Готові списки джерел за темами / GaN/AlN/Si

Добірка наукової літератури з теми "GaN/AlN/Si"

Автор: Grafiati
Опубліковано: 6 вересня 2023

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Статті в журналах з теми "GaN/AlN/Si"

1

Середин, П. В., К. А. Барков, Д. Л. Голощапов, А. С. Леньшин, Ю. Ю. Худяков, И. Н. Арсентьев, А. А. Лебедев та ін. "Влияние предобработки подложки кремния на свойства пленок GaN, выращенных методом хлорид-гидридной газофазной эпитаксии". Физика и техника полупроводников 55, № 8 (2021): 704. http://dx.doi.org/10.21883/ftp.2021.08.51144.9660.

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Анотація:
Сообщается о росте методом хлорид-гидридной газофазной эпитаксии пленки GaN на предварительно обработанных кремниевых подложках Si(001) через буферный слой AlN. Продемонстрировано, что использование предложенной технологии привело к образованию в подложке Si переходного субслоя, дальнейший рост на котором обеспечил формирование столбчатых зерен GaN, между которыми находится тонкая прослойка фазы AlN. Эпитаксиальная пленка GaN имеет низкую величину остаточных напряжений, что нашло свое отражение в интенсивной люминесценции. Ключевые слова: хлорид-гидридная газофазная эпитаксия, фотолюминесценция, GaN, AlN, Si.
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2

Yang, Yibin, Lingxia Zhang, and Yu Zhao. "Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates." Crystals 10, no. 9 (September 1, 2020): 772. http://dx.doi.org/10.3390/cryst10090772.

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Анотація:
Due to the absorption of opaque Si substrates, the luminous efficiency of GaN-based light-emitting diodes (LEDs) on Si substrates is not high. So, in this work, we insert AlN/GaN distributed Bragg reflectors (DBRs) to improve the light output of GaN-based LEDs on Si (111) substrates grown via metal organic chemical vapor deposition (MOCVD). In order to obtain the highest reflectivity of the AlN/GaN DBR stop band, the growth parameters of AlN/GaN DBRs are optimized, including the growth temperature, the V/III ratio and the growth pressure. As a consequence, the interfaces of the optimal 9-pair AlN/GaN DBRs become abrupt, and the reflectivity of the DBR stop band is as high as 85.2%, near to the calculated value (92.5%). Finally, crack-free GaN-based LEDs with 5-pair AlN/GaN DBRs are grown on Si (111) substrates. The light output of the DBR-based LED is evidently enhanced by 41.8% at the injection current of 350 mA, compared with the conventional DBR-based LED without DBRs. These results pave the way for the luminous efficiency improvement of future green and red GaN-based LEDs grown on Si substrates.
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3

Кукушкин, С. А., А. В. Осипов, В. Н. Бессолов, Е. В. Коненкова та В. Н. Пантелеев. "Остановка и разворот дислокаций несоответствия при росте нитрида галлия на подложках SiC/Si". Физика твердого тела 59, № 4 (2017): 660. http://dx.doi.org/10.21883/ftt.2017.04.44266.287.

Повний текст джерела
Анотація:
Обнаружен эффект изменения направления распространения дислокации несоответствия при росте слоев GaN на поверхности структуры AlN/SiC/Si(111). Эффект заключается в том, что при достижении слоем GaN, растущим на AlN/SiC/Si(111) определенной толщины ~300 nm, дислокации несоответствия первоначально, распространяющиеся вдоль оси роста слоя останавливаются и начинают двигаться в перпендикулярном к оси роста направлению. Построена теоретическая модель зарождения AlN и GaN на грани (111) SiC/Si, объясняющая эффект изменения направления движения дислокации несоответствия. Обнаружен экспериментально и объяснен теоретически эффект смены механизма зарождения с островкового для AlN на SiC/Si(111) на послойный при зарождении слоя GaN на AlN/SiC/Si. Авторы благодарят за финансовую поддержку Российский научный фонд (грант N 14-12-01102). Работа выполнена при использовании оборудования Уникальной научной установки (УНУ) Физика, химия и механика кристаллов и тонких пленок" ФГУН ИПМаш РАН (г. Санкт-Петербург). DOI: 10.21883/FTT.2017.04.44266.287
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4

Бессолов, В. Н., Е. В. Гущина, Е. В. Коненкова, С. Д. Коненков, Т. В. Львова, В. Н. Пантелеев та М. П. Щеглов. "Синтез гексагональных слоев AlN и GaN на Si(100)-подложке методом хлоридной газофазной эпитаксии". Журнал технической физики 89, № 4 (2019): 574. http://dx.doi.org/10.21883/jtf.2019.04.47315.152-18.

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Анотація:
AbstractSynthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation of a GaN/AlN structure. It has been found that in the case of a (100)Si substrate, GaN nucleates on buffer AlN layers that may have two crystallographic orientations in contrast to a Si(111) substrate, on which a buffer layer may have only one orientation. It has been shown that the treatment of the Si(100) substrate in an aqueous solution of (NH_4)_2S decreases the FWHM of the rocking curve for GaN(0002) by a factor of 1.5.
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5

Goswami, Ramasis, Syed Qadri, Neeraj Nepal, and Charles Eddy. "Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures." Coatings 11, no. 4 (April 20, 2021): 482. http://dx.doi.org/10.3390/coatings11040482.

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Анотація:
We demonstrate the growth of ultra-thin AlN films on Si (111) and on a GaN/sapphire (0001) substrate using atomic layer epitaxy in the temperature range of 360 to 420 °C. Transmission electron microscopy and X-ray diffraction were used to characterize the interfaces, fine scale microstructure, and the crystalline quality of thin films. Films were deposited epitaxily on Si (111) with a hexagonal structure, while on the GaN/sapphire (0001) substrate, the AlN film is epitaxial and has been deposited in a metastable zinc-blende cubic phase. Transmission electron microscopy reveals that the interface is not sharp, containing an intermixing layer with cubic AlN. We show that the substrate, particularly the strain, plays a major role in dictating the crystal structure of AlN. The strain, estimated in the observed orientation relation, is significantly lower for cubic AlN on hexagonal GaN as compared to the hexagonal AlN on hexagonal GaN. On the Si (111) substrate, on the other hand, the strain in the observed orientation relation is 0.8% for hexagonal AlN, which is substantially lower than the strain estimated for the cubic AlN on Si(111).
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6

Nikishin, Sergey A., Nikolai N. Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave de Peralta, George A. Seryogin, Mark Holtz, et al. "High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 467–73. http://dx.doi.org/10.1557/s1092578300004658.

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Анотація:
We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130−1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick ( > 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).
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7

Tajalli, Alaleh, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, et al. "Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment." Micromachines 11, no. 1 (January 17, 2020): 101. http://dx.doi.org/10.3390/mi11010101.

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Анотація:
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analyzed three different structures grown on silicon substrates: AlN/Si, AlGaN/AlN/Si, C:GaN/AlGaN/AlN/Si. The results demonstrate that: (i) the AlN layer grown on silicon has a breakdown field of 3.25 MV/cm, which further decreases with temperature. This value is much lower than that of highly-crystalline AlN, and the difference can be ascribed to the high density of vertical leakage paths like V-pits or threading dislocations. (ii) the AlN/Si structures show negative charge trapping, due to the injection of electrons from silicon to deep traps in AlN. (iii) adding AlGaN on top of AlN significantly reduces the defect density, thus resulting in a more uniform sample-to-sample leakage. (iv) a substantial increase in breakdown voltage is obtained only in the C:GaN/AlGaN/AlN/Si structure, that allows it to reach VBD > 800 V. (v) remarkably, during a vertical I–V sweep, the C:GaN/AlGaN/AlN/Si stack shows evidence for positive charge trapping. Holes from C:GaN are trapped at the GaN/AlGaN interface, thus bringing a positive charge storage in the buffer. For the first time, the results summarized in this paper clarify the contribution of each buffer layer to vertical leakage and breakdown.
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8

Follstaedt, D. M., J. Han, P. Provencio, and J. G. Fleming. "Microstructure of GaN Grown on (111) Si by MOCVD." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 397–402. http://dx.doi.org/10.1557/s1092578300002787.

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Анотація:
Gallium nitride was grown on (111) Si by MOCVD by depositing an AlN buffer at 1080°C followed by GaN at 1060°C. The 2.2 μm layer cracked along {1-100} planes upon cooling to room temperature, but remained adherent. We were nonetheless able to examine the material between cracks with TEM. The character and arrangement of dislocations are much like those of GaN grown on Al2O3: ∼2/3 pure edge and ∼1/3 mixed (edge + screw), arranged in boundaries around domains of GaN that are slightly misoriented with respect to neighboring material. The 30 nm AlN buffer is continuous, indicating that AlN wets the Si, in contrast to GaN on Al2O3.
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9

Vashishtha, Pargam, Pukhraj Prajapat, Lalit Goswami, Aditya Yadav, Akhilesh Pandey, and Govind Gupta. "Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector." Electronic Materials 3, no. 4 (December 9, 2022): 357–67. http://dx.doi.org/10.3390/electronicmat3040029.

Повний текст джерела
Анотація:
Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at varying temperatures (770–830 °C), followed by GaN growth using plasma-assisted molecular beam epitaxy. The investigation revealed that the comparatively lower temperature AlN buffer layer was responsible for stress and lattice strain relaxation and was realized as the GaN nano-obelisk structures. Contrarily, the increased temperature of the AlN growth led to the formation of GaN nanopyramidal and nanowax/wane structures. These grown GaN/AlN/Si heterostructures were utilized to develop photodetectors in a metal–semiconductor–metal geometry format. The performance of these fabricated optoelectronic devices was examined under ultraviolet illumination (UVA), where the GaN nano-obelisks-based device attained the highest responsivity of 118 AW−1. Under UVA (325 nm) illumination, the designed device exhibited a high detectivity of 1 × 1010 Jones, noise equivalent power of 1 × 10−12 WHz−1/2, and external quantum efficiency of 45,000%. The analysis revealed that the quality of the AlN buffer layer significantly improved the optoelectronic performance of the device.
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10

Мизеров, А. М., С. А. Кукушкин, Ш. Ш. Шарофидинов, А. В. Осипов, С. Н. Тимошнев, К. Ю. Шубина, Т. Н. Березовская, Д. В. Мохов та А. Д. Буравлев. "Метод управления полярностью слоев GaN при эпитаксиальном синтезе GaN/AlN гетероструктур на гибридных подложках SiC/Si". Физика твердого тела 61, № 12 (2019): 2289. http://dx.doi.org/10.21883/ftt.2019.12.48535.06ks.

Повний текст джерела
Анотація:
The effect of GaN polarity inversion from N- to Ga-face during the successive growth of GaN layers by plasma assisted molecular beam epitaxy and halide vapor phase epitaxy on hybrid SiC/Si(111) substrates was found. A new method of the formation of crack-free Ga-face GaN/AlN heterostructures on hybrid SiC/Si(111) substrates has been developed. In this method the two stage growth of GaN layers is used. At the first stage, the N-face GaN transition layer was grown on the SiC/Si(111) surface by plasma assisted molecular beam epitaxy. At the second stage, the AlN interlayer was first grown by halide vapor phase epitaxy on N-face GaN transition layer. After that the Ga-face GaN layer was synthesized by halide vapor phase epitaxy atop of the AlN interlayer. Also it was found that etching in a KOH solution affects only the N-face GaN transition layer and leads to its complete removal, which result in complete separation of the main Ga-face GaN layer from the SiC/Si(111) substrate. The method allows you to grow free from cracks and unstressed thick layers of GaN, and transfer them to the foreign substrates.
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Більше джерел

Дисертації з теми "GaN/AlN/Si"

1

Ive, Tommy. "Growth and investigation of AlN/GaN and (Al,In)N/GaN based Bragg reflectors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15395.

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Анотація:
Die Synthese von AlN/GaN- und (Al,In)N/GaN-Braggreflektoren wird untersucht. Die Strukturen wurden mittels plasmaunterstützter Molekularstrahlepitaxie auf 6H-SiC(0001)-Substraten abgeschieden. Ferner wurde der Einfluß der Si-Dotierung auf die Oberflächenmorphologie sowie die strukturellen und elektrischen Eigenschaften der AlN/GaN-Braggreflektoren untersucht. Es wurden rißfreie Braggreflektoren mit einer hohen Reflektivität (R>99%) und einem bei 450 nm zentrierten Stopband erhalten. Die Si-dotierten Strukturen weisen eine ohmsche I-V-Charakteristik im gesamten Meßbereich sowie einen spezifischen Widerstand von 2-4 mOhmcm2 auf. Die Ergebnisse der (Al,In)N-Wachstumsversuche wurden in einem Phasendiagramm zusammengefaßt, welches den optimalen Parameterraum für (Al,In)N klar aufzeigt.
We study the synthesis of AlN/GaN and (Al,In)N/GaN Bragg reflectors. The structures were grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) substrates. In addition, we study the impact of Si-doping on the surface morphology and the structural and electrical properties of the AlN/GaN Bragg reflectors. Crack-free and high-reflectance (R>99%) Bragg reflectors were achieved with a stopband centered at 450 nm. The Si-doped structures exhibit ohmic I-V behavior in the entire measurement range. The specific series resistance is 2-4 mOhmcm2. The results of the (Al,In)N growth experiments are summarized in a phase diagram which clearly shows the optimum growth window for (Al,In)N.
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2

Pu, Jun-Liang, and 蒲俊良. "Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/e394c2.

Повний текст джерела
Анотація:
碩士
崑山科技大學
電機工程研究所
91
In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal organic chemical vapor phase deposition (MOCVD), X-ray diffraction (XRD), photoluminescence and AFM measurement. Then we do the systematic research on GaN under different growth condition. We analyze the GaN crystal quality affected by the growth flow of buffer layer. Finally, we can observe GaN crystal layer of surface level and smooth by AFM and high multiple optics microscope measurement. We study the film GaN crystal quality by X-ray diffraction (XRD) measurement and the shift of the PL spectra under different excitation light intensity.
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3

Su, Wei-shiang, and 蘇暐翔. "Studies of GaN thin films and InGaN/GaN quantum wells on Si substrates with AlN buffer layers." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/80232853635099693506.

Повний текст джерела
Анотація:
碩士
國立臺南大學
材料科學系碩士班
100
We use micro-Raman spectra, scanning electron microscope, atomic force microscope, and photoluminescence spectra to study the properties of III-V nitride semiconductor materials grown on (111) Si substrates with different growth conditions of AlN buffer layers. The studies are divided into two parts. The first part is the growth of multiple AlN buffer layers with the decrease of growth temperature from 1000 to 700 oC. For the increase of the numbers of AlN buffer layer, it shows the blue shift of near band edge light emission energy and intensity, high energy shift of E2high and A1(LO) scattering modes of GaN from micro-Raman spectra, pronounced decrease of cracks density in scanning electron microscope images, and the reduced surface roughness in atomic force microscope images. These results indicate that such growth conditions of AlN buffer layers can help in decreasing tensile stress in GaN on (111) Si substrates. The second part of the researches follow the first part. We also prepared the samples with AlN buffer layers on (111) Si substrates to improve the quality of GaN thin film. Furthermore, the InGaN/GaN multiple quantum wells were deposited on high quality GaN thin films. The near-band edge emission energies and intensities of samples show blue shift and increase respectively with the increase of the numbers of AlN buffer layer. This is due to the reduction of piezoelectric fields as well as the quantum confined Stark effect in InGaN/GaN multiple quantum wells. Also, the shift of E2high and A1(LO) modes of GaN from micro-Raman spectra were observed. The tensile stress in GaN on (111) Si substrates was decreased effectively .
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4

Chen, Ji-Xian, and 陳季賢. "Growth and Characterization of AlInN/AlN/GaN Heterostructures on 6-inch Si Substrates." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/75689759994782567860.

Повний текст джерела
Анотація:
碩士
國立中央大學
電機工程學系
104
This study aims at growing high electron mobility and low channel resistance AlInN/GaN heterostructures on Si substrates by metal-organic chemical vapor deposition, and the investigation of carrier scattering mechanisms in these heterostructures. In order to reduce alloy scattering in AlInN/GaN high electron mobility transistors (HEMTs), a binary spacer layer, i.e. AlN, is inserted between AlInN and GaN so as to prevent electrons in GaN channel from spilling to AlInN barrier layer. By optimizing the growth conditions of AlInN HEMTs, surface roughness of 0.738 nm, electron mobility of 1,360 cm2/V-s with two dimensional electron gas (2DEG) concentration of 2.13×1013 cm-2, leading to a very low sheet resistance of 215 ohm/sq, have been achieved. A series of AlInN HEMTs with GaN cap layer thickness and Al content in AlInN barrier layer ranging from 0 to 13 nm and 82% to 89%, respectively, have also been prepared and characterized. Hall-effect measurements show that 2DEG concentration increases with decreasing GaN cap thickness and increasing Al content in AlInN barrier layer, while electron mobility decreases with increasing 2DEG density. It is also observed that the degradation of electron mobility is more significant for the samples with a rough interface than those with a smooth one. From temperature-dependent Hall-effect measurements, it is concluded that the electron mobility of AlInN HEMTs with high 2DEG density is dominated by interface roughness scattering at low temperature. Reducing interface roughness is an essential task to achieve high 2DEG concentration AlInN HEMTs.
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5

Mohan, Lokesh. "III- Nitride Thin Films and Nanostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4297.

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Анотація:
This thesis focuses on studying heterostructures of GaN, Silicon and AlN. GaN nanostructures are grown on bare Si (111) with and without a GaN buffer layer and GaN film was grown on an AlN layer. Apart from the material characterization of the grown samples we have studied the carrier transport across GaN/Si and AlN/Si heterojunctions by means of the I-V-T curves from these junctions and we also studied the band alignment across GaN/AlN and AlN/Si heterojunctions by means of X-ray photoelectron spectroscopy. The thesis is divided in 7 chapters. The first chapter deals with general introduction of the field, choice of the substrate, different growth techniques and an overview of nanostructures. In the second chapter different experimental techniques used in the current study are briefly mentioned. These techniques include Growth by Plasma Assisted Molecular Beam Epitaxy (PAMBE), X-Ray Diffraction (XRD), Raman spectroscopy, Photoluminescence spectroscopy, Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). Then in the 3rd chapter the growth and characterization of GaN nanostructures on Silicon (111) is discussed. Attention has been paid to the effect of substrate temperature and V-III ratio on the morphology and optical quality of the grown structures when other growth parameters has been kept constant. However due to the complexity involved in forming proper electrical contacts from such rods and low yield of single nanowire-based devices, the need to grow compact nanorods was felt. Hence in the fourth chapter compact GaN nanorods were grown on n-Si with a buffer layer for improved quality and elimination of any possibility of electrical short with the substrate during metallization. The main focus in this chapter is the electrical characterization of GaN nanorods/Si (111) heterojunction. The temperature dependent current-voltage characteristics from GaN/n-Si (111) junctions are analyzed and explained as the result of a lateral inhomogeneity in barrier heights with Gaussian distribution and temperature dependent Gaussian parameters. The importance of AlN as a buffer layer for many III-Nitride based devices and as an active layer in many electromechanical devices drew our attention towards band off-set studies of the GaN/AlN/Si heterojunction and electrical transport across the AlN/n-Si junction, in 5th and 6th chapter respectively. The 5th chapter starts with the structural and optical characterization of AlN/Si (111) templates and overgrown GaN thin film. The rest of the 5th chapter is dedicated to the band off sets studies on GaN/AlN and AlN/Si (111) heterojunctions with X-ray photoelectron spectroscopy (XPS). A band diagram of GaN/AlN and AlN/Si is suggested based on our studies. In the 6th chapter, which happens to be the last work chapter, the temperature dependent electrical characterization of AlN/n-Si (111) heterojunction was carried out from 100K to 400K and the transport mechanism was explained with the help of the trap states at the interface. Finally, the thesis is concluded and insights for future work is presented in the seventh chapter.
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6

Chandan, Greeshma K. "InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4237.

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Анотація:
The present research work focuses on the growth and characterization of group III-Nitride (InGaN) epitaxial layers as well as nanostructures on Si(111) substrates. The growth system used in this study was a plasma-assisted molecular beam epitaxy (PAMBE) system equipped with a radio frequency (RF) plasma source. Device quality GaN epilayers were obtained and InGaN/Si(111) heterojunctions were studied. In- GaN based multi-quantum well LED structure has been realized for green emission. Further catalyst free ultra fine GaN nanorods were grown using a two step method and further InGaN nanostructures were embedded in the as-grown nanorods. InGaN quantum dots were grown using droplet epitaxy and were characterized by Scanning Tunnelling Microscopy and Spectroscopy. It gives a brief introduction about III-nitride materials, growth, substrate selection, significance of III-Nitrides and Si integration and role of dimensionality. It deals with experimental techniques including the details of PAMBE system used in this work, substrate preparation, and detailed characterization of III-nitride epitaxial layers as well as nanostructures. It deals with the optimization of GaN epilayers on AlN/Si (111) templates. AlN underlayer was chosen to minimize the concentration of defects and also acts as an insulating layer which is crucial when it comes to integration of many other devices. The growth temperature was optimized under nitrogen rich growth regime and with the use of a thinner and better quality AlN underlayer and Si doping we could achieve device quality epilayers ( 1500 arc sec) for a thickness of 150 nm. The electron concentration and mobility were found to be -1.374 _1019cm􀀀3 (indicating n-type) and 72 cm2/V.s. Current-voltage measurements were carried out in temperature range of 77K-400K and the current conduction mechanisms at room temperature were identified. An in-depth analysis of temperature dependent current-voltage measurements reveal that the barrier height at the interface is not uniform and is found to have a double Gaussian distribution of barrier heights. It deals with the growth of InGaN epilayers on Si (111) with various substrate treatments. Actual indium composition was determined considering the bi-axial strain present in the epilayers. The effect of substrate treatment on epilayers evolution and quality are discussed. We could observe room temperature photoluminescence from the as-grown epilayers indicating that the epilayers are of good optical quality. InGaN/Si heterojunctions were studied for UV-detection applications. It was found that the heterojunction behaved as a self-powered device, i.e., the device showed a sharp rise in the photocurrent under UV illumination at zero bias. The rise and decay times were found to be 20ms and 33 ms respectively. The bandgap of grown InGaN epilayers were tuned for emission in Green wavelength range. (500nm-550nm) It discusses the sequential process involved in the unition of individual layers to successfully achieve a multi- quantum well structure. In the previous chapter, InGaN epilayers with emission in the green (500nm) region were obtained and having identified the growth conditions for green emission, InGaN epilayers were further grown on GaN/Si (111) and we could tune the bandgap to obtain the emission in blue region. The effect of InGaN growth on thickness was studied which finally led us to develop a growth sequence for successfully obtaining a multi quantum well structure. It deals the growth, structural and optical characterization of InGaN nanostructures embedded in GaN nanorods. The first part deals with the spontaneous growth of very fine (20nm diameter) GaN nanorods on Si (111). Low temperature photoluminescence spectroscopy (LTPL) was used to determine the optical properties of the GaN nanorods. The second part discusses the growth conditions for embedding InGaN in the earlier formed GaN nanorods. The effect of substrate temperature on the evolution of InGaN structures is assessed. Scanning Transmission Electron Microscopy along with Energy Dispersive Spectroscopy (STEM/EDS) is used to determine the elemental distributions in the as-grown nanostructures. LTPL was carried out to determine the emission characteristics of the InGaN/GaN nanostructures. We could successfully obtain room temperature emission in blue region from the core-shell nanorods which happens to be rare achievement. It deals with the growth of high indium content InGaN QDs by droplet epitaxy has been attempted for the first time. The experimental conditions behind InGa droplet formation have been discussed. The influence of droplet formation temperature on the transition from nanoscale structures to quantum dots has been discussed. Room temperature scanning tunnelling microscopy and spectroscopy measurements were carried out. It was found that the QDs exhibited compositional variations even at nanoscale from STM/STS studies. It gives the summary and conclusions of the present study and also discusses about future research directions in this area.
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7

Lu, Chia-Ming, and 呂嘉銘. "1.Defect analysis of GaN /AlN thin films on Si and LiAlO2 substrates2.Growth of Sapphire single crystal." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/08014785377088152258.

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Анотація:
碩士
國立中山大學
材料科學研究所
94
The main purpose of this study is focused on the defects within the layers of GaN over AlN thin films which were grown on the substrates of silicon (111) and LiAlO2 (100), respectively. The growth of three sapphire crystals is also addressed. During the epitaxial growth period, the Al pre-deposition time is very important for the defect on AlN/Si, and due to the high stacking fault energy, the partial dislocations in the AlN layers can not be observed. Cracks were found in the GaN films because of the great thermal mismatch between GaN itself and AlN which is up to 25%. Although the lattice mismatch between GaN and LiAlO2 is low, the thermal stress effect still could not be avoided. Cracks also occurred in the GaN films which were grown on LiAlO2 substrates. For the sapphire pulled along [100] direction, the crystal has fewer amounts of bubbles at the lower rotation rate. For the sapphire pulled along [001] direction, the crystal with 4.5 mm/hr pulling rate has cracks along [001] direction, but the crystal with 4.0 mm/hr pulling rate has no cracks inside.
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8

Chen, Chien-Hsun, and 陳建勳. "Characterizations of GaN/AlN multilayers on a mesh patterned Si(111) grown by metal-organic chemical vapor deposition." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/15521410380206659047.

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Анотація:
博士
國立清華大學
材料科學工程學系
94
A 300 x 300 micro-meter square crack-free GaN/AlN multilayers of 2 micrometer thick has been successfully grown on the Si(111) substrate patterned with SixNy or SiO2 meshes by MOCVD. The cathodoluminescence (CL) and Raman results show that the better quality of GaN is obtained for the SixNy mesh patterned Si(111) as the substrate. And better quality of GaN is achieved for smaller mesh size. The in-plane stress exhibits a U shape distribution across the “window” region, supported by the Raman shift of the GaN E2(TO) mode. This indicates a stress relaxation abruptly occurring near the edge of the “window” region due to the free standing surface (11-bar01) or (112-bar2). The in-plane stress is almost relaxed at the corner of the “window” region due to three free standing surfaces (11-bar01), (112-bar2), and (101-bar1). The maximum in-plane stress is located near the surface of the multilayers at the center of the “window” region, supported by the Raman measurements and the failure observations. The role of the SixNy mesh in the stress relaxation is discussed. The band gap shift in the 80 x 80 micrometer square crack-free GaN/AlN multilayers on the mesh patterned Si(111) was characterized by cathodoluminescence (CL) and Raman techniques. The GaN band gap derived from CL spectra depends on the spatial point inside a mesh, which changes from 3.413 eV (at center), to 3.418 eV (at edge), and to 3.426 eV (at corner). The band gap shift is attributed to the variation of tensile stress inside the mesh, confirmed by Raman mapping. The shift of GaN band gap per unit stress is determined to be 0.03 eV/GPa. Scanning photoelectron microscopy (SPEM) was applied to extract chemical images of the GaN/AlN multilayers within the mesh. The SPEM images study of the GaN/AlN multilayers on a mesh patterned Si(111) is dependent on the local charging. The V-defect on the surface of GaN can be observed by SPEM images and is determined to be Ga terminated surface.
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9

Chen, Yi-Heng, and 陳毅恆. "Investigation of the Parasitic RF Loss at the AlN/Si Interface for the GaN-based HEMT Structure on Silicon." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/u6tnc4.

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Анотація:
碩士
國立交通大學
國際半導體產業學院
107
Over the past few years, the high electron mobility transistors which were made of III-V compound semiconductors had been comprehensively applied in high-frequency and high-power area. Especially, gallium nitride (GaN) exhibits many outstanding material characteristics, for instance, high band gap, high saturated electron velocity, high electric breakdown voltage and so on, which make itself be the rising star in high-voltage and high-current electronic devices. The researches utilizing metal-organic chemical vapor deposition (MOCVD) to deposit the GaN-based epitaxy film on SiC and sapphire substrates have gradually mature. Moreover; considered the market demands and the cost, it inevitably used Si substrates for epitaxial growth. However; there is still parasitic RF loss issue, which needs to be resolved in order to enhance the RF performances of GaN-HEMT on Si substrate. In this research, we mainly investigate and discuss the mechanisms of RF loss at the interface between AlN nucleation and Si substrate for the GaN-based HEMT structure. We find that the RF losses are attributed to two mechanisms; the first parasitic conductive channel is the p-type conductive diffusion layer caused by the Al/Ga diffusing into Si substrate, and the second one is the n-type inversion channel resulted from the piezoelectric field which is generated by the residual stress in the tensile AlN layer grown on Si. The transmission line within coplanar waveguide (CPW) was measured to characterize the RF loss of the GaN-based HEMTs on Si and their buffer. The RF loss resulted from the atomic Al/Ga diffusion can be improved by simply reducing the amount of remaining by-product atom in the carrier of MOCVD. (For example: The diffusion effect can be minimized by baking the MOCVD chamber and the carrier at very high temperature in H2 ambient.) Therefore, the key of this study was development of the high-low-high temperature AlN nucleation (HLHT AlN) for the release of the residual stress and further minimized the impact of n-type inversion channel caused from piezoelectric field. However, the RF loss caused by the n-type inversion channel must be overcome by optimum design structure and epitaxial growth process to minimize the residual tensile stress in the AlN layer. In this work, the thinner AlN nucleation layer and a low-temperature AlN inserted in the middle of AlN nucleation layer are adopted to effectively reduce the residual tensile stress in the AlN layer and the consequent RF loss. As the results of using the thin HLH AlN nucleation, the RF loss of GaN-based HEMTs on Si can be reduced by 49%; breakdown voltage was enhanced by reducing the impact of inversion channel; Ft and Fmax were 57GHz and 90GHz without de-embedded and the minimum noise figure was 1.89dB at 38GHz application. Moreover, we found the optimized HLHT AlN nucleation significantly took effectiveness on RF loss of GaN-based HEMT grown on high-resistivity Si substrate. Based on this result, high-resistivity Si substrate would be upgraded the value of RF application.
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10

LAI, HO-CHINE, and 賴和謙. "(I) Investigation of surface plasmon resonance behaviors of GaxZn1-xO thin films and (II) influence of AlN buffer layers on GaN films and InGaN/GaN quantum wells grown on Si substrates." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/d9wng5.

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Анотація:
碩士
國立臺南大學
材料科學系碩士班
107
There are two parts of investigations in this thesis. The first part is the study of plasmonic resonance of characteristics of GaxZn1-xO thin films grown on sapphire substrate with molecular beam epitaxy (MBE). Three series of samples are prepared for the variations of Ga and Zn effusion cell temperature and substrate temperature. The results exhibit that electron concentration of GaxZn1-xO thin films can reach 1020~1021 cm-3. Preferential orientation along (002) of X-ray diffraction (XRD) pattern is demonstrated in GaxZn1-xO thin films. For the GaxZn1-xO thin film with the x content of Ga 6.26 % and substrate temperature 250 °C, it shows the strongest peak intensity of (002), high electron concentration 8.18×1020 cm-3, high electron mobility 30.1 cm2/Vs, low electron resistivity 2.54×10-4 Ω-cm, lower strain of the film, and better micro-photoluminescence (micro-PL) and crystalline structure. Besides Hall effect measurements, spectroscopic ellipsometry (SE) provides an nondestructive and contactless method to obtain electrical properties of semiconductor material with plasmonic behaviors. The second part of the researches is the influence of AlN buffer layers on GaN films and InGaN/GaN quantum wells grown on Si substrates. Graded decrease of growth temperature from 1000 to 700 oC in depositing multiple AlN buffer layers can effectively reduce the cracks of GaN and hence increase crystalline quality and PL intensity. Two-photon excitation microscopy could help in-depth analysis of formation of GaN thin films.
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Частини книг з теми "GaN/AlN/Si"

1

"Highly Reflective and Crack-free Si-doped AlN/GaN Distributed Bragg Reflectors Grown on 6H-SiC(0001) by Molecular Beam Epitaxy." In Compound Semiconductors 2004, 323–26. CRC Press, 2005. http://dx.doi.org/10.1201/9781482269222-74.

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Тези доповідей конференцій з теми "GaN/AlN/Si"

1

Hu, F. R., Y. J. Wang, H. B. Zhu, and Z. C. Liang. "InGaN/GaN light-emitting diode on GaN/Si template with AlN/GaN superlattice as interlayer." In Photonics Asia, edited by Xuping Zhang, Hai Ming, and Joel M. Therrien. SPIE, 2012. http://dx.doi.org/10.1117/12.2001126.

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2

Chen, P. G., Y. C. Chou, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, M. Tang, M. H. Liao, and M. H. Lee. "Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT." In 2018 7th International Symposium on Next Generation Electronics (ISNE). IEEE, 2018. http://dx.doi.org/10.1109/isne.2018.8394720.

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3

Bakri, A. S., N. Nafarizal, R. A. M. Ali, M. K. Ahmad, M. Z. Sahdan, A. S. Abu Bakar, N. A. Raship, and A. Aldalbahi. "Characterization of GAN/ALN on SI Using Conventional RF Magnetron Sputtering." In 2020 IEEE International Conference on Plasma Science (ICOPS). IEEE, 2020. http://dx.doi.org/10.1109/icops37625.2020.9717939.

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4

Dadgar, Armin, Florian Horich, Ralf Borgmann, Christopher Luttich, Jurgen Blasing, Gordon Schmidt, Peter Veit, Jurgen Christen, and Andre Strittmatter. "Sputter epitaxy of AlN and GaN on Si for device applications." In 2022 Compound Semiconductor Week (CSW). IEEE, 2022. http://dx.doi.org/10.1109/csw55288.2022.9930417.

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5

Yusoff, Mohd Zaki Mohd, Zainuriah Hassan, Azzafeerah Mahyuddin, Chin Che Woei, Anas Ahmad, Yushamdan Yusof, and Mohd Bukhari Md Yunus. "Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE." In 2011 IEEE Symposium on Business, Engineering and Industrial Applications (ISBEIA). IEEE, 2011. http://dx.doi.org/10.1109/isbeia.2011.6088879.

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6

Yates, Luke, Thomas L. Bougher, Thomas Beechem, Baratunde A. Cola, and Samuel Graham. "The Impact of Interfacial Layers on the Thermal Boundary Resistance and Residual Stress in GaN on Si Epitaxial Layers." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48259.

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The development of gallium nitride (GaN) on silicon (Si) substrates is a critical technology for potential low cost power electronics. These devices can accommodate faster switching speeds, hotter temperatures, and high voltages needed for power electronics applications. However, the lattice mismatch and difference in crystal structure between 111 Si and c-axis hexagonal GaN requires the use of buffer layers in order to grow device quality epitaxial layers. For lateral high electron mobility transistors, these interfacial layers act as a potential source of increased thermal boundary resistance (TBR) which impedes heat flow out of the GaN on Si devices. In addition, these interfacial layers impact the growth and residual stress in the GaN epitaxial layer which can play a role in device reliability. In this work we use optical methods to experimentally measure a relatively low TBR for GaN on Si with an intermediate buffer layer to be 3.8 ± 0.4 m2K/GW. The effective TBR of a material stack that encompasses GaN on Si with a superlattice (SL) buffer is also measured, and is found to be 107 ± 1 m2K/GW. In addition the residual state of strain in the GaN layer is measured for both samples, and is found to vary significantly between them. Thermal conductivity of a 0.8μm GaN layer on AlN buffer is determined to be 126 ± 25 W/m-K, while a 0.84 μm GaN layer with C-doping on a SL structure is determined to be 112 ± 29 W/m-K.
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Yusoff, Mohd Zaki Mohd, Azzafeerah Mahyuddin, Zainuriah Hassan, Haslan Abu Hassan, and Mat Johar Abdullah. "The investigation of Al[sub 0.29]Ga[sub 0.71]N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE." In 2ND ASEAN - APCTP WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY: (AMSN 2010). AIP, 2012. http://dx.doi.org/10.1063/1.4732500.

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8

Akasaka, Tetsuya, Yasuyuki Kobayashi, and Toshiki Makimoto. "GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers." In 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.i-2-5.

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9

Bakri, Anis Suhaili, Nafarizal Nayan, Ahmad Shuhaimi Abu Bakar, Zulkifli Azman, Nur Amaliyana Raship, Muliana Tahan, and Riyaz Ahmad Mohamed Ali. "Structural properties and surface roughness of heterostructure GaN/AlN on Si (100) substrate." In 2020 IEEE Student Conference on Research and Development (SCOReD). IEEE, 2020. http://dx.doi.org/10.1109/scored50371.2020.9250956.

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Koshiba, Shyun, Takeshi Kuraoka, Takeru Norikane, Yutaka Ogasawara, Fumi Ikemoto, Shun Kabuto, Kazuhiro Morishita, et al. "Polycrystalline GaN/AlN super-lattice on Si (001) substrate grown by RF-MBE." In 2020 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2020. http://dx.doi.org/10.7567/ssdm.2020.j-1-04.

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