Готові списки джерел за темами / Graphene p-n junction

Добірка наукової літератури з теми "Graphene p-n junction"

Автор: Grafiati

Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Graphene p-n junction"

Fan, Yan, Tao Wang, Yinwei Qiu, Yinli Yang, Qiubo Pan, Jun Zheng, Songwei Zeng, Wei Liu, Gang Lou, and Liang Chen. "Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect." Molecules 26, no. 22 (November 13, 2021): 6849. http://dx.doi.org/10.3390/molecules26226849.

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Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.

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Indykiewicz, K., C. Bray, C. Consejo, F. Teppe, S. Danilov, S. D. Ganichev, and A. Yurgens. "Current-induced enhancement of photo-response in graphene THz radiation detectors." AIP Advances 12, no. 11 (November 1, 2022): 115009. http://dx.doi.org/10.1063/5.0117818.

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Thermoelectric readout in a graphene terahertz (THz) radiation detector requires a p- n junction across the graphene channel. Even without an intentional p- n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the proximity to the metal. In a symmetrical structure, these junctions are connected back-to-back and therefore counterbalance each other with regard to rectification of the ac signal. Because of the Peltier effect, a small dc current results in additional heating in one and cooling in another p- n junction, thereby breaking the symmetry. The p- n junctions then no longer cancel, resulting in a greatly enhanced rectified signal. This allows simplifying the design and controlling the sensitivity of THz radiation detectors.

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Low, Tony, Seokmin Hong, Joerg Appenzeller, Supriyo Datta, and Mark S. Lundstrom. "Conductance Asymmetry of Graphene p-n Junction." IEEE Transactions on Electron Devices 56, no. 6 (June 2009): 1292–99. http://dx.doi.org/10.1109/ted.2009.2017646.

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Liang, Jierui, Ke Xu, Swati Arora, Jennifer E. Laaser, and Susan K. Fullerton-Shirey. "Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions." Materials 13, no. 5 (March 1, 2020): 1089. http://dx.doi.org/10.3390/ma13051089.

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A gateless lateral p-n junction with reconfigurability is demonstrated on graphene by ion-locking using solid polymer electrolytes. Ions in the electrolytes are used to configure electric-double-layers (EDLs) that induce p- and n-type regions in graphene. These EDLs are locked in place by two different electrolytes with distinct mechanisms: (1) a polyethylene oxide (PEO)-based electrolyte, PEO:CsClO4, is locked by thermal quenching (i.e., operating temperature < Tg (glass transition temperature)), and (2) a custom-synthesized, doubly-polymerizable ionic liquid (DPIL) is locked by thermally triggered polymerization that enables room temperature operation. Both approaches are gateless because only the source/drain terminals are required to create the junction, and both show two current minima in the backgated transfer measurements, which is a signature of a graphene p-n junction. The PEO:CsClO4 gated p-n junction is reconfigured to n-p by resetting the device at room temperature, reprogramming, and cooling to T < Tg. These results show an alternate approach to locking EDLs on 2D devices and suggest a path forward to reconfigurable, gateless lateral p-n junctions with potential applications in polymorphic logic circuits.

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Jung, Min Wook, Woo Seok Song, Sung Myung, Jong Sun Lim, Sun Sook Lee, and Ki Seok An. "Formation of Graphene P-N Junction Arrays Using Soft-Lithographic Patterning and Cross-Stacking." Advanced Materials Research 1098 (April 2015): 63–68. http://dx.doi.org/10.4028/www.scientific.net/amr.1098.63.

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Two key issues in graphene-based p-n junction applications are the manipulation of the type and density of carrier in graphene and the development of a facile fabrication process. Here we reported the formation of graphene films with tunable carrier type by doping of ethoxylated polyethylenimine (PEIE) and Au nanoparticles (NPs). The carrier density of doped graphene can be tuned by altering the concentration of the dopant solutions. The doping effects of PEIE and Au NPs on graphene were monitored by resonant Raman spectroscopy and electrical transport measurements. Graphene p-n junction arrays were assembled by simple soft-lithographic patterning and cross-stacking of n-and p-type doped graphene films, showing a graphene p-n junction behavior with two VCNDP.

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Zhang, Shu-Hui, Jia-Ji Zhu, Wen Yang, and Kai Chang. "Focusing RKKY interaction by graphene P–N junction." 2D Materials 4, no. 3 (June 27, 2017): 035005. http://dx.doi.org/10.1088/2053-1583/aa76d2.

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Lv, Shu-Hui, Shu-Bo Feng, and Yu-Xian Li. "Thermopower and conductance for a graphene p–n junction." Journal of Physics: Condensed Matter 24, no. 14 (March 13, 2012): 145801. http://dx.doi.org/10.1088/0953-8984/24/14/145801.

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Yu, Tianhua, Changdong Kim, Chen-Wei Liang, and Bin Yu. "Formation of Graphene p-n Junction via Complementary Doping." IEEE Electron Device Letters 32, no. 8 (August 2011): 1050–52. http://dx.doi.org/10.1109/led.2011.2158382.

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Peters, Eva C., Eduardo J. H. Lee, Marko Burghard, and Klaus Kern. "Gate dependent photocurrents at a graphene p-n junction." Applied Physics Letters 97, no. 19 (November 8, 2010): 193102. http://dx.doi.org/10.1063/1.3505926.

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Li, Hao, Shubin Su, Chenhui Liang, Ting Zhang, Xuhong An, Meizhen Huang, Haihua Tao, et al. "UV Rewritable Hybrid Graphene/Phosphor p–n Junction Photodiode." ACS Applied Materials & Interfaces 11, no. 46 (October 28, 2019): 43351–58. http://dx.doi.org/10.1021/acsami.9b14461.

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Дисертації з теми "Graphene p-n junction"

Mayorov, Alexander. "Tunnelling and noise in GaAs and graphene nanostructures." Thesis, University of Exeter, 2008. http://hdl.handle.net/10036/46914.

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Experimental studies presented in this thesis have shown the first realisation of resonant tunnelling transport through two impurities in a vertical double-barrier tunnelling diode; have proved the chiral nature of charge carriers in graphene by studying ballistic transport through graphene $p$-$n$ junctions; have demonstrated significant differences of $1/f$ noise in graphene compared with conventional two-dimensional systems. Magnetic field parallel to the current has been used to investigate resonant tunnelling through a double impurity in a vertical double-barrier resonant tunnelling diode, by measuring the current-voltage and differential conductance-voltage characteristics of the structure. It is shown that such experiments allow one to obtain the energy levels, the effective electron mass and spatial positions of the impurities. The chiral nature of the carriers in graphene has been demonstrated by comparing measurements of the conductance of a graphene $p$-$n$-$p$ structure with the predictions of diffusive models. This allowed us to find, unambiguously, the contribution of ballistic resistance of graphene $p$-$n$ junctions to the total resistance of the $p$-$n$-$p$ structure. In order to do this, the band profile of the $p$-$n$-$p$ structure has been calculated using the realistic density of states in graphene. It has been shown that the developed models of diffusive transport can be applied to explain the main features of the magnetoresistance of $p$-$n$-$p$ structures. It was shown that $1/f$ noise in graphene has much more complicated concentration and temperature dependences near the Dirac point than in usual metallic systems, possibly due to the existence of the electron-hole puddles in the electro-neutrality region. In the regions of high carrier concentration where no inhomogeneity is expected, the noise has an inverse square root dependence on the concentration, which is also in contradiction with the Hooge relation.

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Samutpraphoot, Polnop. "Anomalous Hall effect and persistent valley currents in graphene p-n junctions/." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/92691.

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Thesis: S.B., Massachusetts Institute of Technology, Department of Physics, 2014.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 39-40).
Dirac particles can exhibit Hall-like transport induced by Berry's gauge field in the absence of magnetic field. We develop a detailed picture of this unusual effect for charge carriers in graphene nanostructures. The Hall effect is nonzero in each valley but is of opposite signs in different valleys, giving rise to charge-neutral valley currents. Our analysis reveals that p-n junctions in graphene support persistent valley currents that remain nonzero in the system ground state (in thermodynamic equilibrium). The valley currents can be controlled via the bias and gate voltages, enabling a variety of potentially useful valley transport phenomena.
by Polnop Samutpraphoot.
S.B.

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Kumar, Chandan. "Quantum transport in Graphene Moire Superlattice and p-n junction." Thesis, 2018. https://etd.iisc.ac.in/handle/2005/5428.

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The discovery of graphene has revolutionized the field of mesoscopic condensed matter physics. It has started a new field of van-der Waals heterostructure in which different two-dimensional materials including graphene can be stacked on top of each other. In the last few years graphene based van-der Walls heterostructure has lead to many interesting physics like Hofstadter’s butterfly, Valley Hall effect, Mott insulator and superconductivity. In this thesis, two different kinds of graphene heterostructures, namely, graphene moiré superlattice (GMSL) and graphene p-n junction (GPNJ) have been studied extensively. The GMSL is realized by aligning and stacking graphene and hexagonal boron nitride with an accuracy of . This leads to additional set of Dirac cones known as cloned Dirac cones (CDC) which are placed symmetrically around the primary Dirac cone (PDC). As a part of the thesis, we have studied the magneto-conductance on GMSL devices as a function of carrier concentration and temperature, which reveals a transition from weak anti-localization (WAL) near the PDC to weak localization (WL) near the CDC. The transition is explained due to the shift of Berry phase, which is measured experimentally by probing the Shubnikov-de Haas oscillations. Furthermore, we study the low frequency 1/f noise at multiple Dirac cones in GMSL devices. Our results reveal that the low-frequency noise in GMSL devices can be tuned by more than two-orders of magnitude by changing carrier concentration as well as by modifying the band structure. We find that the noise is suppressed at the CDC compared to the PDC and understood in terms of screening. In the second part of the thesis, we study the equilibration of quantum Hall edges in GPNJ devices, which are realized in dual gated geometry. The equilibration of electron-like and hole-like edges in graphene p-n junction have been studied in single and bilayer graphene in both unipolar and bipolar regime, when the different symmetries likes valley, spin and orbital degrees of freedoms are broken. Our studies reveal the partial equilibration based on the spin polarization of the quantum Hall edges. Furthermore, we have carried out shot noise measurements to understand the dynamics and mixing of quantum Hall edges at the p-n junction, which could be used as an electronic beam splitter

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Lee, Wei-Chen, and 李威辰. "Sunlight-activated Graphene-heterostructure Transparent Cathodes：Enabling High-performance n-graphene/p-Si Schottky Junction Photovoltaics." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/82319427303022639214.

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碩士
國立臺灣大學
材料科學與工程學研究所
103
Graphene, which consists of a single atom-thick layer of carbon, has a lot of attracting properties such as tunable work function, high transparency and high carrier mobility etc. All these properties make graphene be a promising material to replacing widely-used ITO as transparent conducting electrode. However, compared to well-developed graphene-based anodes, fabricating a stable graphene-based cathode is more difficult because n-type dopants for graphene have limited thermal and chemical stabilities and are also sensitive to the influence of ambient environment. In the first part of this thesis, we developed a novel “sunlight-activated” graphene-heterostructure transparent electrode. Besides, TiOx was found to be an effective n-type dopant for graphene by surface charge transfer process. With only costing a small amount of ultraviolet, TiOx will photo-generates charges under illumination then are transferred toward graphene and further doped it. This photoactive TiOx/graphene heterostructure transparent electrode exhibits excellent tunable electrical properties and is appropriate to fabricate an n-graphene/p-silicon Schottky junction solar cell, even achieving a record-high power efficiency of graphene/p-silicon structure. In the second part, we aim to improve the performance of device in the first part. With more suitable anti-reflective layers, back contact electrodes, and surface passivation, we demonstrate a “trap-free” photoactive n-graphene/p-Si Schottky solar cell with higher short circuit current and open circuit voltage. This device is also an ideal candidate for future derivatives of tandem cells.

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Книги з теми "Graphene p-n junction"

Williams, James Ryan. Electronic transport in graphene: P-n junctions, shot noise, and nanoribbons. 2009.

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Частини книг з теми "Graphene p-n junction"

Liu, Cheng-Hua. "Observation of Quantum Hall Plateau-Plateau Transition and Scaling Behavior of the Zeroth Landau Level in Graphene p-n-p Junction." In Springer Theses, 41–53. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1355-4_5.

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Mreńca-Kolasińska, Alina, and Bartłomiej Szafran. "Circular n-p Junctions in Graphene Nanoribbons." In Physics of Quantum Rings, 559–80. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-95159-1_18.

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Grushevskaya, H. V., G. G. Krylov, S. P. Kruchinin, and B. Vlahovic. "Graphene Quantum Dots, Graphene Non-circular n–p–n-Junctions: Quasi-relativistic Pseudo Wave and Potentials." In NATO Science for Peace and Security Series A: Chemistry and Biology, 47–58. Dordrecht: Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-94-024-1304-5_4.

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Liu, Cheng-Hua. "Distinctive Magnetotransport of Graphene p-n-p Junctions via Resist-Free Fabrication and Controlled Diffusion of Metallic Contact." In Springer Theses, 33–40. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1355-4_4.

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Pandya, Ankur, Vishal Sorathiya, and Sunil Lavadiya. "Graphene-Based Nanophotonic Devices." In Recent Advances in Nanophotonics - Fundamentals and Applications. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.93853.

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Graphene is an ideal 2D material that breaks the fundamental properties of size and speed limits by photonics and electronics, respectively. Graphene is also an ideal material for bridging electronic and photonic devices. Graphene offers several functions of modulation, emission, signal transmission, and detection of wideband and short band infrared frequency spectrum. Graphene has improved human life in multiple ways of low-cost display devices and touchscreen structures, energy harvesting devices (solar cells), optical communication components (modulator, polarizer, detector, laser generation). There is numerous literature is available on graphene synthesis, properties, devices, and applications. However, the main interest among the scientist, researchers, and students to start with the numerical and computational process for the graphene-based nanophotonic devices. This chapter also includes the examples of graphene applications in optoelectronics devices, P-N junction diodes, photodiode structure which are fundamental devices for the solar cell and the optical modulation.

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Ryzhii, V., M. Ryzhii, M. S. Shur, and V. Mitin. "Negative Terahertz Dynamic Conductivity in Electrically Induced Lateral p-i-n Junction in Graphene *." In Graphene-Based Terahertz Electronics and Plasmonics, 353–61. Jenny Stanford Publishing, 2020. http://dx.doi.org/10.1201/9780429328398-23.

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"Graphene Materials for Third Generation Solar Cell Technologies." In Materials for Solar Cell Technologies I, 29–61. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901090-2.

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Photovoltaic technology is the most sustainable source of renewable energy because sunlight radiation is free and readily available. Therefore, the materials required accessing this energy source, cost and the efficiency of conversion from solar to electricity is the topic of interest in continued research. Graphene as a sp2-hybridized 2-dimensional carbon with unique crystal and electronic properties comprising high charge carrier mobility, optical transparency, inexpensive, excellent mechanical strength and flexibility with chemical stability and inertness among others is a suitable material for application in various units of the different architectures in third generation solar cells. It can be applied as a semiconductor layer, electrolyte and counter-electrode in dye-sensitized solar cells; electrode, perovskite, electron and hole transporting layers in perovskite solar cells; and electrode, hole transporting layer and electron acceptor and donor in organic solar cells; in addition to graphene/silicon Schottky junction. Following the application of graphene in various units of the third generation architecture, the power conversion efficiency has increased from 1.9% to over 22%, with ongoing research expected to develop a more stable design with longevity comparable to commercially available silicon-based p-n junction.

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Ryzhii, M., V. Ryzhii, T. Otsuji, V. Mitin, and M. S. Shur. "Electrically-Induced n-i-p Junctions in Multiple Graphene Layer Structures *." In Graphene-Based Terahertz Electronics and Plasmonics, 41–57. Jenny Stanford Publishing, 2020. http://dx.doi.org/10.1201/9780429328398-4.

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Тези доповідей конференцій з теми "Graphene p-n junction"

Moghaddam, Nahid Shayesteh, Mohammad Taghi Ahmadi, Meisam Rahmani, Noraliah Aziziah Amin, Hossein Shayesteh Moghaddam, and Razali Ismail. "Monolayer graphene nanoribbon p-n junction." In 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2011. http://dx.doi.org/10.1109/rsm.2011.6088336.

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Liu, Jingping, Dayan Ban, Safieddin Safavi-Naeini, and Huichang Zhao. "Terahertz source with graphene p-n junction." In 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2015. http://dx.doi.org/10.1109/irmmw-thz.2015.7327940.

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Yamakage, A., K. I. Imura, J. Cayssol, and Y. Kuramoto. "Spin-orbit effects in graphene p - n junction." In INTERNATIONAL CONFERENCE OF COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING 2009: (ICCMSE 2009). AIP, 2012. http://dx.doi.org/10.1063/1.4771832.

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Sajjad, Redwan N., and Avik W. Ghosha. "Tunable transmission Gap in graphene p-n junction." In 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135255.

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Gu, Tingyi, Nick Petrone, Arend van der Zande, Yilei Li, Austin Cheng, Tony F. Heinz, Philip Kim, et al. "Photocurrent gain in graphene-silicon p-i-n junction." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/cleo_si.2015.sw4n.4.

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Shamsir, Samira, Laila Parvin Poly, and Samia Subrina. "Electrostatic analysis of graphene nanoribbon p-n junction diode." In 2015 IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE). IEEE, 2015. http://dx.doi.org/10.1109/wiecon-ece.2015.7444014.

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Gu, Tingyi, Dun Mao, Tiantian Li, and Thomas Kananen. "High Detectivity in CMOS Substrate Powered Graphene p-i-n Junction." In 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID). IEEE, 2019. http://dx.doi.org/10.1109/rapid.2019.8864431.

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Jung, Minkyung, Peter Rickhaus, Simon Zihlmann, Alexander Eichler, Peter Makk, and Christian Schonenberger. "High-Frequency Nanomechanical Resonator in a Ballistic Graphene p-n Junction." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819098.

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Sutar, Surajit, Everett Comfort, and Ji Ung Lee. "Incidence angle-dependent transport across a single graphene p-n junction." In 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135258.

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Pan, Chenyun, and Azad Naeemi. "Device- and system-level performance modeling for graphene P-N junction logic." In 2012 13th International Symposium on Quality Electronic Design (ISQED). IEEE, 2012. http://dx.doi.org/10.1109/isqed.2012.6187504.

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