Статті в журналах з теми "Gallium nitride"
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Sarkar, Sujoy, and S. Sampath. "Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control." Chemical Communications 52, no. 38 (2016): 6407–10. http://dx.doi.org/10.1039/c6cc02487d.
Dobrynin, A. V., M. M. Sletov, and V. V. Smirnov. "Luminescent properties of gallium nitride and gallium-aluminum nitride." Journal of Applied Spectroscopy 55, no. 5 (November 1991): 1169–71. http://dx.doi.org/10.1007/bf00658419.
Rajan, Siddharth, and Debdeep Jena. "Gallium nitride electronics." Semiconductor Science and Technology 28, no. 7 (June 21, 2013): 070301. http://dx.doi.org/10.1088/0268-1242/28/7/070301.
Al-Zuhairi, Omar, Ahmad Shuhaimi, Nafarizal Nayan, Adreen Azman, Anas Kamarudzaman, Omar Alobaidi, Mustafa Ghanim, Estabraq T. Abdullah, and Yong Zhu. "Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review." Coatings 12, no. 2 (February 18, 2022): 275. http://dx.doi.org/10.3390/coatings12020275.
Kochuev, D. A., A. S. Chernikov, R. V. Chkalov, A. V. Prokhorov, and K. S. Khorkov. "Deposition of GaN nanoparticles on the surface of a copper film under the action of electrostatic field during the femtosecond laser ablation synthesis in ammonia environment." Journal of Physics: Conference Series 2131, no. 5 (December 1, 2021): 052089. http://dx.doi.org/10.1088/1742-6596/2131/5/052089.
Mendes, Marco, Jeffrey Sercel, Mathew Hannon, Cristian Porneala, Xiangyang Song, Jie Fu, and Rouzbeh Sarrafi. "Advanced Laser Scribing for Emerging LED Materials." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (January 1, 2011): 001443–71. http://dx.doi.org/10.4071/2011dpc-wa32.
McLaurin, M., B. Haskell, S. Nakamura, and J. S. Speck. "Gallium adsorption onto (112̄0) gallium nitride surfaces." Journal of Applied Physics 96, no. 1 (July 2004): 327–34. http://dx.doi.org/10.1063/1.1759086.
Assali, Lucy V. C., W. V. M. Machado, and João F. Justo. "Manganese Impurity in Boron Nitride and Gallium Nitride." Materials Science Forum 483-485 (May 2005): 1047–50. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.1047.
Koratkar, Nikhil A. "Two-dimensional gallium nitride." Nature Materials 15, no. 11 (August 29, 2016): 1153–54. http://dx.doi.org/10.1038/nmat4740.
Seo, Hee Won, Seung Yong Bae, Jeunghee Park, Hyunik Yang, Kwang Soo Park, and Sangsig Kim. "Strained gallium nitride nanowires." Journal of Chemical Physics 116, no. 21 (June 2002): 9492–99. http://dx.doi.org/10.1063/1.1475748.
Guy, I. L., S. Muensit, and E. M. Goldys. "Electrostriction in gallium nitride." Applied Physics Letters 75, no. 23 (December 6, 1999): 3641–43. http://dx.doi.org/10.1063/1.125414.
Huang, Yu, Xiangfeng Duan, Yi Cui, and Charles M. Lieber. "Gallium Nitride Nanowire Nanodevices." Nano Letters 2, no. 2 (February 2002): 101–4. http://dx.doi.org/10.1021/nl015667d.
Ainbund, M. R., E. G. Vil’kin, A. V. Pashuk, A. S. Petrov, and I. N. Surikov. "Photoemission from gallium nitride." Technical Physics Letters 30, no. 6 (June 2004): 451. http://dx.doi.org/10.1134/1.1773331.
Orlov, V. V., and G. I. Zebrev. "Gallium Nitride FET Model." IOP Conference Series: Materials Science and Engineering 475 (February 18, 2019): 012007. http://dx.doi.org/10.1088/1757-899x/475/1/012007.
Bae, Seung Yong, Hee Won Seo, Jeunghee Park, Hyunik Yang, Hyunsuk Kim, and Sangsig Kim. "Triangular gallium nitride nanorods." Applied Physics Letters 82, no. 25 (June 23, 2003): 4564–66. http://dx.doi.org/10.1063/1.1583873.
Xing, H., S. Keller, Y.-F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, et al. "Gallium nitride based transistors." Journal of Physics: Condensed Matter 13, no. 32 (July 26, 2001): 7139–57. http://dx.doi.org/10.1088/0953-8984/13/32/317.
Kang, Liping, Lingli Wang, Haiyan Wang, Xiaodong Zhang, and Yongqiang Wang. "Preparation and Performance of Gallium Nitride Powders with Preferred Orientation." MATEC Web of Conferences 142 (2018): 01009. http://dx.doi.org/10.1051/matecconf/201814201009.
Volcheck, V. S., M. S. Baranava, and V. R. Stempitsky. "Thermal conductivity of wurtzite gallium nitride." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 67, no. 3 (October 8, 2022): 285–97. http://dx.doi.org/10.29235/1561-8358-2022-67-3-285-297.
Grabianska, Karolina, Robert Kucharski, Tomasz Sochacki, Jan L. Weyher, Malgorzata Iwinska, Izabella Grzegory, and Michal Bockowski. "On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals." Crystals 12, no. 4 (April 15, 2022): 554. http://dx.doi.org/10.3390/cryst12040554.
Akinlami, J. O. "Reflection coefficient and optical conductivity of gallium nitride GaN." Semiconductor Physics Quantum Electronics and Optoelectronics 15, no. 3 (September 25, 2012): 281–84. http://dx.doi.org/10.15407/spqeo15.03.281.
Gramatikov, Pavlin. "GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION." Journal Scientific and Applied Research 15, no. 1 (March 3, 2019): 11–21. http://dx.doi.org/10.46687/jsar.v15i1.250.
Yuanlong, Chen. "The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)." E3S Web of Conferences 198 (2020): 01025. http://dx.doi.org/10.1051/e3sconf/202019801025.
Stoddard, Nathan, and Siddha Pimputkar. "Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices." Crystals 13, no. 7 (June 23, 2023): 1004. http://dx.doi.org/10.3390/cryst13071004.
Yan, Han, and Pei Wang. "Adsorption and Diffusion of Aluminum, Gallium and Indium Atoms on Semi-Polar Gallium Nitride Substrate Surface: A First Principle Simulation." Advanced Materials Research 1015 (August 2014): 598–601. http://dx.doi.org/10.4028/www.scientific.net/amr.1015.598.
Yang, Yannan, Rong Fan, Penghao Zhang, Luyu Wang, Maolin Pan, Qiang Wang, Xinling Xie, et al. "In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication." Micromachines 14, no. 7 (June 21, 2023): 1278. http://dx.doi.org/10.3390/mi14071278.
Новикова, Н. Н., В. А. Яковлев, С. А. Климин, Т. В. Малин, А. М. Гилинский та К. С. Журавлев. "Поверхностные поляритоны в пленках нитридов алюминия и галлия, легированных кремнием". Журнал технической физики 127, № 7 (2019): 42. http://dx.doi.org/10.21883/os.2019.07.47929.84-19.
Zhou, Xiang, Ming-Yen Lu, Yu-Jung Lu, Eric J. Jones, Shangjr Gwo, and Silvija Gradečak. "Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-in-Rod Heterostructures." ACS Nano 9, no. 3 (February 12, 2015): 2868–75. http://dx.doi.org/10.1021/nn506867b.
Ezubchenko I. S., Chernykh M. Y., Chernykh I. A., Andreev A. A., Mayboroda I. O., Kolobkova E. M., Khrapovitskaya Yu. V., Grishchenko J. V., Perminov P. A., and Zanaveskin M. L. "Heat sink efficiency investigation of silicon-on-diamond composite substrates for gallium nitride-based devices." Technical Physics Letters 48, no. 4 (2022): 19. http://dx.doi.org/10.21883/tpl.2022.04.53163.19111.
Lueng, C. M., H. L. W. Chan, C. Surya, and C. L. Choy. "Piezoelectric coefficient of aluminum nitride and gallium nitride." Journal of Applied Physics 88, no. 9 (November 2000): 5360–63. http://dx.doi.org/10.1063/1.1317244.
Alliata, D., N. Anderson, M. Durand de Gevigney, I. Bergoend, and P. Gastaldo. "How to secure the fabrication of Gallium Nitride on Si wafers." International Symposium on Microelectronics 2019, no. 1 (October 1, 2019): 000444–49. http://dx.doi.org/10.4071/2380-4505-2019.1.000444.
Kochuev D. A., Chernikov A. S., Abramov D. V., Voznesenskaya A. A., Chkalov R. V., and Khorkov K. S. "Processes of ablation and structures growth under the action of femtosecond laser pulses on the gallium surface in an ammonia medium." Technical Physics 68, no. 4 (2023): 441. http://dx.doi.org/10.21883/tp.2023.04.55934.4-23.
Кириленко, Д. А., А. В. Мясоедов, А. Е. Калмыков та Л. М. Сорокин. "Влияние морфологии буферного слоя AlN на структурное качество полуполярного слоя GaN, выращенного на подложке Si(001), по данным просвечивающей электронной микроскопии". Письма в журнал технической физики 48, № 5 (2022): 51. http://dx.doi.org/10.21883/pjtf.2022.05.52159.18932.
KIYONO, Hajime, Yasuyuki MATSUO, Takuto MISE, Kohei KOBAYASHI та Hanan ALHUSSAIN. "Synthesis of gallium nitride nano-particles by ammonia nitridation of mixed β-gallium oxide and gallium nitride powders". Journal of the Ceramic Society of Japan 128, № 10 (1 жовтня 2020): 665–69. http://dx.doi.org/10.2109/jcersj2.20073.
Chen, Sheng. "Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors." Highlights in Science, Engineering and Technology 81 (January 26, 2024): 286–90. http://dx.doi.org/10.54097/26qm0041.
Il'kov, V. K., A. O. Mikhalev, and M. V. Maytama. "Arsenide and Nitride Gallium Switches." Nano- i Mikrosistemnaya Tehnika 20, no. 7 (July 30, 2018): 425–33. http://dx.doi.org/10.17587/nmst.20.425-433.
Wetzel, C., W. Walukiewicz, Eugene E. Haller, J. W. Ager, A. Chen, S. Fischer, P. Y. Yu, et al. "Carrier Localization in Gallium Nitride." Materials Science Forum 196-201 (November 1995): 31–36. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.31.
Alwadai, Norah, Nigza Saleman, Zainab Mufarreh Elqahtani, Salah Ud-Din Khan, and Abdul Majid. "Photonics with Gallium Nitride Nanowires." Materials 15, no. 13 (June 24, 2022): 4449. http://dx.doi.org/10.3390/ma15134449.
Lu, Min, Guo Wang, and Chang Sheng Yao. "Gallium Nitride for Nuclear Batteries." Advanced Materials Research 343-344 (September 2011): 56–61. http://dx.doi.org/10.4028/www.scientific.net/amr.343-344.56.
Zheng, Yanzhen, Changzheng Sun, Bing Xiong, Lai Wang, Zhibiao Hao, Jian Wang, Yanjun Han, Hongtao Li, Jiadong Yu, and Yi Luo. "Integrated Gallium Nitride Nonlinear Photonics." Laser & Photonics Reviews 16, no. 1 (December 11, 2021): 2100071. http://dx.doi.org/10.1002/lpor.202100071.
Foresi, J. S., and T. D. Moustakas. "Metal contacts to gallium nitride." Applied Physics Letters 62, no. 22 (May 31, 1993): 2859–61. http://dx.doi.org/10.1063/1.109207.
Brandt, M. S., N. M. Johnson, R. J. Molnar, R. Singh, and T. D. Moustakas. "Hydrogenation ofp‐type gallium nitride." Applied Physics Letters 64, no. 17 (April 25, 1994): 2264–66. http://dx.doi.org/10.1063/1.111639.
Muensit, Supasarote, and I. L. Guy. "Electromechanical effects in gallium nitride." Ferroelectrics 262, no. 1 (January 2001): 195–200. http://dx.doi.org/10.1080/00150190108225149.
Bae, Seung Yong, Hee Won Seo, Jeunghee Park, Hyunik Yang, Ju Chul Park, and Soun Young Lee. "Single-crystalline gallium nitride nanobelts." Applied Physics Letters 81, no. 1 (July 2002): 126–28. http://dx.doi.org/10.1063/1.1490395.
Pankove, J. I., J. T. Torvik, C. H. Qiu, I. Grzegory, S. Porowski, P. Quigley, and B. Martin. "Molecular doping of gallium nitride." Applied Physics Letters 74, no. 3 (January 18, 1999): 416–18. http://dx.doi.org/10.1063/1.123046.
Johnson, Justin C., Heon-Jin Choi, Kelly P. Knutsen, Richard D. Schaller, Peidong Yang, and Richard J. Saykally. "Single gallium nitride nanowire lasers." Nature Materials 1, no. 2 (September 15, 2002): 106–10. http://dx.doi.org/10.1038/nmat728.
Goldberger, Joshua, Rongrui He, Yanfeng Zhang, Sangkwon Lee, Haoquan Yan, Heon-Jin Choi, and Peidong Yang. "Single-crystal gallium nitride nanotubes." Nature 422, no. 6932 (April 2003): 599–602. http://dx.doi.org/10.1038/nature01551.
Leszczynski, M., H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, et al. "Lattice parameters of gallium nitride." Applied Physics Letters 69, no. 1 (July 1996): 73–75. http://dx.doi.org/10.1063/1.118123.
Schwarz, R. B., K. Khachaturyan, and E. R. Weber. "Elastic moduli of gallium nitride." Applied Physics Letters 70, no. 9 (March 3, 1997): 1122–24. http://dx.doi.org/10.1063/1.118503.
Ram Yadav, R., and D. Kumar Pandey. "Ultrasonic characterisation of gallium nitride." Materials Research Innovations 10, no. 4 (December 2006): 402–7. http://dx.doi.org/10.1179/143307507x199371.
Stevenson, Richard. "The world's best gallium nitride." IEEE Spectrum 47, no. 7 (July 2010): 40–45. http://dx.doi.org/10.1109/mspec.2010.5491014.