi-Ting Shih, Shunjiro Fujii, Shin-ichi Honda, Huan-Chun Wang, Pao-Hung Lin, and Kuei-Yi Lee. "Characteristics of pn junction diode made of multi-layer graphene." Japanese Journal of Applied Physics 59, no. 1 (December 13, 2019): 015003. http://dx.doi.org/10.7567/1347-4065/ab58ee.

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9

Morikawa, Sei, Satoru Masubuchi, Rai Moriya, Kenji Watanabe, Takashi Taniguchi, and Tomoki Machida. "Edge-channel interferometer at the graphene quantum Hall pn junction." Applied Physics Letters 106, no. 18 (May 4, 2015): 183101. http://dx.doi.org/10.1063/1.4919380.

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10

Miryala, Sandeep, Matheus Oleiro, Letícia Maria Bolzani Pöhls, Andrea Calimera, Enrico Macii, and Massimo Poncino. "Modeling of Physical Defects in PN Junction Based Graphene Devices." Journal of Electronic Testing 30, no. 3 (June 2014): 357–70. http://dx.doi.org/10.1007/s10836-014-5458-4.

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11

Sohier, Thibault, and Bin Yu. "Ultralow-voltage design of graphene PN junction quantum reflective switch transistor." Applied Physics Letters 98, no. 21 (May 23, 2011): 213104. http://dx.doi.org/10.1063/1.3593956.

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12

Grushina, Anya L., Dong-Keun Ki, and Alberto F. Morpurgo. "A ballistic pn junction in suspended graphene with split bottom gates." Applied Physics Letters 102, no. 22 (June 3, 2013): 223102. http://dx.doi.org/10.1063/1.4807888.

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13

Takane, Yositake, and Akinobu Kanda. "Andreev reflection in a proximity junction of graphene: Influence of a naturally formed pn junction." Journal of Physics: Conference Series 969 (March 2018): 012155. http://dx.doi.org/10.1088/1742-6596/969/1/012155.

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14

Li, Cheng, Zijin Pan, Weiquan Hao, Xunyu Li, Runyu Miao, and Albert Wang. "Graphene-Based ESD Protection for Future ICs." Nanomaterials 13, no. 8 (April 20, 2023): 1426. http://dx.doi.org/10.3390/nano13081426.

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Анотація:

On-chip electrostatic discharge (ESD) protection is required for all integrated circuits (ICs). Conventional on-chip ESD protection relies on in-Si PN junction-based device structures for ESD. However, such in-Si PN-based ESD protection solutions pose significant challenges related to ESD protection design overhead, including parasitic capacitance, leakage current, and noises, as well as large chip area consumption and difficulty in IC layout floor planning. The design overhead effects of ESD protection devices are becoming unacceptable to modern ICs as IC technologies continuously advance, which is an emerging design-for-reliability challenge for advanced ICs. In this paper, we review the concept development of disruptive graphene-based on-chip ESD protection comprising a novel graphene nanoelectromechanical system (gNEMS) ESD switch and graphene ESD interconnects. This review discusses the simulation, design, and measurements of the gNEMS ESD protection structures and graphene ESD protection interconnects. The review aims to inspire non-traditional thinking for future on-chip ESD protection.

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15

Wang, Jie, Zijia Zhang, and Hailei Zhao. "SnS₂–SnS pn hetero-junction bonded on graphene with boosted charge transfer for lithium storage." Nanoscale 13, no. 48 (2021): 20481–87. http://dx.doi.org/10.1039/d1nr05438d.

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16

Rajeswari Yogamalar, N., K. Sadhanandam, A. Chandra Bose, and R. Jayavel. "Quantum confined CdS inclusion in graphene oxide for improved electrical conductivity and facile charge transfer in hetero-junction solar cell." RSC Advances 5, no. 22 (2015): 16856–69. http://dx.doi.org/10.1039/c4ra13061h.

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17

Xu, Yifan, Ranran Zhang, Jun Qian, Hongyan Wang, Peng Wang, and Shuangli Ye. "Tuned magnetic properties of Co-doped ZnO/B-doped graphene PN junction." Materials & Design 149 (July 2018): 81–86. http://dx.doi.org/10.1016/j.matdes.2018.03.058.

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18

Xu, X. G., S. Sultan, C. Zhang, and J. C. Cao. "Nonlinear optical conductance in a graphene pn junction in the terahertz regime." Applied Physics Letters 97, no. 1 (July 5, 2010): 011907. http://dx.doi.org/10.1063/1.3462972.

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19

Castilla, Sebastián, Bernat Terrés, Marta Autore, Leonardo Viti, Jian Li, Alexey Y. Nikitin, Ioannis Vangelidis, et al. "Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction." Nano Letters 19, no. 5 (March 18, 2019): 2765–73. http://dx.doi.org/10.1021/acs.nanolett.8b04171.

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20

Yang Cuihong, 杨翠红, 王. 璐. Wang Lu, 陈云云 Chen Yunyun, and 雷. 勇. Lei Yong. "Optical Absorption Property of Graphene PN Junction Modulated by Voltage in Terahertz Region." Laser & Optoelectronics Progress 54, no. 11 (2017): 112601. http://dx.doi.org/10.3788/lop54.112601.

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21

Iqbal, Muhammad Zahir, Abbas Khan, Sana Khan, Nadia Anwar, Syed Shabhi Haider, Mian Muhammad Faisal, Muhammad Waqas Iqbal, Adnan Ali, Javed Iqbal, and Muhammad Javaid Iqbal. "Formation of pn-Junction with Chemical Modification of Graphene-Hexagonal Boron Nitride Heterostructure." Journal of Nanoelectronics and Optoelectronics 14, no. 10 (October 1, 2019): 1427–33. http://dx.doi.org/10.1166/jno.2019.2572.

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22

Barbier, M., G. Papp, and F. M. Peeters. "Snake states and Klein tunneling in a graphene Hall bar with a pn-junction." Applied Physics Letters 100, no. 16 (April 16, 2012): 163121. http://dx.doi.org/10.1063/1.4704667.

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23

Milovanović, S. P., M. Ramezani Masir, and F. M. Peeters. "Interplay between snake and quantum edge states in a graphene Hall bar with a pn-junction." Applied Physics Letters 105, no. 12 (September 22, 2014): 123507. http://dx.doi.org/10.1063/1.4896769.

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24

Yang, Mou, Rui-Qiang Wang, and Yan-Kui Bai. "Valley detection using a graphene gradual pn junction with spin–orbit coupling: An analytical conductance calculation." Physics Letters A 379, no. 30-31 (September 2015): 1732–36. http://dx.doi.org/10.1016/j.physleta.2015.04.043.

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25

Iqbal, Muhammad Zahir, Nadia Anwar, Salma Siddique, Muhammad Waqas Iqbal, and Tassadaq Hussain. "Formation of pn-junction with stable n-doping in graphene field effect transistors using e-beam irradiation." Optical Materials 69 (July 2017): 254–58. http://dx.doi.org/10.1016/j.optmat.2017.04.041.

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26

Chamanara, Nima, Dimitrios Sounas, Thomas Szkopek, and Christophe Caloz. "Terahertz magnetoplasmon energy concentration and splitting in Graphene PN Junctions." Optics Express 21, no. 21 (October 17, 2013): 25356. http://dx.doi.org/10.1364/oe.21.025356.

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27

Delgado-Notario, Juan A., Wojciech Knap, Vito Clericò, Juan Salvador-Sánchez, Jaime Calvo-Gallego, Takashi Taniguchi, Kenji Watanabe, et al. "Enhanced terahertz detection of multigate graphene nanostructures." Nanophotonics 11, no. 3 (January 3, 2022): 519–29. http://dx.doi.org/10.1515/nanoph-2021-0573.

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Анотація:

Abstract Terahertz (THz) waves have revealed a great potential for use in various fields and for a wide range of challenging applications. High-performance detectors are, however, vital for exploitation of THz technology. Graphene plasmonic THz detectors have proven to be promising optoelectronic devices, but improving their performance is still necessary. In this work, an asymmetric-dual-grating-gate graphene-terahertz-field-effect-transistor with a graphite back-gate was fabricated and characterized under illumination of 0.3 THz radiation in the temperature range from 4.5 K up to the room temperature. The device was fabricated as a sub-THz detector using a heterostructure of h-BN/Graphene/h-BN/Graphite to make a transistor with a double asymmetric-grating-top-gate and a continuous graphite back-gate. By biasing the metallic top-gates and the graphite back-gate, abrupt n+n (or p+p) or np (or pn) junctions with different potential barriers are formed along the graphene layer leading to enhancement of the THz rectified signal by about an order of magnitude. The plasmonic rectification for graphene containing np junctions is interpreted as due to the plasmonic electron-hole ratchet mechanism, whereas, for graphene with n+n junctions, rectification is attributed to the differential plasmonic drag effect. This work shows a new way of responsivity enhancement and paves the way towards new record performances of graphene THz nano-photodetectors.

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28

Chen Dong-Hai, Yang Mou, Duan Hou-Jian, and Wang Rui-Qiang. "Electronic transport properties of graphene pn junctions with spin-orbit coupling." Acta Physica Sinica 64, no. 9 (2015): 097201. http://dx.doi.org/10.7498/aps.64.097201.

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29

Low, Tony, and Mark S. Lundstrom. "Electronic Transport Properties of Graphene pn Junctions and Its Electron Optics." ECS Transactions 28, no. 5 (December 17, 2019): 45–48. http://dx.doi.org/10.1149/1.3367935.

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30

Braatz, Marie-Luise, Nils-Eike Weber, Barthi Singh, Klaus Müllen, Xinliang Feng, Mathias Kläui, and Martin Gradhand. "Doped graphene characterized via Raman spectroscopy and magneto-transport measurements." Journal of Applied Physics 133, no. 2 (January 14, 2023): 025304. http://dx.doi.org/10.1063/5.0117677.

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Анотація:

Functionalizing graphene beyond its intrinsic properties has been a key concept since the first successful realization of this archetype monolayer system. While various concepts, such as doping, co-doping, and layered device design, have been proposed, the often complex structural and electronic changes are often jeopardizing simple functionalization attempts. Here, we present a thorough analysis of the structural and electronic properties of co-doped graphene via Raman spectroscopy as well as magneto-transport and Hall measurements. The results highlight the challenges in understanding its microscopic properties beyond the simple preparation of such devices. It is discussed how co-doping with N and B dopants leads to effective charge-neutral defects acting as short-range scatterers, while charged defects introduce more long-range scattering centers. Such distinct behavior may obscure or alter the desired structural as well as electronic properties not anticipated initially. Exploring further the preparation of effective pn-junctions, we highlight step by step how the preparation process may lead to alterations in the intrinsic properties of the individual layers. Importantly, it is highlighted in all steps how the inhomogeneities across individual graphene sheets may challenge simple interpretations of individual measurements.

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31

Xie, Shihong, Mustaqeem Shiffa, Mujahid Shiffa, Zakhar R. Kudrynskyi, Oleg Makarovskiy, Zakhar D. Kovalyuk, Wenkai Zhu, Kaiyou Wang, and Amalia Patanè. "Van der Waals interfaces in multilayer junctions for ultraviolet photodetection." npj 2D Materials and Applications 6, no. 1 (September 8, 2022). http://dx.doi.org/10.1038/s41699-022-00338-0.

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AbstractDevelopments in semiconductor science have led to the miniaturization and improvement of light detection technologies for many applications. However, traditional pn-junctions or three-dimensional device geometries for detection of ultraviolet (UV) light are still limited by the physical properties of the semiconductors used, such as the small penetration depth of UV light in silicon. Van der Waals (vdW) semiconductors and their pn-junctions can offer an alternative solution due to their optical properties and thin pn-junction region. Here, we report on a multi-layer junction that combines single layer graphene and vdW semiconductors (p-GaSe and n-In2Se3) with strong optical absorption in the UV range. The junctions have broadband spectral response (0.3-1.0 μm) and high photoresponsivity under forward and reverse bias, or without any externally applied voltage. The photoresponse differs from that of a traditional pn-junction diode as it is governed by charge transport across thin layers and light-current conversion at three vdW interfaces (e.g. the graphene/GaSe, GaSe/In2Se3 and In2Se3/graphene interfaces). The type-II band alignment at the GaSe/In2Se3 interface and electric field at the three vdW interfaces are beneficial to suppress carrier recombination for enhanced photoresponsivity (up to ~102 A/W) and detectivity (up to ~1013 Jones), beyond conventional UV-enhanced silicon detection technology.

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32

Flór, I. M., A. Lacerda-Santos, G. Fleury, P. Roulleau, and X. Waintal. "Positioning of edge states in a quantum Hall graphene pn junction." Physical Review B 105, no. 24 (June 22, 2022). http://dx.doi.org/10.1103/physrevb.105.l241409.

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33

Li, Jiaqi, Zebin Li, Sheng Xie, Yue Su, and Xurui Mao. "Monolithic Heterogeneous Integration of Si Photodetector and Van Der Waals Heterojunction with Photocurrent Enhancement." Nano Express, March 3, 2023. http://dx.doi.org/10.1088/2632-959x/acc11b.

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Abstract Two-dimensional material has many novel features, which can be used to significantly improve the performance of traditional photonic and electronic devices. Therefore, the development of silicon/two-dimensional material monolithic heterogeneous integrated photodetector has attracted extensive attention worldwide. In this paper, we present a method to enhance the response of photocurrent of silicon-based PN junction photodetectors by using two-dimensional material Van der Waals heterostructures. The MoS2/graphene/N+ silicon monolithic heterogeneous integrated Van der Waals heterostructure is used as an NPN-type phototransistor to realize the amplification of photocurrent. When the device is irradiated, the photogenerated electron hole pairs in the semiconductor are separated by the applied electric field. However, graphene has a low density of defect states, and only a few electrons from N+ silicon can be recombined in graphene. Meanwhile, the graphene layer is very thin, and the positively biased graphene/N+ silicon junction and reversed-biased MoS2/graphene junction will accelerate the electrons to across the graphene layer and directly into MoS2. Using MXenes as the contact electrode of the MoS2 can eliminate the Fermi level pinning effect. The experimental results show that the photoresponsivity and photocurrent gain increase with the bias voltage, in the range of 0 to 5V bias voltage. And the optical Ion/Ioff ratio increases by nearly 50 times. This research provides new insights for the detection of weak light and design for the photon computing device.

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34

Fräßdorf, Christian, Luka Trifunovic, Nils Bogdanoff, and Piet W. Brouwer. "Graphene pn junction in a quantizing magnetic field: Conductance at intermediate disorder strength." Physical Review B 94, no. 19 (November 28, 2016). http://dx.doi.org/10.1103/physrevb.94.195439.

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35

Zhang, Xi, Wei Ren, Elliot Bell, Ziyan Zhu, Kan-Ting Tsai, Yujie Luo, Kenji Watanabe, et al. "Gate-tunable Veselago interference in a bipolar graphene microcavity." Nature Communications 13, no. 1 (November 7, 2022). http://dx.doi.org/10.1038/s41467-022-34347-w.

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AbstractThe relativistic charge carriers in monolayer graphene can be manipulated in manners akin to conventional optics. Klein tunneling and Veselago lensing have been previously demonstrated in ballistic graphene pn-junction devices, but collimation and focusing efficiency remains relatively low, preventing realization of advanced quantum devices and controlled quantum interference. Here, we present a graphene microcavity defined by carefully-engineered local strain and electrostatic fields. Electrons are manipulated to form an interference path inside the cavity at zero magnetic field via consecutive Veselago refractions. The observation of unique Veselago interference peaks via transport measurement and their magnetic field dependence agrees with the theoretical expectation. We further utilize Veselago interference to demonstrate localization of uncollimated electrons and thus improvement in collimation efficiency. Our work sheds new light on relativistic single-particle physics and provide a new device concept toward next-generation quantum devices based on manipulation of ballistic electron trajectory.

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36

Trifunovic, Luka, and Piet W. Brouwer. "Valley isospin of interface states in a graphene pn junction in the quantum Hall regime." Physical Review B 99, no. 20 (May 23, 2019). http://dx.doi.org/10.1103/physrevb.99.205431.

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37

Jo, M., June-Young M. Lee, A. Assouline, P. Brasseur, K. Watanabe, T. Taniguchi, P. Roche, et al. "Scaling behavior of electron decoherence in a graphene Mach-Zehnder interferometer." Nature Communications 13, no. 1 (September 17, 2022). http://dx.doi.org/10.1038/s41467-022-33078-2.

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AbstractOver the past 20 years, many efforts have been made to understand and control decoherence in 2D electron systems. In particular, several types of electronic interferometers have been considered in GaAs heterostructures, in order to protect the interfering electrons from decoherence. Nevertheless, it is now understood that several intrinsic decoherence sources fundamentally limit more advanced quantum manipulations. Here, we show that graphene offers a unique possibility to reach a regime where the decoherence is frozen and to study unexplored regimes of electron interferometry. We probe the decoherence of electron channels in a graphene quantum Hall PN junction, forming a Mach-Zehnder interferometer1,2, and unveil a scaling behavior of decay of the interference visibility with the temperature scaled by the interferometer length. It exhibits a remarkable crossover from an exponential decay at higher temperature to an algebraic decay at lower temperature where almost no decoherence occurs, a regime previously unobserved in GaAs interferometers.

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38

Castilla, Sebastián, Ioannis Vangelidis, Varun-Varma Pusapati, Jordan Goldstein, Marta Autore, Tetiana Slipchenko, Khannan Rajendran, et al. "Plasmonic antenna coupling to hyperbolic phonon-polaritons for sensitive and fast mid-infrared photodetection with graphene." Nature Communications 11, no. 1 (September 25, 2020). http://dx.doi.org/10.1038/s41467-020-18544-z.

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Abstract Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for photodetection and sensing. The main challenge of infrared photodetectors is to funnel the light into a small nanoscale active area and efficiently convert it into an electrical signal. Here, we overcome all of those challenges in one device, by efficient coupling of a plasmonic antenna to hyperbolic phonon-polaritons in hexagonal-BN to highly concentrate mid-infrared light into a graphene pn-junction. We balance the interplay of the absorption, electrical and thermal conductivity of graphene via the device geometry. This approach yields remarkable device performance featuring room temperature high sensitivity (NEP of 82 pW$$/\sqrt{{\bf{Hz}}}$$ / Hz ) and fast rise time of 17 nanoseconds (setup-limited), among others, hence achieving a combination currently not present in the state-of-the-art graphene and commercial mid-infrared detectors. We also develop a multiphysics model that shows very good quantitative agreement with our experimental results and reveals the different contributions to our photoresponse, thus paving the way for further improvement of these types of photodetectors even beyond mid-infrared range.

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39

Liu, Xiaoyue, Pengwu Xu, Qinsheng Wang, Jin Wang, and Li Zaijun. "Ultra-Highly Dispersed Nb2o5-Graphene Quantum Dot-Graphene Hybrid with Pn Junction and Schottky Heterojunction as Promising Electrode Material for High-Energy Flexible Supercapacitor." SSRN Electronic Journal, 2022. http://dx.doi.org/10.2139/ssrn.4081007.

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40

Li, Yuan-Qiao, Xi-Rong Chen, Wei Luo, Tao Zhou, and Wei Chen. "Fabry-Pérot interference in 2D low-density Rashba gas." Europhysics Letters, February 9, 2022. http://dx.doi.org/10.1209/0295-5075/ac535d.

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Abstract In mesoscopic electronic systems, the Fabry-Pérot (FP) oscillation is observed in various 1D devices. As for higher dimensions, numerous transverse channels usually lead to dephasing that quenches the overall oscillation of the conductance. Up to now, the FP oscillation in 2D electronic systems is only reported in graphene-based devices and very recently, the pn junctions of inverted InAs/GaSb double quantum well [Phys. Rev. X 10, 031007 (2020)]. In the latter, the band shape of a sombrero hat plays an essential role, which introduces a novel mechanism of electron-hole hybridization for the 2D FP oscillation. In this work, we propose that such a scenario can be generalized to the 2D planar junction composed of low-density Rashba gas, where the band bottom possesses sombrero hat shape as well. We show that the backscattering between the outer and inner Fermi circles dominates the FP interference and signiﬁcantly suppresses the dephasing eﬀect between diﬀerent transverse channels, which leads to a visible oscillation of the tunneling conductance. Specially, the visibility of the oscillating pattern can be enhanced by applying interface barriers, which in contrast to that in the InAs/GaSb double quantum well. Our results provide a promising way for the implementation of the FP oscillation in the 2D electron gas.

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41

"(Invited) Graphene PN Junctions." ECS Meeting Abstracts, 2012. http://dx.doi.org/10.1149/ma2012-01/37/1373.

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42

"Invited Presentation: Logic Devices with Graphene PN Junctions." ECS Meeting Abstracts, 2014. http://dx.doi.org/10.1149/ma2014-01/33/1259.

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43

Matsuo, Sadashige, Shu Nakaharai, Katsuyoshi Komatsu, Kazuhito Tsukagoshi, Takahiro Moriyama, Teruo Ono, and Kensuke Kobayashi. "Parity effect of bipolar quantum Hall edge transport around graphene antidots." Scientific Reports 5, no. 1 (June 30, 2015). http://dx.doi.org/10.1038/srep11723.

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Abstract Parity effect, which means that even-odd property of an integer physical parameter results in an essential difference, ubiquitously appears and enables us to grasp its physical essence as the microscopic mechanism is less significant in coarse graining. Here we report a new parity effect of quantum Hall edge transport in graphene antidot devices with pn junctions (PNJs). We found and experimentally verified that the bipolar quantum Hall edge transport is drastically affected by the parity of the number of PNJs. This parity effect is universal in bipolar quantum Hall edge transport of not only graphene but also massless Dirac electron systems. These results offer a promising way to design electron interferometers in graphene.

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"Electronic Transport Properties of Graphene pn Junctions and Its Electron Optics Devices." ECS Meeting Abstracts, 2010. http://dx.doi.org/10.1149/ma2010-01/23/1201.

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Karakachian, Hrag, Philipp Rosenzweig, T. T. Nhung Nguyen, Bharti Matta, Alexei A. Zakharov, Rositsa Yakimova, Thiagarajan Balasubramanian, et al. "Periodic Nanoarray of Graphene pn‐Junctions on Silicon Carbide Obtained by Hydrogen Intercalation." Advanced Functional Materials, January 27, 2022, 2109839. http://dx.doi.org/10.1002/adfm.202109839.

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