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Статті в журналах з теми "GaN. InN. InGaN"

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Автор: Grafiati

Опубліковано: 9 березня 2024

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1

SEO*, Hye-Won. "Enhanced InN Solid Solubility in Pseudo-Binary InN-GaN (InGaN) Nanostructures." New Physics: Sae Mulli 66, no. 11 (November 30, 2016): 1440–43. http://dx.doi.org/10.3938/npsm.66.1440.

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2

Popov, Maxim N., Jürgen Spitaler, Lorenz Romaner, Natalia Bedoya-Martínez, and René Hammer. "Bayesian Optimization of Hubbard U’s for Investigating InGaN Superlattices." Electronic Materials 2, no. 3 (August 5, 2021): 370–81. http://dx.doi.org/10.3390/electronicmat2030025.

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In this study, we undertake a Bayesian optimization of the Hubbard U parameters of wurtzite GaN and InN. The optimized Us are then tested within the Hubbard-corrected local density approximation (LDA+U) approach against standard density functional theory, as well as a hybrid functional (HSE06). We present the electronic band structures of wurtzite GaN, InN, and (1:1) InGaN superlattice. In addition, we demonstrate the outstanding performance of the new parametrization, when computing the internal electric-fields in a series of [InN]1–[GaN]n superlattices (n = 2–5) stacked up along the c-axis.

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3

Kangawa, Yoshihiro, Tomonori Ito, Yoshinao Kumagai, and Akinori Koukitu. "Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE." Applied Surface Science 216, no. 1-4 (June 2003): 453–57. http://dx.doi.org/10.1016/s0169-4332(03)00396-9.

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4

Lai, Wei-Chih, Cheng-Hsiung Yen, and Shoou-Jinn Chang. "GaN-Based Green-Light-Emitting Diodes with InN/GaN Growth-Switched InGaN Wells." Applied Physics Express 6, no. 10 (October 1, 2013): 102101. http://dx.doi.org/10.7567/apex.6.102101.

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5

Geerts, Wim, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton, and Thomas Schmiedel. "Electrical transport in p-GaN, n-InN and n-InGaN." Solid-State Electronics 39, no. 9 (September 1996): 1289–94. http://dx.doi.org/10.1016/0038-1101(96)00047-0.

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6

Kusakabe, Kazuhide, Daichi Imai, Ke Wang, and Akihiko Yoshikawa. "InN/GaN short-period superlattices as ordered InGaN ternary alloys." physica status solidi (c) 13, no. 5-6 (December 9, 2015): 205–8. http://dx.doi.org/10.1002/pssc.201510306.

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7

Yu, Chun-Ta, Wei-Chih Lai, Cheng-Hsiung Yen, and Shoou-Jinn Chang. "InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes." Optical Materials Express 3, no. 11 (October 24, 2013): 1952. http://dx.doi.org/10.1364/ome.3.001952.

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8

Hazari, Arnab, Md Zunaid Baten, Lifan Yan, Joanna M. Millunchick, and Pallab Bhattacharya. "An InN/InGaN/GaN nanowire array guided wave photodiode on silicon." Applied Physics Letters 109, no. 19 (November 7, 2016): 191102. http://dx.doi.org/10.1063/1.4967439.

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9

Li, Yi, Bin Liu, Rong Zhang, Zili Xie, and Youdou Zheng. "Investigation of optical properties of InGaN–InN–InGaN/GaN quantum-well in the green spectral regime." Physica E: Low-dimensional Systems and Nanostructures 44, no. 4 (January 2012): 821–25. http://dx.doi.org/10.1016/j.physe.2011.12.014.

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10

Zhou, X. W., and R. E. Jones. "A Stillinger-Weber Potential for InGaN." Journal of Materials Science Research 6, no. 4 (September 27, 2017): 88. http://dx.doi.org/10.5539/jmsr.v6n4p88.

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Reducing defects in InGaN films deposited on GaN substrates has been critical to fill the “green” gap for solid-state lighting applications. To enable researchers to use molecular dynamics vapor deposition simulations to explores ways to reduce defects in InGaN films, we have developed and characterized a Stillinger-Weber potential for InGaN. We show that this potential reproduces the experimental atomic volume, cohesive energy, and bulk modulus of the equilibrium wurtzite / zinc-blende phases of both InN and GaN. Most importantly, the potential captures the stability of the correct phase of InGaN compounds against a variety of other elemental, alloy, and compound configurations. This is validated by the potential’s ability to predict crystalline growth of stoichiometric wurtzite and zinc-blende InxGa1-xN compounds during vapor deposition simulations where adatoms are randomly injected to the growth surface.

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11

Islam, SM, Vladimir Protasenko, Sergei Rouvimov, Huili (Grace) Xing, and Debdeep Jena. "High-quality InN films on GaN using graded InGaN buffers by MBE." Japanese Journal of Applied Physics 55, no. 5S (April 25, 2016): 05FD12. http://dx.doi.org/10.7567/jjap.55.05fd12.

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12

Kim, Taek-Seung, Sang-Woo Kim, Han-Ki Kim, and Ji-Myon Lee. "Surface confinement of the InN-rich phase in thick InGaN on GaN." Superlattices and Microstructures 40, no. 4-6 (October 2006): 545–50. http://dx.doi.org/10.1016/j.spmi.2006.08.003.

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13

Nakano, Yoshitaka, Liwen Sang, and Masatomo Sumiya. "Electrical Characterization of Thick InGaN Films for Photovoltaic Applications." MRS Proceedings 1635 (2014): 29–34. http://dx.doi.org/10.1557/opl.2014.205.

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ABSTRACTWe have electrically characterized a 300 nm-thick unintentionally-doped In0.09Ga0.91N film grown by metal-organic chemical vapor deposition on a GaN template, employing capacitance-voltage (C-V), thermal admittance spectroscopy (TAS), and steady-state photocapacitance spectroscopy (SSPC) techniques on Schottky barrier diodes. TAS measurements revealed a degenerating-like shallow-donor defect with a thermal activation energy of ∼7 meV, which most likely acts as a source of residual carriers with their concentration of ∼1017 cm-3 determined from C-V measurements. Additionally, SSPC measurements revealed two characteristic deep-level defects located at ∼2.07 and ∼3.05 eV below the conduction band, which were densely enhanced near the underlayer. These electronic defects are probably introduced by alloying InN with GaN.

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14

Xiang, Leilei, Enming Zhang, Wenyu Kang, Wei Lin, and Junyong Kang. "Material Design of Ultra-Thin InN/GaN Superlattices for a Long-Wavelength Light Emission." Micromachines 15, no. 3 (March 1, 2024): 361. http://dx.doi.org/10.3390/mi15030361.

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GaN heterostructure is a promising material for next-generation optoelectronic devices, and Indium gallium nitride (InGaN) has been widely used in ultraviolet and blue light emission. However, its applied potential for longer wavelengths still requires exploration. In this work, the ultra-thin InN/GaN superlattices (SL) were designed for long-wavelength light emission and investigated by first-principles simulations. The crystallographic and electronic properties of SL were comprehensively studied, especially the strain state of InN well layers in SL. Different strain states of InN layers were applied to modulate the bandgap of the SL, and the designed InN/GaN heterostructure could theoretically achieve photon emission of at least 650 nm. Additionally, we found the SL had different quantum confinement effects on electrons and holes, but an efficient capture of electron-hole pairs could be realized. Meanwhile, external forces were also considered. The orbital compositions of the valence band maximum (VBM) were changed with the increase in tensile stress. The transverse electric (TE) mode was found to play a leading role in light emission in normal working conditions, and it was advantageous for light extraction. The capacity of ultra-thin InN/GaN SL on long-wavelength light emission was theoretically investigated.

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15

Muthuraj, Vineeta R., Wenjian Liu, Henry Collins, Weiyi Li, Robert Hamwey, Steven P. DenBaars, Umesh K. Mishra, and Stacia Keller. "N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization." Crystals 13, no. 4 (April 19, 2023): 699. http://dx.doi.org/10.3390/cryst13040699.

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The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growth of InN was performed to explore the growth parameter space of the horizontal one-dimensional InN quantum wire-like structures on miscut substrates. The InN growth temperature, InN thickness, and NH3 flow during growth were varied to determine optimal quantum wire segment growth conditions. Quantum wire segment formation was observed through AFM images for N-polar InN samples with a low growth temperature of 540 °C and 1–2 nm of InN. Below 1 nm of InN, quantum dashes formed, and 2-D layers were formed above 2 nm of InN. One-dimensional anisotropy of the electrical conduction of N-polar InN wire-like samples was observed through TLM measurements. The sheet resistances of wire-like samples varied from 10–26 kΩ/□ in the longitudinal direction of the wire segments. The high sheet resistances were attributed to the close proximity of the treading dislocations at the InN/GaN interface and might be lowered by reducing the lattice mismatch of InN wire-like structures with the substrate using high lattice constant base layers such as relaxed InGaN.

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16

Chan, Michael C. Y., Kwok-On Tsang, E. Herbert Li, and Steven P. Denbaars. "Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 642–47. http://dx.doi.org/10.1557/s1092578300003185.

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Quantum well (QW) material engineering has attracted a considerable amount of interest from many people because of its ability to produce a number of optoelectronic devices. QW composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero-interface. The intermixing process is an attractive way to achieve the modification of the QW band structure. It is known that the band structure is a fundamental determinant for such electronic and optical properties of materials as the optical gain, the refractive index and the absorption. During the process, the as-grown square-QW compositional profile is modified to a graded profile, thereby altering the confinement profile and the subband structure in the QW. The blue-shifting of the wavelength in the intermixed QW structure is found in this process.In recent years, III-nitride semiconductors have attracted much attention. This is mainly due to their large bandgap range from 1.89eV (wurtzite InN) to 3.44eV (wurtzite GaN). InGaN/GaN quantum well structures have been used to achieve high lumens blue and green light emitting diodes. Such structures also facilitate the production of full colour LED displays by complementing the colour spectrum of available LEDs.In this paper, the effects of thermal annealing on the strained-layer InGaN/GaN QW will be presented. The effects of intermixing on the confinement potential of InGaN/GaN QWs have been theoretically analysed, with sublattices interdiffusion as the basis. This process is described by Fick’s law, with constant diffusion coefficients in both the well and the barrier layers. The diffusion coefficients depend on the annealing temperature, time and the activation energy of constituent atoms. The optical properties of intermixed InGaN/GaN QW structure of different interdiffusion rates have been theoretically analyzed for applications of novel optical devices. The photoluminescence studies and the intermixed QW modeling have been used to understand the effects of intermixing.

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17

Tu, Ru-Chin, Chang-Cheng Chuo, Shyi-Ming Pan, Yu-Mei Fan, Ching-En Tsai, Te-Chung Wang, Chun-Ju Tun, Gou-Chung Chi, Bing-Chi Lee, and Chien-Ping Lee. "Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting anin siturough SiNx interlayer inn-GaN layers." Applied Physics Letters 83, no. 17 (October 27, 2003): 3608–10. http://dx.doi.org/10.1063/1.1622441.

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18

Cheng, Yung-Chen, Cheng-Ming Wu, Meng-Kuo Chen, C. C. Yang, Zhe-Chuan Feng, Gang Alan Li, Jer-Ren Yang, Andreas Rosenauer, and Kung-Je Ma. "Improvements of InGaN∕GaN quantum-well interfaces and radiative efficiency with InN interfacial layers." Applied Physics Letters 84, no. 26 (June 28, 2004): 5422–24. http://dx.doi.org/10.1063/1.1767603.

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19

Hu, F. R., K. Ochi, Y. Zhao, and K. Hane. "InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer." physica status solidi (c) 4, no. 7 (June 2007): 2338–41. http://dx.doi.org/10.1002/pssc.200674734.

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20

Das, Aparna. "A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations -=SUP=-*-=/SUP=-." Оптика и спектроскопия 130, no. 3 (2022): 376. http://dx.doi.org/10.21883/os.2022.03.52165.1549-21.

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Light-emitting diodes (LEDs) based on group III-nitride semiconductors (GaN, AlN, and InN) are crucial elements for solid-state lighting and visible light communication applications. The most widely used growth plane for group III-nitride LEDs is the polar plane (c-plane), which is characterized by the presence of a polarization-induced internal electric field in heterostructures. It is possible to address long-standing problems in group III-nitride LEDs, by using semipolar and nonpolar orientations of GaN. In addition to the reduction in the polarization-induced internal electric field, semipolar orientations potentially offer the possibility of higher indium incorporation, which is necessary for the emission of light in the visible range. This is the preferred growth orientation for green/yellow LEDs and lasers. The important properties such as high output power, narrow emission linewidth, robust temperature dependence, large optical polarization ratio, and low-efficiency droop are demonstrated with semipolar LEDs. To harness the advantages of semipolar orientations, comprehensive studies are required. This review presents the recent progress on the development of semipolar InGaN/GaN quantum well LEDs. Semipolar InGaN LED structures on bulk GaN substrates, sapphire substrates, free-standing GaN templates, and on Silicon substrates are discussed including the bright prospects of group III-nitrides. Keywords: Group III-nitride semiconductor, semipolar, light-emitting diodes, InGaN/GaN quantum well.

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21

Hwang, Jeongwoo, Kwanjae Lee, Jin Soo Kim, Cheul-Ro Lee, In-Hwan Lee, Kwangjae Lee, Jin Hong Lee, et al. "Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer." Journal of Crystal Growth 370 (May 2013): 109–13. http://dx.doi.org/10.1016/j.jcrysgro.2012.08.049.

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22

Moses, Poul Georg, Maosheng Miao, Qimin Yan, and Chris G. Van de Walle. "Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN." Journal of Chemical Physics 134, no. 8 (February 28, 2011): 084703. http://dx.doi.org/10.1063/1.3548872.

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23

Андреев, Б. А., Д. Н. Лобанов, Л. В. Красильникова, К. Е. Кудрявцев, А. В. Новиков, П. А. Юнин, М. А. Калинников, Е. В. Скороходов, М. В. Шалеев та З. Ф. Красильник. "Особенности структурных и оптических свойств InGaN-слоев, полученных методом МПЭ ПА с импульсной подачей потоков металлов". Физика и техника полупроводников 55, № 9 (2021): 766. http://dx.doi.org/10.21883/ftp.2021.09.51292.22.

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This paper presents the results of studying the properties of InGaN layers with a high InN content (80-90%) obtained by molecular beam epitaxy with plasma activation of nitrogen on sapphire substrates with AlN / GaN buffer layers. The InGaN layers were formed using the metal modulated epitaxy (MME) method, as well as in nitrogen and metal rich conditions. It was found that the use of the MME method leads to a decrease in the density of threading dislocations in the InGaN layers. Nevertheless, despite the higher dislocation density, the smallest threshold of stimulated emission of ~ 20 kW / cm2 at 77 K was obtained for the In0.8Ga0.2N layer grown under nitrogen rich conditions, which is associated with the lowest background electron concentration in this sample (1.6•1019 cm-3).

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24

Jafar, Naveed, Jianliang Jiang, Heng Lu, Muhammad Qasim, and Hengli Zhang. "Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency." Crystals 13, no. 12 (November 23, 2023): 1623. http://dx.doi.org/10.3390/cryst13121623.

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The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other devices. There are several challenges in growing high-quality InGaN materials, including the lattice mismatch between GaN and InGaN causing stress and piezoelectric polarization, the relatively high vapor pressure of InN compared to GaN, and the low level of incorporation of indium in InGaN materials. Furthermore, carrier delocalization, Shockley–Read–Hall recombination, auger recombination, and electron leakage in InGaN light-emitting diodes (LEDs) are the main contributors to efficiency droop. The synthesis of high-quality III-V compounds can be achieved by optimizing growth parameters such as temperature, V/III ratios, growth rate, and pressure. By reducing the ammonia flow from 200 sccm to 50 sccm, increasing the growth rate from 0.1 to 1 m/h, and lowering the growth pressure from 250 to 150 Torr, the external quantum efficiency of III-V compounds can be improved at growth temperatures ranging from 800 °C to 500 °C. It is crucial to optimize the growth conditions to achieve high-quality materials. In addition, novel approaches such as adopting a microrod crystal structure, utilizing the piezo-phototronic effect, and depositing AlN/Al2O3 on top of the P-GaN and the electron-blocking layer can also contribute to improving the external quantum efficiency. The deposition of a multifunctional ultrathin layers of AlN/Al2O3 on top of the P-GaN can enhance the peak external quantum efficiency of InGaN blue LEDs by 29%, while the piezo-phototronic effect induced by a tensile strain of 2.04% results in a 183% increase in the relative electroluminescence intensity of the LEDs. This paper also discusses conventional and inverted p-i-n junction structures of LEDs.

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25

Yu, Chun-Ta, Wei-Chih Lai, Cheng-Hsiung Yen, Hsu-Cheng Hsu, and Shoou-Jinn Chang. "Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN." Optics Express 22, S3 (March 19, 2014): A633. http://dx.doi.org/10.1364/oe.22.00a633.

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26

Shioda, Tomonari, Masakazu Sugiyama, Yukihiro Shimogaki, and Yoshiaki Nakano. "Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range." Journal of Crystal Growth 311, no. 10 (May 2009): 2809–12. http://dx.doi.org/10.1016/j.jcrysgro.2009.01.013.

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27

Nagai, Katsuya, Toru Akiyama, Kohji Nakamura, and Tomonori Ito. "A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate." ECS Meeting Abstracts MA2020-02, no. 26 (November 23, 2020): 1831. http://dx.doi.org/10.1149/ma2020-02261831mtgabs.

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28

Nagai, Katsuya, Toru Akiyama, Kohji Nakamura, and Tomonori Ito. "A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate." ECS Transactions 98, no. 6 (September 23, 2020): 155–64. http://dx.doi.org/10.1149/09806.0155ecst.

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29

Chandrasekhar, D., D. J. Smith, S. Strite, M. E. Lin, and H. Morkoc. "Characterization of group Ill-nitrides by high-resolution electron microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 846–47. http://dx.doi.org/10.1017/s0424820100171961.

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Анотація:

The Group III-nitride semiconductors A1N, GaN, and InN are of interest for their potential applications in short wavelength optoelectronic devices. This interest stems from their direct wideband gapswhich range from 1.9 eV (InN), to 3.4 eV (GaN), to 6.2 eV (A1N). If high quality nitride films can besuccessfully grown, then optoelectronic devices with wavelengths ranging from the visible to the deepultraviolet region of the electromagnetic spectrum are theoretically possible. Recently, LED's basedon GaN and InGaN QW's were demonstrated. Also, their excellent thermal properties make them ideal candidates for high-temperature and high-power devices. Many problems plague nitride research, especiallythe lack of suitable substrate materials that are both lattice- and thermal-matched to the nitrides. The crystal structure of these materials is strongly influenced by the substrate and its orientation.For example, although the equilibrium crystal structure of these nitrides is wurtzite, zincblende phase can be nucleated under nonequilibrium growth conditions but only on cubic substrates. These zincblende nitrides represent new material systems with properties that differ from their wurtzite counterparts. Recently, good quality material has been produced employing metalorganic vapor phase epitaxy (MOVPE) and reactive molecular beam epitaxy (RMBE) techniques with incorporation of buffer layers.

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30

Nee, Tzer-En, Jen-Cheng Wang, Bo-Yan Zhong, Jui-Ju Hsiao, and Ya-Fen Wu. "Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes." Nanomaterials 11, no. 6 (May 30, 2021): 1449. http://dx.doi.org/10.3390/nano11061449.

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Анотація:

An efficiency droop in GaN-based light-emitting diodes (LED) was characterized by examining its general thermophysical parameters. An effective suppression of emission degradation afforded by the introduction of InGaN/GaN heterobarrier structures in the active region was attributable to an increase in the capture cross-section ratios. The Debye temperatures and the electron–phonon interaction coupling coefficients were obtained from temperature-dependent current-voltage measurements of InGaN/GaN multiple-quantum-well LEDs over a temperature range from 20 to 300 K. It was found that the Debye temperature of the LEDs was modulated by the InN molar fraction in the heterobarriers. As far as the phonons involved in the electron–phonon scattering process are concerned, the average number of phonons decreases with the Debye temperature, and the electron–phonon interaction coupling coefficients phenomenologically reflect the nonradiative transition rates. We can use the characteristic ratio of the Debye temperature to the coupling coefficient (DCR) to assess the efficiency droop phenomenon. Our investigation showed that DCR is correlated to quantum efficiency (QE). The light emission results exhibited the high and low QEs to be represented by the high and low DCRs associated with low and high injection currents, respectively. The DCR can be envisioned as a thermophysical marker of LED performance, not only for efficiency droop characterization but also for heterodevice structure optimization.

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31

Che, Song-Bek, Wataru Terashima, Yoshihiro Ishitani, Akihiko Yoshikawa, Takeyoshi Matsuda, Hirotatsu Ishii, and Seikoh Yoshida. "Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy." Applied Physics Letters 86, no. 26 (June 27, 2005): 261903. http://dx.doi.org/10.1063/1.1954877.

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32

Kadys, A., T. Malinauskas, T. Grinys, M. Dmukauskas, J. Mickevičius, J. Aleknavičius, R. Tomašiūnas, et al. "Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition." Journal of Electronic Materials 44, no. 1 (November 12, 2014): 188–93. http://dx.doi.org/10.1007/s11664-014-3494-6.

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33

Zhang, Zi-Hui, Wei Liu, Zhengang Ju, Swee Tiam Tan, Yun Ji, Zabu Kyaw, Xueliang Zhang, Liancheng Wang, Xiao Wei Sun, and Hilmi Volkan Demir. "InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination." Applied Physics Letters 105, no. 3 (July 21, 2014): 033506. http://dx.doi.org/10.1063/1.4891334.

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34

Reed, M. L., E. D. Readinger, C. G. Moe, H. Shen, M. Wraback, A. Syrkin, A. Usikov, O. V. Kovalenkov, and V. A. Dmitriev. "Benefits of negative polarization charge inn-InGaN onp-GaN single heterostructure light emitting diode withp-side down." physica status solidi (c) 6, no. 2 (February 2009): 585–88. http://dx.doi.org/10.1002/pssc.200880401.

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35

Che, Songbek, Akihiko Yuki, Hiroshi Watanabe, Yoshihiro Ishitani, and Akihiko Yoshikawa. "Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region." Applied Physics Express 2 (January 23, 2009): 021001. http://dx.doi.org/10.1143/apex.2.021001.

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36

Phước, Dương Đình, та Đinh Như Thảo. "SỰ KẾT CẶP CỦA PHONON-PLASMON QUANG DỌC TRONG CÁC LỚP BÁN DẪN InGaN". Hue University Journal of Science: Natural Science 130, № 1A (10 березня 2021): 13–21. http://dx.doi.org/10.26459/hueunijns.v130i1a.5964.

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Trong bài báo này, chúng tôi khảo sát sự tồn tại của các mode kết cặp phonon quang dọc (LO phonon)-plasmon trong các lớp bán dẫn InGaN bằng lý thuyết hàm điện môi. Chúng tôi sử dụng một sóng hồng ngoại phân cực p chiếu xiên lên các lớp màng mỏng bán dẫn, từ đó chúng tôi quan sát thấy sự xuất hiện của bốn cực tiểu phân biệt trong phổ truyền qua của vật liệu. Hai cực tiểu đầu tiên tương ứng với các mode phonon quang ngang của hai bán dẫn thành phần InN và GaN, trong khi hai cực tiểu còn lại là các mode kết cặp LO phonon-plasmon. Bên cạnh đó, chúng tôi đã lần đầu tiên đưa ra được một phương trình dùng để tính số tần số của các mode kết cặp này. Ngoài ra, chúng tôi cũng khảo sát chi tiết ảnh hưởng của mật độ electron lên các mode kết cặp LO phonon quang dọc – plasmon.

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Emanuel Thomet, Jonathan, Aman Kamlesh Singh, Mélanie Nelly Rouèche, Nils Toggwyler, Franz-Josef Haug, Gabriel Christmann, Sylvain Nicolay, et al. "Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition." Journal of Vacuum Science & Technology A 40, no. 6 (December 2022): 063102. http://dx.doi.org/10.1116/6.0002039.

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This paper reports on the fabrication of In[Formula: see text]Ga[Formula: see text]N (InGaN) layers with various compositions ranging from InN to GaN using a cost-effective low-temperature plasma-enhanced chemical vapor deposition (PECVD) method and analyzes the influence of deposition parameters on the resulting films. Single-phase nanocrystalline InGaN films with crystallite size up to 30 nm are produced with deposition temperatures in the range of 180–250 [Formula: see text]C using the precursors trimethylgallium, trimethylindium, hydrogen, nitrogen, and ammonia in a parallel-plate type RF-PECVD reactor. It is found that growth rate is a primary determinant of crystallinity, with rates below 6 nm/min producing the most crystalline films across a range of several compositions. Increasing In content leads to a decrease in the optical bandgap, following Vegard’s law, with bowing being more pronounced at higher growth rates. Significant free-carrier absorption is observed in In-rich films, suggesting that the highly measured optical bandgap (about 1.7 eV) is due to the Burstein–Moss shift.

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38

Justice, J., A. Kadiyala, J. Dawson, and D. Korakakis. "Group III-Nitride Based Electronic and Optoelectronic Integrated Circuits for Smart Lighting Applications." MRS Proceedings 1492 (2013): 123–28. http://dx.doi.org/10.1557/opl.2013.369.

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ABSTRACTWith general lighting applications being responsible for over 20% of the energy consumption in the United States, advances in solid-state lighting have the potential for considerable energy and cost savings. The United States Department of Energy predicts that the increased use of solid state lighting will result in a 46% lighting consumption energy savings by the year 2030. Smart lighting systems have the potential for reducing energy costs while also providing a means for short distance data transmission via free space optics. The group III-nitride (III-N) family of materials, including aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), their binary and ternary alloys, are uniquely situated to provide light emitting diodes (LEDs) across the full visible spectrum, photodetectors (PDs) and high power, high speed transistors. In this work, aluminum gallium nitride (AlGaN) / GaN high electron mobility transistors (HEMTs) and indium gallium nitride (InGaN) photodiodes (PDs) are fabricated and characterized. HEMTs and LEDs (or PDs) are grown on the same substrate for the purpose of creating electronic and optoelectronic integrated circuits.

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Yarar, Z., B. Ozdemir, and M. Ozdemir. "Transport and Mobility Properties of Bulk Indium Nitride (InN) and a Two-Dimensional Electron Gas in an InGaN/GaN Quantum Well." Journal of Electronic Materials 36, no. 10 (September 11, 2007): 1303–12. http://dx.doi.org/10.1007/s11664-007-0210-9.

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40

Łepkowski, S. P., and J. A. Majewski. "Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells." Solid State Communications 131, no. 12 (September 2004): 763–67. http://dx.doi.org/10.1016/j.ssc.2004.07.002.

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41

Poliani, E., M. R. Wagner, J. S. Reparaz, M. Mandl, M. Strassburg, X. Kong, A. Trampert, C. M. Sotomayor Torres, A. Hoffmann, and J. Maultzsch. "Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering." Nano Letters 13, no. 7 (June 28, 2013): 3205–12. http://dx.doi.org/10.1021/nl401277y.

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42

Kangawa, Y., T. Ito, Y. Kumagai, and A. Koukitu. "Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE." physica status solidi (c), no. 7 (December 2003): 2575–79. http://dx.doi.org/10.1002/pssc.200303538.

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43

Abboudi, Hassan, Haddou EL Ghazi, Redouane En-nadir, Mohamed A. Basyooni-M. Kabatas, Anouar Jorio, and Izeddine Zorkani. "Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness." Nanomaterials 14, no. 1 (January 1, 2024): 104. http://dx.doi.org/10.3390/nano14010104.

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This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.

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Kent, P. R. C., Gus L. W. Hart, and Alex Zunger. "Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys." Applied Physics Letters 81, no. 23 (December 2, 2002): 4377–79. http://dx.doi.org/10.1063/1.1524299.

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45

Listya Ningrum, Andi Alfina, and A. Andriyani Asra. "Pemanfaatan Teknik SCAMPER dalam Meningkatkan HOTS (High Order of Thinking Skills) pada Mata Kuliah Pengembangan Materi Ajar Bahasa dan Sastra Indonesia Mahasiswa Universitas Muhammadiyah Bulukumba." Jurnal Ilmiah Telaah 6, no. 1 (January 20, 2021): 11. http://dx.doi.org/10.31764/telaah.v6i1.3350.

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Abstrak: Salah satu tujuan pendidikan khususnya di Perguruan Tinggi adalah agar mahasiswa memiliki kemampuan berpikir kreatif dan kritis yang dikenal dengan istilah HOTS (Higher Order of Thinking Skills). Tujuan yang ingin dicapai dalam penelitian ini adalah untuk mengetahui peningkatan HOTS (Higher Order of Thinking Skills) mahasiswa pada mata kuliah Pengembangan Materi Ajar Bahasa dan Sastra Indonesia Universitas Muhammadiyah Bulukumba. Penelitian ini menggunakan jenis penelitian tindakan kelas dengan objek penelitian adalah mahasiswa Semester 5 (INA 17 A) Program Studi Pendidikan Bahasa Indonesia yang berjumlah 32 orang. Teknik pengumpulan data berupa hasil belajar dan aktivitas mahasiswa dalam perkuliahan. Hasil belajar dengan menggunakan tes dan aktivitas mahasiswa berupa lembar observasi. Analisis data dilakukan dengan mendeskripsikan hasil pengamatan dan analisis statistik sederhana untuk menghitung hasil tes mahasiswa. Hasil tes pada siklus I menunjukkan bahwa 31% (10 orang) mahasiswa yang memeroleh ketuntasan sedangkan 69% (22 orang) mahasiswa yang belum mencapai ketuntasan. Berdasarkan hal tersebut, penelitian dilanjutkan ke siklus kedua. Hasil tes pada siklus II menunjukkan peningkatan yang signifikan dimana sebesar 87% (28 orang) mahasiswa yang berhasil mencapai ketuntasan belajar sedangkan 13% (4 orang) mahasiswa belum tuntas. Dengan demikian, dapat disimpulkan pemanfaatan teknik SCAMPER terbukti efektif dalam meningkatkan HOTS (Higher Order of Thinking Mahasiswa) mahasiswa pada mata kuliah Pengembangan Materi Ajar Bahasa dan Sastra Indonesia. Abstract: One of the education goals especially in higher education is that students have creative and critical thinking skills known as higher order thinking skills or hots. The aim of this research is to find out the improvement of the students’ higher order thinking skills in the subject of Teaching Materials Development of Indonesian Language and Literature at Universitas Muhammadiyah Bulukumba. This study used a classroom action research with research objects that consist of 32 students in the 5th semester students of class 17 A from Indonesian Language Education Department. Techniques of collecting data used are students’ learning outcomes and students’ activities during lectures. Students’ learning outcomes were measured with tests and students’ activities were taken by using observation sheets. Data analysis was carried out by describing the results of observations and simple statistical analysis to calculate students’ test results. The test results in the first cycle show that 31 percent of students or 10 students can reach the learning completeness criteria, while 69 percent of students or 22 students cannot reach the completeness criteria of learning. Based on this research result, the actions were continoud to the second cycle. The second cycle test results show a significant increase in the students’ higher order thinking skills in that 87 percent of students or 28 students are able to achieve the learning completeness criteria and 13 percent of students or 4 students are not able to gain the completeness. Thus, it can be concluded that the SCAMPER technique proves effective in increasing the students’ higher order thinking skills in the subject of Teaching Materials Development of Indonesian Language and Literature.

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46

Che, Songbek, Takuro Shinada, Tomoyasu Mizuno, Yoshihiro Ishitani, and Akihiko Yoshikawa. "Polarity dependence of In-rich InGaN and InN/InGaN MQWs." MRS Proceedings 892 (2005). http://dx.doi.org/10.1557/proc-0892-ff06-03.

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AbstractIn-rich InGaN films (XIn>0.5) and InN/InGaN multi-quantum wells were grown on Ga- and N-polarity GaN templates by radio-frequency plasma-assisted molecular beam epitaxy. The In-polarity InGaN films grown at 450°C showed superior crystalline quality and smoother surface morphology compared to the N-polarity samples, which were grown at 500∼550°C. By using the In-polarity In0.7Ga0.3N as a barrier layer, the InN/InGaN multi-quantum wells were successfully fabricated on the III-element polarity GaN templates at 450°C. Fine periodic structures and strong photoluminescence emission around optical communication wavelength were obtained from the In-polarity MQWs. These results indicate that the In-polarity growth is preferred to obtain a high quality InGaN film and the InN/InGaN MQWs in spite of its lower growth temperature.

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47

Yeo, Y. C., T. C. Chong, and M. F. Li. "Valence Band Parameters for Wurtzite GaN and InN." MRS Proceedings 482 (1997). http://dx.doi.org/10.1557/proc-482-923.

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AbstractTheoretical studies and design of quantum well lasers employing InGaN require material parameters for both GaN and InN. However, the Luttinger-like effective-mass parameters for InN are currently unavailable. In this work, we extract effective-mass parameters for wurtzite GaN and InN from their electronic band structures calculated using the Empirical Pseudopotential Method (EPM). We obtain the electron and hole (including the heavy- (HH), light- (LH), and crystal-field split-off (CH) holes) effective-masses at the Γ point in the kz and the in-plane kx-ky plane) directions using a parabolic fit. In addition, the hole effective-mass parameters are derived using the 6×6 effective-mass Hamiltonian and the k.p method. Our results will be useful for material design in wide-gap nitride-based semiconductor lasers containing InGaN.

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48

Binsted, Peter W., Kenneth Scott A. Butcher, Dimiter Alexandrov, Penka Terziyska, Dimka Georgieva, Rositsa Gergova, and Vasil Georgiev. "InN on GaN Heterostructure Growth by Migration Enhanced Epitaxial Afterglow (MEAglow)." MRS Proceedings 1396 (2012). http://dx.doi.org/10.1557/opl.2012.15.

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ABSTRACTIn this paper we discuss the formation of InN on GaN heterostructures. Film growth was accomplished using a new method coined Migration Enhanced Epitaxial Afterglow (MEAglow), an improved form of pulsed delivery Plasma Enhanced Chemical Vapour Deposition (PECVD) [1]. Initial x-ray diffraction (XRD) analysis results indicated that an InGaN alloy layer formed under the InN during growth. No GaN was seen from the original buffer layer. It was postulated that indium metal deposited prior to complete nitridation diffused into the relatively thin GaN layer producing InGaN. To verify the integrity of the insulating GaN layer, a third party GaN substrate was substituted. Results were unchanged. Parameters were then modified to reduce the amount of indium used for the initial metal deposition. XRD results indicated a sharper interface between the semi-insulating GaN and conductive InN layer. Hall Effect measurements are included. We’ve shown that the growth of a device suitable heterostructure is possible using the MEAglow technique.

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49

Singh, R., and T. D. Moustakas. "Growth of InGaN Films by MBE at the Growth Temperature of GaN." MRS Proceedings 395 (1995). http://dx.doi.org/10.1557/proc-395-163.

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ABSTRACTWe report the growth of InGaN alloys over practically the entire composition range at the growth temperature of GaN (700–800 °C) by MBE. We found that when the grown films are thick (> 0.3 μm), incorporation of more than about 30% indium results in phase separation of InN, which is consistent with spinodal decomposition. On the other hand we discovered that such phase separation is absent in thin InGaN films ( < 600Å) grown as GaN/InGaN/GaN heterostructures. In such configurations we were able to incorporate up to 81% In, which is the highest yet reported.

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50

Vartuli, C. B., J. W. Lee, J. D. MacKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, R. J. Shul, et al. "ICP Dry Etching of III-V Nitrides." MRS Proceedings 468 (1997). http://dx.doi.org/10.1557/proc-468-393.

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ABSTRACTInductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH4 based chemistries. The etch rates increased with increasing dc bias. At low rf power (150W), the etch rates increased with increasing ICP power, while at 350W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were ≤ 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

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