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Статті в журналах з теми "Ge/Si ratios"
Wang, Yuchen, Tong Zhao, Zhifang Xu, Huiguo Sun, and Jiangyi Zhang. "Ge/Si Ratio of River Water in the Yarlung Tsangpo: Implications for Hydrothermal Input and Chemical Weathering." Water 14, no. 2 (January 10, 2022): 181. http://dx.doi.org/10.3390/w14020181.
Повний текст джерелаZhao, Dandan, Yang Cui, Jing Li, and Lin Zhang. "Atomic Simulations of Si@Ge and Ge@Si Nanowires for Mechanical and Thermal Properties." Crystals 12, no. 10 (October 13, 2022): 1447. http://dx.doi.org/10.3390/cryst12101447.
Повний текст джерелаWang, L. C., B. Zhang, F. Fang, E. D. Marshall, S. S. Lau, T. Sands, and T. F. Kuech. "An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system." Journal of Materials Research 3, no. 5 (October 1988): 922–30. http://dx.doi.org/10.1557/jmr.1988.0922.
Повний текст джерелаWu, Zi-Qin, and Bin Zheng. "Fractal formation in Al/Ge bilayer films after annealing." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 212–13. http://dx.doi.org/10.1017/s0424820100174199.
Повний текст джерелаKots, Pavel A., Alexander V. Kurkin, Vitaly L. Sushkevich, Andrew N. Fitch, Vladimir V. Chernyshev, and Irina I. Ivanova. "Synchrotron XRD and NMR evidence of germanium redistribution during silylation of BEC-type germanosilicate." CrystEngComm 19, no. 40 (2017): 5982–88. http://dx.doi.org/10.1039/c7ce01204g.
Повний текст джерелаDelvigne, Camille, Sophie Opfergelt, Damien Cardinal, Axel Hofmann, and Luc André. "Desilication in Archean weathering processes traced by silicon isotopes and Ge/Si ratios." Chemical Geology 420 (January 2016): 139–47. http://dx.doi.org/10.1016/j.chemgeo.2015.11.007.
Повний текст джерелаYang, Shuying, Munir Humayun, and Vincent J. M. Salters. "Elemental constraints on the amount of recycled crust in the generation of mid-oceanic ridge basalts (MORBs)." Science Advances 6, no. 26 (June 2020): eaba2923. http://dx.doi.org/10.1126/sciadv.aba2923.
Повний текст джерелаGUO, CAIHONG, JIHONG ZHENG, KUN GUI, MENGHUA ZHANG, and SONGLIN ZHUANG. "OPTIMIZATION AND DESIGN OF 2D HONEYCOMB LATTICE PHOTONIC CRYSTAL MODULATED BY LIQUID CRYSTALS." Modern Physics Letters B 27, no. 31 (December 3, 2013): 1350233. http://dx.doi.org/10.1142/s0217984913502333.
Повний текст джерелаCornelis, J. T., B. Delvaux, D. Cardinal, L. André, J. Ranger, and S. Opfergelt. "Tracing mechanisms controlling the release of dissolved silicon in forest soil solutions using Si isotopes and Ge/Si ratios." Geochimica et Cosmochimica Acta 74, no. 14 (July 2010): 3913–24. http://dx.doi.org/10.1016/j.gca.2010.04.056.
Повний текст джерелаBreiter, Karel, Nina Gardenová, Viktor Kanický, and Tomáš Vaculovič. "Gallium and germanium geochemistry during magmatic fractionation and post-magmatic alteration in different types of granitoids: a case study from the Bohemian Massif (Czech Republic)." Geologica Carpathica 64, no. 3 (June 1, 2013): 171–80. http://dx.doi.org/10.2478/geoca-2013-0018.
Повний текст джерелаДисертації з теми "Ge/Si ratios"
Delvigne, Camille. "The Archaean silicon cycle insights from silicon isotopes and Ge/Si ratios in banded iron formations, palaeosols and shales." Doctoral thesis, Universite Libre de Bruxelles, 2012. http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/209652.
Повний текст джерелаFirst, this study focuses on Si inputs and outputs to ocean over a limited time period (~2.95 Ga Pongola Supergroup, South Africa) through the study of a palaeosol sequence and a contemporaneous banded iron formation. The palaeosol study offers precious clues in the comprehension of Archaean weathering processes and Si transfer from continent to ocean. Desilication and iron leaching were shown to be the major Archaean weathering processes. The occurrence of weathering residues issued of these processes as major component in fine-grained detrital sedimentary mass (shales) attests that identified weathering processes are widely developed and suggest an important dissolved Si flux from continent to the ocean. In parallel, banded iron formations (BIFs), typically characterised by alternation of iron-rich and silica-rich layers, represent an extraordinary record of the ocean-derived silica precipitation throughout the Precambrian. A detailed study of a 2.95 Ga BIF with excellent stratigraphic constraints identifies a seawater reservoir mixed with significant freshwater and very limited amount of high temperature hydrothermal fluids as the parental water mass from which BIFs precipitated. In addition, the export of silicon promoted by the silicon adsorption onto Fe-oxyhydroxides is evidenced. Then, both Si- and Fe-rich layers of BIFs have a common source water mass and a common siliceous ferric oxyhydroxides precursor. Thus, both palaeosols and BIFs highlight the significance of continental inputs to ocean, generally under- estimated or neglected, as well as the close link between Fe and Si cycles.
In a second time, this study explores secular changes in the Si cycle along the Precambrian. During this timespan, the world ocean underwent a progressive decrease in hydrothermal inputs and a long-term cooling. Effects of declining temperature over the oceanic Si cycle are highlighted by increasing δ30Si signatures of both chemically precipitated chert and BIF through time within the 3.8-2.5 Ga time interval. Interestingly, Si isotope compositions of BIF are shown to be kept systematically lighter of about 1.5‰ than contemporaneous cherts suggesting that both depositions occurred through different mechanisms. Along with the progressive increase of δ30Si signature, a decrease in Ge/Si ratios is attributed to a decrease in hydrothermal inputs along with the development of large and widespread desilication during continental weathering.
Le cycle externe du silicium au précambrien (4.5-0.5 Ga) reste mal compris malgré sa position clé dans la compréhension des processus opérant à la surface de la Terre primitive. En l’absence d’organismes sécrétant un squelette externe en silice, le cycle précambrien du silicium était vraisemblablement très différent de celui que nous connaissons à l’heure actuelle. Notre conception de l’océan archéen est limitée à l’hypothèse d’une concentration en silicium proche de la saturation en silice amorphe. Cette thèse vise à une meilleure compréhension des processus qui contrôlaient le cycle géochimique externe du silicium à l’archéen (3.8-2.5 Ga). Dans cette optique, le rapport germanium/silicium (Ge/Si) et les isotopes stables du silicium (δ30Si) représentent des traceurs idéaux pour démêler les différents processus contrôlant le cycle du Si.
Dans un premier temps, cette étude se focalise sur les apports et les exports de silicium à l’océan sur une période de temps restreinte (~2.95 Ga Pongola Supergroup, Afrique du Sud) via l’étude d’un paléosol et d’un dépôt sédimentaire de précipitation chimique quasi-contemporain. L’étude du paléosol apporte de précieux indices quant aux processus d’altération archéens et aux transferts de silicium des continents vers l’océan. Ainsi, la désilicification et le lessivage du fer apparaissent comme des processus majeurs de l’altération archéenne. La présence de résidus issus de ces processus d’altération en tant que composants majeurs de dépôts détritiques (shales) atteste de la globalité de ces processus et suggère des flux significatifs en silicium dissout des continents vers l’océan. En parallèle, les « banded iron formations » (BIFs), caractérisés par une alternance de niveaux riches en fer et en silice, représentent un enregistrement extraordinaire et caractéristique du précambrien de précipitation de silice à partir de l’océan. Une étude détaillée d’un dépôt de BIFs permet d’identifier une contribution importante des eaux douces dans la masse d’eau à partir de laquelle ces roches sont précipitées. Par ailleurs, un mécanisme d’export de silicium via absorption sur des oxyhydroxydes de fer est mis en évidence. Ainsi, les niveaux riches en fer et riche en silice constituant les BIFs auraient une même origine, un réservoir d’eau de mer mélangée avec des eaux douces et une contribution minime de fluides hydrothermaux de haute température, et un même précurseur commun. Dès lors, tant les paléosols que les BIFs mettent en évidence l’importance des apports continentaux à l’océan, souvent négligés ou sous estimés, ainsi que le lien étroit entre les cycles du fer et du silicium.
Dans un second temps, cette étude explore l’évolution du cycle du silicium au cours du précambrien. Durant cette période, l’océan voit les apports hydrothermaux ainsi que sa température diminuer. Dans l’intervalle de temps 3.8-2.5 Ga, les effets de tels changements sur le cycle du silicium sont marqués par un alourdissement progressif des signatures isotopiques des cherts et des BIFs. Le fort parallélisme entre l’évolution temporelle des compositions isotopiques des deux précipités met en évidence leur origine commune, l’océan. Cependant, les compositions isotopiques des BIFs sont systématiquement plus légères d’environ 1.5‰ que les signatures enregistrées pas les cherts. Cette différence est interprétée comme le reflet de mécanismes de dépôts différents. L’alourdissement progressif des compositions isotopiques concomitant à une diminution des rapports Ge/Si reflètent une diminution des apports hydrothermaux ainsi que la mise en place d’une désilicification de plus en plus importante et/ou généralisée lors de l’altération des continents.
Doctorat en Sciences
info:eu-repo/semantics/nonPublished
Vernière, Anne. "Etude de siliciures ternaires : élaboration, propriétés structurales et magnétiques." Université Joseph Fourier (Grenoble), 1995. http://www.theses.fr/1995GRE10213.
Повний текст джерелаChen, Jiun Hung, and 陳俊宏. "A study of different thickness ratio of Ni、Ge、Si recording film for the write-once bule-ray disk." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/56541514022796813556.
Повний текст джерела中興大學
材料工程學系所
95
Recently﹐the recording of blue-ray write-once disk are mainly made by a-Si/Cu . However﹐due to the advances of the blue-ray disk technique day by day﹐the multi-layers is developed successfully . Therefore﹐we need to further increase the data transfer rate﹐but must change the film structure or use the other material to instead of a-Si . In this study﹐different thickness ratio of a-Ge/Ni、a-Si/a-Ge/Ni and a-Ge/Ni/a-Si recording film by an ion beam assisted deposition(IBAD) system was adopted as the recording layer for the blue-ray write-once disk . Learnt by the experimental result﹐a-Ge(20 nm)/ Ni(1 nm) of recording film only the phase variety of two stages happen, the first stage will have obvious reflectivity increment between 400~440 ℃, the second stage is in the anneal temperature after raising to 500 ℃. Take place the droop of reflectivity. Between 400~440 ℃ reflectivity varieties change for the amorphous Ge crystallization, the reflectivity after 540 ℃ droop for crystallize melting of Ge. Ge(20 nm)/Ni(2 nm) record film has the reflectivity of four stages and changes in the anneal process. The first stage is forming Ni5 Ge3 phase by Ni and Ge inter-diffusion . The variety of second stage is the Ni5 Ge3 and Ge wedge bonding to become NiGe phase. The third stage goes to 390 ℃ for the anneal or so then will have the crystallize germanium . The Ge of the fourth stage occurrence melts to cause of reflectivity droop. And a-Si/a-Ge/Ni at the phase change generated by the anneal temperature of below 500 ℃ all and a-Ge(20 nm)/Ni(2 nm) record film homology, and can generate in above 500 ℃ the second-time reflectivity increment .Suggest being because forming Ni-Si compound cause. So we infer it when can apply blue-ray write-once disk , can because of reflectivity again increase of the phenomemon raise between as-deposition and data write of reflectivity difference. For the a-Ge/Ni/a-Si record film, after 580 ℃ anneal transactions, become the gradient of the reflectivity rising of crystallize Ge reduces after 580 ℃ anneal transactions and occurrence reflectivity again increase of the phenomemon of gradient droop. On the other hand in element depth composition analysis, we find Ni and Ge will produced inter-diffusion but a-Si and a-Ge will be not easy. Also find that the Ni atom will spread into a Si substrate after anneal. In activation energy analysis, the add of amorphous Si layer that can reduce amorphous Ge to change crystallize Ge phase change activation energy but will raise phase variety temperature. The affix of besides amorphous Si layer can also reduce the phase of the Ni5Ge3 phases change activation energy, while the Ni5Ge3 change the activation energy smaller record film forming NiGe phase of the phase change the activation energy is also lower. The residual stress analyzes, understand all as-deposited of record membranes in order to compress stress.If there are more remain stress in the recording films, the heat which is needed to " relaxation " the stress is higher. So that delays the phase change temperature which produce Ni5Ge3.
Частини книг з теми "Ge/Si ratios"
Huang, Mengyuan, Kelly Magruder, Yann Malinge, Parastou Fakhimi, Hao-Hsiang Liao, David Kohen, Gregory Lovell, et al. "Germanium on Silicon Avalanche Photodiode for High-Speed fiber Communication." In Photodetectors - Recent Advances, New Perspectives and Applications [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.107971.
Повний текст джерелаAutran Daniela Munteanu, Jean-Luc. "Radiation Response of Group-IV and III-V Semiconductors Subjected to D–D and D–T Fusion Neutrons." In New Advances in Semiconductors [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.103047.
Повний текст джерелаAutran Daniela Munteanu, Jean-Luc. "Radiation Response of Group-IV and III-V Semiconductors Subjected to D–D and D–T Fusion Neutrons." In New Advances in Semiconductors [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.103047.
Повний текст джерелаТези доповідей конференцій з теми "Ge/Si ratios"
Frings, Patrick, Marcus Oelze, Friedhelm von Blanckenburg, and Franziska Schubring. "Quantifying biotic and abiotic Si fluxes in the Critical Zone with Ge/Si ratios along a gradient of erosion rates." In Goldschmidt2021. France: European Association of Geochemistry, 2021. http://dx.doi.org/10.7185/gold2021.4653.
Повний текст джерелаPhillips, Matthew, Olivier Alard, and Stephen Foley. "Application of Ge/Si ratios to ultramafic alkaline rocks using a novel LA-ICP-QQQ-MS method." In Goldschmidt2022. France: European Association of Geochemistry, 2022. http://dx.doi.org/10.46427/gold2022.11565.
Повний текст джерелаShinkawa, A., M. Wakiya, Y. Maeda, T. Tsukamoto, and Y. Suda. "Hole-Tunneling Si1-xGex/Si ASDQW RTD with High Resonant Current and High Peak-to-Valley Current Ratio." In 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.ps-9-08.
Повний текст джерелаLu, Lu, Jinlin Song, Kun Zhou, and Qiang Cheng. "Near-Field Radiative Heat Transfer Between Mie Resonance-Based Metamaterials Made of Coated Nonmagnetic Particles." In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-3998.
Повний текст джерелаMusho, T. D., and D. G. Walker. "Coupled Non-Equilibrium Green’s Function (NEGF) Electron-Phonon Interaction in Thermoelectric Materials." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-65786.
Повний текст джерелаLiang, Zhi, and Hai-Lung Tsai. "Effect of Interlayer Between Semiconductors on Interfacial Thermal Transport." In ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75273.
Повний текст джерелаStevens, Robert J., Pamela M. Norris, and Arthur W. Lichtenberger. "Experimental Determination of the Relationship Between Thermal Boundary Resistance and Non-Abrupt Interfaces and Electron-Phonon Coupling." In ASME 2004 Heat Transfer/Fluids Engineering Summer Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/ht-fed2004-56556.
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