Статті в журналах з теми "GaN Power and THz Devices"
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CHU, K. K., P. C. CHAO, and J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 738–44. http://dx.doi.org/10.1142/s0129156404002764.
Повний текст джерелаNela, Luca, Ming Xiao, Yuhao Zhang, and Elison Matioli. "A perspective on multi-channel technology for the next-generation of GaN power devices." Applied Physics Letters 120, no. 19 (May 9, 2022): 190501. http://dx.doi.org/10.1063/5.0086978.
Повний текст джерелаMartín-Guerrero, Teresa M., Damien Ducatteau, Carlos Camacho-Peñalosa, and Christophe Gaquière. "GaN devices for power amplifier design." International Journal of Microwave and Wireless Technologies 1, no. 2 (April 2009): 137–43. http://dx.doi.org/10.1017/s1759078709000178.
Повний текст джерелаDi, Kuo, and Bingcheng Lu. "Gallium Nitride Power Devices in Magnetically Coupled Resonant Wireless Power Transfer Systems." Journal of Physics: Conference Series 2463, no. 1 (March 1, 2023): 012007. http://dx.doi.org/10.1088/1742-6596/2463/1/012007.
Повний текст джерелаRoberts, J., A. Mizan, and L. Yushyna. "Optimized High Power GaN Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.
Повний текст джерелаZhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu, and Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate." Materials Science Forum 1014 (November 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.
Повний текст джерелаChowdhury, Sauvik, Zachary Stum, Zhong Da Li, Katsunori Ueno, and T. Paul Chow. "Comparison of 600V Si, SiC and GaN Power Devices." Materials Science Forum 778-780 (February 2014): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.971.
Повний текст джерелаZhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li, and J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1307. http://dx.doi.org/10.1149/ma2022-01311307mtgabs.
Повний текст джерелаWu, Ping, Wen Sheng Wei, Jun Ding Zheng, Wei Bo Yang, Chang Li, Ming Chang He, and Yi Wan. "Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes." Materials Science Forum 1014 (November 2020): 157–62. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.157.
Повний текст джерелаZhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li, and J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices." ECS Transactions 108, no. 6 (May 20, 2022): 11–20. http://dx.doi.org/10.1149/10806.0011ecst.
Повний текст джерелаLiu, An-Chen, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, and Edward Yi Chang. "The Evolution of Manufacturing Technology for GaN Electronic Devices." Micromachines 12, no. 7 (June 23, 2021): 737. http://dx.doi.org/10.3390/mi12070737.
Повний текст джерелаUEDA, TETSUZO, YASUHIRO UEMOTO, TSUYOSHI TANAKA, and DAISUKE UEDA. "GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS." International Journal of High Speed Electronics and Systems 19, no. 01 (March 2009): 145–52. http://dx.doi.org/10.1142/s0129156409006199.
Повний текст джерелаVobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.
Повний текст джерелаRodriguez, Jose A., Tsz Tsoi, David Graves, and Stephen B. Bayne. "Evaluation of GaN HEMTs in H3TRB Reliability Testing." Electronics 11, no. 10 (May 11, 2022): 1532. http://dx.doi.org/10.3390/electronics11101532.
Повний текст джерелаKhan, Sahanowaj, Aritra Acharyya, Hiroshi Inokawa, Hiroaki Satoh, Arindam Biswas, Rudra Sankar Dhar, Amit Banerjee, and Alexey Y. Seteikin. "Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy." Photonics 10, no. 7 (July 10, 2023): 800. http://dx.doi.org/10.3390/photonics10070800.
Повний текст джерелаMcCarthy, L. S., N.-Q. Zhang, H. Xing, B. Moran, S. DenBaars, and U. K. Mishra. "High Voltage AlGaN/GaN Heterojunction Transistors." International Journal of High Speed Electronics and Systems 14, no. 01 (March 2004): 225–43. http://dx.doi.org/10.1142/s0129156404002314.
Повний текст джерелаZhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.
Повний текст джерелаWu, Nengtao, Zhiheng Xing, Shanjie Li, Ling Luo, Fanyi Zeng, and Guoqiang Li. "GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices." Semiconductor Science and Technology 38, no. 6 (April 25, 2023): 063002. http://dx.doi.org/10.1088/1361-6641/acca9d.
Повний текст джерелаWaltereit, Patrick, Wolfgang Bronner, Rüdiger Quay, Michael Dammann, Rudolf Kiefer, Wilfried Pletschen, Stefan Müller, et al. "AlGaN/GaN epitaxy and technology." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 3–11. http://dx.doi.org/10.1017/s175907871000005x.
Повний текст джерелаWang, Peng-Fei, Min-Han Mi, Meng Zhang, Qing Zhu, Jie-Jie Zhu, Yu-Wei Zhou, Jun-Wen Chen, et al. "Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates." Applied Physics Letters 120, no. 10 (March 7, 2022): 102103. http://dx.doi.org/10.1063/5.0080320.
Повний текст джерелаCarlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu, and Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates." Materials Science Forum 924 (June 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.
Повний текст джерелаLoong, Ling Jin, Chockalingam Aravind Vaithilingam, Gowthamraj Rajendran, and Venkatkumar Muneeswaran. "Modelling and analysis of vienna rectifier for more electric aircraft applications using wide band-gap materials." Journal of Physics: Conference Series 2120, no. 1 (December 1, 2021): 012027. http://dx.doi.org/10.1088/1742-6596/2120/1/012027.
Повний текст джерелаHikita, Masahiro, Hiroaki Ueno, Hisayoshi Matsuo, Tetsuzo Ueda, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, and Daisuke Ueda. "Status of GaN-Based Power Switching Devices." Materials Science Forum 600-603 (September 2008): 1257–62. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1257.
Повний текст джерелаKitchen, Jennifer, Soroush Moallemi, and Sumit Bhardwaj. "Multi-chip module integration of Hybrid Silicon CMOS and GaN Technologies for RF Transceivers." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 000339–82. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp1_010.
Повний текст джерелаNeufeld, Carl, Geetak Gupta, Philip Zuk, and Likun Shen. "(Invited) Advances in High Power, High Voltage, Reliable GaN Products for Multi Kilo-Watt Power Conversion Applications." ECS Meeting Abstracts MA2022-02, no. 37 (October 9, 2022): 1345. http://dx.doi.org/10.1149/ma2022-02371345mtgabs.
Повний текст джерелаRoberts, J., T. MacElwee, and L. Yushyna. "The Thermal Integrity of Integrated GaN Power Modules." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000061–68. http://dx.doi.org/10.4071/hiten-mp12.
Повний текст джерелаSugimoto, M., H. Ueda, T. Uesugi, and T. kachi. "WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 3–9. http://dx.doi.org/10.1142/s012915640700414x.
Повний текст джерелаKong, Cen, Jian Jun Zhou, Jin Yu Ni, Yue Chan Kong, and Tang Sheng Chen. "High Breakdown Voltage GaN Power HEMT on Si Substrate." Advanced Materials Research 805-806 (September 2013): 948–53. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.948.
Повний текст джерелаGreen, B., H. Henry, K. Moore, J. Abdou, R. Lawrence, F. Clayton, M. Miller, et al. "A GAN ON SIC HFET DEVICE TECHNOLOGY FOR WIRELESS INFRASTRUCTURE APPLICATIONS." International Journal of High Speed Electronics and Systems 17, no. 01 (March 2007): 11–14. http://dx.doi.org/10.1142/s0129156407004151.
Повний текст джерелаHenning, Stephan W., Luke Jenkins, Sidni Hale, Christopher G. Wilson, John Tennant, Justin Moses, Mike Palmer, and Robert N. Dean. "Manual Assembly of 400um Bumped-Die GaN Power Semiconductor Devices." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 000514–23. http://dx.doi.org/10.4071/isom-2012-poster_hale.
Повний текст джерелаChao, P. C., Kanin Chu, Jose Diaz, Carlton Creamer, Scott Sweetland, Ray Kallaher, Craig McGray, Glen D. Via, and John Blevins. "GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz." MRS Advances 1, no. 2 (2016): 147–55. http://dx.doi.org/10.1557/adv.2016.176.
Повний текст джерелаFaqir, M., A. Manoi, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, H. Blanck, S. Rochette, O. Vendier, and M. Kuball. "New GaN Power-Electronics Packaging Solutions: A Thermal Analysis Using Raman Thermography." Journal of Microelectronics and Electronic Packaging 8, no. 3 (July 1, 2011): 110–13. http://dx.doi.org/10.4071/imaps.297.
Повний текст джерелаLee, Chwan Ying, Yung Hsiang Chen, Lurng Shehng Lee, Chien Chung Hung, Cheng Tyng Yen, Suh Fang Lin, Rong Xuan, Wei Hung Kuo, Tzu Kun Ku, and Ming Jinn Tsai. "Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues." Materials Science Forum 717-720 (May 2012): 1303–6. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1303.
Повний текст джерелаMudiyanselage, Dinusha Herath, Dawei Wang, Yuji Zhao, and Houqiang Fu. "Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications." Journal of Applied Physics 131, no. 21 (June 7, 2022): 210901. http://dx.doi.org/10.1063/5.0088021.
Повний текст джерелаMusumeci, Salvatore, Fabio Mandrile, Vincenzo Barba, and Marco Palma. "Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review." Energies 14, no. 19 (October 6, 2021): 6378. http://dx.doi.org/10.3390/en14196378.
Повний текст джерелаFaqir, M., A. Manoi, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, H. Blanck, S. Rochette, O. Vendier, and M. Kuball. "New GaN Power-Electronics Packaging Solutions: A Thermal Analysis using Raman Thermography." International Symposium on Microelectronics 2010, no. 1 (January 1, 2010): 000446–49. http://dx.doi.org/10.4071/isom-2010-wa3-paper3.
Повний текст джерелаSoh, Mei, T. Teo, S. Selvaraj, Lulu Peng, Don Disney, and Kiat Yeo. "Heterogeneous Integration of GaN and BCD Technologies." Electronics 8, no. 3 (March 22, 2019): 351. http://dx.doi.org/10.3390/electronics8030351.
Повний текст джерелаWang, Li, and Chun Feng. "The International Research Progress of GaN-Based Microwave Electronic Devices." Advanced Materials Research 1053 (October 2014): 69–73. http://dx.doi.org/10.4028/www.scientific.net/amr.1053.69.
Повний текст джерелаAmit, Mr, Dipendra Singh Rawal, Sunil Sharma, Sonalee Kapoor, Robert Liashram, Rupesh K. Chaubey, Seema Vinayak, and Rajesh K. Sharma. "Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage." Defence Science Journal 68, no. 3 (April 16, 2018): 290. http://dx.doi.org/10.14429/dsj.68.12134.
Повний текст джерелаRugen, Sarah, Alexander Brunko, Felix Hoffmann та Nando Kaminski. "Power Cycling on Lateral GaN and β-Ga<sub>2</sub>O<sub>3</sub> Transistors". Materials Science Forum 1092 (6 червня 2023): 157–64. http://dx.doi.org/10.4028/p-gv3hl2.
Повний текст джерелаIslam, Naeemul, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, and Mohd Syamsul. "Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review." Crystals 12, no. 11 (November 7, 2022): 1581. http://dx.doi.org/10.3390/cryst12111581.
Повний текст джерелаAhmed, Osama, Yousuf Khan, Muhammad A. Butt, Nikolay L. Kazanskiy, and Svetlana N. Khonina. "Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter." Electronics 11, no. 8 (April 12, 2022): 1222. http://dx.doi.org/10.3390/electronics11081222.
Повний текст джерелаMANOHAR, S., A. PHAM, J. BROWN, R. BORGES, and K. LINTHICUM. "MICROWAVE GaN-BASED POWER TRANSISTORS ON LARGE-SCALE SILICON WAFERS." International Journal of High Speed Electronics and Systems 13, no. 01 (March 2003): 265–75. http://dx.doi.org/10.1142/s0129156403001600.
Повний текст джерелаCole, Z., B. McGee, J. Stabach, C. B. O'Neal, and B. Passmore. "A High Temperature, High Power Density Package for SiC and GaN Power Devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000208–13. http://dx.doi.org/10.4071/hiten-session6-paper6_3.
Повний текст джерелаUren, Michael J., and Martin Kuball. "Advances in AlGaN/GaN/SiC Microwave Devices." Materials Science Forum 556-557 (September 2007): 1017–22. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.1017.
Повний текст джерелаCui, Yixin, Yingqi Ma, Shipeng Shangguan, and Jianwei Han. "Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser." Photonics 9, no. 4 (April 18, 2022): 270. http://dx.doi.org/10.3390/photonics9040270.
Повний текст джерелаHaziq, Muhaimin, Norshamsuri Ali, Shaili Falina, Hiroshi Kawarada, and Mohd Syamsul. "Impact of Notch Structures on Transfer Characteristics of AlGaN/GaN HEMTs: A Simulation Study." Key Engineering Materials 947 (May 31, 2023): 15–20. http://dx.doi.org/10.4028/p-xxb0t7.
Повний текст джерелаBottaro, Enrico, Santi Agatino Rizzo, and Nunzio Salerno. "Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review." Energies 15, no. 9 (May 7, 2022): 3415. http://dx.doi.org/10.3390/en15093415.
Повний текст джерелаAnucia A., Josephine, D. Gracia, and Jackuline Moni D. "Comparative Analysis of Vertical Nanotube Field Effect Transistor (NTFET) Based on Channel Materials for Low Power Applications." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 21 (February 26, 2022): 26–33. http://dx.doi.org/10.37394/23201.2022.21.3.
Повний текст джерелаQUAH, H. J., K. Y. CHEONG, and Z. HASSAN. "FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE DEVELOPMENT OF HIGH POWER APPLICATIONS." Modern Physics Letters B 25, no. 02 (January 20, 2011): 77–88. http://dx.doi.org/10.1142/s021798491102564x.
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