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Статті в журналах з теми "GaN/AlN/Si"
Середин, П. В., К. А. Барков, Д. Л. Голощапов, А. С. Леньшин, Ю. Ю. Худяков, И. Н. Арсентьев, А. А. Лебедев та ін. "Влияние предобработки подложки кремния на свойства пленок GaN, выращенных методом хлорид-гидридной газофазной эпитаксии". Физика и техника полупроводников 55, № 8 (2021): 704. http://dx.doi.org/10.21883/ftp.2021.08.51144.9660.
Повний текст джерелаYang, Yibin, Lingxia Zhang, and Yu Zhao. "Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates." Crystals 10, no. 9 (September 1, 2020): 772. http://dx.doi.org/10.3390/cryst10090772.
Повний текст джерелаКукушкин, С. А., А. В. Осипов, В. Н. Бессолов, Е. В. Коненкова та В. Н. Пантелеев. "Остановка и разворот дислокаций несоответствия при росте нитрида галлия на подложках SiC/Si". Физика твердого тела 59, № 4 (2017): 660. http://dx.doi.org/10.21883/ftt.2017.04.44266.287.
Повний текст джерелаБессолов, В. Н., Е. В. Гущина, Е. В. Коненкова, С. Д. Коненков, Т. В. Львова, В. Н. Пантелеев та М. П. Щеглов. "Синтез гексагональных слоев AlN и GaN на Si(100)-подложке методом хлоридной газофазной эпитаксии". Журнал технической физики 89, № 4 (2019): 574. http://dx.doi.org/10.21883/jtf.2019.04.47315.152-18.
Повний текст джерелаGoswami, Ramasis, Syed Qadri, Neeraj Nepal, and Charles Eddy. "Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures." Coatings 11, no. 4 (April 20, 2021): 482. http://dx.doi.org/10.3390/coatings11040482.
Повний текст джерелаNikishin, Sergey A., Nikolai N. Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave de Peralta, George A. Seryogin, Mark Holtz, et al. "High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 467–73. http://dx.doi.org/10.1557/s1092578300004658.
Повний текст джерелаTajalli, Alaleh, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, et al. "Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment." Micromachines 11, no. 1 (January 17, 2020): 101. http://dx.doi.org/10.3390/mi11010101.
Повний текст джерелаFollstaedt, D. M., J. Han, P. Provencio, and J. G. Fleming. "Microstructure of GaN Grown on (111) Si by MOCVD." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 397–402. http://dx.doi.org/10.1557/s1092578300002787.
Повний текст джерелаVashishtha, Pargam, Pukhraj Prajapat, Lalit Goswami, Aditya Yadav, Akhilesh Pandey, and Govind Gupta. "Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector." Electronic Materials 3, no. 4 (December 9, 2022): 357–67. http://dx.doi.org/10.3390/electronicmat3040029.
Повний текст джерелаМизеров, А. М., С. А. Кукушкин, Ш. Ш. Шарофидинов, А. В. Осипов, С. Н. Тимошнев, К. Ю. Шубина, Т. Н. Березовская, Д. В. Мохов та А. Д. Буравлев. "Метод управления полярностью слоев GaN при эпитаксиальном синтезе GaN/AlN гетероструктур на гибридных подложках SiC/Si". Физика твердого тела 61, № 12 (2019): 2289. http://dx.doi.org/10.21883/ftt.2019.12.48535.06ks.
Повний текст джерелаДисертації з теми "GaN/AlN/Si"
Ive, Tommy. "Growth and investigation of AlN/GaN and (Al,In)N/GaN based Bragg reflectors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15395.
Повний текст джерелаWe study the synthesis of AlN/GaN and (Al,In)N/GaN Bragg reflectors. The structures were grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) substrates. In addition, we study the impact of Si-doping on the surface morphology and the structural and electrical properties of the AlN/GaN Bragg reflectors. Crack-free and high-reflectance (R>99%) Bragg reflectors were achieved with a stopband centered at 450 nm. The Si-doped structures exhibit ohmic I-V behavior in the entire measurement range. The specific series resistance is 2-4 mOhmcm2. The results of the (Al,In)N growth experiments are summarized in a phase diagram which clearly shows the optimum growth window for (Al,In)N.
Pu, Jun-Liang, and 蒲俊良. "Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/e394c2.
Повний текст джерела崑山科技大學
電機工程研究所
91
In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal organic chemical vapor phase deposition (MOCVD), X-ray diffraction (XRD), photoluminescence and AFM measurement. Then we do the systematic research on GaN under different growth condition. We analyze the GaN crystal quality affected by the growth flow of buffer layer. Finally, we can observe GaN crystal layer of surface level and smooth by AFM and high multiple optics microscope measurement. We study the film GaN crystal quality by X-ray diffraction (XRD) measurement and the shift of the PL spectra under different excitation light intensity.
Su, Wei-shiang, and 蘇暐翔. "Studies of GaN thin films and InGaN/GaN quantum wells on Si substrates with AlN buffer layers." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/80232853635099693506.
Повний текст джерела國立臺南大學
材料科學系碩士班
100
We use micro-Raman spectra, scanning electron microscope, atomic force microscope, and photoluminescence spectra to study the properties of III-V nitride semiconductor materials grown on (111) Si substrates with different growth conditions of AlN buffer layers. The studies are divided into two parts. The first part is the growth of multiple AlN buffer layers with the decrease of growth temperature from 1000 to 700 oC. For the increase of the numbers of AlN buffer layer, it shows the blue shift of near band edge light emission energy and intensity, high energy shift of E2high and A1(LO) scattering modes of GaN from micro-Raman spectra, pronounced decrease of cracks density in scanning electron microscope images, and the reduced surface roughness in atomic force microscope images. These results indicate that such growth conditions of AlN buffer layers can help in decreasing tensile stress in GaN on (111) Si substrates. The second part of the researches follow the first part. We also prepared the samples with AlN buffer layers on (111) Si substrates to improve the quality of GaN thin film. Furthermore, the InGaN/GaN multiple quantum wells were deposited on high quality GaN thin films. The near-band edge emission energies and intensities of samples show blue shift and increase respectively with the increase of the numbers of AlN buffer layer. This is due to the reduction of piezoelectric fields as well as the quantum confined Stark effect in InGaN/GaN multiple quantum wells. Also, the shift of E2high and A1(LO) modes of GaN from micro-Raman spectra were observed. The tensile stress in GaN on (111) Si substrates was decreased effectively .
Chen, Ji-Xian, and 陳季賢. "Growth and Characterization of AlInN/AlN/GaN Heterostructures on 6-inch Si Substrates." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/75689759994782567860.
Повний текст джерела國立中央大學
電機工程學系
104
This study aims at growing high electron mobility and low channel resistance AlInN/GaN heterostructures on Si substrates by metal-organic chemical vapor deposition, and the investigation of carrier scattering mechanisms in these heterostructures. In order to reduce alloy scattering in AlInN/GaN high electron mobility transistors (HEMTs), a binary spacer layer, i.e. AlN, is inserted between AlInN and GaN so as to prevent electrons in GaN channel from spilling to AlInN barrier layer. By optimizing the growth conditions of AlInN HEMTs, surface roughness of 0.738 nm, electron mobility of 1,360 cm2/V-s with two dimensional electron gas (2DEG) concentration of 2.13×1013 cm-2, leading to a very low sheet resistance of 215 ohm/sq, have been achieved. A series of AlInN HEMTs with GaN cap layer thickness and Al content in AlInN barrier layer ranging from 0 to 13 nm and 82% to 89%, respectively, have also been prepared and characterized. Hall-effect measurements show that 2DEG concentration increases with decreasing GaN cap thickness and increasing Al content in AlInN barrier layer, while electron mobility decreases with increasing 2DEG density. It is also observed that the degradation of electron mobility is more significant for the samples with a rough interface than those with a smooth one. From temperature-dependent Hall-effect measurements, it is concluded that the electron mobility of AlInN HEMTs with high 2DEG density is dominated by interface roughness scattering at low temperature. Reducing interface roughness is an essential task to achieve high 2DEG concentration AlInN HEMTs.
Mohan, Lokesh. "III- Nitride Thin Films and Nanostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4297.
Повний текст джерелаChandan, Greeshma K. "InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4237.
Повний текст джерелаLu, Chia-Ming, and 呂嘉銘. "1.Defect analysis of GaN /AlN thin films on Si and LiAlO2 substrates2.Growth of Sapphire single crystal." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/08014785377088152258.
Повний текст джерела國立中山大學
材料科學研究所
94
The main purpose of this study is focused on the defects within the layers of GaN over AlN thin films which were grown on the substrates of silicon (111) and LiAlO2 (100), respectively. The growth of three sapphire crystals is also addressed. During the epitaxial growth period, the Al pre-deposition time is very important for the defect on AlN/Si, and due to the high stacking fault energy, the partial dislocations in the AlN layers can not be observed. Cracks were found in the GaN films because of the great thermal mismatch between GaN itself and AlN which is up to 25%. Although the lattice mismatch between GaN and LiAlO2 is low, the thermal stress effect still could not be avoided. Cracks also occurred in the GaN films which were grown on LiAlO2 substrates. For the sapphire pulled along [100] direction, the crystal has fewer amounts of bubbles at the lower rotation rate. For the sapphire pulled along [001] direction, the crystal with 4.5 mm/hr pulling rate has cracks along [001] direction, but the crystal with 4.0 mm/hr pulling rate has no cracks inside.
Chen, Chien-Hsun, and 陳建勳. "Characterizations of GaN/AlN multilayers on a mesh patterned Si(111) grown by metal-organic chemical vapor deposition." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/15521410380206659047.
Повний текст джерела國立清華大學
材料科學工程學系
94
A 300 x 300 micro-meter square crack-free GaN/AlN multilayers of 2 micrometer thick has been successfully grown on the Si(111) substrate patterned with SixNy or SiO2 meshes by MOCVD. The cathodoluminescence (CL) and Raman results show that the better quality of GaN is obtained for the SixNy mesh patterned Si(111) as the substrate. And better quality of GaN is achieved for smaller mesh size. The in-plane stress exhibits a U shape distribution across the “window” region, supported by the Raman shift of the GaN E2(TO) mode. This indicates a stress relaxation abruptly occurring near the edge of the “window” region due to the free standing surface (11-bar01) or (112-bar2). The in-plane stress is almost relaxed at the corner of the “window” region due to three free standing surfaces (11-bar01), (112-bar2), and (101-bar1). The maximum in-plane stress is located near the surface of the multilayers at the center of the “window” region, supported by the Raman measurements and the failure observations. The role of the SixNy mesh in the stress relaxation is discussed. The band gap shift in the 80 x 80 micrometer square crack-free GaN/AlN multilayers on the mesh patterned Si(111) was characterized by cathodoluminescence (CL) and Raman techniques. The GaN band gap derived from CL spectra depends on the spatial point inside a mesh, which changes from 3.413 eV (at center), to 3.418 eV (at edge), and to 3.426 eV (at corner). The band gap shift is attributed to the variation of tensile stress inside the mesh, confirmed by Raman mapping. The shift of GaN band gap per unit stress is determined to be 0.03 eV/GPa. Scanning photoelectron microscopy (SPEM) was applied to extract chemical images of the GaN/AlN multilayers within the mesh. The SPEM images study of the GaN/AlN multilayers on a mesh patterned Si(111) is dependent on the local charging. The V-defect on the surface of GaN can be observed by SPEM images and is determined to be Ga terminated surface.
Chen, Yi-Heng, and 陳毅恆. "Investigation of the Parasitic RF Loss at the AlN/Si Interface for the GaN-based HEMT Structure on Silicon." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/u6tnc4.
Повний текст джерела國立交通大學
國際半導體產業學院
107
Over the past few years, the high electron mobility transistors which were made of III-V compound semiconductors had been comprehensively applied in high-frequency and high-power area. Especially, gallium nitride (GaN) exhibits many outstanding material characteristics, for instance, high band gap, high saturated electron velocity, high electric breakdown voltage and so on, which make itself be the rising star in high-voltage and high-current electronic devices. The researches utilizing metal-organic chemical vapor deposition (MOCVD) to deposit the GaN-based epitaxy film on SiC and sapphire substrates have gradually mature. Moreover; considered the market demands and the cost, it inevitably used Si substrates for epitaxial growth. However; there is still parasitic RF loss issue, which needs to be resolved in order to enhance the RF performances of GaN-HEMT on Si substrate. In this research, we mainly investigate and discuss the mechanisms of RF loss at the interface between AlN nucleation and Si substrate for the GaN-based HEMT structure. We find that the RF losses are attributed to two mechanisms; the first parasitic conductive channel is the p-type conductive diffusion layer caused by the Al/Ga diffusing into Si substrate, and the second one is the n-type inversion channel resulted from the piezoelectric field which is generated by the residual stress in the tensile AlN layer grown on Si. The transmission line within coplanar waveguide (CPW) was measured to characterize the RF loss of the GaN-based HEMTs on Si and their buffer. The RF loss resulted from the atomic Al/Ga diffusion can be improved by simply reducing the amount of remaining by-product atom in the carrier of MOCVD. (For example: The diffusion effect can be minimized by baking the MOCVD chamber and the carrier at very high temperature in H2 ambient.) Therefore, the key of this study was development of the high-low-high temperature AlN nucleation (HLHT AlN) for the release of the residual stress and further minimized the impact of n-type inversion channel caused from piezoelectric field. However, the RF loss caused by the n-type inversion channel must be overcome by optimum design structure and epitaxial growth process to minimize the residual tensile stress in the AlN layer. In this work, the thinner AlN nucleation layer and a low-temperature AlN inserted in the middle of AlN nucleation layer are adopted to effectively reduce the residual tensile stress in the AlN layer and the consequent RF loss. As the results of using the thin HLH AlN nucleation, the RF loss of GaN-based HEMTs on Si can be reduced by 49%; breakdown voltage was enhanced by reducing the impact of inversion channel; Ft and Fmax were 57GHz and 90GHz without de-embedded and the minimum noise figure was 1.89dB at 38GHz application. Moreover, we found the optimized HLHT AlN nucleation significantly took effectiveness on RF loss of GaN-based HEMT grown on high-resistivity Si substrate. Based on this result, high-resistivity Si substrate would be upgraded the value of RF application.
LAI, HO-CHINE, and 賴和謙. "(I) Investigation of surface plasmon resonance behaviors of GaxZn1-xO thin films and (II) influence of AlN buffer layers on GaN films and InGaN/GaN quantum wells grown on Si substrates." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/d9wng5.
Повний текст джерела國立臺南大學
材料科學系碩士班
107
There are two parts of investigations in this thesis. The first part is the study of plasmonic resonance of characteristics of GaxZn1-xO thin films grown on sapphire substrate with molecular beam epitaxy (MBE). Three series of samples are prepared for the variations of Ga and Zn effusion cell temperature and substrate temperature. The results exhibit that electron concentration of GaxZn1-xO thin films can reach 1020~1021 cm-3. Preferential orientation along (002) of X-ray diffraction (XRD) pattern is demonstrated in GaxZn1-xO thin films. For the GaxZn1-xO thin film with the x content of Ga 6.26 % and substrate temperature 250 °C, it shows the strongest peak intensity of (002), high electron concentration 8.18×1020 cm-3, high electron mobility 30.1 cm2/Vs, low electron resistivity 2.54×10-4 Ω-cm, lower strain of the film, and better micro-photoluminescence (micro-PL) and crystalline structure. Besides Hall effect measurements, spectroscopic ellipsometry (SE) provides an nondestructive and contactless method to obtain electrical properties of semiconductor material with plasmonic behaviors. The second part of the researches is the influence of AlN buffer layers on GaN films and InGaN/GaN quantum wells grown on Si substrates. Graded decrease of growth temperature from 1000 to 700 oC in depositing multiple AlN buffer layers can effectively reduce the cracks of GaN and hence increase crystalline quality and PL intensity. Two-photon excitation microscopy could help in-depth analysis of formation of GaN thin films.
Частини книг з теми "GaN/AlN/Si"
"Highly Reflective and Crack-free Si-doped AlN/GaN Distributed Bragg Reflectors Grown on 6H-SiC(0001) by Molecular Beam Epitaxy." In Compound Semiconductors 2004, 323–26. CRC Press, 2005. http://dx.doi.org/10.1201/9781482269222-74.
Повний текст джерелаТези доповідей конференцій з теми "GaN/AlN/Si"
Hu, F. R., Y. J. Wang, H. B. Zhu, and Z. C. Liang. "InGaN/GaN light-emitting diode on GaN/Si template with AlN/GaN superlattice as interlayer." In Photonics Asia, edited by Xuping Zhang, Hai Ming, and Joel M. Therrien. SPIE, 2012. http://dx.doi.org/10.1117/12.2001126.
Повний текст джерелаChen, P. G., Y. C. Chou, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, M. Tang, M. H. Liao, and M. H. Lee. "Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT." In 2018 7th International Symposium on Next Generation Electronics (ISNE). IEEE, 2018. http://dx.doi.org/10.1109/isne.2018.8394720.
Повний текст джерелаBakri, A. S., N. Nafarizal, R. A. M. Ali, M. K. Ahmad, M. Z. Sahdan, A. S. Abu Bakar, N. A. Raship, and A. Aldalbahi. "Characterization of GAN/ALN on SI Using Conventional RF Magnetron Sputtering." In 2020 IEEE International Conference on Plasma Science (ICOPS). IEEE, 2020. http://dx.doi.org/10.1109/icops37625.2020.9717939.
Повний текст джерелаDadgar, Armin, Florian Horich, Ralf Borgmann, Christopher Luttich, Jurgen Blasing, Gordon Schmidt, Peter Veit, Jurgen Christen, and Andre Strittmatter. "Sputter epitaxy of AlN and GaN on Si for device applications." In 2022 Compound Semiconductor Week (CSW). IEEE, 2022. http://dx.doi.org/10.1109/csw55288.2022.9930417.
Повний текст джерелаYusoff, Mohd Zaki Mohd, Zainuriah Hassan, Azzafeerah Mahyuddin, Chin Che Woei, Anas Ahmad, Yushamdan Yusof, and Mohd Bukhari Md Yunus. "Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE." In 2011 IEEE Symposium on Business, Engineering and Industrial Applications (ISBEIA). IEEE, 2011. http://dx.doi.org/10.1109/isbeia.2011.6088879.
Повний текст джерелаYates, Luke, Thomas L. Bougher, Thomas Beechem, Baratunde A. Cola, and Samuel Graham. "The Impact of Interfacial Layers on the Thermal Boundary Resistance and Residual Stress in GaN on Si Epitaxial Layers." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48259.
Повний текст джерелаYusoff, Mohd Zaki Mohd, Azzafeerah Mahyuddin, Zainuriah Hassan, Haslan Abu Hassan, and Mat Johar Abdullah. "The investigation of Al[sub 0.29]Ga[sub 0.71]N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE." In 2ND ASEAN - APCTP WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY: (AMSN 2010). AIP, 2012. http://dx.doi.org/10.1063/1.4732500.
Повний текст джерелаAkasaka, Tetsuya, Yasuyuki Kobayashi, and Toshiki Makimoto. "GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers." In 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.i-2-5.
Повний текст джерелаBakri, Anis Suhaili, Nafarizal Nayan, Ahmad Shuhaimi Abu Bakar, Zulkifli Azman, Nur Amaliyana Raship, Muliana Tahan, and Riyaz Ahmad Mohamed Ali. "Structural properties and surface roughness of heterostructure GaN/AlN on Si (100) substrate." In 2020 IEEE Student Conference on Research and Development (SCOReD). IEEE, 2020. http://dx.doi.org/10.1109/scored50371.2020.9250956.
Повний текст джерелаKoshiba, Shyun, Takeshi Kuraoka, Takeru Norikane, Yutaka Ogasawara, Fumi Ikemoto, Shun Kabuto, Kazuhiro Morishita, et al. "Polycrystalline GaN/AlN super-lattice on Si (001) substrate grown by RF-MBE." In 2020 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2020. http://dx.doi.org/10.7567/ssdm.2020.j-1-04.
Повний текст джерела