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Автор: Grafiati
Опубліковано: 6 вересня 2023

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1

Fan, Yan, Tao Wang, Yinwei Qiu, Yinli Yang, Qiubo Pan, Jun Zheng, Songwei Zeng, Wei Liu, Gang Lou, and Liang Chen. "Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect." Molecules 26, no. 22 (November 13, 2021): 6849. http://dx.doi.org/10.3390/molecules26226849.

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Анотація:
Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.
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2

Indykiewicz, K., C. Bray, C. Consejo, F. Teppe, S. Danilov, S. D. Ganichev, and A. Yurgens. "Current-induced enhancement of photo-response in graphene THz radiation detectors." AIP Advances 12, no. 11 (November 1, 2022): 115009. http://dx.doi.org/10.1063/5.0117818.

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Thermoelectric readout in a graphene terahertz (THz) radiation detector requires a p- n junction across the graphene channel. Even without an intentional p- n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the proximity to the metal. In a symmetrical structure, these junctions are connected back-to-back and therefore counterbalance each other with regard to rectification of the ac signal. Because of the Peltier effect, a small dc current results in additional heating in one and cooling in another p- n junction, thereby breaking the symmetry. The p- n junctions then no longer cancel, resulting in a greatly enhanced rectified signal. This allows simplifying the design and controlling the sensitivity of THz radiation detectors.
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3

Low, Tony, Seokmin Hong, Joerg Appenzeller, Supriyo Datta, and Mark S. Lundstrom. "Conductance Asymmetry of Graphene p-n Junction." IEEE Transactions on Electron Devices 56, no. 6 (June 2009): 1292–99. http://dx.doi.org/10.1109/ted.2009.2017646.

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4

Liang, Jierui, Ke Xu, Swati Arora, Jennifer E. Laaser, and Susan K. Fullerton-Shirey. "Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions." Materials 13, no. 5 (March 1, 2020): 1089. http://dx.doi.org/10.3390/ma13051089.

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Анотація:
A gateless lateral p-n junction with reconfigurability is demonstrated on graphene by ion-locking using solid polymer electrolytes. Ions in the electrolytes are used to configure electric-double-layers (EDLs) that induce p- and n-type regions in graphene. These EDLs are locked in place by two different electrolytes with distinct mechanisms: (1) a polyethylene oxide (PEO)-based electrolyte, PEO:CsClO4, is locked by thermal quenching (i.e., operating temperature < Tg (glass transition temperature)), and (2) a custom-synthesized, doubly-polymerizable ionic liquid (DPIL) is locked by thermally triggered polymerization that enables room temperature operation. Both approaches are gateless because only the source/drain terminals are required to create the junction, and both show two current minima in the backgated transfer measurements, which is a signature of a graphene p-n junction. The PEO:CsClO4 gated p-n junction is reconfigured to n-p by resetting the device at room temperature, reprogramming, and cooling to T < Tg. These results show an alternate approach to locking EDLs on 2D devices and suggest a path forward to reconfigurable, gateless lateral p-n junctions with potential applications in polymorphic logic circuits.
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5

Jung, Min Wook, Woo Seok Song, Sung Myung, Jong Sun Lim, Sun Sook Lee, and Ki Seok An. "Formation of Graphene P-N Junction Arrays Using Soft-Lithographic Patterning and Cross-Stacking." Advanced Materials Research 1098 (April 2015): 63–68. http://dx.doi.org/10.4028/www.scientific.net/amr.1098.63.

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Анотація:
Two key issues in graphene-based p-n junction applications are the manipulation of the type and density of carrier in graphene and the development of a facile fabrication process. Here we reported the formation of graphene films with tunable carrier type by doping of ethoxylated polyethylenimine (PEIE) and Au nanoparticles (NPs). The carrier density of doped graphene can be tuned by altering the concentration of the dopant solutions. The doping effects of PEIE and Au NPs on graphene were monitored by resonant Raman spectroscopy and electrical transport measurements. Graphene p-n junction arrays were assembled by simple soft-lithographic patterning and cross-stacking of n-and p-type doped graphene films, showing a graphene p-n junction behavior with two VCNDP.
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6

Zhang, Shu-Hui, Jia-Ji Zhu, Wen Yang, and Kai Chang. "Focusing RKKY interaction by graphene P–N junction." 2D Materials 4, no. 3 (June 27, 2017): 035005. http://dx.doi.org/10.1088/2053-1583/aa76d2.

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7

Lv, Shu-Hui, Shu-Bo Feng, and Yu-Xian Li. "Thermopower and conductance for a graphene p–n junction." Journal of Physics: Condensed Matter 24, no. 14 (March 13, 2012): 145801. http://dx.doi.org/10.1088/0953-8984/24/14/145801.

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8

Yu, Tianhua, Changdong Kim, Chen-Wei Liang, and Bin Yu. "Formation of Graphene p-n Junction via Complementary Doping." IEEE Electron Device Letters 32, no. 8 (August 2011): 1050–52. http://dx.doi.org/10.1109/led.2011.2158382.

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9

Peters, Eva C., Eduardo J. H. Lee, Marko Burghard, and Klaus Kern. "Gate dependent photocurrents at a graphene p-n junction." Applied Physics Letters 97, no. 19 (November 8, 2010): 193102. http://dx.doi.org/10.1063/1.3505926.

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10

Li, Hao, Shubin Su, Chenhui Liang, Ting Zhang, Xuhong An, Meizhen Huang, Haihua Tao, et al. "UV Rewritable Hybrid Graphene/Phosphor p–n Junction Photodiode." ACS Applied Materials & Interfaces 11, no. 46 (October 28, 2019): 43351–58. http://dx.doi.org/10.1021/acsami.9b14461.

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11

Kim, Jun Beom, Jinshu Li, Yongsuk Choi, Dongmok Whang, Euyheon Hwang, and Jeong Ho Cho. "Photosensitive Graphene P–N Junction Transistors and Ternary Inverters." ACS Applied Materials & Interfaces 10, no. 15 (March 19, 2018): 12897–903. http://dx.doi.org/10.1021/acsami.8b00483.

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12

Lemme, Max C., Frank H. L. Koppens, Abram L. Falk, Mark S. Rudner, Hongkun Park, Leonid S. Levitov, and Charles M. Marcus. "Gate-Activated Photoresponse in a Graphene p–n Junction." Nano Letters 11, no. 10 (October 12, 2011): 4134–37. http://dx.doi.org/10.1021/nl2019068.

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13

Hammam, Ahmed M. M., Marek E. Schmidt, Manoharan Muruganathan, and Hiroshi Mizuta. "Sharp switching behaviour in graphene nanoribbon p-n junction." Carbon 121 (September 2017): 399–407. http://dx.doi.org/10.1016/j.carbon.2017.05.097.

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14

Li, Xiao, Lili Fan, Zhen Li, Kunlin Wang, Minlin Zhong, Jinquan Wei, Dehai Wu, and Hongwei Zhu. "Boron Doping of Graphene for Graphene-Silicon p-n Junction Solar Cells." Advanced Energy Materials 2, no. 4 (February 17, 2012): 425–29. http://dx.doi.org/10.1002/aenm.201100671.

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15

Zhou, Xingfei, Ziying Wu, Yuchen Bai, Qicheng Wang, Zhentao Zhu, Wei Yan, and Yafang Xu. "Light-modulated electron retroreflection and Klein tunneling in a graphene-based n–p–n junction." Chinese Physics B 31, no. 4 (March 1, 2022): 047301. http://dx.doi.org/10.1088/1674-1056/ac2b94.

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Анотація:
We investigate the electron retroreflection and the Klein tunneling across a graphene-based n–p–n junction irradiated by linearly polarized off-resonant light with the polarization along the x direction. The linearly polarized off-resonant light modifies the band structure of graphene, which leads to the anisotropy of band structure. By adjusting the linearly polarized light and the direction of n–p–n junction simultaneously, the electron retroreflection appears and the anomalous Klein tunneling, the perfect transmission at a nonzero incident angle regardless of the width and height of potential barrier, happens, which arises from the fact that the light-induced anisotropic band structure changes the relation of wavevector and velocity of electron. Our finding provides an alternative and flexible method to modulate electron retroreflection and Klein tunneling.
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16

Wang, J. X., Q. Q. Huang, C. L. Wu, Z. J. Wei, N. N. Xuan, Z. Z. Sun, Y. Y. Fu, and R. Huang. "Realization of controllable graphene p–n junctions through gate dielectric engineering." RSC Advances 5, no. 98 (2015): 80496–500. http://dx.doi.org/10.1039/c5ra10921c.

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17

Khurelbaatar, Zagarzusem, and Chel Jong Choi. "Graphene/Ge Schottky Junction Based IR Photodetectors." Solid State Phenomena 271 (January 2018): 133–37. http://dx.doi.org/10.4028/www.scientific.net/ssp.271.133.

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Анотація:
Ge p-i-n photodetectors with and without graphene on active area fabricated and investigated the graphene effects on opto-electrical properties of photodetectors. The photodetectors were characterized with respect to their dark, photocurrents and responsivities in the wavelength range between 1530-1630 nm. For a 250 um-diameter device at room temperature, it was found that dark current of p-i-n photodetector with graphene were reduced significantly compared with photodetector without graphene. This improvement is attributed to the passivation of the graphene layers that leads to the efficient light detection. Therefore, it is noted that the uniform coverage of graphene onto the Ge surface plays a significant role in advancing their opto-electrical performance of photodetector.
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18

Ho, Po-Hsun, Wei-Chen Lee, Yi-Ting Liou, Ya-Ping Chiu, Yi-Siang Shih, Chun-Chi Chen, Pao-Yun Su, et al. "Sunlight-activated graphene-heterostructure transparent cathodes: enabling high-performance n-graphene/p-Si Schottky junction photovoltaics." Energy & Environmental Science 8, no. 7 (2015): 2085–92. http://dx.doi.org/10.1039/c5ee00548e.

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19

Jung, Minkyung, Peter Rickhaus, Simon Zihlmann, Alexander Eichler, Peter Makk, and Christian Schönenberger. "GHz nanomechanical resonator in an ultraclean suspended graphene p–n junction." Nanoscale 11, no. 10 (2019): 4355–61. http://dx.doi.org/10.1039/c8nr09963d.

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20

Syariati, Rifky, Endi Suhendi, Fatimah A. Noor, Mikrajuddin Abdullah, and Khairurrijal. "Modeling of Electron Tunneling Current in a p-n Junction Based on Strained Armchair Graphene Nanoribbon." International Journal of Applied Physics and Mathematics 4, no. 4 (2014): 259–62. http://dx.doi.org/10.7763/ijapm.2014.v4.295.

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21

Park, Chang-Soo. "Band-Gap tuned oscillatory conductance in bilayer graphene n-p-n junction." Journal of Applied Physics 116, no. 3 (July 21, 2014): 033702. http://dx.doi.org/10.1063/1.4890224.

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22

He, Xin, Ning Tang, Li Gao, Junxi Duan, Yuewei Zhang, Fangchao Lu, Fujun Xu, et al. "Formation of p-n-p junction with ionic liquid gate in graphene." Applied Physics Letters 104, no. 14 (April 7, 2014): 143102. http://dx.doi.org/10.1063/1.4870656.

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23

Woszczyna, M., M. Friedemann, T. Dziomba, Th Weimann, and F. J. Ahlers. "Graphene p-n junction arrays as quantum-Hall resistance standards." Applied Physics Letters 99, no. 2 (July 11, 2011): 022112. http://dx.doi.org/10.1063/1.3608157.

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24

Yang, Mou, Xian-Jin Ran, Yan Cui, and Rui-Qiang Wang. "Conductance oscillation of graphene nanoribbon with tilted p-n junction." Journal of Applied Physics 111, no. 8 (April 15, 2012): 083708. http://dx.doi.org/10.1063/1.4704388.

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25

Rahmani, Meisam, M. T. Ahmadi, Mohammad Javad Kiani, and Razali Ismail. "Monolayer Graphene Nanoribbon p–n Junction." Journal of Nanoengineering and Nanomanufacturing 2, no. 4 (December 1, 2012): 375–78. http://dx.doi.org/10.1166/jnan.2012.1097.

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26

Mulyana, Yana, Mutsunori Uenuma, Naofumi Okamoto, Yasuaki Ishikawa, Ichiro Yamashita, and Yukiharu Uraoka. "Creating Reversible p–n Junction on Graphene through Ferritin Adsorption." ACS Applied Materials & Interfaces 8, no. 12 (March 17, 2016): 8192–200. http://dx.doi.org/10.1021/acsami.5b12226.

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27

Tian, Pin, Libin Tang, Kar Seng Teng, Jinzhong Xiang, and Shu Ping Lau. "Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics." Advanced Materials Technologies 4, no. 7 (April 12, 2019): 1900007. http://dx.doi.org/10.1002/admt.201900007.

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28

Xu, Xiaodan, Cong Wang, Yang Liu, Xiaofeng Wang, Nan Gong, Zhimao Zhu, Bin Shi, et al. "A graphene P–N junction induced by single-gate control of dielectric structures." Journal of Materials Chemistry C 7, no. 29 (2019): 8796–802. http://dx.doi.org/10.1039/c9tc02474c.

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29

Phan, Duy-Thach, and Gwiy-Sang Chung. "P–n junction characteristics of graphene oxide and reduced graphene oxide on n-type Si(111)." Journal of Physics and Chemistry of Solids 74, no. 11 (November 2013): 1509–14. http://dx.doi.org/10.1016/j.jpcs.2013.02.007.

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30

Saisa-ard, Chaipattana, I. Ming Tang, and Rassmidara Hoonsawat. "Effects of band gap opening on an n–p–n bilayer graphene junction." Physica E: Low-dimensional Systems and Nanostructures 43, no. 5 (March 2011): 1061–64. http://dx.doi.org/10.1016/j.physe.2010.12.015.

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31

Rajabi, Mehran, Mina Amirmazlaghani, and Farshid Raissi. "Graphene-Based Bipolar Junction Transistor." ECS Journal of Solid State Science and Technology 10, no. 11 (November 1, 2021): 111004. http://dx.doi.org/10.1149/2162-8777/ac3551.

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Анотація:
Graphene was considered likely to revolutionize the electronics industry. This expectation has not yet been fulfilled, mainly due to the non-ideal characteristics of graphene-based transistors. Here, we propose a novel graphene-based structure as a graphene-based bipolar junction transistor (G-BJT), a nanoscale transistor which has the ideal characteristics of the common BJT transistor. In this device, N-P-N regions are formed in the graphene channel by applying voltages to the three gates. The carrier concentrations, energy band diagrams, and current-voltage curves are measured and presented. The base-emitter junction shows a rectifying behavior with the ideality factor in the range of (2.8–3.2), the built-in potential of 0.38V, and the saturation current of 10−12 A. The G-BJT provides a minimum current gain of 20 at the base-width of 10 nm, a feature that cannot be easily obtained in Si-based BJTs. Interestingly, the current gain(β) can be controlled by the gate voltages in G-BJT and changes by 26.5% compared to the maximum value, which leads to the controllability of this proposed transistor. Identical BJT behavior, scalability down to nanometer range, large carrier mobility, along the controllable current gain of G-BJT make this transistor a good candidate for the next generation of the nanoelectronics industry.
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32

Murakami, N., Y. Sugiyama, Y. Ohno, and M. Nagase. "Blackbody-like infrared radiation in stacked graphene P–N junction diode." Japanese Journal of Applied Physics 60, SC (February 22, 2021): SCCD01. http://dx.doi.org/10.35848/1347-4065/abe208.

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33

Sohn, Yeongsup, Woo Jong Shin, Sae Hee Ryu, Minjae Huh, Seyeong Cha, and Keun Su Kim. "Graphene p-n junction formed on SiC(0001) by Au intercalation." Journal of the Korean Physical Society 78, no. 1 (December 15, 2020): 40–44. http://dx.doi.org/10.1007/s40042-020-00010-0.

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34

Li, Yuan, Mansoor B. A. Jalil, and Guanghui Zhou. "Giant magnetoresistance modulated by magnetic field in graphene p-n junction." Applied Physics Letters 105, no. 19 (November 10, 2014): 193108. http://dx.doi.org/10.1063/1.4901743.

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35

Nakaharai, Shu, Tomohiko Iijima, Shinichi Ogawa, Hisao Miyazaki, Songlin Li, Kazuhito Tsukagoshi, Shintaro Sato, and Naoki Yokoyama. "Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon." Applied Physics Express 5, no. 1 (December 12, 2011): 015101. http://dx.doi.org/10.1143/apex.5.015101.

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36

Jung, Minkyung, Peter Rickhaus, Simon Zihlmann, Peter Makk, and Christian Schönenberger. "Microwave Photodetection in an Ultraclean Suspended Bilayer Graphene p–n Junction." Nano Letters 16, no. 11 (October 11, 2016): 6988–93. http://dx.doi.org/10.1021/acs.nanolett.6b03078.

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37

Xu, Lei, Jin An, and Chang-De Gong. "Quantized four-terminal resistances in a ferromagnetic graphene p–n junction." Journal of Physics: Condensed Matter 24, no. 22 (May 2, 2012): 225301. http://dx.doi.org/10.1088/0953-8984/24/22/225301.

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38

Liu, Chieh-I., Dominick S. Scaletta, Dinesh K. Patel, Mattias Kruskopf, Antonio Levy, Heather M. Hill, and Albert F. Rigosi. "Analysing quantized resistance behaviour in graphene Corbino p-n junction devices." Journal of Physics D: Applied Physics 53, no. 27 (May 5, 2020): 275301. http://dx.doi.org/10.1088/1361-6463/ab83bb.

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39

Zhu, Minmin, Jing Wu, Zehui Du, Siuhon Tsang, and Edwin Hang Tong Teo. "Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation." Journal of Applied Physics 124, no. 21 (December 7, 2018): 215302. http://dx.doi.org/10.1063/1.5052589.

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40

Ali, Asif, So-Young Kim, Muhammad Hussain, Syed Hassan Abbas Jaffery, Ghulam Dastgeer, Sajjad Hussain, Bach Thi Phuong Anh, Jonghwa Eom, Byoung Hun Lee, and Jongwan Jung. "Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction." Nanomaterials 11, no. 11 (November 9, 2021): 3003. http://dx.doi.org/10.3390/nano11113003.

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Анотація:
The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O2, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N2 gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O2 showed ~15% de-doping over 4 months. The n-type doping in pure N2 exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.
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41

Lü, Xiao-Long, and Hang Xie. "Bipolar and unipolar valley filter effects in graphene-based P/N junction." New Journal of Physics 22, no. 7 (July 14, 2020): 073003. http://dx.doi.org/10.1088/1367-2630/ab950d.

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42

Liu, Jingping, Safieddin Safavi‐Naeini, and Dayan Ban. "Fabrication and measurement of graphene p–n junction with two top gates." Electronics Letters 50, no. 23 (November 2014): 1724–26. http://dx.doi.org/10.1049/el.2014.3061.

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43

Suszalski, Dominik, Grzegorz Rut, and Adam Rycerz. "Mesoscopic valley filter in graphene Corbino disk containing a p–n junction." Journal of Physics: Materials 3, no. 1 (November 21, 2019): 015006. http://dx.doi.org/10.1088/2515-7639/ab5082.

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44

Williams, J. R., L. DiCarlo, and C. M. Marcus. "Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene." Science 317, no. 5838 (August 3, 2007): 638–41. http://dx.doi.org/10.1126/science.1144657.

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Morozovska, Anna N., Eugene A. Eliseev, and Maksym V. Strikha. "Ballistic conductivity of graphene channel with p-n junction at ferroelectric domain wall." Applied Physics Letters 108, no. 23 (June 6, 2016): 232902. http://dx.doi.org/10.1063/1.4953226.

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